JPS5921316B2 - Current recording material - Google Patents

Current recording material

Info

Publication number
JPS5921316B2
JPS5921316B2 JP54003300A JP330079A JPS5921316B2 JP S5921316 B2 JPS5921316 B2 JP S5921316B2 JP 54003300 A JP54003300 A JP 54003300A JP 330079 A JP330079 A JP 330079A JP S5921316 B2 JPS5921316 B2 JP S5921316B2
Authority
JP
Japan
Prior art keywords
resin layer
recording material
surface resistance
metal
recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54003300A
Other languages
Japanese (ja)
Other versions
JPS5595594A (en
Inventor
司郎 中野
芳郎 内藤
栄基 仲村
敏真 池名
一夫 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP54003300A priority Critical patent/JPS5921316B2/en
Priority to US06/062,576 priority patent/US4308314A/en
Priority to EP79301549A priority patent/EP0008198B1/en
Priority to DE7979301549T priority patent/DE2967694D1/en
Priority to AU49463/79A priority patent/AU524875B2/en
Priority to CA000333112A priority patent/CA1136692A/en
Publication of JPS5595594A publication Critical patent/JPS5595594A/en
Priority to US06/280,552 priority patent/US4358474A/en
Publication of JPS5921316B2 publication Critical patent/JPS5921316B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は通電により転写記録することができる記録材料
に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a recording material that can be transferred and recorded by energization.

近年、情報が著るしく豊富となり、その情報の迅速な伝
達、記録等の必要性が高まり、情報処理システム、情報
伝達システム及び情報記録システム等の情報管理システ
ムに関し、種々の開発がなされている。
In recent years, information has become extremely abundant, and the need for prompt transmission and recording of that information has increased, and various developments have been made regarding information management systems such as information processing systems, information transmission systems, and information recording systems. .

そして上記システムに適合する記録材料として感熱記録
材料、放電記録材料等が提供されている。しかしながら
感熱記録材料は、記録材料のシート中に発色剤と発色助
剤の両方を含有しているため、衝撃とか圧力が不用意に
加えられると発色する恐れがあり又長期間保存しておく
と次第に発色するという欠点を有している。又放電記録
材料は放電により結着剤を破壊して記録されるので、記
録の際に悪臭や煤が発生するという欠点を有している。
本発明の目的は長期間保存しても、又保存中に衝撃や圧
力が加えられても発色せず、記録の際に悪臭や煤が発生
することなしに記録することができる通電記録材料を提
供することにある。
Heat-sensitive recording materials, discharge recording materials, and the like are provided as recording materials compatible with the above-mentioned system. However, heat-sensitive recording materials contain both a coloring agent and a coloring aid in the sheet of recording material, so there is a risk of coloring if shock or pressure is applied carelessly, and if stored for a long time. It has the disadvantage of gradually developing color. Furthermore, discharge recording materials have the disadvantage that they produce bad odors and soot during recording because the binder is destroyed by discharge.
The purpose of the present invention is to provide an electrically conductive recording material that does not develop color even when stored for a long period of time or when subjected to impact or pressure during storage, and that can record without producing bad odor or soot during recording. It is about providing.

