JPS59211564A - Chemical copper plating solution - Google Patents

Chemical copper plating solution

Info

Publication number
JPS59211564A
JPS59211564A JP8492283A JP8492283A JPS59211564A JP S59211564 A JPS59211564 A JP S59211564A JP 8492283 A JP8492283 A JP 8492283A JP 8492283 A JP8492283 A JP 8492283A JP S59211564 A JPS59211564 A JP S59211564A
Authority
JP
Japan
Prior art keywords
copper plating
agent
general formula
copper
chemical copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8492283A
Other languages
Japanese (ja)
Inventor
Osamu Sasaki
修 佐々木
Yoshihito Kobayashi
嘉仁 小林
Kunihiro Isori
五十里 邦弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP8492283A priority Critical patent/JPS59211564A/en
Publication of JPS59211564A publication Critical patent/JPS59211564A/en
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/38Coating with copper
    • C23C18/40Coating with copper using reducing agents

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)

Abstract

PURPOSE:To permit high speed deposition of a copper plating film and to improve the ductility of the plating film by adding a proper amt. of specific cuprous ion complexing agent and nonionic surface active agent to a chemical copper plating soln. contg. a copper salt, cupric ion complexing agent, reducing agent and a pH adjusting agent. CONSTITUTION:1-200mg/l At least one kind among the cuprous ion complexing agents expressed by the formulas ( I ), (II), (III) and 10mg/l-5g/l at least one kind among the nonionic surface active agents expressed by the formulas (IV), (V), (VI) are added to a soln. contg. a copper salt such as copper sulfate, cupric ion complexing agent, paraform aldehyde as a copper ion reducing agent, NaOH as a pH adjusting agent, etc. as a chemical copper plating soln. The chemical copper plating soln. is used at 50-80 deg.C and 10.8-13.0pH, by which a copper plating film having excellent ductility is chemically plated at a high rate of deposition on the surface of a material to be plated.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は化学銅めっき液に関し、更に詳しくは、高速析
出が可能、かつ機械的特性と9わけ延展性に優れためつ
き皮膜が形成できる新規な組成のイヒ学銅めっき液に関
する。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a chemical copper plating solution, and more particularly to a novel chemical copper plating solution that is capable of high-speed deposition and that can form a matted film with excellent mechanical properties and spreadability. Regarding the composition of Ihigaku copper plating solution.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

化学銅めっき液は、通常、硫酸鋼、硝酸銅、塩化第2銅
などの第2銅塩;エチレンソアミン四酢酸、N、N、N
’、N’−テトラキス=(2−ヒドロキシプロピル)−
エチレンソアミン、ロツセル塩のような錯化剤;ホルム
アルデヒド、ジメチルアミンボラン、ナトリウムボロノ
ーイドライドのような還元剤および水酸化す) IJウ
ム、水酸化力1ノウムなどのP)I v7!I整剤を含
む。
Chemical copper plating solutions usually include cupric salts such as steel sulfate, copper nitrate, and cupric chloride; ethylenesoaminetetraacetic acid, N, N, N
',N'-tetrakis=(2-hydroxypropyl)-
complexing agents such as ethylenesoamine, Rothsell's salt; reducing agents such as formaldehyde, dimethylamine borane, sodium boronoylide; Contains anti-inflammatory drugs.

しかしながら、これらの成分のみからなる組成の化学!
111Jめっき液から得られためつき皮膜は一般に脆く
、実用に供するには機械的特性とくに延展性が不充分で
ある。例えば、印刷配線板の’yh電回路部を化学銅め
っきによって形成するいわゆるアディティブ法を適用し
た印刷配線板の製造においては、印刷配線板の加工や環
境変化による熱的応力や物理的衝撃に起因して回路断線
が生じ易い。
However, the chemistry of the composition consists only of these ingredients!
The matted film obtained from the 111J plating solution is generally brittle and has insufficient mechanical properties, especially spreadability, for practical use. For example, in manufacturing printed wiring boards using the so-called additive method in which the 'yh electric circuit part of the printed wiring board is formed by chemical copper plating, thermal stress and physical shock due to processing of the printed wiring board and environmental changes may occur. circuit breakage is likely to occur.

