JPS59214554A - Beveling grinder for wafer - Google Patents
Beveling grinder for waferInfo
- Publication number
- JPS59214554A JPS59214554A JP8502383A JP8502383A JPS59214554A JP S59214554 A JPS59214554 A JP S59214554A JP 8502383 A JP8502383 A JP 8502383A JP 8502383 A JP8502383 A JP 8502383A JP S59214554 A JPS59214554 A JP S59214554A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- thickness
- shaft
- face
- grindstone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006073 displacement reaction Methods 0.000 claims abstract description 6
- 241000257465 Echinoidea Species 0.000 claims description 7
- 238000004364 calculation method Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 10
- 238000001514 detection method Methods 0.000 claims 1
- 230000033001 locomotion Effects 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は半導体素イ製蓬の過程におい一乙その素材と
なるシリコン等の基板（一般にウニ・・−と称せられる
）の外周を研削して上下面の面取り研削を行う装置に係
るものである。[Detailed Description of the Invention] This invention involves grinding the outer periphery of a substrate such as silicon (commonly referred to as a sea urchin) and chamfering the top and bottom surfaces in the process of manufacturing a semiconductor device. This is related to the equipment that performs this.
このために従来溝形の凹部を脣する砥石をウニノー外周
に当てて、上−Ｆの面取りを行っていた。For this purpose, conventionally, a grindstone that covers the groove-shaped recess is applied to the outer periphery of the Uni-No to chamfer the top -F.
このときウェハーはその厚さＤｌが指定されて切断され
るので、厚さはＩ）１のものとして凹状の砥石を上下面
に当てて面取りを行い、その次の工程で厚さを正確に揃
えるだめに上下面の表面研削を行っている。ところが厚
さＤｌは目標値、もしくは平均値であって、 ＤＩ±
αの厚さを有するものを厚さＤｌとして砥石にかけると
上下面で面取り寸法に差が生ずる。At this time, the wafer is cut with a specified thickness Dl, so the thickness is assumed to be I) 1, and a concave grindstone is applied to the upper and lower surfaces to chamfer it, and in the next step, the thickness is precisely aligned. The surface of the top and bottom surfaces is ground to no avail. However, the thickness Dl is a target value or an average value, and DI±
When a material having a thickness of α is put on a grindstone with a thickness of Dl, a difference occurs in the chamfer dimensions on the upper and lower surfaces.
第１図において厚さＤｌの標準ウエノ・−に合せて面取
りを調節して上下に等しい量ａ−乃、 ａ −ｄの面
取りが出来るようにしであるところに、 Ｄｌ十α−Ｄ
２のウェハー（一点鎖線で示す）が入ってくると１面取
りは上面基準で行なれは、垂直部σ−Ｃ間距離Ｓは一定
値に取るために、上面はａ−６，下面はＣ−６の面取り
が行われる。そしてこれを表面研削盤にかけて、上下面
同じ厚さくα６）だけ研削切除すると、上面はＡ −ｆ
、 Ｆ面はｃ −９の面取りとなって、上下面で面
取り量が相違し。In Fig. 1, the chamfering is adjusted according to the standard wafer of thickness Dl so that chamfering of the same amount a-no, a-d can be done on the top and bottom, Dl + α-D.
When a wafer No. 2 (indicated by a dashed line) comes in, one side is machined based on the top surface.In order to keep the distance S between the vertical parts σ and C constant, the top surface is a-6 and the bottom surface is C-6. 6 chamfering is performed. Then, use a surface grinder to grind and remove the same thickness α6) on the top and bottom surfaces, and the top surface will be A − f
, The F side has a c-9 chamfer, and the amount of chamfering is different on the upper and lower surfaces.
次工程に支障をきだす。このことはウエノ・−がＤｌ−
αであっても同様であって、第２図はこれを示し、一点
鎖線はウエノ・−の実際の厚さＤ２を示す。It will interfere with the next process. This means that Ueno- is Dl-
The same applies to α, and FIG. 2 shows this, and the dashed line indicates the actual thickness D2 of Ueno.
ここでも上面はα−６，上面はＧ−にとなって上下面で
差が出ることになる。Here again, the upper surface is α-6 and the upper surface is G-, so there is a difference between the upper and lower surfaces.
