JPS59210702A - High frequency switching circuit - Google Patents
High frequency switching circuitInfo
- Publication number
- JPS59210702A JPS59210702A JP8538183A JP8538183A JPS59210702A JP S59210702 A JPS59210702 A JP S59210702A JP 8538183 A JP8538183 A JP 8538183A JP 8538183 A JP8538183 A JP 8538183A JP S59210702 A JPS59210702 A JP S59210702A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- pin diode
- short
- semiconductor switch
- hybrid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
Landscapes
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
- Details Of Aerials (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、半尋捧累子及びノ・イブリッドを使用して
高周波の切換を行う高周波切換回路に関するものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high frequency switching circuit that switches high frequencies using a half-bridge and a hybrid.
従来この柚の回路では、第１図に示すものがあった。図
において、（１）は高周波信号を入出力する。Conventionally, this Yuzu circuit was shown in Figure 1. In the figure, (1) inputs and outputs a high frequency signal.
空中線端子、（２）は高周波商電力を入力する送信機端
子、（３）は高周波信号を出力する受信機端子、（４）
は空中線端子（１）からの高周波信号を送信機端子（２
）又は受信機端子（３）に切換える為に使用する９０ハ
イブリツド、（５）は９０°ノ・イブリッド（４）の２
つの°端子を短絡する為のＰＩＮダイオード、（６）は
ＰＩＮダイオード（５）を短絡（ＯＮ）させる為のノイ
イアスす
電流を発生鋳るバイアス発生回路、（７）はバイアス発
生回路（６）のバイアス電流をｆｆｊ１４御する為の制
御入力端子である。Antenna terminal, (2) is a transmitter terminal that inputs high-frequency commercial power, (3) is a receiver terminal that outputs high-frequency signals, (4)
connects the high frequency signal from the antenna terminal (1) to the transmitter terminal (2).
) or the 90 hybrid used to switch to the receiver terminal (3), (5) is the 2 of 90° hybrid (4).
(6) is a bias generation circuit that generates a noise current to short-circuit (ON) the PIN diode (5), (7) is a bias generation circuit (6). This is a control input terminal for controlling the bias current of ffj14.
次に動作について説明する。Next, the operation will be explained.
制御入力端子（７）に制御信号を入力する事によシ、バ
イアス発生回路（６）でＰＩＮダイオード（５）を短終
する為のバイアスを発生し、短絡させる。９０ノ飄イブ
リツド（４）は２端子を短絡させることによシ、空中線
端子（１）と送信機端子（２）が接続される。又、受信
機端子（３）は開放となる。By inputting a control signal to the control input terminal (7), the bias generation circuit (6) generates a bias to short-circuit the PIN diode (5). The antenna terminal (1) and transmitter terminal (2) of the 90-wire hybrid (4) are connected by short-circuiting the two terminals. Also, the receiver terminal (3) is open.
バイアス発生回路（６）からＰＩＮダイオード（５）に
与えるバイアスが無くなった場合、ＰＩＮダイオード（
５）に貯えられた電荷は、ＰＩＮダイオード（５）の内
部抵抗による自己放電によシ放亀する。When the bias generation circuit (6) loses the bias applied to the PIN diode (5), the PIN diode (
The charges stored in the PIN diode (5) are released by self-discharge due to the internal resistance of the PIN diode (5).
ＰＩＮダイオード（５）の電荷が無くなることによシ、
９０ハイブリツド（４）の２端子は開放となり、空中線
端子（１）と受信機端子（３）が接続される。又、送信
機端子（２）は開放となる。Due to the loss of charge on the PIN diode (5),
Two terminals of the 90 hybrid (4) are open, and the antenna terminal (1) and receiver terminal (3) are connected. Also, the transmitter terminal (2) is open.
従来の高周波切換回路は、以上の様に構成されているの
で、冒周波高■１力の切換を行うには、ＰＩＮダイオー
ドの耐電力が大きなもの（蓄積電荷方４の大きなもの）
を使う必要があり、そのためＰＩＮダイオードの電彷工
の放一時間が長くかかシ、切換時間が長くなる等の欠点
があった。Conventional high-frequency switching circuits are configured as described above, so in order to perform high-frequency switching with 1 power, a PIN diode with a large withstand power (one with a large accumulated charge of 4) is required.
Therefore, there were drawbacks such as a long discharge time and a long switching time for the PIN diode.
この発明は、上記の様な従来のものの欠点を除去する為
になされたもので、ＰＩＮダイオードに蓄積された電荷
を、半導体スイッチで急速に放電することによシ、高周
波高重力の切換を高速で行うことか出来る高周波切換回
路を提供することを目的としている。This invention was made in order to eliminate the drawbacks of the conventional devices as described above. By rapidly discharging the charge accumulated in the PIN diode using a semiconductor switch, high frequency and high gravity switching can be performed at high speed. The purpose of this invention is to provide a high frequency switching circuit that can perform the following functions.
以下この発明の一実施例を第２図について説明する。An embodiment of the present invention will be described below with reference to FIG.
第２図において、（１）〜（７）は第り図と同一である
。。In FIG. 2, (1) to (7) are the same as in FIG. .
