JPS59218727A - 半導体基体への不純物導入方法 - Google Patents

半導体基体への不純物導入方法

Info

Publication number
JPS59218727A
JPS59218727A JP58093218A JP9321883A JPS59218727A JP S59218727 A JPS59218727 A JP S59218727A JP 58093218 A JP58093218 A JP 58093218A JP 9321883 A JP9321883 A JP 9321883A JP S59218727 A JPS59218727 A JP S59218727A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
boron
substrate
impurity
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58093218A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0436454B2 (https=
Inventor
Noritada Sato
則忠 佐藤
Yasukazu Seki
康和 関
Osamu Ishiwatari
石渡　統
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP58093218A priority Critical patent/JPS59218727A/ja
Priority to US06/613,778 priority patent/US4618381A/en
Publication of JPS59218727A publication Critical patent/JPS59218727A/ja
Publication of JPH0436454B2 publication Critical patent/JPH0436454B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Photovoltaic Devices (AREA)
JP58093218A 1983-05-26 1983-05-26 半導体基体への不純物導入方法 Granted JPS59218727A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58093218A JPS59218727A (ja) 1983-05-26 1983-05-26 半導体基体への不純物導入方法
US06/613,778 US4618381A (en) 1983-05-26 1984-05-24 Method for adding impurities to semiconductor base material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58093218A JPS59218727A (ja) 1983-05-26 1983-05-26 半導体基体への不純物導入方法

Publications (2)

Publication Number Publication Date
JPS59218727A true JPS59218727A (ja) 1984-12-10
JPH0436454B2 JPH0436454B2 (https=) 1992-06-16

Family

ID=14076415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58093218A Granted JPS59218727A (ja) 1983-05-26 1983-05-26 半導体基体への不純物導入方法

Country Status (1)

Country Link
JP (1) JPS59218727A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439721A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Introduce method for impurity to semiconductor
JPH01194320A (ja) * 1988-01-28 1989-08-04 Fuji Electric Co Ltd 半導体基体への不純物導入方法
JPH01241175A (ja) * 1988-03-23 1989-09-26 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタの製造方法
JPH0323627A (ja) * 1989-06-21 1991-01-31 Matsushita Electric Ind Co Ltd プラズマドーピング方法及びその装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57197824A (en) * 1981-05-12 1982-12-04 Siemens Ag Method and device for filling impurity to semiconductor material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57197824A (en) * 1981-05-12 1982-12-04 Siemens Ag Method and device for filling impurity to semiconductor material

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439721A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Introduce method for impurity to semiconductor
JPH01194320A (ja) * 1988-01-28 1989-08-04 Fuji Electric Co Ltd 半導体基体への不純物導入方法
JPH01241175A (ja) * 1988-03-23 1989-09-26 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタの製造方法
JPH0323627A (ja) * 1989-06-21 1991-01-31 Matsushita Electric Ind Co Ltd プラズマドーピング方法及びその装置

Also Published As

Publication number Publication date
JPH0436454B2 (https=) 1992-06-16

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