即ち本発明の要旨は(4)樹脂マトリツクスに導電性付
与剤と低融点樹脂の微粉末が分散されてなり、表面抵抗
が1Ωより大にして105Ωより小であつて、通電記録
する際に通電破壊され転写される半導電性樹脂層、(B
顧半導電性樹脂層の一面に積層せしめられた、樹脂マト
リツクスと金属粉末とよりなり、該金属粉末が5〜60
体積%を占めかつ表面抵抗が105〜1016Ωであつ
て、通電記録する際に放電破壊されない金属含有樹脂層
及び(0前記半導電性樹脂層の他面に積層せしめられた
表面抵抗が104Ω以下であつてかつ前記半導電性樹脂
層の表面抵抗より小であり、通電記録する際に通電破壊
され転写される導電性層からなる通電記録材料に存する
That is, the gist of the present invention is (4) a resin matrix in which a conductivity imparting agent and a fine powder of a low melting point resin are dispersed, the surface resistance is greater than 1 Ω and less than 10 5 Ω, and the material is energized when recording electricity. The semiconductive resin layer that is destroyed and transferred, (B
It consists of a resin matrix and metal powder, which are laminated on one side of a semi-conductive resin layer, and the metal powder has a density of 5 to 60
A metal-containing resin layer that occupies a volume % and has a surface resistance of 10 5 to 10 16 Ω and is not destroyed by discharge during electrical recording; It exists in a current-carrying recording material consisting of a conductive layer that has a surface resistance that is higher than the surface resistance of the semiconductive resin layer, and is destroyed and transferred during current-carrying recording.

本発明において用いられる樹脂マトリツクスはフイルム
形成能を有しかつ電気絶縁性を有していればよく、熱可
塑性樹脂が好適に使用される。
The resin matrix used in the present invention only needs to have film-forming ability and electrical insulation properties, and thermoplastic resins are preferably used.

上記熱可塑性樹脂としては、金属粉末、導電性付与剤等
に対する結着力が大きく、シート又はフイルム状に成形
した時の機械的強度が大きく、可撓性がありかつ腰の強
いものが望ましく、例えばポリエチレン、ポリプロピレ
ン、ポリ塩化ビニル、ポリ酢酸ビニル、エチレン一酢酸
ビニル共重合体、塩化ビニル一酢酸ビニル共重合体、ポ
リスチレン、ポリアクリロニトリル、ポリビニルアセタ
ール、ポリアクリル酸アルキルエステル、ポリメタクリ
ル酸アルキルエステル、ポリエステル、酢酸セルカース
、ポリビニルアルコール、カルボキシメチルセルロース
、ゼラチン等があげられ、ポリエチレン、ポリ塩化ビニ
ル、塩化ビニル−エチレン共重合体、塩化ビニル一酢酸
ビニル共重合体、ポリビニルアセタール、酢酸セルロー
スが好適に使用される。そして金属含有樹脂層、半導電
性樹脂層及び導電性層のそれぞれの層を形成する樹脂マ
トリツクスは同種のものであつてもよいし異種のもので
あつてもよい。
The above-mentioned thermoplastic resin is desirably one that has a high binding power to metal powder, a conductivity imparting agent, etc., has high mechanical strength when molded into a sheet or film, is flexible, and has strong stiffness, such as Polyethylene, polypropylene, polyvinyl chloride, polyvinyl acetate, ethylene monovinyl acetate copolymer, vinyl chloride monovinyl acetate copolymer, polystyrene, polyacrylonitrile, polyvinyl acetal, polyacrylic acid alkyl ester, polymethacrylic acid alkyl ester, polyester , acetic acid cellulose, polyvinyl alcohol, carboxymethyl cellulose, gelatin, etc., and polyethylene, polyvinyl chloride, vinyl chloride-ethylene copolymer, vinyl chloride monovinyl acetate copolymer, polyvinyl acetal, and cellulose acetate are preferably used. . The resin matrices forming each of the metal-containing resin layer, semiconductive resin layer, and conductive layer may be of the same kind or of different kinds.

本発明において用いられる導電性付与剤は導電性を有し
ていればよく、たとえばカーボンブラツク、グラフアイ
ト、ゼオライト、酸化亜釘、酸化第2錫、メタ錫酸、ヨ
ウ化第1銅、還元酸化チタン、酸化第2鉄、炭化ケイ素
等が好適に使用される。
The conductivity imparting agent used in the present invention may have conductivity, such as carbon black, graphite, zeolite, zinc oxide, stannic oxide, metastannic acid, cuprous iodide, reduced oxidation Titanium, ferric oxide, silicon carbide, etc. are preferably used.

