JPS59197555A - Method and apparatus for replenishing metal ion to chemical plating bath - Google Patents

Method and apparatus for replenishing metal ion to chemical plating bath

Info

Publication number
JPS59197555A
JPS59197555A JP6889683A JP6889683A JPS59197555A JP S59197555 A JPS59197555 A JP S59197555A JP 6889683 A JP6889683 A JP 6889683A JP 6889683 A JP6889683 A JP 6889683A JP S59197555 A JPS59197555 A JP S59197555A
Authority
JP
Japan
Prior art keywords
copper
chemical
ion
plating
plating solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6889683A
Other languages
Japanese (ja)
Inventor
Yasuhiko Hashimoto
康彦 橋本
Hiroshi Nakamura
宏 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON FILTER KK
Original Assignee
NIPPON FILTER KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON FILTER KK filed Critical NIPPON FILTER KK
Priority to JP6889683A priority Critical patent/JPS59197555A/en
Publication of JPS59197555A publication Critical patent/JPS59197555A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1617Purification and regeneration of coating baths

Abstract

PURPOSE:To prolong the life of a chemical plating bath and to enhance the quality of a plating film, by replenishing a plating metal ion to the chemical plating bath by treating said chemical plating bath with a cation exchange resin having the metal ion adsorbed therewith. CONSTITUTION:An ion exchange tower 3 is packed with a weak acidic ion exchange resin 13 which is, in turn, washed with pure water in a storage tank 7. Subsequently, sulfuric acid with a concn. of about 5% is sent to the exchange tower 3 from an acid tank 4 to convert a part of the ion exchange resin 13 to a H type while a caustic soda solution with a concn. of about 4% is sent to the exchange tower 3 from an alkali storage tank 5 to convert the same to a Na type. In the next step, the ion exchange resin 13 is washed with water and, thereafter, a copper sulfate solution with a concn. of about 16% is sent from a copper salt storage tank 6 to convert the Na type to a Cu type through the adsorption of a copper ion. After washing and backwashing are further performed, the chemical plating bath of a copper ion replenishing tank 2 is passed through the ion exchange tower 3 by a pump P-1 to elute the copper ion which is, in turn, again returned to the replenishing tank 2 to be supplied to a chemical copper plating tank 1 through a recirculation tank 10 and a filter 11 while the plating bath of the plating tank 1 is sent to the replenishing tank 2 by the pump P-1.

Description

【発明の詳細な説明】 本発明は、化学めっきを連続或は継続して行なうKあた
り、化学めっき液の使用寿命を向上させると共に化学め
っき反応を一定化させ、めっき製品の品質を同上させる
だめの化学めっき敵への消耗した金属イオンの?IW給
方法及び装置に閃する。
[Detailed description of the invention] The present invention improves the service life of the chemical plating solution, stabilizes the chemical plating reaction, and improves the quality of the plated product when chemical plating is performed continuously or continuously. Chemical plating of depleted metal ions to the enemy? I am inspired by IW feeding methods and devices.

一般に化学めっき、特に、化学銅めっきは、プリント配
線基板、その他電子機a部品のメッキ方法として広く工
業的に用いられている、例えば従来の化学銅めっきに3
いて、銅の析出によシ、必然的に銅イオンの低下をきた
し、銅の析出速度が著しく損われで≠る結果となる。
Generally, chemical plating, especially chemical copper plating, is widely used industrially as a plating method for printed wiring boards and other electronic equipment parts.
As a result, copper precipitation inevitably causes a decrease in copper ions, resulting in a significant loss in the copper precipitation rate.

このような化学めっき反応による銅イオンの消耗を補う
には、銅浴液、特に値ば銅の礫厚浴液のふ加によってい
た。そのため、化学銅めっき液を連続して使用すると、
化学めっき液中には、めっき反応で消費されない硫酸イ
オンが蓄積し、p+−+ また、液の州調整のために加えるアルカリ金属水酸化物
、殊に、水酸化ナトリウムとの反応生成物の硫酸す) 
l)ラムが蓄積して、めっき液中の塩濃度が上昇する。
In order to compensate for the consumption of copper ions due to such chemical plating reactions, it has been necessary to increase the copper bath solution, especially the copper gravel bath solution. Therefore, if chemical copper plating solution is used continuously,
In the chemical plating solution, sulfate ions that are not consumed in the plating reaction accumulate, p+-+ Also, the alkali metal hydroxide added to adjust the state of the solution, especially sulfuric acid, which is a reaction product with sodium hydroxide. vinegar)
l) Lamb accumulates and the salt concentration in the plating solution increases.

この塩の蓄積は、化学銅めっき液の安定性を悪化させ、
析出速度を著しく低下させることとなシ、ひいては析出
皮膜の延性及び抗張力の低下となる。
This salt accumulation deteriorates the stability of the chemical copper plating solution,
This results in a significant decrease in the deposition rate and, in turn, in the ductility and tensile strength of the deposited film.

そこで、従来は、化学めっき液中の塩濃度が高くなるに
つれて、化学めっき液の比重が大きくなる点に着目して
、化学めっき液の比重が一足値を越えたところで、全部
の化学めっき液を廃棄して新しい化学めっき液に更新す
るか、或は、化学めっき液の一部を廃棄して新しい化学
めっき液を補光するかしていた。いずれにせよ、従来の
化学鋼めっき法では、塩濃度が爾い化学めっき液は扁采
しなければならなかった。
Therefore, in the past, focusing on the fact that the specific gravity of the chemical plating solution increases as the salt concentration in the chemical plating solution increases, the entire chemical plating solution was removed when the specific gravity of the chemical plating solution exceeded a certain value. Either the chemical plating solution was discarded and replaced with a new chemical plating solution, or a part of the chemical plating solution was discarded and a new chemical plating solution was added. In any case, in the conventional chemical steel plating method, the chemical plating solution had to be thickened due to the high salt concentration.

