JPS60116105A - Voltage/current nonlinear resistor - Google Patents

Voltage/current nonlinear resistor

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Publication number
JPS60116105A
JPS60116105A JP58223333A JP22333383A JPS60116105A JP S60116105 A JPS60116105 A JP S60116105A JP 58223333 A JP58223333 A JP 58223333A JP 22333383 A JP22333383 A JP 22333383A JP S60116105 A JPS60116105 A JP S60116105A
Authority
JP
Japan
Prior art keywords
voltage
current
life
nonlinear resistor
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58223333A
Other languages
Japanese (ja)
Other versions
JPH0354441B2 (en
Inventor
金井 秀之
修 古川
今井 基真
孝 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58223333A priority Critical patent/JPS60116105A/en
Publication of JPS60116105A publication Critical patent/JPS60116105A/en
Publication of JPH0354441B2 publication Critical patent/JPH0354441B2/ja
Granted legal-status Critical Current

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  • Thermistors And Varistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は酸化亜鉛(ZnO) を主成分とする焼結体か
らなる電圧電流非直線抵抗体に関し、特に直流課電時の
寿命特性に優れた電圧電流非直線抵抗体に関する。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a voltage/current nonlinear resistor made of a sintered body containing zinc oxide (ZnO) as a main component, and which has particularly excellent life characteristics when DC current is applied. Concerning voltage-current nonlinear resistors.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来から各種の電圧電流非直−抵抗体(バリスタ)が研
死されているが、その中の一つ1CZnOを主成分とし
た焼結体を用いたものがあゐ。このZ!10を主成分と
した焼結体を用いたものVこおいては、各種副成分を添
加して所望の特性を得ることが試みられている。
Various types of voltage/current non-direction resistors (varistors) have been polished in the past, and one of them uses a sintered body mainly composed of 1CZnO. This Z! In V, which uses a sintered body containing 10 as a main component, attempts have been made to add various subcomponents to obtain desired characteristics.

最近、直流送′亀の研死開発が行なわれているが、間流
送電の場合と異なり、非直線抵抗体には常に一方向の電
界が加わるため、非常【過酷な条件となる。このような
過酷な条件に耐え得る直流寿命特性に浸れた電圧電流非
直線抵抗体は得られていないのが現状でらる。例えは特
開昭49−119188号に示されているZnOvcH
120g 、 OoO、8b203 、 Nip。
Recently, the development of DC power transmission has been carried out, but unlike in the case of intercurrent power transmission, a unidirectional electric field is always applied to a nonlinear resistor, resulting in extremely harsh conditions. Currently, a voltage-current nonlinear resistor with DC life characteristics that can withstand such harsh conditions has not been obtained. For example, ZnOvcH shown in JP-A-49-119188
120g, OoO, 8b203, Nip.

MnOを添加したもの、特公昭46−19472号に示
されているZnOにB、Biを添加したもの、特公昭5
6−33842号に示されているZnOに酸化硼素を含
むガラスを添加したもの等が知られているが、いずれも
十分な特性は得られていない。例えは直流課電時の漏れ
電流が時間とともに増加I〜、熱暴走を生じてしまい、
直流寿命特性に劣るものであった。
those with MnO added, those with B and Bi added to ZnO as shown in Japanese Patent Publication No. 19472/1972,
6-33842, in which a glass containing boron oxide is added to ZnO, etc., are known, but none of them have sufficient characteristics. For example, when DC voltage is applied, the leakage current increases over time, causing thermal runaway.
The DC life characteristics were poor.

また近年送電の尚圧化(UHV)が進むにつれ、要求さ
れる特性、例えば鍼圧電流非直勝特性、寿命特性前は過
酷なものとなってきている。
In addition, as power transmission becomes more ultra-high voltage (UHV) in recent years, the required characteristics, such as acupuncture current non-direct characteristics and life characteristics, are becoming more severe.