又銅、アルミニウム、錫、モリブデン、銀等の金属粉末
も好適に使用される。そして導電性付与剤の粒子径は小
さくかつ粒径の揃つたものが良く、好ましくは平均粒子
径が10ミクロン以下のものである。本発明において用
いられる低融点樹脂とは融点が低く通電記録材料となさ
れ、通電された際に、通電された電気の抵抗熱によつて
加熱され溶解されると共に周囲の導電性付与剤、着色材
等と通電破壊され記録紙に転写される樹脂であつて融点
は30〜100℃のものが好ましい。
Metal powders such as copper, aluminum, tin, molybdenum, and silver are also preferably used. The particle size of the conductivity imparting agent is preferably small and uniform, and preferably has an average particle size of 10 microns or less. The low melting point resin used in the present invention has a low melting point and is used as a current recording material, and when energized, it is heated and melted by the resistance heat of the energized electricity, and the surrounding conductivity imparting agent and coloring material are It is preferable to use a resin which is destroyed by electric current and transferred to recording paper and has a melting point of 30 to 100°C.

又その微粉末は粒径は小さい方が好ましく50μ以下で
あるのが好ましい。上記低融点樹脂としては、たとえば
低分子量のポリプロピレン、ポリエチレン、エチレン一
酢酸ビニル共重合体、ポリエチレングリコール、ポリプ
ロピレングリコール等のほかろう、マイクロクリスタル
ワツクスなどがあげられる。
Further, the particle size of the fine powder is preferably small, preferably 50 μm or less. Examples of the low melting point resin include low molecular weight polypropylene, polyethylene, ethylene monovinyl acetate copolymer, polyethylene glycol, polypropylene glycol, wax, microcrystal wax, and the like.

本発明において半導電性樹脂層は、通電記録する際に通
電破壊され転写される層であつて、前記樹脂マトリツク
スに前記導電性付与剤と前記低融点樹脂の微粉末が分散
されて形成される。
In the present invention, the semiconductive resin layer is a layer that is destroyed and transferred by electrical current during recording, and is formed by dispersing the conductivity imparting agent and the fine powder of the low melting point resin in the resin matrix. .

そして前記導電性付与剤と低融点樹脂の添加量は特に限
定されるものではなく半導電性樹脂層の表面抵抗が1Ω
より大にして105Ωより小になるように決定されれば
よいが、前記樹脂マトリツクス100重量部に対し前記
導電性付与剤は1〜1000重量部、前記低融点樹脂は
100〜500重量部添加されるのが好ましい。上記半
導電性樹脂層の厚みは特に限定されるものではないが、
2〜50μになされるのが好ましい0又上記半導電性樹
脂層の形成方法も特に限定されるものではなく公知の任
意の方法が採用されてよいが、前記樹脂マトリツクスは
溶解するが前記低融点樹脂は溶解しないかあるいはほと
んど溶解しない溶剤に前記樹脂マトリツクスと前記導電
性付与剤と前記低融点樹脂の微粉末を溶解分散してキヤ
ステイング法によつて形成するのが好ましい。
The amount of the conductivity imparting agent and low melting point resin added is not particularly limited, and the surface resistance of the semiconductive resin layer is 1Ω.
The conductivity imparting agent may be added in an amount of 1 to 1000 parts by weight, and the low melting point resin may be added in an amount of 100 to 500 parts by weight to 100 parts by weight of the resin matrix. It is preferable to The thickness of the semiconductive resin layer is not particularly limited, but
The method for forming the semiconductive resin layer is not particularly limited, and any known method may be adopted, but the resin matrix is soluble but has a low melting point. It is preferable that the resin matrix, the conductivity imparting agent, and the fine powder of the low melting point resin are dissolved and dispersed in a solvent in which the resin does not dissolve or hardly dissolves, and is formed by a casting method.

