JPS5927531A - Sample board for vapor growth - Google Patents
Sample board for vapor growthInfo
- Publication number
- JPS5927531A JPS5927531A JP13605282A JP13605282A JPS5927531A JP S5927531 A JPS5927531 A JP S5927531A JP 13605282 A JP13605282 A JP 13605282A JP 13605282 A JP13605282 A JP 13605282A JP S5927531 A JPS5927531 A JP S5927531A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- growth
- mgo
- mounting surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は気相成長方法において基板を搭載する試料台に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a sample stage on which a substrate is mounted in a vapor phase growth method.
半導体材料、誘電体材料、磁性材料などの各測材料の膜
が気相成長方法によって形成されており、気相法はきわ
めて重要な膜形成技術である。気相成長方法において膜
はそれぞれの目的に応じた基板上に形成される。そして
基板表面は一般には鏡面状に精密研磨され、清浄にされ
ている。そして良質の膜を基板上に形成するために、基
板は、表面平坦性、清浄性、結晶性等の表面状態が膜形
成に必要な条件を満足していなければならない。そして
この基板の表面状態は気相法で膜を形成する場合には膜
形成温度、成分ガス濃等が膜形成条件として所望の定常
状態に達して膜形成が開始される直前まで保持されなけ
ればならない。しかし気晴間（以下、条件到達期間と称
する）に長時間を要し、基板設定と同時に定常状態で直
ちに膜形成をするということは不可能である。Films of various measurement materials such as semiconductor materials, dielectric materials, and magnetic materials are formed by vapor phase growth, and vapor phase growth is an extremely important film formation technique. In the vapor phase growth method, a film is formed on a substrate depending on its purpose. The surface of the substrate is generally precisely polished to a mirror surface and cleaned. In order to form a high-quality film on a substrate, the surface condition of the substrate, such as surface flatness, cleanliness, and crystallinity, must satisfy the conditions necessary for film formation. When forming a film using a vapor phase method, the surface condition of this substrate must be maintained until just before the film formation temperature, component gas concentration, etc. reach the desired steady state as film formation conditions and film formation begins. No. However, the distraction period (hereinafter referred to as the condition attainment period) takes a long time, and it is impossible to immediately form a film in a steady state at the same time as setting the substrate.
条件到達期間においては成長領域は最適の膜形成条件か
らずれており、この期間に気相の成分ガスが基板表面に
接触すると異相物質が析出したり、腐食を受けたりして
、基板表面状態が変質してし才い、良質の膜を形成する
ことができなくなる。During the period when the conditions are reached, the growth region deviates from the optimal film formation conditions, and when component gases in the gas phase come into contact with the substrate surface during this period, foreign phase substances may precipitate or be corroded, causing the substrate surface condition to change. It deteriorates and becomes unable to form a good quality film.
従って、条件到達期間には何らかの手段によって気相ガ
ス成分が接触しないように基板表面を保護しなければな
らない。従来、この基板保栃方法として第１図に示した
ような二つの方向が知られている。第一の方法は第１図
＜ａ）に示す方法で、反応管１に設置した試料台２に基
板３を載せて、試料台にＭ４を被せて気相中の成分ガス
から基板を保護する方法である。この方法では気相の膜
形成条件が最適の定常状態に達してから蓋を開いて成長
を開始し、蓋を閉じることによって成長を終了すること
によって膜形成をするものである。第２の方法は第１図
（ｂ）に示す方法で反応管５の内部に内管６を設けて二
重構造とし、内管内に試料台７を設置し、内管に不活性
ガス等の保護ガスを流して基板表面を保護する方法であ
る。定常状態に到達後保護ガスを止めることによって気
相成分ガスを内管内に導入して成長を開始する。Therefore, it is necessary to protect the substrate surface by some means so that the vapor phase gas components do not come into contact with it during the period when the conditions are reached. Conventionally, two methods of preserving the substrate as shown in FIG. 1 are known. The first method is the method shown in Figure 1<a), in which the substrate 3 is placed on the sample stand 2 installed in the reaction tube 1, and the sample stand is covered with M4 to protect the substrate from the component gases in the gas phase. It's a method. In this method, the film is formed by opening the lid to start growth after the gas phase film formation conditions reach an optimal steady state, and closing the lid to end the growth. The second method is the method shown in Fig. 1(b), in which an inner tube 6 is provided inside the reaction tube 5 to create a double structure, a sample stage 7 is installed inside the inner tube, and an inert gas or the like is supplied to the inner tube. This method protects the substrate surface by flowing a protective gas. After reaching a steady state, the protective gas is stopped and the vapor phase component gas is introduced into the inner tube to start growth.
