JPS59215136A - Noise level supervising device of semiconductor laser - Google Patents

Noise level supervising device of semiconductor laser

Info

Publication number
JPS59215136A
JPS59215136A JP58089801A JP8980183A JPS59215136A JP S59215136 A JPS59215136 A JP S59215136A JP 58089801 A JP58089801 A JP 58089801A JP 8980183 A JP8980183 A JP 8980183A JP S59215136 A JPS59215136 A JP S59215136A
Authority
JP
Japan
Prior art keywords
output
semiconductor laser
signal
noise
noise level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58089801A
Other languages
Japanese (ja)
Inventor
Masahiro Suzuki
正博 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58089801A priority Critical patent/JPS59215136A/en
Publication of JPS59215136A publication Critical patent/JPS59215136A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/07Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Monitoring And Testing Of Transmission In General (AREA)
  • Optical Communication System (AREA)

Abstract

PURPOSE:To detect the fluctuation in a transmission characteristic in the operation of a line by superimposing a pilot signal on an analog signal so as to apply light intensity modulation to a semiconductor laser, receiving a part of this output light, converting the light into an electric signal and extracting noise component by a BPF so as to supervise its level. CONSTITUTION:An output of a pilot signal source 2 is coupled to an output of an analog electric signal source 1 by a coupler 3 and its output is amplified by an amplifier 4. The intensity modulation is applied to the semiconductor laser 5 by an output signal of the amplifier 4 and an output is obtained from a light output terminal 11. Further, a part of an output of the laser 5 is intercepted by a photodetector 6 and an amplifier 7 amplifies a transmission signal including noise near the pilot signal P. The noise component near the frequency of the pilot signal P from the output of the amplifier 7 is extracted by the BPF8, its output is rectified by a rectifier circuit 9, a discriminating circuit 10 supervises the noise level during the operation of line to detect the fluctuation in the transmission characteristic.

Description

【発明の詳細な説明】 本発明は、半導体レーザをアナログ電気信号で光強度変
調する光通信方式にお(・て、前記半導体レーザの動作
状態、特に発振スペクトルの変動による雑音レベルの変
動を監視する、半導体レーザの雑音レベル監視装置に関
する。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides an optical communication system that modulates the light intensity of a semiconductor laser with an analog electrical signal (by monitoring the operating state of the semiconductor laser, especially the fluctuations in the noise level due to fluctuations in the oscillation spectrum). The present invention relates to a semiconductor laser noise level monitoring device.

従来、光通信方式において、半導体レーザの動作状態に
つ(・ては、半導体レーザの光出力レベルおよびバイア
ス電流が監視され、これによって半導体レーザの劣化が
検知されるに過ぎなかった。
Conventionally, in optical communication systems, the operating state of a semiconductor laser has been monitored, such as the optical output level and bias current of the semiconductor laser, and deterioration of the semiconductor laser has only been detected based on this.

アナログ電気信号による光強度変調方式の場合には、単
に半導体レーザの光出力レベルが所定値であることのみ
ならず、半導体レーザの雑音特性が良好であることが必
要である。半導体レーザの雑音レベル変動は、半導体レ
ーザ自体の劣化、変調度の増大、温度変化、または外部
の光伝送路からの反射戻り光等が原因で、半導体レーザ
の発振スペクトルが変動することにより生するもので、
上記バイアス電流の監視によっても、ある程度の変動は
監視できるが不十分である。アナログ電気信号による光
強度変調方式にお(・ては、半導体レーザでの雑音レベ
ルの変動により、元ファイバ伝送路の伝送特性が大幅に
変動する傾向があるので、送信側にて雑音レベルを監視
することが必要となる場合でも、従来は回線運用中は監
視できたかった。
In the case of a light intensity modulation method using an analog electrical signal, it is necessary not only that the optical output level of the semiconductor laser be a predetermined value, but also that the semiconductor laser have good noise characteristics. Semiconductor laser noise level fluctuations are caused by fluctuations in the semiconductor laser's oscillation spectrum due to deterioration of the semiconductor laser itself, an increase in the degree of modulation, temperature changes, or reflected return light from an external optical transmission path. Something,
Although fluctuations can be monitored to some extent by monitoring the bias current, it is insufficient. In optical intensity modulation methods using analog electrical signals, the transmission characteristics of the original fiber transmission line tend to change significantly due to fluctuations in the noise level in the semiconductor laser, so the noise level must be monitored on the transmitting side. In the past, even if it was necessary to monitor the line while it was in operation, it was possible to monitor it while the line was in operation.

