JPS5957481A - Photoelectric conversion element - Google Patents
Photoelectric conversion elementInfo
- Publication number
- JPS5957481A JPS5957481A JP57168137A JP16813782A JPS5957481A JP S5957481 A JPS5957481 A JP S5957481A JP 57168137 A JP57168137 A JP 57168137A JP 16813782 A JP16813782 A JP 16813782A JP S5957481 A JPS5957481 A JP S5957481A
- Authority
- JP
- Japan
- Prior art keywords
- conversion element
- photoelectric conversion
- transparent electrode
- thickness
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 abstract description 15
- 230000035945 sensitivity Effects 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052909 inorganic silicate Inorganic materials 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- QYHNIMDZIYANJH-UHFFFAOYSA-N diindium Chemical compound [In]#[In] QYHNIMDZIYANJH-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 101150017268 secM gene Proteins 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は光導電体として非晶質シリコンを用いた光電
変換素子に関し、特に該光電変換素子の分光感度特性の
改善に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoelectric conversion element using amorphous silicon as a photoconductor, and particularly relates to improving the spectral sensitivity characteristics of the photoelectric conversion element.
一般に、ファクシミリ等の原稿読取装置にはシリコンエ
Ｃセンサが用いられているが、該シリコンエＣセンサは
センサ長／ｌ’ ２０ ｍｍ乃至３０−と短いことから
光路長の長い縮小光学系を必要とし、装置の小型化を図
る上で問題になっていた。Generally, a silicone C sensor is used in document reading devices such as facsimile machines, but since the silicone C sensor has a short sensor length /l' of 20 mm to 30 mm, it requires a reduction optical system with a long optical path length. This has been a problem when trying to downsize the device.
そこで最近は、縮小光学系を必要としない、すなわち原
稿幅と同じ長さを有する長尺の薄膜センサの開発が試み
られている。この代表的なものとして、光導電体に非晶
質シリコンを用い、これを透ＥｉＡ電極と金属電極とで
はさんだす′ンドイッチ型のセンサがある。Therefore, recently, attempts have been made to develop a long thin film sensor that does not require a reduction optical system, that is, has the same length as the original width. A typical example of this is an inditch type sensor in which amorphous silicon is used as a photoconductor and is sandwiched between a transparent EiA electrode and a metal electrode.
ところで、このような非晶質シリコンを用いたサンドイ
ッチ型のセンサは、０．１ ｍ５ｅｃ以下の光応答性馨
もち、かつ２０Ｏｒ以上の耐熱性を有することわら実用
的なセンサとして有望であるが、いまだ開発途上にあっ
て特に分光感度特性に対する配慮は不十分であった。Incidentally, such a sandwich type sensor using amorphous silicon is promising as a practical sensor as it has a photoresponsiveness of 0.1 m5ec or less and a heat resistance of 20Or or more. Since it is still in the development stage, there has been insufficient consideration given to spectral sensitivity characteristics.
この発明は上記実情に鑑みてなされたものであり、光導
電体として非晶質シリコンを用いた光電変換素子であっ
て、使用する光源の波長特性に適合する分光感度特性を
有する光電変換素子を提供することを目的とする。This invention has been made in view of the above circumstances, and provides a photoelectric conversion element that uses amorphous silicon as a photoconductor and has spectral sensitivity characteristics that match the wavelength characteristics of the light source used. The purpose is to provide.
