JPS59232288A - High speed silver plating liquid - Google Patents

High speed silver plating liquid

Info

Publication number
JPS59232288A
JPS59232288A JP10493783A JP10493783A JPS59232288A JP S59232288 A JPS59232288 A JP S59232288A JP 10493783 A JP10493783 A JP 10493783A JP 10493783 A JP10493783 A JP 10493783A JP S59232288 A JPS59232288 A JP S59232288A
Authority
JP
Japan
Prior art keywords
silver
plating solution
speed
plating
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10493783A
Other languages
Japanese (ja)
Other versions
JPH0124231B2 (en
Inventor
Riichi Okubo
利一 大久保
Yasuo Mori
康夫 森
Shunichi Kasai
笠井 俊一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP10493783A priority Critical patent/JPS59232288A/en
Priority to US06/617,215 priority patent/US4614568A/en
Priority to KR1019840003181A priority patent/KR890001106B1/en
Priority to GB08414641A priority patent/GB2141441B/en
Publication of JPS59232288A publication Critical patent/JPS59232288A/en
Publication of JPH0124231B2 publication Critical patent/JPH0124231B2/ja
Granted legal-status Critical Current

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Abstract

PURPOSE:To provide a titled plating liquid which prevents replacement deposition of silver and to form a silver plating film having good adhesion by adding a cyclic compd. contg. an adequate amt. of a thioureylene group in the ring to said liquid in order to electroplate silver on a metallic base plate baser than silver. CONSTITUTION:A cyclic compd. contg. the thioureylene group expressed by the constitutional formula (R1, R2 are hydrogen or alkyl group or aryl group) is added at the amt. enough to prevent the replacement deposition of silver to a silver plating liquid for the purpose of electroplating silver on a copper, copper alloy or copper plating base or a base material consisting of a metal baser than silver such as iron, iron alloy, nickel, nickel alloy or the like, by which the high speed silver plating liquid to prevent the replacement deposition of silver on the above-mentioned base material by immersion is obtd. A cyclic compd. contg. a thioureylene group and a 5-6-membered ring consisting of C or N such as 2-thiobarbituric acid, 2-imidazolidinethion,1-phenyl-2-tetrazoline-5- thion or the deriv. or the like thereof is adequately usable as the above-mentioned cyclic compd.

Description

【発明の詳細な説明】 本発明は、高速銀めっき液に関するものであり、特に、
銅、銅合金、鉄、鉄合金、ニッケル。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high-speed silver plating solution, and in particular,
Copper, copper alloys, iron, iron alloys, nickel.

ニッケル合金などの銀よりも卑な金属から成る基材を浸
漬しても、銀の置換析出が生じないよR,S   R。
Even if a base material made of a metal less base than silver, such as a nickel alloy, is immersed, no substitutional precipitation of silver will occur.

(I(、、R2は水素またはアルキル基寸たけアl)−
ル基) なるチオウレイレン基を環内に含む環状化合物を含有せ
しめた高速銀めつき治、に門するものである。
(I(,, R2 is hydrogen or alkyl group size Al)-
It is a high-speed silver plating process containing a cyclic compound containing a thioureylene group (2) in the ring.

最近では、電子部品材料に銀めっきを施すとき経済的観
点から、高速度めっき法が広く採用されている。この方
法は、銀のめつき速度を大きくするため、めっき液を高
温圧シ2.めっき液中の銀ご1度を高め、めっき液の流
速を大きくして行なわれる。この方法に用いらノ1.る
高速銀めっき液は、フリーのシアン化物のt”= D¥
’−を十分低く保たれねば力らない。これは、フリーの
シアン化物の濃度が高いとこのフリーのシアン化物が高
温で激しく分解し、多量のシアンガスが発生して危険と
なふためである。そこで、高速銀めっき液には、銀塩を
シアン化銀アルカリの形で導入し、さらに電解時に陰極
から生成するフリーのシアン化物を徐々に分解させて除
去し、蓄積せしめないようにするため、液のpHfニア
、5〜90程度に保つだめのpH緩衝系を形成すること
が特徴である。
Recently, high-speed plating methods have been widely adopted from an economic standpoint when silver plating electronic component materials. In this method, in order to increase the silver plating speed, the plating solution is heated under high temperature pressure. This is done by increasing the silver content in the plating solution and increasing the flow rate of the plating solution. No. 1 used in this method. The high-speed silver plating solution has free cyanide t” = D¥
It won't work unless '- is kept sufficiently low. This is because when the concentration of free cyanide is high, the free cyanide decomposes violently at high temperatures and generates a large amount of cyanide gas, which is dangerous. Therefore, silver salt is introduced into the high-speed silver plating solution in the form of alkali silver cyanide, and in order to gradually decompose and remove free cyanide generated from the cathode during electrolysis and prevent it from accumulating. It is characterized by the formation of a pH buffer system that maintains the pH of the liquid at about 5 to 90.

