JPS5925269A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5925269A
JPS5925269A JP57135302A JP13530282A JPS5925269A JP S5925269 A JPS5925269 A JP S5925269A JP 57135302 A JP57135302 A JP 57135302A JP 13530282 A JP13530282 A JP 13530282A JP S5925269 A JPS5925269 A JP S5925269A
Authority
JP
Japan
Prior art keywords
output
circuit
mos transistor
differential amplifier
outputs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57135302A
Other languages
Japanese (ja)
Inventor
Yuji Nishimura
雄二 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57135302A priority Critical patent/JPS5925269A/en
Publication of JPS5925269A publication Critical patent/JPS5925269A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To eliminate the variation of output due to temperature drift by a method wherein the outputs of the first and second output circuits, with the input of charges generated by photo reception or those transferred in light shielding state, are inputted to a differential amplifier. CONSTITUTION:The photo input is transferred as the amount of charges to an MOS transistor 3' under the control by a timing generation circuit 1' through a photo reception and transfer circuit 2'. Further, it is converted into voltage and held to sample in the first output circuit consisting of MOS transistors 3', 5' and a resistor 4', and supplied to the gate of an MOS transistor 6' at the output stage. Besides, the output of a dummy transfer part 20 wherein light is shielded is connected to the gate of an MOS transistor 10 likewise through the second output circuit. Then, the outputs from the first and second output circuits are inputted to the differential amplifier 19 respectively via resistors 15-19, and accordingly an output 8' can be obtained.

Description

【発明の詳細な説明】 本発明は電荷転送装置に関し、とくにその出刃段の回路
(・湾成に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a charge transfer device, and more particularly to a circuit at a cutting stage thereof.

CCDイメージセンサ−等の固体撮像素子は、光の強さ
を電圧耽に変換する素子であり、ファクシミリなどに原
稿読取り素子として幅広く1吏用されている。
Solid-state imaging devices such as CCD image sensors are devices that convert the intensity of light into voltage, and are widely used as document reading devices in facsimiles and the like.

第11¥1は、従来のCODセンザーの回路図である。No. 11\1 is a circuit diagram of a conventional COD sensor.

光入力は、受光および転送回路2を経て、タイミング発
生回路1の制御の下にMOSトランジスタ3に電荷量と
して転送される。MOSトランジスタ3及び抵抗4によ
って電圧変換がおこなわれ、次段のMOSトランジスタ
5でサンプルホールドされて出力段のMOS)ランジス
タロのゲートに供給される。第2図は、第1図の出力タ
イミング波形である。基準レベル(1)Cレベル)は、
MOSトラ′ンジスタ6と抵抗7の抵抗分割で決まる。
The light input passes through the light receiving and transferring circuit 2 and is transferred as an amount of charge to the MOS transistor 3 under the control of the timing generating circuit 1. The voltage is converted by the MOS transistor 3 and the resistor 4, sampled and held by the next stage MOS transistor 5, and supplied to the gate of the output stage MOS transistor. FIG. 2 shows the output timing waveform of FIG. 1. The standard level (1) C level) is
It is determined by the resistance division between the MOS transistor 6 and the resistor 7.

光信号の強弱はMOS )ランジスタロのゲート電圧の
変化として出力に送られる。しかし端子8から出力され
る信号が温度変化とともに変動するという事実が確めら
れた。これは基準レベル(JJCレベル)が温度変化に
対し数rTI Vドリフトすることに原因かあり、MO
S)ランジスタロと抵抗7のオン抵抗の温度係数が異な
ることに起因していると考えられる。しかもこの数mv
の変動は、CCDセンザーの暗時出力が5mv程度ある
いはそれより低くなることを考えると無視できない値で
ある。
The strength of the optical signal is sent to the output as a change in the gate voltage of the MOS transistor. However, it has been established that the signal output from terminal 8 fluctuates with temperature changes. This may be due to the fact that the reference level (JJC level) drifts by several rTIV due to temperature changes, and the MO
S) This is thought to be due to the difference in the temperature coefficients of the on-resistances of Ranjistaro and resistor 7. Moreover, this number mv
This fluctuation is a value that cannot be ignored considering that the dark output of the CCD sensor is about 5 mV or lower.

