JPS5951583A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS5951583A JPS5951583A JP10578583A JP10578583A JPS5951583A JP S5951583 A JPS5951583 A JP S5951583A JP 10578583 A JP10578583 A JP 10578583A JP 10578583 A JP10578583 A JP 10578583A JP S5951583 A JPS5951583 A JP S5951583A
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- semiconductor laser
- signal
- difference
- fluctuation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明装置、は一台の半導体レーザの発振周波数の差周
波数が高度に安定な半導体レーザ装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor laser device in which the difference frequency between the oscillation frequencies of one semiconductor laser is highly stable.
従来のこの神の装置としでは、二台のレーザ発振装（〆
−から成り、その両方もしくしま一方のレーザの共振器
長がｔ’ｚ’ｉ”により制御され、該二台のレージ“の
発振周波θの差周波θが基準の値力・ら変動した場合、
その変動に応じて、Ｌ）Ｚ”ｒの印加電圧を変化さ〜ぜ
、−力もしくは両方のレーザの発振周波数を変化させ、
これにより差周波数を再び基準周波数に近い値に保持す
るものがあったか、このｊ？３合共振器長を機械的に変
動させるものであるため、機械的振動の影響を受はヤす
く、又制御ヴ〕応召が遅いという欠点力ｔあった。The conventional device of this kind consists of two laser oscillators (〆-), the resonator length of one or both of the lasers is controlled by ``t'z'i'', When the difference frequency θ of the oscillation frequency θ changes from the reference value force,
According to the fluctuation, change the applied voltage of L) Z"r, -power or the oscillation frequency of both lasers,
Was there something that would keep the difference frequency close to the reference frequency again? Since the three-coupled resonator length is mechanically varied, it is not easily affected by mechanical vibrations, and has the disadvantage that control response is slow.
本発明はこれらの欠点を除去するために各々の半導体レ
ーザ装置を安定に保持し、力）つその差周波数を安定に
するために一方のレーザの出力光を周波数変換器により
変換させるようにし、ｈ）つ差周波数に変動が生じた場
合、周波数変換器の変換周波数を変化させるようにした
ものであるが、この場合、１１４波数変換器の特長を反
映して、機械的振動の影響を受けに（く、また、制御の
応答が早り２．又熱的変−）の影響も受けにく（・と（
・う特徴がある。In order to eliminate these drawbacks, the present invention maintains each semiconductor laser device stably, converts the output light of one laser by a frequency converter in order to stabilize the difference frequency between the two, and h) The conversion frequency of the frequency converter is changed when there is a change in the frequency difference. In addition, the control response is fast and it is less susceptible to thermal changes.
・It has unique characteristics.
第１図は本発明の一実施例を示したものである。FIG. 1 shows an embodiment of the present invention.
ｌは半導体レーザ、〕は温度制御装置、３は温度制御回
路、ゲは周波数弁別器としての干渉フィルタ、ｊは光検
出素子、乙は制御信号発生回路、７は可変光周波数変換
器、ｇはその駆動回路、りはハーフミラ−１ｉｏは差周
波数を発生する 光検出素子、／ｌは制御信号発生回路
である。半導体レーザの出力光ＬＩＬ２はそれ自体ｌ〜
乙の装［坑構成によりその周波数が安定に保持される。l is a semiconductor laser, ] is a temperature control device, 3 is a temperature control circuit, ge is an interference filter as a frequency discriminator, j is a photodetection element, ot is a control signal generation circuit, 7 is a variable optical frequency converter, g is a The drive circuit, 1io, is a photodetection element that generates a difference frequency, and /1 is a control signal generation circuit. The output light LIL2 of the semiconductor laser is itself l~
The frequency is maintained stably due to the well configuration.
即ち、その周波数に変動が生じた場合は、干渉フィルタ
の出力強度が変化しそれに伴い制御１６号が発生し温度
制御回路鉦の温度が、半導体レーザの発振周波数の変動
を抑制する方向に変更される。本発明装置の特徴はこの
ように安定化されたλつの光の差周波数をさらに高度に
安定に保つことにある。That is, when a fluctuation occurs in the frequency, the output intensity of the interference filter changes, control No. 16 is generated accordingly, and the temperature of the temperature control circuit is changed in a direction to suppress the fluctuation in the oscillation frequency of the semiconductor laser. Ru. The feature of the device of the present invention is that the difference frequency of the thus stabilized λ lights can be kept more highly stable.
