JPS5996271A - Continuous sputtering device - Google Patents

Continuous sputtering device

Info

Publication number
JPS5996271A
JPS5996271A JP20462182A JP20462182A JPS5996271A JP S5996271 A JPS5996271 A JP S5996271A JP 20462182 A JP20462182 A JP 20462182A JP 20462182 A JP20462182 A JP 20462182A JP S5996271 A JPS5996271 A JP S5996271A
Authority
JP
Japan
Prior art keywords
substrate
chamber
sputtering
vacuum chamber
sputtering treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20462182A
Other languages
Japanese (ja)
Other versions
JPH0242900B2 (en
Inventor
Toshihiko Miyajima
俊彦 宮嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP20462182A priority Critical patent/JPS5996271A/en
Publication of JPS5996271A publication Critical patent/JPS5996271A/en
Publication of JPH0242900B2 publication Critical patent/JPH0242900B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Abstract

PURPOSE:To perform continuous sputtering treatment of substrates without contaminating the inside of a vacuum chamber while enabling monitoring of a sputtering condition in the stage of subjecting the many substrates to a sputtering treatment by using cylindrical deposition preventing shields provided with glass windows. CONSTITUTION:A sputtering treatment device is constituted of a rotating member 3 combined radially with four pieces of cylindrical deposition preventing shields 2 each provided with a glass window 15 in a vacuum chamber 1. A substrate 4 to be sputtered is introduced through a pressure regulation chamber 8A into the part A in the chamber 1, where the substrate is held by a substrate holder 12. Gaseous Ar 10 is introduced from the central part in the chamber 1 and the substrate is subjected to ion cleaning by a reverse sputtering treatment in the position A and thereafter the member 3 is rotated by 90 deg. to the position B where the substrate 4 is subjected to a sputtering treatment. The member 3 is rotated 90 deg. in succession to the position C from which the substrate is removed through a pressure regulation chamber 8B. Since the sputtering treatment is performed by the shields 2 provided with the windows, the continuous sputtering treatment is accomplished without contaminating the inside wall of the chamber 1 while the sputtering condition is monitored.

Description

【発明の詳細な説明】 本発明は、サブストレート(基板)を連続的にスパッタ
処理することが可能な連続式スパッタ装置に係り、特に
エアーツーエアー(A ir  to ’ A ir)
式のスパッタ装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a continuous sputtering apparatus capable of continuously sputtering a substrate, and particularly to an air-to-air sputtering apparatus.
This invention relates to a type of sputtering apparatus.

現在、真空蒸着法、イオンブレーティング法、−スパッ
タリング法等の蒸着装置の問題点として、真空チャンバ
ー内か非常に汚れるということがあげられる。とくに、
スパッタ装置においてはターケ゛ツトよりたたと出され
た付着原子が無指向性であるため、このチャンバー内の
汚れは特に犬とくなるbらいがある。また、従来連続式
スパッタ装置に防着シールドを使用しているものもある
が、その防府シールドを取り付けてもその部分は良いか
シールドされない池の部分はやはり汚れてしまう。さら
に、防着シールドは通常金属製であるため、内部の又バ
ッタの状態を見ることができず不便である。
At present, a problem with vapor deposition apparatuses such as vacuum vapor deposition, ion blating, and -sputtering is that the inside of the vacuum chamber becomes extremely dirty. especially,
In a sputtering apparatus, since the attached atoms ejected from the target are non-directional, the inside of the chamber tends to become particularly dirty. Additionally, some conventional continuous sputtering devices use anti-fouling shields, but even if the Hofu shield is attached, that part is fine, but the part of the pond that is not shielded will still get dirty. Furthermore, since the anti-fouling shield is usually made of metal, it is inconvenient that the condition of the locusts inside cannot be seen.

本発明は、上記の点に鑑み、一部にガラス窓を形成した
円筒型防着シールドでスパッタ処理を行うjiVJ成と
することにより真空室内の汚れを防止しかつ内部のスパ
ッタ状態を監視可能にするとともに、該円筒型防着シー
ルドを複数個組合せて回転させる構造としてサブストレ
ートを移送する機能を持たせることにより、サブストレ
ートを連続的にスパッタ処理することが可能な連続式ス
パッタ装置を提供しようとするものである。
In view of the above points, the present invention uses a jiVJ configuration in which sputtering is performed using a cylindrical anti-adhesion shield partially formed with a glass window, thereby preventing contamination in the vacuum chamber and making it possible to monitor the internal sputtering state. In addition, the present invention provides a continuous sputtering apparatus capable of continuously sputtering a substrate by having a structure in which a plurality of the cylindrical anti-adhesive shields are combined and rotated to have a function of transferring the substrate. That is.

