JPS5991361A - Detector for foreign particle in electronic component - Google Patents

Detector for foreign particle in electronic component

Info

Publication number
JPS5991361A
JPS5991361A JP57201635A JP20163582A JPS5991361A JP S5991361 A JPS5991361 A JP S5991361A JP 57201635 A JP57201635 A JP 57201635A JP 20163582 A JP20163582 A JP 20163582A JP S5991361 A JPS5991361 A JP S5991361A
Authority
JP
Japan
Prior art keywords
short
electronic component
foreign particles
switching means
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57201635A
Other languages
Japanese (ja)
Inventor
Mitsuo Honma
満雄 本間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57201635A priority Critical patent/JPS5991361A/en
Publication of JPS5991361A publication Critical patent/JPS5991361A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable quick detection of short-circuiting and release time depending on the presence of foreign particles in a cavity, material and foreign matters by employing a non-distructive method. CONSTITUTION:While a transistor Tr is conductive, a gate of SCR goes down to a ground potential and a lamp L is OFF. Then, a relay 31 to be measured is vibrated with a vibration tester 11 to identify foreign particles in a cavity when an impact sound noise is detected. When the foreign particles causes the internal contact 315 to be short-circuited, the gate voltage of SCR rises up to the power source voltage and when the short-circuiting is held for a longer time than the constant for the rise, the SCR conducts to light the lamp L. The resetting of a detection circuit 32 is done by the operation of a switch S.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は例えばパッケージの内部にキャビティ(突所
)を有する電子e、i品(I C、l−ランジスタ、リ
レー等)の品質管理や受入検査に適用さnる電子部品内
異物粒子検出装随に関する。
[Detailed Description of the Invention] [Technical Field of the Invention] This invention is applicable to, for example, quality control and acceptance inspection of electronic e- and i-products (ICs, l-transistors, relays, etc.) that have cavities (protrusions) inside their packages. The present invention relates to an apparatus for detecting foreign particles in electronic components, which is applied to electronic components.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

周知のように、電子部品のキャビティ内に存在する各種
異物粒子は電子部品に様々な悪に神を与えることがある
。近時、電子部品の信頼性向上のため、この異物粒子を
検出する要求が特に航窒、宇宙、船舶産業界等で高まっ
ている。
As is well known, various foreign particles present in the cavities of electronic components can cause various evils to the electronic components. Recently, in order to improve the reliability of electronic components, there has been an increasing demand for detecting foreign particles, especially in the navigation, space, and ship industries.

この検出方法の一例として、電子部品に振動と同時に衝
撃を加え、付着している粒子を振い落してキャビティ内
壁に衝突させてその@9音を検出するPIND試験装@
 (particle Irrypncl No1se
pefecflon SyStem)と称する装置を用
いた非破壊試験が採用されている。
As an example of this detection method, a PIND test device applies vibration and shock to electronic components, shakes off adhering particles, causes them to collide with the inner wall of the cavity, and detects the sound.
(particle Irrypncl No.1se
A non-destructive test using a device called pefecflon System has been adopted.

第1図は、上記PIND試験装置tk示すものである。FIG. 1 shows the PIND test apparatus tk.

1llri振動試験機であり、この振$)J試験機1ノ
は振動源12よシ供給さnる信号によって振動さnる。
The vibration tester 1 is vibrated by a signal supplied from a vibration source 12.

