JPS60119571A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPS60119571A JPS60119571A JP22678783A JP22678783A JPS60119571A JP S60119571 A JPS60119571 A JP S60119571A JP 22678783 A JP22678783 A JP 22678783A JP 22678783 A JP22678783 A JP 22678783A JP S60119571 A JPS60119571 A JP S60119571A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoconductive layer
- photoconductive
- intermediate layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/12—Recording members for multicolour processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は2色電子写真感光体さらに詳しくは導電性基体
表面をNi−B非品質または合金薄膜で被覆した電子写
真感光体に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a two-color electrophotographic photoreceptor, and more particularly to an electrophotographic photoreceptor having a conductive substrate surface coated with a Ni-B non-quality or alloy thin film.
従来、導電性基体と光導電層との間に中間層を設けて基
体側からキャリヤの移動を容易に行なわしめることが知
られている。この種の中間層のうち、特に光導電層との
仕事関数との関係に着目した中間層としてIJi−P合
金を用いてキャリヤの注入性を改善する方法が提案され
ている《特公昭51−35864号公報参照》。しかし
ながらNi−P合金を中間層として)l基質上に設けそ
の上にAS2Se3からなる光導電層を設けた感光体の
負帯電特性は一200v以下であってホ−ルの注入が充
分とはいえない。また、仕事関数が感光層物質以下でN
1以上の金属、Te以上のカルコゲン物質、A8以上の
粉末および結着樹脂からガる中間層を用いることが提案
されている(特公昭54−36859号公報参照)。し
かしながら、この方法では結着樹脂を使用するためAs
2Se3などの光導電層では形成条件が制約され満足す
べき電気特性が得られないという欠点がある。Conventionally, it has been known to provide an intermediate layer between a conductive substrate and a photoconductive layer to facilitate the movement of carriers from the substrate side. Among these types of intermediate layers, a method has been proposed to improve the carrier injection property by using an IJi-P alloy as an intermediate layer, paying particular attention to the relationship between the work function and the photoconductive layer. See Publication No. 35864》. However, the negative charging characteristic of a photoreceptor with a Ni-P alloy as an intermediate layer on a substrate and a photoconductive layer made of AS2Se3 on top of it is less than -200V, and hole injection is sufficient. do not have. Also, if the work function is less than the photosensitive layer material, N
It has been proposed to use an intermediate layer made of one or more metals, a chalcogen substance of Te or more, a powder of A8 or more, and a binder resin (see Japanese Patent Publication No. 54-36859). However, since this method uses a binder resin, As
A photoconductive layer made of 2Se3 or the like has a disadvantage in that the formation conditions are restricted and satisfactory electrical properties cannot be obtained.
本発明は上記現状に鑑みてなされたものであって、その
目的は電子写真感光体の基体および光導電層間の整流特
性を改善することである。The present invention has been made in view of the above-mentioned current situation, and its purpose is to improve the rectification characteristics between the substrate and the photoconductive layer of an electrophotographic photoreceptor.
上記目的を達成するために、本発明は電子写真感光体に
おける中間層としてN1−B非晶質薄膜またはN1−B
合金薄膜を用いることにある。In order to achieve the above object, the present invention provides an N1-B amorphous thin film or a N1-B amorphous thin film as an intermediate layer in an electrophotographic photoreceptor.
The purpose is to use an alloy thin film.
本発明の電子写真感光体はN1−B非晶質薄膜またはN
1−B合金薄膜を被覆した導電性基体表面に光導電層を
設けたものを基本とする。また、本発明の電子写真感光
体の別の態様として、光導電層を第1光導電層と第2光
導電層との2層構成にすることができる。第1光導電層
はN1−B非晶質薄膜またはN1−B合金薄膜を被覆し
た導電性基体表面の上に設けられそして第2光導電層は
該第1光導電層の上に設けられる。また、第2光導電層
は可視光領域の一部有彩色光に対し感度を有し且つ他の
有彩色光を透過するものであシ、一方第1光導電層は少
なくともその第2光導電層を透過する有彩色光に対し感
度を有するものである。The electrophotographic photoreceptor of the present invention is an N1-B amorphous thin film or an N
Basically, a photoconductive layer is provided on the surface of a conductive substrate coated with a 1-B alloy thin film. In another embodiment of the electrophotographic photoreceptor of the present invention, the photoconductive layer can have a two-layer structure of a first photoconductive layer and a second photoconductive layer. A first photoconductive layer is disposed on a conductive substrate surface coated with an N1-B amorphous film or a N1-B alloy thin film, and a second photoconductive layer is disposed on the first photoconductive layer. Further, the second photoconductive layer is sensitive to some chromatic light in the visible light range and transmits other chromatic light, while the first photoconductive layer is sensitive to at least the second photoconductive layer. It is sensitive to chromatic light that passes through the layer.