本発明はこのような欠点を改善するだめの研削装置で、
従来のように実際のウエノ１−の厚さに関係なく、設計
厚さＤｌをもって研削するのではなく。The present invention is a grinding device that improves these drawbacks.
Instead of grinding with the designed thickness Dl, regardless of the actual thickness of the wafer 1-, as in the past.
実際の厚さに応じた研削を行うことを目的としだもので
ある。なお本発明において使用される研削装置は１本願
出願人と同一出願人による特公昭５７−１０５６８号に
示されたものを主としで使用するので、まずこの概要を
説明する。The purpose is to perform grinding according to the actual thickness. Since the grinding device used in the present invention is mainly the one disclosed in Japanese Patent Publication No. 10568/1983 by the same applicant as the present applicant, an outline thereof will be explained first.
第３．４図において、Ａはウェハー】を保持して回転並
びに上下動を行うウェハー保持部、Ｂは八を上下に変位
させる機構、Ｃはウニ・・−】に押し付けられて、ウェ
ハーの面取りを行う砥石機構である。そしてＡＶ′ｉ、
ウエノ・−の上部と下部とに分れ、上部の＠２の下端に
はウェハー」に接触する上部の座３を有し、モーター４
によって回転する。In Fig. 3.4, A is the wafer holder that holds the wafer and rotates it and moves it up and down, B is the mechanism that displaces the wafer up and down, and C is the mechanism that presses against the sea urchin and chamfers the wafer. This is a grinding wheel mechanism that performs this process. And AV′i,
The wafer is divided into an upper part and a lower part, and the lower end of the upper part has an upper seat 3 that contacts the wafer, and a motor 4.
Rotate by.
そして軸２の軸受部５は垂直壁６によって上下動可能と
する。捷だ軸受部５はその裏側（第４図の左側）の上下
動機構Ｂに連結芒れている。Ｂｉｄ町逆パルスモータ７
によって回転するねじ軸８を有し、軸受部５に取付けら
れためねじ９を介してパルスモータの回転を上下動に変
換する。丁なわちパルス数の制御によって上部軸の上下
動を制御する。The bearing portion 5 of the shaft 2 is movable up and down by a vertical wall 6. The twisted bearing part 5 is connected to the vertical movement mechanism B on the back side (left side in FIG. 4). Bid town reverse pulse motor 7
The pulse motor has a screw shaft 8 that rotates by a screw shaft 8, and converts the rotation of the pulse motor into vertical motion via an internal screw 9 attached to the bearing portion 5. The vertical movement of the upper shaft is controlled by controlling the number of pulses.
へ機構のウェハー１の丁はウェハーの保持軸受は機構を
構成し、下の軸Ｈの上端にはウニか−】を下から受ける
下部床Ｊ２を有する。そして軸Ｊ】は軸受け】３＆てよ
って支えられる。軸受け】３はその丁方にフリージヨイ
ント】４．上下動伝達機構３７．７１Ｊンダー】５と連
結される。ここで上下動伝達機構】７は第５図に示す構
造であ、りて。The wafer holding bearing of the wafer mechanism constitutes a mechanism, and the upper end of the lower shaft H has a lower floor J2 for receiving the sea urchin from below. And the shaft J] is supported by the bearing]3&. Bearing] 3 has a free joint on its side] 4. It is connected to the vertical motion transmission mechanism 37.71 J]5. Here, the vertical motion transmission mechanism 7 has the structure shown in FIG.
フリージヨイント】４の下部は円筒Ｊ８となっていて、
これに複数の切欠き】９が垂直に入っている。Free joint] The lower part of 4 is a cylinder J8,
This has multiple notches ]9 perpendicular to it.
そして下のシリンダー】６の垂直上向きのピストンロッ
ド」６の上部はこの円筒１８の中に入り、その頭部には
水平にピン２０を出し、ピン２ｏは円筒】８の切欠き】
９の中を貫通する。そしてピン２０の先端と円筒１８の
下端との間に各々スプリング２１を取付ける。The upper part of the vertically upward piston rod 6 of the lower cylinder 6 goes into this cylinder 18, and a pin 20 extends horizontally from its head, and the pin 2o is the notch of the cylinder 8.