この振wJ源12は例えは正弦σU発振器と増幅器から
構成さnておシ、jツ[定の撮動信号を発生するように
なさ11ている。また、前記振M試虎0@11には絶縁
部13を介して音響トランスデユーサ14が設けられて
いる。この■響トランスデユーサ14は例えば数100
I(Hzで感度が最大となるように設計されておシ、こ
のトランスデユーサ14の上面部には両面テープまたは
超音波を伝える水溶性の接着剤15を用いて被測定電子
部品16が設けら扛る。しかして、この電子部品16は
前記振動試験轡1)によって振動さ1、この電子部品1
6のキャピテイ内に異物粒子が存在すnば、その衝突に
よって高周波の衝突音響ノイズが発生される。このノイ
ズは前記−71?)ランスデューザ14によって検出さ
扛、このトランスデユーサ14の出力信号は超音波増幅
器17を介して閾値検出器18に供給さnる。この闇値
検出器18は入力信号が所足レベルを越えた場合信号を
出力するものであり、この信号はランプ19に供給され
このランプ19が魚釣さ2’して異物粒子の存在が表示
さ一2Lる。また、前−己閾値検出器18、超音波増1
h器17の出力信号は前記振動源12の出力信号および
前記振動試験機11に設けら7した加速度計20の出力
信号がチャージ増幅器21によって増幅さfした45号
とともに、オシロスコープ22に供給され記録される。
This vibration wJ source 12 is constructed, for example, from a sine σU oscillator and an amplifier, and is configured to generate a constant imaging signal. Further, an acoustic transducer 14 is provided to the vibration M test tiger 0@11 via an insulating section 13. The number of this sound transducer 14 is, for example, several hundred.
The electronic component 16 to be measured is mounted on the top surface of the transducer 14 using double-sided tape or a water-soluble adhesive 15 that transmits ultrasonic waves. Therefore, this electronic component 16 is vibrated by the vibration tester 1), and this electronic component 1 is
If foreign particles exist in the cavity 6, high-frequency collision acoustic noise is generated by their collision. Is this noise -71 mentioned above? ) The output signal of this transducer 14 is fed to a threshold detector 18 via an ultrasonic amplifier 17. This dark value detector 18 outputs a signal when the input signal exceeds a required level, and this signal is supplied to a lamp 19, which is activated 2' to indicate the presence of foreign particles. Saichi 2L. Also, the front-self threshold detector 18, the ultrasonic amplification 1
The output signal of the oscilloscope 17 is supplied to the oscilloscope 22 together with the output signal of the vibration source 12 and the output signal of the accelerometer 20 provided in the vibration tester 11, which is amplified by the charge amplifier 21 and recorded. be done.

尚、電子部品16のキャビティ内部に存在する異物粒子
は損動全加える前や振動中に静電気やその内部構造によ
って動かなくなる場合があシ、この粒子ケ振動中に自由
にするため、前記振動試験機11および振動源12は衝
撃を発生ずる機能も有している。
It should be noted that foreign particles existing inside the cavity of the electronic component 16 may become stuck due to static electricity or their internal structure before applying any damage or during vibration, so in order to free these particles during vibration, the vibration test The machine 11 and the vibration source 12 also have the function of generating shock.

また、一般に粒子とキャビティ内壁との衝突において、
その反発係数をKとすると、キャビティ内壁の高さH(
インチ)、振幅X(インチ)、周波数f(Hz)との間
には X=IIx(1−K)/yrx(1−K)f=5.52
 X (Gx (1+K)/Fix (1−K J l
k但し、G:重力加速度 の関係があシ、Kは各粒子、各パッケージによって一定
ではないがK”0としてパッケージ内壁の高さに応じた
周波数と加速度レベルを・R’−> 5jiして粒子の
質量を子側することができる。
In addition, in general, when particles collide with the inner wall of the cavity,
If the coefficient of repulsion is K, then the height of the inner wall of the cavity H(
(inch), amplitude X (inch), and frequency f (Hz): X=IIx(1-K)/yrx(1-K)f=5.52
X (Gx (1+K)/Fix (1-K J l
However, there is a relationship between G: gravitational acceleration, and K is not constant depending on each particle and each package, but assuming K"0, the frequency and acceleration level according to the height of the inner wall of the package are ・R'-> 5ji The mass of the particle can be expressed as the child side.

ところで、導電性の異物粒子がキャビティ内に存在して
いる場合は回路の短!#!1原因となるが、リレー等の
場合は非導電性の粒子でも接点の接触不良音引き起す。
By the way, if there are conductive foreign particles inside the cavity, the circuit is short! #! 1, but in the case of relays, even non-conductive particles can cause contact failure noise.