上記欠点を改良するために、銅塩、錯化剤、還元剤、p
HRI7a整剤からなる組成の化学銅めっき液に、ポリ
エチレングリコール、ソビリヅル類、フェナントロリン
類あるいは水溶性シアン化物をさらに添加することによ
って、化学銅めっき皮膜の延展性の向上を図ることが試
みられている。
In order to improve the above drawbacks, copper salts, complexing agents, reducing agents, p
Attempts have been made to improve the spreadability of the chemical copper plating film by further adding polyethylene glycol, phenanthrolines, or water-soluble cyanides to the chemical copper plating solution having the composition of HRI7a conditioning agent. .

しかしながら、上記した成分を添加しても化学銅めっき
皮膜の延展性はわずかじか向上せず、該めっき皮膜の機
械的特性に1:、例えば印刷配線板の通電回路を形成す
る銅皮膜として実用に但し得る址でには至っていない。
However, even if the above-mentioned components are added, the spreadability of the chemical copper plating film is only slightly improved, and the mechanical properties of the plating film are 1:1. However, we have not yet reached the point where it is possible.

しかも、これら追加成分を添加した場合には、めっきの
析出速度が遅くなり生産性が低下するという問題を不可
避的に生じていた。
Moreover, when these additional components are added, the problem that the deposition rate of plating becomes slow and productivity is reduced inevitably occurs.

〔発明の目的〕[Purpose of the invention]

本発明に11、めつキ畠速析出が可能で、かつ、機械的
特性、とりわけ、延展性に侵れた銅めっき皮膜を与える
新規な組成の鋲めつき液の提供を目的とする。
11. It is an object of the present invention to provide a tack plating solution having a novel composition that enables rapid plating deposition and provides a copper plating film with improved mechanical properties, especially ductility.

〔発明の概要〕[Summary of the invention]

本発明の化学銅めっき液は、銅塩、第2錐イオン銘化剤
、還元剤及びpH調整剤を含有する化学tMめつき液に
おいて、更に、 一般式(■): (式中、R1,R2は同じであっても異なっていてもよ
く、それぞれ、水素原子、フェニル基、置換フェニル基
を表わす。) で示される第1銅イオン鉛化剤; 一般式(■); (式中、R8,R’ 、Rr′、R’は同じテチッテも
異なっていてもよく、それぞれ、水素原子、炭素、Gl
〜4のアルキル基を表わす。) で示される第1銅イオン錯化剤; 一般式Q11) : (式中、R’、R8は同じであっても異なっていてもよ
く、それぞれ、水素原子若しくはR7とR8が一緒にな
って芳香族環又は置換芳香族環を形成していてもよにR
”、R″′は同じであっても異なっていてもよく、それ
ぞれ、炭素数1〜4のアルキル基を表わす。) で示される第1銅イオン鉛化剤; の群から選ばれる少なくとも1種の第1銅イオン錯化剤
、並びに、 一般式(財): (式中、mlは1以上の整数を表わす。)で示される非
イオン系界面活性剤; 一般式(V): (式中、m2.nlはそれぞれ1以上の整数を表わす。
The chemical copper plating solution of the present invention is a chemical tM plating solution containing a copper salt, a second pyramidal ion marking agent, a reducing agent, and a pH adjuster, and further comprises the general formula (■): (wherein R1, R2 may be the same or different and each represents a hydrogen atom, a phenyl group, or a substituted phenyl group.) A cuprous ion leading agent represented by the general formula (■); (wherein, R8 , R', Rr', and R' may be the same or different, and each represents a hydrogen atom, carbon, Gl
~4 alkyl group. ) A cuprous ion complexing agent represented by the general formula Q11): (wherein, R' and R8 may be the same or different, and each represents a hydrogen atom or R7 and R8 together. R may form an aromatic ring or a substituted aromatic ring
", R"' may be the same or different and each represents an alkyl group having 1 to 4 carbon atoms. ) A cuprous ion lead agent represented by; at least one cuprous ion complexing agent selected from the group of; and the general formula: (where ml represents an integer of 1 or more. ) Nonionic surfactant represented by general formula (V): (wherein, m2.nl each represents an integer of 1 or more.

