JPS5961082A - Light emitting device - Google Patents
Light emitting deviceInfo
- Publication number
- JPS5961082A JPS5961082A JP57169804A JP16980482A JPS5961082A JP S5961082 A JPS5961082 A JP S5961082A JP 57169804 A JP57169804 A JP 57169804A JP 16980482 A JP16980482 A JP 16980482A JP S5961082 A JPS5961082 A JP S5961082A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- emitting diode
- emitting device
- reflecting plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 229940081330 tena Drugs 0.000 claims description 2
- 239000000835 fiber Substances 0.000 abstract description 19
- 230000008878 coupling Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 5
- 238000005859 coupling reaction Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
【発明の詳細な説明】
し発明の技術分野〕
この発明は発光ダイオードを用いた発光装置に係り、特
にガラス、高分子明脂などでできたオプティカルファイ
バーに対して光結合効率の高い発光装置に関する。[Detailed Description of the Invention] Technical Field of the Invention The present invention relates to a light emitting device using a light emitting diode, and more particularly to a light emitting device with high optical coupling efficiency for optical fibers made of glass, polymeric resin, etc. .
カルファイバーに結合するために各種の方法が試みられ
ている。これ等の方法でファイバーに結合する光として
利用されるのは、発光ダイオードの表面発光成分のみか
、あるいは端面発光成分のみである場合がほとんどであ
る。このだめファイバーに結合する光出力が大きくなけ
ればならない用途については、ファイバー結合出力か不
十分である。Various methods have been tried to bond to calfibers. In most cases, only the surface-emitting component or only the edge-emitting component of the light emitting diode is used as the light coupled to the fiber in these methods. For applications where a large amount of optical power is required to be coupled into this useless fiber, the fiber coupling power is insufficient.
ゥれ光ダイオードの端ｕＩＩ発光成分を光反射板で反射
キ、「ることで衣…」方向に向けさせる各種の方法も試
みられている。たとえば特公昭４８−３０７１５号公報
では、平曲上に形′成されているＰ−Ｎ接合の成金面端
はか、接合部に発生する光線を接合部を包囲する周辺に
向って放射させることを可能にして露出されているもの
と、接合面端縁から離隔してこの端縁を包囲し端縁から
導出される光線を上’ｓｒ２ Ｐ −Ｎ ｓｍ合部の平
面に対して実質的に直角の方向に反射させるための反射
装置とを含んでなる発光装置〆ｔが提示されている。し
かし、この公報では当該端縁から導出させる光線を実質
的に直角に反射させるだめの反射装置の構造について放
物面鏡の如きとしか記述されていない。Various methods have also been attempted in which the light emitting component at the end of the light diode is reflected by a light reflecting plate and directed in the direction of the light. For example, in Japanese Patent Publication No. 48-30715, the edge of the plated surface of the P-N junction, which is formed on a flat curve, causes the light rays generated at the joint to radiate toward the periphery surrounding the joint. sr2 P −N sm substantially relative to the plane of the joint surface, and the rays that are spaced apart from and surrounding the edge of the joint surface to allow the rays derived from the edge to A light emitting device is presented, comprising a reflection device for reflecting in a perpendicular direction. However, this publication only describes the structure of the reflecting device, which reflects the light rays emitted from the edge at a substantially right angle, as a parabolic mirror.
さらに他の例として特公昭４７−２４７２０、特公昭５
１−２４８７４、特開昭４８−１０００８３、特開昭４
９−８２２８６、特開昭４９−８２２８７、特開昭４９
−８２２８８、％囲昭４９−８２２８９、特開昭４９−
８２２９１、特開昭５０−５５２８５、特開昭５０−５
５２８２、特開昭５０−７５７９４の各号公報を回転放
物面構造とし、その焦点に発光ダイオードを配置をする
ことによって発光ダイオードの端面発光成分を表面方向
に向けることが示された。しかしこの構造では、発光ダ
イオードの大きさが光である。従ってこれら各号公報で
示されている発光ｇ、置は、遠隔操作機器用光源などと
しては適当であっても、オプティカルファイバーに効率
よく結合する光源としては不適当である。Further examples include Tokuko Sho 47-24720, Tokuko Sho 5
1-24874, Japanese Patent Publication No. 48-100083, Japanese Patent Application Publication No. 4
9-82286, JP-A-49-82287, JP-A-49-Sho.