また、現在では、高価格である銀をさらに有効に利用す
るため高速で、めっき必要部分のみにめっきを行う高速
部分めっき法が行われているO この高速部分めっき法は、めっき不要部分にマスクを施
し、被めっき部分に銀めっき液をポンプによp高速で噴
出させ、被めっき基材と不溶性陽極の間に電流を流すこ
とにより、めっきを施すというジェットめっき法が主体
である。
Additionally, in order to make more effective use of silver, which is expensive, a high-speed selective plating method is currently being used in which only the areas that require plating are plated at high speed. The main jet plating method is to apply plating by spraying a silver plating solution onto the part to be plated using a pump at high speed and passing an electric current between the substrate to be plated and an insoluble anode.

このような高速度部分銀めつきにおいての従来の最大の
問題点は、銀めっきを施したい銀よシ卑なる金属基材上
に、銀めっき液に浸漬しただけで銀が置換析出してしま
うことである。この銀の置換析出は全屈基材として、銅
、銅合金。
The biggest problem with conventional high-speed selective silver plating is that silver is precipitated by displacement just by immersing it in a silver plating solution on the base metal base material other than silver. That's true. This substitutional precipitation of silver is performed on copper and copper alloys as a total bending substrate.

鉄、鉄合金、ニッケル合金を用いた時に顕著である。こ
の置換析出した銀は1通常基材との密着性が悪く、この
上に電解で銀めっきを施した場合、めっき皮膜のはがれ
や加熱時にふくれや変色が生じ、めっき不良の原因とな
る。このめっき不良は、電子部品の銀めっきに門しては
特に致命的である。また、これのみ力らず1部分めっき
の場合はめつき不要部分にも析出することになるため、
高価格の銀が損失されてしまう。
This is noticeable when iron, iron alloys, and nickel alloys are used. This displacement-precipitated silver usually has poor adhesion to the base material, and when silver plating is applied electrolytically on it, the plating film peels off and blisters or discolors when heated, resulting in poor plating. This plating defect is especially fatal when it comes to silver plating of electronic parts. In addition, if one part is plated without applying this force, deposits will also be deposited on areas where plating is not required.
High price silver will be lost.

従来のめつき方法では、このような密着性の悪い銀の置
換析出を防ぐためには、銀濃度の低いめっき液から、ス
トライクめっきとよばれる薄い銀めっきを施し、その後
9通常のめっきをその上へ施している。しかし1部分め
っきに関してはストライクめっきを行うことは、めっき
の密着性を向上させることはできるが、めっき不要部分
にもストライクめっきを行わねばならないため銀の損失
となる。とのような高速部分めっきにおける銀の置換析
出を防止する目的で。
In conventional plating methods, in order to prevent such substitutional precipitation of silver with poor adhesion, a thin silver plating called strike plating is applied using a plating solution with a low silver concentration, and then regular plating is applied on top. It is given to However, in the case of single-part plating, strike plating can improve the adhesion of the plating, but it results in a loss of silver because strike plating must also be performed on areas where no plating is required. For the purpose of preventing silver displacement precipitation during high-speed partial plating such as.

メルカプト化合物を含有せしめた銀めっき液も提案され
ている。(特開昭55−34699号)しかし、ことで
推奨されているチオ乳酸やチオリンゴ酸は悪臭を有する
うえに、@イオンの存在下では、銀の置換析出を防止す
る効果が消失し易いという欠点を有している。
Silver plating solutions containing mercapto compounds have also been proposed. (Japanese Patent Application Laid-Open No. 55-34699) However, the particularly recommended thiolactic acid and thiomalic acid have a bad odor and also have the drawback that their effect of preventing silver substitutional precipitation is easily lost in the presence of @ ions. have.

