JPS5927573A - Phototrigger thyristor element - Google Patents
Phototrigger thyristor elementInfo
- Publication number
- JPS5927573A JPS5927573A JP57137701A JP13770182A JPS5927573A JP S5927573 A JPS5927573 A JP S5927573A JP 57137701 A JP57137701 A JP 57137701A JP 13770182 A JP13770182 A JP 13770182A JP S5927573 A JPS5927573 A JP S5927573A
- Authority
- JP
- Japan
- Prior art keywords
- light guide
- receptor
- internal light
- thyristor
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 20
- 239000010980 sapphire Substances 0.000 claims abstract description 20
- 239000000853 adhesive Substances 0.000 claims abstract description 13
- 230000001070 adhesive effect Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims description 10
- 230000001960 triggered effect Effects 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 238000005253 cladding Methods 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 2
- 230000031700 light absorption Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910000640 Fe alloy Inorganic materials 0.000 abstract description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract description 2
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 238000005219 brazing Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、光トリガサイリスタ素子に関し、舶にパッ
ケージに取付けられ、気密封！トされた光取入口の構造
に関するものである。[Detailed Description of the Invention] The present invention relates to a light-triggered thyristor element that is installed in a package on a ship and hermetically sealed! The present invention relates to the structure of the light intake port.
第１図は従来の光トリガザイリスタの構造を示す断■１
図である。図において、（１）は、その上面にトリガ用
の受光部（１ａ）を有する光トリガサイリスタのベーシ
ックエレメント、（２）および（３）は電極、（４）は
、たとえばアルミナセラミックス等の絶縁物でできたパ
ッケージで、上記電極（２）および（３）をそれぞれに
設けられたフランジ部（２０および（３ａ）を−用いて
ロー付や溶接等の適当な方法で気密に固定している。４
５１は、上記パッケージ（４）の側面に設けられた穴に
ロー付等の適当な方法で気密に固定されたリセプタであ
る。（６）はサイリスタ素子の外部からザイリスタをト
リガするための光信号を上記ベーシックエレメント（１
）にある受光部（１ａ）に伝達さぜる内部ライトガイド
であり、その光の入口側には円筒状の内部ライトガイド
スリーブ（７）が、エポキシ樹脂等で固定されている。Figure 1 is a cross section showing the structure of a conventional optical trigger zyristor.
It is a diagram. In the figure, (1) is a basic element of an optical trigger thyristor that has a trigger light receiving part (1a) on its upper surface, (2) and (3) are electrodes, and (4) is an insulating material such as alumina ceramics. The electrodes (2) and (3) are hermetically fixed by an appropriate method such as brazing or welding using flanges (20 and (3a)) provided on each electrode. 4
Reference numeral 51 denotes a receptor that is airtightly fixed to a hole provided in the side surface of the package (4) by an appropriate method such as brazing. (6) transmits an optical signal for triggering the thyristor from outside the thyristor element to the basic element (1).
), and a cylindrical internal light guide sleeve (7) is fixed with epoxy resin or the like on the light entrance side.
さらに上記内部ライトガイドスリーブ（７）は、」二記
すセプタ（５）の一部とエポキシ樹脂等を用いて固定さ
れている。（８）は光トリガザイリスクをトリがさせる
だめの光信号発生源から光を導ひいてくる、たとえはバ
ンドル７７ イハ（ｂｕｎｄｌｅ ｆｉｂｅｒ）の様な
外部ライトガイド（９）を中心に有する外部ライトガ・
ｆトスリーブである。また上記内部ライトガイドスリー
ブ（７）と外部ライトガイドスリーブ（８）の外径は一
致させである。Further, the internal light guide sleeve (7) is fixed to a part of the septa (5) described in "2" using epoxy resin or the like. (8) is an external light guide having an external light guide (9) at its center, such as a bundle fiber, which guides light from a light signal generation source to trigger a light trigger.・
It is a sleeve. Further, the outer diameters of the inner light guide sleeve (7) and the outer light guide sleeve (8) are made to match.