このように寿命特性、非直線性等の緒特性向上の要求は
年々大きくなってきており、このような要求を満足する
7hめ各所で研究が行なわれている。
As described above, the demand for improving the life characteristics, nonlinearity, and other performance characteristics is increasing year by year, and research is being conducted at various locations to satisfy these demands.

〔発明の目的〕[Purpose of the invention]

本発明は以上の点を考慮してなされたもので、直流寿命
特性l/′C優れた覗圧′亀流非直庫抵抗体を提供する
ことを目的とする。さらニ、電圧′ila流非直線特性
に優れた電圧電流非直線抵抗体を提供することを目的と
する。
The present invention has been made in consideration of the above points, and it is an object of the present invention to provide a non-direct-flow resistor with excellent DC life characteristics l/'C. A further object of the present invention is to provide a voltage/current nonlinear resistor having excellent voltage/current nonlinear characteristics.

〔発明の概要〕[Summary of the invention]

本発明は酸化亜鉛を主成分とし、副成分とじてビスマス
、コバルト、マンガン、アンチモン、ニッケルがそれぞ
れB 120B 、 Co、、03 、 MnO、Sb
208゜NiOに換算して、 Bi2O30,1−−5mo1%、、 Oo20g 0
.1〜5mo1%。
The main component of the present invention is zinc oxide, and the subcomponents are bismuth, cobalt, manganese, antimony, and nickel, respectively.
Converted to 208゜NiO, Bi2O30,1--5mo1%, Oo20g 0
.. 1-5 mo1%.

Mn(J o、 1〜5 moi1%、8b2030.
1〜5tno1%。
Mn (J o, 1-5 moi 1%, 8b2030.
1-5tno1%.

Ni0 0.1〜5 mal1% さらにアルミニウム、インジウム及びガリウムから選は
れた少なくとも一種か、All 、 In 、Gaに換
算して0.0001〜0.05 mai1%以下含有さ
れた基本組成分に対し、硼素がB203VC換昇して0
.001〜1wt%含有されるように硼素を含むガラス
が添力日された焼結体からなることを特徴とする電圧電
流非直線抵抗体である。
Ni0 0.1-5 ma1% Furthermore, at least one selected from aluminum, indium, and gallium, or 0.0001-0.05 mai1% or less in terms of All, In, and Ga based on the basic composition contained. , boron is converted to B203VC and becomes 0
.. The present invention is a voltage/current nonlinear resistor characterized in that it is made of a sintered body in which glass containing boron is added in an amount of 0.001 to 1 wt%.

上記のとと(B 1203 、 Co、、03 、’M
nO、5b203 、NiOにA、g、In、Gaの少
なくとも一種を含む基本成分にBを含むガラスを加えた
組成をとることによシ、直流寿命特性が大幅に向上する
。また交流印加時の寿命特性及び非直線特性にも優れて
いる。
The above (B 1203, Co,, 03, 'M
By adopting a composition in which a glass containing B is added to a basic component containing nO, 5b203, NiO and at least one of A, g, In, and Ga, the DC life characteristics are significantly improved. It also has excellent life characteristics and nonlinear characteristics when AC is applied.

本発明において、B i、03.0o20.、 、 M
nO、Sb、0. 。
In the present invention, B i, 03.0o20. , , M
nO, Sb, 0. .

NiUをそれぞれ0.1〜5mal1%としたのは、こ
の範囲をはずれると、非直線特性、寿命特性が劣・化し
てしまうからでちる。
The reason why NiU is set to 0.1 to 5 mal1% each is because if it deviates from this range, the nonlinear characteristics and life characteristics will deteriorate.