ところで、廃棄される化学めっき液は、1%濃度のC0
L) 、錯化剤及び重金属を含有するため、その廃液処
理は非常に困難で必シ、多額の費用を要する。また、化
学めっき液の一部を更新するとしても、化学めっき液の
建浴に女する費用は陥<、めっきコストの中で占める割
合も簡くなるので、問題となっていた。
By the way, the chemical plating solution to be discarded has a concentration of 1% CO.
L) Since it contains complexing agents and heavy metals, its waste liquid treatment is extremely difficult and necessarily requires a large amount of cost. Furthermore, even if some of the chemical plating solutions were to be replaced, the cost of setting up the chemical plating solution would be costly and would easily account for a proportion of the plating cost, which was a problem.

このような問題点の解決をはかるために、既に提案され
た方法として、水分を減圧蒸発濃縮して、硫酸ナトリウ
ムを晶析除去する方法であり、もう一つは、電気透析装
置によシ蓄積イオンを除去する方法である。前者の方法
は、熱工坏ルギーを使用するため、省エネルギーの見地
から好ましいとはいえず、また、晶析除去するためには
、無電解鋼めっき液中に旨い濃度の硫酸ナトリウムを存
在させなくてはならない。しかし、そのようなめっき液
からは良い品質の製品は望めない。また、電気透析によ
る脱イオンは目的とする蓄積イオンの脱イオンの他に錯
化剤も除去されるため、めっき液の管理及び濃綿液の処
理等に問題を残している。
In order to solve these problems, one method that has already been proposed is to evaporate water under reduced pressure and remove sodium sulfate by crystallization.Another method is to remove sodium sulfate by crystallization. This is a method of removing ions. The former method uses thermal engineering, which is not preferable from an energy-saving perspective, and in order to remove crystallization, it is necessary to avoid the presence of sodium sulfate at a good concentration in the electroless steel plating solution. must not. However, products of good quality cannot be expected from such a plating solution. In addition, deionization by electrodialysis not only deionizes the accumulated ions but also removes the complexing agent, which leaves problems in managing the plating solution and processing the concentrated cotton solution.

これらの改善策は、いずれも、めっき−液中に蓄積した
塩類を除去する方法であるため、これら無電解めっき液
中には、化学めっきに好ましくない硫酸塩が常に存在す
ることでめる。
Since all of these improvement measures are methods for removing salts accumulated in the plating solution, sulfates, which are undesirable for chemical plating, are always present in these electroless plating solutions.

そこで、硫酸イオンの混入を避ける銅イオンの補給方法
についての提案がなされた。この銅イオンの補線方法と
して、銅イオンの補給を、金属鋼のアノード溶解によっ
て行う方法があるおり、必然的に01(−イオン濃度が
大きくなっているので、陽極面では水酸化銅が沈澱析出
して、電極を覆い、陽極の溶解効率が低下し、問題がI
−1 ある。しかも、それにガロえて、液のPMが高いと、め
っき反応が起り易くなって、電解摺等において、金属鋼
が併出し問題でめった。本発明は、化学めりき欣、符に
化学銅めっき液において、銅・fオンが錯化剤等と結合
し溶解するものという考えに基いている。
Therefore, a proposal was made for a method of replenishing copper ions to avoid contamination with sulfate ions. As a supplementary wire method for this copper ion, there is a method of replenishing the copper ion by dissolving the metal steel anode, and as the 01 (- ion concentration is high, copper hydroxide is precipitated on the anode surface. It deposits and covers the electrode, reducing the dissolution efficiency of the anode and causing problems.
-1 Yes. Moreover, when the PM content of the solution is high, plating reactions are more likely to occur, and metal steels are often used in electrolytic printing, etc. due to the problem of co-printing. The present invention is based on the idea that, in a chemical copper plating solution, copper f-ion combines with a complexing agent and dissolves.

すなわち、不発明は、化学めっき液、例えば化学銅めっ
き液を、少くともその一部がめつき用金属型の陽イオン
交換樹脂例えば、調型の陽イオン交換樹脂、又は銅イオ
ンを配位若しくは吸着したキレート樹脂或はこ扛らの混
合物で処理することによシ、化学めっき液、例えば、化
学銅めっき液にめっき用金属イオン、例えば、銅イオン
を補給するものである。
In other words, the non-invention is to apply a chemical plating solution, such as a chemical copper plating solution, to a cation exchange resin, at least a part of which is a metallic type for plating, such as a prepared cation exchange resin, or a cation exchange resin that coordinates or adsorbs copper ions. By treating with a chelate resin or a mixture thereof, plating metal ions, such as copper ions, are supplied to a chemical plating solution, such as a chemical copper plating solution.

本発明は、金属塩溶液を予めH型の陽イオン交換樹脂又
はキレート樹脂に通液し、イオン交換させ、H型のHイ
オンを金属イオンで置換して、金属型の陽イオン交換樹
脂金属イオンを配位若しくは吸着したキレート樹脂とし
、蛍属イオンのみをイオン又換w胎及び/又はキレート
樹脂に捕捉せしめ、この捕捉された金属イオンをめっき
液中に溶出させるので、陰イオンは分離さfL、シたが
って、金属イオンのみを補給することができる。
In the present invention, a metal salt solution is passed through an H-type cation exchange resin or a chelate resin in advance to perform ion exchange, and the H-type H ions are replaced with metal ions. The chelate resin coordinates or adsorbs the metal ions, and only the fluorescent ions are captured by the ion exchanger and/or the chelate resin, and the captured metal ions are eluted into the plating solution, so the anions are separated. , therefore only metal ions can be replenished.