（１０１は整列スリーブで、その開口部（１０ａ）が上
記′ライトガイドスリーブ（７）および（８）の外径と
同じ内径を持つ円筒であり、これをライトガイドスリー
ブ（７）および（８）の外径にかぶせることにより、軸
合せをしながら結合している。、Ｉｌｌはコネクタでね
じ等の適当な方法で、上記リセプタ（５）と結合されて
おり、上記外部ライトガイドスリーブ（８）が光サイリ
スタから離れない様にしている。(101 is an alignment sleeve, which is a cylinder whose opening (10a) has the same inner diameter as the outer diameter of the light guide sleeves (7) and (8), and is The outer light guide sleeve (8) is connected to the outer light guide sleeve (8) by fitting it over the outer diameter of the outer light guide sleeve (8). to prevent it from leaving the optical thyristor.
従来の光サイリスタ素子はこ□の様な構造になっていた
ので、素子使用時の素子の加熱および停止時の冷却によ
る温度サイクルが加わると、ライトガイド（６）と内部
ライトガイドスリーブ（７）および内部ライトガイドス
リーブ（７）とリセブタ（５）を結合しているエポキシ
樹脂等の結合剤との界面にはく離が生じ、スローリー゛
りが生じ、パッケージ内に水分その他の八−）だ外気が
入り、素子特性を劣化させてし、まうという欠点があっ
た。また、整列スリーブ叫は、取はずし可能となってい
るが、組立時、このスリーブ（ｌ■がなくても外観上は
変わらないので、組み忘れによる結合損失の増加が生ず
る危険性があるという欠点もあった。また、組立て時に
、このスリーブ（旧を落としてなくしたりす７る可能性
があるという欠点もあった。Conventional optical thyristor elements had a structure like this □, so when the temperature cycle due to heating of the element during use and cooling when stopped, the light guide (6) and internal light guide sleeve (7) Also, peeling occurs at the interface between the internal light guide sleeve (7) and the binder such as epoxy resin that binds the receptacle (5), causing slow leakage, and moisture and other external air inside the package. This has the disadvantage that it causes interference, deteriorates the device characteristics, and causes damage. In addition, although the alignment sleeve can be removed, the appearance remains the same even without this sleeve during assembly, so there is a risk of increased coupling loss due to forgetting to assemble it. There was also a drawback that there was a possibility that this sleeve (the old one) could be dropped and lost during assembly.
この発明は上記の様な従来の光トリガサイリスク素子の
構造の欠点を１塗去するためになされたもの両側から同
軸に明け、そしてその段差部にサファイア板をロー刊等
により気密に封止したリセプタを用いる構造により気密
性かあり、しかも、組立てミスを起こしにくい光トリガ
サイリスク素子を得ることを目的としている。This invention was made to eliminate the above-mentioned drawbacks of the structure of the conventional light-triggered cyrisk element.A coaxial opening is made from both sides, and a sapphire plate is hermetically sealed in the step part using a rotary plate or the like. The object of the present invention is to obtain a light-triggered thyrisk element that has a structure using a receptor that is airtight and is less prone to assembly errors.