次に、図面を参照して本発明の電子写真感光圧について
具体的に説明する。Next, the electrophotographic photosensitive pressure of the present invention will be specifically explained with reference to the drawings.
第1図に示すように、本発明の電子写真感光体は導電性
基体1の上に中間層2を設けさらにその上に光導電層3
を設けたものが基本構成である。導電性基体としては例
えばAl、ステンレススチールなどの金属板、5n02
、In2O5などの金属酸化物あるいはこれら金属また
は金属酸化物を被覆したプラスチックフィルム、紙また
は布などを用いることができる。中間層はNi −B非
晶質薄膜またはN1−B合金薄膜からなる。中間層は例
えば蒸着法、スパッタリング法など通常の方法によって
形成することができるが、工業的には無電解メッキ法が
最も有利である。中間層の膜厚は5oooA〜10μ好
ましくは1μ〜5μの範囲にある。例えばアルカリ性ニ
ッケルメッキ液を用いる場合、N1−Bの還元析出反応
は以下の反応式で表わすことができる。As shown in FIG. 1, the electrophotographic photoreceptor of the present invention has an intermediate layer 2 on a conductive substrate 1, and a photoconductive layer 3 on top of the intermediate layer 2.
The basic configuration is as follows. Examples of the conductive substrate include metal plates such as Al and stainless steel, and 5n02.
, In2O5, or other metal oxides, or plastic films, paper, or cloth coated with these metals or metal oxides can be used. The intermediate layer consists of a Ni-B amorphous thin film or an N1-B alloy thin film. The intermediate layer can be formed by conventional methods such as vapor deposition and sputtering, but electroless plating is industrially most advantageous. The thickness of the intermediate layer is in the range of 500A to 10μ, preferably 1μ to 5μ. For example, when using an alkaline nickel plating solution, the reduction and precipitation reaction of N1-B can be expressed by the following reaction formula.
4NiCt2 +NaBO2+ 8NaOH−+4Ni
+NaBO2+ 8NaC4+ 6H204NiC1
2+2NaBH4+6NaOH→2Ni2B+H2,、
+l8NaCl+、6H20得られたN1−B膜の構造
は非晶質であるが、非晶質でも整流性は大巾に改善され
て所望の電気特性を得ることができる。メッキ後、N1
−B膜に後処理を施すとNi −B合金となるが非晶質
膜と同等の整流性を維持し且つ導電性基体との密着性の
向上およびN1−B膜中の応力の解放などを図ることが
可能となる。また、光導電層としてはSe系憑光層を用
いることができ、その代表的な例としてはSe%5eT
e、 As2Se3.5e−Bi、5e−8bなどをあ
げることができる。4NiCt2 +NaBO2+ 8NaOH-+4Ni
+NaBO2+ 8NaC4+ 6H204NiC1
2+2NaBH4+6NaOH→2Ni2B+H2,,
+l8NaCl+, 6H20 The structure of the obtained N1-B film is amorphous, but even if it is amorphous, the rectification properties are greatly improved and desired electrical characteristics can be obtained. After plating, N1
When the -B film is post-treated, it becomes a Ni-B alloy, which maintains the same rectification properties as an amorphous film, improves adhesion to the conductive substrate, and releases stress in the N1-B film. It becomes possible to achieve this goal. Furthermore, a Se-based photoconductive layer can be used as the photoconductive layer, and a typical example thereof is Se%5eT
Examples include As2Se3.5e-Bi, 5e-8b, etc.