すなわちこの発明は、上記非晶質シリコンの上面に着膜
する透明電極の膜厚な、可視領域である４０００Ａ乃至
７０００Ａの波長領域でその反射が極小となる厚さ、例
えば４００Ａ乃至１０００Ａの厚さとすることにより、
該透明電極が干渉フィルタの役割も兼ねることとなって
この光電変換素子と゛しての分光感度特性も実際に使用
する光源の波長特性に良好に適合するようになることに
着目し、基板上に所定形状に形成した金属電極の上から
光導電体として非晶質シリコンヲ漸膜した後、この上面
に例えば上記４００Ａ乃至１０００Ａの膜厚で透明電極
を着膜して光電変換素子を形成するようにしたものであ
る。なお、この透明電極としては酸化インジウムスズ薄
膜を用いることが好ましい。That is, the present invention provides a film thickness of the transparent electrode deposited on the upper surface of the amorphous silicon, such that the reflection is minimal in the visible wavelength range of 4000A to 7000A, for example, a thickness of 400A to 1000A. By doing so,
Focusing on the fact that the transparent electrode also serves as an interference filter, the spectral sensitivity characteristics of this photoelectric conversion element will match well with the wavelength characteristics of the light source actually used, and After gradually forming a film of amorphous silicon as a photoconductor on a metal electrode formed in a predetermined shape, a transparent electrode is formed on the upper surface with a film thickness of, for example, 400A to 1000A to form a photoelectric conversion element. This is what I did. Note that it is preferable to use an indium tin oxide thin film as this transparent electrode.
以下、この発明にがかる光電変換素子を添附図面に示す
実施例にしたがって詳ａＫ説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a photoelectric conversion element according to the present invention will be described in detail with reference to embodiments shown in the accompanying drawings.
はじめに・第１図を参照してこの発明にがかる光電変換
素子の製造方法を説明する。なお、第１図はこの発明に
かかる光電変換素子の製造方法をその製造工程にしたｈ
′−って示すものであり、第１図（ａ）に金属電極の形
成態様を、第１図（ｂ）に光導電体の形成態様を、また
第１図（Ｃ）に透明電極の形成態様をそれぞれ示Ｊ−０
ここでは光導電体としての非晶質シリコンをはさむ金属
電極にクロム（Ｏｒ）を、また透明電極にインジウム（
Ｉｎ）とスズ（Ｓｎ）との酸化物をそれぞれ使用する場
合を例にとって説明する。Introduction: A method for manufacturing a photoelectric conversion element according to the present invention will be explained with reference to FIG. Note that FIG. 1 shows a manufacturing process using the method for manufacturing a photoelectric conversion element according to the present invention.
Figure 1(a) shows the formation of the metal electrode, Figure 1(b) shows the formation of the photoconductor, and Figure 1(C) shows the formation of the transparent electrode. Chromium (Or) is used as the metal electrode sandwiching amorphous silicon as a photoconductor, and indium (Indium) is used as the transparent electrode.
An example will be explained in which oxides of In) and tin (Sn) are used.
まずはじめに、ガラス等の絶縁基板１上にクロム（Ｃｒ
）を３００ＯＡ程電子ビ一ム蒸着し、この後例えばフォ
トリソグラフィ圧よってエツチングを施すことにより第
１図（ａ）に示すような所定パターンの金属電極２を形
成する。次いでその上に光導電体３としての非晶質シリ
コン（ａ−８ｉ：Ｈ）をグロー放電法により約１μｍ着
膜する（第１図（→参照）。なおこの着膜に際゛しては
、１００％シラｙガス（ＥｌｉＨ，）７用いるものとし
、ＲＦ（高周波）パワー２０〜５０Ｗ１ガス流量２０〜
５１ ｓｅｃＭ（標準ａｃ分〕、圧力０．２〜０．５’
ｒｏｒｒ、基板視度２００〜３００ｔ、’の条件で３０
分乃至１時間程行なうのが好ましい。そして最後に、透
明電極４ＹＤＯ（直流）スパッタリング法により４００
〜１００ＯＡ Ｍ膜する（第１図（Ｃ）参照）。First of all, chromium (Cr) is placed on an insulating substrate 1 such as glass.