即ら、半導体レーザの出力光Ｌ１と光用°変周波数変換
器の出力光Ｉｉ５と火ハーフミラ−で合成し、光検出素
子ｌＯで受光すると、その出力信号には差周波数のビー
ト信号が含まれる。そこでそのビート信号周波数ハωと
基準信号周波数ハω。That is, when the output light L1 of the semiconductor laser and the output light Ii5 of the optical degree variable frequency converter are combined by the optical half mirror and received by the photodetector element 1O, the output signal includes a beat signal of the difference frequency. . Therefore, the beat signal frequency Hω and the reference signal frequency Hω.
とを比軟し、それに差が生じた場合それを抑制すべく可
変周波数変換器の駆動回路に制御信号Ｓ′を供給する。and a control signal S' is supplied to the drive circuit of the variable frequency converter in order to suppress the difference if it occurs.
ずなわち出力光り、とＬｌとの間の差周波数が所定の値
かり変動すると、制御信号Ｓによって０１変周波数変換
器が動作して出力光り、の周波数が変化して、出力光Ｌ
１とＬ３の差周波数はいつも一定の１１１ｔに保持され
る。従って本実施例によればその差周波数が高度に安定
な二つの光ビームを発生させることができる。That is, when the difference frequency between the output light and Ll changes by a predetermined value, the control signal S operates the 01 variable frequency converter to change the frequency of the output light, causing the output light L to change.
The difference frequency between 1 and L3 is always kept constant at 111t. Therefore, according to this embodiment, two light beams whose difference frequencies are highly stable can be generated.
本発明装置の応Ｉｌ１例としては、惰力光と参照光の両
方を送信側から送る形式の光ヘテロダイン通４ａ方式に
おける送信側の光源として用いると有利である。As an example of the device of the present invention, it is advantageous to use it as a light source on the transmitting side in an optical heterodyne communication system 4a in which both the inertia light and the reference light are transmitted from the transmitting side.
以上説明したように、本発明によれば半導体レーザな用
いた差周波数の安定な光源としての半導体レーザ装置を
実現でき、しかもその装置は小形かつ周囲の温度変動お
よび機械的振動の影響を受はイ、ことの少い装置？セ、
であるという利点を有する。As explained above, according to the present invention, it is possible to realize a semiconductor laser device using a semiconductor laser as a stable light source with a difference frequency, and the device is small and is not affected by ambient temperature fluctuations and mechanical vibrations. I, a device that doesn't have much to do with it? Se,
It has the advantage of being
第１図は本発明装置Ｉｉの一実施例、ｔは半導体レーザ
、２は温度制御装置、３は温度制御ｌ１Ｍ１回路、弘は
干渉フィルタ、ｊは光検出素子、乙は制御１ｇ号発生回
路、７は光可変周波数変換器、ｇは駆動回路、りはハー
フミラ、１０は）℃検出素子、／／は制御信号発生回路
である。
指定代理人FIG. 1 shows an embodiment of the device Ii of the present invention, t is a semiconductor laser, 2 is a temperature control device, 3 is a temperature control l1M1 circuit, Hiroshi is an interference filter, j is a photodetection element, O is a control No. 1g generation circuit, 7 is an optical variable frequency converter, g is a drive circuit, 1 is a half mirror, 10 is a ℃ detection element, and // is a control signal generation circuit. designated agent
Claims (1)
くは、注入電流を制御１−ることにより、その発振周波
数をｔｌｊｌ）御する制御装置ど、前記中２、・□体し
−ザの出力光の一部を受光する吸収もしく ＋：ｒ ｙ
ｉ過形の周波数ヅ［別器と、該周波数弁波数に変動が生
じたときに、それに伴って前記周波蚊弁別器の特性曲線
の微分係数の値に応じて発生する当該周波数弁別器の出
力光の強度変動を検出し、該強度変動に対応して、当該
周波数変動を抑制するようなフィードバック１百号を発
生する制＠ｊ倍号発生回路とを具備し、前記フィードバ
ック信号を前記Ｙ＾Ｗ度もしくけ注入゛１（Ｌ流の制御
装置ｋに供帽するように１＃り成した２つの半導体レー
ザ装置と、そのうちの一方の半導体レーザ装置トイの出
力光を受；光喜Ｖ と、前記元ビート信号および所定の一定周温。 数の参照信号とを供給され、前記光ビート信−号の周波
数が前記参照信号の周波数から変動したとぎに当該ｆ
ｙＨＢに応じで、前記可変光周波数変換器にｆｕｌｌ
＋’＋ｌｌ信号ケフ信号ケバイードバックにより当該変
動を抑制すべく前記可変光周波数変換器を動作させろ制
式回路とを具備したことを特徴とする半導体レーザ装置
。(1) A semiconductor laser and a control device that controls its oscillation frequency by controlling the temperature or injection current of the semiconductor laser, etc., and Absorption that receives part of the light or +:r y