AA’ 、 In 、 Ga は、0.0001 ma
i1%〜0.05 mol饅の範囲で効果?11−8揮
する。A13+等は微量の添〃口で効果があられれるが
、特IC0,0001mo1%以上のm8710含有で
すぐれた効果を奏する。また、あまり多いとかえって特
性を劣化させてしまう。特に非直線特性におけるAI 
等の注有の効果は犬である。ごく微量で特性向上の効果
を得ることができるため、硝酸塩等の水に易暦な化合物
の水溶液としでl昆合褐≦力lすることが好ましい。
AA', In, Ga is 0.0001 ma
Is it effective in the range of i1% to 0.05 mol? 11-8. Although A13+ and the like can be effective with a small amount of sprinkling, they exhibit excellent effects when m8710 is contained in an amount of 0,0001 mo1% or more of IC. Moreover, if there is too much, the characteristics will deteriorate. AI especially in non-linear characteristics
The effect of such attention is a dog. Since the effect of improving properties can be obtained with a very small amount, it is preferable to prepare an aqueous solution of a compound such as nitrate in water.

この基本組成分に対しBをきむガラス恋加することによ
り、告時性が向上するが、特に直流寿命・が大幅に同上
する。すなわち、基本組成分だけでは直流課電時Vこ漏
2t′4流が経時的に増7JI+し、熱暴走を生じ、直
流用としで用いることは不可能であるが、BをH2O,
、に換算して0.001〜1 wt%含有させるごとに
より、漏れ電流の経時変化が少なくなるため、直可し寿
命特性が飛躍的に向上する。
By adding B-treated glass to this basic composition, the timekeeping performance is improved, but the direct current life in particular is significantly reduced. That is, if only the basic composition is used, the V leakage 2t'4 current increases over time when DC voltage is applied, causing thermal runaway, and it is impossible to use B for DC applications.
By adding 0.001 to 1 wt% in terms of , the change in leakage current over time is reduced, and the direct molding life characteristics are dramatically improved.

0.001 wt%より少ないとB含Mカラスの添加の
効果が現われず、0.001 wt%以上加えることに
ょシ特に直流寿命特性が向上する。1wt%を超えると
 ゛かえって直流寿命特性を劣化させるはかシか、交流
寿命、非直線特性まで劣化させることになる。
If it is less than 0.001 wt%, the effect of adding the B-containing M glass will not be apparent, and if it is added in an amount of 0.001 wt% or more, the DC life characteristics in particular will be improved. If it exceeds 1 wt%, it will not only deteriorate the DC life characteristics, but also deteriorate the AC life and non-linear characteristics.

A11JFtまない場合でも、B含有のガラスを加える
ことによ勺直流寿命をある程肛改善することができるが
、非直1a特性が劣化するのみならず、放電耐量の重大
な低下をまねく。
Even in the case where A11JFt is not present, the direct current life can be improved to some extent by adding B-containing glass, but this not only deteriorates the non-direct current characteristics but also leads to a significant decrease in discharge capacity.

電圧非直線抵抗体を電力用避雷器のごとき大きなサージ
吸収を目的とするものに利用するときは特に単位体積す
た9のエネルギー処理能力の優れているものが要求され
る。
When a voltage non-linear resistor is used for a device intended to absorb large surges, such as a power surge arrester, it is particularly required to have an excellent ability to handle energy per unit volume.

一般VC電圧非直線抵抗体のエネルギー処理能力を具体
的な数値であられすために2msの電流矩形波を印加し
て単位体積あたυの矩形波放電耐量を用いる。(試験方
法については例えばJffO−203P、43に記載さ
れている) ′lj″なわち、放電耐量が小さい場合には、電圧非直
線抵抗体に大電流インパルス紮印加すると沿面閃絡また
は貫通破壊を起こし、サージ吸収という本来の目的を果
せず、ひいては避雷器等の性能をも大きく1氏丁させて
しまう。
In order to express the energy processing capacity of a general VC voltage nonlinear resistor in a specific value, a 2 ms current rectangular wave is applied and a rectangular wave discharge capacity of υ per unit volume is used. (The test method is described in JffO-203P, 43, for example.) In other words, if the discharge withstand capacity is small, applying a large current impulse to a voltage nonlinear resistor will cause creeping flash or through-breakage. This will cause the surge to fail, failing to fulfill its original purpose of absorbing surges, and will also significantly reduce the performance of lightning arresters and other equipment.