本発明の目的は、上述の従来の欠点を解決し、回線運用
状態のままで半導体レーザの雑音レベルを監視すること
ができる装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional drawbacks and to provide a device that can monitor the noise level of a semiconductor laser while the line is in operation.

本発明の構成について述べると、本発明は、半導体レー
ザをアナログ電気信号で光強度変調する光通信方式にお
(・て、変調を行うためのアナログ電気信号源と、雑音
レベルの監視を行うために設置されるパイロット信号源
と、前記両信号源からのアナログ電気信号とパイロット
信号とを結合する結合器と、この結合器からの出力信号
により変調を受ける半導体レーザと、この半導体レーザ
の発光出力の一部を受光して電気信号に変換する受光素
子と、この受光素子の出力から前記パイロット信号によ
り生じた雑音成分を抽出する帯域フィルタと、この帯域
フィルタ出力を整流する整流回路と、この整流回路出力
の大小を判別して雑音の大小を識別する判別回路とより
構成された半導体レーザの雑音レベル監視装置である。
Describing the structure of the present invention, the present invention employs an optical communication system that modulates the light intensity of a semiconductor laser with an analog electrical signal (2) an analog electrical signal source for modulating a semiconductor laser, and an analog electrical signal source for monitoring the noise level. A pilot signal source installed in a light receiving element that receives a part of the light and converts it into an electrical signal, a bandpass filter that extracts a noise component generated by the pilot signal from the output of the light receiving element, a rectifier circuit that rectifies the bandpass filter output, and a rectifier that rectifies the bandpass filter output. This is a semiconductor laser noise level monitoring device that includes a discrimination circuit that discriminates the magnitude of noise by discriminating the magnitude of circuit output.

以下本発明を実施例により図面を参照して説明する。The present invention will be explained below by way of examples with reference to the drawings.

第1図は本発明の一実施例を示すブロック図である。第
1図において、アナログ電気信号源1の出力は、結合器
3によってパイロット電気信号諒2の出力と結合され、
増幅器4で増幅される。半導体レーザ5は、前記増幅器
4の出力信号によって、強度変調された光出力を出し、
光出力端子11から伝送路へ送出する。一方、半導体レ
ーザ5の光出力の一部は、受光素子6で傍受されて、増
幅器7で増幅される。このとき増幅される信号は、第2
図に示すように、伝送信号aと、これと同帯域の雑音ル
αと、前記伝送信号αより周波数が高いパイロット信号
pと、この信号pの近傍に生成した雑音TLpより成っ
て(・る。そしてこの増幅器7の出力は帯域フィルタ8
によってパイロット信号周波数近代(ただしパイロット
信号pとハ これに極めて接近した部分を除く)の雑音成分が抽出さ
れる。帯域フィルタ8の出力は整流回路9で整流され、
判別回路10で雑音レベルの変化か監視さ才りる。
FIG. 1 is a block diagram showing one embodiment of the present invention. In FIG. 1, the output of an analog electrical signal source 1 is combined with the output of a pilot electrical signal source 2 by a coupler 3;
The signal is amplified by an amplifier 4. The semiconductor laser 5 outputs an optical output whose intensity is modulated by the output signal of the amplifier 4,
It is sent out from the optical output terminal 11 to the transmission line. On the other hand, a part of the optical output of the semiconductor laser 5 is intercepted by the light receiving element 6 and amplified by the amplifier 7. The signal amplified at this time is
As shown in the figure, it consists of a transmission signal a, a noise signal α in the same band, a pilot signal p having a higher frequency than the transmission signal α, and a noise TLp generated in the vicinity of this signal p. The output of this amplifier 7 is passed through a bandpass filter 8.
The noise component of the pilot signal frequency (excluding the portions very close to the pilot signals p and c) is extracted by . The output of the bandpass filter 8 is rectified by a rectifier circuit 9,
A discrimination circuit 10 monitors whether the noise level changes.

