JPS60103534A - Member for recording information - Google Patents

Member for recording information

Info

Publication number
JPS60103534A
JPS60103534A JP58210378A JP21037883A JPS60103534A JP S60103534 A JPS60103534 A JP S60103534A JP 58210378 A JP58210378 A JP 58210378A JP 21037883 A JP21037883 A JP 21037883A JP S60103534 A JPS60103534 A JP S60103534A
Authority
JP
Japan
Prior art keywords
layer
metal
recording
metal compound
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58210378A
Other languages
Japanese (ja)
Inventor
Toru Oishi
徹 大石
Sadaji Miyazaki
宮崎 貞二
Masabumi Nakao
中尾 正文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Chemical Industry Co Ltd
Priority to JP58210378A priority Critical patent/JPS60103534A/en
Publication of JPS60103534A publication Critical patent/JPS60103534A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24312Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24314Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25708Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/2571Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25715Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/254Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
    • G11B7/2542Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of organic resins
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/254Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
    • G11B7/2548Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of inorganic materials

Abstract

PURPOSE:To suppress the reduction of S/N ratio of quality of a reproduced signal by laminating sequentially a metallic recording layer and a metallic compound stabilizing layer on a base and providing a protection layer made of an inorganic material or an organic material on the upper layer so as to prevent exfoliation of the metallic compound stabilizing layer. CONSTITUTION:A mixture layer 2 of a metallic compound and a metal, the metallic recording layer 5, and the metallic compound stabilizing layer 6 are provided on the base 1 and the protection layer 7 made of the inorganic material or the organic material is provided to the upper layer. Bi alloy added with Sb or Sn is especially preferred as the metal constituting the metallic recording layer 5 because it has high sensitivity and high S/N ratio. Oxides of Si, Al, Ge or other metals are used for the metallic compound stabilizing layer 6. Oxide, fluoride or nitride of tantalum is preferred as the inorganic material used for the protection layer 7 and a fluoro-polymer is preferred as the organic substance. Even if faces opposite to each other are contacted at pit forming in the hollow sandwich structure, no exfoliation of the metallic compound stabilizing layer is caused.

Description

【発明の詳細な説明】 記録用部材、さらに詳しくいえば、透明な基板側からレ
ーザー光を照射した場合でも安定性の優れた記録が可能
な情報記録用部材に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a recording member, and more specifically, to an information recording member capable of recording with excellent stability even when laser light is irradiated from the transparent substrate side.

従来,レーザー光線などの高密度エネルギーをスポット
に集光させて記録媒体に照射し、媒体の一部を融解させ
るが、あるいは蒸発させることによシ、これを変形又は
除去して記録を行う方法は、いわゆるヒートモード記録
法として知られている。
Conventionally, high-density energy such as a laser beam is focused into a spot and irradiated onto the recording medium to melt or evaporate a portion of the medium, thereby deforming or removing it for recording. This is known as the so-called heat mode recording method.

そして、このヒートモード記録法は、薬品などの処理液
を必要としないドライタイプであること、リアルタイム
記録法であること、高速かつ高コントラストで大容量記
録が可能なこと及び情報の追加書き込みが可能なことな
ど多くの利点を有しているので、例えばマイクロ画像,
 CQM, ビデオディスク、コンピューターメモリな
ど広い用途を有している。
This heat mode recording method is a dry type that does not require processing liquids such as chemicals, is a real-time recording method, is capable of high-speed, high-contrast, large-capacity recording, and allows additional writing of information. For example, micro images,
It has a wide range of uses including CQM, video discs, and computer memory.

ところで、前記のヒートモード記録法を、特にビデオデ
ィスク、コンピューターメモリ、文書ファイル、静止画
ファイルなどに用いる場合には、通常、円形のガラスや
を泄糊脂fryの宜がl一如だ拐を形成したディスクを
高速回転させながらレーザー光を集光し、記録材に0.
6μm〜1.5μm 程度の孔を形成することによシ情
報を記録する方法が採られている。この際の孔の位置及
び大きさは、パルス変調したレーザー光の出力波形に依
存し、レーザーに入力した情報に対応して形成される。
By the way, when using the heat mode recording method described above, especially for video discs, computer memories, document files, still image files, etc., it is usually necessary to use a circular glass plate to remove the fat. While rotating the formed disk at high speed, a laser beam is focused, and a 0.
A method of recording information by forming holes of about 6 μm to 1.5 μm has been adopted. The position and size of the hole at this time depend on the output waveform of the pulse-modulated laser light and are formed in accordance with the information input to the laser.

記録材に記録された信号の読み出しは、高速回転させた
記録材に記録閾値な超えない程度の弱い出力のレーザー
光を集光し、その反射光の変化を検出することによシ行
うことができる。
Reading out signals recorded on a recording material can be done by focusing a laser beam with a weak output that does not exceed the recording threshold on the recording material that is rotating at high speed, and detecting changes in the reflected light. can.

前記の方法でヒートモード記録を行う材料としては、こ
れまで多くの材料が提案されてきたが、レーザー光に対
する感度、再生信号品質のS/N比、及び安定性の点で
満足できるものはなかつtQ本発明者らは、このような
従来のヒートモード記録拐料のもつ欠点を克服するため
に種々の研究を重ねて、先に金属記録層と、金属化合物
及び金属から成る混合層とを積層させることにより、形
状の整った孔を形成させることができ、その結果、Sハ
此の向上とレーザー光に対する感度の大幅な向上が得ら
れ、さらにクロム層を該金属記録層と基板との間に設け
ることによシ、特性がよシ向上す・るという知見を得た
。−また、記録形態としては、第1図に示すように、ピ
ット形成時に金属記録層5が溶融分散し開孔され、その
際上層に設けられた金属化合物安定化層6が盛シ上がり
、このような形態を保持することにょシ、記録特性及び
安定性が良好となることが分った。
Many materials have been proposed for heat mode recording using the above method, but none have been found to be satisfactory in terms of sensitivity to laser light, S/N ratio of reproduced signal quality, and stability. tQ In order to overcome the drawbacks of such conventional heat mode recording materials, the present inventors have conducted various studies and developed a method in which a metal recording layer and a mixed layer consisting of a metal compound and a metal are first laminated. By doing so, it is possible to form well-shaped holes, and as a result, this improvement in S and a significant improvement in sensitivity to laser light are obtained. We obtained the knowledge that the characteristics can be greatly improved by providing the - Also, as a recording form, as shown in FIG. 1, when pits are formed, the metal recording layer 5 is melted and dispersed to form holes, and at this time, the metal compound stabilizing layer 6 provided on the upper layer rises up. It has been found that by maintaining such a configuration, the recording characteristics and stability are improved.