-82288,% Showa 49-82289, Unexamined Japanese Patent Publication Showa 49-
82291, JP-A-50-55285, JP-A-50-5
5282 and Japanese Patent Application Laid-Open No. 50-75794, it was shown that by using a paraboloid of revolution structure and arranging a light emitting diode at its focal point, the edge light emitting component of the light emitting diode could be directed toward the surface. However, in this structure, the size of the light emitting diode is the light. Therefore, although the light emission g and position shown in each of these publications is suitable as a light source for a remote control device, it is not suitable as a light source that can be efficiently coupled to an optical fiber.
この発明はフーｒイバー結合出力の高い発光装置を提供
するＫある。特にこの発明は発光ダイオードの表面発光
成分も端Ｉｆｉ発光成分も効率よくファイバーに結合す
るための反射板を用い、改良された点にある。The present invention provides a light emitting device with high Fourier coupling output. In particular, the present invention is improved by using a reflector to efficiently couple both the surface emission component and the end Ifi emission component of the light emitting diode to the fiber.
即ちこの発明は、（１１ｍ面が平面をなす光反射板の底
面に発光ダイオードを、そのＰ−Ｎ接合面がＪ底面と平
行で中心が底面の中心とほぼ一致するように載１ｄされ
ている発光装置において、Ｘ軸、ｙ軸を底＋ｔｏ内にと
り、２軸を底面に垂直で且つ中心を通るようにとる時、
光反射板の側面が次式では１了近似される四囲である発
光装置、ｚ＋ａ＝ｂ （１７Ｔｙ ｃｐ （ａ、ｂ、
ｃは正の数）。That is, in this invention, (11m) a light emitting diode is mounted on the bottom surface of a light reflecting plate having a flat surface, and its P-N junction surface is parallel to the J bottom surface, and the center thereof is substantially coincident with the center of the bottom surface (1d). In a light emitting device, when the X axis and the y axis are set within the base +to, and the two axes are set perpendicular to the bottom and passing through the center,
A light emitting device in which the side surface of the light reflecting plate is a quadrilateral which is approximated by 1 in the following equation, z+a=b (17Ty cp (a, b,
c is a positive number).
又は（２） 発光ダイオードがシリコンをドープした
グロウン４７星ガリウムアルばニウムヒ累発光タイオー
ドである第１項に記載の発光装置、又は（３）少くとも
光反射板の内部及び発光ダイオードが上下である第１項
に記載の発光装置にある。or (2) the light emitting device according to item 1, wherein the light emitting diode is a grown 47-star gallium albium arsenide luminescent diode doped with silicon, or (3) at least the inside of the light reflecting plate and the light emitting diode are above and below. In the light emitting device according to item 1.
ファイバーの大きさについては小は直径５０ミクロンメ
ーターのグレエイデイドインデックスファイバーから大
は直径３ミリメ一ター以上のファイバー束まで各独存在
する。オプティカルファイバーに光を効率よく結合する
ためには反射板はオプティカルファイバーと同等か小さ
いことが砿η〜い。Regarding the size of the fibers, there are various sizes ranging from small gray-dade index fibers with a diameter of 50 micrometers to large fiber bundles with a diameter of 3 millimeters or more. In order to efficiently couple light to the optical fiber, the reflector must be equal to or smaller than the optical fiber.