) で示される非イオン系界面活性剤; 一般式(′VD: (式中、ml、nlはそれぞれ1以上の整数を表わす。) A nonionic surfactant represented by; General formula ('VD: (In the formula, ml and nl each represent an integer of 1 or more.

) で示される非イオン系界面活性剤: のイJ1からJ5hばれる少なくとも1種の非イオン系
界面活性剤を含有していることを特徴とする。
) A nonionic surfactant represented by: The nonionic surfactant is characterized by containing at least one nonionic surfactant listed in A J1 to J5h.

本発明の化学銅めっき液は、銅塩、第・2銅イオン錯化
剤、遡元剤及び−l調整剤の4成分に加えて史に、後述
する第1銅イオン鉛化剤及び非イオン系界面活(<1.
剤の2成分を含有せしめて構成される。
The chemical copper plating solution of the present invention contains, in addition to four components: a copper salt, a cupric ion complexing agent, a retrograde agent, and a -l adjustment agent, a cuprous ion lead agent and a nonionic copper ion plating agent, which will be described later. System surface activity (<1.
It is composed of two components:

これら成分のうち、銅塩は銅イオンを供給し、還元剤が
この銅イオンを金属状態にまで還元する。
Among these components, the copper salt supplies copper ions, and the reducing agent reduces the copper ions to a metallic state.

第2銅イオン錯化剤は第2銅イオンとの間に安定な錯体
を形成してめっき浴(アルカリ性)での水酸化第2@の
生成を防止し、p”ffl’lJl剤はめつき浴におけ
る最適なめつき析出電位を調整する。これら成分はいず
れも、従来から化学銅めっき液の調製において常用され
てきたものを使用することができる。
The cupric ion complexing agent forms a stable complex with the cupric ion to prevent the formation of hydroxide (2@) in the plating bath (alkaline), and the p"ffl'lJl agent forms a stable complex with the cupric ion. Adjust the optimum plating deposition potential in. All of these components can be those conventionally used in the preparation of chemical copper plating solutions.

本¥14明にかかる第1銅イオン錯化剤及び非イオン系
界面活性剤f、、i、1めつき液の自己分解作用を防止
し、液の安定性、析出しためつき皮膜の機械的特性の向
上に1jする成分である。
Cuprous ion complexing agent and nonionic surfactant f, i, 1 for this ¥14 light prevent the self-decomposition effect of the plating solution, improve the stability of the solution, and improve the mechanical properties of the precipitated plating film. It is a component that contributes 1j to the improvement of characteristics.

まず、第1銅イオン錯化剤に関して説明する。First, the cuprous ion complexing agent will be explained.

用いる第1銅イオン錯化剤としては、一般式(I)、一
般式(■)、一般式(2)で示される化合物の少なくと
も1 tiXがあげられる4、 化合物(1)において、R” 、R2は同じであっても
異なっていてもよく、それぞれ、水素原子;フェニル基
;ベンゼンスルホンHシ、’:= ナトtD It #
* 7 xニル基である。これらのうち、本発明にあっ
ては、3−(2−ぎりノル)−1,2,4−トリアジン
、3−(2−ピリジル)−5,6−ジフェニル−1゜2
.4−トリアジン、3−(2−ビリツル)−6−フェニ
ル−1,2,4−トリアジン、3−(2−ピリソル)−
5,6−ジフェニル−1,2,4−トリアジン−1+、
’、P’−ジスルホン酸、3−(2−ピリジル)−6−
フェニル−1,2,4−トリアジン−p−ジスルホン酸
などが好ましいものである。
Examples of the cuprous ion complexing agent to be used include at least one TiX of the compounds represented by the general formula (I), the general formula (■), and the general formula (2)4. In the compound (1), R'', R2 may be the same or different, and each represents a hydrogen atom; a phenyl group; a benzenesulfone H,':= natD It #
*7x Nyl group. Among these, in the present invention, 3-(2-gyrinor)-1,2,4-triazine, 3-(2-pyridyl)-5,6-diphenyl-1゜2
.. 4-triazine, 3-(2-pyridyl)-6-phenyl-1,2,4-triazine, 3-(2-pyrisol)-
5,6-diphenyl-1,2,4-triazine-1+,
', P'-disulfonic acid, 3-(2-pyridyl)-6-
Phenyl-1,2,4-triazine-p-disulfonic acid and the like are preferred.