上記試験fi:s:では電子部品の内部に存在する異物
粒子の質量を非破壊的手法によって検出することができ
るものの、その粒子の相質や大きさ、形状あるいは悪影
響時間を検出することができない欠点を有している。
In the above test fi:s:, although it is possible to detect the mass of foreign particles present inside electronic components using a non-destructive method, it is not possible to detect the phase quality, size, shape, or adverse effect time of the particles. It has its drawbacks.

異物粒子の材質、大きさ、形状を分析する方法も釉々研
究さnてお)、一般的な方法としてはパッケージ型の部
品の場合、パッケージ表面の一部をヤスリ等で削9、キ
ャビティ内に外部から粒子が入シ込まないようにして針
のような物で穴を開ける。その穴に接着テープを貼シ、
再度PIND試験を行う。この試験はテープに異物粒子
が付着し、検出信号が出なくなるまで繰返し行わ扛る。
Methods for analyzing the material, size, and shape of foreign particles have also been studied in glazes.In the case of package-type parts, the general method is to file a part of the package surface with a file, etc., and then remove the inside of the cavity. Make a hole with something like a needle to prevent particles from entering from the outside. Apply adhesive tape to the hole,
Perform the PIND test again. This test is repeated until foreign particles adhere to the tape and no detection signal is generated.

この後、テープを剥がし、顕微瞬等で粒子を観察して大
きさ、形状を識別し、さらにX線写^撮影によって粒子
の材質が識別される。
After that, the tape is removed and the particles are observed under a microscope to identify their size and shape, and then the material of the particles is identified by X-ray photography.

このような方法によni[、異物粒子の大きさ、形状、
材質を分析することができる。しかし、この分析にはパ
ッケージの一部全破壊しなけ71゜ばならず、こ扛には
特殊な技能全必歎とする。
By such a method, the size, shape, and
Materials can be analyzed. However, this analysis requires the complete destruction of a portion of the package, which requires special skills.

また、試験、分析に長時間′fI:要し、犬がかりな設
備を必滅とするものであシ、多積、多液の%。
In addition, testing and analysis require a long period of time, laborious equipment is required, and there is a large amount of volume and liquid.

子部品の品質管理や受入検査のための障害となっている
。特に、異物粒子の時間的影響性の判定が重要となる電
子部品(例えば有接点部品であるリレー、スイッチ等)
については前記破壊的な試験等では基本的に原因究明が
不可能な場合が多く、他の検出手段が要望さオしている
This has become an obstacle for quality control and acceptance inspection of child parts. In particular, electronic components where it is important to determine the temporal influence of foreign particles (e.g. contact components such as relays and switches)
In many cases, it is basically impossible to investigate the cause using the above-mentioned destructive tests, and other detection means are desired.

〔発明の目的〕[Purpose of the invention]

この発明tよ上記事情に基づいてなさ2したもので、そ
の目的とするところは非破壊的手法によって′電子部品
キャビティ内における異物オ・“4仔の存在の壱無およ
び材質、異物粒子による短絡あるいは開放時間をff+
j年な構成によって短時間に検出することが可能な′μ
子部品1ノコ異物粒子検出44 jig、 ’!r提供
しようとするものである、〔発明の概要〕 この発明は電子部品をPIND試験装甑によって振動さ
せ、衝突音響ノイズの有無より異物粒子の存在を判定す
るとともに、前記電子部品の外部接続端子の導通、非導
通を第1乃至第3のスイッチング手段および時定数回路
、表示手段を用いて検出することによシ、電子部品のキ
ャビティ内部に存在する異物粒子の材質および短終ある
いは開放時間全判定可能としたものである。
This invention has been made based on the above-mentioned circumstances, and its purpose is to use a non-destructive method to detect the presence of foreign particles in electronic component cavities and to prevent short circuits due to the material and foreign particles. Or open time ff+
′μ, which can be detected in a short time with a unique configuration
Child part 1 saw foreign particle detection 44 jig, '! [Summary of the Invention] This invention vibrates an electronic component using a PIND test device, determines the presence of foreign particles based on the presence or absence of collision acoustic noise, and detects the external connection terminal of the electronic component. By detecting conduction or non-conduction using the first to third switching means, time constant circuit, and display means, it is possible to determine the material of foreign particles present inside the cavity of the electronic component and the short or complete open time. This makes it possible to judge.

