JPS594216A - Surface acoustic wave device - Google Patents

Surface acoustic wave device

Info

Publication number
JPS594216A
JPS594216A JP11190682A JP11190682A JPS594216A JP S594216 A JPS594216 A JP S594216A JP 11190682 A JP11190682 A JP 11190682A JP 11190682 A JP11190682 A JP 11190682A JP S594216 A JPS594216 A JP S594216A
Authority
JP
Japan
Prior art keywords
acoustic wave
surface acoustic
wave device
electrodes
auxiliary electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11190682A
Other languages
Japanese (ja)
Inventor
Shoichi Kishi
正一 岸
Tsutomu Nishikawa
勉 西川
Atsushi Tani
谷 厚志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11190682A priority Critical patent/JPS594216A/en
Publication of JPS594216A publication Critical patent/JPS594216A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/145Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14597Matching SAW transducers to external electrical circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25Constructional features of resonators using surface acoustic waves

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To adjust easily the capacitance formed between plural auxiliary electrodes and an input/output transducer, by grounding a prescribed number of auxiliary electrodes among plural auxiliary electrodes. CONSTITUTION:The auxiliary electrodes 31 forming the transducer and the capacity and short-circuited electrodes 32 short-circuiting the auxiliary electrodes are constituted at the back side of the said piezoelectric substrate 10 in a figure. CX1, CX2 are variable capacitances in the figure and correspond to the auxiliary electrodes 31 and the short-circuited electrodes 32. The operation to vary the capacitance are done by cutting off successively the short-circuited electrodes 32. The CX1, CX2 being the capacitances between the transducer and ground are decreased through such operation.

Description

【発明の詳細な説明】 (a)  発明の技術分野 本発明は、圧電基板上に交叉指電極から成る入出力トラ
ンスジユーサを配設してなる弾性表面波装置に係り、特
に保証減衰Ji’t−容易、かつ精度よく改善できる弾
性表面波装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a surface acoustic wave device comprising an input/output transducer consisting of interdigitated electrodes disposed on a piezoelectric substrate, and particularly relates to a surface acoustic wave device with guaranteed attenuation Ji' t-Relating to a surface acoustic wave device that can be easily and accurately improved.

(b)  従来技術と問題点 弾性表面波装置、特にP波器等において大きな保証減衰
tを与えるには入出力間の浮遊容量及び相互誘導に起因
する電気的漏洩波を抑圧すればよいことが知られている
(b) Prior art and problems In order to provide a large guaranteed attenuation t in surface acoustic wave devices, especially P-wave devices, etc., it is necessary to suppress electrical leakage waves caused by stray capacitance and mutual induction between input and output. Are known.

従来より、かかる大歯な保証減衰量を得る弾性表面波装
置としては、第1図に示す如き構成のものがある。
Conventionally, there has been a surface acoustic wave device having a structure as shown in FIG. 1 as a surface acoustic wave device that obtains such a large amount of guaranteed attenuation.

以下、第1図並びに第2図を用いて従来の弾性表面波装
置を説明する。
Hereinafter, a conventional surface acoustic wave device will be explained using FIG. 1 and FIG. 2.

従来の弾性表面波装置の構成を第1図に示す。FIG. 1 shows the configuration of a conventional surface acoustic wave device.

第1図において10は圧電基板、11.21はトランス
ジューサ、12.13.22.23は共通電極である。
In FIG. 1, 10 is a piezoelectric substrate, 11.21 is a transducer, and 12.13.22.23 is a common electrode.

第2図は第1図の等価回路を示す図である。図において
Y、、 Y、は弾性表面波放射アドミタンス、CI、C
!はトランスジ瓢−サの静電容量←交叉指電極間の静電
容量)、C0は入出力間の浮遊容量、L11L!はり−
ド線等の自己誘導、Mは相互誘導を示す。
FIG. 2 is a diagram showing an equivalent circuit of FIG. 1. In the figure, Y is the surface acoustic wave radiation admittance, CI, C
! is the capacitance of the transformer ← capacitance between the crossed finger electrodes), C0 is the stray capacitance between input and output, and L11L! Acupuncture
M indicates self-induction such as a wire, and M indicates mutual induction.

