JPS5946846A - Semiconductor sensor - Google Patents

Semiconductor sensor

Info

Publication number
JPS5946846A
JPS5946846A JP57158640A JP15864082A JPS5946846A JP S5946846 A JPS5946846 A JP S5946846A JP 57158640 A JP57158640 A JP 57158640A JP 15864082 A JP15864082 A JP 15864082A JP S5946846 A JPS5946846 A JP S5946846A
Authority
JP
Japan
Prior art keywords
sensor
sensor chip
notch
chip
pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57158640A
Other languages
Japanese (ja)
Inventor
Yoshiaki Yoshida
吉明 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Original Assignee
Daikin Industries Ltd
Daikin Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd, Daikin Kogyo Co Ltd filed Critical Daikin Industries Ltd
Priority to JP57158640A priority Critical patent/JPS5946846A/en
Publication of JPS5946846A publication Critical patent/JPS5946846A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain an inexpensive semiconductor sensor of a throw-away type, by sealing tightly a sensor chip in a sensor prior to use to provide a thorough protection against contamination to the sensor chip and exposing the sensor chip to the outside only while the sensor is in use. CONSTITUTION:A sensor chip 10 is disposed in a molding die which has a notch 17 on the circumference of the part corresponding to a cavity 15 by reserving a slight width therein, and wherein a seating pin 11 and electrodes 14, 14 are projected to the outside from a mold body 16. A molten plastic is injected into the die to form a molding. When the upper part 16A of the body 16 is pushed laterally, the upper part 16A thereof is easily broken off from the lower part 16B thereof along the notch 17. The semiconductor sensor broken out of the upper part 16A of the body 16 is set in a detector by inserting both pins 11, 14 into insertion holes for the pin 11 and pins 14 of the detector. The semiconductor sensor set in such a way performs prescribed detection by the sensor part 12, and feeds the signal relating to said detection through the pin 14 to the detector.

Description

【発明の詳細な説明】 本発明は、外部環境からの汚染を防止するように酸化膜
や窒化膜等の保護膜が設けられている半導体センサに係
り、詳しくは使い捨てタイプの半導体センサに関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor sensor provided with a protective film such as an oxide film or a nitride film to prevent contamination from the external environment, and more particularly to a disposable type semiconductor sensor.

このような半導体センサに使用されるセンサチップには
通常、外部からの汚染を防止するためにその表面に例え
ば酸化膜を形成する必要がある。
For example, an oxide film must be formed on the surface of a sensor chip used in such a semiconductor sensor to prevent contamination from the outside.

特に、セッサチップが外部に露出している構造の半導体
センサではセッサチップの全面に〜り化1俟を形成しな
ければならない3.このため、fif来(雑誌r4ON
IcsJ 1978年2月号)では、第1図に示すよう
にシリコンウェハー(1)に短舟状に複数個所に切れ口
(2)・・・を設け、センサチップを構成する部分(3
1・・・の表面、裏面のみならず、両側面にも酸化+1
1Aを形成し、セッサチップの支持部(4)・・を4a
411iモール1へして後切れ目2+)・・・から切断
し、第2図の拡大図に示すごときセンサチップを?Uj
−Cいる3、第2図において、(5)は樹脂モールドで
ある。1ところが、このようなセンサチップは非1翳に
市価であり、したがってこのようなセンサチップを便用
したゝ1こ導体セッサは使い捨てタイプとしてはJ1常
に高価なものとなり、簡単に使い捨ててきjcい。
In particular, in a semiconductor sensor with a structure in which the sensor chip is exposed to the outside, it is necessary to form a dot on the entire surface of the sensor chip. For this reason, fif (magazine r4ON)
IcsJ (February 1978 issue), as shown in Figure 1, a silicon wafer (1) is provided with multiple short boat-shaped cuts (2)...
Oxidation +1 not only on the front and back sides of 1... but also on both sides
1A, and the support part (4) of the processor chip is formed as 4a.
411iMall 1 and then cut from the cut 2+)... to form a sensor chip as shown in the enlarged view of Figure 2. Uj
-C 3. In Figure 2, (5) is a resin mold. However, such a sensor chip is extremely expensive on the market, and therefore, a single-use conductor sensor using such a sensor chip is always expensive as a disposable type, and cannot be easily disposed of. .