そして、この金属型例えば調型の陽イオン交換樹脂から
金属イオン例えば銅イオンを脱着するのは、化学めっき
液中に存在する金属イオンのキレート化剤(錯化剤)例
えば銅イオンのキレート化剤、すなわち錯化剤によるも
のと考えI−1 しれる。そして、この脱着は411以下のアルカリ性領
域から酸性領域において行われるのが望I−1 ましい。例えば州11以上の高アルカリ領域において、
化学銅めっき液を調型イオン交換樹脂に通液して銅イオ
ンの脱着操作を行うと、長時間の間に、該イオン交換樹
脂層内で、銅イオンの還元反応が起り、該イオン交換樹
脂内に銅が析出する。との銅イオンの脱着時におけるイ
オン交換樹脂ピコでの銅イオンの還元反応を抑制するた
め、化学銅め゛っき液を予め、H型の陽イオン交換樹脂
に通して脱アルカリするか或は通液する調型イオン交換
樹脂層の一部のイオン交換樹脂をH型とすることによっ
て、通液する化学鋼l−1 めっき液の座を11以下に維持することができ、イオン
交侠榴脂層内での銅イオンの還元析出が防止できる。
Metal ions, such as copper ions, are desorbed from this metal type, for example, prepared cation exchange resin, using a metal ion chelating agent (complexing agent), such as a copper ion chelating agent, present in the chemical plating solution. In other words, it is thought that this is due to the complexing agent. This desorption is preferably carried out in an alkaline range of 411 or less to an acidic range. For example, in the high alkaline areas of more than 11 states,
When a chemical copper plating solution is passed through a prepared ion exchange resin to desorb copper ions, a reduction reaction of copper ions occurs within the ion exchange resin layer over a long period of time, and the ion exchange resin Copper precipitates inside. In order to suppress the reduction reaction of copper ions in the ion exchange resin PICO during the desorption of copper ions with the chemical copper plating solution, the chemical copper plating solution is passed through an H-type cation exchange resin in advance to dealkalize it or By making a part of the ion exchange resin of the ion exchange resin layer through which the liquid passes through, the level of the chemical steel l-1 plating solution through which the liquid passes can be maintained at 11 or less, and the ion exchange resin layer can be maintained at 11 or less. Reductive precipitation of copper ions within the fat layer can be prevented.

本発明に2いて、陽イオン交換樹脂は、金属型例えば調
型で、化学めっき液例えば化学銅めっき液とイオン交換
して、化学金属めっき液、例えば化学銅めっ@液に、金
属イオン例えば銅イオンを溶離することが可能な強戚性
陽イオン交換樹脂及び弱敵性陽イオン交換樹脂及び弱敵
性陽イオン交換樹脂のいずれも使用することができる。
In accordance with the second aspect of the present invention, the cation exchange resin is ion-exchanged with a chemical plating solution, such as a chemical copper plating solution, in a metal form, for example, in a prepared form, to form a chemical metal plating solution, such as a chemical copper plating solution, with metal ions, e.g. Any of strongly related cation exchange resins, weakly hostile cation exchange resins, and weakly hostile cation exchange resins that can elute copper ions can be used.

そして、こnら1場イオン父侠イ町脂の中でも、弱敵性
陽イオン交換樹脂を使用するのが、イオン交換容量が大
きく、吸沿及び脱着の拌易畑から望ましい。しかし、こ
れらの甲でも、特に、マクロポーラス屋弱酸性陽イオン
父換樹脂を使用するのが望゛ましい。
Among these 1-field ion-based resins, it is desirable to use a weakly hostile cation exchange resin because it has a large ion exchange capacity and is easy to mix in adsorption and desorption. However, even in these cases, it is particularly desirable to use macroporous, weakly acidic, cationic, parent-converted resins.

本明細書において、「化学めっき液」の用語は、銅、ニ
ッケル、コバル[、亜鉛その他金属の化学めっき液を意
味し、金属イオン及び金属イオンのキレート化剤(錯化
剤〕を使用するものであれば、その他如何なる成分を含
有するものであっても差支えない。また、この用語は、
操業中に金属イオンを消耗した化学めっき&はもと贅剤
、例えば水敏化ナトリウム浴欣、その他の成分を金石す
るものをも意味する。
In this specification, the term "chemical plating solution" refers to a chemical plating solution for copper, nickel, cobal [, zinc, and other metals] that uses metal ions and a chelating agent (complexing agent) for the metal ions. If so, there is no problem even if it contains any other ingredients.In addition, this term
It also refers to chemical plating and additives that have consumed metal ions during operation, such as water sensitizing sodium baths, and other ingredients.

また、1−化学銅めっ@液」の用語は、化学鋼めっき操
業中に銅イオンを消耗して父化した化学めっき敢はもと
よシ、操業中の化学銅めっき液をも意味する。
In addition, the term 1-Chemical copper plating solution refers not only to the chemical plating solution that has depleted copper ions during the chemical steel plating operation, but also to the chemical copper plating solution during the operation. .

また、本発明において、イオン交換操作は、イオン交換
樹脂又はキレート樹脂と化学めっき液が元号に接触で@
nは、如何なるイオン交換操作方法も使用できる。以下
、図面に基ついて本発明の方法及び装置を説明する。
In addition, in the present invention, the ion exchange operation is performed by bringing the ion exchange resin or chelate resin into contact with the chemical plating solution.
Any ion exchange operation method can be used for n. The method and apparatus of the present invention will be explained below with reference to the drawings.

