JPS6010783A - Elastic surface wave element - Google Patents
Elastic surface wave elementInfo
- Publication number
- JPS6010783A JPS6010783A JP58119069A JP11906983A JPS6010783A JP S6010783 A JPS6010783 A JP S6010783A JP 58119069 A JP58119069 A JP 58119069A JP 11906983 A JP11906983 A JP 11906983A JP S6010783 A JPS6010783 A JP S6010783A
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- elastic
- reflecting
- elastic wave
- transducer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 claims description 15
- 239000004020 conductor Substances 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 238000007733 ion plating Methods 0.000 abstract 1
- 239000011295 pitch Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
（１）発明の技術分野
本発明は弾性表面波素子の改良に関する。特に、入カド
ランスデューサによって発生される弾性波のうち、不所
望の周波数の弾性波が濾波され所望の周波数の弾性波の
みが出カドランスデューサをもって検出される弾性表面
波素子に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical field of the invention The present invention relates to improvements in surface acoustic wave elements. In particular, the present invention relates to a surface acoustic wave element in which, among elastic waves generated by an input quadrature transducer, elastic waves of undesired frequencies are filtered and only elastic waves of a desired frequency are detected by an output transducer.
（２）技術の背景
弾性表面波素子とは圧電媒体等の弾性体の表面にそって
伝播する弾性波を信号伝送媒体とする信号伝送手段をい
い、波の伝播速度が電磁波のそれの約１０分の１である
から、素子が小型軽量となり、波がその中を伝播する弾
性体よりなる基板の任意の場所で駆動・検出することが
でき、外部から伝播特性を容易に制御することができる
等の特徴を有し、特に、遅延素子としてひろく利用され
ているほか、増幅器・波形変換素子等として使用しうる
。(2) Background of the technology A surface acoustic wave element is a signal transmission means that uses elastic waves propagating along the surface of an elastic body such as a piezoelectric medium as a signal transmission medium, and the wave propagation speed is approximately 10 times that of electromagnetic waves. Because the size is 1/2, the element is small and lightweight, it can be driven and detected at any location on the substrate made of an elastic body through which waves propagate, and the propagation characteristics can be easily controlled from the outside. In particular, it is widely used as a delay element, and can also be used as an amplifier, waveform conversion element, etc.
ただ、弾性表面波は、単一周波数の入力信号をもって励
振しても、第１図に示すように特定の周波数を中心とし
て一定の周波数範囲に分布して発生することが通常であ
り、これがそのまま出カドランスデューサによって検出
されると、特に第３、第５、・・−の高調波が発生して
、出力信号の周波数特性を悪くする欠点がある。However, even when surface acoustic waves are excited with a single-frequency input signal, they are normally generated distributed over a certain frequency range centered around a specific frequency, as shown in Figure 1, and this is the case. When detected by the output transducer, particularly the third, fifth, .
（３）従来技術と問題点
上記の欠点を解消する手法として、出カドランスデュー
サの中心周波数を入カドランスデューサの中心周波数か
ら僅かにシフトしておくことが従来から知られている。(3) Prior Art and Problems As a method for solving the above-mentioned drawbacks, it has been known in the past to slightly shift the center frequency of the output transducer from the center frequency of the input transducer.
ただ、この手法によれば、高調波の発生は防止されるが
、高調波以外の周波数の濾波は不可能であり、従来技術
においては、任意の周波数の弾性波を濾波し所望の周波
数の弾性波のみを出カドランスデューサに検出させ、す
ぐれた周波数特性の出力信号を得ることのできる弾性表
面波素子は提供されておらない。However, although this method prevents the generation of harmonics, it is impossible to filter frequencies other than harmonics.In the conventional technology, elastic waves of any frequency are filtered and elastic waves of a desired frequency are filtered. No surface acoustic wave element has been provided that allows an output transducer to detect only waves and obtain an output signal with excellent frequency characteristics.