第２図は、この発明の一実施例を示す断面図であり、ま
た第３図は、特にリセプタ部分を示す部分の断面図であ
る。図中（１）〜（４）、（６）、および（８）〜（ｌ
Ｏｌは従来と同一または相当部品である。（１５）は本
発明により新しく考案されたリセブタで、その素子内面
側には、内部ライトガイド（６）と同じか、才たは少し
大きな穴（１５ａ）が明け°Ｃあり、また素子外面側に
は、外部ライトガイドスリーブ（８）の外形と同じ直径
で、しかも上記穴（１５ａ）と同軸に穴（１５ｂ）が明
けである。そし１ン−■只−ヅ万コシ（４）にロー刊等
の適当な方法で気密に固定されている。（１りはその周
辺部にメタライズをし、土、記すセプタ（１５）内の穴
（１５ａ）と（１５ｂ）の段差部にロー付等の適当な方
法で取伺けられたサファイアの薄い板である。また（１
３は接着剤であり、内部ライトガイド（６）をリセプタ
（１５）に固定している。なお、リナプタ（１９は、前
記パッケージ（４）や上記サファイア板（１２＋と熱膨
張率の比較的近いニッケル鉄合金や、ニッケルクロム鉄
合金等を用いることが望ましい。FIG. 2 is a cross-sectional view showing one embodiment of the present invention, and FIG. 3 is a cross-sectional view of a portion particularly showing the receptor portion. In the figure, (1) to (4), (6), and (8) to (l
Ol is the same or equivalent part as the conventional one. (15) is a receptacle newly devised according to the present invention, and there is a hole (15a) on the inner surface of the element that is the same size or slightly larger than the internal light guide (6), and on the outer surface of the element. The hole (15b) has the same diameter as the outer shape of the external light guide sleeve (8) and is coaxial with the hole (15a). It is then airtightly fixed to the base (4) by a suitable method such as a low plate. (1) A thin sapphire plate with metallization around the periphery, and a thin plate of sapphire attached to the stepped part of the hole (15a) and (15b) in the septa (15) by an appropriate method such as brazing. Also, (1
3 is an adhesive that fixes the internal light guide (6) to the receptor (15). Note that it is preferable to use a nickel-iron alloy, a nickel-chromium-iron alloy, or the like for the Linaputa (19), which has a relatively similar coefficient of thermal expansion to the package (4) and the sapphire plate (12+).
上記のように構成された光トリガサイリスタの特にリセ
プタ＋１５）部では、ロー付等の比較的高い温度Ｆ”ｌ
−７フイア板（１２１を気密固定し工いるので、素子運
転停止時の温度変化程度では、はとんどリ−りは生じな
い。従って長期にわたり初期素子特性を維持することが
でき、信頼性の高い光トリガサイリスタを得ることが出
来る。さらに、リセプタ０５）は、それ自体で内部ライ
トガイド（６）と外部ライトガイド（９）との軸合ぜを
するので、従来の様に整列スリーブ＋Ｉｆ）は必要なく
、従って組立時に整列スリーブαｌ）を組み忘れたり、
なくしたりするという作業ミスをなくすることができる
。Particularly in the receptor +15) part of the optically triggered thyristor configured as above, the temperature F"l is relatively high due to brazing, etc.
-7 Since the fire plate (121) is fixed in an airtight manner, leakage will hardly occur even if the temperature changes when the device is stopped. Therefore, the initial device characteristics can be maintained for a long period of time, improving reliability. Furthermore, since the receptor 05) aligns the internal light guide (6) and the external light guide (9) by itself, it is possible to obtain a light-triggered thyristor with a high ) is not necessary, so you may forget to assemble the alignment sleeve αl) during assembly, or
You can eliminate work errors caused by losing items.
なお上記実施例では、サファイア板＋１２１の表面（１
２ａ）および、・サファイア板（喝と内部ライトガイド
（６）の間にはなにも施していないが、ここに空気層が
あると、サファイア板（１２の屈接率が高いため、大き
な反射損失（約１５〜２０９６ ）を生じてしまう。そ
こで、サファイア板０２＋の素子外側表面（１２ａ ）
には、たとえば弗化マグネシウム（ＭｇＦｚ）の薄膜等
による反射防止膜を付け、さらにサファイア板０′ＩＪ
と内部ライトガイド（６）との間にはレンズ接着材等の
マツチング剤を挿入し、反射損失を１〜２９６程度にま
で小さくすることができる。Note that in the above embodiment, the surface of the sapphire plate +121 (1
2a) and - Although there is nothing installed between the sapphire plate and the internal light guide (6), if there is an air layer here, the sapphire plate (12) has a high refractive index, so it will cause a large reflection. This results in a loss (approximately 15 to 2096 Ω).Therefore, the element outer surface (12a) of the sapphire plate 02+
For example, an anti-reflection film such as a thin film of magnesium fluoride (MgFz) is attached to the sapphire plate 0'IJ.