発光ダイオードの太きさはほぼ０．３：’）メーター角
から０．６＜’Ｊメーター角の範凹にある。以上の事か
ら反射板を持ちしかもファイバーに効率よく結合する発
光装置で、発光ダイオードの大きさは光反射板の大きさ
に対して無視できない。こうした場合には発光ダイオー
ドの大きさを考慮にいれて反射板の設計を行う必要があ
る。The thickness of the light emitting diode is within the range of approximately 0.3:') meter angle to 0.6<'J meter angle. From the above, in a light emitting device that has a reflector and is efficiently coupled to a fiber, the size of the light emitting diode cannot be ignored compared to the size of the light reflector. In such cases, it is necessary to design the reflector by taking the size of the light emitting diode into consideration.
弔１図に光反射板の構造を定義するために光反射板の斜
視図を示す。ｘｓ’／ｓ ｚの直角座標において反射
板の底面の中心が原点となる。Ｘ軸、ｙ軸は底面内にあ
る。Ｚ軸は底面と垂直である。光反射板の側面（Ｉυは
次式であられされる。Figure 1 shows a perspective view of the light reflector to define the structure of the light reflector. In the rectangular coordinates xs'/sz, the center of the bottom surface of the reflector is the origin. The X-axis and y-axis are within the bottom plane. The Z axis is perpendicular to the bottom surface. The side surface (Iυ) of the light reflecting plate is calculated by the following formula.
ｚ十ａ＝ｂ （ｙ’ ｘ −１−ｙ”−ｃ ）２（ａ、
ｂ、 ｃは正の数）第２図にｘｚ平凹で見た光反
射板（２３，２３’ ）と発光ダイオード（２１）を示
す。シシはＰ−Ｎ接合面であり、（至）及び（２４勺は
それぞれＰ−Ｎ接合面の端縁である。右側の反射＆１２
６はｚ＋ａ＝＝ｂ （Ｘ−ｃ ）２であられされる。そ
の焦点は０４１とほぼ一致することが望しい。左側の反
射板（２３’）ｆ’ｊ ｚ＋ａ＝＝ｂ （ｘ−ｔ−ｃ
）”であネ
望梢〜いａ、 、Ｃの値を発光ダイオードＱυ及び光反
射板曹、（２３’）の構造から求めるととＫする。z tena=b (y' x -1-y"-c)2(a,
(b, c are positive numbers) Figure 2 shows the light reflecting plate (23, 23') and the light emitting diode (21) viewed from an xz plano-concave plane. Shishi is the P-N joint surface, and (to) and (24) are the edges of the P-N joint surface, respectively.The reflection on the right &12
6 is expressed as z+a==b (X-c)2. It is desirable that its focus substantially coincides with 041. Left reflector (23') f'j z+a==b (x-t-c
)'', and the values of a, , and C are determined from the structure of the light emitting diode Qυ and the light reflecting plate (23').
光反射板の低面の直径を２ｒい発光ダイオード１２１）
の−辺の大きさを２ｒ２、光反射板の底面から発光ダイ
オードのＰ−Ｎ接合部１２功までの距離をり、とする。Light emitting diode 121) whose diameter of the lower surface of the light reflector is 2r
The size of the - side is 2r2, and the distance from the bottom of the light reflecting plate to the PN junction of the light emitting diode is 12r2.
ａ、ｂ、ｃｆま次式であられされる値とほぼ一致するこ
シ
とが望しい。It is desirable that a, b, cf substantially match the values given by the following equation.
−ｈ、＋ｓ／１１［「扉：が７
Ｃ二ｒ２
〔発明の実施例〕
（１）発光ダイオード０υとしてはシリコンをドープし
たグロウンイン型ガリウムアルミニウムヒ素発光ダイオ
ードを使用する。−辺の大きさく ２ ｒｔ ）は、０
．３ミＩＪメーターである。反射板の底面の直径（２ｒ
ｔ）接合部四１での美質的な距離（ｈ、）は０１ぼりメ
ーターである。このｕ、１反射板の１１Ｊｔｌ而を次式
であられされるものに製作する。-h, +s/11 [Door: 7 C2r2 [Embodiment of the invention] (1) As the light emitting diode 0υ, a grown-in type gallium aluminum arsenide light emitting diode doped with silicon is used. 2 rt ) is 0
．． It is a 3mm IJ meter. The diameter of the bottom of the reflector (2r
t) The aesthetic distance (h,) at the junction 41 is 01 meters. The 11Jtl of this u, 1 reflector is manufactured using the following formula.
