JPS5922117Y2 - Sample holding device for chemical etching - Google Patents

Sample holding device for chemical etching

Info

Publication number
JPS5922117Y2
JPS5922117Y2 JP5349878U JP5349878U JPS5922117Y2 JP S5922117 Y2 JPS5922117 Y2 JP S5922117Y2 JP 5349878 U JP5349878 U JP 5349878U JP 5349878 U JP5349878 U JP 5349878U JP S5922117 Y2 JPS5922117 Y2 JP S5922117Y2
Authority
JP
Japan
Prior art keywords
sample
sample holding
main body
etching
holding device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5349878U
Other languages
Japanese (ja)
Other versions
JPS5546601U (en
Inventor
喜一 高本
国夫 小薮
Original Assignee
日本電信電話株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電信電話株式会社 filed Critical 日本電信電話株式会社
Priority to JP5349878U priority Critical patent/JPS5922117Y2/en
Publication of JPS5546601U publication Critical patent/JPS5546601U/ja
Application granted granted Critical
Publication of JPS5922117Y2 publication Critical patent/JPS5922117Y2/en
Expired legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Description

【考案の詳細な説明】 本考案は、化学エツチング液中でシリコンウェハのよう
な円板状試料を加工するために用いる試料保持装置に関
するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a sample holding device used for processing a disk-shaped sample such as a silicon wafer in a chemical etching solution.

シリコンウェハのような円板状試料の特定な領域だけを
エツチング加工しようとする場合、従来は第1図に示す
ようにな装置を用いて試料の保持を行なっていた。
When etching only a specific region of a disk-shaped sample such as a silicon wafer, conventionally, a device as shown in FIG. 1 has been used to hold the sample.

図中、1は試料保持装置の本体で、この上に試料2を置
き、試料2の周辺部および本体1の試料2より外側の部
分にアビニシンワックスのような耐エツチング性接着剤
3をつけて、試料2を本体1に固定する。
In the figure, 1 is the main body of the sample holding device, on which the sample 2 is placed, and an etching-resistant adhesive 3 such as avinisine wax is applied to the periphery of the sample 2 and the outer part of the main body 1 from the sample 2. and fix the sample 2 to the main body 1.

この試料2を固定した本体1に、支持棒4とクロスパー
5を取付け、タンク10内のエツチング液11に浸す。
A support rod 4 and a crossbar 5 are attached to the main body 1 to which the sample 2 is fixed, and the sample is immersed in an etching liquid 11 in a tank 10.

接着剤3はエツチング液にほとんど溶解しないため、エ
ツチングを進行させたい試料面だけがエツチング液に触
れ、他の面は本体1と接着剤3によって保護される。
Since the adhesive 3 hardly dissolves in the etching solution, only the surface of the sample on which etching is desired comes into contact with the etching solution, and the other surfaces are protected by the main body 1 and the adhesive 3.

試料保持装置には、必要に応じて回転軸6を通じて回転
が与えられる。
Rotation is applied to the sample holding device through a rotating shaft 6 as necessary.

所定時間後、試料、保持装置をエツチング液から引き上
げ、水洗する。
After a predetermined period of time, the sample and holding device are taken out of the etching solution and washed with water.

その後、接着剤3を溶剤で溶かして、試料2を本体1か
らはずす。
Thereafter, the adhesive 3 is dissolved with a solvent and the sample 2 is removed from the main body 1.

以上により試料2のエツチング工程が終了するのである
が、このように試料を接着剤で固定するものでは、 i 試料の着脱に時間がかかる。
The etching process for sample 2 is thus completed, but in the case where the sample is fixed with adhesive in this way, it takes time to attach and detach the sample.

ii 接着剤で試料を固定するとき、あるいは接着剤
を試料から取除くときに、溶解した接着剤が試料面を汚
染する。
ii When fixing the sample with adhesive or removing the adhesive from the sample, the dissolved adhesive contaminates the sample surface.

などの欠点がある。There are drawbacks such as.

本考案は、このような欠点をなくした、シリコンウェハ
の化学エツチング用に好適な試料保持装置を提供するも
のである。
The present invention provides a sample holding device suitable for chemical etching of silicon wafers, which eliminates these drawbacks.