By inserting a matching agent such as a lens adhesive between the inner light guide (6) and the inner light guide (6), the reflection loss can be reduced to about 1 to 296.
また、内部ライトガイド（６）は、一般的に、比較的屈
折率の高いガラスでてきた中央のコア部とそのまわりの
比較的屈折率の低いガラスでできたクラッド部を有する
ものが使われている。これは、第１図において、内部ラ
イトカイト（６）と内部ライトガイドスリーブ（７）と
の界面での光の吸収による損失を生じさせない様に光を
コア部に閉じ込めておくためである。ところで、第３図
において、内部ライトガイド（６）は、接着剤（１３）
によって囲才れており、才た、この接着剤（１３）は、
気密を保つ必要がないので、比較的自由にその種類を選
ぶことができるわりである。ここでその材質にライトガ
イド（６）の屈折率より十分に低い屈折率、たとえば内
部ライトカイト（６）の９０〜９５’９６程度の屈折率
で、光の吸収の少ないものを選べば、この接着剤（１３
）は、従来のライトガイド（６）のクラッド部の役割を
するので、従って、ライトガイド（６）は、クラッド部
のない屈折率の高いしかもＥドー屈折率のガラス棒材を
用いて安価に作ることができる。たとえば−例として、
ライトガイド（６）に屈折率１．６２のガラスを用い、
接着剤＋１３１に屈折率１．５で吸収率５９６以下のシ
リコン樹脂を用いることができる。また前記のサファイ
ア板（１２１と内部ライトガイド（６）の間のマツチン
グ剤は、サファイアと内部ライトガイドの屈折率の中間
程度のものが望ましいが、双方より多少低くても、たと
えばサファイア板０′ＩＪの８５９６程度であっても反
射損失１９６以下というかなりの効果が期待でき、従っ
て、このマツチング剤と内部ライトガイド固定用で、し
かも内部ライトガイド（６）のクラッド層の役目をする
接着剤（１３と、同一でもよい。In addition, the internal light guide (6) generally has a central core made of glass with a relatively high refractive index and a cladding made of glass with a relatively low refractive index around it. ing. This is to confine light in the core portion so as not to cause loss due to absorption of light at the interface between the internal light kite (6) and the internal light guide sleeve (7) in FIG. 1. By the way, in FIG. 3, the internal light guide (6) is glued with adhesive (13).
This adhesive (13) is made of
Since there is no need to maintain airtightness, the type can be chosen relatively freely. Here, if you select a material with a refractive index sufficiently lower than that of the light guide (6), for example, a refractive index of about 90 to 95'96 of the internal light kite (6), and which absorbs less light, this Adhesive (13
) serves as the cladding part of the conventional light guide (6), therefore, the light guide (6) can be made inexpensively by using a glass rod with a high refractive index and an E-do refractive index without a cladding part. can be made. For example - as an example,
Using glass with a refractive index of 1.62 for the light guide (6),
Silicone resin having a refractive index of 1.5 and an absorption rate of 596 or less can be used as the adhesive +131. Further, the matching agent between the sapphire plate (121) and the internal light guide (6) is preferably one with a refractive index intermediate between that of sapphire and the internal light guide, but even if it is slightly lower than both, for example, the sapphire plate 0' Even if the IJ is about 8596, a considerable effect of reflection loss of 196 or less can be expected. Therefore, this mating agent and the adhesive (which is used for fixing the internal light guide and also serves as the cladding layer of the internal light guide (6)) It may be the same as 13.
