JPS5956280A - Magnetic bubble element - Google Patents

Abstract

PURPOSE:To make it possible that propagation paths form patterns independent of each other, by arranging the propagation path, which is formed with ion implantation in a magnetic bubble crystal, and the propagation path, which consists of a magnetic pattern such as a Permalloy pattern having a layer constitution different from the magnetic bubble crystal face, very closely in the direction of a plane. CONSTITUTION:A propagation path 13 consisting of a chevron pattern is constituted with Permalloy, and bubbles are transferred in an area 10, which is subjected to ion implantation, along a pattern 14 on boundaries between the area 10 and the area which is not subjected to ion implantation. A propagation path 15 formed in the direction crossing the boundary pattern 14 of the ion implantation layer is constituted with a Permalloy pattern. When a driving magnetic field HD is rotated counterclockwise, the right end of the boundary pattern 14 of the ion implantation layer and the propagation path 15 are the input end of information, and the left end of the propagation path 13 is the output end of AND information, and the left end of the boundary pattern 14 of the ion implantation layer is the output end of OR information.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to the structure of a magnetic bubble element, and particularly to a high-density magnetic bubble element whose logic operation and the like of the magnetic bubble are reliable.

(Background of BL technology) Magnetic bubbles (
(abbreviated as "1 bubble" below) or logical operation -U
In this case, it is necessary to set the gap between each pattern to a desired minute gap, but in reality, there is a patterning technique-1-eye space, which can only create a gap of about 1 μm. As a result, the reality is that bubbles cannot be controlled accurately or that other countermeasures are being taken.

(C) Prior art and its problems Conventionally, when constructing a logic circuit by utilizing the repulsive force between bubbles, a pattern configuration as shown in FIG. 1 is used.

In this figure, the upper propagation path 1 and the -F side propagation 1/Jl 2
However, they merge in the middle and become ζ one propagation lI'83. The right end of the upper and lower propagation paths 1.2 is the input end, and the one merging propagation path 3 is the output end. And two upper and lower propagation V8
A propagation path 4 leading to another output end is connected to the left end of 1.2, where the chevron patterns are closest. These propagation paths 1, 2.3.4 are composed of a total ζ Hermalloy pattern.

In this logic circuit, propagation path 3 becomes an output of OR logic (011), and propagation path 4 becomes an output of UNl,' logic. Now, due to the rotating magnetic field +1d, the bubble is propagated by the -1 law 1-81
If the bubble is transmitted from propagation path 1-
It is transferred to the propagation path 3 and sent out to the left end output end of the propagation path 3. Also, when it is transferred from the lower propagation path 2, it is similarly transferred from the propagation path 2 to the propagation path 3, ζ, and sent to the left end output end of the propagation path 3. When pulls are transferred from both the upper and lower propagation paths 1 and 2 at the same time, the propagation path],
When reaching the position of the closest chevron pattern on the left end of M34, the bubbles repel each other, and the bubble on the lower propagation path 2 is bounced off to another propagation path M34,
It is sent out from the lower output end of the propagation path 4.

Furthermore, the bubble on the upper propagation path I is transferred to the propagation path 3 and sent out from the leftmost output end. Therefore, when a bubble is manually input to either the upper or lower propagation path I or 2, it is directly output from the propagation path 1i83, and even when a bubble is input from both the upper or lower propagation path 1.2 at the same time, it is output from the propagation path 3. Therefore, the output of the OR logic is 111 from the 4ttt path 3. Further, since the propagation path 4 outputs only when bubbles are input from both the upper and lower propagations 1?81.2, AND information can be obtained from the propagation path 4.

By the way, for the left bH:H pattern of propagation path 1.2, in order to ensure bubble repulsion, the pattern gap (1) should be as small as possible, but if permalloy is vapor-deposited, Since the transfer pattern is formed by length etching, in the case of a permalloy pattern, it is extremely difficult to form a gear of lμIn or less with the current technology.

Furthermore, FIG. 2 shows an example of a conventional gate between the major line M and the minor loop In.
Unit pattern 5 and picax-like pattern 6 forming n
A bar pattern 7.8 is arranged between C and C. In order to increase memory capacity, progress is being made in making transfer patterns and bubbles smaller, but in order to transfer bubbles reliably, the gap between each pattern must also be made sufficiently small according to the bubble diameter.41. However, there is a limit to the miniaturization of the gap between patterns 5 and 8 having different shapes. Immediately from the previous year, 1. Since the gap size is determined by the resolution of the g11 light and there is a minimum value, it is impossible to form a gap larger than 111 m, which is an obstacle to human quantification.

(d+Object of the invention) The present invention aims to solve problems such as the loop in the conventional magnetic bubble element and to enable gears between each pattern to be configured arbitrarily. do.

FI1 Structure of the Invention In order to achieve this object, the present invention utilizes a propagation path created by ion implantation in a magnetic bubble crystal, and a perm 1 noise pattern, etc., which has a layer structure different from the magnetic bubble crystal plane. The propagation path formed by the magnetic pattern has portions that are arranged extremely close to each other in the plane direction, so that desired characteristics can be obtained.