しかし、上述の二つの方法はそれぞれ欠点を有する。第
１の蓋を皺せる方法は外部から蓋の開閉が容易に操作で
きなければならないため、完全な密封状態屹して、気相
中のガスの混入を完全に防止する構造にすることは不可
能であり、伺んらかの間隙がふたと試料台の接触部分に
できるためにそこからガスが混入しｔ基板表面を変質さ
ぜることが多い。また第２の保護ガスを用いる方法は反
応管を２′Ｎ構造にしなければならず、反応管の成長領
域が狭くなり、その分反応管を大きくしなければならな
い。才た反応管の内部構造が複雑になり、ガスの均一な
流れを達成することがむつかしく均一な膜を形成するこ
とが出来ない。However, each of the above two methods has drawbacks. The method of wrinkling the first lid requires that the lid can be easily opened and closed from the outside, so it is impossible to create a structure that completely seals and completely prevents gas from entering the gas phase. However, since a small gap is formed at the contact area between the lid and the sample stage, gas often enters from there and alters the quality of the substrate surface. Further, in the method using the second protective gas, the reaction tube must be made into a 2'N structure, and the growth region of the reaction tube becomes narrower, so that the reaction tube must be made larger accordingly. The internal structure of a conventional reaction tube becomes complicated, making it difficult to achieve a uniform flow of gas and making it impossible to form a uniform film.
本発明は気相成長における基板表面保護に関する従来方
法の欠点を克服して基板表面を成長開始直前まで保護ず
忘基板搭載用の試料台を提供するものである。The present invention overcomes the drawbacks of conventional methods for protecting the substrate surface during vapor phase growth and provides a sample stage for mounting a substrate without protecting the substrate surface until immediately before the start of growth.
本発明による試料台は基板を搭載する基板台と蓋とから
なる試料台で、蓋と基板台の基板搭載面とのなす空間に
必要な任意のガスを試料台の外部空間を流れるガスとは
独立に流すことができる構造のもので、第２図に具体例
の概略断面図を示す。The sample stage according to the present invention is a sample stage consisting of a substrate stage on which a substrate is mounted and a lid, and any gas required for the space formed between the lid and the substrate mounting surface of the substrate stage is supplied to the gas flowing in the external space of the specimen stage. It has a structure that allows it to flow independently, and a schematic cross-sectional view of a specific example is shown in FIG.
試料台は基板を搭載する中空の基板台９と蓋１０からな
り、基板台はガス導入管１１を備えており、また基板搭
載面１２に通気穴１３がおいており、ガス導入管によっ
て中空部分１４に導入されたガスは矢印で示すように通
気穴１３より基板搭載面と蓋との間に流れて基板１５を
保護するものである。また通気穴は複数形成することも
可能である。なお第２図において基板搭載面は勾配を有
しているが、これは膜の均一性を良（するためのもので
ある。The sample stand consists of a hollow substrate stand 9 on which a substrate is mounted and a lid 10. The substrate stand is equipped with a gas introduction pipe 11, and a ventilation hole 13 is provided on the substrate mounting surface 12. The gas introduced into 14 flows through the ventilation hole 13 between the substrate mounting surface and the lid, as shown by the arrow, and protects the substrate 15. It is also possible to form a plurality of ventilation holes. Note that although the substrate mounting surface has a slope in FIG. 2, this is to improve the uniformity of the film.