Penetrate through 9. A spring 21 is then installed between the tip of the pin 20 and the lower end of the cylinder 18, respectively.
ここでこの上下動機構はウエノ・−１を取付けるだめの
機構であって、かつＢのウエノ・−の上下動を吸収する
。すなわちウエノ・−の取利け、取りはずしに際して、
シリンダー１５を働か伊てピストンロッドｊ６を下降さ
せると、ピン２０は円筒の切欠き１９の下端に当ってフ
リージョ・インドＪ４．軸受け】３を下降させ、下部軸
１１．を下降させて、上下の座３．】２の間を開く。そ
こでウエノ・−１を入れて、シリンダーＪ５のピストン
を上昇させると、下部軸月はスフリング２】によってω
り上げられて、ウェハーをスプリングの１眉り上シカに
よって常時保持する。そして上部軸がＢの駆動によって
上下動すると、これにつれて円筒】８も上下動する。こ
のときピン２０は切欠き】９の中間位置にあるため、下
部軸月は上部軸２に追従することができる。Here, this vertical movement mechanism is a mechanism for attaching Ueno-1, and absorbs the vertical movement of Ueno-B. In other words, when taking or removing Ueno--,
When the cylinder 15 is activated and the piston rod j6 is lowered, the pin 20 hits the lower end of the notch 19 of the cylinder and the Freejo India J4. Lower the lower shaft 11. Lower the upper and lower seats 3. ]Open the space between 2. Then, when Ueno-1 is put in and the piston of cylinder J5 is raised, the lower shaft moon is ω due to Sfring 2]
The wafer is constantly held by a spring. When the upper shaft moves up and down by the drive of B, the cylinder [8] also moves up and down accordingly. At this time, since the pin 20 is in the middle position of the notch 9, the lower shaft can follow the upper shaft 2.
砥石機構Ｃに使用される円形の砥石２２はモータ２６に
よって回転し、モーフ、砥石は一体となり−Ｃ水平ベッ
ト上をウェイト２７により左方向に押し刊けられて、砥
石をウェハーＪに接触させて研削を行う。ここで砥石２
２は第６図に示すようにくぼみを有し、２３は凹部の底
の部分で垂直部分とする。２４． ２５は上下の傾斜面
を構成し、傾胴面２４はウェハーの上面の面取り、２５
は下面の面取りを行う。すなわち第１図に示した面取り
線ｏ、 −８，ｃ −−ｄの形状、傾狛角度は２４．２
５の形状によって決捷り、これを曲綽にすれは傾斜曲面
をもって面取りすることも可能である。なお砥石の切り
込み制御については前記公報に記載されているのでこれ
を省略する。A circular grindstone 22 used in the grindstone mechanism C is rotated by a motor 26, and the morph and the grindstone are integrally pushed to the left by a weight 27 on the -C horizontal bed, bringing the grindstone into contact with the wafer J. Perform grinding. Here, whetstone 2
2 has a recess as shown in FIG. 6, and 23 is a vertical portion at the bottom of the recess. 24. Reference numeral 25 constitutes an upper and lower inclined surface, and the inclined surface 24 is a chamfer on the upper surface of the wafer.
chamfers the bottom surface. In other words, the shape of the chamfer lines o, -8, c -- d shown in Fig. 1 and the tilting angle are 24.2.
Depending on the shape of 5, it is also possible to chamfer the curved surface with an inclined curved surface. Note that the cutting control of the grindstone is described in the above-mentioned publication, so a description thereof will be omitted.
ここで第１の発明においてはＡの下部袖口に変位量の読
取り装置を付ける。これにば１例として袖口にスケール
２８を数例け、これに対応して読取器２７を設ける。な
お軸に突出部を設けて。In the first invention, a displacement reading device is attached to the lower cuff of A. For example, several scales 28 are placed on the cuffs, and a reader 27 is provided correspondingly. In addition, a protrusion is provided on the shaft.