化合物(11)において、R“、 R’ 、 R’ 、
 R’は同じであっても異なっていてもよく、それぞれ
、水素原子、メチル基、エチル基、プロピル基、ブチル
基などの炭素数1〜4の低級アルキル基である。これら
のうち、本発明にあっては、2 、2’−ビス(5゜6
−シメチルー1.2.4−トリアジン)、2,2′−ビ
ス(5、G−S’エチル−1,2,4−トリアジン)、
2,2′−ビス(5,6−ソデロビルー1゜2.4−ト
リアジン)、2.2′−ビス(5,6−シプチルー1.
2.4−)リアノン)などが好貰しいものである。
In compound (11), R", R', R',
R' may be the same or different, and each is a hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, such as a methyl group, an ethyl group, a propyl group, or a butyl group. Among these, in the present invention, 2,2'-bis (5°6
-Simethyl-1,2,4-triazine), 2,2'-bis(5,G-S'ethyl-1,2,4-triazine),
2,2'-bis(5,6-soderobyl-1°2.4-triazine), 2,2'-bis(5,6-cyptyl-1.
2.4-) Rhiannon) etc. are well received.

化合物(In)において、R’、R’は同じでちっても
異なっていてもよく、それぞれ水素原子;水酸基若しく
はR7とR8が一緒になってキノキサリンなどの芳香族
環又は6,7−ヅアルキルーキノキサリンなとの置換芳
香族環を形成するような基でおり、甘た R9、RIG
は同じであっても異なっていてもよく、それぞれ、メチ
” All:+エチル基、プロピル基。
In the compound (In), R' and R' may be the same or different, and each is a hydrogen atom; a hydroxyl group, or R7 and R8 together form an aromatic ring such as quinoxaline or a 6,7-dualky A group that forms a substituted aromatic ring with quinoxaline, sweet R9, RIG
may be the same or different, and each represents a methyl group, an ethyl group, and a propyl group.

ブチル基などの炭素数1〜4の低級アルキル基である。It is a lower alkyl group having 1 to 4 carbon atoms such as a butyl group.

これらのうち、本発明にあっては、6,7−ノメチルー
2,3−ジ(2−ビリツル)−キノキサリン、2,3−
ビス(6−メチル−2−ぎリノル)−5,6−シヒドロ
ビラヅン、2,3−ビス(6−メチル−2−ビリツル)
−キノキサリン、2.3−ビス(2−ビリツル)−キノ
キサリン、2.3−ビス(6−エチル−2−ピリジル)
−キノキサリン、2,3−ビス(6−プチルー2−ピリ
ジル)−5,6−シヒドロビラジン、6,7−ダニチル
−2,3−ソ(2−ビリツル)−キノキサリンなどが好
ましいものである。
Among these, in the present invention, 6,7-nomethyl-2,3-di(2-birituru)-quinoxaline, 2,3-
Bis(6-methyl-2-linol)-5,6-cyhydroviradun, 2,3-bis(6-methyl-2-birituru)
-Quinoxaline, 2.3-bis(2-birituru)-quinoxaline, 2.3-bis(6-ethyl-2-pyridyl)
-quinoxaline, 2,3-bis(6-butyl-2-pyridyl)-5,6-cyhydrobirazine, 6,7-danityl-2,3-so(2-birityl)-quinoxaline, and the like are preferred.