(Example of the f1 invention) Next, how the magnetic bubble element according to the invention is actually implemented will be explained using an example. ff53121 is a 101-plane view showing an example of the layer structure according to the invention. Reference numeral 9 denotes a bubble crystal, on which an ion insulator layer 10 is partially formed by ion implantation, and a bar 70 pattern 12 is formed thereon via an insulating layer 11 such as 5 inz. When forming a pattern with ion implantation > l1410 on ), bubbles are transferred along the boundary (111) between the ion implantation layer and the non-ion implanted region, so a propagation path is formed with the ion implantation layer Irj. Since the ion implantation layer 10 and the permalloy pattern 12 for each ζ have different layer configurations, the gap d in the plane direction between the ion implantation layer 10 and the permalloy pattern 12 can be arbitrarily formed. be able to.

FIG. 4 shows an example in which a logic circuit corresponding to FIG. 1 is constructed using such a two-layer power formula. The propagation path I3, which is made up of a continuous pattern, is made up of a permanent pattern. Reference numeral 10 denotes an ion-implanted region, and bubbles are transferred along a pattern 14 at the boundary with a non-ion-implanted region. However, the ion insulator layer 10 is
Since the magnetic force is weaker than that of the Perm 1 Neutral pattern, the bubble retention force of 4J is relatively weak. Reference numeral 15 denotes a propagation path formed in a direction intersecting the boundary pattern 14 of the ion implantation layer, and is composed of a permanent pattern (assuming that the driving magnetic field 11cl is rotating counterclockwise). Then, the right end of the boundary pattern 14 of the ion insulator layer and the propagation path 1
5 is the input end of the information, the left && of the propagation path construction 3 is the output end of the information 1, and the left end of the boundary pattern I4 of the ion implant layer is the output end of the OR information. Now, when a bubble serving as information is input from the propagation M&l 5, the bubble is transferred to the boundary pattern 14 side of the ion implantation layer by the driving magnetic field, and thereafter moves to the left along the boundary pattern 14. l1il'\Transferred/output. When a bubble enters from the right end of the boundary pattern 14 of the ion implantation layer,
It is transferred to the left end along the boundary pattern 14 and output.

When a bubble enters from both the propagation path 15 and the boundary pattern 4, at the point where the propagation path 15 intersects the boundary pattern 14 of the ion implant layer, the boundary pattern of the ion implant 74 with weak magnetic force is caused by the anti-light force of the bubble. The bubble on the 14 side is jumped to the propagation path 13 side of the permalloy pattern, and the bubble is inputted as a transmission 1) 1/δI3. Since the bubble input from the propagation path 15 side is output to the left end along the boundary pattern 14 of the ion implantation layer, only the O'1 information is output from the left end of the boundary pattern I4.

In such a configuration, it is necessary to form the gap d between the boundary pattern 14 of the ion implant layer and the propagation path 15 to be high and narrow in order to repel bubbles. Since the pattern 14 and the permalloy pattern M315 have different layer configurations, the gap d can be easily set as desired.

FIG. 5 is an example in which a function corresponding to the transfer 1/R between part of the data 1 and the minor loop shown in FIG. 2 is configured according to the present invention. In this example, the minor loop m is
The boundary pattern is 41/j, and the other bar patterns 7 and 8 and Picasso-like patterns 6 and 6 are made up of harmaly patterns, but which pattern is made up of the ion insulator layer depends on the game guide. You can choose freely depending on the case.

(G+Effects of the Invention As described above, according to the present invention, magnetic) <Pull crystal created by ion implantation and perm with a layer structure different from the magnetic bubble crystal plane. Propagation by a magnetic pattern such as a 1-carp pattern maintains a configuration in which the 1 and 2 parts are extremely close to each other in the plane direction and the parts arranged in
I'm here. Then, C, the implant pattern is inside the crystal, and the permanent+:r-(pattern is inserted into another Ji() through the crystal and the smoother, so it is necessary to set up patterns independent of each other. This makes it possible to freely set the distance between each pattern, allowing for more flexible design than logic circuits created using only permanent coil patterns.Also, in general, compared to implant patterns, The driving force of the permanent pattern is stronger, and by actively utilizing it, it is possible to design a logic circuit that is different from conventional logic circuits.The combination of the permanent pattern and the implant layer By setting the gap between the patterns to O or by slightly modifying the pattern, it is possible to design freely as an I-design feed path.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing a conventional logic circuit, FIG. 2 is a diagram showing a conventional data 1 configuration, FIGS. 4 is a plan view showing the pattern configuration of the logic circuit, and FIG. 5 is a 111irI1 diagram showing the pattern configuration near the gate (=J). implantation layer; 11 is an insulating layer; 12 is a permalloy pattern; 13.
Reference numeral 15 indicates a propagation path, and reference numeral 14 indicates a boundary pattern of the ion implantation layer. Patent Applicant Fujitsu Limited Agent Minoru Aoyagi Figure 1 Figure 2 Figure 3 Figure 4 Figure 3 Figure 5

Claims (1)

[Claims] The propagation path created in the magnetic bubble crystal by ion implantation and the propagation path created by a magnetic pattern such as a permalloy pattern with a layer structure different from the magnetic bubble crystal plane are arranged extremely close to each other in the plane direction. A magnetic bubble element characterized in that desired characteristics are achieved by having a portion.