ところで、第2図及び第3図に示すように、記録膜を傷
やほこシから保護するためには、一般に記録膜を中空サ
ンドウィッチ構造にょシ守る方法が良好である。しかし
ながら、該構造においては、基板として弾性があるもの
を用いると、取シ扱い時に対向する面が接触する可能性
がある。
By the way, as shown in FIGS. 2 and 3, in order to protect the recording film from scratches and dust, it is generally good to protect the recording film in a hollow sandwich structure. However, in this structure, if an elastic substrate is used, the opposing surfaces may come into contact during handling.

そして、対向する面が接触すると、対向する面のいずれ
かの面又は両面の記録後に盛シ上がった該金属化合物安
定化層は、対向する面の材質に関係なく剥離を生じたシ
、あるいは他の部分にピンホールも発生したシする可能
性がある。このようにして該金属化合物安定化層に剥離
を生じると、その剥離した個所から酸化性雰囲気が侵入
し、金属記録層が酸化されて、透明化したシ、あるいは
それにビンポールが発生する可能性がある。また、記録
特性においても、再生信号品質であるVN比が接触後に
数aB低下する。
When the opposing surfaces come into contact, the metal compound stabilizing layer that bulges after recording on either or both of the opposing surfaces may peel off regardless of the material of the opposing surfaces, or may cause other damage. Pinholes may also occur in the area. If peeling occurs in the metal compound stabilizing layer in this way, an oxidizing atmosphere may enter from the peeled area, oxidizing the metal recording layer, and creating a transparent layer or vinyl poles. be. Furthermore, regarding the recording characteristics, the VN ratio, which is the quality of the reproduced signal, decreases by several aB after contact.

本発明者らは、このように対向する而が接触した際に生
じる剥離を防止するために、さらに鋭意検討を進めた結
果、金属化合物安定化層の上層に、無機物質又は有機物
質から成る保護層を設けることにより、その目的を達成
することができ、また記録4,1′性である再生信号品
質のC/N比の低下も抑制しうろことを見出し、この知
見に基づいて本発明を完成するに至った。
In order to prevent the peeling that occurs when opposing bodies come into contact in this way, the inventors of the present invention have conducted further intensive studies and found that a protective layer made of an inorganic or organic substance is added to the upper layer of the metal compound stabilizing layer. It has been discovered that by providing a layer, the objective can be achieved and the reduction in the C/N ratio of the reproduced signal quality, which is a characteristic of recording 4,1', can be suppressed.Based on this knowledge, the present invention has been developed. It was completed.

すなわち、本発明は、エネルギービームの照射によシ、
ピットを形成させて情報を記録するだめの、基板上に金
属記録層及び金属化合物安定化層を順次積層した構造を
もつ情報記録媒体において、該金属化合物安定化層の上
層に、無機物質又は有機物質から成る保護層を設けたこ
とを特徴とする本発明の情報記録用部材において、金属
化合物安定化層の上層に設けた保護層に用いる無機物質
としては、タンタルの酸化物、フッ化物、窒化物などが
、また有機物質としてはフッ素系ポリマーが好ましいも
のとして挙げられる。
That is, the present invention provides an energy beam irradiation method.
In an information recording medium having a structure in which a metal recording layer and a metal compound stabilizing layer are sequentially laminated on a substrate to record information by forming pits, an inorganic or organic material is added to the upper layer of the metal compound stabilizing layer. In the information recording member of the present invention, which is characterized in that it is provided with a protective layer made of a substance, the inorganic substance used in the protective layer provided on the metal compound stabilizing layer includes tantalum oxide, fluoride, and nitride. Preferred organic materials include fluorine-based polymers.

この保護層の膜厚は、タンタルの酸化物、フン化物、蟹
化物などの無機保護層の場合、50〜500Xの範囲、
特に100〜300^の範囲が好ましこのように、無機
物質又は有機物質から成る保護層を設けた場合、対向す
る面が接触した際に生じる剥離を防止しうるのは、対向
する面が接触しても、該金属化合物安定化層の上層に、
無機物質又は有機物質から成る保護層が存在することに
よって、対向する面の材質の種類にかかわらず、対向す
る面との付着力を小さくしうるために、剥離が起らなく
なるものと考えられる。
The thickness of this protective layer is in the range of 50 to 500X in the case of an inorganic protective layer such as tantalum oxide, fluoride, and crabide.
In particular, the range of 100 to 300^ is preferable.When a protective layer made of an inorganic or organic substance is provided in this way, peeling that occurs when the opposing surfaces come into contact can be prevented only when the opposing surfaces come into contact. Even if the upper layer of the metal compound stabilizing layer is
It is thought that the presence of the protective layer made of an inorganic or organic substance reduces the adhesive force between the opposing surfaces and prevents peeling, regardless of the type of material of the opposing surfaces.

前記無機保護層の膜厚が50λ未満では、薄すぎて付着
力を低下させる効果が小さくて、剥離を防止する効果が
得られず、保護層を設けない場合とほぼ同程度で剥離を
生じ、一方500Kを超えると膜厚が厚すぎて著しい感
度低下を引き起し、記録不可能となる。
If the thickness of the inorganic protective layer is less than 50λ, the inorganic protective layer is too thin and the effect of reducing adhesion is small, and the effect of preventing peeling cannot be obtained, and peeling occurs to the same extent as when no protective layer is provided. On the other hand, if the temperature exceeds 500K, the film thickness is too thick, causing a significant decrease in sensitivity, making it impossible to record.

また、前記イ」槻保躾層の膜厚が100X未満では無機
保護層の場合と同様に膜厚が薄いために、付着力を低下
させる効果が小さくて、剥離を防止する十分な効果が得
られず、保護層を設けない場合とほぼ同程度で剥離を生
じるし、一方500Xを超えると膜厚が厚すぎて剥離を
生じる。
Furthermore, if the film thickness of the above-mentioned A. However, if the thickness exceeds 500X, the film thickness is too thick and peeling occurs.

本発明の情報記録用部材においては、金属記録層と基板
との間に金属化合物と金属とから成る混合層又はクロム
層を介在させる方法、金属記録層と基板との間に、基板
側から順次クロム層及び金属化合物層を設ける方法、金
属記録層と基板との間に、基板から順次金属化合物と金
属とから成る混合層及び金属化合物層を設ける方法など
が、特性の向上のために好ましく行われる。
In the information recording member of the present invention, there is a method in which a mixed layer or a chromium layer consisting of a metal compound and a metal is interposed between the metal recording layer and the substrate; A method of providing a chromium layer and a metal compound layer, a method of providing a mixed layer and a metal compound layer consisting of a metal compound and a metal sequentially from the substrate between the metal recording layer and the substrate, etc. are preferably carried out in order to improve the characteristics. be exposed.