これに当接する電気マ・イクロメータを取付けでも良い
。ここでＢのモータ７を駆動して上部床３の下面位置を
基準位置゛に停止させる。これを１の制御とする。ぞし
てこれをウェハーの受取位置としで、前述のように下部
床１２をシリンダ】５を作動させて下降し、この間にウ
ェハー】を挾む。そうすると下部軸１ＪはスプリングＪ
７によ゛って下部床】２をウェハーに押し付ける。この
とき下部軸の変位量読み取り装置によってウェハーの厚
さＤ２を検知することができる。An electric micrometer that comes into contact with this may be attached. Here, the motor 7 of B is driven to stop the lower surface position of the upper floor 3 at the reference position. This is referred to as 1 control. Then, using this as a wafer receiving position, the lower floor 12 is lowered by operating the cylinder 5 as described above, and the wafer 2 is held in between. Then, the lower shaft 1J is the spring J
7. Press the lower floor] 2 onto the wafer. At this time, the thickness D2 of the wafer can be detected by the displacement reading device of the lower shaft.
第７図においてウェハーの厚みの中心線に対して上下対
称の面取りを行えば良いが、Ｓは前述のように一定値で
ある。そこで上下面において各々ＥＧ、ＦＨの研削を行
えば、Ｄ２−（Ｄｌ＋α）のウェハーを次工程で上下に
α力研削することによって正しい面取シが出来る。ここ
で砥石・の傾斜面２４、２５をＩＫ、ＪＬとし、ＩＪを
垂直面、 ＩＪ間距離を１とする。ここで砥石は水平
にウェハーに向って進むので、ウェハーのＥ点を砥石の
１点に当て、その後にＦ点が５点にくるようにウェハー
を下降させてやれば良い。そこで」例として砥
□石機構Ｃの滑動面を基準として１点がＸの距離にめる
とすると、ウェハーの上面、すなわち上部床３の下面は
Ｘ ＋ （１）２ Ｓ’ ）／２とすれば良い。そこ
で上下動駆動のモータ７を制御してこの位置として、砥
石を左方に進める。これをＨの制御とする。In FIG. 7, chamfering may be performed vertically symmetrically with respect to the center line of the wafer thickness, but S is a constant value as described above. Therefore, by performing EG and FH grinding on the upper and lower surfaces respectively, correct chamfering can be achieved by subjecting the D2-(Dl+α) wafer to upper and lower α force grinding in the next step. Here, the inclined surfaces 24 and 25 of the grindstone are IK and JL, IJ is a vertical surface, and the distance between IJ is 1. Here, since the grindstone moves horizontally toward the wafer, it is sufficient to hit point E of the wafer with one point of the grindstone, and then lower the wafer so that point F comes to point 5. So, for example,
□If one point is placed at a distance of X with the sliding surface of the stone mechanism C as a reference, then the upper surface of the wafer, that is, the lower surface of the upper floor 3 may be X + (1)2 S' )/2. Therefore, the vertical drive motor 7 is controlled to set this position, and the grindstone is advanced to the left. This is called H control.
次に上部床３を（ｉ−８）だけ下降させる。これによっ
てＦ点は砥石の５点に一致する。これを■の制御とする
。Next, the upper floor 3 is lowered by (i-8). As a result, point F coincides with the five points on the grindstone. This is referred to as control (■).
なおり２ ＝ Ｄｔ−αの場合もまったく同じであって
１以上の制御によって水平方向の中心線に対して上下対
称の面取り研削が可能である。The case of Naori 2 = Dt-α is exactly the same, and chamfer grinding that is vertically symmetrical with respect to the horizontal center line is possible by one or more controls.