た２つの径の穴をリセプタの両側から同軸に明け、そし
てその段差部にサファイア樗をロー付等により気密封止
したリセブタを用いる構造により、信頼性のある気密構
造を有する光トリガサイリスタパッケージが得られ、さ
らに整列スリーブの組み忘れによる外部ライトガイドと
内部ライトガイドの軸ずれ損失の増加や、整列スリーブ
の紛失等の作業ミスがなくなるという効果がある。A light trigger thyristor package with a reliable airtight structure is created by using a receptor with two diameter holes coaxially drilled from both sides of the receptor and hermetically sealed with sapphire wood at the stepped part by brazing etc. Furthermore, there is an effect that increases in misalignment loss between the external light guide and the internal light guide due to forgetting to assemble the alignment sleeve, and operational errors such as loss of the alignment sleeve are eliminated.
第１図は従来の光ト：）がサイリスク素子の構造を示す
断面図、第２図は本発明の一実施例の光トリがサイリス
タ素子の構造を示す断面図、第３りＩはそのリセブタ回
りの部分断面図である。
図において、（１）はベーシックエレメント、（１ａ）
は受光部、（２）は電極、（２ａ）はフランジ、（３）
は電極、（３ａ）はフランジ、（４）は絶縁物でできた
パッケージ、（６）は内部ライトガイド、（７）は内部
ライトガイドスリーブ、（８）は外部ライトガイドスリ
ーブ、（９）は外部ライトガイド、ｆｌｏｌはコネクタ
、（１１）は整列スリーブ； ｆ＋２）はサファイア板
、（１３１は接着剤、（１５）はリセプと同軸に明けら
れた穴である。
なお、図中同一符号は同一または相当部分を示す。
代 理 人 葛 野 信 −第
１図
第２図
１ら
第３図
丁、 イ売 浦 ｉＥ 、１ｊ： （自発）ｆＩＩｉ
’ｌ’ Ｌ＋長官殿
］、 ｌＴｆ’ｌの表！＋＜ ｆ１’ｌｆ
’ｌｉ昭 ５７−１３７７０１号２、発明の名称
光トリヵツィリスタ素Ｊ
３、 ｒｌｌｉ＋「をＪ−る古
（１）第１図および第２図を別紙のとおり！ＩＪ正する
。
ｆ２１１１１１１１１ｉｔをつぎのとおリボ］圧する。Fig. 1 is a sectional view showing the structure of a conventional optical thyristor element; Fig. 2 is a sectional view showing the structure of a thyristor element according to an embodiment of the present invention; FIG. In the figure, (1) is a basic element, (1a)
is the light receiving part, (2) is the electrode, (2a) is the flange, (3)
is the electrode, (3a) is the flange, (4) is the package made of insulator, (6) is the internal light guide, (7) is the internal light guide sleeve, (8) is the external light guide sleeve, and (9) is the In the external light guide, flol is a connector, (11) is an alignment sleeve; f+2) is a sapphire plate, (131 is an adhesive, and (15) is a hole drilled coaxially with the receptacle. Note that the same reference numerals in the figures are the same) or a corresponding portion. Agent Makoto Kuzuno - Figure 1, Figure 2, Figures 1 and 3, Iuriura iE, 1j: (Spontaneous) fIIi
'l' L+Mr. Secretary], lTf'l table! +<f1'lf
'li Sho 57-137701 No. 2, name of the invention Optical trikatzirista element J 3, rlli+' J-ru (1) Figures 1 and 2 are as shown in the attached sheet! IJ correct. ] Press.
Claims (4)
イリスタベーシックエレメントと、該ベーシックエレメ
ントの上下面に設けられた２つの電極と。 この２つの電極をフランジを介して気密に固定する絶縁
物でできたパッケージと、このパッケージの側面に明け
られた六番こ気密固定されたリセブタと、サイリスタト
リガ用の光信号を上記ベーシックエレメント上の受光部
に導く内部ライトガイドと、外部から来る上記サイリス
タトリガ用の光信号を上記内部ライトガイドに導く外部
ライトガイドと、上興外部ライトガイドを中心に有する
外部ライトガイドスリーブと、手触ｒ１ＰＩ公Ｊライト
ガイドの段差部にロー刊等により気密固定されたサファ
イア板と、上記リセプタと内部ライトガイドとを固定す
る接着剤とを備えたことを特徴とする光トリガサイリス
タ素子。(1) A photo-trigger thyristor basic element having a light-receiving section on its upper surface, and two electrodes provided on the upper and lower surfaces of the basic element. A package made of an insulator that airtightly fixes these two electrodes via a flange, a six-hole receptacle that is airtightly fixed on the side of this package, and an optical signal for thyristor triggering on the above basic element. an internal light guide that guides the optical signal for the thyristor trigger coming from the outside to the internal light guide, an external light guide sleeve that has the Kamiko external light guide in the center, and a touch r1PI. A light-triggered thyristor element comprising: a sapphire plate airtightly fixed to a stepped portion of a light guide by a method such as a rotor, and an adhesive for fixing the receptor and the internal light guide.