第2図は、本考案による試料保持装置を示す。FIG. 2 shows a sample holding device according to the invention.

図中、20はシリコンウェハのような円板状試料、21
は試料保持装置本体で、これには試料20を入れるため
のそれよりやや太き目の凹部22が設けられている。
In the figure, 20 is a disk-shaped sample such as a silicon wafer, and 21
Reference numeral denotes a main body of the sample holding device, which is provided with a recess 22 that is slightly thicker than the main body in which the sample 20 is placed.

23は試料押え板で、これは内径が試料20の外径より
も小さい環状に形成されている。
Reference numeral 23 denotes a sample holding plate, which is formed into an annular shape with an inner diameter smaller than the outer diameter of the sample 20.

24は試料押え板23を本体21の上に固定するための
ねじ、25は本体21の凹部22底面と試料20の裏面
周辺部との間に圧縮された状態で介在するゴム製弾性リ
ング、26は試料20の表面周辺部と試料押え板23の
対向面との間に介在する環状の薄板、27は試料20の
裏面を支える補強用円板、28は試料保持装置の支持棒
、29は支持棒同士を連結するクロスバ−130はモー
タがらの回転運動を伝達する軸である。
24 is a screw for fixing the sample holding plate 23 on the main body 21; 25 is a rubber elastic ring interposed in a compressed state between the bottom surface of the recess 22 of the main body 21 and the periphery of the back surface of the sample 20; 26; 27 is a reinforcing disk that supports the back surface of the sample 20; 28 is a support rod of the sample holding device; 29 is a support A crossbar 130 that connects the bars is a shaft that transmits the rotational motion of the motor.

つぎに、本考案の実施例として、シリコンウェハの中心
部を薄片化するエツチング加工に適用した場合について
説明する。
Next, as an embodiment of the present invention, a case where the present invention is applied to etching processing for thinning the center of a silicon wafer will be described.

試料20は、直径50 mmφ、厚さ200μmのシリ
コンウェハを用い、薄片化部の領域は中心部の約45m
mφとし、薄片化部の厚さは10μm以下とする。
Sample 20 is a silicon wafer with a diameter of 50 mmφ and a thickness of 200 μm, and the area of the thin section is about 45 m in the center.
mφ, and the thickness of the thin section is 10 μm or less.

本体21.試料押え板23、固定用ねじ24はエツチン
グ液で腐食されないようにテフロン(商品名)で製作し
、弾性リング25には真空装置用の“°O゛リングを用
いた。
Main body 21. The sample holding plate 23 and the fixing screws 24 were made of Teflon (trade name) so as not to be corroded by the etching solution, and the elastic ring 25 was an "O" ring for vacuum equipment.

試料20をセットする際には、本体21と支持棒28を
分離して、本体21の凹部22底面にゴム製弾性リング
25をのせる。
When setting the sample 20, the main body 21 and the support rod 28 are separated, and the rubber elastic ring 25 is placed on the bottom surface of the recess 22 of the main body 21.

これの上に、直径50 mmφ、厚さ2mmのテフロン
製円板27を介して試料20をのせ、さらに外径50
mmφ、内径45 mmφ、厚さ1mmのテフロン製薄
板26を試料20の上に置いて、試料押え板23を本体
21にねじ24で固定する。
On top of this, the sample 20 was placed via a Teflon disk 27 with a diameter of 50 mmφ and a thickness of 2 mm, and then a disk with an outer diameter of 50 mm
A thin Teflon plate 26 with a diameter of 45 mm and a thickness of 1 mm is placed on the sample 20, and the sample holding plate 23 is fixed to the main body 21 with screws 24.

その際、ゴム製弾性リング25が圧縮されて、その反発
力により試料20と薄板26、薄板26と試料押え板2
3が密着し、また、試料押え板23と本体21の合わせ
面もねじ締めにより密着するように各部の寸法を定めて
おく。
At that time, the rubber elastic ring 25 is compressed, and its repulsive force causes the sample 20 and the thin plate 26, and the thin plate 26 and the sample holding plate 2 to
The dimensions of each part are determined so that the sample holding plate 23 and the main body 21 are brought into close contact with each other by tightening the screws.