ここで上記ｒ、ｎ、ｍの制御はパルスモータ７に入れる
パルス数の制御により、その結果は回転角度検出器】０
によって検知されるので、従来公知のマイコン技術のデ
ィジタル制゛御によって容易に可能である。すなわち■
の上部床を基準位置に設定するには、パルスモータの任
意の点を原点と設定し、変位量検出器が読み取りに便利
な位置とすれば良い。そし−ＣＤ２はスケール方式なら
ば直読方式で、電気マイクロ方式であれば基８月法Ｄ１
に対する差αとして取出されるので、これをＤｌに加減
することによってＤ２が算出される。ついでＨの制御は
、既知のＸ値を原点よりのパルス数として記憶し、これ
に対して（Ｄ２−８）／２の演算結果を加減する。そし
てその結果によってモータを回転する。■の制御はＨに
よって制御された位置より既知量（” ｓ）に対応す
るパルス数だけの回転を行えば良い。なお上下面の面取
り操作は上面を完了してから下面に移る方式でも、上下
面を少しずつ研削して次第に切込量を増加する上下動方
式でも良い。また逆に下面の面取りを行って後上面の面
取りを行うことも可能である。Here, the above r, n, and m are controlled by controlling the number of pulses input to the pulse motor 7, and the result is the rotation angle detector]0
This can be easily achieved by digital control using conventionally known microcomputer technology. In other words,■
To set the upper floor of the motor as the reference position, it is sufficient to set an arbitrary point on the pulse motor as the origin and set it at a position convenient for the displacement detector to read. Then - CD2 is a direct reading method if it is a scale method, and a basic August method D1 if it is an electric micro method.
D2 is calculated by adding or subtracting this to Dl. Next, the H control stores the known X value as the number of pulses from the origin, and adds or subtracts the calculation result of (D2-8)/2 to it. The motor is then rotated based on the result. For the control of (2), it is sufficient to rotate the position controlled by H by the number of pulses corresponding to the known amount (''s).The chamfering operation on the upper and lower surfaces can be performed by completing the upper surface and then moving to the lower surface. A vertical movement method in which the lower surface is ground little by little and the depth of cut is gradually increased may be used.Conversely, it is also possible to chamfer the lower surface and then chamfer the upper surface.
以上に示す本発明の面取り研削により、ウェハーの厚さ
に係わらず常に上下面の面取り量を等しくすることがで
きるので１表面研削によっても何の支障をきたすことが
ない。By the chamfer grinding of the present invention as described above, the amount of chamfering on the upper and lower surfaces can always be made equal regardless of the thickness of the wafer, so even one surface grinding does not cause any trouble.
以上の第１の発明においては上下軸の座の間にウェハー
を挾むことにより、その厚さを測定したが、第２の発明
においては搬入されるウェハーを厚さ測定装置に入れて
厚さＤ２を検知してから。In the first invention described above, the thickness of the wafer is measured by sandwiching the wafer between the seats of the upper and lower shafts, but in the second invention, the wafer being carried in is placed in a thickness measuring device and the thickness is measured. After detecting D2.
このウェハーを上下軸の間に送シ込む。なお厚さの測定
部には電気マイクロメータ一方式、空気マイクロメータ
一方式、モ／Ｌ縞読取方式、電磁スケール方式等いすｎ
を使っても良く、願わしくは複数個所で測定して平均値
によりＤ２を求める。なおばらつきが許容値以上のもの
は不合格品とする等の検査機能を具えることもできる。This wafer is fed between the upper and lower shafts. The thickness can be measured using one type of electric micrometer, one type of air micrometer, one type of M/L stripe reading method, and one type of electromagnetic scale.
may also be used, preferably D2 is determined by measuring at multiple locations and using the average value. Note that it is also possible to provide an inspection function such as rejecting products whose variation exceeds an allowable value.
そして第２の発明では上下軸で挾むことによって厚さを
求めるのではないので、下部軸の変位検出手段は不安で
ある。そしてＤ２ｎめられれば、これによる研削制御は
第１の発明と同様に行えは良い。In the second invention, since the thickness is not determined by sandwiching the upper and lower axes, the means for detecting displacement of the lower axle is unstable. If D2n is obtained, the grinding control based on this can be performed in the same manner as in the first invention.