〔発明の実施例〕[Embodiments of the invention]

以下、この発明の一寮施例について図面を参照して詩、
明する。
The following is a poem about the dormitory embodiment of this invention with reference to the drawings.
I will clarify.

第2図において3ノは被測定電子部品、例えばリレーで
あり、このリレー31は前記PINJ)試験装置の振動
試験機1ノに被測定電子部品として数句けられる。また
、32は前記リレー3ノの外部端子31.〜314に接
続さnる検出回路金示すものであり、この検出回路32
は前記リレー31の内部接点31m+ 316が内部異
物粒子によシ所定時間以上に亘って短絡(または閉接)
された場合、こf′L′fI:表示するものである。
In FIG. 2, numeral 3 indicates an electronic component to be measured, such as a relay, and this relay 31 is installed as an electronic component to be measured in the vibration tester 1 of the above-mentioned PINJ test equipment. 32 is an external terminal 31. of the relay 3. ~314 is shown as a detection circuit connected to the detection circuit 32.
The internal contacts 31m+ 316 of the relay 31 are short-circuited (or closed) for a predetermined period of time or more due to internal foreign particles.
If it is, this f'L'fI: is to be displayed.

即ち、検出回路32における第1のスイッチング手段例
えばトランジスタTrのベース、エミッタはそれぞn前
記リレー31の外部端子例えtf J I t r J
 1 tに接続さ扛る、このトランジスタ’frのエミ
ッタは接地さ第11、コレクタはコンデンサCを介して
接地されるとともに、第2のスイッチング手段、例えば
サイリスクSCRのゲートに接続さnる。このサイリス
タSCHのカソードは接地され、アノードは表示手段、
例えばランプL″ft−介して第3のスイッチング手段
、例えば常閉スイッチSの一方固定接点に接続さfする
。このスイッチSの他方固定接点は向(At、 ’TI
(!QDC’t−介して接地さnる。また、前記スイッ
チSの一方固定接点は抵抗R1v司変抵抗R,’i直列
に介して前記トランジスタ1t 、のコレクタに接続さ
れるとともに抵抗Rsk介してトランジスタTrのベー
スに接続さ扛る。尚、前MLコンテンサCおよび抵抗R
1%1]変抵抗R1は時定数回路を構成している。
That is, the base and emitter of the first switching means, for example, the transistor Tr in the detection circuit 32 are the external terminals of the relay 31, for example tf J I tr J
1, the emitter of this transistor 'fr is grounded, the collector is grounded via a capacitor C, and is connected to the gate of a second switching means, for example a SIRISC SCR. The cathode of this thyristor SCH is grounded, and the anode is a display means,
For example, it is connected to one fixed contact of a third switching means, for example a normally closed switch S, via a lamp L''ft-.
(!QDC't- is connected to the ground. Also, one fixed contact of the switch S is connected to the collector of the transistor 1t through a resistor R1v and a variable resistor R,'i in series, and is connected to the collector of the transistor 1t through a resistor Rsk. It is connected to the base of the transistor Tr.The ML capacitor C and the resistor R are connected to the base of the transistor Tr.
1%1] The variable resistor R1 constitutes a time constant circuit.

上記構成において、トランジスタlit rは通常嗜通
さ扛ておシ、この状態ではトランジスタTrの低出力イ
ンピーダンスによってサイリスタSCRのゲートはほぼ
接地電位とされる。したがって、サイリスクSCRは非
導通状態とさ才tており、ランプLは消灯されている。
In the above configuration, the transistor litr is normally turned on, and in this state, the gate of the thyristor SCR is brought to approximately ground potential due to the low output impedance of the transistor Tr. Therefore, the signal SCR is in a non-conducting state and the lamp L is turned off.

