JPS596542A - Gas electrochemical reaction device - Google Patents
Gas electrochemical reaction deviceInfo
- Publication number
- JPS596542A JPS596542A JP11542682A JP11542682A JPS596542A JP S596542 A JPS596542 A JP S596542A JP 11542682 A JP11542682 A JP 11542682A JP 11542682 A JP11542682 A JP 11542682A JP S596542 A JPS596542 A JP S596542A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- reaction
- generated
- energy
- moreover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003487 electrochemical reaction Methods 0.000 title claims description 8
- 238000005530 etching Methods 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 11
- 239000012495 reaction gas Substances 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000013626 chemical specie Substances 0.000 claims description 2
- 230000004913 activation Effects 0.000 claims 1
- 238000001312 dry etching Methods 0.000 abstract description 14
- 238000010894 electron beam technology Methods 0.000 abstract description 9
- 150000002500 ions Chemical class 0.000 abstract description 5
- 150000003254 radicals Chemical class 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052731 fluorine Inorganic materials 0.000 abstract description 2
- 239000011737 fluorine Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 230000001276 controlling effect Effects 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000004458 analytical method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000005837 radical ions Chemical class 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- NLPMQGKZYAYAFE-UHFFFAOYSA-K titanium(iii) fluoride Chemical compound F[Ti](F)F NLPMQGKZYAYAFE-UHFFFAOYSA-K 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、気体電気化学反応装置に係り、特に、ドライ
エツチング装置に使用するのに好適な気体！気化学装置
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a gas electrochemical reaction device, particularly a gas suitable for use in a dry etching device! Regarding vapor chemical equipment.
高密度に集積化さｎ′ｆｃ半導体装置の製造プロセスに
おいて、微細パターン形成のため、従来のウェットエツ
チング技術にかわって高い軸度ｔＳつドライエツチング
技術か開発され、種々のタイプのドライエツチング装置
か検討さ几て＠穴。In the manufacturing process of highly integrated N'FC semiconductor devices, dry etching technology with high axiality tS has been developed to replace the conventional wet etching technology to form fine patterns, and various types of dry etching equipment have been developed. Considered @ hole.
しかしなから、いずれのタイプのドライエツチング装置
にあっても、高周波グロー放′亀によシプラズマを形成
したとキ、樵々のイオン、ラジカルか同時に発生して不
特定なエツチング種を形成するため、棟々の領域のエツ
チング反応か同時に起り、最良のエツチング上書るのに
必要な条件についての制御ないしは最適化か困難であり
、’Ｅｆｃｓ下地との選択比か十分でない、という欠点
か必つ六。However, no matter which type of dry etching equipment is used, when high-frequency glow radiation causes plasma to be formed, ions and radicals from the woodcutter are simultaneously generated to form unspecified etching species. However, the etching reaction in the ridge area occurs simultaneously, it is difficult to control or optimize the conditions necessary for the best etching overwriting, and there is always a drawback that the selectivity with the Efcs substrate is not sufficient. Six.
本発明の目的は、このような欠点を解消し、最良のエツ
チング状態、丁なわち気体電気化学反応會侍るＣとかで
きる気体電気化学反応装置ｉヲ提供するにるる。The object of the present invention is to overcome these drawbacks and to provide a gas electrochemical reaction apparatus which can provide the best etching conditions, ie, which can accommodate gas electrochemical reactions.
この目的を達成するため、本発明は、所定レベルのエネ
ルキ？ｒ、保有する荷電粒子を反応ガスに照射すること
に工り、特定の活性化学種だけ全発生させてこＡＫよる
気体電気化学反応だけを生起させるようにしたものであ
る。To achieve this objective, the present invention provides a predetermined level of energy? r. By irradiating the reactive gas with the charged particles it possesses, all of the specific active chemical species are generated, and only the gas electrochemical reaction caused by AK occurs.
以下、本発明を図面に示す実施例にし７ｔかつてさらに
説明する。Hereinafter, the present invention will be further explained using embodiments shown in the drawings.