次に、これらの構造を添付図面に従って説明すると、第
4図は基板1の上に金属化合物と金属とから成る混合層
2を設け、その上に金属記f!、層5、金属化合物安定
化層6を設け、さらにその上層に無機物質又は有機物質
から成−る保護層7を設けた構造、第5図は第4図にお
いて金属化合物と金属とから成る混合層2と金属記録層
5との間に、金属化合物層4を設けた構造、第6図は第
4図において金属化合物と金属とから成る混合層2の代
シに、クロム層3を設けた構造、第7図は第6図におい
てクロム層3と金属記録層5との間に金属化合物層4を
設けた構造である。
Next, these structures will be explained according to the attached drawings. FIG. 4 shows a mixed layer 2 made of a metal compound and a metal provided on a substrate 1, and a metal layer f! , a structure in which a layer 5, a metal compound stabilizing layer 6 is provided, and a protective layer 7 made of an inorganic or organic material is provided on top of the layer 5, and FIG. 5 shows a mixture of a metal compound and a metal in FIG. 4. A structure in which a metal compound layer 4 is provided between the layer 2 and the metal recording layer 5, and FIG. 6 shows a structure in which a chromium layer 3 is provided in place of the mixed layer 2 consisting of a metal compound and metal in FIG. 7 shows a structure in which a metal compound layer 4 is provided between the chromium layer 3 and the metal recording layer 5 in FIG. 6.

本発明の情報記録用部材において、支持体としての役割
を果す基板としては、例えばアルミニウム、マイカ、表
面着色したステンレス鋼なども用いられるが、基板側か
らレーザー光を照射する場合は、該基板は透明であるこ
とが必要である。
In the information recording member of the present invention, aluminum, mica, surface-colored stainless steel, etc. can be used as the substrate that plays the role of a support, but when irradiating laser light from the substrate side, the substrate It needs to be transparent.

一般に、物質の透明性は入射光線の波長によって相違す
ることが知られているが、本発明部材に情報を記録する
場合には、半導体レーザーやアルゴンガスレーザー、H
θ−Neレーザー、その他の可視領域あるいは近赤外領
域に発振波長をもつ各種のレーザーやキセノンフラッシ
ュランプなどの光波特性を異にする多種類の光源を用い
ることができる。しかし、4に定の光源の使用を所望す
る場合には、その光源がもつ光波特性に適した透明性を
冶する材質のものを基板とすることが、よシ感度の向上
をはかる上で好ましい。そして、透明性については、入
射光の約90%以上の透過率を示すことを一応の目安と
することができる。
Generally, it is known that the transparency of a substance differs depending on the wavelength of incident light, but when recording information on the member of the present invention, semiconductor laser, argon gas laser, H
Various types of light sources with different light wave characteristics can be used, such as a θ-Ne laser, various other lasers with oscillation wavelengths in the visible region or near-infrared region, and xenon flash lamps. However, if it is desired to use the light source specified in 4., it is preferable to use a substrate made of a material that has transparency suitable for the light wave characteristics of the light source in order to improve sensitivity. . As for transparency, it can be assumed that the material exhibits a transmittance of approximately 90% or more of incident light.

前記光源のいずれに対しても、十分な透過率をもつ基板
としては、ガラスなどの無機材料又はポリエステル、ポ
リプロピレン、ポリカーボネート、ホリ塩化ヒニル、ポ
リアミド、ポリスチレン、ポリメチルメタクリレートな
どのポリマー、あるいはこれらの変形ポリマー、コポリ
マー、ブレンド物などの有機材料から成るフィルム又は
シートを挙げることができる。また、ビデオディスクな
どのように基板自体の表面平滑性が信号のVN比に大き
な影響を与える場合には、別の基板上に前記の材料をス
ピンコードなどで均一に塗布した基板を用いることが好
ましい。
Substrates with sufficient transmittance for any of the above light sources include inorganic materials such as glass, or polymers such as polyester, polypropylene, polycarbonate, polyhinyl chloride, polyamide, polystyrene, polymethyl methacrylate, or variations thereof. Mention may be made of films or sheets made of organic materials such as polymers, copolymers, blends, etc. In addition, in cases where the surface smoothness of the substrate itself has a large effect on the VN ratio of the signal, such as in the case of video discs, it is possible to use a substrate on which the above-mentioned material is evenly coated using a spin cord or the like on another substrate. preferable.

特に好ましく用いられる基板としては、ポリエステル又
はポリメチルメタクリレートから成るフィルム及びシー
トを挙げることができる。
Particularly preferably used substrates include films and sheets made of polyester or polymethyl methacrylate.

本発明の記録用部材において、第4図及び第5図に示さ
れる構造をもつ部材に用いられる金属化合物と金属とで
形成される混合層の金属については、金属化合物に対し
て安定であ多さえすれば特に制限はないが、好ましいも
のとしては、例えばAI、Si、8c、Ti、V、Or
、Mn、F8.Co 、Ni。
In the recording member of the present invention, the metal of the mixed layer formed of the metal compound and metal used in the member having the structure shown in FIGS. 4 and 5 is stable with respect to the metal compound and has many properties. There is no particular restriction as long as it is, but preferred examples include AI, Si, 8c, Ti, V, Or
, Mn, F8. Co, Ni.

Ou、Zn、Ga、Ge 、、As、Sr、Y、Zr、
Nb、Tc。
Ou, Zn, Ga, Ge, As, Sr, Y, Zr,
Nb, Tc.

Ru 、 Rh 、 Pd、 Ag 、In、Sn、S
b、La、Hf、Ta。
Ru, Rh, Pd, Ag, In, Sn, S
b, La, Hf, Ta.

Re、工r 、 Tl 、 Pb 、 Bi 、 D7
 、 Er 、 Gd 、 Nd 、 Pr 。
Re, Engr, Tl, Pb, Bi, D7
, Er, Gd, Nd, Pr.

Bm、 Mo、 Au、 Be、 W 、 Pt 、 
Teなどを挙げることができる。
Bm, Mo, Au, Be, W, Pt,
Examples include Te.

これらの金属の中でレーザー記録時の熱に対して安定な
ものが望ましく、特に好ましいものとしHf 、 Ta
 、 Re 、 Ir 、 Dy 、 Er 、 Nd
 、 Mo 、 W 。
Among these metals, those that are stable against heat during laser recording are desirable, and particularly preferred are Hf, Ta,
, Re, Ir, Dy, Er, Nd
, Mo, W.

ptなどが挙げられる。Examples include pt.

これらの金属は単独で用いてもよいし、また。These metals may be used alone or.

2種以上組み合わせて用いてもよい。Two or more types may be used in combination.

他方、金属化合物については、金属と混合層を形成する
ものであればどのようなものでもよい75人好ましいも
のとしては、例えばLi 、 Be 、 B 。
On the other hand, as for the metal compound, any compound may be used as long as it forms a mixed layer with the metal. Preferred examples include Li, Be, and B.

Mg 、 Al 、 Si 、 C!a 、 sc 、
 Ti 、 V 、 Or 、 Mn 。
Mg, Al, Si, C! a, sc,
Ti, V, Or, Mn.

Fe 、 Co 、 Ni 、 Cu 、 Zn 、 
Ga 、 Ge 、 As 、 Sr 。
Fe, Co, Ni, Cu, Zn,
Ga, Ge, As, Sr.