従って1例えば、銅基材上へ銀めっきを行う場合に、銀
の置換析出が少しずつおこって銅イオンが液中に蓄積し
た7す、また外部から銅イオンが混入するなど罠より、
液中の銅イオンの濃度が高まると、この後は、同じメル
カプタン化合物を添加して置換析出を防止しようとして
も置換析出を防止する効果はすぐ消失してしまう。
Therefore, for example, when silver plating is performed on a copper substrate, copper ions accumulate in the solution due to silver substitutional precipitation7, or copper ions are mixed in from the outside.
When the concentration of copper ions in the liquid increases, even if the same mercaptan compound is added to prevent displacement precipitation, the effect of preventing displacement precipitation immediately disappears.

このことは、液の管理を困硅にするものである。This makes liquid management difficult.

壕だ、他にも、銀の置換析出を防止する目的で、「環状
核に直接結合したメルカプト基を有する芳香族または棲
素環化合物を含む銀めっき液」(特開昭57−4599
5号)や「ジチオカルバミン酸もしくはその塩および/
又はチオセミカルバジッドもしくはその塩を添加して成
る銀めっき液(特開昭57−131382号)も提案さ
れている。しかし、これらで提案されている化合物は、
7り−のシアン化物の濃度が高い銀めっき液中に添加す
れば銀より卑な全屈の浸漬による銀の置換析出を防止す
ることができるが、高速度めっきで用いられるフリーの
シアン化物が十分低くなっている銀めっき液中では沈殿
物を生じせしめ、置換析出を防止する効果は有しない。
In addition, for the purpose of preventing substitutional precipitation of silver, "silver plating solution containing an aromatic or aerocyclic compound having a mercapto group directly bonded to a cyclic nucleus" (Japanese Patent Application Laid-Open No. 57-4599
No. 5) and “dithiocarbamic acid or its salt and/or
Alternatively, a silver plating solution containing thiosemicarbazide or a salt thereof (Japanese Patent Application Laid-open No. 131382/1982) has also been proposed. However, these proposed compounds are
By adding cyanide to a silver plating solution with a high concentration, it is possible to prevent the displacement precipitation of silver due to total immersion, which is less noble than silver, but free cyanide used in high-speed plating is In a silver plating solution at a sufficiently low temperature, a precipitate is formed and there is no effect of preventing displacement precipitation.

以上のように、現在までの既存技術では高速度部分めっ
きにおいて、銀の置換析出を防止して密着性の良好な銀
めっき皮膜を得、銀の損失を防ぐことは必ずしも十分で
はないのである。
As described above, in high-speed partial plating, the existing technology to date is not necessarily sufficient to prevent silver displacement precipitation, obtain a silver plating film with good adhesion, and prevent silver loss.

本発明は、上述のような既存技術の欠点を解決するため
に。
The present invention aims to solve the drawbacks of existing technologies as mentioned above.

(R,、R2は水素またはアルキル某咬たけ了り−ル基
) なるチオウレイレン基を環内に含む環状化合物を用い、
フリーのシアン化物濃度が十分低い高速銀めっき液にお
いて銀の置換析出を防止し。
(R,, R2 is hydrogen or an alkyl group) Using a cyclic compound containing a thioureylene group in the ring,
Prevents silver displacement precipitation in high-speed silver plating solutions with sufficiently low free cyanide concentrations.

銀ストライクめっきなしで該基材上へ密着性の良好な銀
めっきを施すことを目的としたものである。この RlS  R。
The purpose of this method is to perform silver plating with good adhesion on the substrate without silver strike plating. This RlS R.

(R□、R2は水素またはアルキル基またはアリール基
) なるチオウレイレン基を環内に含む環状化合物の銀の置
換析出を防止する効果はきわめて高く。
(R□, R2 are hydrogen, an alkyl group, or an aryl group) A cyclic compound containing a thioureylene group in the ring is extremely effective in preventing substitutional precipitation of silver.

しかも、悪臭を有さす、 Ouイオンの存在下において
も効果を消失しにくい。また、フリーのシアン化物濃度
が十分低い高速銀めっき液中に添加しても沈殿を生じな
い。
Furthermore, the effect is unlikely to disappear even in the presence of Ou ions, which have a bad odor. Furthermore, no precipitation occurs even when added to a high-speed silver plating solution where the free cyanide concentration is sufficiently low.