本発明による試料台を用いれば保護ガスと蓋とによって
完全に基−板が保護される上に反応管を２重管をこする
ということもなく、均一で良質の膜形成が達成できる。By using the sample stage according to the present invention, the substrate is completely protected by the protective gas and the lid, and there is no need to rub the reaction tube twice, making it possible to achieve uniform and high-quality film formation.
以下実施例によって説明する。This will be explained below using examples.
実施例
シリコン単結晶上にマグネシアスピネルＭｇＯ・Ｍ、０
３の単結晶膜を成長させた。Example Magnesia spinel MgO.M, 0 on silicon single crystal
A single crystal film of No. 3 was grown.
第３図に、本実施例において用いた反応管とその内部に
設置された本発明による試料台の概略断面図を示す。FIG. 3 shows a schematic cross-sectional view of the reaction tube used in this example and the sample stage according to the present invention installed inside the reaction tube.
原料室１６にアルミニウム（Ａｌ）１７と塩化マグネシ
ウムＭｇＣ１ｔ１８を設置し、Ａｌはガス導入口１９か
ら導入されたＨＣｌガスと反応してへｅｃ、ｅ３ガスに
なり、蒸発したＭｇＣｄ、カスと伴にキＡ・リアガスの
Ｎ、ガスによって成長室２０に輸送され、成長室で、ガ
ス輸送管２１を通して輸送されてきた炭酸ガス、及び水
素ガスと混合されて、次式の反応
２ＡＩＣ１ｌｓ＋ＭｇＣ４＋ ４ＣＯ＋４＃：％ ＝＞
Ｒ４ｇＯ−ＡＡ’、Ｏ，−１−４Ｃｏ ＋５ｌ−Ｊ、
Ｃｌによって、マグネジ）′スピネルＭｇＯ・Ｕ、Ｏｌ
が生成されると考えられ、シリコン１１（結晶上にエピ
タキシャル成長）”る。しかしこのとき気相条件がＭｇ
Ｏ，ｋｌｔＯ，の、／ｉｔ適生酸生成条件ずれたときに
気相中の成分カスと基板表面が接触すると基板表面は腐
食を受り℃その上に生成される膜は表面平坦性の悪い白
濁した膜になる。才たＭｇ０−ＡＡｉ２（Ｊ、の生成前
に８ｉ基板が酸化されて非晶質の二酸化シリコンＳｉｎ
、ができるために、Ｍｇ０−ＩＵ、 ０．は単結晶膜と
ならず多結晶膜になってし才う。Aluminum (Al) 17 and magnesium chloride MgC1t18 are installed in the raw material chamber 16, and the Al reacts with the HCl gas introduced from the gas inlet 19 to become ec, e3 gas, and the gas is removed along with evaporated MgCd and scum. A.N in the rear gas is transported to the growth chamber 20 by the gas, and mixed with carbon dioxide gas and hydrogen gas transported through the gas transport pipe 21 in the growth chamber, resulting in the reaction of the following formula: 2AIC1ls+MgC4+ 4CO+4#:% =>
R4gO-AA', O,-1-4Co +5l-J,
By Cl, Magnesium)' Spinel MgO U, Ol
It is thought that silicon 11 (epitaxially grown on the crystal) is generated.However, at this time, the gas phase conditions are
O, kltO, /it When the suitable acid generation conditions are deviated and the component residue in the gas phase comes into contact with the substrate surface, the substrate surface will be corroded and the film formed on it will have poor surface flatness. It becomes a cloudy film. Before the formation of Mg0-AAi2(J), the 8i substrate is oxidized to form amorphous silicon dioxide Sin.
, Mg0-IU, 0. The film becomes a polycrystalline film instead of a single crystal film.