又上記半導電性樹脂層の低融点樹脂は本発明の通電記録
材料となされ通電記録された際に溶解されると共に、周
囲の導電性付与剤等と記録紙に転写されるのであるから
着色材が添加されてもよい。即ち黒色の画像を得たい時
には導電性付与剤としてカーボンブラツクを用いればよ
く、導電性付与剤として酸化亜鉛、酸化第2錫の如き色
の濃くないものを使用し、着色材を添加すれば有色の画
像が得られる。上記着色材としては公知の任意のものが
使用でき、たとえばニツケルイエロ一、チタンイエロ一
、カドミウムレツド、ナフトールイエロ一、パーマネッ
トオレンジ、クリスタルバイオレツト、マラカイトグリ
ーン等があげられ、その添加量は記録された際の色、濃
度等により任意に定めればよい。
Furthermore, the low melting point resin of the semiconductive resin layer is used as the current recording material of the present invention, and is dissolved during current recording, and is transferred to the recording paper together with the surrounding conductivity imparting agent, etc. Therefore, it is a coloring material. may be added. In other words, if you want to obtain a black image, you can use carbon black as a conductivity imparting agent, or you can use a non-dark colored conductivity imparting agent such as zinc oxide or stannic oxide, and add a coloring agent to create a colored image. images are obtained. Any known colorant can be used as the colorant, such as nickel yellow, titanium yellow, cadmium red, naphthol yellow, permanet orange, crystal violet, malachite green, etc., and the amount added is recorded. It may be arbitrarily determined based on the color, density, etc.

なお上記着色材が導電性を有する際には上記半導電性樹
脂層の表面抵抗に注意する必要がある。又上記半導電性
樹脂層にさらに無機充填材が添加されてもよい。上記無
機充填材としてはたとえば酸化カルシウム、酸化マグネ
シウム、炭酸カリウム、炭酸ナトリウム、炭酸カルシウ
ム、炭酸ストロンチウム、酸化チタン、硫酸バリウム、
リトボン、塩基性炭酸マグネシウム、シリカ、クレー等
があげられる。
Note that when the coloring material has conductivity, it is necessary to pay attention to the surface resistance of the semiconductive resin layer. Further, an inorganic filler may be further added to the semiconductive resin layer. Examples of the above-mentioned inorganic fillers include calcium oxide, magnesium oxide, potassium carbonate, sodium carbonate, calcium carbonate, strontium carbonate, titanium oxide, barium sulfate,
Examples include litobone, basic magnesium carbonate, silica, and clay.

又該無機充填材の粒径は均一であつて、平均粒径は0.
05〜10μのものが好ましく、より好ましくは0.1
〜3.0μであり、その添加量は樹脂マトリツクス10
0重量部に対し10〜1000重量部添加されるのが好
ましい。なお上記無機充填材が導電性を有する際には上
記半導電性樹脂層の表面抵抗が1Ωより大であつて10
6Ωより小であるように注意する必要がある。本発明に
おいて金属含有樹脂層は前記半導電性樹脂層の一面に積
層された、前記樹脂マトリツクスと金属粉末とよりなり
、通電記録する際に通電破壊されない層である。
Further, the particle size of the inorganic filler is uniform, and the average particle size is 0.
05 to 10μ is preferable, more preferably 0.1
~3.0μ, and the amount added is 10μ
It is preferable to add 10 to 1000 parts by weight per 0 parts by weight. When the inorganic filler has conductivity, the surface resistance of the semiconductive resin layer is greater than 1Ω.
Care must be taken to ensure that the resistance is less than 6Ω. In the present invention, the metal-containing resin layer is laminated on one surface of the semiconductive resin layer and is made of the resin matrix and metal powder, and is a layer that is not destroyed by electrical current during recording.

上記金属粉末とは粉末状になされた金属を意味し、該粉
末は導電性を有することが必要である。
The above-mentioned metal powder means a metal made into powder, and the powder needs to have electrical conductivity.