AI、In、iJaを含まない糸ではこの放電耐量が小
さくなってしまう。
In yarns that do not contain AI, In, or iJa, this discharge withstand capacity becomes small.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、直流寿命特性゛【
bれた屯圧凋流非直線抵抗体を得ることができる。また
本発明抵抗体は、非直線特性及び交流寿命特性にも優れ
ている。
As explained above, according to the present invention, the DC life characteristic
It is possible to obtain a non-linear resistor with increased pressure. The resistor of the present invention also has excellent nonlinear characteristics and AC life characteristics.

従って直流高圧送′爾1用のサージ吸収体としての・避
m訝に有効である。また交?)IC送FJJ、用として
も有効でおる。qlにU HV用として好J1&である
。又、直流用、交流用として両者を同一ラインで製造で
きるため、コスト低ト寺の製造上のメリットも犬なるも
のである。寸た各特性VC匿れているため、民生用の素
子としても有効である。
Therefore, it is effective as a surge absorber for DC high-pressure feeding. Cross again? ) It is also effective for IC sending FJJ. It is good J1& for UHV in ql. Furthermore, since both DC and AC applications can be manufactured on the same line, there is also the advantage of low cost manufacturing. Since each characteristic VC is hidden, it is also effective as a consumer device.

〔発明の実施例〕[Embodiments of the invention]

以1ζ本発明の詳細な説明する。 Hereinafter, the present invention will be explained in detail.

ZnOIC副成分としてB 1203 、0o20s 
、 MnU 、 5b203゜N iU 、 Al(N
us )s・9H20及びBを含むカラスを所望の組成
比で調合し混合の後、バインダーとしてPVAを加え造
粒し、円板状の板材に成形した。
B 1203 , 0o20s as a ZnOIC subcomponent
, MnU, 5b203゜NiU, Al(N
After preparing and mixing a glass containing US)s・9H20 and B in a desired composition ratio, PVA was added as a binder and granulated, and formed into a disk-shaped plate material.

この仮相を乾燥した後1100〜1300°02hr程
度の焼成の後両面研暦を施して、[σ径20龍厚さ2m
mの焼結体を形成した。なお用いたガラスを第1表に示
す。
After drying this temporary phase, it was fired for about 1,100 to 1,300°02 hours, and then polished on both sides.
A sintered body of m was formed. The glasses used are shown in Table 1.

この試料の両面にAl溶射によシミ極を設は電lE屯流
非1α線抵抗体を杉成し各種特性を測定した。
Stain poles were formed on both surfaces of this sample by Al spraying, and an electric current non-1α ray resistor was formed on the surface of the sample, and various characteristics were measured.

この結果を第2表に示す。第2表には各組成分で、本発
明の範囲外のものについても比較例として示1−た。第
2表において、電圧電流非直線特性は”J 2 K A
/ V ImA s寿命特性はL400 で示す。’J
たBiはB2O5に換痺して基本成分に対する重量比で
示した。
The results are shown in Table 2. In Table 2, compositions outside the scope of the present invention are also shown as comparative examples. In Table 2, the voltage-current nonlinear characteristics are “J 2 K A
/ V ImA s life characteristic is indicated by L400. 'J
Bi was expressed as a weight ratio with respect to the basic components, with B2O5 added.