図は、本発明の一笑施例の化学鋼めっきのフローシート
である。
The figure is a flow sheet of chemical steel plating according to one embodiment of the present invention.

1、銅イオンの脱着工程 化学鋼めっき債1で化学銅めっき反応で銅イオンを消耗
した化学銅めっき液1′の一部をポンプP−3によって
銅イオン補給41iI2に送液する。
1. Copper ion desorption process A part of the chemical copper plating solution 1', which has been depleted of copper ions by the chemical copper plating reaction in the chemical steel plating bond 1, is sent to the copper ion supply 41iI2 by the pump P-3.

同時にポンプP −2によって、この送液量と同友の、
調型のイオン交換樹脂13から銅イオンを溶離した化学
則めっき液を、銅イオン補給槽2から、化学銅めっき僧
1の循環槽10に送液する。
At the same time, by pump P-2, this amount of liquid is
A chemical plating solution in which copper ions have been eluted from the prepared ion exchange resin 13 is sent from the copper ion supply tank 2 to the circulation tank 10 of the chemical copper plating machine 1.

この送液は、化学鋼めっき惰1内の化学鋼めっき液1′
の銅イオン磯度が菅埋級度範囲内になるまで絖ける。化
学銅めっ@惰1内の化学鋼めっき液は、ポンプP−4に
よって、循環#i10及びフィルター11を経由して化
学銅めっき槽1に循環する。ポンプP−3によって銅イ
オン補給槽2に送られた化学銅めっ@赦は1.ポンプP
−1、バルブ14、フィルター12、バルブ15からイ
オン父換塔3に入り、イオン父換塔3から流出する液は
バルブ20を経由して銅イオン補給槽2に戻る。このt
i、を循環通液しながら、調型のイオン交換樹脂13か
ら銅イオンを化学銅めっき液中に溶離させ、化学銅めっ
き液中の銅イオン碌度を増加させる。
This liquid is supplied to the chemical steel plating solution 1' in the chemical steel plating tank 1.
The copper ion hardness of the steel is drilled until it falls within the range of the kanji grade. The chemical steel plating solution in the chemical copper plating @ ina 1 is circulated to the chemical copper plating tank 1 via the circulation #i10 and the filter 11 by the pump P-4. The chemical copper plating sent to the copper ion supply tank 2 by pump P-3 is 1. Pump P
-1, the liquid enters the ion father exchange tower 3 through the valve 14, filter 12, and valve 15, and the liquid flowing out from the ion father exchange tower 3 returns to the copper ion replenishment tank 2 via the valve 20. This t
While circulating the solution, copper ions are eluted from the prepared ion exchange resin 13 into the chemical copper plating solution, thereby increasing the strength of copper ions in the chemical copper plating solution.

この化学銅めっき准の調型のイオン交換樹脂13からの
銅イオンを脱着するイオン交換樹脂の機構は明確に説明
することはできないが、一応、化学鋼めっき液の銅キレ
ート化剤と銅イオンとの結合力が、イオン交換樹脂13
の交換塔と銅イオンとの結合力より q=1いことによ
るものと考えられる。
Although the mechanism of the ion exchange resin desorbing copper ions from the ion exchange resin 13 prepared in the same manner as this chemical copper plating cannot be clearly explained, it can be assumed that the copper chelating agent in the chemical steel plating solution and the copper ions The bonding force of ion exchange resin 13
This is thought to be due to the fact that q=1 is smaller than the bonding force between the exchange tower and copper ions.

調型のイオン交換樹脂13から銅イオンが総て脱着した
時点で、イオン交換反応により銅イオンを吸着させて、
イオン交換樹脂13を再ひ調型に変換させる。
When all the copper ions have been desorbed from the prepared ion exchange resin 13, the copper ions are adsorbed by an ion exchange reaction,
The ion exchange resin 13 is converted into a reconditioned type.

ン、銅イオンの吸着工程 弱酸性陽イオン交換樹脂層のNa型1tをイオン交換塔
3に充填し、ポンプP−8によシ、純水貯槽7から純水
をバルブ16かしイオン交換塔3に通水して、イオン交
換樹脂13を水洗する。洗浄排水はバルブ21から廃水
処理装置24に排水される。水洗後、岐貯槽4から、ポ
ンプP−5によって例えば、5%硫酸をバルブ17及び
バルブ16を経由してイオン交換塔3に通液し、イオン
交換mt+百13の一部をH型に再生する。再生排水は
バルブ21から1発水処理装置24に排出される。
In the adsorption step of copper ions, 1 ton of Na-type weakly acidic cation exchange resin layer is filled into the ion exchange tower 3, pump P-8 is used to pump pure water from the pure water storage tank 7 through the valve 16, and the ion exchange tower is pumped through the valve 16. 3 to wash the ion exchange resin 13 with water. Washing wastewater is discharged from the valve 21 to the wastewater treatment device 24 . After washing with water, for example, 5% sulfuric acid is passed through the ion exchange tower 3 from the branch storage tank 4 via the valves 17 and 16 using the pump P-5, and a part of the ion exchange mt+1013 is regenerated into H type. do. The recycled waste water is discharged from the valve 21 to the single water treatment device 24 .