これらの幀1銅イオン鉛化剤は、化学銅めっきにおける
副反応生成物として生ずる第1銅イオンとの間で安定な
錯体を形成して、めっき液を安定化し、かつ、亜ル゛化
銅の析出を防止してめつき皮膜の機械的特性の向上に寄
与する。
These copper ion lead agents form stable complexes with cuprous ions produced as a side reaction product in chemical copper plating, stabilize the plating solution, and This prevents the precipitation of and contributes to improving the mechanical properties of the plating film.

めっき液における第1銅イオン錯化剤の濃度は、1 m
g/ t〜2oomti7tの範囲にあることが好まし
い。温度が1vy/を未満ではめつき皮膜の延展性向上
の効果が表われず、200mg/lを超えてもめつき皮
膜の延展性向上の効果は飽和状態に達して無意味になる
ばかりではなく、めっきの析出速度が急激に減少し作巣
能率の低下を招くことになる。
The concentration of cuprous ion complexing agent in the plating solution is 1 m
It is preferably in the range of g/t to 2oomti7t. If the temperature is less than 1vy/l, the effect of improving the spreadability of the plating film will not appear, and if it exceeds 200mg/l, the effect of improving the spreadability of the plating film will not only reach a saturated state and become meaningless, but also The deposition rate of the plating decreases rapidly, leading to a decrease in nest-building efficiency.

つぎに、非イオン系界面活性剤に関して説明する。Next, the nonionic surfactant will be explained.

用いる非イオン系界面活性剤は一般式(iv)、一般式
(V)、−112式(ロ)で示される化合物の少なくと
も1柚である。
The nonionic surfactant used is at least one of the compounds represented by the general formula (iv), the general formula (V), and the -112 formula (b).

化合:i′)JQV)に2いて、m1iITj:1以上
の鉄敷である。
Compound: i') JQV) is 2 and m1iITj is an anvil of 1 or more.

mlが0の場合には照応する活性剤はその溶解度が小l
″S<、そのため、めっき皮膜の延展性向上に害鳥しイ
(りる4呈の計をめっき液に溶解することができない。
When ml is 0, the corresponding active agent has a small solubility in ml.
Therefore, it is difficult to improve the spreadability of the plating film.

mlが」・11大するにつれて、得られるめっき皮1i
!、艷のIA !ffl ’1”l:も向上するが、そ
の効果はm1=20付近でほぼ上限に達し’j’jji
和状態になる。そのため、nilについて仁j:とくに
上限値というものは存在しない力・、作業性の点からい
えは、mlは500以下の値であることが好lしい。
As the ml increases by 11, the resulting plating skin 1i
! , IA of the ship! ffl '1'l: also improves, but its effect almost reaches its upper limit around m1 = 20, and 'j'jji
Be in a state of peace. Therefore, from the viewpoint of force and workability, there is no particular upper limit for nil, and ml is preferably a value of 500 or less.

化合1′・す(V〕、化合物(VDにおいて、m2 、
 m3 、 Ill 、 n、。
Compound 1'・su(V), compound (in VD, m2,
m3, Ill, n,.

1叶それぞれ1以上の整数であり、いずれかが0の烏合
に(t−、、化合物θ■に関して述べたような不都合が
生ずる。化合物(■)、化合物(ロ)については、m2
十11−1 、 m、 In2がそれぞれ+、″7大す
るにつれて、延展性も向上するが、いjれも20付近で
その効果は飽和状態に達する。m2+ n+ 、 m4
 + R2はいずれも500以下の値であることが好ま
しい。
Each leaf is an integer greater than or equal to 1, and in combinations where either one is 0 (t-,, the same inconvenience as described for compound θ■ will occur.For compound (■) and compound (b), m2
As 111-1, m, and In2 increase by + and 7, respectively, the spreadability improves, but the effect reaches a saturation state around 20 in all cases. m2+ n+, m4
+ R2 is preferably a value of 500 or less.