ァイア板と内部ライトガイド端面間にマツチング剤を挿
入したことを特徴とする特許請求の範囲第１項記載の光
トリがサイリスタ素子。(2) An optical thyristor element according to claim 1, characterized in that an anti-reflection film is applied to the outer surface of the sapphire plate, and a matching agent is inserted between the sapphire plate and the end face of the internal light guide.
着剤として内部ライトガイドより低い屈折率で光吸収の
少ない接着剤を用い、さらに内部ライトガイドをクラッ
ド層のない単一屈折率の材料で構成したことを特徴とす
る特許請求の範囲第１項又は第２項記載の光トリガサイ
リスタ素子。(3) An adhesive with a lower refractive index and less light absorption than the internal light guide was used to fix the internal light guide and the receptor, and the internal light guide was made of a single refractive index material without a cladding layer. The optically triggered thyristor element according to claim 1 or 2, characterized in that:
定に、内部ライトガイドとリセブタの固定に使用する接
來剤と同じ接着剤を月１いたことを特徴とする特許請求
の範囲第２項また■第３項記載の光トリガサイリスタ素
子。(4) The same adhesive as the adhesive used for fixing the internal light guide and the receptacle was used once a month to fix the sapphire plate and the internal light guide transfusion. The optically triggered thyristor element according to item 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57137701A JPS5927573A (en) | 1982-08-06 | 1982-08-06 | Phototrigger thyristor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57137701A JPS5927573A (en) | 1982-08-06 | 1982-08-06 | Phototrigger thyristor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5927573A true JPS5927573A (en) | 1984-02-14 |
| JPH0139659B2 JPH0139659B2 (en) | 1989-08-22 |
Family
ID=15204790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57137701A Granted JPS5927573A (en) | 1982-08-06 | 1982-08-06 | Phototrigger thyristor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5927573A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10436329B2 (en) | 2015-10-05 | 2019-10-08 | Ihara Science Corporation | Valve having a stem spaced away from a valve seat and configured to rotate around an axis parallel with an opening surface of the valve seat |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53147489A (en) * | 1977-05-26 | 1978-12-22 | Electric Power Res Inst | Light trigger thyristor package |
| JPS54136283A (en) * | 1978-04-14 | 1979-10-23 | Fuji Electric Co Ltd | Semiconductor photo detector |
| JPS5653371U (en) * | 1979-10-01 | 1981-05-11 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54133775A (en) * | 1978-04-08 | 1979-10-17 | Takei Kiki Kogyo Kk | Device for pressurizing finger nail |
-
1982
- 1982-08-06 JP JP57137701A patent/JPS5927573A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53147489A (en) * | 1977-05-26 | 1978-12-22 | Electric Power Res Inst | Light trigger thyristor package |
| JPS54136283A (en) * | 1978-04-14 | 1979-10-23 | Fuji Electric Co Ltd | Semiconductor photo detector |
| JPS5653371U (en) * | 1979-10-01 | 1981-05-11 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10436329B2 (en) | 2015-10-05 | 2019-10-08 | Ihara Science Corporation | Valve having a stem spaced away from a valve seat and configured to rotate around an axis parallel with an opening surface of the valve seat |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0139659B2 (en) | 1989-08-22 |
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