JPS5954228A - Anodic oxidation method for compound semiconductor - Google Patents
Anodic oxidation method for compound semiconductorInfo
- Publication number
- JPS5954228A JPS5954228A JP57164012A JP16401282A JPS5954228A JP S5954228 A JPS5954228 A JP S5954228A JP 57164012 A JP57164012 A JP 57164012A JP 16401282 A JP16401282 A JP 16401282A JP S5954228 A JPS5954228 A JP S5954228A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- anodized
- wafer
- compound semiconductor
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の属する技術分野〕 この発明は化合物半導体の陽極酸化方法に関する。[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to a method for anodizing compound semiconductors.
従来Ｉｎ８ｂ等の化合物半導体ウェハを陽極酸化する時
、陽極側の配線にＡｕ線等の良導体が、また陰極にＰｔ
板が用いられている。しかしながら、Ａｕ線を陽極酸化
溶液、例えば０．１Ｎ ＫＯＨに浸した状態で陽極酸化
を行うと、Ａｕ線とＰｔ板間に電流が流れ、Ｉｎ８ｂが
陽極酸化されないという欠点があった。その解決法とし
て第１図に示すような真空チャックを用いた陽極酸化装
置によって陽極酸化溶液に陽極金属を浸さない陽極酸化
法が考えられた。同本図において１は＠竹１．２は白金
板、３は金線、４はテフロン製ウェハチャック、５はＩ
ｎＳｂウェハ、６は０．１Ｎ ＫＯＨ水溶液、７はガラ
ス容器、８はＱ ＩＪングを各々示す。しかし、この
方法では真空チャックの大きさで陽極酸化されるＩｎＳ
ｂウェハの太き杯がｆｔ１ｌｌ限され、才だ真空チャッ
クの強さで薄いウェハが割れる等の欠点に加え、装置が
犬がかりになるという問題点があった。Conventionally, when anodizing a compound semiconductor wafer such as In8b, a good conductor such as Au wire is used for the wiring on the anode side, and a Pt wire is used for the cathode.
board is used. However, when anodic oxidation is performed while the Au wire is immersed in an anodizing solution, for example, 0.1N KOH, a current flows between the Au wire and the Pt plate, resulting in a drawback that the In8b is not anodized. As a solution to this problem, an anodic oxidation method using an anodic oxidation apparatus using a vacuum chuck as shown in FIG. 1 was considered, in which the anode metal is not immersed in an anodizing solution. In this figure, 1 is @ bamboo 1. 2 is a platinum plate, 3 is a gold wire, 4 is a Teflon wafer chuck, and 5 is an I
6 indicates a 0.1N KOH aqueous solution, 7 indicates a glass container, and 8 indicates a QIJ ring. However, in this method, InS is anodized in the size of the vacuum chuck.
In addition to drawbacks such as the thick cap of the B wafer being limited to 1 ft. ft. and the strength of the vacuum chuck causing thin wafers to break, there was also the problem that the device was dependent on the weight.
この発明は上述した従来の陽＠！、Ｉ′ｆｌ化法の欠点
を改良したもので容易に行うことのできる陽極酸化法を
提供することを目的とする。This invention is based on the conventional yang@! mentioned above! It is an object of the present invention to provide an anodic oxidation method which improves the drawbacks of the I'fl method and which can be easily carried out.
本発明によれば陽極の金属電極を陽極酸化する物質より
もさらに陽極酸化し易い物質にすることによって＋ｔ’
Ｇ成される。本発明における陽極酸化の初期状態では陽
極の金属電極の電流密度が高くなり、陽極金属゛電極は
陽（仇酸化される。陽極酸化されるにつれて陽極金属電
極は抵抗が尚くなり、陽極酸化する物質例えばＩｎＳｂ
ウェハの方が′電流密度が１ｈ５＜なり、工ｎＳｂウェ
ハは陽隠岐化されるようになる。According to the present invention, +t'
G is done. In the initial state of anodization in the present invention, the current density of the anode metal electrode is high, and the anode metal electrode is anodic (oxidized).As it is anodized, the resistance of the anode metal electrode becomes more Substances such as InSb
The current density of the wafer becomes 1h5<, and the nSb wafer becomes positive.
本発明による陽極酸化法で、陽極酸化を行えば従来不可
能であった陽極の金属電極を陽極酸化溶液に反すことが
６ｆ能となり、従来のように金属′電極をワックスまた
はワセリン等で覆う必要がない。With the anodizing method of the present invention, it is now possible to expose the metal electrode of the anode to the anodizing solution, which was previously impossible, by anodizing, and cover the metal electrode with wax or vaseline as in the past. There's no need.
また、Ａ空チャックを使用（７た陽極酸化法では、ウェ
ハの大きさに制限があるが本発明では、ウェハの大きさ
にハ１す限はなく、さらに同時に複数のウェハな陽極酸
化することが可能である。In addition, in the anodizing method using an empty chuck (7), there is a limit to the size of the wafer, but in the present invention, there is no limit to the size of the wafer, and furthermore, it is possible to anodize multiple wafers at the same time. is possible.
本発明における陽（ｆｆｉ Ｆ−７化の一実施例を第２
図を用いて説明する。テフロン製のウエノ・ホルグ−１
０に直径１００μｍＯＪ Ｔ ａ ４４．ｉＦ ９を図
示のように組み込み、ウエノ・５とＩ” ａ 紳９が接
触するようにする。An example of converting the positive (ffi F-7) in the present invention into a second
This will be explained using figures. Teflon Ueno Holgu-1
0 to 100 μm in diameter OJ Ta 44. Install iF 9 as shown, so that Ueno 5 and I''a Gen 9 are in contact.