めっき液におけるシ:・イオン系界面活性剤の8歴?Z
i−,,1omy/l〜30 v/lの範囲が好ましく
、とくに、n11 、m、十n1 、 m3+n、がそ
れぞれ20未満の」烏合には30 WI/ L〜20グ
/Lの範囲が好適で、m、 、 m2+n、 、 m、
 十n2がそれぞれ20以上の場合には、10 wi 
/ L〜5′?/lの範囲が好適である。
8 history of ionic surfactants in plating solutions? Z
The range of i-,, 1omy/l to 30 v/l is preferable, and the range of 30 WI/L to 20 g/L is particularly suitable for the case where n11, m, 10n1, m3+n are each less than 20. So, m, , m2+n, , m,
If each of 10 n2 is 20 or more, 10 wi
/ L ~ 5'? A range of /l is preferred.

本発明の化学銅めっき液を用いるに好ましいめっき条件
は、温度が50〜80℃、更には60〜75℃の範囲で
あり、PHが10.8〜13,0、更には11.8〜1
2.5の範囲である。かかるめっき条件によれば、本発
明のめつき液の特性を充分に生かすことができ、高速析
出が貞」能で延展性に富むめっき皮膜を得ることができ
る。
Preferred plating conditions for using the chemical copper plating solution of the present invention are a temperature range of 50 to 80°C, more preferably 60 to 75°C, and a pH of 10.8 to 13.0, furthermore 11.8 to 1.
It is in the range of 2.5. According to such plating conditions, the characteristics of the plating solution of the present invention can be fully utilized, and a plating film that is capable of high-speed deposition and has excellent spreadability can be obtained.

〔発明の実施例〕[Embodiments of the invention]

実施例1〜24 F4す0.3 ranのステンレススチール板ヲクレン
ザーで研摩し、80℃の10%水酸化ナトリウム溶液に
5分間浸漬して取出し、これを水洗後、10俸塩酸に當
温で5分間浸漬し、水洗して表面を清浄にしプc0つい
で、得られたステンレススチール板を・、 3M化ix’r 1 r、’A           
  50  y/を塩   酸           
  10  mvt水        残部 なる組成の溶液に2分間浸演し、流水中で1分間水洗し
た。つぎに、 塩化パラジウム          0.25  ?/
を塩   酸             104を水 
                 残 部なる組成の
液に1分間浸漬し、流水中で1分間水洗した。しかるの
ちに、 硫酸銅(5水和物)           0.04 
 モル第2銅イオン鉛化剤          0.1
   モルパラホルムアルデヒド         0
.1   モル水酸化ナトリウム   −を12.3に
するために必要な力と第1銅イオン飽化剤      
    適 量非イオン系界面活性剤        
 適 量水         残部 外る組成の各種化学銅めっき液を調製した。
Examples 1 to 24 A stainless steel plate of F4 and 0.3 ran was polished with a cleanser, immersed in 10% sodium hydroxide solution at 80°C for 5 minutes, taken out, washed with water, and then soaked in 10 drops of hydrochloric acid at room temperature. After soaking for 5 minutes and washing with water to clean the surface, the obtained stainless steel plate was converted into 3M.
50 y/hydrochloric acid
The sample was immersed in a solution having a composition of 10 mvt water and the remainder for 2 minutes, and washed under running water for 1 minute. Next, palladium chloride 0.25? /
Hydrochloric acid 104 Water
The sample was immersed in a solution with the remaining composition for 1 minute, and then washed under running water for 1 minute. After that, copper sulfate (pentahydrate) 0.04
Mol Cupric Ion Leading Agent 0.1
Molparaformaldehyde 0
.. The force required to reduce 1 mol of sodium hydroxide to 12.3 and the cuprous ion saturant
Appropriate amount of nonionic surfactant
We prepared various chemical copper plating solutions with compositions in which an appropriate amount of water and the remainder were removed.