本実施例において、本発明による試料台２２を用いてＭ
ｇ０−ＡＩ、 Ｏ８の最適成長条件までの条件到達期間
にガス導入口２３よりＮ、ガスを流してシリコン基板２
４を保護し、最適成長条件になったあとで、保護用のＮ
２ガスを止めて蓋２５を開いて成長を開始した。その結
果、成長温度９８００Ｇで、面方位（１００）シリコン
単結晶上に鏡面の表面平坦性のよいＭｇＯ、Ａｌ、 ０
３膜を成長することができ、Ｘ線回折法によって単結晶
膜であることを確認した。なお保護用のガスはＮ２ガス
に限定されることはなく他種のガスも場合によっては使
用可能である。In this example, using the sample stage 22 according to the present invention, M
During the period when the optimum growth conditions for g0-AI and O8 are reached, N gas is flowed through the gas inlet 23 to form the silicon substrate 2.
4 and after reaching the optimal growth conditions, add protective N.
2 gas was stopped, the lid 25 was opened, and growth was started. As a result, at a growth temperature of 9800G, MgO, Al, 0 with good mirror surface flatness were grown on (100) silicon single crystal.
Three films could be grown, and it was confirmed by X-ray diffraction that they were single crystal films. Note that the protective gas is not limited to N2 gas, and other types of gas may be used depending on the case.
しかし、本発明の試料台の代りに、第１図（ａ）で示し
たような蓋を被せるだけの従来方法の試料台を用いた場
合には成長開始前にシリコン表面が腐食されたうえに、
５ｉＯ７層が形成されてしまい、Ｍｇ０ＪＶ、０．膜は
白濁した多結晶膜になってしまった。However, if a conventional sample stage with a lid such as that shown in FIG. 1(a) is used instead of the sample stage of the present invention, the silicon surface is corroded before the growth starts. ,
5iO7 layer is formed, Mg0JV, 0.5iO7 layer is formed. The film became a cloudy polycrystalline film.
本発明は上記実施例のみに限定されるものでなく、各種
薄膜形成を気相法において生成する場合において適用で
きることは明らかでありきわめて汎用性のある気相成長
用試料台でありその工業的価値は大きい。It is clear that the present invention is not limited to the above embodiments, but can be applied to various thin film formations using the vapor phase method, and is an extremely versatile sample stage for vapor phase growth, and its industrial value. is big.
第１図は気相成長において従来方法の試料台を用いた場
合の概略断面図、第２図は本発明に係る気相成長用試料
台の概略断２面図、第３図は本発明による試料台を用い
てシリコン単結晶基板上にマグネシアスピネルをエピタ
キシャル成長した本実施例の概略の説明図である。FIG. 1 is a schematic cross-sectional view of a conventional sample stage used in vapor phase growth, FIG. 2 is a schematic cross-sectional view of a sample stage for vapor phase growth according to the present invention, and FIG. 3 is a schematic cross-sectional view of a sample stage according to the present invention. FIG. 2 is a schematic explanatory diagram of this example in which magnesia spinel was epitaxially grown on a silicon single crystal substrate using a sample stage.