イオン交換樹脂の丹生後、銅塩貯槽6から、ポンプP−
7によって、例えば、16%硫酸銅溶液をバルブ19及
びバルブ16をiM由してイオン交換塔3に通液し、イ
オン交換樹脂13に銅イオンを吸着させてNa型・rオ
ン又換樹J市を7111Il型に変換する。吸着排散r
i:信改ナトl)ラム全含有して寂9、バルブ21から
廃水処理装置24に排出される。この吸着操作によって
、イオン交換街力旨131を中に80′?の銅イ万ンが
吸着される1、吸着操作終了後、純水貯槽7からポンプ
P−8によって、バルブ16を経由して、水をイオン交
換塔3に通水してイオン交換樹脂中に残留する硫酸銅を
水洗除去する。水洗排液はバルブ21から廃水処理装置
24に排出さnる。40分間水洗後、純水をバルブ26
ヲ経由してイオン交換塔3に通水し逆洗する。この逆洗
操作によって、イオン交換塔3内のH型のイオン交換樹
脂13と調型のイオン交換樹脂13を混合する。
After the ion exchange resin is pumped from the copper salt storage tank 6, the pump P-
7, for example, a 16% copper sulfate solution is passed through the ion exchange tower 3 through the valve 19 and the valve 16, and the copper ions are adsorbed on the ion exchange resin 13 to form Na-type, r-on, or sulfuric acid. Convert city to type 7111Il. adsorption/dissipationr
i: Shinkai Natl) The ram containing all the ram is discharged from the valve 21 to the waste water treatment device 24. By this adsorption operation, 80'? After the adsorption operation is completed, water is passed from the pure water storage tank 7 to the ion exchange tower 3 via the valve 16 by the pump P-8 and into the ion exchange resin. The remaining copper sulfate is removed by washing with water. The washing liquid is discharged from the valve 21 to the waste water treatment device 24. After washing for 40 minutes, pour pure water into valve 26.
The water is passed through the ion exchange tower 3 for backwashing. By this backwashing operation, the H type ion exchange resin 13 in the ion exchange tower 3 and the prepared ion exchange resin 13 are mixed.

逆洗後、姥イオン補給槽2の化学鋼のっき液を、イオン
交換塔3に、ポンプP−1によってバルブ15ケ経田+
、−C通液し、イスーン:!1!′換塔3内に残留する
水を押し出し、この排水は/パルプ21から排出する。
After backwashing, the chemical steel plating solution in the ion supply tank 2 is transferred to the ion exchange tower 3 through the 15 valves by pump P-1.
, -C through the liquid, Isoon:! 1! The water remaining in the exchange tower 3 is pushed out, and this waste water is discharged from the pulp 21.

かくして、該塔3内に化学銅めっ@′tTIi、を置換
充填する。
In this way, chemical copper plating @'tTIi is substituted and filled into the column 3.

そこで、バルブ21を閉じ、バルブ2oを囲いて、銅イ
オン補給憎2から化学鋼めっき液全イオン父換塔3に通
液し、調型のイオン交換樹脂13がら銅イオンを化学鋼
めっき液によって溶離する。
Therefore, the valve 21 is closed, the valve 2o is enclosed, and the chemical steel plating solution is passed from the copper ion supply tank 2 to the total ion exchange tower 3, and the copper ions are removed from the prepared ion exchange resin 13 by the chemical steel plating solution. Elute.

すなわち、組成Cu O,038モ/l//l 、 E
DTA、 ・2 NaH O111モル/を及びホルマリン0.06モル/lで、
棚12.1の化学鋼めっき液金銅イオン補給槽6に入れ
、この化学銅めっき液を、ポンプP−1により、バルブ
14、フィルター12及ヒバルブ15、イオン交換塔3
及びバルブ20を経由して銅イオン補給惜2に至る経路
にSV6で1時間循環した。その/を増加した。この液
上化学銅めっき檜1の銅イオン補給液として使用して、
良好なめっき皮膜の化学鋼めっきが行えた。
That is, the composition CuO,038mol/l//l, E
DTA, 111 mol/l of 2 NaH O and 0.06 mol/l formalin;
The chemical steel plating solution is placed in the gold copper ion supply tank 6 on the shelf 12.1, and the chemical copper plating solution is pumped through the valve 14, the filter 12, the valve 15, and the ion exchange tower 3 by the pump P-1.
Then, via the valve 20, the copper ion supply tank 2 was circulated at SV6 for 1 hour. The / was increased. Use it as a copper ion replenishment solution for this liquid chemical copper plating cypress 1.
Chemical steel plating with a good plating film was achieved.

実施例 イオン交換樹脂は、マクロポーラス型弱酸性陽イオン又
俣側脂(日本フィルタ一体式公社KBC−5(商品名月
1tを使用した。このイオン交換樹脂をイオン交換塔に
充填し、4嵩侃鍍を用いてH型に再生し、水洗後、4%
苛苛性ノー浴溶液コンディショニングし、水洗後、10
%硫酸鋼溶液をイオン交換塔に通液して、イオン交換樹
脂に銅イオンを吸着させた。約60分にわたり水洗を行
って、イオン交換塔内の硫酸イオンを除去した。このI
Lのイオン交換樹脂に吸着した銅イオンの量は約70?
であった。
The ion exchange resin used in this example was macroporous weakly acidic cation Matamata fat (KBC-5 (trade name: 1 ton) manufactured by Japan Filter Integrated Corporation. This ion exchange resin was packed into an ion exchange tower and Regenerated into H type using kanban and washed with water, 4%
After conditioning with caustic no-bath solution and washing with water,
% steel sulfate solution was passed through an ion exchange tower to adsorb copper ions on the ion exchange resin. Water washing was performed for about 60 minutes to remove sulfate ions in the ion exchange tower. This I
The amount of copper ions adsorbed on the ion exchange resin L is approximately 70?
Met.

次に、化学銅めっき液4tを調製した。その液の組成は
、ELITA °2Na O,11モル/l 、 37
%ホルj−1 マリy  5ml/L NaOHPii12.2とする
z、z、2′−ジピリジル20■/l PE0番100
020ゴ/lであった。
Next, 4 tons of chemical copper plating solution was prepared. The composition of the liquid is ELITA °2Na O, 11 mol/l, 37
%Hol j-1 Mariy 5ml/L NaOHPii12.2 z,z,2'-dipyridyl 20■/l PE No. 100
It was 0.020 go/l.