これらの化合物は1通常のフリーのシアン化物濃度が十
分低い高速度銀めっき液に、005f/L含有せしめれ
ば完全に置換析出を防止することができ2条件によって
は0.02 f/Lでも十分な効果が得られる。
These compounds can completely prevent substitutional precipitation by (1) adding 0.05 f/L to a high-speed silver plating solution with a sufficiently low free cyanide concentration; and (2) depending on the conditions, even 0.02 f/L can be used. A sufficient effect can be obtained.

本発明に用いられる R、  S  馬 (R8,馬は水素またはアルギル基′!!:たけアリー
ル基) なるチオウレイレン基を環内圧含む環状化合物は、チオ
ン基の両側にN原子が付いていること。
The cyclic compound containing a thioureylene group such as R, S (R8, argyl group'!!: aryl group) used in the present invention has N atoms attached to both sides of the thione group.

さらに環状となっていることで、高速めつきを行う場合
の高温、高流速、高電流密度という厳しい条件下でも分
解されに<〈、安定化されている。これに対し。
Furthermore, the annular shape makes it stable and resistant to decomposition even under the harsh conditions of high temperature, high flow rate, and high current density during high-speed plating. Against this.

(R,、R2は水素またはアルキル基またはアリール基
) なるチオウレイレン基を有していても環状でない化合物
や、環状であってもチオン基の両側共にN原子が付いて
いない化合物では、高速めっきが行われる条件下では分
解し易い。このようウレイレン基を含む環状化合物で、
しかも環が5員環まだFi6員環であり、そして、環の
他の構成原子がCまたはNである化合物が特に安定であ
る。
(R, , R2 are hydrogen, alkyl groups, or aryl groups) Compounds that are not cyclic even if they have a thioureylene group, or compounds that are cyclic but do not have N atoms on both sides of the thione group cannot be plated at high speed. It is easy to decompose under the conditions in which it is carried out. Such a cyclic compound containing a ureylene group,
In addition, compounds in which the ring is a 5-membered ring and a 6-membered Fi ring, and other constituent atoms of the ring are C or N, are particularly stable.

本発明に用いられる RlS  R2 (R□、R2は水素またはアルキル基またはアリール基
) なるチオウレイレン基を環内に含む環状化合物としては
、2−チオバルビッル酸、2−イミダゾリジンチオン、
1−フェニル−2−テトラゾリン−5−チオンまたはこ
れらの誘導体が誉げられる。これら環状化合物の添加量
は、銀の置換析出を防止するのに必要かつ十分な量添加
すれば良いが、一般に浴に対し10〜300 q//!
、の添加量が好適である。
Examples of the cyclic compound containing a thioureylene group in the ring RlS R2 (R□, R2 is hydrogen, an alkyl group, or an aryl group) used in the present invention include 2-thiobarbic acid, 2-imidazolidinethione,
Preferred are 1-phenyl-2-tetrazoline-5-thione or derivatives thereof. These cyclic compounds may be added in an amount necessary and sufficient to prevent substitutional precipitation of silver, but generally 10 to 300 q//!
The amount of addition is suitable.

本発明の高速銀めっき液は、銀塩としてシアン化銀アル
カリを含有する。シアン化銀アルカリとしては、シアン
化銀ナトリウムも用い得るが、一般にシアン化銀カリウ
ムが最良である。
The high-speed silver plating solution of the present invention contains alkali silver cyanide as a silver salt. Although sodium silver cyanide can also be used as the alkali silver cyanide, potassium silver cyanide is generally best.

また、液のpH緩衝性と、電気伝導性を伺与すゐためリ
ン酸、ピロリン酸、クエン酸のアルカリ金属塩を含有す
る。また、ホウ酸などのpH緩衝塩をさらに加えてもよ
い。
It also contains alkali metal salts of phosphoric acid, pyrophosphoric acid, and citric acid to impart pH buffering properties and electrical conductivity to the solution. Additionally, a pH buffering salt such as boric acid may be further added.

本発明の高速銀めっき液は通常の装置を用い。The high-speed silver plating solution of the present invention is produced using conventional equipment.