上述の各回路にお−・て、増幅器4,7、受光素子6の
雑音特性は、半導体レーザ5の雑音特性よりも十分良好
である。半導体レーザ5が、経時劣化、変調度の増大、
温度変化、または外部の光伝送路からの反射戻り光等に
より、発振スペクトルに変化が生じ、直流領域にピーク
をもつ低周波雑音rL(Lが発生すると、パイロット信
号周波数pを中Iひとする雑音成分ル、も生じるので、
本例の構成により、半導体レーザ5で発生した雑音レベ
ルが監視される。
In each of the circuits described above, the noise characteristics of the amplifiers 4 and 7 and the light receiving element 6 are sufficiently better than the noise characteristics of the semiconductor laser 5. The semiconductor laser 5 deteriorates over time, increases the degree of modulation,
Changes in the oscillation spectrum occur due to temperature changes or reflected return light from an external optical transmission path, resulting in low frequency noise rL with a peak in the DC region. The component ru also occurs, so
With the configuration of this example, the noise level generated by the semiconductor laser 5 is monitored.

パイロット信号周波数近傍の雑音うは、第2図に示すよ
うに、雑音のレベルにより周波数範囲が変化するので、
帯域フィルタ8の出力の大小により、半導体V−ザ5で
発生している勅音レベルの大きさが検出できる。
As shown in Figure 2, the frequency range of noise near the pilot signal frequency changes depending on the noise level.
Depending on the magnitude of the output of the bandpass filter 8, the magnitude of the noise level generated in the semiconductor V-zer 5 can be detected.

上述の構成により、半導体レーザ5は、回線Ji用状態
のまま、送信側にて雑音レベルが検出され、光フアイバ
伝送路への伝送後の伝送特性をある程度監視できる。ま
た、半導体レーザ5で発生する変調歪成分の大小にも依
存して雑音成分も変化するので、変調歪の監視もある程
度可能となる。
With the above-described configuration, the noise level of the semiconductor laser 5 is detected on the transmitting side while the semiconductor laser 5 remains in the line Ji state, and the transmission characteristics after transmission to the optical fiber transmission line can be monitored to some extent. Moreover, since the noise component also changes depending on the magnitude of the modulation distortion component generated by the semiconductor laser 5, it becomes possible to monitor the modulation distortion to some extent.

以上に説明したように、本発明によれは、アナログ電気
信号にパイロット信号を重畳して半導体レーザを光強度
変調し、その半導体レーザの出力光の一部を受光して電
気信号に変換し、帯域フィルタによって雑音成分を抽出
してレベルを監視するように構成しているので、回想運
用中でも半導体V−ザの雑音特性の変動、およびこれに
基づく光フアイバ伝送特性の変動を検出することが可能
になる。
As explained above, according to the present invention, a pilot signal is superimposed on an analog electrical signal to modulate the optical intensity of a semiconductor laser, and a part of the output light of the semiconductor laser is received and converted into an electrical signal. Since it is configured to extract the noise component using a bandpass filter and monitor the level, it is possible to detect fluctuations in the noise characteristics of the semiconductor V-za and fluctuations in the optical fiber transmission characteristics based on this even during recall operation. become.