第１図、第２図は従来のウエノ・−の面取し状態説明図
、第３図は本発明に使用される面取り研削装置の正面図
、第４図はその側面図、第５図は上下動伝達機構の断面
図、第６図は本発明に使用される砥石の側面図、第７図
は面取り位置の制御説明のだめの拡大説明図。
１、ウニ・・−２，上部軸 ３．上部塵 ７．上下動用
パルスモータ 】■、下部軸 １２．下部塵 ２２．砥
石２６、スケール ２７．読取器Figures 1 and 2 are explanatory diagrams of the conventional chamfering state of Ueno--, Figure 3 is a front view of the chamfer grinding device used in the present invention, Figure 4 is its side view, and Figure 5 is FIG. 6 is a side view of the grindstone used in the present invention, and FIG. 7 is an enlarged explanatory view for explaining control of the chamfering position. 1. Sea urchin...-2. Upper axis 3. Upper dust 7. Pulse motor for vertical movement 】■, Lower shaft 12. Bottom dust 22. Grindstone 26, scale 27. reader
Claims (1)
能の上部軸と、下部軸とを有し、ウェハーに対して凹状
砥石をもってウェハーの上下面の面取りを行う研削装置
において、上部軸に押し付けられる１部軸に上下動変位
音測定する検出器と、その検出器の出力によってウェハ
ーの厚さＤ２を算出する演算手段と、■上の座の下面を
基準位置に設定してウェハーを受取る上下部軸の位置制
御。 ■砥石の凹部における上の傾斜面と垂直面との交点（Ｉ
）の高さくＸ）に対して（Ｄ２−Ｓル／２（Ｓはつ工・
・−の垂直端面ＥＦ’の設定された長さ）を加えた位置
に上の座の下面を位置させる制御。、旧ウェハーの上面
面取り位置よりｆ−５（、ｔは砥石の凹部の垂直部分長
さ）間ウェハーを下降させる制御。 以上の１．ｎ、ｆｆｌの制御をやｊう手段とからなるウ
エノ・−面取り研削装置。 （２）ウェハーを保持する上下の座を有して、上下動可
能の上部軸と下部軸とを有し、ウエノ・−に対して凹状
砥石をもってウエノ・−の上下面の面取りを行う研削装
置において、搬入されてくるウェハーの厚さＤ２を測定
する検出装置と、Ｉウエノ・−を受取る上下部軸の位置
制御、■砥石の凹部における上の傾剰面と垂直面との交
点（Ｉ）の高さくＸ）に対して（Ｄ２− Ｓ ）／２
（８はウニ・・−の垂直端面ＥＦの長さ）を加えた位置
に上の座の下面を位置させる制御−■ウニ・・−の上面
面取シ位置よりノー３（ｚは砥石の凹部の垂直長さ）間
ウニ・・−を下降させる制御。 以上のＩ、 ＩＩ、、、、 Ｍｉの制御を行う手段ど
からなるウニ・・−面取り研削装置。[Claims] (11) It has upper and lower seats for holding wafers, has an upper shaft that can move up and down, and a lower shaft, and chamfers the upper and lower surfaces of the wafer with a concave grindstone. In a grinding device, there is a detector that measures the sound of vertical displacement of a shaft that is pressed against the upper shaft, a calculation means that calculates the thickness D2 of the wafer from the output of the detector, and to control the position of the upper and lower axes that receive the wafer. ■The intersection of the upper inclined surface and the vertical surface in the recess of the grinding wheel (I
) for the height of (D2-Sle/2(S)
・Control to position the lower surface of the upper seat at a position where the set length of the vertical end surface EF' of - is added. , control to lower the wafer from the top chamfered position of the old wafer by f-5 (t is the length of the vertical portion of the recess of the grindstone). Above 1. A ueno-chamfer grinding device comprising means for controlling n, ffl. (2) A grinding device that has upper and lower seats for holding the wafer, has an upper shaft and a lower shaft that can move up and down, and chamfers the upper and lower surfaces of the wafer using a concave grindstone. , a detection device that measures the thickness D2 of the incoming wafer, position control of the upper and lower shafts that receive the wafer, and ■ the intersection (I) of the upper inclined surface and the vertical surface in the recess of the grinding wheel. (D2-S)/2 for the height X)
(8 is the length of the vertical end face EF of the sea urchin...-) Control to position the bottom surface of the upper seat at the position where 8 is the length of the vertical end surface EF of the sea urchin... Control to lower the sea urchin... A chamfering grinding device comprising means for controlling the above I, II, . . . Mi.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8502383A JPS59214554A (en) | 1983-05-17 | 1983-05-17 | Beveling grinder for wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8502383A JPS59214554A (en) | 1983-05-17 | 1983-05-17 | Beveling grinder for wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59214554A true JPS59214554A (en) | 1984-12-04 |