以下、本発明に係る連続式スパッタ装置の実施例を図面
に従って説明する。
Embodiments of a continuous sputtering apparatus according to the present invention will be described below with reference to the drawings.

第1図は連続式スパッタ装置の全体的構成を、第2図は
その場合に使用する円筒型防着シールドの構成をそれぞ
れ示すものである。これらの図において、真空チャンバ
ー1内には円筒型防着シールド2を放射状に4個組合せ
た回転部利3が回転自在に配置されている。この真空チ
ャンバー1の一方の側面にはサブストレート4を搬入す
るための搬入路5が連結され、同じ側面にサブストレー
ト4を搬出する搬出路6が連結されている。そして、搬
入路5の途中はシャツタフにより圧力調整室8Aが区画
され、搬出路6にはシャッタ9により圧力調整室8Bが
区画される。ここで、面圧力調整室8 A、、 8 B
は真空チャンバー1の一方の側面側に位置し、なるべく
設置場所をとらないようにしている。真空チャンバー1
及び圧力調整室8A、8Bはそれぞれ独立した真空1ト
気系により真空吸引されるようになっている。前記真空
チャンバー1の中心部にはアルゴン等の不活性気体を吹
出す導入口10が設けられている。そして、各円筒型防
着シールド2の導入口10に近い方の端部に所要の薄膜
を形成するための金属原子を放出するターデッド11が
それぞれ配置され、他端部にはサブストレートホルダ1
2がそれぞれ設けられる。このサブストレートホルダ1
2は真空チャンバー1内に搬入されてきたサブストレー
ト4を保持する低能を有するものである。なお、円部型
防着シールド2の材質としてはステンレス等が好ましい
。ただし、円部型防着シールド2の全周をステンレスで
構成したのでは内部が見えないため、一部に硬質ガラス
によるガラス窓15を形成しておく。
FIG. 1 shows the overall structure of a continuous sputtering apparatus, and FIG. 2 shows the structure of a cylindrical anti-adhesion shield used in that case. In these figures, in a vacuum chamber 1, a rotary part 3, which is a combination of four cylindrical anti-adhesion shields 2 arranged in a radial manner, is rotatably arranged. A carry-in path 5 for carrying in the substrate 4 is connected to one side of the vacuum chamber 1, and a carry-in path 6 for carrying the substrate 4 out is connected to the same side. A pressure adjustment chamber 8A is defined in the middle of the carry-in path 5 by a shirt tough, and a pressure control chamber 8B is defined in the carry-out path 6 by a shutter 9. Here, surface pressure adjustment chambers 8A, 8B
is located on one side of the vacuum chamber 1 so as to take up as little space as possible. vacuum chamber 1
The pressure adjustment chambers 8A and 8B are each vacuum-suctioned by an independent vacuum system. An inlet 10 for blowing out an inert gas such as argon is provided in the center of the vacuum chamber 1. Then, at the end of each cylindrical anti-adhesion shield 2 near the inlet 10, a tarded 11 for emitting metal atoms for forming a desired thin film is arranged, and at the other end, a substrate holder 1 is placed.
2 are provided respectively. This substrate holder 1
2 has a low ability to hold the substrate 4 carried into the vacuum chamber 1. The material of the circular anti-adhesion shield 2 is preferably stainless steel or the like. However, if the entire circumference of the circular anti-adhesive shield 2 is made of stainless steel, the inside cannot be seen, so a glass window 15 made of hard glass is formed in a portion.