) is electron beam evaporated to a thickness of about 300 OA, and then etched using, for example, photolithography pressure to form a metal electrode 2 in a predetermined pattern as shown in FIG. 1(a). Next, a film of about 1 μm of amorphous silicon (a-8i:H) as the photoconductor 3 is deposited on the photoconductor 3 by a glow discharge method (see Fig. 1 (→). , 100% Sily gas (EliH,) 7 shall be used, RF (high frequency) power 20~50W1 gas flow rate 20~
51 secM (standard ac minute), pressure 0.2-0.5'
rorr, board diopter 200-300t, 30 under the condition of '
It is preferable to carry out the treatment for about one minute to one hour. Finally, the transparent electrode 4YDO (direct current) sputtering method
~100OAM film (see FIG. 1(C)).
なおこの際のターゲットには酸化インジウムスズ（９０
ｍｏｌ！％工ｎＦＯ３＋ １０ｍ０ｊ？９ｏＳｎＯｔ
）を用いるものとし、着膜条件はＤＣパワー１５０〜２
００Ｗ。The target at this time was indium tin oxide (90
Mol! %Eng nFO3+ 10m0j? 9oSnOt
), and the film deposition conditions are DC power 150~2
00W.
アルゴン（Ａｒ）と酸素（０りとの全ガス圧１〜５ Ｘ
Ｉ Ｑ ’Ｔｏｒｒ、酸素分圧１〜２ ＸＩＱ ’Ｔ
ｏｒｒとする。Total gas pressure of argon (Ar) and oxygen (0)
I Q 'Torr, oxygen partial pressure 1-2 XIQ 'T
orr.
次に、このようＫして製造した光電変換素子のセンサ面
での反射スペクトルの波長特性についてその測定結果を
第２図に示す。ただし同第２図において、破線で示すＬ
ｌは上記透明電極４の）膜厚を５５０Ａとしたときの反
射スペクトラムの波長特性を示す特性曲線、一点鎖線で
示すＬ２は上記透明電極４の膜厚を８５ＯＡとしたとき
の反射スペクトラムの波長特性を示す特性曲線、実線で
示すＬ３は上記透明電極４を着膜しなかった場合、すな
わち光導電体３としての非晶質シリコン膜面における反
射スペクトラムの波長特性を示す特性曲線である。Next, FIG. 2 shows the measurement results of the wavelength characteristics of the reflection spectrum on the sensor surface of the photoelectric conversion element manufactured in this manner. However, in Figure 2, L shown by the broken line
l is a characteristic curve showing the wavelength characteristics of the reflection spectrum when the film thickness of the transparent electrode 4 is 550A, and L2 shown by a dashed dotted line is the wavelength characteristic of the reflection spectrum when the film thickness of the transparent electrode 4 is 85OA. The characteristic curve L3 shown by a solid line is a characteristic curve showing the wavelength characteristics of the reflection spectrum on the amorphous silicon film surface as the photoconductor 3, when the transparent electrode 4 is not deposited.
さて同第２図をみると、少なくとも透明電極４を着膜す
ることによってセンサ面での反射率が大幅に減少するこ
とがわかる。また、特に透明電極４の膜厚を５５０Ａと
したときには約＋１００又の波長で（曲線ｂ１参照）、
同じ（透明電極波長で（曲線Ｌ２参照）それぞれ反射率
がほぼ０％となっている。これは、上記透明電極４が干
渉フィルタとしての役割を兼ね具えていることを裏付け
る重要な特性である。Now, looking at FIG. 2, it can be seen that by depositing at least the transparent electrode 4, the reflectance on the sensor surface is significantly reduced. In addition, especially when the thickness of the transparent electrode 4 is 550A, at a wavelength of about +100 (see curve b1),
At the same transparent electrode wavelength (see curve L2), the reflectance is approximately 0%. This is an important characteristic that proves that the transparent electrode 4 also serves as an interference filter.