この液の組成は、通常の化学銅めっき液と対比して銅イ
オンを含んでいない点で相違するものである。この銅イ
オンを含まない化学鋼めっき液2tを銅イオン補帖僧に
入n1イオン交換塔にSV4で30分間循環通液したと
ころ、該化学銅めっき液中の銅イオンの量は、0.03
モル/lト’hっだ。更に、1時間循環通液した結果、
銅イオン補給槽の該化学鋼めっき液の銅イオンの量はH o、o s oモル/lまで上昇し、また、液の酉は8
.2であった。
The composition of this solution differs from that of ordinary chemical copper plating solutions in that it does not contain copper ions. When 2 tons of this chemical steel plating solution containing no copper ions was put into a copper ion assistant and circulated through the n1 ion exchange tower at SV4 for 30 minutes, the amount of copper ions in the chemical copper plating solution was 0.03.
Mol/lto'h. Furthermore, as a result of circulating fluid for 1 hour,
The amount of copper ions in the chemical steel plating solution in the copper ion replenishment tank rose to H o, o s o mol/l, and the amount of copper ions in the chemical steel plating solution increased to 8 mol/l.
.. It was 2.

を合わせ、銅イオン0,04モル/lの化学銅めっき液
を調製し、化学鋼めっき、槽に入れ、めっき温度70℃
、めっき負荷1ttri7tで、析出銅の厚き約30μ
m を1回とする化学銅めっ@を5回連続してイ丁っだ
Prepare a chemical copper plating solution containing 0.04 mol/l of copper ions, put it into a chemical steel plating bath, and set the plating temperature to 70°C.
, with a plating load of 1ttri7t, the thickness of deposited copper is approximately 30μ
I tried chemical copper plating @ five times in a row with M once.

この5回の化学銅めっき後において、化学銅めっき液に
硫酸塩は全く認められなかった。そして、5回目の化学
銅めっきにおける析出銅の伸ひ率及び抗張力は、新しい
化学銅めっき液の場合、すなわち1回目の場合とほぼ同
一であった。、5回に及ぶ化学銅めっき反応により消耗
する銅イオンの補給は、銅イオン補給帽から、化学銅め
つき惜の傳環惰に、銅イオン補給剤の銅イ万ン濃夏の商
い化学銅めっき液を送液して行った。これと同時に、こ
の銅イオン補給槽かしの送液量と同量の化学銅めっき液
を、化学鋼めっさ憎かL:)銅イオン補給槽へ送液して
、液のバランスを保った。
After these 5 times of chemical copper plating, no sulfate was observed in the chemical copper plating solution. The elongation rate and tensile strength of the deposited copper in the fifth chemical copper plating were almost the same as in the case of a new chemical copper plating solution, that is, in the case of the first time. To replenish the copper ions consumed during the five chemical copper plating reactions, use the copper ion replenishment cap to replenish the copper ion replenisher, copper ion replenisher, copper ion replenisher. The plating solution was pumped. At the same time, the same amount of chemical copper plating solution as the amount sent to this copper ion replenishment tank is sent to the copper ion replenishment tank to maintain the balance of the solution. Ta.

なお、化学鋼めっき中に消耗する還元剤の補給は、還元
剤補佑悄から10%ホルマリン液を化アルカリ剤補給惜
から20%苛性ンーグ#g、を送液して行った。
The reducing agent consumed during chemical steel plating was replenished by sending 10% formalin solution from the reducing agent supply and 20% caustic #g from the alkaline agent supply.

このように、本発明によ扛は、従来の化学銅めっき法の
欠点である塩の蓄積を阻止することができるので、化学
銅めっき液の長寿命化、めっき皮膜の品質の向上及びめ
っきコストの低減をはかることができる。
As described above, the present invention can prevent the accumulation of salts, which is a drawback of conventional chemical copper plating methods, thereby extending the life of the chemical copper plating solution, improving the quality of the plating film, and reducing the plating cost. can be reduced.