図は本発明による気体電気化学反応装置金ドライエツチ
ング装置として適用した場合の一実施例を示す概略的説
明図である。The figure is a schematic explanatory diagram showing an embodiment of the gas electrochemical reaction device according to the present invention applied as a gold dry etching device.
図において、エツチング反応室ｌ内にはエツチング対象
膜としての二酸化シリコン（５ｉ０２ ）ｊ［全表面に
形成されたウェハ２かターンテーブル３上に載置されて
収容されている。反応室ｌにはエツチング反応ガスとし
ての４弗化メタンガス（ＯＦ４）か人口４から導入さｎ
１反応室１は排気口５によシ所定の低圧に維持さｎる。In the figure, a wafer 2 with silicon dioxide (5i02) (formed on the entire surface) as a film to be etched is placed on a turntable 3 and accommodated in an etching reaction chamber l. Tetrafluoromethane gas (OF4) as an etching reaction gas was introduced into the reaction chamber l from the population n.
1 The reaction chamber 1 is maintained at a predetermined low pressure by an exhaust port 5.
この反応室１には、後述する特定のエツチング種だけを
発生させる後述する所定レベルのエネルギを保有する電
子を反応室ｌ内の反応ガスに照射する照射手段としての
電子線シャワー照射装置１６が接続さｎている。An electron beam shower irradiation device 16 is connected to the reaction chamber 1 as an irradiation means for irradiating the reaction gas in the reaction chamber 1 with electrons having a predetermined level of energy, which will be described later, to generate only a specific etching species, which will be described later. I'm here.
電子線シャワー照射装置６は、荷電粒子を生成する粒子
生成＠７と、生成さｆした粒子を引き出丁引き出し部８
と、引き出さｒｇｔ粒子の中から必要な電子を選別する
分析部９と、所定レベルのエネルギ１Ｆｒ：保有する電
子に調整する調整部１０と、電子を反応室１の反応ガス
にシャワー状に照射させる照射部１１と、全備えている
。本実施例においては、１２ｅ、Ｖのエネルギ全保有す
る１子が照射さｎる工うに設定されてｈる。The electron beam shower irradiation device 6 includes a particle generation @ 7 that generates charged particles, and a drawer drawer 8 that sends the generated particles.
, an analysis section 9 that selects necessary electrons from extracted RGT particles, an adjustment section 10 that adjusts the energy to a predetermined level of 1Fr:electrons, and a shower-like irradiation of the reaction gas in the reaction chamber 1 with electrons. It is fully equipped with an irradiation section 11. In this embodiment, the setting is such that one child having all the energy of 12e and V is irradiated.
次に作用′？ｒ、説明する。Next is the effect? r, explain.
前述した従来のドライエツチング装置において、裡々の
ラジカル・イオンか同時に発生下るのは、反応ガス（エ
ッチャント）の分子に衝突して励起させる電子の保有す
るエネルギかａｔｏｏ〜数１０ＵＯｅＶと非常に大きい
こと、が原因である。In the conventional dry etching apparatus described above, radical ions are generated simultaneously because the energy possessed by the electrons that collide with and excite the molecules of the reaction gas (etchant) is extremely large, ranging from atoo to several tens of UOeV. , is the cause.
そこで、電子のエネルギを小さく、かつ特定のラジカル
、イオン（エツチング種）の発生に必貴なエネルギと等
しくアルば、特定のエツチング種だけ全発生させること
かでき、不特定なラジカル。Therefore, if the energy of electrons is made smaller and equal to the energy necessary for generating specific radicals and ions (etching species), only specific etching species can be completely generated, and unspecified radicals can be generated.
イオンの全生金抑制することかできる。It is possible to suppress all raw metals of ions.