通常の高速めつきを行うときの条件で使用され得る。例
えば、銀塩の濃度は、銀として50〜80 f/l 、
液温は40〜80℃、電流密度は20〜200 A/d
i、 pHは7.5〜9.0の間で使用され得る。この
よう々条件で適当な流速で高速めつきを行うと、得られ
る銀めっき皮膜は密着性がよく、均一、平滑で、硬度も
低く、電子部品用の銀めっきとしては最適のものである
。ただ、光沢は低いが、もし、光沢の高いめっき皮膜を
得たい場合は、セレン化合物を添加すればよい。また使
用者の目的に応じてアンチモン化合物、  EDTA、
その他の界面活性剤など当業者の性質 に公知の成分を添加し、めっき皮膜やめっき条件を改め
ることを拒むものではない。
It can be used under normal high-speed plating conditions. For example, the concentration of silver salt is 50 to 80 f/l as silver,
Liquid temperature is 40-80℃, current density is 20-200 A/d
i, pH can be used between 7.5 and 9.0. When high-speed plating is carried out at an appropriate flow rate under these conditions, the resulting silver plating film has good adhesion, is uniform, smooth, and has low hardness, making it ideal for silver plating for electronic components. However, the gloss is low, but if you want to obtain a high gloss plating film, you can add a selenium compound. Depending on the purpose of the user, antimony compounds, EDTA,
It is possible to add other ingredients known to those skilled in the art, such as surfactants, to modify the plating film and plating conditions.

以上のように1本発明の高速銀めっき液は。As described above, the high speed silver plating solution of the present invention is as follows.

銅、銅合金、鉄、鉄合金、ニッケル、ニッケル合金など
の銀よりも卑な金属基材に対して高速めつきを施すとき
に、@の置換析出を防止するため、めっき皮膜の密着性
が高められ、銀の排失を々〈すことができる。しかも、
銅イオンなどの不純物によυこの効果が失われず、きわ
めて液の管理が容易であり、消耗成分を随時補充し、定
期的に活性炭濾過を行えば半恒久的な使用が可能である
When performing high-speed plating on metal substrates baser than silver such as copper, copper alloys, iron, iron alloys, nickel, and nickel alloys, the adhesion of the plating film is It can be increased and the elimination of silver can be reduced. Moreover,
This effect is not lost due to impurities such as copper ions, and it is extremely easy to manage the liquid.Semi-permanent use is possible if consumable components are replenished as needed and activated carbon filtration is performed periodically.

以下に本発明の実施例について説明する。Examples of the present invention will be described below.

実施例1 次の組成の高速銀めっき液を作製した。Example 1 A high-speed silver plating solution with the following composition was prepared.

これをpHa3に調整し1通常の方法でアルカリ脱脂、
酸洗を施したリン青銅板を浸漬したところ、リン青銅板
上への銀の置換析出は全く生じなかった。さらにこの液
を用い同じ処理を施したリン青銅板にジェットめっき法
で高速部分めっきを行った。電流密度は100 A/d
rr?  液温は65℃とした。得られた銀めっき皮膜
は均一、平滑で硬度も低いものであった。密着性は良好
であり、これを350℃で2分間加熱したところ、ふく
れなどの外観変化は生じなかった。
Adjust this to pH 3 and degrease with alkaline in the usual way.
When the pickled phosphor bronze plate was immersed, no substitutional precipitation of silver occurred on the phosphor bronze plate. Furthermore, using this solution, high-speed partial plating was performed using a jet plating method on a phosphor bronze plate that had been subjected to the same treatment. Current density is 100 A/d
rr? The liquid temperature was 65°C. The silver plating film obtained was uniform, smooth, and had low hardness. Adhesion was good, and when this was heated at 350° C. for 2 minutes, no change in appearance such as blistering occurred.

実施例2 実施例1の2−チオバルビッル酸のがわりに2−イミダ
ゾリジンチオンを30 WV′を添加し。
Example 2 In place of 2-thiobarbic acid in Example 1, 30 WV' of 2-imidazolidinethione was added.

同様の実験を行ったところ、はとんど同じ結果を得た。When we conducted a similar experiment, we obtained almost the same results.

実施例3 次の組成の高速銀めっき液を作製した。Example 3 A high-speed silver plating solution with the following composition was prepared.

この溶液をpHEL3に調整し1通常の方法でアルカリ
脱脂、酸洗を施したリン青銅板を浸漬したところ、リン
青銅板上への銀の置換析出は全く生じなかった。
When this solution was adjusted to pHEL 3 and a phosphor bronze plate that had been subjected to alkali degreasing and pickling in a conventional manner was immersed, no substitutional precipitation of silver occurred on the phosphor bronze plate.

