JPS5952854B2 - transmitting device - Google Patents

transmitting device

Info

Publication number
JPS5952854B2
JPS5952854B2 JP52155836A JP15583677A JPS5952854B2 JP S5952854 B2 JPS5952854 B2 JP S5952854B2 JP 52155836 A JP52155836 A JP 52155836A JP 15583677 A JP15583677 A JP 15583677A JP S5952854 B2 JPS5952854 B2 JP S5952854B2
Authority
JP
Japan
Prior art keywords
temperature
attenuator
transmitting device
thermistor
output level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52155836A
Other languages
Japanese (ja)
Other versions
JPS5487413A (en
Inventor
光喜 照井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP52155836A priority Critical patent/JPS5952854B2/en
Publication of JPS5487413A publication Critical patent/JPS5487413A/en
Publication of JPS5952854B2 publication Critical patent/JPS5952854B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Cable Transmission Systems, Equalization Of Radio And Reduction Of Echo (AREA)
  • Transmitters (AREA)
  • Attenuators (AREA)

Description

【発明の詳細な説明】 本発明はヘテロダイン中継方式の中継器の送信装置に関
し、特にその送信出力レベルの温度による変化を補償す
る温度補償用の減衰器を含む送信装置に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a transmitter for a heterodyne relay type repeater, and more particularly to a transmitter including a temperature-compensating attenuator for compensating for changes in the transmitting output level due to temperature.

従来、この種の装置の送信出力レベルの温度変化の補償
は増幅器の内部に補償回路を設け、これによつて行なつ
ていた。
Conventionally, compensation for temperature changes in the transmission output level of this type of device has been achieved by providing a compensation circuit inside the amplifier.

このため技術的に調整が難しく、さらに各種送信装置総
合の異なつた温度変化特性を補償するには、あらかじめ
装置総合の温度特性を推定し、各各これに合つた温度補
償回路を取付けなければならないという欠点があつた。
本発明の目的はこのような欠点を解決するために温度補
償用の減衰器を設けた送信装置を提供することにある。
Therefore, it is technically difficult to make adjustments, and in order to compensate for the different temperature change characteristics of the various transmitter devices, it is necessary to estimate the overall temperature characteristics of the device in advance and install a temperature compensation circuit that is suitable for each device. There was a drawback.
SUMMARY OF THE INVENTION An object of the present invention is to provide a transmitting device provided with an attenuator for temperature compensation in order to solve such drawbacks.

本発明によれば、送信出力レベルが所定の温度特性を有
しかつ中間周波をマイクロ波に変換し増幅して送出する
送信装置において、送信装置の中間周波帯に非直線性素
子と、サーミスタを含むこの非直線性素子用バイアス回
路とを有する減衰器を設け、サーミスタで送信レベルの
温度特性と補償する送信装置が得られる。
According to the present invention, in a transmitting device whose transmission output level has a predetermined temperature characteristic and which converts an intermediate frequency into a microwave, amplifies it, and transmits it, a nonlinear element and a thermistor are provided in the intermediate frequency band of the transmitting device. By providing an attenuator having this nonlinear element bias circuit, a transmitting device can be obtained which compensates for the temperature characteristics of the transmission level using a thermistor.

以下図面について詳細に説明する。The drawings will be explained in detail below.

第1図は本発明のヘテロダイン中継方式の送信装置を簡
略化したブロック図であり、1は中間周波入力端子、2
は温度補償減衰器、3はミキサー、4はマイクロ波帯域
濾波器、5は増幅器、6はマイクロ波送信出力端子、7
は局部発振器である。
FIG. 1 is a simplified block diagram of a heterodyne relay type transmitter according to the present invention, in which 1 is an intermediate frequency input terminal, 2
is a temperature compensation attenuator, 3 is a mixer, 4 is a microwave bandpass filter, 5 is an amplifier, 6 is a microwave transmission output terminal, 7
is the local oscillator.

端子1から入力された中間周波信号は温度補償減衰器2
で温度変化に対応したレベルに設定され、ミキサー3に
よつてマイクロ波に変換される。さらに増幅器5で信号
は増幅され出力端子6より送信される。第2図は送信出
力レベルおよび温度補償減衰器の減衰量の対温度特性図
である。
The intermediate frequency signal input from terminal 1 is sent to temperature compensated attenuator 2.
is set to a level corresponding to temperature changes, and is converted into microwaves by mixer 3. The signal is further amplified by an amplifier 5 and transmitted from an output terminal 6. FIG. 2 is a diagram showing the transmission output level and the attenuation amount of the temperature compensation attenuator versus temperature.