Y 、 Zr 、 Nb 、 Tc 、 Ru 、 R
h 、 Pd 、 Ag、、、工ね。
Y, Zr, Nb, Tc, Ru, R
h, Pd, Ag...

Sn 、 Sb 、 Ba 、 La 、 Hf 、 
Ta 、 Re 、工r’、Pb。
Sn, Sb, Ba, La, Hf,
Ta, Re, r', Pb.

Bi 、 Ce 、 Mo 、 Te 、 W 、 D
y 、 Er 、 Gd 、 Nd 。
Bi, Ce, Mo, Te, W, D
y, Er, Gd, Nd.

Pr 、 Sm、 、 Tlの酸化物、フッ化物又は窒
化物を搦げることができる。
Oxides, fluorides or nitrides of Pr, Sm, Tl can be used.

よ勺好ましい金属化合物は、A12Q3. ZrO2゜
0r203. Geo2* 5102 + B1203
1 As203+ 5nOz +Sb203 + Ta
203 、 Y2O3,Sm2O3などであシ、4゛S
にガラス形成酸化物1例えば5iQ2. GeQ□。
The most preferred metal compound is A12Q3. ZrO2゜0r203. Geo2* 5102 + B1203
1 As203+ 5nOz +Sb203 + Ta
203, Y2O3, Sm2O3, etc., 4゛S
to a glass-forming oxide 1 such as 5iQ2. GeQ□.

A1□03などは、非晶質で網目構造をとるので遮断性
に優れ、金属記録層の酸化劣化を防ぎ、安定化に有効で
ある。これらの金属化合物は単独で用いてもよいし、ま
た2種以上組み合わせて用いてもよい0 混合層を形成する方法としては、金属と金属化合物とを
それぞれ別個の蒸着用ボートあるいはエレクトロンビー
ム蒸着るつぼに置き、共蒸着させるか交互に蒸着させる
方法、また金属と金属化合物との混合ペレットを用いて
抵抗加熱方式、コレクトロンビーム蒸着方式、イオンブ
レーティング方式など公知の薄膜形成方式による方法な
どを用いることができる。これらのうち、真空蒸着方式
が容易にこの目的を達成できるので有利であシ、10=
 Torr以下の高真空中において、安定な混合層を得
ることができる。
Since A1□03 and the like are amorphous and have a network structure, they have excellent blocking properties and are effective in preventing oxidative deterioration of the metal recording layer and stabilizing it. These metal compounds may be used alone or in combination of two or more types.A method for forming a mixed layer is to separate the metal and metal compound in separate evaporation boats or electron beam evaporation crucibles. A method of co-evaporating or alternately depositing the metal and a metal compound, or a method using a known thin film forming method such as a resistance heating method, a collectron beam evaporation method, an ion blating method, etc. using a mixed pellet of metal and a metal compound is used. be able to. Among these, the vacuum deposition method is advantageous because it can easily achieve this purpose, and 10=
A stable mixed layer can be obtained in a high vacuum of Torr or less.

この混合層の厚さは、50〜1aaoa;、、好ましく
は100〜800又の範囲であシ、混合層中に金属微粒
子の占める平均的な体積率すなわち充てん率は、金属化
合物のみも含み混合層全体の0〜80%(0係を含む)
、好ましくは、10〜60係の範囲である。
The thickness of this mixed layer is in the range of 50 to 1 aaoa, preferably 100 to 800. 0 to 80% of the entire layer (including section 0)
, preferably in the range of 10 to 60.

この混合層の構造として、基板と平行な面内すなわち、
レーザー光に対する場所による特性むらを生じさせない
ためには、基板と平行な面内における充てん率は一様と
する必要がある。また基板と垂直方向に対しては、安定
性の点から充てん率を不均質にすることが好ましく、局
部的な充てん率をQ〜?(110%の間のいかなる値と
してもより。
As for the structure of this mixed layer, in the plane parallel to the substrate, that is,
In order to prevent unevenness in the characteristics of the laser beam depending on the location, the filling ratio in a plane parallel to the substrate needs to be uniform. In addition, in the direction perpendicular to the substrate, it is preferable to make the filling rate non-uniform from the viewpoint of stability, and the local filling rate is Q~? (As any value between 110%.

その場合においても混合層全体としての平均の充てん率
は前記の値の範囲内に納めることが好ましい。
Even in that case, it is preferable that the average filling rate of the entire mixed layer falls within the above range.

本発明の記録用部材における金属記録層を構成する金属
としては、記録材料としてすでに知られているすべての
金属を用いることができるが、感度、S/N比の点で優
れた金属としては、ni、sb。
As the metal constituting the metal recording layer in the recording member of the present invention, all metals already known as recording materials can be used, but metals that are excellent in sensitivity and S/N ratio include: ni, sb.

Sn 、 Zn 、In 、 Pb 、 Au 、 G
e 、 Tl 、 cd 、 As 。
Sn, Zn, In, Pb, Au, G
e, Tl, cd, As.

Se 、 Te及びこれらの組合せなどが好ましく用い
られる。その中でも、sb 、又はSnを添加したBi
金合金感度が高く、高いS/N比をもつため特に好まし
い。
Se, Te, and combinations thereof are preferably used. Among them, sb or Sn-added Bi
Gold alloys are particularly preferred because they have high sensitivity and a high S/N ratio.

本発明において、金属記録層は、単一層であっても、複
数層であってもよい。特に2種以上の金属を組み合わせ
て用いる場合には、2種以上の金属の合金から成る単一
層であっても、数種類の単一金属層が積層された複数層
であってもよい。また、記録された情報の孔形状を特に
乱れのないものとするためには、数種類の単一金属層を
積層したものが好ましい。
In the present invention, the metal recording layer may be a single layer or may be a plurality of layers. In particular, when two or more types of metals are used in combination, it may be a single layer made of an alloy of two or more types of metals, or a plurality of layers in which several types of single metal layers are laminated. Furthermore, in order to ensure that the hole shape of the recorded information is not particularly disturbed, it is preferable that several types of single metal layers are laminated.

該金属記録層には、本発明の目的を損わない限シ用いた
金属の酸化物、特に低級酸化物を少111含んでいても
よい。
The metal recording layer may contain a small amount of a metal oxide, particularly a lower oxide, as long as it does not impair the object of the present invention.

この金属記録層は、真空蒸着法、スパッタリング法、イ
オンブレーティング法、電気めっき法、無電解めっき法
、プラズマ蒸着法などの薄膜形成技術によって形成する
ことができる。
This metal recording layer can be formed by a thin film forming technique such as a vacuum evaporation method, a sputtering method, an ion blating method, an electroplating method, an electroless plating method, or a plasma evaporation method.

