JPS5989771A - Ion sputtering device provided with mechanism for automatically increasing impressed voltage - Google Patents

Abstract

PURPOSE:To provide a titled device which can decrease the damage on a sample by electron, ion etc. by the constitution wherein the discharge voltage for the purpose of ion sputtering is gradually increased to a predetermined voltage at a suitable speed with respect to the sample to be coated thereon. CONSTITUTION:A sample 2 is fixed on a sample holder 3, and is placed on a sample base 4 in a vacuum chamber 1 of a main body. The inside of the chamber 1 is maintained under 10<-1>-10<-2>Torr pressure by operating a rotary pump 5 in order to coat a conductive thin film on the sample 2. A target electrode 6 is provided in the chamber 1 and is connected, via an insulator 7, to a high voltage rectifier 9 and a high voltage transformer 10 by means of a high voltage cord 8. A unit 11 which increases gradually the voltage to be supplied to the primary side of the transformer 10 as shown by a graph only in the stage of starting is provided in the above-mentioned constitution. The damage of the sample 2 by the plasma generated in the chamber 1 is decreased if the voltage is gradually increased by using such unit 11.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film generating apparatus, and particularly to a thin film generating apparatus suitable for use in a DC discharge type ion sputtering apparatus. If the discharge voltage is high, set it in advance so that this voltage is generated.For example, when targeting gold,
The voltage is about 1500V to 2000V. On the other hand, true 9 degrees defines the discharge current with respect to this set voltage, and must be set to an appropriate value. In the case of the above target, approximately 10-+'('orr is used in total.
In order to check such discharge conditions, short poem 1141
The light transmitter has an application switch for monitoring the radiation state. If the discharge is appropriate, the timer will be activated and coating will take place for the required amount of time.

An object of the present invention is to provide an ion sputtering apparatus that can reduce damage to a sample caused by electrons, ions, etc.

In conventional devices, the coating of biological samples is often destroyed after coating. Experiments have revealed that the cause of this is that electrons and negative ions generated by discharge collide with the sample at high speed during the initial stage of sputtering, causing damage due to thermal and mechanical impact caused by the ions. That is, if the surface of a defective conductor sample is suddenly charged, it may cause damage even if it is only for a short time. To avoid this, it is a good idea to gradually increase the discharge pressure to raise the level of the sample surface over time.

An embodiment of the present invention will be explained below with reference to FIG.

The sample 2 is fixed to a sample holder 3 and placed on a sample stage 4 inside the large open chamber 1 of the main body. In order to coat the sample with conductive # film, the chamber is set at 10-1.
A pressure of ~10" Torr is maintained, which is carried out by a rotary pump 5. A !-get electrode 6 is provided in the chamber, and an h voltage cord 8 is connected through an insulator 7.
is connected to a high voltage rectifier 9 and a crystal voltage transformer IO.

The present invention has a unit 11 that gradually increases the voltage of Ml and pressure supplied to the downstream side of the high voltage transformer only at the time of starting, as shown in the graph shown in FIG.

According to this embodiment, the sample 2 has the effect of reducing damage caused by plasma generated within the chamber.

The contents of 11 shown in FIG. 1 are shown in FIG.

In order to gradually increase the supply voltage, a Zyrister 12 is used to control the current 100 from the power supply section 13.

The Zyristor 12 is stably operated by the drive unit 14 and the control unit 15, and operation inputs are input to the control unit 155!゛The voltage rise time varies depending on the applied voltage and the sample, but in ordinary sputtering equipment, the steady discharge voltage is 20
By performing slow-up for 3 to 4 seconds at 00V and 20mA discharge current, coding could be performed without breaking the biofilm.

It is desirable that the slow-up time can be adjusted depending on the discharge pressure and discharge current, and also on the properties of the sample.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram of an embodiment of the present invention, FIG. 2 is a diagram showing the relationship between voltage applied to a target electrode and time, and FIG. 3 is an internal circuit diagram of a supply voltage gradual increase unit. 11...Supply voltage gradual increase unit, 12...Lee Iristor, 13...Power supply section, 14...Zyristor drive section, procedural amendment (method) Invention of Special Revision Application No. 199329 filed in 1982
Name Person who corrects ion sputtering equipment with automatic applied voltage increase feature
5-1 Marunouchi-chome, Chiyoda-ku, Tokyo Name: ffi
+01 Hitachi Corporation Representative 3 1)
Katsu Shigeju Address: 1040 Ichige, Katsuta City, Ibaraki Prefecture Name Hitachi Lungkake Seiki Co., Ltd. Representative Susumu Ando Deputy Director Address: 5-1 Marunouchi-chome, Chiyoda-ku, Tokyo Amended
The title of the invention in the power of attorney was made consistent with the title of the invention in the written statement). 2. We will submit a power of attorney to confirm your authority to represent you. Attachment II catalog 1, detailed details! 1 letter 2,
One or more power of attorney

Claims (1)

[Claims] 1. W using ion sputtering! Film generation device fK
An ion sputtering apparatus characterized in that the discharge pressure is gradually increased to a predetermined voltage at an appropriate speed for the sample to be coated.