第2図は本発明による電子写真感光体の別の態様を示す
ものであって、導電性基体1の上に中間層2を設けさら
にその上に第1光導電層4および第2光導電層5を設け
たものである。第1光導電層は上記光導電層と同様にS
e系感光層であって、その膜厚は10〜150μ好まし
くは50〜120μの範囲にある。また、第2光導電層
としては正または負の帯電下あるいは両極性帯電下で可
視光領域の一部有彩色光によシ導体化するような光導電
性部材が用いられる。特に両極性帯電下で光導電性を示
す材料としてはフタロシアニン顔料、アゾ顔料のような
有機顔料、ピリリウム系染料およびこれら染料と樹脂と
の共晶錯体、電荷移動錯体などをあげることができる。FIG. 2 shows another embodiment of the electrophotographic photoreceptor according to the present invention, in which an intermediate layer 2 is provided on a conductive substrate 1, and a first photoconductive layer 4 and a second photoconductive layer are further provided thereon. 5. The first photoconductive layer is S like the above photoconductive layer.
The e-type photosensitive layer has a thickness in the range of 10 to 150 microns, preferably 50 to 120 microns. Further, as the second photoconductive layer, a photoconductive member is used which becomes a conductor with a portion of chromatic light in the visible light region under positive or negative charging or bipolar charging. In particular, materials that exhibit photoconductivity under bipolar charging include phthalocyanine pigments, organic pigments such as azo pigments, pyrylium dyes, and eutectic complexes and charge transfer complexes of these dyes and resins.
すなわち、第2光導電層は正または負のコロナ帯電を施
したときに電位保持能を有する素材で構成され且つ特定
波長の光で導体化する性質を有している。また、第2光
導電層は第2図に示すように単層であってもよいが特に
これに限定されるものではなく本発明の別の態様として
第3図に示すように電荷発生層6と電荷輸送層7の2層
にすることもできる。第2光導電層の膜厚は単層の場合
5〜60μ程度が適切であり。That is, the second photoconductive layer is made of a material that has potential retention ability when subjected to positive or negative corona charging, and has the property of becoming a conductor with light of a specific wavelength. Further, the second photoconductive layer may be a single layer as shown in FIG. 2, but is not particularly limited to this, and as another embodiment of the present invention, as shown in FIG. It is also possible to have two layers, ie, a charge transport layer 7 and a charge transport layer 7. In the case of a single layer, the thickness of the second photoconductive layer is suitably about 5 to 60 μm.
2層の場合電荷発生層は0.1〜5μ程度そして電荷輸
送層は5〜50μ程度が適切である。なお、本発明では
第1光導電層と第2光導電層との間に新たな層を設けて
電荷のリークを防止する等の機能向上を図ってもよい。In the case of two layers, it is appropriate that the charge generation layer has a thickness of about 0.1 to 5μ and the charge transport layer has a thickness of about 5 to 50μ. In the present invention, a new layer may be provided between the first photoconductive layer and the second photoconductive layer to improve functionality such as preventing charge leakage.
第2光導電層の形成にあたって結着剤を用いる場合には
その材料としては例えばポリエチレン、ポリスチレン、
ポリエステル、ポリアミド、ポリカーボネート、エポキ
シ、ウレタン、シリコーン、アルキッドなどの樹脂を用
いることができる。結着剤には可塑剤を併用できるが、
その添加量は結着剤に対し3層゛重量%iでが適当であ
る。可塑剤としてはジブチルフタレート、ジオクチルフ
タレートなどの一般に樹脂の可塑剤として用いられるも
のをそのまま使用できる。When a binder is used to form the second photoconductive layer, examples of the material include polyethylene, polystyrene,
Resins such as polyester, polyamide, polycarbonate, epoxy, urethane, silicone, and alkyd can be used. Plasticizers can be used together with binders, but
The appropriate amount of addition is 3 layers by weight % i based on the binder. As the plasticizer, those commonly used as plasticizers for resins, such as dibutyl phthalate and dioctyl phthalate, can be used as they are.
以下に比較例とともに実施例を掲げて本発明をさらに説
明するが本発明はこれに限定されるものではない。The present invention will be further explained below with reference to Examples along with Comparative Examples, but the present invention is not limited thereto.