例えは、５ｔｏｌのドライエツチングでｕ、ＯＦ４から
発生する正の３弗化チタン（ＯＦｍ）かエツチング種で
あシ、励起沸素分子（Ｆ＊）はエツチングの選択比を劣
化逼せる因子となる。したかつて、ＯＦ４から特定のエ
ツチング種であるＯＦｓ＋たけを生成させることかでき
れば、最良のエツチング反応を惹起する仁とかでき、か
つ、選択比を十分に大きく下ることができる。For example, in 5 tol dry etching, the etching species is positive titanium trifluoride (OFm) generated from u and OF4, and excited fluorine molecules (F*) are a factor that deteriorates the etching selectivity. . However, if it were possible to generate a specific etching species, OFs+, from OF4, it would be possible to create seeds that induce the best etching reaction, and to lower the selection ratio sufficiently.
そして、ＣＦ４に加速電子が衝突して各種のラジカル拳
イオンが生成する素過程を整理すると次のようになる。The elementary process in which various radical ions are generated when accelerated electrons collide with CF4 is summarized as follows.
４．８ を 一−→ａｐ’３−十・Ｆ ５．６ 一→ＯＦ３十Ｆ’ ２ を 一一−→ａｙｓ＋ｅＦ＋。4.8 of 1-→ap’3-10・F 5.6 1→OF30F' 2 of 11-→ays+eF+.
１４．８４
そこで、本実施例では、削成のうち、
０Ｆ４０Ｆ ＋、Ｆ
２ｅＶ
全利用して、電子線シャワー発生装置１ｆ１６により、
１２ｅＶＩＣＨＪ鴫整した電子線シャワーを反応室１内
のＯＦ４に照射し、無用のＦ の化１１抑制し、つつ、
ＣＦ３＋のみを選択的に生成せしめるようにし’ｆＣ。14.84 Therefore, in this example, 0F40F + and F 2eV were fully utilized in the ablation, and the electron beam shower generator 1f16 was used to generate
12e VICHJ irradiated the OF4 in the reaction chamber 1 with an electron beam shower, suppressing the formation of unnecessary F2, and
Only CF3+ is selectively generated.
本実施例に工ｎば、ウニノー２における８１０！に良好
なエツチング反応を生起てる８７ｓ のみか生成さｎ
るので、ＳｔＯ，に対して最適粂件下でエツチング反応
か生起し、かつ、選択比全低下させるＦ＊の生成か抑制
さｎるので、選択比か大きくなる。したかつて、高精度
で、かつ安定なドライエツチングか達成さｎる。If this example is used, 810 in UniNo 2! Only 87s is produced which causes a good etching reaction.
Therefore, an etching reaction occurs under optimal conditions for StO, and the generation of F*, which reduces the total selectivity, is suppressed, so the selectivity increases. In the past, highly accurate and stable dry etching has been achieved.
そして、電子線シャワー発生装置ｔ６からエツチング反
応ガスに照射される電子線シャワーの電子か保有するエ
ネルギのレベルを適当に調整することにより、特定のエ
ツチングｍ’ｌｆ−生成さぜることかでき、この特定の
エツチング種の生成を適宜選定することにより、エツチ
ング反応の条件（例えは、速度、プラズマエツチング、
Ｉ５Ｌ応性、不活性イオンエツチング、イオンビームエ
ツチング等の領域、異方性０等方性９選択比）について
の１＆通化制仰を容易に行なうことかできる。By appropriately adjusting the energy level of the electrons of the electron beam shower irradiated onto the etching reaction gas from the electron beam shower generator t6, a specific etching m'lf- can be generated. By appropriately selecting the generation of this particular etching species, the conditions of the etching reaction (e.g., speed, plasma etching,
It is possible to easily perform 1&uniformity control in areas such as I5L reactivity, inert ion etching, ion beam etching, anisotropy (0 isotropy, 9 selectivity).
なお、前記実施例では、５１０２のドライエツチングの
場合につき説明したか、本発明は各積金属やその他の物
質のドライエツチングにも適用することかできる。In the above embodiments, the case of dry etching of 5102 was described, but the present invention can also be applied to dry etching of various laminated metals and other materials.