V (l m AI+f、流通1時の′電圧)■(0) I(400)は周囲温度90°Cとし、D、O,の場合
は0.75 X V’1mA の電圧を400時間印加
し続けた後室温で測定した漏れ屯υICでらシ、A、O
,の場合は0.85 X V+mAの鎮圧を400時間
印加し続けた後、室温で6111定した漏れ電流である
。■(0)は初期値であ勺、L4o、oはI(400)
と1(0)の比で表わした。
V (l m AI + f, 'voltage at 1 hour of flow) (0) I (400) is at an ambient temperature of 90°C, and in the case of D, O, a voltage of 0.75 x V'1 mA is applied for 400 hours. Leakage ton υIC measured at room temperature after continuing, A, O
In the case of , the leakage current was constant at 6111 at room temperature after a pressure of 0.85×V+mA was continuously applied for 400 hours. ■(0) is the initial value, L4o, o is I (400)
It is expressed as a ratio of 1 (0).

なお表中X印は400時間以内に熱暴走したことを示す
。又第2表中でガラス種類として第1表中に示した1社
を用いた。
Note that the mark X in the table indicates that thermal runaway occurred within 400 hours. Also, in Table 2, one company shown in Table 1 was used as the glass type.

第1表 第2表から明らかなように、本発明の実施例においては
、D、O,I (400)/I (0) が小さく直流
寿命に優れていることがわかる。また他の特性は、交流
寿命A、(j、 I (400)/l (0)、非直線
性VIKA /■1mA もともニ潰れていることがわ
かる。
As is clear from Tables 1 and 2, in the examples of the present invention, D, O, I (400)/I (0) is small and the DC life is excellent. In addition, it can be seen that the other characteristics are AC life A, (j, I (400)/l (0), nonlinearity VIKA/■1 mA, and are originally 2-fold.

比較例(試料Nn 38’、39 )からも明らかなよ
うに、ガラスの添7Jl]世が少ないとり、a、寿命に
劣シ、また多すぎると、υ、C0埒命に加えざらにA、
O,寿命、非直−性も劣化してしまう。
As is clear from the comparative examples (samples Nn 38', 39), if the amount of glass additive 7Jl is too small, the lifespan will be poor, and if it is too large, in addition to the life expectancy of υ, C0,
O, life and non-straightness also deteriorate.

父、比1咬例(試料Nn40.41)からも明らかなよ
うに、ガラスを適Byc含有させた場合でも、Al量が
範囲外でろる場合は、非直線特性で大きく劣り、l持V
C,Al量が多ずき゛る場合はA、U、l)、0印〃口
ともに熱暴走を生じてしまう。またiが少ない場合は多
い場合はど顕著ではないが寿命特性に劣っている。
As is clear from the ratio 1 bite example (sample Nn40.41), even if the glass contains an appropriate amount of Byc, if the amount of Al falls outside the range, the nonlinear characteristics will be greatly inferior, and the lvl.
If the amounts of C and Al are too large, thermal runaway will occur in both A, U, l) and the 0 mark. Furthermore, when i is small, the life characteristics are inferior, although it is not as noticeable when it is large.

さらKA7量が範囲外の場合は、放電耐量が大幅に劣化
する。第3表に試料階16の組成系でA/道を変えた時
の放電耐量を示す。同じく第1図に放゛亀耐量特性図を
示す。
Furthermore, if the amount of KA7 is outside the range, the discharge withstand capacity will be significantly degraded. Table 3 shows the discharge withstand capacity when changing the A/way for the composition system of sample floor 16. Similarly, Fig. 1 shows the radiation resistance characteristic diagram.

第3表及び第1図からも明らかなように、不兄明の範囲
では250 J /cya”程度であるが、範囲外だと
200 Ji儂3以下程度と極度に劣る。
As is clear from Table 3 and Figure 1, within the reasonable range it is about 250 J/cya'', but outside this range it is extremely inferior to about 200 J/cya'' or less.

第3表 A7と同様の効果をIn、Ga でも得ることができた
。その結果を第4表に示す。−法は前述と同様である〇 第4表から明らかなように、In、Gaもlと同様であ
り、Bを含むガラスを添加含有させることによシ、特に
り、C寿命に優れたバリスタと得ることができる。
Effects similar to those shown in Table 3 A7 could also be obtained with In and Ga. The results are shown in Table 4. -The method is the same as above.〇As is clear from Table 4, In and Ga are the same as L, and by adding glass containing B, a varistor with excellent C life can be obtained. can be obtained.