本発明は、上述に鑑み、便JiJ−4−る前はセッサチ
ップを密封して、汚染に対1−る保護を完全に行い部用
時にのみこのセンサチップを外部に落出させるようにし
て、安価なセッサチップでも使い捨てタイプの半導体セ
ンサに使用できるようにして安価な便い捨てタイプの半
導体センサが得られるようにするとともに使い捨てを簡
単に行えるようにすることを目的とする。
In view of the above, the present invention is designed to completely protect the sensor chip from contamination by sealing the sensor chip before use, and allowing the sensor chip to fall outside only when it is used for personal use. To obtain an inexpensive disposable type semiconductor sensor by enabling even an inexpensive processor chip to be used in a disposable type semiconductor sensor, and to easily dispose of the sensor chip.

本発明は、上記目的を達成するため、センサチップ」二
の少な(ともセンサ部分には空隙が残り、かつその周囲
には僅かな幅をもって折り取り用のり欠きが形成される
ようにセン→)°チップを電極ピンの一部等と共に樹脂
で密にモールトシ、前記切欠きのところでモールI・の
一部が折り取られtコときの折り取り面には前記空隙を
介してセッサ部分が露出するように構成されている。
In order to achieve the above-mentioned object, the present invention is designed to reduce the size of the sensor chip. °The chip is tightly molded with resin together with a part of the electrode pin, and a part of the molding I is broken off at the notch, and the cutoff surface is exposed through the gap. It is configured as follows.

以下、本発明を図面に示す一実施例に傘ついて詳細に説
明する。
Hereinafter, the present invention will be described in detail with reference to an embodiment shown in the drawings.

第3図は本発明の実施例に係る半導体上ノ→ノーの外観
図であり、第4図は第3図の縦断面図である。
FIG. 3 is an external view of a semiconductor according to an embodiment of the present invention from top to bottom, and FIG. 4 is a longitudinal sectional view of FIG. 3.

シリコン等の半導体ウェハーからなるセンサチップθQ
は、着座ピン0υの着座面に固定される。セシサチツブ
叫の一方の面側のセッサ部分0力の両端近くにワイヤボ
ッティック(13Q:1を介して電極ビン(+4)0ψ
に接続され、前記両ピン0I)0→から検出信号が外部
へ導出される。センサチップ(10は、その七/→を部
分O匂の上部に空隙θ均が残るようにl)!J iid
 1llllビ/(II)04)の一部と共にプラスチ
ック等の樹脂てモール1−し、該両ピノ(II) (+
41はモールI・体(IQから外力に突出させる。
Sensor chip θQ made of semiconductor wafer such as silicon
is fixed to the seating surface of the seating pin 0υ. Connect the electrode bin (+4) 0ψ via the wirebottom (13Q:1) near both ends of the sensor part 0 force on one side of the sensor part 0ψ.
The detection signal is led out from both pins 0I)0→. Sensor chip (10 is 7/→ so that a gap θ is left at the top of the part O)! J iid
1llll Bi/(II) 04) and a resin mold 1- of plastic etc., and both the Pino(II) (+
41 is Mohr I/body (protrudes from IQ to external force).

以上のように構成しtこセンサチップ(1(今を樹脂で
モールドするに当って、L記空隙(1■には充填材を挿
入するかあるいは不活性ツf 7.を封IJ: lyて
、センサ部分αつの汚染防止を史に′完全にしてもよい
。、そして、上記センサチップ(1[相]を空隙(冑に
対応−七る部分の周囲にわずかの幅を残す、1:うjL
−切欠き(+71を有し、着座ピン(11)および電極
(+4) (+4)をモールド体0句から外方に突出す
る如きモールド金型内に配置し、溶融プラスチックを金
型内に射出してモールドを成形するものであるが、この
IR5空隙空隙を確実に残してモールドするためには、
センサチップ’ (It目−。
When molding the sensor chip (1) configured as described above with resin, insert a filler into the gap (1) or seal it with an inert tube (IJ: ly). , it is possible to completely prevent contamination of the sensor part α.Then, the sensor chip (1 [phase]) is covered with a gap (corresponding to the helmet), leaving a slight width around the part of the sensor chip (1: phase). jL
- Place the seating pin (11) and the electrode (+4) in a mold such that it has a notch (+71) and protrudes outward from the mold body, and inject molten plastic into the mold. However, in order to ensure that the IR5 voids are left in the mold,
Sensor chip' (Itth -.