この状態において、振動試験機11によってリレー31
が振動さn1従来と同様の手段によって衝突音響ノイズ
が検出され扛はキャピテイ内に異物粒子が存在するもの
と判定さnる。さらに、この異物粒子によってリレー3
1の内部接点31.が短絡されると、前記トランジスタ
Trのベースは接地さits このトランジスタTrは
オフ状態とさiする。このため、トランジスタTrのコ
レクタに接続されたサイリスクSCHのゲート電圧が電
源電圧まで上昇される。この上昇の割合はコンデンサC
と抵抗Rl + R*の1旧で定まる時定数によって規
定され、例えrfc二〇、001μF’、R1+Rz 
” 1000 = 15000では数10 p see
である。したがって、この時定数よシ長く短絡状態が保
持さ′r′LlrLは、サイリスタSCRが導通状態と
さn1ランプLが点灯さnる。よって、リレー31の内
部接点31mが短絡さnたものと判定さnる。
In this state, the relay 31 is
The collision acoustic noise is detected by means similar to the conventional method, and it is determined that foreign particles are present in the cavity. Furthermore, this foreign particle causes relay 3
1 internal contact 31. When the transistor Tr is short-circuited, the base of the transistor Tr is grounded, and the transistor Tr is in an off state. Therefore, the gate voltage of the SIRISK SCH connected to the collector of the transistor Tr is increased to the power supply voltage. The rate of this increase is the capacitor C
and the time constant determined by the resistor Rl + R*, for example rfc20,001μF', R1+Rz
” 1000 = 15000 is number 10 p see
It is. Therefore, if the short-circuit state is maintained longer than this time constant, the thyristor SCR becomes conductive and the n1 lamp L is lit. Therefore, it is determined that the internal contact 31m of the relay 31 is short-circuited.

この検出回路32のリセットはスイッチSを操作するこ
とによって行わnる。仮に、スイッチSを操作したこと
によ)ランプLが消灯すnば、リレー31における内部
接点315の短絡状態が解除さ扛ているものと判定さn
、ランプLが消灯しなけ扛ば短絡状態が継続しているも
のと判定さnる。
The detection circuit 32 is reset by operating the switch S. If the lamp L goes out (by operating the switch S), it is determined that the short-circuited state of the internal contact 315 in the relay 31 has been released.
, if the lamp L is not turned off, it is determined that the short-circuit condition continues.

上記構成によnば、PIND試験中または試験後、被測
定電子部品例えばリレー31の外部接続端子311* 
31 Nの導電性、非導電性を検出して2ンプLによっ
て表示することによシ、異物粒子の導電性、非導電性の
判定およびその異物粒子の短絡時間も判定可能としてい
る。したがって、電子部品全破壊することなく必要な試
験全行い得るため極めて便利なものである。また、構成
が簡単で試験に要する時間が短時間であるため、多量の
部品の品質横歪に好適である。
According to the above configuration, during or after the PIND test, the external connection terminal 311* of the electronic component to be measured, for example, the relay 31
By detecting the conductivity and non-conductivity of 31 N and displaying it using 2 amplifiers L, it is possible to determine the conductivity and non-conductivity of the foreign particle and also determine the short-circuit time of the foreign particle. Therefore, it is extremely convenient because all necessary tests can be performed without completely destroying electronic components. In addition, since the configuration is simple and the time required for testing is short, it is suitable for quality lateral distortion of a large number of parts.

尚、検出回路32は1回路に制限さnるものではなく、
必要に応じて複数回路用いtは、被測定電子部品の複数
の内部回路の状態を同時に検査することが可能である。
Note that the detection circuit 32 is not limited to one circuit;
If necessary, multiple circuits can be used to simultaneously test the states of multiple internal circuits of the electronic component to be measured.