第1図で温度補償減衰器2がない場合、送信電力は第2
図aのような送信出力レベル対温度変化特性がある。こ
こで第2図aの逆特性、即ち高温で減衰量が小さく、低
温で減衰量が大きくなる同図をのような特性を有した温
度補償減衰器2を第1図の位置に挿入すると、第2図c
のように送信出力レベルは温度変化に対し一定に保たれ
る。第3図は温度補償減衰器2の本発明の一実施例であ
つて、入力端子8、出力端子17、抵抗9〜’ 11お
よびピンダイオード(非直線性素子)12によつて構成
される減衰器と、サーミスタ13、抵抗14〜16およ
び電源端子18で構成されるバイアス回路と、コンデン
サ19、20と、チョークコイル21とから成る。
In Figure 1, if there is no temperature compensated attenuator 2, the transmission power is
There is a transmission output level versus temperature change characteristic as shown in Figure a. If we insert the temperature-compensated attenuator 2 in the position shown in FIG. 1, which has the opposite characteristics of FIG. 2a, that is, the attenuation is small at high temperatures and large at low temperatures, Figure 2c
The transmission output level is kept constant against temperature changes. FIG. 3 shows an embodiment of the temperature-compensated attenuator 2 according to the present invention, which includes an input terminal 8, an output terminal 17, resistors 9 to 11, and a pin diode (nonlinear element) 12. a bias circuit composed of a thermistor 13, resistors 14 to 16 and a power supply terminal 18, capacitors 19 and 20, and a choke coil 21.

Gはグランド端子である。サーミスタ13の抵抗値が温
度によつて変化することを利用し、ピンダイオード12
のバイアスを変え、抵抗9〜11及びピンダイオード1
2によつて構成される減衰器の減衰量を温度によつて変
化させることができる。温度が上昇するとサーミスタ1
3の抵抗値は下がる。これによりピンダイオード12の
両端へ印加される電圧が下がり、ピンダイオード12自
身の抵抗値は増加する。このよぬに温度が上がると減衰
器全体の減衰量は低下し、送信装置全体の送信出力レベ
ルの対温度特性と逆の特性となる。即ち、第2図bの特
性が得られる。ここで、ピンダイオード12のバイアス
を変えた時、減衰器を定抵抗回路にするため、抵抗9の
値も変えなければならないが、実験によれば入力端子8
及び出力端子17のりタンロスを20dBまで許容すれ
ば、抵抗9は固定であつてもさしつかえがない。また、
サーミスタ抵抗の温度変化ばかりでなく、抵抗14,1
5を調整することによつても、温度変化による減衰量の
値を変えることができる。以上により第1図の入力端子
1に入力された信号は、温度によつて変化するレベル分
だけ温度補償減衰器2で補償され、送信装置の送信出力
レベルは温度変化に対し一定のレベルで゛出力端子6よ
り送信される。なお、第3図の温度補償減衰器を用いた
実験データとして、第4図に温度による減衰器の減衰量
の変化、第5図に温度による減衰器のリターンロス変化
を示す。以上説明したように本発明によれば、非直線性
素子を有する温度補償減衰器にサーミスタを含むバイア
ス回路を設け、ヘテロダイン中継機の送信装置の中間周
波帯に設けてあるため、送信装置の送信出力レベルの対
温度特性を容易にかつ確実に補償することができる。
G is a ground terminal. By utilizing the fact that the resistance value of the thermistor 13 changes depending on the temperature, the pin diode 12
By changing the bias of resistors 9 to 11 and pin diode 1
The amount of attenuation of the attenuator configured by 2 can be changed depending on the temperature. When the temperature rises, thermistor 1
The resistance value of 3 will decrease. As a result, the voltage applied to both ends of the pin diode 12 decreases, and the resistance value of the pin diode 12 itself increases. If the temperature rises beyond this point, the attenuation amount of the entire attenuator decreases, resulting in a characteristic that is opposite to the temperature characteristic of the transmission output level of the entire transmitter. That is, the characteristics shown in FIG. 2b are obtained. Here, when the bias of the pin diode 12 is changed, the value of the resistor 9 must also be changed in order to make the attenuator a constant resistance circuit, but according to experiments, the value of the resistor 9 must also be changed.
The resistor 9 may be fixed as long as the tann loss of the output terminal 17 is allowed to be up to 20 dB. Also,
Not only the temperature change of the thermistor resistance, but also the resistance 14,1
5 can also change the value of the amount of attenuation due to temperature change. As described above, the signal input to the input terminal 1 in Fig. 1 is compensated by the temperature compensation attenuator 2 by the level that changes depending on the temperature, and the transmission output level of the transmitter remains at a constant level with respect to temperature changes. It is transmitted from output terminal 6. As experimental data using the temperature-compensated attenuator shown in FIG. 3, FIG. 4 shows changes in the attenuation amount of the attenuator due to temperature, and FIG. 5 shows changes in return loss of the attenuator due to temperature. As explained above, according to the present invention, a bias circuit including a thermistor is provided in the temperature compensation attenuator having a nonlinear element, and is provided in the intermediate frequency band of the transmitting device of the heterodyne repeater, so that the transmitting device can transmit The temperature characteristics of the output level can be easily and reliably compensated for.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は中間周波をマイクロ波に変換する本発明の送信
装置の簡略プロツク図、第2図は送信出力レベルおよび
温度補償減衰器の減衰量の対温度特性図、第3図は本発
明の温度補償減衰器の実施回路図、第4図は第3図の温
度補償減衰器の減衰量対温度特性実験データ、第5図は
同減衰器のりタンロス対温度特性実験データである。 なお図中において、1・・・・・・中間周波入力端子、
2・・・・・・温度補償減衰器、3・・・・・・ミキサ
、4・・・・・・マイクロ波帯域濾波器、5・・・・・
・増幅器、6・・・・・・マイクロ波送信出力端子、7
・・・・・・局部発振器、8・・・・・・信号入力端子
、9,10,11・・・・・・抵抗、12・・・・・・
ピンダイオード、13・・・・・・サーミスタ、14,
15,16・・・・・・抵抗、17・・・・・・信号入
力端子、18・・・・・・負電源入力端子、19,20
・・・・・・コンデンサ、21・・・・・・チヨークコ
イルである。
Fig. 1 is a simplified block diagram of the transmitter of the present invention that converts intermediate frequency into microwaves, Fig. 2 is a diagram of the transmission output level and the attenuation amount of the temperature compensation attenuator versus temperature, and Fig. 3 is the diagram of the transmitter of the present invention. An implementation circuit diagram of the temperature-compensated attenuator, FIG. 4 shows experimental data on the attenuation vs. temperature characteristic of the temperature-compensated attenuator shown in FIG. 3, and FIG. 5 shows experimental data on the tangent loss vs. temperature characteristic of the same attenuator. In the figure, 1... intermediate frequency input terminal,
2... Temperature compensation attenuator, 3... Mixer, 4... Microwave bandpass filter, 5...
・Amplifier, 6...Microwave transmission output terminal, 7
...Local oscillator, 8...Signal input terminal, 9, 10, 11...Resistor, 12...
Pin diode, 13...Thermistor, 14,
15, 16... Resistor, 17... Signal input terminal, 18... Negative power input terminal, 19, 20
. . . Capacitor, 21 . . . Chiyoke coil.