伺、図においてリード線等の抵抗は微小である為省略し
である。
Note that the resistance of lead wires, etc. is omitted in the figure because it is minute.

かかる第1図に示す弾性表面波装置では、入力及び出カ
ドランスジューサ11.21間にシールド電&金設け、
浮遊容量による漏洩波音抑圧する。
In the surface acoustic wave device shown in FIG.
Suppresses leakage sound due to stray capacitance.

又は配St−工夫することにより相互誘導による漏洩波
を抑圧する等の方法がとられている。
Alternatively, methods such as suppressing leakage waves due to mutual induction by devising the arrangement have been taken.

かかる弾性表面波装置の特性は、弾性表面波放射アドミ
タンスY1、Yt1トランスジューサの静電容量C,,
C1,入出力間の浮遊容量C0、リード線等の自己誘導
L1、LI、相互誘導Mの値により定まり、特に相互誘
導Mが正の場合には通過帯域外に減衰極を待つ特性とな
り、該減衰極近傍では特に大きな保証減衰量が得られる
The characteristics of such a surface acoustic wave device include a surface acoustic wave radiation admittance Y1, a capacitance C of the Yt1 transducer,
It is determined by the values of C1, stray capacitance C0 between input and output, self-induction L1 of lead wires, LI, and mutual induction M. In particular, when mutual induction M is positive, the attenuation pole waits outside the passband. A particularly large guaranteed attenuation amount is obtained near the attenuation pole.

しかしながら、このような構成法では配線した後に保証
減衰量を調整することは困難であり、かつ高周波領域に
おいてはトランスジー−サの静電容量や入出力間の相互
誘導等の微小な相違により保証減衰量が大きく変化し均
一な特性が得られないという欠点がある。
However, with this configuration method, it is difficult to adjust the guaranteed attenuation after wiring, and in the high frequency range, the guaranteed attenuation is difficult to adjust due to minute differences in capacitance of the transformer and mutual induction between input and output. The disadvantage is that the amount of attenuation varies greatly and uniform characteristics cannot be obtained.

(0)  発明の目的 本発明は、かかる従来の弾性表面波装置の欠点を除去す
る如く、保証減衰量を容易、かつ精度よく改善できる弾
性表面波装置を提供すること全目的とする。
(0) Object of the Invention The entire purpose of the present invention is to provide a surface acoustic wave device that can easily and accurately improve the guaranteed attenuation amount so as to eliminate the drawbacks of the conventional surface acoustic wave devices.

((1)  発明の構成 本発明は、かかる目的を達成するために、圧電基板上に
交叉化、電極からなる入出力トランスジー−サを配設し
てなる弾性表面波装置において、該圧電基板表面あるい
は該圧電基板の該入出力トランスジーーサ実装面上に複
数の補助電極を設け、該複数の補助電極のうちの所定数
の補助電極を接地させることにより該補助電極と該入出
力トランスジューサ間に形成される容量を調整すること
を特徴とするものであるう (e)  発明の実施例 以下、本発明の弾性表面波装置の実施例全図面金用いて
説明する。第3図、第4図に本発明の弾性表向波装置の
実施例を示す。本図において第1図と同一部位は同一番
号を付しである。
((1) Structure of the Invention In order to achieve the above object, the present invention provides a surface acoustic wave device in which an input/output transducer consisting of crossed electrodes is disposed on a piezoelectric substrate. A plurality of auxiliary electrodes are provided on the surface or the input/output transducer mounting surface of the piezoelectric substrate, and a predetermined number of auxiliary electrodes among the plurality of auxiliary electrodes are grounded, thereby creating a connection between the auxiliary electrode and the input/output transducer. (e) Embodiments of the Invention Hereinafter, embodiments of the surface acoustic wave device of the present invention will be explained with reference to all drawings. The figure shows an embodiment of the surface acoustic wave device of the present invention. In this figure, the same parts as in FIG. 1 are given the same numbers.