つぎに、これら化学銅めっき液に前記のようにして触媒
化した0、3m厚のステンレススチール板の表裏にそれ
ぞれ30〜35μmのめつき膜を析出させた。めっき条
件は、めつき温厩ニア0℃、めっき液のp)l:12.
3であった。
Next, a plated film of 30 to 35 μm was deposited on each of the front and back surfaces of a 0.3 m thick stainless steel plate which had been catalyzed in the chemical copper plating solution as described above. The plating conditions were as follows: plating temperature: 0°C, plating solution p)l: 12.
It was 3.

かくして得られた銅めっき皮膜をステンレススチール板
から剥離し延展性試験に供した。延展性は次の様な18
0°折シ曲げ試験により測定した。
The copper plating film thus obtained was peeled off from the stainless steel plate and subjected to a ductility test. The spreadability is as follows18
It was measured by a 0° bending test.

まず、めっき皮膜を一方向に180°折り曲げて折多目
をつけ、次に元の位置に戻した後に圧力を加えて折目を
平坦にする。これらの操作を折シ曲げ1回と数える。折
シ目の部分でめっき皮膜が破断するまでこれらの操作を
繰シ返す。この試験法ではめつき皮膜の延展性はめつき
皮膜が耐えた折シ曲げ回数によって表現される。
First, the plating film is bent 180° in one direction to create a crease, and then returned to its original position and pressure is applied to flatten the crease. These operations are counted as one bending. These operations are repeated until the plating film breaks at the crease. In this test method, the ductility of the plating film is expressed by the number of bends the plating film withstands.

また、上記めっき皮膜を引張シ試験に供した。Further, the above-mentioned plating film was subjected to a tensile test.

すなわち、島津製作所製オートグラフ(モデルDSS−
5000)によシ、12.7 X 150簡に切断した
試験片をチャック間距fi:100wn、引張り速度=
5綱/分の条件で抗張力(Kf/J)、伸び率(尊を測
定した。
That is, Shimadzu Autograph (Model DSS-
5000), cut a test piece into 12.7 x 150 pieces, chuck distance fi: 100wn, pulling speed =
Tensile strength (Kf/J) and elongation rate (resistance) were measured under the condition of 5 ropes/min.

以上の結果全各種組成の銅めっき液と対応させて表に一
括して示した。なお、各銅めっき皮膜の析出速度(μm
/hr)も併記した。表中の喬号1〜24は本発明の笑
施しUである。
The above results are collectively shown in the table in correspondence with all the copper plating solutions of various compositions. In addition, the precipitation rate of each copper plating film (μm
/hr) is also written. Numbers 1 to 24 in the table are the materials U of the present invention.

なお、表中、化合物面、化合物(■、化合物(Ml’e
それぞれA−x、B−x、C−x”?’表ワL、A−x
 K L−けるXはm+に、B−xにおけるXはm2+
n□を、C−xにあ・けるXはms+ntkそれぞれ表
わしている。
In addition, in the table, compound side, compound (■, compound (Ml'e
A-x, B-x, C-x"?' table wa L, A-x respectively
K L-X in m+, B-x in m2+
The X added by adding n□ to C-x represents ms+ntk, respectively.

〔発明の効果〕〔Effect of the invention〕

り上の説明で明らかなように、本発明の化学銅めっき液
(ハ、めっきの析出速度が非常に大きく、同時にまた機
械的!Ik性、とりわけ、折曲げ強さでシ゛(現したよ
うな延展性に侵れた銅めっき皮膜を形成し、例えU1゛
印刷配ね板の導通回路作成に適用して有用で;(うる。
As is clear from the above explanation, the chemical copper plating solution of the present invention (c) has a very high deposition rate, and at the same time has a high mechanical property, Ik property, especially bending strength (as shown above). It forms a copper plating film with poor ductility, and is useful when applied to the creation of conductive circuits for U1 printed distribution boards, for example.