（４）発明の目的
本発明の目的は、任意の周波数の弾性波を除去し、所望
の周波数の弾性波のみを出力トランスデユーサに検出さ
せ、すぐれた周波数特性の出力信号を与える弾性表面波
素子を提供することにある。(4) Purpose of the Invention The purpose of the present invention is to remove elastic waves of arbitrary frequencies, allow the output transducer to detect only the elastic waves of a desired frequency, and provide surface acoustic waves with excellent frequency characteristics. The purpose is to provide devices.
（５）発明の構成
本発明の構成は、 入カドランスデューサと出カドラン
スデューサとの間の弾性波伝播路上に、特定の周波数の
弾性波を反射する反射手段が少なくとも１個設けられて
なる弾性表面波素子にある。そして、特定の周波数の弾
性波を反射する反射手段としては、除去されるべき弾性
波の周波数・振幅等に対応して決定されるピッチ、本数
、厚さ、ラインスペースを有する線状の導電体層（スト
リップ）、グループ、拡散層、イオンブレーティング層
をもって構成することができる。(5) Structure of the Invention The structure of the present invention is such that at least one reflecting means for reflecting elastic waves of a specific frequency is provided on the elastic wave propagation path between the input quadrature transducer and the output transducer. It is found in surface acoustic wave devices. As a reflecting means for reflecting elastic waves of a specific frequency, a linear conductor having a pitch, number, thickness, and line space determined according to the frequency, amplitude, etc. of the elastic wave to be removed is used. It can be composed of layers (strips), groups, diffusion layers, and ion blating layers.
本発明は、第２図に示すように特定のピッチをもって平
行に配設された複数の導電体層（ストリップ）等をもっ
て弾性波に対する反射器を容易に形成することができ、
そのピッチ（Ｐ）、本数、厚さ、ラインスペースを選択
することにより、反射率／周波数特性等を容易正確に制
御しうる点に注目してなされたものであり、除去したい
弾性波の周波数に対し反射率を有する反射手段を入カド
ランスデューサと出カドランスデューサとの間に介在さ
せたものである。除去する周波数が複数の場合は反射器
も複数個必要とすることは云うまでもない。According to the present invention, a reflector for elastic waves can be easily formed using a plurality of conductive layers (strips) arranged in parallel with a specific pitch as shown in FIG.
This was done with the focus on the fact that by selecting the pitch (P), number, thickness, and line space, reflectance/frequency characteristics, etc. can be easily and accurately controlled. On the other hand, a reflecting means having reflectivity is interposed between the input and output transducers. Needless to say, if a plurality of frequencies are to be removed, a plurality of reflectors are also required.
（６）発明の実施例
以下１図面を参照しつつ本発明の一実施例に係る弾性表
面波素子について更に説明する。(6) Embodiment of the Invention A surface acoustic wave device according to an embodiment of the invention will be further described below with reference to one drawing.
ピッチと周波数ｆとの関係は、
Ｐ＝Ｖ／２ｆ ’
但し、■は弾性波の速度
と表現しうるので、基板の材料が決定して弾性波の速度
Ｖが決定すれば、ピッチＰは容易に計算によってめうる
。例えば、基盤をＳＴ水晶をもって製造する場合速度■
は３，１５８■／秒であるから、例えば２９７ＭＨ２の
弾性波に対してはビー２チは５．３２１となる。The relationship between the pitch and the frequency f is P=V/2f' However, since ■ can be expressed as the velocity of the elastic wave, once the material of the substrate is determined and the velocity V of the elastic wave is determined, the pitch P can be easily determined. It can be determined by calculation. For example, if the board is manufactured using ST crystal, the speed ■
is 3,158 .mu./sec, so for example, for an elastic wave of 297 MH2, the beach 2 beach is 5.321.
次に、反射係数は本数によって規定されるので、所望の
反射係数を与えて本数を決定する。上側において、反射
係数を０．９５とした場合、必要本数は３００本である
。Next, since the reflection coefficient is defined by the number of lines, the number is determined by giving a desired reflection coefficient. On the upper side, if the reflection coefficient is 0.95, the required number is 300.