に充填材を前もって載せておくことはj+fjj +’
hて好;Lしいものである。
It is j+fjj +' to place filler material in advance on
It's nice; it's nice.

次に、このような槙造をイ]’−4’る゛11.導体4
!ノ→t O’)使用について説明する。
Next, make this kind of Makizo 11. conductor 4
!ノ→t O') Use will be explained.

先す、モール1一体θQの上部(16A)を横方向へ押
す。そうすると、モールド体O0は樹脂でjL4成され
ておす、シかもその周囲には切欠き(Iηが形成され中
央部の空隙0均との間はわずかの幅しかないので、その
」一部(]、6A)が、切欠き07)に沿ってその下部
(16B)からlff1i)単に祈り取られる。この折
り取り面は、空隙θ0か位置しているので、折り取り血
にはこの空隙θのを介してセンサ部分Oノか露出する。
First, push the upper part (16A) of molding 1 integral θQ in the horizontal direction. Then, the mold body O0 is made of resin, and a notch (Iη) is formed around it, and there is only a small width between it and the gap in the center, so a part of it (Iη) is formed. , 6A) is simply removed from its lower part (16B) along the notch 07). Since this break-off surface is located at the gap θ0, the sensor portion O is exposed to the broken blood through the gap θ.

第3図には、モールド体00の上部(16A)を切り取
ったときの半導体セッサの外観が示されている。ここで
、空隙0句に充填材が挿入されていればこれを取り除く
とよい。このようにして、モールI・体00の上部(1
6A、)を折り取った半導体センサを、図示しない検出
装置の着座ピンOυや電極ビン(14)用挿入穴に該両
ビン0υ04)を挿入することにより、検出装置gにセ
ン1−する。このセットにより、半導体センサは所定の
検出をセンサ部分a4により行うとともにその検出に係
る信号を電極ピン0荀を介して検出装置に送る。
FIG. 3 shows the appearance of the semiconductor processor when the upper part (16A) of the mold body 00 is cut away. Here, if a filler has been inserted into the void, it is recommended to remove it. In this way, the upper part (1
The semiconductor sensor 6A,) is inserted into the detection device g by inserting the two bottles 0υ04) into the seating pin Oυ and the insertion hole for the electrode bottle (14) of the detection device (not shown). With this set, the semiconductor sensor performs a predetermined detection using the sensor portion a4 and sends a signal related to the detection to the detection device via the electrode pin 0.

なお、上述の実施例の半導体セッサは圧力センサ、カス
センサ、pHセノ→J、イオノセノ→ノ等に適用でき、
また、血液中の浴存成分の分析、尿検査等の分野で医用
セッサとしても便用J−(I”きる。
In addition, the semiconductor sensor of the above-mentioned embodiment can be applied to a pressure sensor, a gas sensor, a pH sensor → J, an ion sensor → NO, etc.
It can also be used as a medical processor in the fields of analysis of bath components in blood, urine tests, etc.