このように従来のCCDセンサーは出方段の回路におい
てI) Cレベルの温度ドリフトが生じ、それによって
無視できない出力変動が起きるという欠点があった。
As described above, the conventional CCD sensor has the drawback that a temperature drift of the I)C level occurs in the output stage circuit, which causes a non-negligible output fluctuation.

本発明の目的は、温度ドリフトによる出方変動分なくし
た電荷転送装置を提供することにある。
An object of the present invention is to provide a charge transfer device that eliminates variations in output due to temperature drift.

本発明の電荷転送装置は受光によって生成された電荷を
入力する第1の出力回路と並列に、光遮断状態にて転送
される電荷を入力とする第2の出力回路を設け、両出力
回路の出力を差動増巾器に入力して、この差動増巾器か
ら出力信号を得るようにしたことを特徴とする。
The charge transfer device of the present invention includes a second output circuit that receives charges transferred in a light-blocking state in parallel with a first output circuit that receives charges generated by light reception, and connects both output circuits. The present invention is characterized in that the output is input to a differential amplifier, and an output signal is obtained from the differential amplifier.

以下、第3.4図を用いて本発明の一実施例全説明する
Hereinafter, one embodiment of the present invention will be fully explained using FIG. 3.4.

第3図は本発明の一実施例の回路図である。1′〜7′
及び9′は従来回路の1〜7及び9と同一であるので詳
細な説明は省略する。20は光−t j:、jp断した
ダミーの転送部でありこれは第2の出力回路ヲi′&成
するMOS)ランジスタ10のゲートに接/ト児される
。10〜14は3′〜7′ と同一回路である。3′〜
7′で作られる第1の出力回路からの実際の出力とダミ
ーの出力とは、夫々抵抗15〜19を介して差動増幅器
19に入力される。そしてこの差動増幅器の出力端が出
力端子8′に接続される。
FIG. 3 is a circuit diagram of one embodiment of the present invention. 1'~7'
and 9' are the same as 1 to 7 and 9 of the conventional circuit, so a detailed explanation will be omitted. Reference numeral 20 denotes a dummy transfer section in which the light is cut off, and this is connected to the gate of the MOS transistor 10 forming the second output circuit. 10-14 are the same circuits as 3'-7'. 3'~
The actual output and dummy output from the first output circuit 7' are input to the differential amplifier 19 via resistors 15 to 19, respectively. The output end of this differential amplifier is connected to the output terminal 8'.

このような構成にすることによって、M(JS)ランジ
スタロ′及び抵抗7′によって発生する温度ドリフトは
〜t、 (J S )ランジスタ13及び抵抗14によ
って発生する温度ドリフトによりキャンセルされる。即
ち、同一形状で構成された2つの出力段は、その温度ド
リフトは同一であるから差動増幅器から得られる出力は
温度変動のない出力信号となる。なお、基準レベル(D
Cレベル)ソノモのの値が変わることは、外部後続には
何等問題を与えない。
With this configuration, the temperature drift caused by the M(JS) transistor 13 and the resistor 7' is canceled by the temperature drift caused by the (J S ) transistor 13 and the resistor 14. That is, since the two output stages configured in the same shape have the same temperature drift, the output obtained from the differential amplifier becomes an output signal without temperature fluctuation. In addition, the reference level (D
C level) Changing the value of Sonomo does not pose any problem to external successors.