ｚ ＋ ０．０２ ””２．Ｉ Ｘ （Ｖ５コ］ｊ１−
０．１５ ＞” （ｉリメーター）反射板の最大直往（
２ｒｓ）を１．６”リメーター、反射板の深さくり、）
を０８７ｉリメーターとする。光反射板の内部及び発光
ダイオードＣａ１）は、透明エポキシ樹脂でおおわれて
いる。光反射板の側面の表面粗さは１ばクロンメーター
以下である。z + 0.02 ””2. I X (V5ko) j1-
0.15 >” (i-remeter) Maximum direct movement of the reflector (
2rs) to 1.6” remeter, reduce the depth of the reflector,)
Let be the 087i remeter. The inside of the light reflecting plate and the light emitting diode Ca1) are covered with transparent epoxy resin. The surface roughness of the side surface of the light reflecting plate is 1 barron meter or less.
この発光表直にパルス幅５マイクロ秒、パルス繰シ返し
２０ミリ秒、パルス高さ１アンペアの電流を流す。その
時反射板の前（５）方向に発するパルス光出力は、１９
０ミリワツトである。コアが合成石英でできており、ク
ラッドがポリマーででさていて、開口数０．５、バンキ
ング蟹度６０チ、直径３ミリメーター、長さ７メーター
のファイバー束に結合する光出力、即ちファイバー最終
端で飼足する光出力は４４ξリワツトでめる。このファ
イバー結合出力は、反射板の６４１１面の構造をｚ＋ａ
＝＝ ｂ （ｘ２＋ｙ”）（定義は前記と回じ）であら
れされる回転放物面構造とし、その焦点に発光ダイオー
ドを配置して同様に作製した比較例発光装置のファイバ
ー結合出力に比べ、少くとも２倍以上である。A current with a pulse width of 5 microseconds, a pulse repetition of 20 milliseconds, and a pulse height of 1 ampere is applied directly to this light emission surface. At that time, the pulsed light output emitted in the front (5) direction of the reflector is 19
It is 0 milliwatts. A fiber whose core is made of synthetic quartz and whose cladding is made of polymer, and which couples into a fiber bundle with a numerical aperture of 0.5, a banking degree of 60 degrees, a diameter of 3 millimeters, and a length of 7 meters. The light output at the final end is determined by 44ξ rewatts. This fiber-coupled output transforms the structure of the 6411 plane of the reflector into z+a
== b (x2+y") (definition is as above) compared to the fiber-coupled output of a comparative example light-emitting device made in the same way with a paraboloid of revolution structure and a light-emitting diode placed at its focal point. It is at least twice as large.
８４４３図にこの実施例の発光装置の発光出力分布Ｃ（
Ｉ）を示す。発光出力の半値巾Ｖｉ４５°Ｃである。こ
のことから表面発光成分も端面発光成分も光反射板によ
ってほぼ一方向に向けられていることがわかる。従って
ファイバー結合出力は大になっている。Figure 8443 shows the light emission output distribution C (
I) is shown. The half-value width Vi of the light emission output is 45°C. This shows that both the surface-emitting component and the edge-emitting component are directed in substantially one direction by the light reflecting plate. Therefore, the fiber coupling output is large.
第４図は反射板全回転放物［ｍ構造とした時の比較例発
光出力分布（４Ｉ）を示しているものである。この拍出
出力分布はハート型となり、発光出力の半値巾は８８°
で大である。従ってファイバー結合出力は小さくなる。FIG. 4 shows the light emission output distribution (4I) of a comparative example when the reflector has a full rotation paraboloid [m structure]. This ejection output distribution is heart-shaped, and the half-width of the emission output is 88°.
It is large. Therefore, the fiber-coupled power becomes small.