以上で試料のセットが終り、その後本体21に支持棒2
8を取付ける。
This completes the setting of the sample, and then attaches the support rod 2 to the main body 21.
Install 8.

弗酸、酢酸、硝酸を体積比1:2:4で混合した24°
C±0.5°Cのエツチング液中に、上記のように試料
20をセツ!−シた試料保持装置を浸し、試料保持装置
に自転および公転運動を与えながらエツチングを行なっ
た。
24° mixed hydrofluoric acid, acetic acid, and nitric acid in a volume ratio of 1:2:4
Set sample 20 in the etching solution at ±0.5°C as described above! - Etching was carried out by immersing the sample holder in the sample holder while applying rotational and orbital motion to the sample holder.

30分後に、試料保持装置を水洗し、ねじ24をゆるめ
て試料20を取り出したところ、試料押え板23、薄板
26、試料20の接触面においてエツチング液の浸透は
完全に阻止されており、試料20の中心部の約45 m
mφの領域だけがエツチングにより薄片化されていた。
After 30 minutes, the sample holder was washed with water, the screw 24 was loosened, and the sample 20 was taken out. When the sample 20 was removed from the sample holder, it was found that the etching solution was completely prevented from penetrating the contact surfaces of the sample holding plate 23, the thin plate 26, and the sample 20. Approximately 45 m in the center of 20
Only the region mφ was thinned by etching.

この実施例では、試料20の薄片化による機械的強度の
低下で試料が破壊するのを防ぐ補強用として円板27を
用いたが、エツチング後の試料の強度が十分大きい場合
には、円板27は不要である。
In this example, the disk 27 was used for reinforcement to prevent the sample from breaking due to a decrease in mechanical strength due to thinning of the sample 20. However, if the strength of the sample after etching is sufficiently large, the disk 27 is unnecessary.

また、薄板26は試料20との密着性をよくするために
用いたが、試料押え板23がテフロンのような密着性の
よい材料でつくられている場合には、薄板26を省き、
試料20の表面周辺部を直接試料押え板23の対向面に
接触させても差支えない。
In addition, the thin plate 26 was used to improve the adhesion with the sample 20, but if the sample holding plate 23 is made of a material with good adhesion such as Teflon, the thin plate 26 can be omitted.
There is no problem even if the peripheral part of the surface of the sample 20 is brought into direct contact with the opposing surface of the sample holding plate 23.

以上説明したように本考案では、試料保持装置本体の凹
部底面と試料の裏面周辺部との間に介在させたゴム製弾
性リングの反発力により試料の表面周辺部と試料押え板
の対向面との間を密着させる構成としたため、接着剤を
用いないで、試料のエツチングを必要としない部分にエ
ツチング液が浸透するのを完全に防止でき、ゴム製弾性
リングがエツチング液に冒されることもない。
As explained above, in the present invention, the repulsive force of the rubber elastic ring interposed between the bottom of the recess of the sample holding device main body and the periphery of the back surface of the sample causes the periphery of the front surface of the sample and the opposing surface of the sample holding plate to Because it is configured to have a structure in which the space between the etching parts is in close contact with each other, it is possible to completely prevent the etching liquid from penetrating into the parts of the sample that do not require etching without using adhesives, and the rubber elastic ring is also prevented from being affected by the etching liquid. do not have.