また第３図は、上述した透明電極４の膜厚を５５０Ａと
した光電変換素子と、８５０人とした光電変換素子との
それぞれの分光感度特性についてその測定結果を示すも
のであり、先の第２図と同様、破線で示す曲線Ｌｌで透
明電極４の膜厚を５５０Ａとした光電変換素子の分光感
度特性を、一点鎖線で示す曲線Ｌ２で透明電極４の膜厚
を８５０″Ａとした光電変換素子の分光感度特性をそれ
ぞれ示している。Furthermore, FIG. 3 shows the measurement results of the spectral sensitivity characteristics of the photoelectric conversion element with the transparent electrode 4 having a film thickness of 550A and the photoelectric conversion element with 850 people. Similarly to Figure 2, the curve Ll shown by the broken line shows the spectral sensitivity characteristics of the photoelectric conversion element when the thickness of the transparent electrode 4 is 550A, and the curve L2 shown by the dashed dotted line shows the spectral sensitivity characteristics of the photoelectric conversion element when the film thickness of the transparent electrode 4 is 850''A. The spectral sensitivity characteristics of each conversion element are shown.
この図によれば、第２図に示した反射スペクトラムの波
長特性にそれぞれ対応して、透明電極４の膜厚を５５Ｏ
Ａとした光電変換素子は４０００Ａ付近の比較的短波長
領域でその分光塵が向上しく第３図曲線Ｌ１参照）、透
明電極４の膜厚比較的長波長領域でその分光感度が向上
している（第３図曲線Ｌ２参照）ことがわかる。According to this figure, the film thickness of the transparent electrode 4 is set to 55°, corresponding to the wavelength characteristics of the reflection spectrum shown in FIG.
The photoelectric conversion element designated as A has improved spectral dust in the relatively short wavelength region around 4000A (see curve L1 in Figure 3), and its spectral sensitivity has improved in the relatively long wavelength region with the thickness of the transparent electrode 4. (See curve L2 in Figure 3).
すなわち、使用する光源の光の強度が最大となる波長で
センサ面での反射が極小となる透明電極４の膜厚を求め
れば、光源の光’＋！Ｉｉ度に適合した分光感度特性を
有する光電変換素子を得ることができる。That is, if we find the thickness of the transparent electrode 4 that minimizes reflection on the sensor surface at the wavelength where the intensity of the light from the light source used is maximum, then the light from the light source '+! A photoelectric conversion element having spectral sensitivity characteristics suitable for Ii degrees can be obtained.
実際に、これら透明電極４の膜厚（これをｄとする）と
反射率が極小となる波長（これをλとする）との間には
、
ｎｌ（λ）ａ＝λ／４．（ｎ、 ｃλ））” ＝ ｎ
ｔ（λ）ただし、ｎ、（λ）およびｎ、（λ）は、波長
λにおける透明電極４および光導電体３としての非晶質
シリコンの屈折率。Actually, there is a relationship between the film thickness of the transparent electrode 4 (denoted as d) and the wavelength at which the reflectance becomes minimum (denoted as λ): nl(λ)a=λ/4. (n, cλ))” = n
t(λ) where n, (λ) and n, (λ) are the refractive indexes of amorphous silicon as the transparent electrode 4 and photoconductor 3 at the wavelength λ.
という関係が成り立っており、可視の波長領域である４
０００Ａ〜７０００Ａの領域で該光電変換素子に良好な
分光感度を供する透明電極４の膜厚ｄの値は、先の製造
方法でも示した４００Ａ〜１０００Ａとなる。The following relationship holds true, and the visible wavelength range is 4.
The value of the film thickness d of the transparent electrode 4 that provides good spectral sensitivity to the photoelectric conversion element in the range of 000A to 7000A is 400A to 1000A as shown in the above manufacturing method.