次にこの組成の高速銀めっき液を用い、同じ前処理をし
たリン青銅板に100A/dtr?の電流密度で65℃
でジェットめっき法により高速部分めっきを行った。得
られた銀めっき皮膜は、均一、平滑で密着性は良好でお
り、これを350℃で2分間加熱してもふくれなどの外
観変化は生じなかった。
Next, using a high-speed silver plating solution with this composition, apply 100A/dtr to a phosphor bronze plate that has undergone the same pretreatment. 65℃ at a current density of
High-speed partial plating was performed using the jet plating method. The obtained silver plating film was uniform, smooth, and had good adhesion, and no change in appearance such as blistering occurred even when it was heated at 350° C. for 2 minutes.

ガお、実施例1〜3において、それぞれ2−チオバルビ
ッル酸、2−イミダゾリジンtオン21−フェニル−2
−テトラソリンーs −f;A−ンを含まない溶液で同
様の実験を行うと、いずれも密着性の悪い銀の置換析出
がおこった。
In Examples 1 to 3, 2-thiobarbic acid, 2-imidazolidine t-one, 21-phenyl-2,
When similar experiments were conducted using solutions not containing -tetrasoline-s-f;A-, displacement precipitation of silver with poor adhesion occurred in all cases.

比較実験結果1 次の組成の高速銀めっき液を作製した。Comparative experiment results 1 A high-speed silver plating solution with the following composition was prepared.

これをpHa3に調整し1表1の化合物をそれぞれ濃度
が100■/lとなるように添加し、ジェットめっき法
で高速部分めっきを行うこととした。
After adjusting the pH to 3, the compounds shown in Table 1 were added at a concentration of 100 .mu./l, and high-speed partial plating was carried out using the jet plating method.

表  1 借換析出防止効果の瀾の印は1次のことを示す。Table 1 The negative sign of the effect of preventing refinancing precipitation indicates the following.

o;銀の置換析出が全く生じず、リン′W@板の色の変
化が々い。
o: No substitutional precipitation of silver occurred, and the color of the phosphorus W@ plate changed significantly.

△;銀の置換析出が部分的におこり、リン青銅板が部分
的mに白色化する。
Δ: Substitutional precipitation of silver occurs partially, and the phosphor bronze plate becomes partially white.

X;銀の置換析出が全面でおこり、リン青銅板が完全に
白色化する。
X: Substitutional precipitation of silver occurs over the entire surface, and the phosphor bronze plate becomes completely white.

表1に示すように1本発明の添加剤である2−チオバル
ビッル酸、2−イミダゾリジンチオン、1−フェニル−
2−テトラゾリン−5−チオンは沈殿を生じしめなかっ
た。しかし、比較例として挙げたもののいくつかは沈殿
を生じた。
As shown in Table 1, additives of the present invention, such as 2-thiobarbic acid, 2-imidazolidinethione, and 1-phenyl-
2-tetrazoline-5-thione did not cause any precipitation. However, some of the comparative examples produced precipitation.

これらの高速銀めっき液に通常の方法でアルカリ脱脂、
酸洗を施したリン青銅板を30秒間浸漬したところ、各
添加剤による銀の置換析出の防止効果は表1に示すよう
になった。
These high-speed silver plating solutions are alkaline degreased in the usual way,
When a pickled phosphor bronze plate was immersed for 30 seconds, Table 1 shows the effectiveness of each additive in preventing silver displacement precipitation.

このような置換析出を生じしめる高速銀めっき液を用い
、前処理をしたリン青銅板に実施例1と同じ条件で高速
銀めっきを行うと、めっき不要部分に多量の銀が析出し
たのみならず、得られた銀めっき皮膜は、外観上むらが
大きく。
When high-speed silver plating was performed on a pretreated phosphor bronze plate under the same conditions as in Example 1 using a high-speed silver plating solution that causes such substitutional precipitation, not only a large amount of silver was deposited on areas where no plating was required. The silver plating film obtained had a large unevenness in appearance.

密着性が悪<、SSa℃で2分間加熱を行うと変色、ふ
くれを生じた。
Adhesion was poor, and discoloration and blistering occurred when heated at SSa°C for 2 minutes.