以上、陽イオン又換衝脂全便用する実凡例を中心に説明
したが、本発明は、これらの説明によって伺ら制限され
るものではない。
Although the above description has focused on examples of using cationic or fat-converted whole stools, the present invention is not limited by these descriptions.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の一実施例を示すフローシートである、図に
おいて、1は化学めっきycii、1’は化学めっき敢
、2は銅イオン補給槽、3はイオン父換塔、13はイオ
ン夜挨樹脂、4は酸貯槽、5はアルカリ貯槽、6は銅塩
貯槽、7は純水貯槽、23は銅濃度コントローラー、2
4は廃水処理装置である。 手  続  補  正  書 1.事件の表示 昭和58年特許願第68896号 2、発明の名称 化学めっき液に金属イオンを補給する方法及び装置3、
補正をする者 事件との関係  特許出願人 11ミ    所   東京都大田区大森北1丁目1番
11号名   称   日本フ ィ ルター 株式会社
4、代 理 人 7、補正の内容 (1)特許請求の範囲については別紙のとおり(2)発
明の詳細な説明については 1、明細書第3頁第8行目ないし第10行目に「安定性
を悪化させ・・・・・抗張力の低下となる。」とあるを
「安定性を悪化させ、めっき皮膜の品質の劣化原因とな
る。」と補正する。 2、明細書第4頁第18行目ないし第20行目に[は目
的とする蓄積イオン・・・・・問題を残している。」と
あるな「は化学銅めっき液のpHが11.5以上のアル
カリ性のためにイオン交換膜の耐久性が悪く、また電気
透析槽内で銅が析出するなど、実用上多くの問題を残し
ている。」と補正する。 3、明細書第5頁第2行目ないし第4行目に「除去する
方法であるため、・・・・・存在することである−とあ
るを「除去する方法である。」と補正する。 4、明細書第5rA第15行目に「めっき反応が起り易
く」とあるを「還元反応が起り易く」と補正する。 5、明細書第8頁第4行目及び第5行目に「弱酸性陽イ
オン交換樹脂・・・・・陽イオン交換樹脂のいずれも使
用すること」とあるな「弱酸性陽イオン交換樹脂のいず
れも使用すること」と補正する。 6.明細書第8頁第13行目に[コバルト、亜鉛その他
金属」とあるを「コバルト、その他金属」と補正する。 7、明細書第11TA末行に「イオン交換樹脂の再生後
、銅塩貯槽6から、」とあるを[イオン交換樹脂の再生
後、アルカリ貯槽5からポンプP−6により、例えば4
%力性ソーダ溶液をバルブ18及びバルブ16を経由し
て、イオン交換塔3に通液し、イオン交換樹脂をNa型
とする。ついで、ポンプP−8によって、純水槽から純
水を送り、過剰の力性ソーダを洗浄した後、銅塩貯槽6
から、」と補正する。 8、明細書第12頁第8行目に「に80gの銅イオンが
」とあるを「に約809の銅イオンが」と補正する。 9、明細書第13頁第8行目ないし第9行目に「すなわ
ち、組成Cu・・・ [〕ト112.IJとあるを[す
なわち、組成、CuO,038モル/β(2,4g#り
、EDTA ・2Na0,11モル/1(40gil!
 )及びホルマリン0.06モル/1(5杼/β)で、
pl−112,IJと補正する。 10、明細書第13頁第16行目及び$17行目に「C
u  O,1モル/11 pH7・・・イオンが0.0
6モル/β増加した。」とあるをl”’ Cu O、1
モル/n(6,32#)、pH7となり、銅イオンが0
,06モル/1(3,Fht/β)増加した。」と補正
する。 11、明細書第14頁第14行目にrEDTA ・2N
a0.11モル/β、37%ホル」とあるを「EDTA
 ・2NaO,11モル/1 (40g/l)、37%
ホル」と補正する。 12、明細書第14頁第16行目に1−PEG井100
0 2011j!#!Jとあるをl’−PEC4100
015叩/IJと補正する。 13、明細書第15頁第2行目に「鋸イオンの量は、0
.03モル/1と」とあるを「銅イオンの量は、0.0
3モル/l(1,9y#りと」と補正する。 14、明細書第15頁第5行目に10.080モル/1
まで上昇し、」とあるをl’−0,080モル/l(5
,1g/jりまで上昇し、」と補正する。 15、明細書第15頁第9行目に「銅イオン0.04モ
ル/pの化学銅めっき」とあるを[銅イオン0.04モ
lし/’ff1(2,5g#りの化学銅めっき」と補正
する。 別    紙 2、特許請求の範囲 (1) 化学めっき液を、少くともその一部がめつき用
金属型である夕くとも一種の陽イオン交換樹脂又は少く
ともその一部にめっき用金属イオンが配位若しくは吸着
されている少くとも一種のキレ−) 431脂或はこれ
らの混合物で処理することにより、化学めっき液にめっ
き用金属イオンを補給することを特徴とする化学めっき
液に金属イオンを補給する方法。 (2)少くともその一部がめつき用金属型である少くと
も一種の陽イオン交換樹脂又は少くともその一部にめっ
き用金属イオンが配位若しくは吸着されている少くとも
一種のキレート樹脂或はこれらの混合物を充填し、かつ
化学めっき液収入口及び化学めっき液の金属イオン濃度
が増加しく出1」を有するイオン交換」を設けたことを
特徴とする化学めっき液に金属イオンを補給する装置。
The figure is a flow sheet showing one embodiment of the present invention. In the figure, 1 is chemical plating ycii, 1' is chemical plating ycii, 2 is copper ion replenishment tank, 3 is ion father exchange tower, and 13 is ion night dust. resin, 4 is an acid storage tank, 5 is an alkali storage tank, 6 is a copper salt storage tank, 7 is a pure water storage tank, 23 is a copper concentration controller, 2
4 is a wastewater treatment device. Procedural amendment 1. Case Description 1982 Patent Application No. 68896 2 Title of Invention Method and Apparatus for Replenishing Metal Ions to Chemical Plating Solution 3
Relationship with the case of the person making the amendment Patent applicant 11mi Address 1-11 Omori Kita, Ota-ku, Tokyo Name Nippon Filter Co., Ltd. 4 Agent 7 Contents of amendment (1) Patent claim The range is as shown in the attached sheet. (2) Detailed explanation of the invention is as follows: 1. On page 3 of the specification, lines 8 to 10, it is stated that ``It deteriorates stability...results in a decrease in tensile strength. " has been corrected to "deteriorates the stability and causes deterioration of the quality of the plating film." 2. On page 4 of the specification, lines 18 to 20, [is the target accumulated ion...problems remain. ``Because the chemical copper plating solution has an alkaline pH of 11.5 or higher, the durability of the ion exchange membrane is poor, and copper precipitates in the electrodialysis tank, leaving many practical problems. ”, he corrected himself. 3. In the second to fourth lines of page 5 of the specification, amend the statement ``Because it is a method of removal, it exists...'' to ``It is a method of removal.'' . 4. In the 15th line of No. 5rA of the specification, the phrase "Plating reaction is likely to occur" is corrected to "Reduction reaction is likely to occur." 5. On the 4th and 5th lines of page 8 of the specification, it says ``Weakly acidic cation exchange resin... Any cation exchange resin should be used.'' ``Weakly acidic cation exchange resin.'' Please use either of the above.” 6. On page 8, line 13 of the specification, the phrase "cobalt, zinc and other metals" is amended to read "cobalt and other metals." 7. At the end of No. 11 TA of the specification, there is a statement that "After the ion exchange resin is regenerated, from the copper salt storage tank 6," [After the ion exchange resin is regenerated, from the alkali storage tank 5 by pump P-6, e.g.
% strength soda solution is passed through the ion exchange tower 3 via valves 18 and 16 to convert the ion exchange resin into Na type. Next, pump P-8 sends pure water from the pure water tank to wash away excess sodium hydroxide, and then to the copper salt storage tank 6.
From,” he corrected. 8. In the 8th line of page 12 of the specification, the statement "80 g of copper ions in" is corrected to "approximately 809 copper ions in". 9. On page 13 of the specification, lines 8 and 9, it says, ``In other words, the composition Cu... EDTA ・2Na0.11 mol/1 (40 gil!
) and formalin 0.06 mol/1 (5 shuttles/β),
Correct with pl-112, IJ. 10. On page 13, line 16 and $17 of the specification, “C
u O, 1 mol/11 pH 7...Ion is 0.0
It increased by 6 mol/β. It says "l"' Cu O, 1
mol/n(6,32#), pH is 7, copper ion is 0
,06 mol/1 (3, Fht/β) increased. ” he corrected. 11. rEDTA ・2N on page 14, line 14 of the specification
a0.11 mol/β, 37% hol"
・2NaO, 11 mol/1 (40 g/l), 37%
"Hor," he corrected. 12, 1-PEG well 100 on page 14, line 16 of the specification
0 2011j! #! J and aruwo l'-PEC4100
Corrected to 015 hit/IJ. 13. In the second line of page 15 of the specification, “The amount of saw ions is 0.
.. 03 mol/1" is replaced by "The amount of copper ion is 0.0
Corrected to 3 mol/l (1,9y#lito). 14. 10.080 mol/l on page 15, line 5 of the specification
"l'-0,080 mol/l (5
, 1g/j.'' 15. On page 15, line 9 of the specification, it says "Chemical copper plating with 0.04 mol of copper ions/p". Attachment 2, Claims (1) A chemical plating solution, at least a part of which is a metal type for plating, or at least a kind of cation exchange resin or at least a part thereof. Chemical plating characterized by replenishing plating metal ions to a chemical plating solution by treating with at least one kind of 431 fat or a mixture thereof, in which plating metal ions are coordinated or adsorbed. A method of replenishing metal ions into a liquid. (2) At least one type of cation exchange resin, at least a part of which is of a metal type for plating, or at least one type of chelate resin, at least a part of which has metal ions for plating coordinated or adsorbed; An apparatus for replenishing metal ions into a chemical plating solution, which is filled with a mixture of these, and is equipped with a chemical plating solution inlet and an ion exchange device that increases the metal ion concentration of the chemical plating solution. .