また、上記実施例では本来開回路であるべき内部接点が
異物粒子によって短絡(閉接)さnた状態全検出する回
路構成であったが、第3図に示す回路構成とすnば、異
物粒子の衝突によって閉回路であった部分が開放状態と
さnたことを検出することもできる。尚、第3図におい
て、第2図と同一部分には同一符号を付す。
In addition, in the above embodiment, the circuit configuration was such that all states in which the internal contacts, which should normally be open circuits, were short-circuited (closed) due to foreign particles were detected, but with the circuit configuration shown in FIG. It is also possible to detect that a previously closed circuit has become open due to particle collisions. In FIG. 3, the same parts as in FIG. 2 are given the same reference numerals.

即ち、第3図において、抵抗R4の両端部は被測定電子
部品の外部接続端子に接続さnる。
That is, in FIG. 3, both ends of the resistor R4 are connected to external connection terminals of the electronic component to be measured.

この抵抗R4の一端部は抵抗Rs ’c介してスイッチ
Sの一方固定接点に接続さn、他端部は接地さするとと
もに゛直流電源DC’(r介してスイッチSの他方固定
接点に接続さnる。前記抵抗R41R5の接続点は抵抗
R1および可変抵抗R2k直列に介してトランジスタT
「のベースに接続さ扛るとともに、コンデンサCk介し
て接地さnる。前記トランジスタTrのコレクタは抵抗
R6を介して前記スイッチSの一方固定接点に接続さn
1エミツタはサイリスタSCHのゲートに接続さnる。
One end of this resistor R4 is connected to one fixed contact of the switch S through a resistor Rs'c, and the other end is grounded and connected to the other fixed contact of the switch S through a DC power supply DC' (r). The connection point of the resistors R41R5 is connected to the transistor T through the resistor R1 and the variable resistor R2k in series.
The collector of the transistor Tr is connected to one fixed contact of the switch S via a resistor R6.
1 emitter is connected to the gate of thyristor SCH.

このサイリスタSCRのカソードは接地さn、アノード
(はラングL′lt介して前記スイッチSの一方固定接
点に接続さnる。
The cathode of this thyristor SCR is grounded, and the anode is connected to one fixed contact of the switch S via a rung L'lt.

このような構成とす扛ば閉回路の開放状態を上記実施と
同様に検出できる。
With such a configuration, the open state of the closed circuit can be detected in the same manner as in the above implementation.

さらに、電子部品によっては第2図、第3図に示す検出
回路を組合せて使用することも可能である。
Furthermore, depending on the electronic component, it is also possible to use a combination of the detection circuits shown in FIGS. 2 and 3.

また、上記両実施例において、第1.第2゜第3のスイ
ッチング手段はトランジスタ、サイリスタ、機械的な常
閉スイッチに限定さ扛るものではない。
Furthermore, in both of the above embodiments, the first. The second and third switching means are not limited to transistors, thyristors, and mechanical normally closed switches.

その他、この発明の要旨を変えない範囲で種々変形実施
可能なことは勿論である。
It goes without saying that various other modifications can be made without departing from the gist of the invention.