以上の構成において、大気中より圧力調整室8A内に供
給されたサブストレート4は、圧力調整室8A内が真空
チャンバー1と同程度の高真空状態となった後、シャツ
タフの開閉動作により真空チャンバ′−1内にJll>
入され、まず位置Aにある円筒型防着シールド2のサブ
ストレートホルダ12で保持される。この位置Aではタ
ーゲット11がアースでサブストレートホルダ12がマ
イナスとなる電圧関係となる。この結果、逆スパツタ処
理によるサブストレートのイオンクリーニングが行われ
る。その後、回転部材3は90度回転しこれに伴いサブ
ストレート4も位置Bに来る。この位置Bにおいてはタ
ーゲット11がマイナス、サブスルレートホルダ12が
アースという電圧関係どなり通常のスパッタ処理が行わ
れる。スパッタ処理後のサブストレート4は回転部材3
のさらに90度の回転により位置Cの排出位置に移送さ
れる。
In the above configuration, the substrate 4 supplied from the atmosphere into the pressure adjustment chamber 8A is moved into the vacuum chamber by the opening/closing operation of the shirt tough after the pressure adjustment chamber 8A reaches a high vacuum state comparable to that of the vacuum chamber 1. Jll in '-1>
The substrate is first held by the substrate holder 12 of the cylindrical anti-corrosion shield 2 at position A. At this position A, the voltage relationship is such that the target 11 is grounded and the substrate holder 12 is negative. As a result, ion cleaning of the substrate is performed by reverse sputtering. Thereafter, the rotating member 3 rotates 90 degrees, and the substrate 4 also comes to position B accordingly. At this position B, the target 11 is in a negative voltage state and the subsullate holder 12 is in a grounded state, so that normal sputtering processing is performed. The substrate 4 after sputtering is the rotating member 3
is transferred to the discharge position at position C by a further rotation of 90 degrees.

ここで、サブストレート4はサブストレートホルダ12
よりはずされ、真空チャンバー1と同程度に高真空に設
定された圧力調整室8B内にシャッタ9の開閉により移
送され、さらにここから大気中に取り出される。このよ
うな動作が連続的に順次行われる。
Here, the substrate 4 is attached to the substrate holder 12.
By opening and closing the shutter 9, it is transferred into a pressure adjustment chamber 8B set to a high vacuum similar to that of the vacuum chamber 1, and then taken out into the atmosphere from there. Such operations are performed continuously and sequentially.

上記実施例によれば次のような効果をあげることができ
る。
According to the above embodiment, the following effects can be achieved.

(1)円筒型防着シールド2の一端にターゲット11を
、他端にサブストレートホルダ12を配置し、この円筒
型防着シールド2内にてスパッタ処理を実行するので、
真空チャンバー1にスパッタの原子が付着し汚れる不都
合を防止で終る。
(1) Since the target 11 is placed at one end of the cylindrical adhesion prevention shield 2 and the substrate holder 12 is placed at the other end, and the sputtering process is performed within this cylindrical adhesion prevention shield 2,
This is achieved by preventing the inconvenience of sputtered atoms adhering to the vacuum chamber 1 and contaminating it.

(2)円筒型防着シールド2を複数個放射状に組み合せ
て回転部材としたので、サブストレート4を順次回転し
て移送することができ、サブストレート4の連続的なス
パッタ処理が可能である。
(2) Since a plurality of cylindrical anti-adhesion shields 2 are combined radially to form a rotating member, the substrates 4 can be sequentially rotated and transferred, allowing continuous sputtering of the substrates 4.

(3)円部型防着シールド2の周面の一部にガラス窓1
5を設けたので内部のスパッタ状態を監視するのに好都
合である。
(3) A glass window 1 is provided on a part of the circumferential surface of the circular anti-contamination shield 2.
5 is convenient for monitoring the internal sputtering state.

(4)真空チャンバー1へのサブストレートの搬入路5
及び搬出路6をチャンバー1の一方の側面より引出し、
それらにそれぞれ圧力調整室8A、8Bを設けたので、
真空チャンバー1の真空をザブストレート搬入搬出のた
びに極端に制置さなくても良く、また、設置場所を少な
くすることができる。さらに、チャンバー1の一方の側
面より基板4が入り、同じ面より基板4が出てくるから
、作業動作の監視に好都合である。
(4) Substrate delivery path 5 to vacuum chamber 1
and the unloading path 6 is pulled out from one side of the chamber 1,
Since pressure adjustment chambers 8A and 8B were provided for each of them,
It is not necessary to maintain the vacuum in the vacuum chamber 1 extremely every time the substrate is carried in and carried out, and the installation space can be reduced. Further, since the substrate 4 enters from one side of the chamber 1 and comes out from the same side, it is convenient for monitoring work operations.

なお、上記実施例では、位置Cにおいてスパッタ処理を
行わない場合を示したが、必要に応じて位置Cにおいて
もスパッタ処理を行うようにすることも可能である。ま
た位置Aにおける逆スパツタを省略し逆スパツタは真空
チャンバー搬入前に行うようにすることも可能である。
In addition, although the above-mentioned example showed the case where sputtering processing is not performed at position C, it is also possible to perform sputtering processing at position C as needed. It is also possible to omit the reverse sputtering at position A and perform the reverse sputtering before the vacuum chamber is brought into the chamber.