以上説明したように、CCDセンサーの出力の温度補償
全可能としているので、温度変化に依存しない正確な出
力電圧を得ることができる利点がある。よってファクシ
ミリにおいては、温度変化のある環境で1吏用しても鮮
明な画像を得ることが可(止である。
As explained above, since the output of the CCD sensor can be fully compensated for the temperature, there is an advantage that an accurate output voltage that does not depend on temperature changes can be obtained. Therefore, in a facsimile, it is possible to obtain a clear image even after one use in an environment where the temperature changes.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、従来のCCDセンサーの回路図、第2図は第
1図のタイミング波形図、第31)1は本発明の一実施
例の回路図、第4図は第31図のタイミング波形図であ
る。 1・・・・・タイミング発生回路、1′・・・ タイミ
ング発生回路、2・・・・受光、転送回路、2′ ・・
・受光、転送回路、3・・・・MOS)ランジスタ、3
′・・・・MOS)ランジスタ、4・・・・・抵抗、4
′  ・抵抗、5 、=−M OS )ランジスタ、5
′・・・[\I(JSトランジスタ、6・・・・・Mi
s)ランジスタ、6′・・M(JSI−ランジスタ、7
・・・・抵抗、7′ ・・抵抗、8・・・・出力、8′
・・・・・出力、9・・・ M(JS)ランジスタ5の
ゲート電圧波形、10   MUSトランジスタ、11
・・・抵抗、12 ・・・M(JS)ランジスタ、13
・・・・・MOS)ランジスタ、14・・抵抗、15 
・・・抵抗、16・・・抵抗、17・・・抵抗、18 
 抵抗、19・・・・差動増巾器、20・・・ ダミー
センサー、転送回路。 タイSンクイ言貿9) 第3図
Figure 1 is a circuit diagram of a conventional CCD sensor, Figure 2 is a timing waveform diagram of Figure 1, Figure 31) 1 is a circuit diagram of an embodiment of the present invention, and Figure 4 is a timing waveform diagram of Figure 31. It is a diagram. 1... Timing generation circuit, 1'... Timing generation circuit, 2... Light reception, transfer circuit, 2'...
・Light receiving, transfer circuit, 3...MOS) transistor, 3
'...MOS) transistor, 4...resistor, 4
' ・Resistance, 5, =-MOS) transistor, 5
′...[\I(JS transistor, 6...Mi
s) Ransistor, 6'...M (JSI-Ransistor, 7
...Resistance, 7' ...Resistance, 8...Output, 8'
...Output, 9... Gate voltage waveform of M (JS) transistor 5, 10 MUS transistor, 11
...Resistor, 12 ...M (JS) transistor, 13
...MOS) transistor, 14...resistance, 15
...Resistance, 16...Resistance, 17...Resistance, 18
Resistor, 19... Differential amplifier, 20... Dummy sensor, transfer circuit. Figure 3

Claims (1)

【特許請求の範囲】[Claims] 受光により生成された電荷を入力する第1の出力回路と
、光遮断状態における電荷を入力とする第2の出力回路
の各出力を差動増幅器で比較して出力するようにしたこ
とを特徴とする電荷転送装置。
A differential amplifier compares and outputs the outputs of a first output circuit that inputs charges generated by light reception and a second output circuit that inputs charges in a light-blocking state. charge transfer device.
JP57135302A 1982-08-03 1982-08-03 Charge transfer device Pending JPS5925269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57135302A JPS5925269A (en) 1982-08-03 1982-08-03 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57135302A JPS5925269A (en) 1982-08-03 1982-08-03 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS5925269A true JPS5925269A (en) 1984-02-09

Family

ID=15148528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57135302A Pending JPS5925269A (en) 1982-08-03 1982-08-03 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS5925269A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0341669A2 (en) * 1988-05-10 1989-11-15 Victor Company Of Japan, Limited Apparatus for detecting distribution of electric surface potential
US5260796A (en) * 1988-05-10 1993-11-09 Victor Company Of Japan, Ltd. Apparatus detecting distribution of surface potential on a medium holding charge latent image
US5268763A (en) * 1988-05-10 1993-12-07 Victor Company Of Japan, Ltd. Apparatus for recording a charge latent image on a medium and for producing color signals from the charge latent image
JPH0660953U (en) * 1989-12-15 1994-08-23 ゴールド、スター、カンパニー、リミテッド Fixing structure of the internal magnetic field shield of the color picture tube

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0341669A2 (en) * 1988-05-10 1989-11-15 Victor Company Of Japan, Limited Apparatus for detecting distribution of electric surface potential
US5260796A (en) * 1988-05-10 1993-11-09 Victor Company Of Japan, Ltd. Apparatus detecting distribution of surface potential on a medium holding charge latent image
US5268763A (en) * 1988-05-10 1993-12-07 Victor Company Of Japan, Ltd. Apparatus for recording a charge latent image on a medium and for producing color signals from the charge latent image
JPH0660953U (en) * 1989-12-15 1994-08-23 ゴールド、スター、カンパニー、リミテッド Fixing structure of the internal magnetic field shield of the color picture tube

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