実施例 1 本発明品−1のN1−B中間層を設けたものと。Example 1 Inventive product-1 with N1-B intermediate layer provided.
従来のN1−P中間層を設けたもの(比較品A−1)お
よび中間層のないもの(比較品B−1)の3種の試料を
作製し基体からのキャリヤの注入性を比較した。以下に
試料作製法と特性値を示す。Three types of samples were prepared, one with a conventional N1-P intermediate layer (comparative product A-1) and one without an intermediate layer (comparative product B-1), and the injectability of carriers from the substrate was compared. The sample preparation method and characteristic values are shown below.
本発明品−に表面が平滑なアルミニウム板をトリクレン
脱脂の後、ニッケルーホウ累無電解浴、 WMF−15
P (ワールドメタルフイニツシーン′グ社製)にて約
1μの膜厚のN1およびBをAl板上に析出させた。得
られたN1−B膜を湯洗、乾燥の後350℃で6時間熱
処理した。この後、As2Se3光導電層を真空蒸着法
でNi −B中間層上に設は本発明品とした。蒸着条件
は、基板温度200℃、真空度2〜5 X 10−’
Torr、ボート温度470℃、蒸着速度1μ7mi
nおよび膜厚60μとした。After degreasing an aluminum plate with a smooth surface using a nickel-boron electroless bath, WMF-15
N1 and B with a film thickness of about 1 μm were deposited on an Al plate using P (manufactured by World Metal Finishing Co., Ltd.). The obtained N1-B film was washed with hot water, dried, and then heat-treated at 350° C. for 6 hours. Thereafter, an As2Se3 photoconductive layer was formed on the Ni--B intermediate layer by vacuum evaporation to obtain a product of the present invention. The deposition conditions were: substrate temperature 200°C, degree of vacuum 2-5 x 10-'
Torr, boat temperature 470℃, deposition rate 1μ7mi
n and a film thickness of 60 μm.
比較品A−に本発明品と同様なアルミニウム板をトリク
レン脱脂の後ニックルーリン無電解浴ブルーシューヌ−
(日本カニゼン製)にて約1μの膜厚のNiおよびPを
Al板上に析出させ得られたN1−P膜を湯洗、乾燥の
後ろ50℃で6時間熱処理した。その後、本発明品と全
く同様な方法でA32Se3光導電層を設は比較品A−
iとした。For comparative product A-, an aluminum plate similar to the product of the present invention was degreased with trichlene and then soaked in a Nick Rulin electroless bath.
(manufactured by Nippon Kanigen) to precipitate Ni and P to a thickness of about 1 μm on an Al plate, and the resulting N1-P film was washed with hot water, dried, and then heat-treated at 50° C. for 6 hours. Thereafter, an A32Se3 photoconductive layer was formed on the comparative product A- in exactly the same manner as the present invention product.
It was set as i.
比較品B−に本発明品−1と同様なアルミニウム板をト
リクレン脱脂の後1本発明品−1と同様な方法でAl板
上にAs28e3光導電層を設は比較品B−1とした。Comparative product B- was prepared by using an aluminum plate similar to the present invention product-1 after degreasing with trichlene, and then forming an As28e3 photoconductive layer on the Al plate in the same manner as the present invention product-1.
以上のような方法で作製された本発明品および比較品の
正、負帯電電位をEPA (川口電機製)にて測定した
。但し、正コロナ帯電を+5KVとし、負コロナ帯電を
一5KVとした。測定結果を以下の表1に示す。The positive and negative charging potentials of the products of the present invention and comparative products produced by the method described above were measured using EPA (manufactured by Kawaguchi Electric). However, the positive corona charge was set to +5 KV, and the negative corona charge was set to -5 KV. The measurement results are shown in Table 1 below.
表 1
上記の結果から、Ni −B中間層を有する本発明品は
従来品(比較品)と比較して大巾に正孔の注入効率が改
善されていることがわかる。Table 1 From the above results, it can be seen that the product of the present invention having the Ni-B intermediate layer has greatly improved hole injection efficiency compared to the conventional product (comparative product).