以上説明しtこように、本発明によれは、七)→l゛デ
ツプ上の少なくともセン→ノ〜部分には?;Ullj;
jか残り、かつその周囲には僅かな幅をもってイJiり
取り用の切欠きか形カ児されるようにセノーIγチツノ
を電極ビンの一部等と共に樹脂で密にモールドし、前記
切欠きのところでモールドの一部か4110取られたと
きの折り取り而には前記空隙を介してセッサ部分か露出
するようにしたので、便用才る+:+ilの状11.=
ではセンサチップが外部から汚染さオしなくて済み、こ
のためセンサチップとしては半導体ウェハーの表裏面に
酸化膜等の保護膜を111に形ノ戎し、これをスクライ
ビングするのみで作ることができる非常に安価なセンサ
チップを便用才ることかi+J能となり、したかつて、
安価な便い捨てタイーノの半導体セッサが得られる。ま
た、本発明によ旧ば、便用にあたっては、モールドの−
・部を折り取るのみ−Cよく、簡単に使用できる半導体
セン→ノ“か得られる。
As explained above, according to the present invention, at least the part on the 7)→L depth is covered? ;Ullj;
The Seno Iγ Chitsuno is densely molded with resin together with a part of the electrode bottle, etc., so that a notch for removing the Iji is formed with a small width around it, and the notch is shaped like a notch. By the way, when a part of the mold is removed, the sessor part is exposed through the gap, so that it is convenient to break it off. =
In this case, the sensor chip does not need to be contaminated from the outside, and for this reason, the sensor chip can be made by simply cutting out a protective film such as an oxide film on the front and back surfaces of the semiconductor wafer and scribing this. Once upon a time, it became possible to use a very cheap sensor chip.
A cheap and convenient disposable Taino semiconductor processor can be obtained. In addition, according to the present invention, for convenience, the -
・You can obtain a semiconductor sensor that is easy to use by simply breaking off the part.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図は従来例に係り、第1図は従来例に便用
されるセッサチップの製造方法を説明するためのンリコ
ノウエハーの斜視図、第2図は第1図の製造により作ら
れたセッサチップのhvi成を示す図、第3図〜第5図
は本発明の実施例に係り。 第3図は本発明の実施例の使用afJの外観斜睨図。 第4図は第3図の縦断181図、第5図はこの実施例の
使用時の外観斜視図である。 θ燵・・・セッサチップ、θυ・・着座ビン、02・・
・セッサ部分、θカ・・・電極ビ゛ン、θG・・・空隙
、Oe・・・モールド体。 (Iη・・・切欠き 出 −人  タイキノ工業株式会社 代理人 弁理士岡田和秀 第1図 第2図 第4図 第3図
1 and 2 relate to a conventional example, FIG. 1 is a perspective view of a non-contact wafer for explaining the manufacturing method of a processor chip conveniently used in the conventional example, and FIG. 2 is a wafer manufactured by the manufacturing method shown in FIG. The diagrams showing the hvi configuration of the processor chip shown in FIGS. 3 to 5 relate to embodiments of the present invention. FIG. 3 is an external perspective view of an afJ used in an embodiment of the present invention. FIG. 4 is a vertical cross-sectional view of FIG. 3, and FIG. 5 is a perspective view of the appearance of this embodiment in use. θ燵・・・Sessa tip, θυ・Seating bin, 02...
-Sessor part, θF...electrode via, θG...gap, Oe...mold body. (Iη...notch protrusion - person Taikino Kogyo Co., Ltd. agent Patent attorney Kazuhide Okada Figure 1 Figure 2 Figure 4 Figure 3

Claims (1)

【特許請求の範囲】[Claims] 1、セッサチップoQ上の少なくともセッサ部分0邊に
は空隙OQが残り、かつその周囲には僅かな幅をもって
折り取り用の切欠きQ71が形成されるようにセッサチ
ップθ0を電極ピンθ荀の一部等と共に樹脂で密にモー
ルドし、前記切欠きQ7)のところでモールドの一部が
折り取られたときの析り11Vり而には前記空隙aυを
介してセッサ部分aりが14出することを特徴とする半
導体センサ。
1. The cesser chip θ0 is attached to a part of the electrode pin θ so that a gap OQ remains at least near the cesser part 0 on the cesser chip oQ, and a notch Q71 for breaking off with a slight width is formed around the gap OQ. etc., and when a part of the mold is broken off at the notch Q7), there is a breakage of 11V, and a cessation part a comes out through the gap aυ. Characteristic semiconductor sensor.
JP57158640A 1982-09-11 1982-09-11 Semiconductor sensor Pending JPS5946846A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57158640A JPS5946846A (en) 1982-09-11 1982-09-11 Semiconductor sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57158640A JPS5946846A (en) 1982-09-11 1982-09-11 Semiconductor sensor

Publications (1)

Publication Number Publication Date
JPS5946846A true JPS5946846A (en) 1984-03-16

Family

ID=15676124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57158640A Pending JPS5946846A (en) 1982-09-11 1982-09-11 Semiconductor sensor

Country Status (1)

Country Link
JP (1) JPS5946846A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414293A (en) * 1992-10-14 1995-05-09 International Business Machines Corporation Encapsulated light emitting diodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414293A (en) * 1992-10-14 1995-05-09 International Business Machines Corporation Encapsulated light emitting diodes

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