これらの金属記録層の形成方法のうち、真空蒸着法が簡
単でかつ再現性がよいので好ましく、金属記録層の高温
高湿下での安定性及び感度の点がら、高真空下、特に1
0−5Torr以下での蒸着が好ましい。この金属記録
層の膜厚は、用途に応じて決められるが、100〜50
00穴、特に150〜400Xの範囲が好ましい。
Among these methods for forming the metal recording layer, the vacuum evaporation method is preferred because it is simple and has good reproducibility.
Vapor deposition at 0-5 Torr or less is preferred. The thickness of this metal recording layer is determined depending on the application, but is 100 to 50 mm thick.
00 holes, particularly in the range of 150 to 400X.

本発明の記録用部材において、前記金属記録層の上層に
設ける金属化合物安定化層には、例えばBe 、 Li
 、 B 、 Mg 、 Aj7 、 Si 、 Ca
 、 sc 、 Ti 。
In the recording member of the present invention, the metal compound stabilizing layer provided above the metal recording layer contains, for example, Be, Li, etc.
, B, Mg, Aj7, Si, Ca
, sc, Ti.

V 、 Or 、 Mn 、 Fe 、 Co 、 N
i 、 (jl 、 Zn 、 Ga 。
V, Or, Mn, Fe, Co, N
i, (jl, Zn, Ga.

GO,As 、 Sr 、 Y 、 Zr 、 Nb 
、 Tc 、 Ru 、 Rh 。
GO, As, Sr, Y, Zr, Nb
, Tc, Ru, Rh.

Ag 、 ■n 、 Sn 、 Eib 、 Ba 、
 La 、Hf 、 Ta 、 Re。
Ag, ■n, Sn, Eib, Ba,
La, Hf, Ta, Re.

■r 、 Tl 、 Pb 、 Bi 、 Dy 、 
Er 、 Gd 、 Nd 、 Pr。
■r, Tl, Pb, Bi, Dy,
Er, Gd, Nd, Pr.

Oe 、 Pm 、 Tb 、 Ho 、 Tm 、 
Yb 、 Lu 、 Srnなどの金属の酸化物、窒化
物、フッ化物、特にSj、。
Oe, Pm, Tb, Ho, Tm,
Oxides, nitrides, and fluorides of metals such as Yb, Lu, and Srn, especially Sj.

Al 、 Ge 、 Sb 、 Zr 、 Bi 、 
Zn 、 Li 、 Mg、 、 Ti。
Al, Ge, Sb, Zr, Bi,
Zn, Li, Mg, Ti.

La 、 Os 、 Y 、 Dy 、 Er 、 G
d 、 Hf 、 Sm、 Or 。
La, Os, Y, Dy, Er, G
d, Hf, Sm, Or.

Nd、 Pr 、 Pm 、 Eu 、 Tb 、 n
o 、 Tm 、 Tb 、 Luなとの金属の酸化物
が好ましく用いられる。
Nd, Pr, Pm, Eu, Tb, n
Oxides of metals such as o, Tm, Tb, and Lu are preferably used.

これらの金属化合物の2種類以上を用いて、異種金属化
合物の二層(構造にすることが、情報記録として形成さ
れる孔の形状を整え、その安定性を図るうえで好ましい
It is preferable to use two or more types of these metal compounds to form a two-layer structure of different metal compounds in order to adjust the shape of the pores formed as information recording and to ensure their stability.

金属化合物安定化層を形成する方法としては、真空蒸着
法、スパッタリング法、イオンブレーティング法、プラ
ズマ蒸着法などの薄膜形成技術を適用することができる
。また、異なる単一金属から成るターゲットの複数個や
、2種以上の金属を含むターゲットを用い、空気、酸素
、酸素−アルゴンなどの気体による反応性スパッタリン
グによっても形成することができる。
As a method for forming the metal compound stabilizing layer, a thin film forming technique such as a vacuum deposition method, a sputtering method, an ion blasting method, or a plasma deposition method can be applied. It can also be formed by reactive sputtering using a gas such as air, oxygen, or oxygen-argon, using a plurality of targets made of different single metals or a target containing two or more types of metals.

該金属化合物安定化層の膜厚は、用いる化合物の種類に
もよるが、厚すぎるとクランクやしわの発生を促すので
、1ooooX以下、特に20〜300Xの範囲が好ま
しい。
The thickness of the metal compound stabilizing layer depends on the type of compound used, but if it is too thick, it will promote the occurrence of cranks and wrinkles, so it is preferably 100X or less, particularly in the range of 20 to 300X.

本発明の記録用部材において、前記金属化合物安定化層
の上層に設けた保護層を構成する無機物質としては、タ
ンタルの酸化物、フッ化物又は窒化物などを挙げること
ができる。これらは単独で用いてもよいし、混合物とし
て用いてもよい。40゛にタンタルの酸化物が好ましく
用いられる。
In the recording member of the present invention, examples of the inorganic substance constituting the protective layer provided on the metal compound stabilizing layer include tantalum oxide, fluoride, or nitride. These may be used alone or as a mixture. For 40°, tantalum oxide is preferably used.

前記クンタル化合物から成る無機保護層を形成する方法
としては、真空蒸着法、スパッタリング法、イオンブレ
ーティング法、プラズマ蒸着法などの薄膜形成技術を適
用することができる。また、タンタルから成るターゲッ
トを用い、空気、酸素、窒素、酸素−アルゴンなどの気
体による反応性スパッタリングによっても形成すること
ができる。
As a method for forming the inorganic protective layer made of the Kuntal compound, thin film forming techniques such as vacuum evaporation, sputtering, ion blasting, and plasma evaporation can be applied. It can also be formed by reactive sputtering using a gas such as air, oxygen, nitrogen, or oxygen-argon using a target made of tantalum.

該タンタル化合物の無機保護層の膜厚は、50〜500
八、好ましくは100〜aOO久の範囲である。
The thickness of the inorganic protective layer of the tantalum compound is 50 to 500 mm.
8, preferably in the range of 100 to aOO.

また、保護層を構成する有機物質としては、フッ素系ポ
リマーを挙げることができ、このものは単独又は混合物
として用いられる。特に好ましいものはテフロン(商品
名)である。
Further, examples of the organic substance constituting the protective layer include fluorine-based polymers, which may be used alone or as a mixture. Particularly preferred is Teflon (trade name).

このフッ素系ポリマーの杓機保護層を形成する方法とし
ては、真空蒸着法、スパッタリング法、エレクトロンビ
ーム蒸着法、プラズマ重合法などの薄膜形成技術を適用
することができる。また、フッ素系ポリマーを適当な溶
媒に溶解して塗布するか、あるいは薄いフィルムとして
ラミネートするなどの方法により形成することができる
。特に本目的に対しては、真空蒸着法が好ましい。
As a method for forming the fluoropolymer ladle protective layer, thin film forming techniques such as vacuum evaporation, sputtering, electron beam evaporation, and plasma polymerization can be applied. Further, it can be formed by dissolving the fluorine-based polymer in a suitable solvent and applying it, or by laminating it as a thin film. Particularly for this purpose, vacuum evaporation is preferred.