そして良導電性金属の粉末を用いるのが好ましく、好適
な金属粉末の具体例としてはたとえば銅、アルミニウム
、鉄、錫、亜鉛、ニツケル、モリブデン、銀、青銅、黄
銅等の粉末があげられる。又、他の金属でコーテイング
された金属粉末も用いることが出来、例えば銀でコーテ
イングされた銅粉末等が用いられる。そして上記の金属
粉末のうち銅、亜鉛、鉄がより好適に用いられる。又金
属粉末の粒形は樹脂状、球状若しくは塊状のものが好ま
しく、粒子径は小さくかつ粒径の揃つたものが良く、平
均粒子径が0.2〜20ミクロンのものが好ましく、よ
り好ましくは0.5〜10ミクカンである。本発明にお
いては上記金属粉末の中から必要に応じて一種又は二種
以上の金属粉末が選択使用されてよい。
It is preferable to use a powder of a highly conductive metal, and specific examples of suitable metal powders include powders of copper, aluminum, iron, tin, zinc, nickel, molybdenum, silver, bronze, brass, and the like. Further, metal powder coated with other metals can also be used, such as copper powder coated with silver. Among the metal powders mentioned above, copper, zinc, and iron are more preferably used. The particle shape of the metal powder is preferably resin-like, spherical or lumpy, and the particle size is preferably small and uniform, with an average particle size of 0.2 to 20 microns being preferred, and more preferably It is 0.5 to 10 mikukan. In the present invention, one or more kinds of metal powders may be selected and used from among the above-mentioned metal powders as necessary.

又、その添加量は、添加量が少なすぎると導電性が小さ
くなり、逆に添加量が多すぎると、導電性が良くなりす
ぎて記録針から与えられた電流が拡散してしまい記録針
直下へながれにくくなりひいては記録の精度が低下する
ため、金属含有樹脂層の5〜60体積%になるようかつ
表面抵抗が106〜1016Qになるよう決定されるの
であり、好ましくは109〜1014Ωである。上記金
属含有樹脂層の厚みは特に限定されるものではないが5
〜50μであるのが好ましい。又上記金属含有樹脂層の
形成方法も公知の任意の方法が採用されてよく、たとえ
ば溶液流延法、カレンダー法、押出し法等が採用される
。上記金属含有樹脂層は通電記録材料となされ、通電記
録する際には通電記録針に当接されて通電記録されるの
で、該金属含有樹脂層がひび割れ等をおこす恐れをなく
し、保存性を改良し、構成物質が記録針に付着すること
を防止し、さらに該層の成形性を向上するために可塑剤
、充填材、滑剤、安定剤、抗酸化剤、難燃剤等が添加さ
れてもよい。
Also, if the amount added is too small, the conductivity will be low, and conversely, if the amount added is too large, the conductivity will be too good and the current applied from the recording needle will be diffused, causing it to drop directly below the recording needle. Since it becomes difficult to bend and the accuracy of recording decreases, the surface resistance is determined to be 5 to 60% by volume of the metal-containing resin layer and to be 10 6 to 10 16 Q, preferably 10 9 to 10 14 Ω. The thickness of the metal-containing resin layer is not particularly limited, but 5
It is preferable that it is 50μ. Further, any known method may be used to form the metal-containing resin layer, such as a solution casting method, a calender method, an extrusion method, etc. The above-mentioned metal-containing resin layer is used as a current-carrying recording material, and when conducting current-carrying recording, it is brought into contact with a current-carrying recording needle to record the current-carrying data, so the metal-containing resin layer eliminates the risk of cracking, etc., and improves storage stability. However, plasticizers, fillers, lubricants, stabilizers, antioxidants, flame retardants, etc. may be added to prevent the constituent substances from adhering to the recording needle and further improve the formability of the layer. .