比較実験結果2 比較実験結果1と同じ組成の高速銀めっき液を作製し、
リン青銅板を浸漬して缶イオンを溶出させた。この液に
次の化合物 0チオ乳酸     Oチオリンゴ酸 02−チオバルビッル酸   02−イミダゾリジンチ
オン01−フェニル−2−テトラゾリン−5−チオンを
50)し′tずつ添加した。
Comparative Experiment Result 2 A high-speed silver plating solution with the same composition as Comparative Experiment Result 1 was prepared,
A phosphor bronze plate was immersed to elute the can ions. To this solution were added 50' of the following compounds: 0 thiolactic acid, 0 thiomalic acid, 0 2-thiobarbital acid, 0 2-imidazolidinethione, 01-phenyl-2-tetrazoline-5-thione.

この溶液を用い1通常の方法でアルカリ脱脂。Using this solution, perform alkaline degreasing in the usual manner.

酸洗を施したリン青銅板を浸漬すると全て置換析出は生
じなかった。さらに、これらの銀めっき液を用い、実施
例1と同様の条件で高速度部分めっきを行ったところ、
いずれも良好な銀めっき皮膜が得られた。
When the pickled phosphor bronze plate was immersed, no displacement precipitation occurred. Furthermore, when high-speed partial plating was performed using these silver plating solutions under the same conditions as in Example 1,
Good silver plating films were obtained in all cases.

この銀めっき液をこの後72時間放置した。This silver plating solution was then allowed to stand for 72 hours.

同じ様に前処理を施したリン青銅板を浸漬したところ、
チオ乳酸、チオリンゴ酸を添加した溶液では、@着性の
悪い欽の置換析出が生じた。
When a phosphor bronze plate that had been pretreated in the same way was immersed,
In the solution to which thiolactic acid and thiomalic acid were added, displacement precipitation of chlorine with poor adhesion occurred.

さらに高速度めっきを行うと、得られた側めつき皮膜は
密着性が悪く、外観上むらが多いものであった。
When high-speed plating was further performed, the resulting side-plated film had poor adhesion and was highly uneven in appearance.

一方1本発明の添加剤である2−チオバルビツル酸、2
−イミダゾリジンチオン、1−フェニル−2−テトラゾ
リン−5−チオンを添加した溶液では、72時間の放置
の後も前処理したリンM′釧板上への銭の箭換析出は完
全に防止されていた。高速めつきを行うと、得られた銀
めっき皮膜は以前と変わらず、良好々ものであった。ま
た、240時間以上の放置の後も同様の結果が得られた
On the other hand, 1 is the additive of the present invention, 2-thiobarbituric acid, 2
- In the solution containing imidazolidinethione and 1-phenyl-2-tetrazoline-5-thione, the precipitation of coins on the pretreated phosphorus M' plate was completely prevented even after standing for 72 hours. . When high-speed plating was performed, the silver plating film obtained was as good as before. Further, similar results were obtained after being left for 240 hours or more.

特許出願人 日本鉱業株式会社 代理人 弁理士(7569)並川啓志Patent applicant: Japan Mining Co., Ltd. Agent: Patent attorney (7569) Keishi Namikawa

Claims (1)