Claims (1)

【特許請求の範囲】[Claims] 1 送信出力レベルが所定の温度特性を有しかつ中間周
波をマイクロ波に変換し増幅して送出する送信装置にお
いて、前記送信装置の前記中間周波帯に非直線性素子と
、サーミスタを含む前記非直線性素子用バイアス回路と
を有する減衰器を設け、前記サーミスタで前記送信出力
レベルの温度特性を補償することを特徴とする送信装置
1. In a transmitting device whose transmission output level has a predetermined temperature characteristic and which converts an intermediate frequency into a microwave, amplifies it, and transmits it, the transmitting device includes a non-linear element in the intermediate frequency band and the non-linear element including a thermistor. 1. A transmitting device comprising: an attenuator having a linear element bias circuit; the thermistor compensating for temperature characteristics of the transmitting output level.
JP52155836A 1977-12-23 1977-12-23 transmitting device Expired JPS5952854B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52155836A JPS5952854B2 (en) 1977-12-23 1977-12-23 transmitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52155836A JPS5952854B2 (en) 1977-12-23 1977-12-23 transmitting device

Publications (2)

Publication Number Publication Date
JPS5487413A JPS5487413A (en) 1979-07-11
JPS5952854B2 true JPS5952854B2 (en) 1984-12-21

Family

ID=15614552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52155836A Expired JPS5952854B2 (en) 1977-12-23 1977-12-23 transmitting device

Country Status (1)

Country Link
JP (1) JPS5952854B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5959745U (en) * 1982-10-11 1984-04-19 セイレイ工業株式会社 Rotating structure of chain saw in pruning machine

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0390120U (en) * 1989-12-27 1991-09-13
JP5206828B2 (en) * 2011-03-14 2013-06-12 日本電気株式会社 Signal processing circuit and signal processing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5959745U (en) * 1982-10-11 1984-04-19 セイレイ工業株式会社 Rotating structure of chain saw in pruning machine

Also Published As

Publication number Publication date
JPS5487413A (en) 1979-07-11

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