Claims (1)

【特許請求の範囲】 銅塩、第2銅イオン鉛化剤、還元剤及びPH調整剤を含
有する化学銅めっき液において、更に、一般式(I): (式中、R” 、R’は同じであっても異なっていても
よく、それぞれ、水素原子、フェニル基、置11・1フ
エニル基を表わす。) で示される餓1銅イオン鉛化剤; 一般式(11) (式中、R8、R4、R5、ROは同じであっても異な
っていてもよく、それぞれ、水素原子、炭素数1〜4の
アルキル基を表わす。) で示される第1銅イオン鉛化剤; 一般式(1■) (式中、 R’ 、R”は同じであっても異なっていて
もよく、それぞれ、水素原子、若しくはR7とR8が一
緒になって芳香族環又は置換芳香族環を形成していても
よ(: R11、Rloは同じであっても異なっていて
もよく、それぞれ、炭素数1〜4のアルキル基を表わす
。) で示される第1銅イオン鉛化剤; の群から選ばれる少なくとも1種の第1銅イオン錯化剤
、並びに、 一般弐〇V): (式中、nll  は1以上の整数を表わす。)で示さ
れる非イオン系界面活性剤; 一般式(V): (式中、m2.nl  はそれぞれ1以上の整数を表わ
す。) で示される非イオン系界面活性剤; 一般式(Vlll : (式中、1113 、 nzlrF、それぞれ1以上の
整数を表わす。) で示される非イオン系界面活性剤; の群から選ばれる少なくとも1種の非イオン系界面活性
剤を含有していることを特徴とする化学銅めっき液。
[Claims] A chemical copper plating solution containing a copper salt, a cupric ion lead agent, a reducing agent, and a PH adjuster, further comprising the general formula (I): (wherein R" and R' are (which may be the same or different and each represents a hydrogen atom, a phenyl group, or a phenyl group); General formula (11); , R4, R5, and RO may be the same or different and each represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.) A cuprous ion lead agent represented by the general formula (1 ■) (In the formula, R' and R'' may be the same or different, and each is a hydrogen atom, or R7 and R8 together form an aromatic ring or a substituted aromatic ring. Moyo (: R11 and Rlo may be the same or different and each represents an alkyl group having 1 to 4 carbon atoms.) At least one selected from the group of: One type of cuprous ion complexing agent, and a nonionic surfactant represented by the general formula (V): (where nll represents an integer of 1 or more); General formula (V): ( (In the formula, m2.nl each represents an integer of 1 or more.) A nonionic surfactant represented by the general formula (Vlll: (In the formula, 1113 and nzlrF each represent an integer of 1 or more.) A chemical copper plating solution containing at least one nonionic surfactant selected from the group of:
JP8492283A 1983-05-17 1983-05-17 Chemical copper plating solution Pending JPS59211564A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8492283A JPS59211564A (en) 1983-05-17 1983-05-17 Chemical copper plating solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8492283A JPS59211564A (en) 1983-05-17 1983-05-17 Chemical copper plating solution

Publications (1)

Publication Number Publication Date
JPS59211564A true JPS59211564A (en) 1984-11-30

Family

ID=13844193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8492283A Pending JPS59211564A (en) 1983-05-17 1983-05-17 Chemical copper plating solution

Country Status (1)

Country Link
JP (1) JPS59211564A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5059243A (en) * 1989-04-28 1991-10-22 International Business Machines Corporation Tetra aza ligand systems as complexing agents for electroless deposition of copper
CN104141120A (en) * 2014-07-01 2014-11-12 济南大学 Cuprous chemical copper plating solution

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5059243A (en) * 1989-04-28 1991-10-22 International Business Machines Corporation Tetra aza ligand systems as complexing agents for electroless deposition of copper
CN104141120A (en) * 2014-07-01 2014-11-12 济南大学 Cuprous chemical copper plating solution

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