Family
ID=13847124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8502383A Pending JPS59214554A (en) | 1983-05-17 | 1983-05-17 | Beveling grinder for wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59214554A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62107979A (en) * | 1985-11-05 | 1987-05-19 | Mitsubishi Metal Corp | Chamfering device for wafer |
| EP0222521A2 (en) * | 1985-11-04 | 1987-05-20 | Silicon Technology Corporation | An automatic edge grinder |
| EP0308134A2 (en) * | 1987-09-14 | 1989-03-22 | Speedfam Co., Ltd. | Specular machining apparatus for peripheral edge portion of wafer |
| US5295331A (en) * | 1991-11-28 | 1994-03-22 | Tokyo Seimitsu Co., Ltd. | Method of chamfering semiconductor wafer |
| EP0665576A2 (en) * | 1994-01-27 | 1995-08-02 | Tokyo Seimitsu Co.,Ltd. | Wafer diameter/sectional shape measuring machine |
| WO1996027479A1 (en) * | 1995-03-07 | 1996-09-12 | Kao Corporation | Chamfer working apparatus for substrate |
| US5769695A (en) * | 1994-11-28 | 1998-06-23 | Tokyo Seimitsu Co., Ltd. | Chamfer grinding system for wafer |
| WO2001073831A1 (en) * | 2000-03-29 | 2001-10-04 | Shin-Etsu Handotai Co., Ltd. | Production method for silicon wafer and soi wafer, and soi wafer |
| US6583029B2 (en) | 2000-03-29 | 2003-06-24 | Shin-Etsu Handotai Co., Ltd. | Production method for silicon wafer and SOI wafer, and SOI wafer |
| CN101714530A (en) * | 2008-10-06 | 2010-05-26 | 日立电线株式会社 | Nitride semiconductor substrate |
| CN113021115A (en) * | 2021-05-26 | 2021-06-25 | 四川上特科技有限公司 | Device for polishing wafer |
-
1983
- 1983-05-17 JP JP8502383A patent/JPS59214554A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0222521A2 (en) * | 1985-11-04 | 1987-05-20 | Silicon Technology Corporation | An automatic edge grinder |
| EP0457364A2 (en) * | 1985-11-04 | 1991-11-21 | Silicon Technology Corporation | Automatic edge grinder |
| JPS62107979A (en) * | 1985-11-05 | 1987-05-19 | Mitsubishi Metal Corp | Chamfering device for wafer |
| EP0308134A2 (en) * | 1987-09-14 | 1989-03-22 | Speedfam Co., Ltd. | Specular machining apparatus for peripheral edge portion of wafer |
| US5295331A (en) * | 1991-11-28 | 1994-03-22 | Tokyo Seimitsu Co., Ltd. | Method of chamfering semiconductor wafer |
| EP0665576A3 (en) * | 1994-01-27 | 1997-05-28 | Tokyo Seimitsu Co Ltd | Wafer diameter/sectional shape measuring machine. |
| EP0665576A2 (en) * | 1994-01-27 | 1995-08-02 | Tokyo Seimitsu Co.,Ltd. | Wafer diameter/sectional shape measuring machine |
| US5769695A (en) * | 1994-11-28 | 1998-06-23 | Tokyo Seimitsu Co., Ltd. | Chamfer grinding system for wafer |
| US5738563A (en) * | 1995-03-07 | 1998-04-14 | Kao Corporation | Substrate chamfering machine |
| WO1996027479A1 (en) * | 1995-03-07 | 1996-09-12 | Kao Corporation | Chamfer working apparatus for substrate |
| WO2001073831A1 (en) * | 2000-03-29 | 2001-10-04 | Shin-Etsu Handotai Co., Ltd. | Production method for silicon wafer and soi wafer, and soi wafer |
| US6583029B2 (en) | 2000-03-29 | 2003-06-24 | Shin-Etsu Handotai Co., Ltd. | Production method for silicon wafer and SOI wafer, and SOI wafer |
| CN101714530A (en) * | 2008-10-06 | 2010-05-26 | 日立电线株式会社 | Nitride semiconductor substrate |
| CN113021115A (en) * | 2021-05-26 | 2021-06-25 | 四川上特科技有限公司 | Device for polishing wafer |
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