また、本発明は、ドライエツチング装置に限らず、ａｖ
ｐ装置等のような放電化学反応全利用した放電化学反応
装置全般に適用することか可能である。Furthermore, the present invention is applicable not only to dry etching apparatuses but also to AV etching apparatuses.
It is possible to apply the present invention to general discharge chemical reaction devices that fully utilize discharge chemical reactions, such as p-type devices.
例えば、ＯＶＤ装置においてＳ ｔａ４ガスで８１膜を
気相反応で生成する場合、
４、４ ｅ Ｖ
のうち、ＳｉＨ４□Ｓｉ＋２Ｈｚ、を利用して、４．４
ｅＶの電子線シャワーを８ＬＨ４に照射下ｒＬば、特定
の化学反応種としての８１か生成さｎ１所望の８１膜か
伯らｎる。For example, when producing 81 films using Sta4 gas in a gas phase reaction in an OVD device, out of 4.4 e V, using SiH4□Si+2Hz, 4.4
When 8LH4 is irradiated with an eV electron beam shower, 81 as a specific chemically reactive species is generated from the desired 81 film.
さらに、前記実施例では、荷電粒子として電子を照射す
るようにしたが、他の荷電粒子全照射してもよい。Further, in the above embodiment, electrons are irradiated as charged particles, but other charged particles may also be irradiated entirely.
以上説明したように、本発明によｎば、特定の化学反応
種だけによる化学反応を生起させることかできる。As explained above, according to the present invention, a chemical reaction can be caused only by specific chemically reactive species.
図は本発明による放電化学反応装置ｔ’にドライエツチ
ング装置として通用した場合の一実施例を示す概略的説
明図である。
１・・・反応室、２・・・ウェハ、４・・・反応ガス人
口、５・・・排気口、６・・・電子線シャワー照射装置
、７・・・荷電粒子発生部、８・・・引き出し部、９・
・・分析部、１０・・・調整部、１１・・・照射部。The figure is a schematic explanatory diagram showing an embodiment of the discharge chemical reaction apparatus t' according to the present invention which is used as a dry etching apparatus. DESCRIPTION OF SYMBOLS 1... Reaction chamber, 2... Wafer, 4... Reaction gas population, 5... Exhaust port, 6... Electron beam shower irradiation device, 7... Charged particle generation section, 8...・Drawer part, 9・
...Analysis section, 10...Adjustment section, 11...Irradiation section.
Claims (1)
ネルギを保有する荷電粒子を反応ガスに照射する照射手
段を備えてなる気体電気化学反応装置。 ２、荷電粒子が、負の電子であることを特徴とする特許
軸木の範囲第１項記載の気体電気化学反応装置。 ３、特定の活性化学種か、特定のエツチング種であるこ
とｔ％徴とする臀許精求の範囲第１項記載の槃体電気化
字反応装置。[Scope of Claims] (1) A gas electrochemical reaction device comprising irradiation means for irradiating a reaction gas with charged particles having a predetermined level of energy that generates only a 9% activation type. 2. The gas electrochemical reaction device according to item 1 of the patent tree, wherein the charged particles are negative electrons. 3. The rod electrification reaction device according to item 1, wherein the t% characteristic is a specific active chemical species or a specific etching species.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11542682A JPS596542A (en) | 1982-07-05 | 1982-07-05 | Gas electrochemical reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11542682A JPS596542A (en) | 1982-07-05 | 1982-07-05 | Gas electrochemical reaction device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS596542A true JPS596542A (en) | 1984-01-13 |
Family
ID=14662272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11542682A Pending JPS596542A (en) | 1982-07-05 | 1982-07-05 | Gas electrochemical reaction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS596542A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60216549A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Manufacture of semiconductor device |
| JPS62222633A (en) * | 1986-03-25 | 1987-09-30 | Sharp Corp | Manufacture of semiconductor element |
-
1982
- 1982-07-05 JP JP11542682A patent/JPS596542A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60216549A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Manufacture of semiconductor device |
| JPS62222633A (en) * | 1986-03-25 | 1987-09-30 | Sharp Corp | Manufacture of semiconductor element |
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