（８）はＰＩＮダイオード（５）に蓄積された電荷を急
速に放−させる為の半導体スイッチ、（９）は半導体ス
イッチ（８）へ与える制御信号を人力する放−制御入力
端子である。(8) is a semiconductor switch for rapidly releasing the charge accumulated in the PIN diode (5), and (9) is a release control input terminal for inputting a control signal to the semiconductor switch (8).
次に動作について説明する。Next, the operation will be explained.
制御信号入力端子（７）に制御信号を入力する事により
、バイアス発生回路（６）で、ＰＩＮダイオード（５）
を短絡する為のバイアスを発生し短終させる。By inputting a control signal to the control signal input terminal (7), the bias generation circuit (6) generates a PIN diode (5).
Generates a bias to short-circuit and terminate the short circuit.
９０ハイブリツド（４）は２端子を短終させることによ
シ、空中線端子（１）と送信機端子（２）が接続される
っ又、受信機端子（３）は開放となる。By short-terminating the two terminals of the 90 hybrid (4), the antenna terminal (1) and the transmitter terminal (2) are connected, while the receiver terminal (3) is left open.
バイアス発生回路（６）からＰＩＮダイオード（５）に
与えるバイアスが無くなると同時に、放電制御式ノア端
子（９）に半導体スイッチ（８）を制御する信号を入力
し、半導体スイッチ（８）を短絡し、ＰＩＮダイオード
（５）に蓄積された電荷を急速に放電する。At the same time as the bias generated from the bias generation circuit (6) to the PIN diode (5) disappears, a signal to control the semiconductor switch (8) is input to the discharge control type NOR terminal (9) to short-circuit the semiconductor switch (8). , rapidly discharges the charge accumulated in the PIN diode (5).
１） Ｉ Ｎ タイオード＋５１の電荷が無くなること
により、９０ハイブリツド（４）の２端子は開放となシ
。1) Since the charge on the I N diode +51 disappears, the two terminals of the 90 hybrid (4) become open.
空中線端子（１）と受信機端子（３）が接続されるー、
又、送信機端子（２）は開放となる。The antenna terminal (1) and receiver terminal (3) are connected.
Also, the transmitter terminal (2) is open.
以上のように、この発明によれは、ＰＩＮダイオードの
蓄積電荷を半導体スイッチで急速に放電出来るようにし
たので、高周波高重力を関連に切換えることが出来る効
果がある。As described above, according to the present invention, the charge accumulated in the PIN diode can be rapidly discharged by the semiconductor switch, so that high frequency and high gravity can be switched in a related manner.
第り図は従来の高周波切換回路を示す回路図、第２図は
この発明の一実施例の概略構成図である。
（１）・・・空中線端子、（２）・・・送信機端子、（
３）・・・受信機端子、（４）・・・９０°ハイブリツ
ド、（５）・・・ＰＩＮダイオード、（６）・・・バイ
アス発生回路、（７）・・・制御入力端子。
（８］・・・半導体スイッチ、（９）・・・放電制御入
力端子。
なお、図中、同一符号は同−又は相当部分を示す。
代理人 大岩増雄
第１図
第２図FIG. 2 is a circuit diagram showing a conventional high frequency switching circuit, and FIG. 2 is a schematic diagram of an embodiment of the present invention. (1)... Antenna terminal, (2)... Transmitter terminal, (
3)...Receiver terminal, (4)...90° hybrid, (5)...PIN diode, (6)...Bias generation circuit, (7)...Control input terminal. (8)...Semiconductor switch, (9)...Discharge control input terminal. In the figures, the same reference numerals indicate the same - or equivalent parts. Agent Masuo Oiwa Figure 1 Figure 2
Claims (1)
続されたｌ） Ｉ Ｎダイオードとを備え、高周波高電
力の切換えを行なう高周波切換回路において、上記ＰＩ
Ｎダイオードの電荷を急速に放電させる半導体スイッチ
を備えたことを特徴とする高周波切換回路。(1) In a high frequency switching circuit that includes a hybrid and an IN diode connected to a terminal of the hybrid and performs high frequency and high power switching, the above PI
A high frequency switching circuit characterized by being equipped with a semiconductor switch that rapidly discharges the charge of an N diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8538183A JPS59210702A (en) | 1983-05-13 | 1983-05-13 | High frequency switching circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8538183A JPS59210702A (en) | 1983-05-13 | 1983-05-13 | High frequency switching circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59210702A true JPS59210702A (en) | 1984-11-29 |
Family
ID=13857154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8538183A Pending JPS59210702A (en) | 1983-05-13 | 1983-05-13 | High frequency switching circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59210702A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0361801A2 (en) * | 1988-09-30 | 1990-04-04 | Mitsubishi Denki Kabushiki Kaisha | A microwave semiconductor switch |
| DE19749325B4 (en) * | 1997-11-07 | 2009-11-26 | Eads Deutschland Gmbh | Transmit / receive circuit |
-
1983
- 1983-05-13 JP JP8538183A patent/JPS59210702A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0361801A2 (en) * | 1988-09-30 | 1990-04-04 | Mitsubishi Denki Kabushiki Kaisha | A microwave semiconductor switch |
| US4985689A (en) * | 1988-09-30 | 1991-01-15 | Mitsubishi Denki Kabushiki Kaisha | Microwave semiconductor switch |
| DE19749325B4 (en) * | 1997-11-07 | 2009-11-26 | Eads Deutschland Gmbh | Transmit / receive circuit |
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