本発明において導電性層は前記半導電性樹脂層の他面に
積層される層であり、その表面抵抗は104Ω以下にな
されかつ前記半導電性樹脂層の表面抵抗より小になされ
、通電記録する際に通電破壊され転写される。
In the present invention, the conductive layer is a layer laminated on the other surface of the semiconductive resin layer, and has a surface resistance of 104 Ω or less and smaller than the surface resistance of the semiconductive resin layer, and is capable of recording electricity. When it is energized, it is destroyed and transferred.

前記半導電性樹脂層と導電性樹脂層の表面抵抗の差が小
さいと通電記録された際に記録性が低下する傾向にある
ので前記半導電性樹脂層の表面抵抗と導電性層の表面抵
抗の比は10〜104であるのが好ましい。そして該導
電性層は前記樹脂マトリツクス申に前記導電性付与剤が
分散されて形成されてもよいし又は金属薄膜で形成され
ても良いが、金属薄膜は非常に薄くできるのでより好ま
しい。金属薄膜の厚みは薄すぎると表面抵抗が104Ω
より大きくなり、逆に厚すぎると通電記録できなくなる
ので40〜5000オングストロームであるのがよく、
好ましくは100〜3000オングストロームであり、
より好ましくは200〜2000オングストロームであ
る。そして金属としてはたとえばアルミニウム、銀、金
、銅、亜鉛、錫、ニツケル、モリブデン等が使用され、
アルミニウム、銀、金が好ましい。上記導電性層を金属
薄膜で形成する方法は公知の任意の方法が採用されてよ
く、たとえば真空蒸着法、イオンスパツタリング法等が
採用される。又前記樹脂マトリツクス中に前記導電性付
与剤が分散されて形成される際には、公知の任意の方法
で形成されてよく、層の厚みは2−30μになされるの
が好ましい。又該層に前記無機充填材、低融点樹脂、着
色材等が添加されてもよい。本発明の通電記録材料の構
成は上述の通りであり、該通電記録材料を通電記録装置
に供給し、金属含有樹脂層上に通電記録針を当接し、導
電性層の下に紙、プラスチツクフイルム等の記録紙を当
接して通電記録すると通電記録針直下の金属含有樹脂層
及び半導電性樹脂層において熱が発生し、発生した熱に
より低融点樹脂は溶解し、周囲の導電性付与剤等と共に
通電破壊され、記録紙に転写されて記録されるのである
。この際通電する電気の電圧は数V〜数+Vという低電
圧で記録することが可能である。又本発明の通電記録材
料の構成は上述の通りであるから保存中や輸送中に発色
する恐れもなく通電記録の際に悪臭や煤の発生が全くな
いのである。
If the difference in surface resistance between the semiconductive resin layer and the conductive resin layer is small, recording performance tends to decrease when current is applied. The ratio is preferably 10 to 104. The conductive layer may be formed by dispersing the conductivity imparting agent in the resin matrix, or may be formed from a metal thin film, but a metal thin film is more preferred since it can be made very thin. If the thickness of the metal thin film is too thin, the surface resistance will be 104Ω.
On the other hand, if it is too thick, current recording will not be possible, so it is best to have a thickness of 40 to 5000 angstroms.
Preferably it is 100 to 3000 angstroms,
More preferably, it is 200 to 2000 angstroms. Examples of metals used include aluminum, silver, gold, copper, zinc, tin, nickel, and molybdenum.
Aluminum, silver and gold are preferred. Any known method may be used to form the conductive layer as a metal thin film, such as a vacuum evaporation method, an ion sputtering method, or the like. Further, when the conductivity imparting agent is dispersed in the resin matrix and formed, it may be formed by any known method, and the layer thickness is preferably 2 to 30 microns. Further, the above-mentioned inorganic filler, low melting point resin, coloring material, etc. may be added to the layer. The structure of the current-carrying recording material of the present invention is as described above. The current-carrying recording material is supplied to a current-carrying recording device, a current-carrying recording needle is brought into contact with the metal-containing resin layer, and paper or plastic film is placed under the conductive layer. When a recording paper such as the like is brought into contact with electricity and recorded, heat is generated in the metal-containing resin layer and the semiconductive resin layer directly under the electricity-carrying recording needle, and the generated heat melts the low melting point resin, and the surrounding conductivity imparting agent, etc. At the same time, it is destroyed by electricity, and is transferred and recorded on recording paper. At this time, it is possible to record at a low voltage of several volts to several + volts. Furthermore, since the structure of the energization recording material of the present invention is as described above, there is no fear of color development during storage or transportation, and no foul odor or soot is generated during energization recording.