以上説明したように、本発明によれば、ガラス窓を形成
した円筒型防着シールドを用いこの内部でスパッタ処理
を実行するようにして真空室内の汚れを防止しかつスパ
ッタ状態を監視可能とするとともに、円筒型防着シール
ドを組合せて回転部44を描成しサブストレートを移送
する(幾能を持たせることにより、サブストレートの連
続的なスパッタ処理を可能にした連続式スパッタ装置を
得ることがで終る。
As explained above, according to the present invention, a cylindrical anti-adhesion shield having a glass window is used to perform sputtering processing inside the shield, thereby preventing contamination in the vacuum chamber and making it possible to monitor the sputtering state. At the same time, a cylindrical anti-adhesion shield is combined to form a rotating part 44 to transport the substrate (by providing a geometrical function, a continuous sputtering device that enables continuous sputtering of the substrate can be obtained) It ends with.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係る連続式スパッタ装置の実施例を示
す平断面図、第2図は実施例における円筒型防着シール
ドの構成を示す斜視図である。 1・・・真空チャンバー、2・・・円筒型防着シールド
、3・・・回転部材、4・・・サブストレート、5・・
・搬入路、6・・・搬出路、7,9・・・シャッタ、8
A、8B・・・圧力調整室、11・・・ターゲット、]
2・・・サブストレートホルダ、15・・・ガラス窓。 特許出願人 東京電気化学工業株式会社 代理人 弁理士 村 井  隆
FIG. 1 is a plan sectional view showing an embodiment of a continuous sputtering apparatus according to the present invention, and FIG. 2 is a perspective view showing the structure of a cylindrical anti-adhesion shield in the embodiment. DESCRIPTION OF SYMBOLS 1... Vacuum chamber, 2... Cylindrical anti-stick shield, 3... Rotating member, 4... Substrate, 5...
- Loading path, 6... Carrying out path, 7, 9... Shutter, 8
A, 8B...Pressure adjustment chamber, 11...Target,]
2...Substrate holder, 15...Glass window. Patent applicant Tokyo Denki Kagaku Kogyo Co., Ltd. Patent attorney Takashi Murai

Claims (2)

【特許請求の範囲】[Claims] (1)真空室と、該真空室の入側及び出側に夫々連通可
能に設けられる圧力調整室と、一部にガラス窓を形成し
た円筒型防着シールドを組合せた回転部材と、前記円筒
型防府シールドの回11云中心側の端面に配置されて原
子を放出するターゲットと、前記円筒型防着シールドの
池端面に配置されるサブストレートホルダとを備え、入
側の前記圧力調整室より前記真空室に入ったサブストレ
ートを、前記サブストレートホルダで保持してスパッタ
を実行し、前記回転部祠の回転により排出位置に移送し
、出側の前記圧力調整室に送出することを特徴とする連
続式又バッタ装置。
(1) A rotary member that is a combination of a vacuum chamber, a pressure adjustment chamber that is provided so as to be able to communicate with the inlet and outlet sides of the vacuum chamber, and a cylindrical anti-adhesive shield partially formed with a glass window, and the cylindrical member. A target disposed on the end face of the center side of the cylindrical anti-fouling shield to emit atoms, and a substrate holder disposed on the end face of the cylindrical anti-adhesion shield, from the pressure adjustment chamber on the entry side. The substrate entering the vacuum chamber is held by the substrate holder to perform sputtering, and is transferred to a discharge position by rotation of the rotary part and sent to the pressure adjustment chamber on the exit side. Continuous type or grasshopper device.
(2)前記入側及び出側の圧力調整室を前記真空室の一
方の側面側に配置した特許請求の範囲第1項記載の連続
式スパッタ装置。
(2) The continuous sputtering apparatus according to claim 1, wherein the pressure adjustment chambers on the input side and the output side are arranged on one side of the vacuum chamber.
JP20462182A 1982-11-24 1982-11-24 Continuous sputtering device Granted JPS5996271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20462182A JPS5996271A (en) 1982-11-24 1982-11-24 Continuous sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20462182A JPS5996271A (en) 1982-11-24 1982-11-24 Continuous sputtering device

Publications (2)

Publication Number Publication Date
JPS5996271A true JPS5996271A (en) 1984-06-02
JPH0242900B2 JPH0242900B2 (en) 1990-09-26

Family

ID=16493503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20462182A Granted JPS5996271A (en) 1982-11-24 1982-11-24 Continuous sputtering device

Country Status (1)

Country Link
JP (1) JPS5996271A (en)

Also Published As

Publication number Publication date
JPH0242900B2 (en) 1990-09-26

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