（２）発光タイオードＶυとしてシリコンをドープした
グロウンイン型ガリウムアルミニウムヒ素発光ダイオー
ド：１：１更用する。２ｒｚを０．６５ξリメーター、
２ｒｌを１．０だリメーター、ｈ、をＯ，１５＃リメー
ターとして反射板を側面が
ｚ＋０．０４ ＝１．３ （〆τ＋Ｙ”−０，３３）”
となるように製作する。２ｒ３を２．２ぼりメーターと
しり、を０．７３ミリメーターとする。光反射板の内部
及び発光ダイオード０υは、透明シリコーンでおおわれ
ている。光反射板の側面の表面粗さは、１ξクロンメー
ター以下である。(2) A grown-in type gallium aluminum arsenide light emitting diode doped with silicon is used as the light emitting diode Vυ: 1:1. 2rz by 0.65ξ remeter,
2rl is a 1.0 remeter, h is O, 15# remeter, and the side surface of the reflector is z+0.04 = 1.3 (〆τ+Y"-0,33)"
Manufactured so that Let 2r3 be 2.2 mm and be 0.73 mm. The inside of the light reflection plate and the light emitting diode 0υ are covered with transparent silicone. The surface roughness of the side surface of the light reflecting plate is 1ξ chronmeter or less.
この発光装置にパルス幅５マイクロ秒、パルス繰り返し
２０ミリ秒パルス高さ４アンペアの電流を流す。この時
反射板の前面方向に発するｌξルス光出出カバ７２０ε
リワツトある。合成石英製コア、ポリマー製クラッド、
開口数０．５、バッキング密度６０チ、直径３ξリメー
ター、良さ７メーターのファイバー束に結合する光出力
は、１３０ミＩＪワツトである。他の特性は同じで直径
のみが２ミリメーターと異なるファイバー束に結合する
光出力に、１００ミリワツトである。直径が１５εリメ
ーターのファイバー束に結合する光出力は８０ミリワツ
トである。A current with a pulse width of 5 microseconds, a pulse repetition of 20 milliseconds, and a pulse height of 4 amperes is applied to this light emitting device. At this time, the lξ las light emitting cover 720ε is emitted toward the front surface of the reflector.
There is rewatt. Synthetic quartz core, polymer cladding,
The light output coupled into a fiber bundle with a numerical aperture of 0.5, a backing density of 60 inches, a diameter of 3ξ diameter, and a height of 7 meters is 130 mm IJ watts. The optical power coupled into the fiber bundle, which has other characteristics the same and differs only in diameter by 2 millimeters, is 100 milliwatts. The optical power coupled into the fiber bundle with a diameter of 15 epsilon is 80 milliwatts.
反射板の材買としては銅、アルミニウムなどの金属が望
しく、又それらの上にメッキをほどこしたものでもよい
。The material for the reflective plate is preferably metal such as copper or aluminum, or may be plated on top of these metals.
し発明の効果〕
上述のように光反射板の構造を設計すると、ファイバー
結合出力の＾い発光装置を製造できる。[Effects of the Invention] By designing the structure of the light reflecting plate as described above, a light emitting device with a high fiber-coupled output can be manufactured.