本発明による電圧電流非直線抵抗体中のBi、0゜につ
いて、結晶構造を検討したところ、α相(斜方晶系)が
生じていた。このα相は温度9組成等の製造条件でその
全Bi2O3中の比率が変化する。
When the crystal structure of Bi in the voltage-current nonlinear resistor according to the present invention was examined at 0°, it was found that an α phase (orthorhombic system) was formed. The ratio of this α phase in the total Bi2O3 changes depending on manufacturing conditions such as temperature and composition.

このα相の比率による特性の変化を調べたところ全Si
20.i中のα相t(Rα)が10%以上、ざらに好ま
しくは30%以上特に50%以上であれば、直流寿命特
性に優れていることが判明した。この傾向は本発明にお
ける組成範囲では同じであシ、A13+、 In”、 
Cta”、 vhずれも同様でラッた。しかしながら基
本成分が異なる場合は、α相は生じなかった。例えば、
Zn0−B 1203−Oo20.−MnO−N 1O
−sb2o3に0r20=及びSin、を加えた基本成
分にB2O3を添加含有させてもα相は生じなかったし
、又、非直線性、寿命特性とも改善はされなかった。
When we investigated the change in characteristics depending on the ratio of this α phase, we found that the total Si
20. It has been found that DC life characteristics are excellent when the α phase t (Rα) in i is 10% or more, preferably 30% or more, particularly 50% or more. This tendency is the same in the composition range of the present invention, A13+, In'',
Cta" and vh deviations were also the same. However, when the basic components were different, the α phase did not occur. For example,
Zn0-B 1203-Oo20. -MnO-N 1O
Even when B2O3 was added to the basic component of -sb2o3 plus 0r20= and Sin, no α phase was generated, and neither the nonlinearity nor the life characteristics were improved.

またこのα相は熱処理によって他の相に変化してし筐う
。よってこの結晶相を変化させ、る程度の加熱を含む工
程を加えないことが望ましい。
Further, this α phase changes into other phases by heat treatment. Therefore, it is desirable not to add a process that changes this crystal phase and includes a certain degree of heating.

特に直流印加の場合、Rα210でB4O0が改善され
、Rα> 30 ’ifにBα?50でほぼ一定の匝に
落ち着く。itαが小さいと、熱暴走を生じてしまう。
Especially in the case of direct current application, B4O0 is improved with Rα210, and Bα? It settles down to an almost constant level at 50. If itα is small, thermal runaway will occur.

B含有ガラスの添加がない場合は)もα=0であり、B
含有ガラスの添加によpα相が生じはじめる。
If no B-containing glass is added, α=0, and B
A pα phase begins to form upon addition of the containing glass.

紀5表に前述の試料中のα相−縫と特性の関係を示す。Table 5 shows the relationship between the α phase-stitch and the properties in the above-mentioned samples.

α相碕は、身重に示すRαで規定した。The α phase was defined by Rα shown in the baby's weight.

第5表 同様に1もαの変化によるA、01L400(破線) 
、 D、0L400(実線)の変化を42図に示す。同
図からも明らかなように、ltαがlO未溝の領域では
り、O。
Similarly to Table 5, 1 is also A due to changes in α, 01L400 (dashed line)
, D, 0L400 (solid line) is shown in Figure 42. As is clear from the figure, ltα grows in the region where lO is not grooved, and O.