第３図参照
上記のようにして決定されたピッチ、本数、厚さ、ライ
ンスペース等の設計定数にもとづいて第３図に示すよう
なストリップの配置を決定し、これにもとづいて、フォ
トマスクを使用してなすフォトリソグラフィー法を使用
して、ＳＴ水晶基板上にレジストマスクを形成する。真
空蒸着法を使用して全面にアルミニウム（Ａ１）膜を数
千Ａの厚さに形成した後、レジストマスクを溶解除去し
て所望の領域にアルミニウム（Ａｔ）＃を残留して弾性
表面波素子を完成する０図において、■は基板であり、
２は入カドランスデューサであり、３はアルミニウムス
トリップよりなる反射手段であり、４は出カドランスデ
ューサである。Refer to Figure 3. Based on the design constants such as pitch, number, thickness, line space, etc. determined as above, the arrangement of the strips as shown in Figure 3 is determined, and based on this, the photomask is constructed. A resist mask is formed on the ST quartz substrate using a photolithography method. After forming an aluminum (A1) film to a thickness of several thousand amps over the entire surface using a vacuum evaporation method, the resist mask is dissolved and removed, leaving aluminum (At) # in the desired areas to form a surface acoustic wave device. In the diagram 0 that completes , ■ is the board,
2 is an input quadrature transducer, 3 is a reflecting means made of an aluminum strip, and 4 is an output quadrature transducer.
（７）発明の詳細
な説明せるとおり、本発明によれば、弾性表面波素子に
おいて、入カドランスデューサと出カドランスデューサ
との間の弾性波伝播路上に、特定の周波数の弾性波を反
射する反射手段が設けられているので、任意の周波数の
弾性波を除去し所望の周波数の弾性波のみを出カドラン
スデューサに検出させ、すぐれた周波数特性の出力信号
を与える弾性表面波素子を提供することができる。(7) As described in detail, according to the present invention, in a surface acoustic wave element, an elastic wave of a specific frequency is reflected on an elastic wave propagation path between an input quadrature transducer and an output transducer. The present invention provides a surface acoustic wave element that removes elastic waves of any frequency and allows the output transducer to detect only elastic waves of a desired frequency, thereby providing an output signal with excellent frequency characteristics. can do.
【図面の簡単な説明】
第１図は弾性表面波の振幅・周波数特性の傾向を示すグ
ラフである。第２図は弾性表面波用反射器を説明する図
である。第Ｘ図は本発明の一実施。
例に係る弾性表面波素子の概念的構成を示す平面図であ
る。
ｌ・・・基板、 ２・・Φ人カドランスデューサ、３・
・φ反射手段、４φ・Ｏ出力トランスデューサ。
第１図
贋−炎致
錦２０
ｈｐ−＋
第３図BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a graph showing trends in amplitude and frequency characteristics of surface acoustic waves. FIG. 2 is a diagram illustrating a surface acoustic wave reflector. Figure X shows one implementation of the invention. FIG. 2 is a plan view showing a conceptual configuration of a surface acoustic wave element according to an example. l... Board, 2... Φ person quadrant transducer, 3...
・φ reflection means, 4φ・O output transducer. Fig. 1 Fake - Enchi Nishiki 20 hp - + Fig. 3
Claims (1)
弾性波伝播路上に、特定の周波数の弾性波を反射する反
射手段が少なくとも１個設けられてなる弾性表面波素子
。A surface acoustic wave element comprising at least one reflecting means for reflecting an elastic wave of a specific frequency on an acoustic wave propagation path between an input quadrature transducer and an output quadrature transducer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58119069A JPS6010783A (en) | 1983-06-30 | 1983-06-30 | Elastic surface wave element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58119069A JPS6010783A (en) | 1983-06-30 | 1983-06-30 | Elastic surface wave element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6010783A true JPS6010783A (en) | 1985-01-19 |
Family
ID=14752117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58119069A Pending JPS6010783A (en) | 1983-06-30 | 1983-06-30 | Elastic surface wave element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6010783A (en) |
-
1983
- 1983-06-30 JP JP58119069A patent/JPS6010783A/en active Pending
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