なお、上記実施例においては、酸化インジウムスズをタ
ーゲットとしたＤＣスパッタリング法によって透明電極
４を形成するようにしたが、他に例えば亜鉛（ｚｎ）、
カドミウム（Ｃｄ）、スズ（Ｓｎ）、インジウム（工ｎ
）、アンチモン（ｓｂ）の単体および合金、あるいはこ
れらの酸化物を組成成分としたターゲットを用いたＤＣ
スパッタリング法やＲＦスパッタリング法、さらには上
記材料を蒸着材料に用いた真空蒸着法などによって上記
透明電極４を形成してもよいことは勿論である。In the above embodiment, the transparent electrode 4 was formed by a DC sputtering method using indium tin oxide as a target, but other materials such as zinc (zn),
Cadmium (Cd), tin (Sn), indium (N)
), antimony (sb) alone, alloys, or oxides of these targets.
Of course, the transparent electrode 4 may be formed by a sputtering method, an RF sputtering method, or a vacuum evaporation method using the above-mentioned material as a deposition material.
以上説明したように、この発明にかかる光電変換素子に
よれば、使用する光源の波長特性に良好に適合する分光
感度特性が得られることから、能率の良い駆動が図れる
とともに、特に原稿読取装置に実採用したような場合に
その読取精度の大幅な向上が期待できる。As explained above, according to the photoelectric conversion element of the present invention, it is possible to obtain spectral sensitivity characteristics that suit well the wavelength characteristics of the light source used. When it is actually adopted, it is expected that the reading accuracy will be significantly improved.
第１図はこの発明にがかる光電変換素子の製造方法を段
階的に示す斜視図、第２図および第３図はそれぞれこの
発明Ｋかかる光電変換素子のセンサ而での反射スペクト
ルの波長特性、および分光感度特性を示す線図である。
１・・・絶縁基板、２・・・金属電極、３・・・光導電
体、４・・・透明電極
−３９′
第１図
第２図
第３図
濠 支（Ａ）FIG. 1 is a perspective view showing step-by-step a method for manufacturing a photoelectric conversion element according to the present invention, and FIGS. 2 and 3 respectively show the wavelength characteristics of the reflection spectrum of the photoelectric conversion element according to the present invention in a sensor, and FIG. 3 is a diagram showing spectral sensitivity characteristics. 1... Insulating substrate, 2... Metal electrode, 3... Photoconductor, 4... Transparent electrode -39' Figure 1 Figure 2 Figure 3 Moat Support (A)
Claims (3)
上から光導電体として非晶質シリコンを着膜した後さら
にこの上面に透明電極を着膜して形成する光電変換素子
において、前記透明電極の膜厚を可視の波長領域で反射
の極小をもつ所定の厚さとしたことを特徴とする光電変
換素子。(1) In a photoelectric conversion element formed by depositing amorphous silicon as a photoconductor on a metal electrode formed in a predetermined shape on an insulating substrate, and then depositing a transparent electrode on the upper surface of the amorphous silicon, the transparent A photoelectric conversion element characterized in that the film thickness of the electrode is set to a predetermined thickness that minimizes reflection in the visible wavelength region.
特許請求の範囲第（１）項記載の光電変換素子。(2) The photoelectric conversion element according to claim (1), wherein the predetermined thickness is 400A to 1000A.
用いた特許請求の範囲第（２）項記載の光電変換素子。(3) The photoelectric conversion element according to claim (2), wherein an indium tin oxide thin film is used as the transparent electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57168137A JPS5957481A (en) | 1982-09-27 | 1982-09-27 | Photoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57168137A JPS5957481A (en) | 1982-09-27 | 1982-09-27 | Photoelectric conversion element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5957481A true JPS5957481A (en) | 1984-04-03 |
Family
ID=15862516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57168137A Pending JPS5957481A (en) | 1982-09-27 | 1982-09-27 | Photoelectric conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5957481A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5544793A (en) * | 1978-09-25 | 1980-03-29 | Rca Corp | Amorphous silicon solar battery |
-
1982
- 1982-09-27 JP JP57168137A patent/JPS5957481A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5544793A (en) * | 1978-09-25 | 1980-03-29 | Rca Corp | Amorphous silicon solar battery |
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