JPS5973498U - シ−ルド掘進機 - Google Patents

シ−ルド掘進機

Info

Publication number
JPS5973498U
JPS5973498U JP16956782U JP16956782U JPS5973498U JP S5973498 U JPS5973498 U JP S5973498U JP 16956782 U JP16956782 U JP 16956782U JP 16956782 U JP16956782 U JP 16956782U JP S5973498 U JPS5973498 U JP S5973498U
Authority
JP
Japan
Prior art keywords
magnetic field
excavated soil
movement
speed
excavated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16956782U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6326480Y2 (OSRAM
Inventor
忠男 吉川
進 布村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanadevia Corp
Original Assignee
Hitachi Zosen Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Zosen Corp filed Critical Hitachi Zosen Corp
Priority to JP16956782U priority Critical patent/JPS5973498U/ja
Publication of JPS5973498U publication Critical patent/JPS5973498U/ja
Application granted granted Critical
Publication of JPS6326480Y2 publication Critical patent/JPS6326480Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Excavating Of Shafts Or Tunnels (AREA)
JP16956782U 1982-11-08 1982-11-08 シ−ルド掘進機 Granted JPS5973498U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16956782U JPS5973498U (ja) 1982-11-08 1982-11-08 シ−ルド掘進機

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16956782U JPS5973498U (ja) 1982-11-08 1982-11-08 シ−ルド掘進機

Publications (2)

Publication Number Publication Date
JPS5973498U true JPS5973498U (ja) 1984-05-18
JPS6326480Y2 JPS6326480Y2 (OSRAM) 1988-07-18

Family

ID=30370415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16956782U Granted JPS5973498U (ja) 1982-11-08 1982-11-08 シ−ルド掘進機

Country Status (1)

Country Link
JP (1) JPS5973498U (OSRAM)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7005717B2 (en) 2000-05-31 2006-02-28 Freescale Semiconductor, Inc. Semiconductor device and method
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US7045815B2 (en) 2001-04-02 2006-05-16 Freescale Semiconductor, Inc. Semiconductor structure exhibiting reduced leakage current and method of fabricating same
US7067856B2 (en) 2000-02-10 2006-06-27 Freescale Semiconductor, Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US7105866B2 (en) 2000-07-24 2006-09-12 Freescale Semiconductor, Inc. Heterojunction tunneling diodes and process for fabricating same
US7161227B2 (en) 2001-08-14 2007-01-09 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US7211852B2 (en) 2001-01-19 2007-05-01 Freescale Semiconductor, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US7342276B2 (en) 2001-10-17 2008-03-11 Freescale Semiconductor, Inc. Method and apparatus utilizing monocrystalline insulator
JP2012122259A (ja) * 2010-12-08 2012-06-28 Okumura Corp 泥土圧シールド掘進機の土砂排出装置
JP2023037310A (ja) * 2021-09-03 2023-03-15 地中空間開発株式会社 トンネル掘削機
JP2023138065A (ja) * 2022-03-18 2023-09-29 株式会社奥村組 スクリュコンベアおよびスクリュコンベアが設置されたシールド掘進機の操作方法

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067856B2 (en) 2000-02-10 2006-06-27 Freescale Semiconductor, Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US7005717B2 (en) 2000-05-31 2006-02-28 Freescale Semiconductor, Inc. Semiconductor device and method
US7105866B2 (en) 2000-07-24 2006-09-12 Freescale Semiconductor, Inc. Heterojunction tunneling diodes and process for fabricating same
US7211852B2 (en) 2001-01-19 2007-05-01 Freescale Semiconductor, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US7045815B2 (en) 2001-04-02 2006-05-16 Freescale Semiconductor, Inc. Semiconductor structure exhibiting reduced leakage current and method of fabricating same
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US7161227B2 (en) 2001-08-14 2007-01-09 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US7342276B2 (en) 2001-10-17 2008-03-11 Freescale Semiconductor, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
JP2012122259A (ja) * 2010-12-08 2012-06-28 Okumura Corp 泥土圧シールド掘進機の土砂排出装置
JP2023037310A (ja) * 2021-09-03 2023-03-15 地中空間開発株式会社 トンネル掘削機
JP2023138065A (ja) * 2022-03-18 2023-09-29 株式会社奥村組 スクリュコンベアおよびスクリュコンベアが設置されたシールド掘進機の操作方法

Also Published As

Publication number Publication date
JPS6326480Y2 (OSRAM) 1988-07-18

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