JPS60111386A - Magnetic bubble memory element - Google Patents
Magnetic bubble memory elementInfo
- Publication number
- JPS60111386A JPS60111386A JP58217706A JP21770683A JPS60111386A JP S60111386 A JPS60111386 A JP S60111386A JP 58217706 A JP58217706 A JP 58217706A JP 21770683 A JP21770683 A JP 21770683A JP S60111386 A JPS60111386 A JP S60111386A
- Authority
- JP
- Japan
- Prior art keywords
- height
- pattern
- magnetic bubble
- basic
- side leg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は磁気バブルメモリ素子に係り、特に高密度磁気
バブルメモリ素子に適した、磁気バブル転送路を構成す
る基本転送素子の改良に関するも回路が通常用いられる
。これはパーマロイ薄膜バタンを形成し、これを面内で
回転する外部回転磁界で磁化することによりバブルを転
送する方式である。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a magnetic bubble memory device, and particularly relates to an improvement of a basic transfer device constituting a magnetic bubble transfer path suitable for a high-density magnetic bubble memory device. Usually used. This is a method that transfers bubbles by forming a permalloy thin film baton and magnetizing it with an external rotating magnetic field that rotates within the plane.
従来よシ磁気バブルメモリ素子に採用されているパーマ
ロイ駆動方式の磁気パズル転送用基本転送素子は、数M
bに高密度化された磁気バブルメモリ素子において、単
に比例縮小して用いただけでは、磁気バブル基本転送素
子上を充分に転送で定に動作する磁気バブル基本転送路
を有する磁気第1図は、従来の磁気バブル基本転送路の
バタン例を示す。(&)〜(d)の各バタンは、それぞ
れ、非対称シェブロンバタン、ハーフディスクバタン。The basic transfer element for magnetic puzzle transfer using the permalloy drive method conventionally used in magnetic bubble memory elements is several M
In a magnetic bubble memory element with a high density as shown in FIG. An example of a conventional magnetic bubble basic transfer path is shown. Each of the batons (&) to (d) is an asymmetrical chevron baton and a half disc baton, respectively.
C′パタ/、非対称Cバタンとして公知である。基本転
送路(a)〜(d)は、これらの基本パタン1を配列し
て形成される。外部から反時計方向に回転する回転磁界
HRを加えることによシ、磁気バブルは矢印P方向に転
送される。C' pattern/, known as asymmetrical C pattern. The basic transfer paths (a) to (d) are formed by arranging these basic patterns 1. By applying a rotating magnetic field HR rotating counterclockwise from the outside, the magnetic bubbles are transferred in the direction of arrow P.
さて、従来のこのような磁気バブル基本転送路において
、高密度化するために周期負を小さくした場合、磁気バ
ブルが充分安定に転送できなくなるという問題があった
。これは、磁気バブルが、ギャップ部gを転送するとき
に不安定になるためである。Now, in such a conventional magnetic bubble basic transfer path, when the negative period is made small in order to increase the density, there is a problem that magnetic bubbles cannot be transferred stably enough. This is because the magnetic bubble becomes unstable when transferring across the gap g.
したがって、ギャップ部gの転送特性を改良することに
よシ、安定動作する転送路を得ることができる。このた
めに、各釉実駁バタンを横側した。Therefore, by improving the transfer characteristics of the gap g, a transfer path that operates stably can be obtained. For this purpose, each glazed barbane was placed on its side.
この結果、基本バタン1の左右の足の部分の高さく長さ
)L11L2のバランスが大きく効くことが明らかにな
った。As a result, it became clear that the balance between the height and length (L11L2) of the left and right foot portions of the basic baton 1 was greatly effective.
従来の基本バタン1は、第1図に例示したように、入口
測定の高さLlと出口測定の高さL2は同じ値であった
。In the conventional basic baton 1, as illustrated in FIG. 1, the height Ll measured at the entrance and the height L2 measured at the exit were the same value.
本発明はとのi、1とL2を異なるように形成したもの
である。In the present invention, i, 1 and L2 are formed differently.
第2図に、本発明による磁気バブルメモリ素子の磁気バ
ブル基本転送路の一実施例を示す。図は基本パタ/2に
、非対称シェブロンバタンを用いた例を示しである。同
図(a)の例は、入口測定の高さLlを出口測定の高さ
L2よシ高くした例であシ、同図(b)は、逆にLlを
L2よシ低くした例である。FIG. 2 shows an embodiment of the magnetic bubble basic transfer path of the magnetic bubble memory device according to the present invention. The figure shows an example in which an asymmetrical chevron batten is used in the basic pattern /2. The example in figure (a) is an example in which the height Ll of the entrance measurement is higher than the height L2 in the exit measurement, and the figure (b) is an example in which Ll is conversely lower than L2. .
実験によると、このようにすることによシ、安定な転送
%性を得られるようKなった。Experiments have shown that by doing this, stable transfer performance can be obtained.
なお、実施例で紘、基本バタンに非対称シエプロンパタ
/を用いた場合について示したが、ノ・−フディスクバ
タン、Cパタン、非対称Cノくタン等の基本バタンを用
いた場合に対しても本発明は全く同様に適用できる。
−
〔発明の効果〕
以上述べたように、本発明によればLlとL2の高さを
異なるようにしたことによシ、安定な転送特性を有する
磁気バブルメモリ素子を提供することができる。In addition, although the example shows the case where an asymmetrical Sipron pattern is used as the basic baton, this book also applies to cases where basic batons such as the no-f disk batan, C pattern, and asymmetrical C-pattern are used. The invention is equally applicable.
- [Effects of the Invention] As described above, according to the present invention, by making the heights of Ll and L2 different, it is possible to provide a magnetic bubble memory element having stable transfer characteristics.
第1図は従来の磁気バブル基本転送路のノくターン図、
第2図は本発明による一実施例のノくターン図である。
1.2−−・・基本バタン、LI@・・・入口測定の高
さ、L2・・拳−出口測定の高さ。
代理人 弁理士 高 橋 明 未 ゛。
1
\ゝ。
第1図
第2図Figure 1 is a diagram of the conventional magnetic bubble basic transfer path.
FIG. 2 is a cross-section diagram of one embodiment of the present invention. 1.2--Basic slam, LI@...Height of entrance measurement, L2...Fist - height of exit measurement. Agent: Patent attorney Akimi Takahashi. 1 \ゝ. Figure 1 Figure 2
Claims (1)
さと出口側足の高さが異なる磁気バブルメモリ素子。A magnetic bubble memory element in which the entrance measurement height of the basic slam that forms the magnetic bubble transfer path and the height of the exit foot are different.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58217706A JPS60111386A (en) | 1983-11-21 | 1983-11-21 | Magnetic bubble memory element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58217706A JPS60111386A (en) | 1983-11-21 | 1983-11-21 | Magnetic bubble memory element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60111386A true JPS60111386A (en) | 1985-06-17 |
Family
ID=16708456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58217706A Pending JPS60111386A (en) | 1983-11-21 | 1983-11-21 | Magnetic bubble memory element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60111386A (en) |
-
1983
- 1983-11-21 JP JP58217706A patent/JPS60111386A/en active Pending
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