０、Ｉ Ｎ ＫＯ）（水溶液６に一ヒ記テフロン製つエ
ノ・ホノトダ−１０を挿入しＩｎ８ｂウエノ・５を装着
する。Ｐｔ板２を陰極、Ｔａ線９を陽極と［〜て？ｄ流
ｆｌｉ１．ｌ限のある定電圧電６ｆＪｉに接続し、制限
゛電流を６・髪、定「Ｕ圧を２０Ｖに設定する。0, I N KO) (Insert the Teflon-made Eno-Honotoda-10 described above into the aqueous solution 6 and attach the In8b Ueno-5. Connect to the limited constant voltage power supply 6fJi, set the limited current to 6, and set the constant voltage to 20V.
このようにして陽極酸化を行うと、亥ず初期状態では陽
極のＴａ電極９の゛電流密度が高くなり、Ｔａ電極が陽
極酸化される。その結果Ｔａ’市極の抵抗は高くなり、
ＩｎＳｂウエノ・５の力が′電流密度が高くカリ、Ｉｎ
８ｂウエノ・５が陽極酸化される。When anodic oxidation is performed in this manner, the current density of the Ta electrode 9 serving as the anode becomes high in the initial state, and the Ta electrode is anodized. As a result, the resistance of Ta' city pole becomes high,
InSb Ueno・5 force is high current density, potash, InSb
8b Ueno-5 is anodized.
尚第２図に１・・いて１は１Ｊ１ｉｉａ＋ｊ、７はカラ
ス容器を示す。In Fig. 2, 1...1 indicates 1J1iia+j, and 7 indicates a crow container.
本実施例におりる衣面積１２ｃｎｌのＰ ｍＩｎ５ｌ）
を陽極酸化したところ、第３図のような電流密度の経時
変化が得られ、５分後の酸化膜は１２００Ａであった。P mIn5l with coating area of 12cnl in this example)
When this was anodized, the current density changed over time as shown in Figure 3, and the oxide film after 5 minutes was 1200A.
前述の説明では陽極金属電極と陽極酸化する物質を接触
させるとしたが、この接触をしつかりすれば両者の間に
絶縁層が形成されることはない。In the above description, the anode metal electrode and the substance to be anodized are brought into contact with each other, but if this contact is maintained, no insulating layer will be formed between the two.
第１図は従来の陽極酸化法を説明するだめの図、第２図
は本発明に係る陽極１試化法の一実施例を説明する／こ
めの図、第３図は本発明の方法で陽極酸化を行った時の
電流密度の経時変化を示す図である。
１ ・・・＠＋６＃泉、 ２ ・・
・白金イ反、３・・・金線、 ４・・・テフロ
ン製つエノ・チャ５・・・ＩｎＳｂウェハ、 ツク
、６・・・Ｏ，ｌＮ ＫＯ［（水浴液、
７・・・ガンスヒ゛−カー、
８・・・０−リング、 ９・・・タンタル線、１０・
・・テフロン蝕治具。
代理人 弁理士 則 近辺 佑 （ほか１名）第 １
図Figure 1 is a diagram for explaining the conventional anodic oxidation method, Figure 2 is a diagram for explaining an embodiment of the anode trial method according to the present invention, and Figure 3 is a diagram for explaining the method of the present invention. FIG. 3 is a diagram showing changes in current density over time during anodic oxidation. 1...@+6#Izumi, 2...
- Platinum wire, 3... Gold wire, 4... Teflon wire, 5... InSb wafer, Tsuk, 6... O, IN KO [(water bath liquid, 7... Gansuhi- Kerr, 8...0-ring, 9...Tantalum wire, 10.
...Teflon corrosion jig. Agent: Patent Attorney Noriyuki Chika (and 1 other person) No. 1
figure
Claims (2)
交し、該陽極リードに化合物半導体を接触させ、該陽１
−ｍ ’）−ドと陰極との間にバイアスを印加し該化合
物半導体を陽極酸化する方法において、該化合物半導体
に比較して酸化され易い材料を使用すると２を特徴とす
る化合物半導体の陽極酸化方法。(1) Place the anode lead and cathode in an alkaline solution (
a compound semiconductor in contact with the anode lead, and the anode 1
-m')- In the method of anodicizing the compound semiconductor by applying a bias between the electrode and the cathode, using a material that is more easily oxidized than the compound semiconductor, anodizing the compound semiconductor characterized by Method.
タル（’ｒａ）であることを特徴とする特許請求の範囲
第１項記載の化合物半導体の陽極酸化方法。(2) The method for anodizing a compound semiconductor according to claim 1, wherein the compound semiconductor is In8b and the lead wire is tantalum ('ra).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57164012A JPS5954228A (en) | 1982-09-22 | 1982-09-22 | Anodic oxidation method for compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57164012A JPS5954228A (en) | 1982-09-22 | 1982-09-22 | Anodic oxidation method for compound semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5954228A true JPS5954228A (en) | 1984-03-29 |
| JPH0478007B2 JPH0478007B2 (en) | 1992-12-10 |
Family
ID=15785092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57164012A Granted JPS5954228A (en) | 1982-09-22 | 1982-09-22 | Anodic oxidation method for compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5954228A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63244626A (en) * | 1987-03-30 | 1988-10-12 | Agency Of Ind Science & Technol | Manufacture of insb device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5753932A (en) * | 1980-08-04 | 1982-03-31 | Santa Barbara Res Center |
-
1982
- 1982-09-22 JP JP57164012A patent/JPS5954228A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5753932A (en) * | 1980-08-04 | 1982-03-31 | Santa Barbara Res Center |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63244626A (en) * | 1987-03-30 | 1988-10-12 | Agency Of Ind Science & Technol | Manufacture of insb device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0478007B2 (en) | 1992-12-10 |
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