Claims (1)

【特許請求の範囲】 1、化学めっき液を、少くともその一部がめつき用金属
型である少くとも一種の陽イオン交換樹脂又は少くとも
その一部にめっき用金属イオンが配位若しくは吸着さ0
ている少くとも一種のキレート樹脂或はこれらの混合物
で処理することにより、化学めっき液にめっき用金属イ
オンを補給することを特徴とする化学めっき液に金属イ
オンを補給する方法。 2、少くともその一部がめつき用金属型でるる少くとも
一種の陽イオン交換樹脂又は少くともその一部にめっき
用金属イオンが配位若しくは吸焉さnている少くとも一
種のキレート樹脂或はこれらの混合物を光唄し、かつ化
学めっき液酸人口及び化学めっき液の金属イオン濃度が
増加した溶離液出口を有するイオン交換槽を設けたこと
を特徴とする化学めっき液に金属イオンを補給するか濃
巷移装置。
[Claims] 1. A chemical plating solution is prepared by using at least one type of cation exchange resin, at least a part of which is of a metal type for plating, or at least a part of which has metal ions for plating coordinated or adsorbed. 0
A method for replenishing metal ions to a chemical plating solution, characterized in that metal ions for plating are supplied to the chemical plating solution by treating the chemical plating solution with at least one kind of chelate resin or a mixture thereof. 2. At least one cation exchange resin, at least a part of which is in the form of a metal for plating, or at least one chelate resin, at least a part of which has metal ions for plating coordinated or absorbed. replenishes metal ions to a chemical plating solution, which is characterized in that it is equipped with an ion exchange tank having a chemical plating solution acid population and an eluent outlet in which the concentration of metal ions in the chemical plating solution is increased. Or a dense transfer device.
JP6889683A 1983-04-19 1983-04-19 Method and apparatus for replenishing metal ion to chemical plating bath Pending JPS59197555A (en)

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JP6889683A JPS59197555A (en) 1983-04-19 1983-04-19 Method and apparatus for replenishing metal ion to chemical plating bath

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JP6889683A JPS59197555A (en) 1983-04-19 1983-04-19 Method and apparatus for replenishing metal ion to chemical plating bath

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JPS59197555A true JPS59197555A (en) 1984-11-09

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1803837A1 (en) * 2005-11-25 2007-07-04 Enthone, Inc. Process and apparatus for cleaning of processing solutions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1803837A1 (en) * 2005-11-25 2007-07-04 Enthone, Inc. Process and apparatus for cleaning of processing solutions
EP1803837B1 (en) 2005-11-25 2018-09-12 MacDermid Enthone Inc. Process and apparatus for cleaning of processing solutions

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