実施例 2
実施例1で作製した本発明品−1、比較品A−1および
B−1t−ニトロセルロース4tt脂(シャドー社製)
の10重量パーセント溶液中に浸漬し各々のAs2Se
3第1光導亀層上にニトロセルロース樹脂からなる中間
層1μを形成した。その後真空蒸着法でこの中間層に5
eTe第2光導電層用電荷発生層を形成した。蒸着条件
は合金組成8eTe 8vt%、C125ppm、基板
温度80℃、真空度2〜5X 10−6 Torr 、
ボート温度320℃、蒸着速度5 u/min、膜厚5
μとした。さらに5eTe電荷発生層上にポリビニルカ
ルバゾールの5重量パーセント塩化メチレン溶液を塗布
乾燥して膜厚20μの第2光導電層用電荷移動層を設は
複合感光体本発明品−2,比較品A−2およびB−2を
得た。次にこれらの感光体に各々−5,7KVの1次コ
ロナ帯電を行った後、+ 5.5 Kvの2次コロナ帯
電を施し次いで■露光なし、■赤色フィルターを介した
露光、■白色露光を行い電位を測定したところ以下の表
2に示す結果を得た。Example 2 Invention product-1 produced in Example 1, comparative products A-1 and B-1 t-nitrocellulose 4tt fat (manufactured by Shadow Co., Ltd.)
Each As2Se was immersed in a 10 weight percent solution of
3. An intermediate layer of 1 μm made of nitrocellulose resin was formed on the first light guide layer. Afterwards, this intermediate layer is coated with 5
A charge generation layer for the eTe second photoconductive layer was formed. The deposition conditions were alloy composition 8eTe 8vt%, C125ppm, substrate temperature 80°C, degree of vacuum 2-5X 10-6 Torr,
Boat temperature: 320°C, deposition rate: 5 u/min, film thickness: 5
It was set to μ. Further, a 5% by weight methylene chloride solution of polyvinylcarbazole was applied and dried on the 5eTe charge generation layer to form a charge transfer layer for the second photoconductive layer with a film thickness of 20μ. 2 and B-2 were obtained. Next, each of these photoreceptors was subjected to a primary corona charge of -5.7 KV, and then a secondary corona charge of +5.5 Kv, and then subjected to three steps: (1) No exposure, (2) Exposure through a red filter, and (2) White exposure. When the potential was measured, the results shown in Table 2 below were obtained.
表 2
この表における本発明品と比較品間の赤色都電位差は実
施例1における負帯電電位差に相当することがわかる。Table 2 It can be seen that the difference in potential between the red dots between the inventive product and the comparative product in this table corresponds to the negative charging potential difference in Example 1.
従って本発明のN1−B中間層の介在により基体よシの
正孔の注入性が改善され2色カラー感光体の赤色部電位
の増加を図ることができたと判断できる。Therefore, it can be concluded that the presence of the N1-B intermediate layer of the present invention improves the hole injection properties of the substrate and makes it possible to increase the potential of the red portion of the two-color photoreceptor.
以上のようにして構成された本発明の電子写真感光体は
Ni −B中間層の存在により光導電層の静電特性を損
うことなく基体からの正孔の注入効率を大巾に増加させ
ることができる。したがって、2色カラー複写用後合感
光体の要求特性を充分満足しまたN1−B中間層は既知
の無電解メッキ法によシ工業的に容易に成膜することが
できる。The electrophotographic photoreceptor of the present invention constructed as described above greatly increases the injection efficiency of holes from the substrate without impairing the electrostatic properties of the photoconductive layer due to the presence of the Ni-B intermediate layer. be able to. Therefore, the required characteristics of a post-mixing photoreceptor for two-color color copying are fully satisfied, and the N1-B intermediate layer can be easily formed industrially by the known electroless plating method.
第1図ないし第3図は本発明による電子写真感光体の層
構成例を示す断面図である。
1・・・導電性基体、2・・・N1−B中間層、3・・
・光導電層、4・・・第1光導電層、5・・・第2光導
電層、6・・・電荷発生層、7・・・電荷輸送層。
特許出願人 株式会社 リ コ −1 to 3 are cross-sectional views showing examples of the layer structure of an electrophotographic photoreceptor according to the present invention. DESCRIPTION OF SYMBOLS 1... Conductive substrate, 2... N1-B intermediate layer, 3...