これにより、試料の着脱を短時間に能率よく行なうこと
ができ、かつ試料面が接着剤で汚染されることのない化
学エツチング用試料保持装置を提供できる。
As a result, it is possible to provide a sample holding device for chemical etching that allows the sample to be attached and detached efficiently in a short period of time, and in which the sample surface is not contaminated with adhesive.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の試料保持装置を示す断面図、第2図は本
考案による試料保持装置の断面図である。 符号の説明、20:試料、21:本体、22:凹部、2
3:試料押え板、24:固定用ねし、25:ゴム製弾性
リング。
FIG. 1 is a sectional view showing a conventional sample holding device, and FIG. 2 is a sectional view of a sample holding device according to the present invention. Explanation of symbols, 20: Sample, 21: Main body, 22: Recess, 2
3: Sample holding plate, 24: Fixing screw, 25: Rubber elastic ring.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 化学エツチング液中で円板状試料を加工する□ために用
いる試料保持装置において、試料を入れるための試料よ
りやや太き目の凹部が設けられた耐エツチング性材料か
らなる本体と、内径が試料外径より小さい環状に形成さ
れた耐エツチング性材料からなる試料押え板と、この試
料押え板を前記本体の上に固定するためのねじと、前記
本体の四部底面と試料の裏面周辺部との間に圧縮された
状態で介在するゴム製弾性リングを備え、前記ゴム製弾
性リングの反発力によって試料の表面周辺部と試料押え
板の対向面との間を密着させるようにしたことを特徴と
する化学エツチング用試料保持装置。
A sample holding device used for processing a disc-shaped sample in a chemical etching solution consists of a main body made of an etching-resistant material with a recess slightly thicker than the sample into which the sample is placed, and an inner diameter that is larger than the sample. A sample holding plate made of an etching-resistant material formed into an annular shape smaller than the outer diameter, screws for fixing the sample holding plate onto the main body, and a bottom surface of the four parts of the main body and a peripheral part of the back surface of the sample. A rubber elastic ring is provided in a compressed state in between, and the repulsive force of the rubber elastic ring brings the surface periphery of the sample into close contact with the opposing surface of the sample holding plate. Sample holding device for chemical etching.
JP5349878U 1978-04-24 1978-04-24 Sample holding device for chemical etching Expired JPS5922117Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5349878U JPS5922117Y2 (en) 1978-04-24 1978-04-24 Sample holding device for chemical etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5349878U JPS5922117Y2 (en) 1978-04-24 1978-04-24 Sample holding device for chemical etching

Publications (2)

Publication Number Publication Date
JPS5546601U JPS5546601U (en) 1980-03-27
JPS5922117Y2 true JPS5922117Y2 (en) 1984-07-02

Family

ID=28946550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5349878U Expired JPS5922117Y2 (en) 1978-04-24 1978-04-24 Sample holding device for chemical etching

Country Status (1)

Country Link
JP (1) JPS5922117Y2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928903U (en) * 1982-08-17 1984-02-23 本田技研工業株式会社 Motorcycle headlight device
JP2006237492A (en) * 2005-02-28 2006-09-07 Dainippon Screen Mfg Co Ltd Wafer processing apparatus

Also Published As

Publication number Publication date
JPS5546601U (en) 1980-03-27

Similar Documents

Publication Publication Date Title
JP2571487B2 (en) Scrubber cleaning device for thin disk-shaped workpieces
JPS5922117Y2 (en) Sample holding device for chemical etching
JPS57135067A (en) Thin film-applying machine
JPH08107091A (en) Manufacture of soi substrate
JPH03257826A (en) Cleaning of semiconductor wafer
JP2573418B2 (en) Semiconductor substrate cleaning method
JPS63117445A (en) Processing of semiconductor wafer
JP2002068885A (en) Silicon component and method of measuring amount of metal impurity on its surface
JPH02257613A (en) Removal of contamination by fine particle
JPH02185032A (en) Etching method and etching device
JPS5918638A (en) Dry etching apparatus
JPH05136045A (en) Developing method
JP2604126B2 (en) Surface treatment method for semiconductor wafer
JPH0343232Y2 (en)
JPS6035872Y2 (en) Thin sample preparation device
JPS61121335A (en) Processing method for grounding surface of wafer
HUNT Silicon membrane formation(Final Report)
JPS63187630A (en) Liquid processor for semiconductor wafer
JPH0410736B2 (en)
JPS6240760Y2 (en)
JPH0936209A (en) Film formation device and substrate supporting jig for use in this device
JPH04125928A (en) Manufacture of semiconductor device
JPS6035873Y2 (en) Thin sample preparation device
JPH01196834A (en) Electrophoresis device
JPH0355835A (en) Semiconductor device retaining carrier