The frequency of the i-overform [separate device] and the output of the frequency discriminator that is generated in accordance with the value of the differential coefficient of the characteristic curve of the frequency mosquito discriminator when a fluctuation occurs in the frequency valve wave number. and a control@j multiplier generation circuit that detects intensity fluctuations of light and generates feedback 100 to suppress the frequency fluctuation in response to the intensity fluctuation, and converts the feedback signal into the Y^ W degree system injection 1 (two semiconductor laser devices 1# made to be attached to the L flow control device k, and receiving the output light of one of the semiconductor laser device toys; Koki V and, The original beat signal and a predetermined constant frequency reference signal are supplied, and when the frequency of the optical beat signal changes from the frequency of the reference signal, the f
According to yHB, the variable optical frequency converter is full
A semiconductor laser device comprising: a control circuit for operating the variable optical frequency converter in order to suppress the fluctuation by the +'+ll signal KEF signal Kebaid back.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10578583A JPS5951583A (en) | 1983-06-15 | 1983-06-15 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10578583A JPS5951583A (en) | 1983-06-15 | 1983-06-15 | Semiconductor laser device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54001776A Division JPS59140B2 (en) | 1979-01-13 | 1979-01-13 | semiconductor laser equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5951583A true JPS5951583A (en) | 1984-03-26 |
| JPS6343905B2 JPS6343905B2 (en) | 1988-09-01 |
Family
ID=14416791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10578583A Granted JPS5951583A (en) | 1983-06-15 | 1983-06-15 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5951583A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU700451B2 (en) * | 1993-10-07 | 1999-01-07 | Glycomed Incorporated | Highly sulfated maltooligosaccharides with heparin-like properties |
-
1983
- 1983-06-15 JP JP10578583A patent/JPS5951583A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6343905B2 (en) | 1988-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3243722A (en) | Maser frequency control systems using refractive index change | |
| JP2942619B2 (en) | Harmonic generator | |
| JPH0766482A (en) | Variable wavelength light source | |
| JPH04157780A (en) | Frequency stabilizer for semiconductor laser | |
| US5383209A (en) | Second harmonic generator | |
| US4745606A (en) | Dual-wavelength laser apparatus | |
| US4249140A (en) | Closed loop resonator feedback system | |
| JPS5951583A (en) | Semiconductor laser device | |
| JPS59140B2 (en) | semiconductor laser equipment | |
| JPS5821832B2 (en) | Hand tie laser touch | |
| US4965805A (en) | Dither-free actively stabilized laser | |
| JPH02244782A (en) | Frequency stabilized semiconductor laser driver | |
| JP2566331B2 (en) | Variable wavelength light source device | |
| JPS58171880A (en) | Wavelength control device for semiconductor laser | |
| JPS6014330B2 (en) | Optical frequency stabilizer | |
| JPH0482071B2 (en) | ||
| JPH06338652A (en) | Stabilization of wavelength of laser and semiconductor laser module for wavelength stabilization | |
| JPS63137494A (en) | Frequency stabilizer for semiconductor laser | |
| JP2715484B2 (en) | Semiconductor laser device | |
| JPS6410425A (en) | Optical information recording and reproducing device | |
| RU2210847C1 (en) | Radiation frequency stabilized laser | |
| JPS63233585A (en) | Laser light source | |
| JPS62162382A (en) | Highly-stabilized semiconductor laser light source | |
| SU1517087A2 (en) | Laser with retunable generation spectrum | |
| JPH06275900A (en) | Frequency-stabilized light source |