Claims (1)
う蓋とからなる試料台で、該蓋と該基板台の基板搭載面
のつくる空間に任意のガスを該試料台め外部空間を流れ
るガスとは独立に流すことができる構造であることを特
徴とする気相成長用試料台 ２、基板台が中空で側面にガス導入［：１、基板搭載面
にガスの通気穴が備えられており、該ガス導入口から該
中空部分に導入されたガスが該通気穴を通って基板搭載
面と蓋とのつくる空間を流れる構造であることを特徴と
する特許請求の範囲第一／項記載の気相成長用試料台 ３、基板台の基板搭載面が勾配を有していることを特徴
とする特許請求の範囲第１項記載の気相成長用試料台[Claims] 1. A sample stage consisting of a substrate stage on which a substrate is mounted and a lid that covers the substrate mounting surface of the substrate stage, and a space formed by the lid and the substrate mounting surface of the substrate stage is filled with any gas. Sample stand 2 for vapor phase growth characterized by having a structure that allows gas to flow through the sample stand independently of the gas flowing in the external space, the substrate stand is hollow and gas is introduced into the side [:1, substrate mounting surface] is provided with a gas ventilation hole, and the gas introduced from the gas introduction port into the hollow portion flows through the ventilation hole into the space created by the board mounting surface and the lid. The sample stand 3 for vapor phase growth according to claim 1/claim 1, wherein the substrate mounting surface of the substrate stand has a slope, the sample for vapor phase growth according to claim 1 stand
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13605282A JPS5927531A (en) | 1982-08-04 | 1982-08-04 | Sample board for vapor growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13605282A JPS5927531A (en) | 1982-08-04 | 1982-08-04 | Sample board for vapor growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5927531A true JPS5927531A (en) | 1984-02-14 |
Family
ID=15166049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13605282A Pending JPS5927531A (en) | 1982-08-04 | 1982-08-04 | Sample board for vapor growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5927531A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62117408A (en) * | 1985-11-18 | 1987-05-28 | Casio Comput Co Ltd | Auto-tuning device |
| WO2005106072A3 (en) * | 2004-04-27 | 2006-06-01 | Ardenne Anlagentech Gmbh | Thermal vacuum deposition method and device |
-
1982
- 1982-08-04 JP JP13605282A patent/JPS5927531A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62117408A (en) * | 1985-11-18 | 1987-05-28 | Casio Comput Co Ltd | Auto-tuning device |
| WO2005106072A3 (en) * | 2004-04-27 | 2006-06-01 | Ardenne Anlagentech Gmbh | Thermal vacuum deposition method and device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4661176A (en) | Process for improving the quality of epitaxial silicon films grown on insulating substrates utilizing oxygen ion conductor substrates | |
| US7220314B2 (en) | Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device | |
| JPS6364993A (en) | Method for growing elemental semiconductor single crystal thin film | |
| Ehrentraut et al. | Reviewing recent developments in the acid ammonothermal crystal growth of gallium nitride | |
| Sochacki et al. | Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds | |
| Paszkowicz et al. | Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium | |
| US7338555B2 (en) | Highly crystalline aluminum nitride multi-layered substrate and production process thereof | |
| JPS5927531A (en) | Sample board for vapor growth | |
| Siche et al. | Growth of bulk gan from gas phase | |
| JP2007153634A (en) | Aluminum nitride single crystal laminated substrate and method of manufacturing aluminum nitride single crystal laminated substrate | |
| JPH033233A (en) | Growth method for compound semiconductor single crystal thin film | |
| Faulkner et al. | Gallium nitride formed by vapour deposition and by conversion from gallium arsenide | |
| Takekawa et al. | Growth temperatures and the excess chlorine effect of N-polar GaN growth via tri-halide vapor phase epitaxy | |
| US20110212013A1 (en) | Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group-iii nitride crystals | |
| Lampe-Önnerud et al. | Chemical vapour deposition of copper on Si (111) and SiO2 substrates | |
| JPH0689874A (en) | Manufacture of semiconductor device | |
| JPH11246299A (en) | Formation of diamond film | |
| Ishii et al. | Growth of single crystals of aluminum nitride | |
| JPS5924760B2 (en) | Vapor phase growth method of magnesia spinel | |
| JP2007039271A (en) | Hydride vapor growth system, method for producing group iii nitride semiconductor substrate and group iii nitride semiconductor substrate | |
| JPS609143A (en) | Vapor growth method for insulating material | |
| JPS60210837A (en) | Crystal substrate for semiconductor device | |
| JPS5919917B2 (en) | epitaxial epitaxy | |
| JPS62281417A (en) | Vapor phase growth device | |
| JP2706967B2 (en) | Method of forming single crystal magnesia spinel film |