【特許請求の範囲】 (1)  銅、銅合金、銹めつき素地または鉄、鉄合金
、ニッケル、ニッケル合金などの銀より卑な全屈のいず
れかから成る基材上へ銀を電気めっきするための銀めっ
き液において。 RIS  R2 (R□l B、は水素またはアルキル基またはアリ?−
ル基) なるチオウレイレン基を環内に含む環状化合物を銀の置
換析出を防止するに十分な量添加し、浸漬による該基材
上への銀の置換析出を防止することを特徴とする高速銀
めっき液。 R,S  へ (R□、R2は水素またはアルキル基またはアリール基
) なるチオウレイレン基を環内に含む環状化合物は、環が
5員環または6員環であり、そして、環の他の構成原子
がCまたは)■である特許請求の範囲第1項に記載の高
速銀めっき液。 R,S  R。 (R1,R,は水素またはアルキル基またはアリール基
) なるチオウレイレン基を環内に含む環状化合物は、2−
チオバルビッル酸、2−イミダゾリジンチオン、1−フ
ェニル−2−テトラゾリン−5−チオンまたはこれらの
誘導体である特許請求の範囲第2項に記載の高速鋼めっ
き液。 (4)  高速銀めっき液は、銀塩としてシアン化6u
アルカリを含有し、かつ。 馬 S  R。 (R1,R2は水素またはアルキル基または了り−ル基
) なるチオウレイレン基を環内に含む環状化合物の存在下
で、浸漬による銀の債、換析出が防止できるように、フ
リーのシアン化物の量が十分低く方っている特許請求の
範囲第1項に記載の高速銀めっき液。 (5)  高速銀めっき液は、リン酸、ビロリン酸。 クエン酸のアルカリ金属塩の中から選ばれる塩を電気伝
導性及びpH緩衝性を付与するために含有し、 pHが
15〜90の範囲内に調整された特許請求の範囲第1項
に記載の高速銀めっき液。
[Claims] (1) Electroplating of silver onto a substrate made of copper, a copper alloy, a galvanized base material, or a base material less noble than silver such as iron, an iron alloy, nickel, or a nickel alloy. In silver plating solution for. RIS R2 (R□l B is hydrogen, an alkyl group, or an ali?-
A high-speed silver film characterized by adding a cyclic compound containing a thioureylene group in the ring in an amount sufficient to prevent silver displacement precipitation on the substrate by immersion. Plating solution. A cyclic compound containing a thioureylene group in the ring to R, S (R□, R2 is hydrogen, an alkyl group, or an aryl group) has a 5- or 6-membered ring, and other constituent atoms of the ring The high-speed silver plating solution according to claim 1, wherein is C or )■. R, S R. (R1, R, is hydrogen, an alkyl group, or an aryl group) A cyclic compound containing a thioureylene group in the ring is 2-
The high-speed steel plating solution according to claim 2, which is thiobarbic acid, 2-imidazolidinethione, 1-phenyl-2-tetrazoline-5-thione, or a derivative thereof. (4) The high-speed silver plating solution uses cyanide 6u as a silver salt.
Contains alkali and. Horse SR. (R1 and R2 are hydrogen, an alkyl group, or an alkyl group) In the presence of a cyclic compound containing a thioureylene group in the ring, free cyanide is removed to prevent silver bonding and precipitation due to immersion. The high-speed silver plating solution according to claim 1, wherein the amount is sufficiently low. (5) High-speed silver plating solution is phosphoric acid or birophosphoric acid. Claim 1, which contains a salt selected from alkali metal salts of citric acid to impart electrical conductivity and pH buffering properties, and whose pH is adjusted within the range of 15 to 90. High speed silver plating solution.
JP10493783A 1983-06-14 1983-06-14 High speed silver plating liquid Granted JPS59232288A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10493783A JPS59232288A (en) 1983-06-14 1983-06-14 High speed silver plating liquid
US06/617,215 US4614568A (en) 1983-06-14 1984-06-04 High-speed silver plating and baths therefor
KR1019840003181A KR890001106B1 (en) 1983-06-14 1984-06-07 High-speed silver plating
GB08414641A GB2141441B (en) 1983-06-14 1984-06-08 High-speed silver plating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10493783A JPS59232288A (en) 1983-06-14 1983-06-14 High speed silver plating liquid

Publications (2)

Publication Number Publication Date
JPS59232288A true JPS59232288A (en) 1984-12-27
JPH0124231B2 JPH0124231B2 (en) 1989-05-10

Family

ID=14394003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10493783A Granted JPS59232288A (en) 1983-06-14 1983-06-14 High speed silver plating liquid

Country Status (1)

Country Link
JP (1) JPS59232288A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6223996A (en) * 1985-07-23 1987-01-31 Nippon Mining Co Ltd Silver plating method
JPH05222569A (en) * 1984-01-26 1993-08-31 Shinko Electric Ind Co Ltd Silver plating solution
JP2013249514A (en) * 2012-05-31 2013-12-12 Nichia Corp Electrolytic silver plating solution for optical semiconductor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101992224B1 (en) * 2013-01-15 2019-06-24 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 Silicon etching liquid, silicon etching method, and microelectromechanical element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05222569A (en) * 1984-01-26 1993-08-31 Shinko Electric Ind Co Ltd Silver plating solution
JPS6223996A (en) * 1985-07-23 1987-01-31 Nippon Mining Co Ltd Silver plating method
JP2013249514A (en) * 2012-05-31 2013-12-12 Nichia Corp Electrolytic silver plating solution for optical semiconductor

Also Published As

Publication number Publication date
JPH0124231B2 (en) 1989-05-10

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