フッ素系ポリマーから成る有機保護層の膜厚は、100
〜500久、好ましくは150〜300Xの範囲である
The thickness of the organic protective layer made of fluoropolymer is 100
-500X, preferably 150-300X.

本発明の記録用部材における好ましい411¥造として
は、第5図に示すように、金属化合物と金属とから成る
混合層と金属記録層との間に金属化合物層を設けた4:
、lIH造が誉げられる。この金属化合物層については
、前記の金属化合物安定化層と同様な材料、形成法及び
膜厚が採用される。
As shown in FIG. 5, a preferable recording member of the present invention has a metal compound layer between a mixed layer of a metal compound and a metal and a metal recording layer.
, lIH construction is praised. For this metal compound layer, the same material, formation method, and film thickness as the metal compound stabilizing layer described above are employed.

さらに好ましい構造としては、第7図に示すように、金
属記録層と基板との間に、基板側から順次クロム層及び
金属化合物層を設けた構造が挙げられる。
A more preferable structure is one in which a chromium layer and a metal compound layer are sequentially provided between the metal recording layer and the substrate from the substrate side, as shown in FIG.

クロム層の形成法としては、例えば真空蒸着法、スパッ
タリング法、イオンブレーティング法、電気めっき法、
無電解めっき法、プラズマ蒸着法などの薄膜形成技術を
適用することができる。
Examples of methods for forming the chromium layer include vacuum evaporation, sputtering, ion blasting, electroplating,
Thin film forming techniques such as electroless plating and plasma deposition can be applied.

前記クロム層の形成方法のうち、真空蒸着法が簡単でか
つ再現性がよいので好ましいが、高温高湿下での安定性
の点から、高真空下、特に1O−5Torr以下での蒸
着がより好ましい。また、該クロム層には、本発明の目
的を損わない限シ、用いたクロムの酸化物、特に低級酸
化物を少量含んでいてもよい。
Among the methods for forming the chromium layer, vacuum deposition is preferred because it is simple and has good reproducibility, but from the viewpoint of stability under high temperature and high humidity, deposition under high vacuum, especially at 1O-5 Torr or less, is more preferable. preferable. Further, the chromium layer may contain a small amount of the chromium oxide, particularly a lower oxide, as long as it does not impair the purpose of the present invention.

このクロム層の膜厚は、30λ−より大きく200λ以
下、好ましくは40〜s o p−の範囲である。
The thickness of this chromium layer is greater than 30λ and less than 200λ, preferably in the range of 40 to sop.

本発明の↑111報記録用部材においては、金属化合物
安定化層の上1+仙二保護層を設けているために、中空
サンドウィンチ構造において、ビット形成時に対向する
而が接触しても、該金属化合物安定化層の剥れは生ぜず
、記録特性及び安定性が良好であって、C/N比もほと
んど低下しない。
In the ↑111 report recording member of the present invention, since the metal compound stabilizing layer is provided with the protective layer 1 and 2, even if opposing parts come into contact during bit formation in the hollow sand winch structure, the The metal compound stabilizing layer does not peel off, the recording characteristics and stability are good, and the C/N ratio hardly decreases.

次に実施例によって本発明をさらに詳細に説明する。Next, the present invention will be explained in more detail with reference to Examples.

なお、各側における充てん率とは、混合層(全体を1と
する)中で金属微粒子の占める体積の割合を意味する。
Note that the filling ratio on each side means the proportion of the volume occupied by the metal fine particles in the mixed layer (the entire layer is taken as 1).

実施例1 キャスト法によって作成した表向平滑性のよい厚さ1.
211Jのポリメチルメタクリレート(PMMA)の板
を直径30 C〃lのディスクに加工し、真空蒸着機槽
内にセットする。
Example 1 Thickness with good surface smoothness created by casting method 1.
A 211J polymethyl methacrylate (PMMA) plate was processed into a 30 Cliter diameter disk and set in a vacuum evaporator tank.

ディスクは、装置の中央において回転できるようになっ
ている。装置内には、回転軸を中心として6個の加熱蒸
着ボートと5個のるつばをもつ電子ビーム装置を備えて
いる。
The disk is rotatable in the center of the device. The device is equipped with an electron beam device having six heated evaporation boats and five crucibles centered around a rotating shaft.

この6個の加熱ボートに、それぞれ13i 、 Sb。13i and Sb were placed in each of these six heating boats.

Crを入れ、電子ビーム装置の6個のるつぼに、”12
03 1 Y2 o31 Ta2o5をそれぞれ入Jし
た。装置内を3 X 10””’ Torrの真空度と
したのち、基板回転速度を1oarp’mとし、まずA
12o3とOrを同時蒸着法により一様な混合膜を形成
するように蒸着させ、膜厚120久、充てん率0.5の
混合層を形成させた。
Put Cr into the six crucibles of the electron beam device, and place “12
03 1 Y2 o31 Ta2o5 were added respectively. After setting the inside of the apparatus to a vacuum level of 3 x 10'''' Torr, the substrate rotation speed was set to 1 oarp'm, and first, A
12O3 and Or were vapor-deposited to form a uniform mixed film by simultaneous vapor deposition to form a mixed layer with a film thickness of 120 mm and a filling ratio of 0.5.

次に、金属化合物層として、Y2O3を60λ、金属記
録層として、sbを原子比で20 atm%含自するよ
うにSb 、 BiO順で膜厚にしてIOA、金属化合
物安定化層として、Y2O3を601、そして保護層と
して、Ta205を120X1順次積層したサンプルを
作成した。
Next, Y2O3 was used as the metal compound layer at 60λ, IOA was used as the metal recording layer in the order of Sb and BiO so that the atomic ratio of sb was 20 atm%, and Y2O3 was used as the metal compound stabilization layer. 601 and Ta205 were sequentially laminated in a 120×1 layer as a protective layer.

比較例として、保護層のTa205を0λとした他は、
実施例1と同構造のサンプル(比較例1)及び保護層の
Ta2Q5を600Xとした他は、実施例1と同構造の
サンプル(比較例2)を作成した。
As a comparative example, except that Ta205 of the protective layer was set to 0λ,
A sample with the same structure as in Example 1 (Comparative Example 1) and a sample with the same structure as in Example 1 (Comparative Example 2) were prepared, except that the Ta2Q5 of the protective layer was changed to 600X.

膜厚のモニターは水晶振動子法で行い、順次自動的にプ
ログラムされた順序でコントロールを行い、蒸着は2分
以内にすべて終了する。基板の意図的加熱は行っておら
ず、蒸着(二よる基板温度の上昇もほとんどなかった。
The film thickness is monitored using a crystal oscillator method and controlled automatically in a programmed sequence, and the entire deposition process is completed within 2 minutes. No intentional heating of the substrate was performed, and there was almost no rise in substrate temperature due to vapor deposition.