従つて本発明の通電記録材料はフアクシミリや各種計測
器、記録計、コンピユータ一における記録表示等に好適
に使用されるのである。次に本発明の実施例について説
明する。
Therefore, the current-carrying recording material of the present invention is suitably used for recording and displaying in facsimiles, various measuring instruments, recorders, computers, and the like. Next, examples of the present invention will be described.

以下単に[部」とあるのは「重量部」を意味する。実施
例―VVHS 上記組成からなる配合物を溶解分散せしめ、ガラス板上
に流延し、乾燥して、厚さ20μの金属含有樹脂シート
を得た。
Hereinafter, the term "parts" simply means "parts by weight." Example - VVHS A blend having the above composition was dissolved and dispersed, cast on a glass plate, and dried to obtain a metal-containing resin sheet with a thickness of 20 μm.

電解銅粉末はシート中16.9体積%であつた。又該シ
ートの表面抵抗は0.8X1013Ωであつた。次に上
記組成からなる配合物を溶解分散せしめ、上記シート上
に塗布乾燥して厚さ10μの半導電性樹脂層を形成し、
30μの厚さの複合シートを得た。
The electrolytic copper powder was 16.9% by volume in the sheet. Moreover, the surface resistance of the sheet was 0.8×10 13 Ω. Next, a compound having the above composition is dissolved and dispersed, applied and dried on the above sheet to form a semiconductive resin layer with a thickness of 10 μm,
A composite sheet with a thickness of 30μ was obtained.

該半導電性樹脂層の表面抵抗は1.0×103Ωであつ
た。次に上記複合シートの半導電性樹脂層に3X104
T0rrの条件で金を真空蒸着し、厚さ400オングス
トロームの導電性層を形成し通電記録材料を得た。
The surface resistance of the semiconductive resin layer was 1.0×10 3 Ω. Next, apply 3X104 to the semiconductive resin layer of the composite sheet.
Gold was vacuum-deposited under conditions of T0rr to form a conductive layer with a thickness of 400 angstroms to obtain a current-carrying recording material.

Claims (1)