トランスジューサと容量全形成するための補助電極31
と該補助電極を短絡させている短絡II極32を第3図
でに該圧電基板10の裏面に、第4図では該圧電基板1
0の実装面上に構成した形となっている。
Auxiliary electrode 31 for forming transducer and full capacitance
A short-circuit II pole 32 that short-circuits the auxiliary electrode and the auxiliary electrode is shown on the back side of the piezoelectric substrate 10 in FIG.
It is configured on the mounting surface of 0.

第5図は、第3図、第4図に示した本発明実施例の等価
回路會示す図である。本図においてCX、、CX、は可
変容量であり、第3図、第4囚に示した補助電極31と
短絡電極32に相当する。この可変操作は、短絡電極3
2を順次切断(第3図においては、該圧電基板10を透
過するレーザー等による)することによp行う。かかる
操作によって、トランスジューサとアース間の存置であ
る第5図図示のaXいCX、が減少し、保証減衰量が改
善されるものである。
FIG. 5 is a diagram showing an equivalent circuit diagram of the embodiment of the present invention shown in FIGS. 3 and 4. FIG. In this figure, CX, , CX are variable capacitors, and correspond to the auxiliary electrode 31 and the short-circuit electrode 32 shown in FIGS. 3 and 4. This variable operation is performed by short-circuiting electrode 3
2 is sequentially cut (in FIG. 3, using a laser or the like that passes through the piezoelectric substrate 10). By this operation, the presence between the transducer and the ground, aXCX shown in FIG. 5, is reduced, and the guaranteed attenuation is improved.

第6図は、本発明を適用した場合の減衰特性を示す図で
ある。
FIG. 6 is a diagram showing attenuation characteristics when the present invention is applied.

本図において破線(a)は本発明による構成金持った弾
性表向波装置の一特性例を示し、実線(b)はその弾性
界面波装置の短絡電極を適当に切断した後の特性例を示
す。図においてf。は中心周波数金示す。図に示される
ように、高周波側において保証減衰量が改善されている
ことがわかる。
In this figure, the broken line (a) shows an example of the characteristics of a surface acoustic wave device having a structure according to the present invention, and the solid line (b) shows an example of the characteristics after appropriately cutting the short-circuit electrode of the surface acoustic wave device. show. In the figure f. indicates the center frequency gold. As shown in the figure, it can be seen that the guaranteed attenuation amount is improved on the high frequency side.

以上容量を減少させる例により説明したが、逆に容量全
増加させて低周波側の保証減衰量金改善することも可能
である。例えば第4図に示した実施例において、短絡電
極32のない構成をし、必要により補助電極31?アー
スに短絡t&に接続してやれば(リード線接続、)・ン
ダ付等)、容量が増加し低周波側の保証減衰量が改善で
きる。
Although the above example has been explained in which the capacitance is decreased, it is also possible to increase the total capacitance to improve the guaranteed attenuation amount on the low frequency side. For example, in the embodiment shown in FIG. 4, there is no shorting electrode 32, and if necessary, the auxiliary electrode 31? If it is connected to the ground with a short circuit (T&) (lead wire connection, etc.), the capacity will increase and the guaranteed attenuation on the low frequency side can be improved.