印7Jl]時には熱暴走を生じてしまう。Rα〉3O程
度でA、O,’L400が安定し、lもa 2.50 
程eでり、O,B4O0も安定する。
[Mark 7Jl] Sometimes thermal runaway occurs. A, O, 'L400 becomes stable when Rα〉3O, and l is also a 2.50
As the temperature increases, O and B4O0 become stable.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図及び第2図は特性曲線図。 代理人 弁理士 則 近 意 佑(はが1名)第1図 第2図 Figures 1 and 2 are characteristic curve diagrams. Agent: Patent attorney Noriyuki Kon (1 person) Figure 1 Figure 2

Claims (1)

【特許請求の範囲】 酸化亜鉛を主成分とし、副成分としてビスマス。 コバルト、マンガン、アンチモン、ニッケルがそれぞれ
IJ 1203 、0o20B 、 MnU、 Sb、
03 、 NiOに換算して、 Hi2030.1〜5mo7%、0o20s 0.1〜
5mo1%。 Mn0 0.1−5mo1%、5b2030.1〜5r
no1% 。 Ni0 0.1〜5mo1% さらにアルミニウム、インジウム及びガリウムから選ば
れた少なくとも一種が、Al、 In 、Gaに換濃し
て0.0001〜0.05mo11以下含有された基本
組成分に対し、硼素が820.に換算して0.001〜
1wt%含有されるように硼素を含むガラスが重加され
た焼結体からなることを特徴とする電圧電流非直線抵抗
体。
[Claims] Zinc oxide is the main component, and bismuth is a subcomponent. Cobalt, manganese, antimony, and nickel are IJ 1203, 0o20B, MnU, Sb, respectively.
03, converted to NiO, Hi2030.1~5mo7%, 0o20s 0.1~
5mo1%. Mn0 0.1-5mol%, 5b2030.1-5r
no1%. Ni0 0.1 to 5 mo1% Furthermore, boron is 820. Convert to 0.001~
A voltage/current nonlinear resistor comprising a sintered body in which glass containing boron is added in an amount of 1 wt%.
JP58223333A 1983-11-29 1983-11-29 Voltage/current nonlinear resistor Granted JPS60116105A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58223333A JPS60116105A (en) 1983-11-29 1983-11-29 Voltage/current nonlinear resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58223333A JPS60116105A (en) 1983-11-29 1983-11-29 Voltage/current nonlinear resistor

Publications (2)

Publication Number Publication Date
JPS60116105A true JPS60116105A (en) 1985-06-22
JPH0354441B2 JPH0354441B2 (en) 1991-08-20

Family

ID=16796508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58223333A Granted JPS60116105A (en) 1983-11-29 1983-11-29 Voltage/current nonlinear resistor

Country Status (1)

Country Link
JP (1) JPS60116105A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62177901A (en) * 1986-01-31 1987-08-04 株式会社東芝 Manufacture of nonlinear resistance element
JP2008162820A (en) * 2006-12-27 2008-07-17 Mitsubishi Electric Corp Voltage nonlinear resistor, and manufacturing method of the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939095A (en) * 1972-08-23 1974-04-11
JPS49119188A (en) * 1973-03-20 1974-11-14
JPS5812306A (en) * 1981-07-16 1983-01-24 株式会社東芝 Oxide voltage nonlinear resistor
JPS6074404A (en) * 1983-09-30 1985-04-26 株式会社東芝 Voltage/current nonlinear resistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939095A (en) * 1972-08-23 1974-04-11
JPS49119188A (en) * 1973-03-20 1974-11-14
JPS5812306A (en) * 1981-07-16 1983-01-24 株式会社東芝 Oxide voltage nonlinear resistor
JPS6074404A (en) * 1983-09-30 1985-04-26 株式会社東芝 Voltage/current nonlinear resistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62177901A (en) * 1986-01-31 1987-08-04 株式会社東芝 Manufacture of nonlinear resistance element
JP2008162820A (en) * 2006-12-27 2008-07-17 Mitsubishi Electric Corp Voltage nonlinear resistor, and manufacturing method of the same

Also Published As

Publication number Publication date
JPH0354441B2 (en) 1991-08-20

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