【図面の簡単な説明】 第1図は本発明の実施例のブロック回路図、第2図は第
1図の帯域フィルタ8に入力する信号と雑音の周波数特
性を示す図である。 ■・・・・・・アナログ電気信号源、2・・・・・・パ
イロット信号源、3・・・・・・結合器、4,7・・・
・・・増幅器、5・・・半、O俸し−ザ、6・・・・・
・受光素子、8・・・・・・帯域ンイ)vり、9・・・
・・・整流回路、10・・・・・・判別回路、11・・
・・・・伝送路への光出力端子。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block circuit diagram of an embodiment of the present invention, and FIG. 2 is a diagram showing the frequency characteristics of the signal and noise input to the bandpass filter 8 of FIG. 1. ■...Analog electrical signal source, 2...Pilot signal source, 3...Coupler, 4, 7...
...Amplifier, 5...half, O-pay-the, 6...
・Light receiving element, 8...bandwidth), 9...
... Rectifier circuit, 10 ... Discrimination circuit, 11 ...
...Optical output terminal to the transmission line.

Claims (1)

【特許請求の範囲】[Claims] 半導体レーザをアナログ電気信号で光強度変調する光通
信方式にお(・て、変調、を行うためのアナログ電気信
号源と、雑音レベルの監視を行うために設置されるパイ
ロット信号源と、前記両信号源からのアナログ電気信号
とパイロット信号を結合する結合器と、この結合器から
の出力信号により変調を受ける半導体レーザと、この半
導体レーザの発光出力の一部を受光して電気信号に変換
する受光素子と、この受光素子の出力から前記パイロッ
ト信号により生じた雑音成分を抽出する帯域フィルタと
、この帯域フィルタ出力を整流する整流回路と、この整
流回路出力の大小を判別して雑音の大小を識別する判別
回路とより構成されていることを特徴とする半導体レー
ザの雑音レベル監視装置。
An optical communication system that modulates the optical intensity of a semiconductor laser with an analog electrical signal includes an analog electrical signal source for modulating, a pilot signal source installed to monitor the noise level, and both of the above. A coupler that combines an analog electrical signal from a signal source with a pilot signal, a semiconductor laser that is modulated by the output signal from this coupler, and a part of the emitted light output of this semiconductor laser that is received and converted into an electrical signal. A light receiving element, a bandpass filter that extracts a noise component generated by the pilot signal from the output of the light receiving element, a rectifier circuit that rectifies the output of the bandpass filter, and a rectifier circuit that determines the magnitude of the output of the rectifier circuit to determine the magnitude of the noise. 1. A noise level monitoring device for a semiconductor laser, comprising a discrimination circuit for identifying the noise level.
JP58089801A 1983-05-21 1983-05-21 Noise level supervising device of semiconductor laser Pending JPS59215136A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58089801A JPS59215136A (en) 1983-05-21 1983-05-21 Noise level supervising device of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58089801A JPS59215136A (en) 1983-05-21 1983-05-21 Noise level supervising device of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS59215136A true JPS59215136A (en) 1984-12-05

Family

ID=13980815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58089801A Pending JPS59215136A (en) 1983-05-21 1983-05-21 Noise level supervising device of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS59215136A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4742575A (en) * 1984-04-04 1988-05-03 Hitachi, Ltd. Light signal transmission/reception system
US5023945A (en) * 1989-12-21 1991-06-11 Gte Laboratories Incorporated Transmission system using parallel optic links to achieve enhanced dynamic range
US5282074A (en) * 1992-01-31 1994-01-25 Fujitsu Limited Optical amplification repeating system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4742575A (en) * 1984-04-04 1988-05-03 Hitachi, Ltd. Light signal transmission/reception system
US5023945A (en) * 1989-12-21 1991-06-11 Gte Laboratories Incorporated Transmission system using parallel optic links to achieve enhanced dynamic range
US5282074A (en) * 1992-01-31 1994-01-25 Fujitsu Limited Optical amplification repeating system

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