- Photoconductive layer, 4... First photoconductive layer, 5... Second photoconductive layer, 6... Charge generation layer, 7... Charge transport layer. Patent applicant Rico Co., Ltd. −
Claims (1)
覆した導電性基体表面に光導電層を設けたことを特徴と
する、電子写真感光体。 2) N1−B非晶質薄膜またはN1−B合金薄膜を被
覆した導電性基体表面に第1光導電層および第2光導電
層をこの順序で設けてなり、しかも前記第1光導電層が
少なくともその第2光導電層を透過する有彩色光に対し
感度を有しそして前記第2光導電層が可視光領域の一部
有彩色光に対し感度を有し且つ他の有彩色光を透過する
こと全特徴とする、電子写真感光体。 3)前記第2光導電層が電荷発生層と電荷輸送層との2
層からなることを特徴とする特許許請求の範囲第2項記
載の電子写真感光体。[Scope of Claims] 1) An electrophotographic photoreceptor, characterized in that a photoconductive layer is provided on the surface of a conductive substrate coated with an N1-B amorphous thin film or an N1-B alloy thin film. 2) A first photoconductive layer and a second photoconductive layer are provided in this order on the surface of a conductive substrate coated with an N1-B amorphous thin film or an N1-B alloy thin film, and the first photoconductive layer is The second photoconductive layer is sensitive to at least chromatic light that passes through the second photoconductive layer, and the second photoconductive layer is sensitive to some chromatic light in the visible light range and transmits other chromatic light. An electrophotographic photoreceptor with all the following characteristics. 3) The second photoconductive layer includes a charge generation layer and a charge transport layer.
The electrophotographic photoreceptor according to claim 2, characterized in that it consists of a layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22678783A JPS60119571A (en) | 1983-12-02 | 1983-12-02 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22678783A JPS60119571A (en) | 1983-12-02 | 1983-12-02 | Electrophotographic sensitive body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60119571A true JPS60119571A (en) | 1985-06-27 |
Family
ID=16850604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22678783A Pending JPS60119571A (en) | 1983-12-02 | 1983-12-02 | Electrophotographic sensitive body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60119571A (en) |
-
1983
- 1983-12-02 JP JP22678783A patent/JPS60119571A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6048574A (en) | Powder having at least one layer and process for preparing the same | |
US4942104A (en) | Flexible electrophotographic photoconductor having a polysulfone curl prevention layer | |
GB2073903A (en) | Laminated photosensitive plate for electrophotography | |
US4340658A (en) | Laminated ZnO photosensitive material | |
JPS60119571A (en) | Electrophotographic sensitive body | |
US5789127A (en) | Electrophotographic photoreceptor | |
JPH0731411B2 (en) | Negative charging electrophotographic photoreceptor | |
JPS60140358A (en) | Electrophotographic sensitive body | |
JPS60140359A (en) | Electrophotographic sensitive body | |
JPS6039225B2 (en) | electrophotographic photoreceptor | |
JPH01224770A (en) | Photoconductive coating film and electrophotographic sensitive body using said coating film | |
JP2729252B2 (en) | Electrophotographic photoreceptor | |
JPH01224771A (en) | Photoconductive coating film and electrophotographic sensitive body using said coating film | |
JPS6136755A (en) | Laser light photosensitive body | |
JP3057165B2 (en) | Electrophotographic photoreceptor | |
JPH0734124B2 (en) | Negative charging electrophotographic photoreceptor | |
JPS6255662A (en) | Electrophotographic sensitive body | |
JPS5974568A (en) | Electrophotographic receptor and its manufacture | |
JPS61235844A (en) | Electrophotographic sensitive body | |
JPS5997152A (en) | Electrophotographic receptor | |
JPH09278414A (en) | Production of multilayer metal oxide film coated powder | |
JPS63144359A (en) | Electrophotographic sensitive body | |
JPH01273053A (en) | Electrophotographic sensitive body | |
JPS63301045A (en) | Positively chargeable electrophotographic sensitive body | |
JPH01159661A (en) | Photoconductive film and electrophotographic sensitive body using same |