このように作成した記録用材料の評価として、第8図の
ような接触用治具を用い、接触荷重と剥離発生の有無の
確認を行った。また、このように作成した記録用材料の
評価を行うために、発振波長840111Mの半導体レ
ーザーの光を厚さ1.2跋のPMMA基板越しに記録面
上にレンズでビーム径1μmまで集光させ、ディスクを
600 rpmの速度で回転させながら周波数1.05
MHz 、デエーティー比1対1の475nBθCのパ
ルス巾に変調したレーザー光で記録を行った。なお、レ
ーザー光の照射は基板の反対側から行った。レーザー光
の照射された部分には、長円形の孔ができ、その短径は
ほぼ1μmであった。
In order to evaluate the recording material produced in this manner, a contact jig as shown in FIG. 8 was used to check the contact load and the presence or absence of peeling. In addition, in order to evaluate the recording material prepared in this way, the light of a semiconductor laser with an oscillation wavelength of 840111M was focused onto the recording surface through a PMMA substrate with a thickness of 1.2 mm using a lens to a beam diameter of 1 μm. , with a frequency of 1.05 while rotating the disk at a speed of 600 rpm.
Recording was performed using a laser beam modulated to a pulse width of 475 nBθC with a DAT ratio of 1:1. Note that the laser light irradiation was performed from the opposite side of the substrate. An oblong hole was formed in the area irradiated with the laser beam, and the short diameter of the hole was approximately 1 μm.

そして、接触前後の実用記録値で記録した信号について
、再生信号のC/N比をスペクトルアナライザーで測定
も行った。
The C/N ratio of the reproduced signal was also measured using a spectrum analyzer for the signals recorded at the practical record values before and after contact.

なお、これらのサンプルの構造及び評価結果を第1表に
示す。
The structures and evaluation results of these samples are shown in Table 1.

これらのサンプルを前記方法で評価したところ、実施例
1は、接触荷重5.0kgでも剥離は発生せず、また、
再住信号の甲虫比は、接触前53dB、接触後52dB
 とほとんど低下は見られなかった。
When these samples were evaluated using the method described above, in Example 1, no peeling occurred even at a contact load of 5.0 kg, and
The beetle ratio of the repopulation signal is 53 dB before contact and 52 dB after contact.
Almost no decline was observed.

次に比較例1は、接触荷重1.0kgでハガレが発生し
、再生信号のC/N比は、接触前52dB、接触後47
 dBと50の低下が見られた。
Next, in Comparative Example 1, peeling occurred at a contact load of 1.0 kg, and the C/N ratio of the reproduced signal was 52 dB before contact and 47 dB after contact.
A decrease of 50 dB was observed.

一方、比較例2は、保護層が厚すぎるために、記録でき
ないため、剥離発生の有無の確認もできなかった。
On the other hand, in Comparative Example 2, since the protective layer was too thick, recording was not possible, and it was not possible to confirm whether peeling occurred.

実施例2〜4 保護層のTa205の膜厚を変化させた他は、実施例1
と同構造のサンプルを作成した。
Examples 2 to 4 Example 1 except that the thickness of Ta205 in the protective layer was changed.
I created a sample with the same structure.

すなわち、実施例1と同様の基板上に、実施例1と同様
な方法を用いて、保護層のTa2o5が70λ(実施例
2)、200X(実施例3)、27OA”(実施例4)
の各サンプルを作成した。
That is, on the same substrate as in Example 1, using the same method as in Example 1, the protective layer with Ta2O5 of 70λ (Example 2), 200X (Example 3), and 27OA'' (Example 4) was formed.
Each sample was created.

この各サンプルを実施例1と同様な方法で評価を行った
。その結果なaS1表に示す。
Each sample was evaluated in the same manner as in Example 1. The results are shown in Table aS1.

実施例2は、接触荷重2.0kgでハガレが発生し、再
生信号のCA比は、接触前51aB、接触後48dBと
3dBの低下が見られた。
In Example 2, peeling occurred at a contact load of 2.0 kg, and the CA ratio of the reproduced signal was 51 aB before contact and 48 dB after contact, a decrease of 3 dB.

実施例6は、接触荷重5.OkQでも剥離が発生せず、
また再生信号のCハ比は、接触前52dB、Ji触後後
52 dBと低下は見られなかった。
In Example 6, contact load 5. No peeling occurs even with OkQ,
Furthermore, the C/C ratio of the reproduced signal was 52 dB before contact and 52 dB after Ji contact, with no decrease observed.

実施例4は、接触荷重5.0kgでも剥離が発生せず、
また再生信号のC/N比は、接触前52dB。
In Example 4, no peeling occurred even under a contact load of 5.0 kg.
The C/N ratio of the reproduced signal was 52 dB before contact.

接触後524Bと低下は見られなかった。After contact, it reached 524B and no decrease was observed.

実施例5 蒸着機槽内の3個の加熱ボートに、それぞれB15b 
、テフロンを入れ、電子ビーム蒸着装置の2個のるつぼ
に、Or 、 Sm2O3を入れ実施例1と同様に、P
MMA O)ディスク上に5 X 10−’ Torr
 (7)真空度において蒸着を行った。
Example 5 B15b was placed in each of the three heating boats in the vapor deposition machine tank.
, Teflon, and Or and Sm2O3 were placed in two crucibles of an electron beam evaporation apparatus in the same manner as in Example 1.
MMA O) 5 X 10-' Torr on the disk
(7) Vapor deposition was performed in a vacuum.

蒸着順序としては、まず金属層としてOrを60スの膜
厚に蒸着形成し、次に金属化合物層として、Sm2O3
を60k、金属記録層として、sb を原子比で20 
atm%含有するようにSl) 、 Biの順で膜厚に
して600X、金属化合物安定化層として、Sm2O3
を60A1保護層としてテフロンを18OA。
The deposition order was as follows: first, Or was deposited as a metal layer to a thickness of 60 μm, and then Sm2O3 was deposited as a metal compound layer.
is 60K, as a metal recording layer, and sb is 20 in atomic ratio.
The film thickness was 600X in the order of Sl) and Bi to contain atm%, and Sm2O3 as a metal compound stabilizing layer.
60A1 protective layer and Teflon 18OA.

順次積層したサンプル°を作成した。。Samples were prepared by sequentially stacking layers. .

比較例として、保護層のテフロンな0久とした他は、実
施例5と同構造の比較例3のサンプル及び保護層のテフ
ロンを600Xとした他は、実施例5と同構造の比較例
4のサンプルを作成した。
As comparative examples, samples of Comparative Example 3 had the same structure as Example 5 except that the protective layer was made of Teflon of 600X, and Comparative Example 4 had the same structure as Example 5 except that the protective layer of Teflon was 600X. I created a sample.

実施例5、比較例3及び比較例4を実施例1と同様な方
法で評価を行った。
Example 5, Comparative Example 3, and Comparative Example 4 were evaluated in the same manner as in Example 1.