(f)  発明の効果 以上、詳述した如く、本発明の弾性表面波装置によれば
、保証減衰量を容易に改善することができ、また、その
保証減衰量を改善する際、容易に改善することができる
という効果が得られる。
(f) Effects of the Invention As detailed above, according to the surface acoustic wave device of the present invention, the guaranteed attenuation amount can be easily improved, and when improving the guaranteed attenuation amount, it is easy to improve the guaranteed attenuation amount. The effect of being able to do this is obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の弾性表面波装置の構成を示す。 第2図は弾性表面波装置の等価回路を示す。第3図、第
4囚は本発明による構成會示す実施例である。第5図は
本発明による弾性表面波装置の等価回路である。第6図
は本発明による弾性表面波装置において保証減衰量金高
周波側において改善した特性例である。 図において、 10・・・・・・圧電基板 11.21・・・・・・トランスジューサ12.13.
22.23・・・・・・共通−極30・・・・・・圧電
基板の実装面 31・・・・・・補助電極 32・・・・・・短絡電極 Yi、Yt・・・・・・弾性表面波放射アドミタンスc
o・・・・・・入出力間の浮遊容量 C110!・・・・・・トランスジューサの静電容量L
IXTJ1・・・・・リード線等の自己誘導M・・・・
・・入出力間の相互誘導
FIG. 1 shows the configuration of a conventional surface acoustic wave device. FIG. 2 shows an equivalent circuit of the surface acoustic wave device. FIGS. 3 and 4 show an embodiment of the structure according to the present invention. FIG. 5 is an equivalent circuit of the surface acoustic wave device according to the present invention. FIG. 6 shows an example of the characteristics improved on the guaranteed attenuation high frequency side in the surface acoustic wave device according to the present invention. In the figure, 10...Piezoelectric substrate 11.21...Transducer 12.13.
22.23...Common-pole 30...Piezoelectric substrate mounting surface 31...Auxiliary electrode 32...Short-circuit electrode Yi, Yt...・Surface acoustic wave radiation admittance c
o... Stray capacitance between input and output C110!・・・・・・Transducer capacitance L
IXTJ1...Self-guidance M for lead wires, etc.
・Mutual induction between input and output

Claims (1)

【特許請求の範囲】[Claims] 圧電基板上に交叉指電極からなる入出カドランスジ集−
サ全配設してなる弾性表面波装置において、該圧電基板
表面あるいは該圧電基板の該入出力トランスジーーサ爽
装面上に複数の補助電極全iけ、該複数の補助電極のう
ちの所定数の補助電極を接地させることにより該補助電
極と該入出カドランスジューサ間に形成される容it−
調整することを特徴とする弾性表面波装置。
A collection of input and output quadrature stripes consisting of interdigitated electrodes on a piezoelectric substrate.
In the surface acoustic wave device, a plurality of auxiliary electrodes are provided on the surface of the piezoelectric substrate or on the surface of the input/output transformer of the piezoelectric substrate, and a predetermined portion of the plurality of auxiliary electrodes is provided. By grounding several auxiliary electrodes, a volume is formed between the auxiliary electrodes and the input/output transducer.
A surface acoustic wave device characterized by adjustment.
JP11190682A 1982-06-29 1982-06-29 Surface acoustic wave device Pending JPS594216A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11190682A JPS594216A (en) 1982-06-29 1982-06-29 Surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11190682A JPS594216A (en) 1982-06-29 1982-06-29 Surface acoustic wave device

Publications (1)

Publication Number Publication Date
JPS594216A true JPS594216A (en) 1984-01-11

Family

ID=14573083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11190682A Pending JPS594216A (en) 1982-06-29 1982-06-29 Surface acoustic wave device

Country Status (1)

Country Link
JP (1) JPS594216A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0435515A (en) * 1990-05-31 1992-02-06 Toko Inc Surface acoustic wave device
JP2002271165A (en) * 2001-03-13 2002-09-20 Kyocera Corp Surface acoustic wave filter and method of adjusting characteristics thereof
US7301421B2 (en) * 2004-06-28 2007-11-27 Kyocera Corporation Surface acoustic wave device, manufacturing method therefor, and communications equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0435515A (en) * 1990-05-31 1992-02-06 Toko Inc Surface acoustic wave device
JP2002271165A (en) * 2001-03-13 2002-09-20 Kyocera Corp Surface acoustic wave filter and method of adjusting characteristics thereof
US7301421B2 (en) * 2004-06-28 2007-11-27 Kyocera Corporation Surface acoustic wave device, manufacturing method therefor, and communications equipment

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