〔発明の効果〕〔Effect of the invention〕

以上、詳述したようにこの発明によしは、非破壊的手法
によって電子部品のキャビティ内における異物粒子の存
在の有無および材質、異物粒子による短絡あるいは開放
時間を簡単な構成によって短時間に検出することが可能
な電−子一部市内異物粒子検出装置を提供できる。
As detailed above, the present invention uses a non-destructive method to detect the presence or absence of foreign particles in the cavity of an electronic component, the material, and the short circuit or open time caused by the foreign particles in a short time using a simple configuration. It is possible to provide an electronic particle detection device capable of detecting foreign particles within a city.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来およびこの発明に適用さnるPIND試験
装置の構成を説明するために示す図、第2図はこの発明
に係わる電子部市内異物粒子検出装置の一実施例を示す
回路構成図、第3図はこの発明の他の実施例を示す回路
構成図である。 11・・・振動試験機、12・・・振動源、31・・・
リレー、31.〜314・・・外部接続端子、316゜
316・・・内部接点、Tr・・・トランジスタ、SC
R・・・サイリスタ、S・・・スイッチ%R1・・・抵
抗、R2・・・可変抵抗、C・・・コノデフ丈。 出願人代理人  弁理士 鈴 江 武 診第1図 第3図
FIG. 1 is a diagram shown to explain the configuration of a conventional PIND test device and a PIND test device applied to the present invention, and FIG. 2 is a circuit configuration showing an embodiment of a foreign particle detection device in an electronic section according to the present invention. 3 are circuit configuration diagrams showing other embodiments of the present invention. 11... Vibration tester, 12... Vibration source, 31...
Relay, 31. ~314...External connection terminal, 316°316...Internal contact, Tr...Transistor, SC
R...Thyristor, S...Switch %R1...Resistor, R2...Variable resistor, C...Cono differential length. Applicant's representative Patent attorney Takeshi Suzue Examination Figure 1 Figure 3

Claims (1)

【特許請求の範囲】[Claims] 被測定電子部品に振動および衝撃を与える手段と、前記
電子部品の外部接続端子に接続さ11電子部品の内部回
路の導通、非導通に応じてオン、オフ制御さnる第1の
スイッチング手段と、この絹1のスイッチング手段の出
力端に設けられた時定数回路と、この時定数回路の出力
信号によりオン、オフ制御さ1.る第2のスイッチング
手段と、この第2のスイッチング手段によって制御され
る表示手段と、前記第1.第2のスイッチング手段に供
給する電力を制御する第3のスイッチング手段とを具備
したこと’(r’t¥徴とする電子部市内異物粒子検出
側も
means for applying vibration and impact to the electronic component to be measured; and a first switching means connected to the external connection terminal of the electronic component and controlled to turn on and off depending on whether the internal circuit of the electronic component is conductive or non-conductive. , a time constant circuit provided at the output end of the switching means of this silk 1, and on/off control by the output signal of this time constant circuit 1. a second switching means controlled by the second switching means; a display means controlled by the second switching means; and a third switching means for controlling the power supplied to the second switching means.
JP57201635A 1982-11-17 1982-11-17 Detector for foreign particle in electronic component Pending JPS5991361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57201635A JPS5991361A (en) 1982-11-17 1982-11-17 Detector for foreign particle in electronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57201635A JPS5991361A (en) 1982-11-17 1982-11-17 Detector for foreign particle in electronic component

Publications (1)

Publication Number Publication Date
JPS5991361A true JPS5991361A (en) 1984-05-26

Family

ID=16444341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57201635A Pending JPS5991361A (en) 1982-11-17 1982-11-17 Detector for foreign particle in electronic component

Country Status (1)

Country Link
JP (1) JPS5991361A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6379969A (en) * 1986-07-23 1988-04-09 ザ ビ−オ−シ− グル−プ インコ−ポレ−テツド Wafer storing and transferring method and apparatus
CN102435672A (en) * 2011-09-02 2012-05-02 哈尔滨工业大学 Detection station, and automatic detection device and detection method for surplus object of aerospace electronic equipment by using detection station
CN102830421A (en) * 2012-08-09 2012-12-19 哈尔滨工业大学 Method for identifying redundancies and assembly of satellite-borne electronic device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6379969A (en) * 1986-07-23 1988-04-09 ザ ビ−オ−シ− グル−プ インコ−ポレ−テツド Wafer storing and transferring method and apparatus
CN102435672A (en) * 2011-09-02 2012-05-02 哈尔滨工业大学 Detection station, and automatic detection device and detection method for surplus object of aerospace electronic equipment by using detection station
CN102830421A (en) * 2012-08-09 2012-12-19 哈尔滨工业大学 Method for identifying redundancies and assembly of satellite-borne electronic device

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