なお、前記サンプルの構造及び評価結果を第1表に示す
The structure and evaluation results of the sample are shown in Table 1.

実施例5は、接触荷重5.0kgでも剥離が発生せず、
また、再生信号のC7N比は、接触前54dB。
In Example 5, no peeling occurred even under a contact load of 5.0 kg.
Furthermore, the C7N ratio of the reproduced signal was 54 dB before contact.

接触後54 dBと低下は見られなかった。After contact, it was 54 dB and no decrease was observed.

次に比較例3は、接触荷重1.0kgで剥離が発生し、
再生信号のリヘ比は、接触前54aB、接触後49dB
と5 aBの低下が見られた。
Next, in Comparative Example 3, peeling occurred at a contact load of 1.0 kg,
The regeneration ratio of the reproduced signal is 54aB before contact and 49dB after contact.
A decrease in 5 aB was observed.

一方、比較例4は、保護層が厚すぎるために、記録でき
ないため、剥離発生の有無の確認もできなかった。
On the other hand, in Comparative Example 4, since the protective layer was too thick, it was impossible to record, and therefore it was not possible to confirm whether or not peeling occurred.

実施例6〜8 保護層のテフロンの膜厚を変化させた他は、実施例5と
同構造のサンプルを作成した。
Examples 6 to 8 Samples having the same structure as Example 5 were created except that the thickness of the Teflon layer of the protective layer was changed.

すなわち、実施例5と同様の基板上に、実施例5と同様
な方法を用いて、保護層のテフロンが120″A(実施
例6)、220久(実施例1)、270X(実施例8)
の各サンプルを作成した。
That is, on the same substrate as in Example 5, using the same method as in Example 5, the protective layer of Teflon was 120"A (Example 6), 220"A (Example 1), and 270X (Example 8). )
Each sample was created.

この各サンプルを実施例1と同様な方法で評価を行った
。その結果を第1表に示す。
Each sample was evaluated in the same manner as in Example 1. The results are shown in Table 1.

実施例6は、接触荷]E3.Okgで剥ujff、が発
生し、再生信号のC7N比は、接触前55 dB、接触
後52dBと3 dBの低下が見られた。
In Example 6, contact load] E3. Peeling ujff occurred in Okg, and the C7N ratio of the reproduced signal was 55 dB before contact and 52 dB after contact, a decrease of 3 dB.

実施例7は、接触荷重5.[1kgでも剥離が発生せず
、また再生信号のC/N比は、接触前54aB。
In Example 7, contact load 5. [No peeling occurred even at 1 kg, and the C/N ratio of the reproduced signal was 54aB before contact.

接触後54 dBと低下は見られなかった。After contact, it was 54 dB and no decrease was observed.

実施例8は、接触荷M5.Okgでも剥離が発生せず、
また再生信号のり1比は、接触前55dB、接触後55
dBと低下は見られなかった。
Example 8 is a contact load M5. No peeling occurs even with Okg.
Also, the playback signal ratio is 55 dB before contact and 55 dB after contact.
dB and no decrease was observed.

なお、接触荷、!J工1.0kgは、指で接触させた時
の力に相当する。
In addition, contact cargo! 1.0 kg of J-force corresponds to the force when touching with a finger.

【図面の簡単な説明】[Brief explanation of the drawing]

第11xlはピット形成後の情報記録用部材の断面図、
第2図及び第6図は中空サンドウィッチ1jlj造の情
報記録用部材の断面図、第4図、第5図、第6図及び第
7図は本発明の情報記録用部材におけるそれぞれ異った
例の断面図、第8図は情報記録用部材を評価するだめの
接触用治具の断面略解図である。 図中符シシ1は基板、2は金属化合物と金属とから成る
混合層、3はクロム層、4は金属化合物層、5は金属記
録層、6は金属化合物安定化層、7は保獲層、8は金属
記録層と基板との間に形成させる層、9は感材層、10
はスペーサー、11は中空サンドウィッチ構造のディス
ク及び12は荷■である。 1.1許出願人 旭化成工業株式会社 代理人 同 形 明 第1図 第2図 第3図 第4図 第5図 第6図 第7図
No. 11xl is a cross-sectional view of the information recording member after pit formation;
FIGS. 2 and 6 are cross-sectional views of information recording members made of hollow sandwich structure, and FIGS. 4, 5, 6, and 7 are different examples of the information recording members of the present invention. FIG. 8 is a schematic cross-sectional view of a contact jig for evaluating an information recording member. In the figure, 1 is the substrate, 2 is a mixed layer consisting of a metal compound and metal, 3 is a chromium layer, 4 is a metal compound layer, 5 is a metal recording layer, 6 is a metal compound stabilization layer, 7 is a capture layer , 8 is a layer formed between the metal recording layer and the substrate, 9 is a sensitive material layer, 10
1 is a spacer, 11 is a hollow sandwich structure disk, and 12 is a load. 1.1 Applicant Asahi Kasei Corporation Agent Same form Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7

Claims (1)

【特許請求の範囲】 1 エネルギービームの照射によシ、ビットを形成させ
てすlソ報を記録するための、基板上に金属記録層及び
金属化合物安定化層を順次積層した構造をもつ情報記媒
体において、該金属化合物安定化層の上層に、無機物質
又は有機物質から成る保護層を設けたことを特徴とする
情報記録用部材。 2 情報記録媒体の構造が、基板上に金属記録層を設け
、この金属記録層と基板との間に金属化合物と金属とか
ら成る混合層を介在させ、かつ該金属記録層の土に金属
化合物安定化層を設けた41117造である1!l許請
求の範囲第1項記載の情報記録媒体羽。
[Claims] 1. Information having a structure in which a metal recording layer and a metal compound stabilizing layer are sequentially laminated on a substrate, for recording information by forming bits by irradiation with an energy beam. 1. An information recording member characterized in that a protective layer made of an inorganic substance or an organic substance is provided on the metal compound stabilizing layer in a recording medium. 2 The structure of the information recording medium is such that a metal recording layer is provided on a substrate, a mixed layer consisting of a metal compound and a metal is interposed between the metal recording layer and the substrate, and a metal compound is provided in the soil of the metal recording layer. 1 which is 41117 construction with a stabilizing layer! 1. An information recording medium blade according to claim 1.
JP58210378A 1983-11-09 1983-11-09 Member for recording information Pending JPS60103534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58210378A JPS60103534A (en) 1983-11-09 1983-11-09 Member for recording information

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58210378A JPS60103534A (en) 1983-11-09 1983-11-09 Member for recording information

Publications (1)

Publication Number Publication Date
JPS60103534A true JPS60103534A (en) 1985-06-07

Family

ID=16588349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58210378A Pending JPS60103534A (en) 1983-11-09 1983-11-09 Member for recording information

Country Status (1)

Country Link
JP (1) JPS60103534A (en)

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