【特許請求の範囲】 1 (A)樹脂マトリックスに導電性付与剤と低融点樹
脂の微粉末が分散されてなり、表面抵抗が1Ωより大に
して10^5Ωより小であつて、通電記録する際に通電
破壊され転写される半導電性樹脂層;(B)該半導電性
樹脂層の一面に積層せしめられた、樹脂マトリックスと
金属粉末とよりなり、該金属粉末が5〜60体積%を占
め、かつ表面抵抗が10^5〜10^1^6Ωであつて
、通電記録する際に通電破壊されない金属含有樹脂層及
び(C)前記半導電性樹脂層の他面に積層せしめられた
、表面抵抗が10^4Ω以下であつて、かつ前記半導電
性樹脂層の表面抵抗より小であり、通電記録する際に通
電破壊され転写される導電性層からなる通電記録材料。 2 導電性付与剤がカーボンブラックである特許請求の
範囲第1項記載の通電記録材料。 3 低融点樹脂の融点が30〜100℃である特許請求
の範囲第1項記載の通電記録材料。 4 低融点樹脂の添加量が樹脂マトリックス100重量
部に対して100〜500重量部である特許請求の範囲
第1項記載の通電記録材料。 5 金属粉末の平均粒径が0.2〜20μである特許請
求の範囲第1項記載の通電記録材料。 6 金属含有樹脂層の表面抵抗が10^9〜10^1^
4Ωである特許請求の範囲第1項記載の通電記録材料。 7 導電性層が金属蒸着膜である特許請求の範囲第1項
記載の通電記録材料。 8 半導電性樹脂層の表面抵抗と導電性層の表面抵抗の
比が10〜10^4である特許請求の範囲第1項記載の
通電記録材料。
[Claims] 1 (A) A resin matrix in which a conductivity imparting agent and a fine powder of a low melting point resin are dispersed, a surface resistance of more than 1Ω and less than 10^5Ω, and capable of recording electricity. (B) A semiconductive resin layer that is destroyed and transferred when electrically applied; (C) a metal-containing resin layer having a surface resistance of 10^5 to 10^1^6 Ω and not being destroyed by electrical current during electrical recording; and (C) a metal-containing resin layer laminated on the other surface of the semiconductive resin layer. A current-carrying recording material comprising a conductive layer having a surface resistance of 10^4 Ω or less and smaller than the surface resistance of the semiconductive resin layer, which is destroyed and transferred during current-carrying recording. 2. The electrically conductive recording material according to claim 1, wherein the conductivity imparting agent is carbon black. 3. The electrically conductive recording material according to claim 1, wherein the low melting point resin has a melting point of 30 to 100°C. 4. The electrically conductive recording material according to claim 1, wherein the amount of the low melting point resin added is 100 to 500 parts by weight based on 100 parts by weight of the resin matrix. 5. The electrically conductive recording material according to claim 1, wherein the metal powder has an average particle size of 0.2 to 20 μm. 6 The surface resistance of the metal-containing resin layer is 10^9 to 10^1^
The current-carrying recording material according to claim 1, which has a resistance of 4Ω. 7. The electrically conductive recording material according to claim 1, wherein the conductive layer is a metal vapor deposited film. 8. The current-carrying recording material according to claim 1, wherein the ratio of the surface resistance of the semiconductive resin layer to the surface resistance of the conductive layer is 10 to 10^4.
JP54003300A 1978-08-04 1979-01-12 Current recording material Expired JPS5921316B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP54003300A JPS5921316B2 (en) 1979-01-12 1979-01-12 Current recording material
US06/062,576 US4308314A (en) 1978-08-04 1979-07-31 Electric recording material
EP79301549A EP0008198B1 (en) 1978-08-04 1979-08-01 Electric recording material and method of electric recording
DE7979301549T DE2967694D1 (en) 1978-08-04 1979-08-01 Electric recording material and method of electric recording
AU49463/79A AU524875B2 (en) 1978-08-04 1979-08-01 Electric recording material
CA000333112A CA1136692A (en) 1978-08-04 1979-08-03 Electric recording material and method for electric recording
US06/280,552 US4358474A (en) 1978-08-04 1981-07-02 Method for electric recording

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54003300A JPS5921316B2 (en) 1979-01-12 1979-01-12 Current recording material

Publications (2)

Publication Number Publication Date
JPS5595594A JPS5595594A (en) 1980-07-19
JPS5921316B2 true JPS5921316B2 (en) 1984-05-18

Family

ID=11553512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54003300A Expired JPS5921316B2 (en) 1978-08-04 1979-01-12 Current recording material

Country Status (1)

Country Link
JP (1) JPS5921316B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931190A (en) * 1982-08-12 1984-02-20 Sekisui Chem Co Ltd Current conducting type transfer recording material
JPS6049992A (en) * 1983-08-29 1985-03-19 Sekisui Chem Co Ltd Electric discharge thermal transfer recording material
JPS6184286A (en) * 1984-10-02 1986-04-28 Matsushita Electric Ind Co Ltd Transfer mask sheet

Also Published As

Publication number Publication date
JPS5595594A (en) 1980-07-19

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