第１図は光反射板の構造を定在するだめの光反射板斜視
図、第２図はｘｚ平而面見た光反射板と発光ダイオード
断面図、第３図は実施例発光装置の発光出力分布、号ト
ξｍ ４図は反射板の側面の構造を回転放物面とした比
較例発光装置の発光出力分布である。
第１図及び第２図において、０υは光反射板の側面、シ
ｌｌは発光ダイオード、四はＰ−Ｎ接合部、局及び（２
３勺は光反射板の側■、Ｑ４Ｊ及び（２４’）はそれぞ
れＰ−Ｎ接合面の一端縁、Ｇυ及び（４１）は発光出力
分布である。
代理人 弁理士 井 上 −男
第１図
χ
第 ３ 図
第 ２ ス
人Fig. 1 is a perspective view of the structure of the light reflecting plate, Fig. 2 is a sectional view of the light reflecting plate and the light emitting diode from an xz perspective, and Fig. 3 is the light emission of the example light emitting device. Output distribution, number ξm Figure 4 shows the light emission output distribution of a comparative example light emitting device in which the structure of the side surface of the reflecting plate is a paraboloid of revolution. In Figures 1 and 2, 0υ is the side surface of the light reflecting plate, sill is the light emitting diode, 4 is the P-N junction, the center and (2
3 is the side of the light reflecting plate, Q4J and (24') are one edge of the P-N junction surface, and Gυ and (41) are the light emission output distributions. Agent Patent Attorney Inoue - Male Figure 1 χ Figure 3 Figure 2 Person
Claims (1)
ードを、そのＰ−ＮＭ合而面底面と平行で中心が肌１ｆ
ｉｉの中心とほぼ一致するように載置されている発光装
置１ｔにおいて、Ｘ軸、ｙ （１＋を底面内にとり、Ｚ
軸を底面に４Ｃ直で且つ中心を通るようにとる時、光反
射板のτＩＩＩ ＋ｆｆｉが次式でほぼ近似される曲面
であることを特徴とする発光装置。 ｚ十ａ＝ｂ （）／ｘ２＋ｙ”−ｅ）χ （ａ、ｂ、ｃ
は正の数）（２）発光ダイオードがシリコンをドープし
たグロウンイン型ガリウムアルミニウムヒ素発光ダイオ
ードであることを特徴とする特許請求の範囲第１項にＭ
ｒ２載の発光装置。 （３）少くとも光反射板の内部及び発光ダイオードてい
ることを特徴とする特許請求の範囲第１項に記載の発光
装置。 （４）光反射板の１１１１面の表面粗さが発光ダイオー
ド二二詣４波長以下であることを特徴とする特許請求の
範囲８１４１項に記載の発光装置。[Claims] (117) A light emitting diode is mounted on the bottom surface of a flat light reflecting plate, and the center is parallel to the bottom surface of the P-NM surface and the skin 1f.
In the light emitting device 1t placed so as to almost coincide with the center of ii,
A light emitting device characterized in that when the axis is taken to be perpendicular to the bottom surface and passing through the center, the light reflecting plate has a curved surface where τIII +ffi is approximately approximated by the following equation. z tena=b ()/x2+y"-e)χ (a, b, c
is a positive number) (2) The light emitting diode is a grown-in type gallium aluminum arsenide light emitting diode doped with silicon.
Light emitting device mounted on r2. (3) The light-emitting device according to claim 1, characterized in that the light-emitting device includes at least the inside of the light reflecting plate and the light-emitting diode. (4) The light emitting device according to claim 8141, wherein the surface roughness of the 1111 surface of the light reflecting plate is equal to or less than 22 wavelengths or less than 4 wavelengths of a light emitting diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57169804A JPS5961082A (en) | 1982-09-30 | 1982-09-30 | Light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57169804A JPS5961082A (en) | 1982-09-30 | 1982-09-30 | Light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5961082A true JPS5961082A (en) | 1984-04-07 |
| JPH0444434B2 JPH0444434B2 (en) | 1992-07-21 |
Family
ID=15893198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57169804A Granted JPS5961082A (en) | 1982-09-30 | 1982-09-30 | Light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961082A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006100917A1 (en) * | 2005-03-22 | 2006-09-28 | Tanaka Kikinzoku Kogyo K.K. | Light emitting element reflector, manufacturing method thereof, and light emitting device using the reflector |
-
1982
- 1982-09-30 JP JP57169804A patent/JPS5961082A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006100917A1 (en) * | 2005-03-22 | 2006-09-28 | Tanaka Kikinzoku Kogyo K.K. | Light emitting element reflector, manufacturing method thereof, and light emitting device using the reflector |
| JP4823214B2 (en) * | 2005-03-22 | 2011-11-24 | 田中貴金属工業株式会社 | REFLECTOR FOR LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, AND LIGHT EMITTING DEVICE HAVING THE REFLECTOR |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0444434B2 (en) | 1992-07-21 |
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