JPS59192970A - Detecting circuit for voltage variation - Google Patents

Detecting circuit for voltage variation

Info

Publication number
JPS59192970A
JPS59192970A JP6724883A JP6724883A JPS59192970A JP S59192970 A JPS59192970 A JP S59192970A JP 6724883 A JP6724883 A JP 6724883A JP 6724883 A JP6724883 A JP 6724883A JP S59192970 A JPS59192970 A JP S59192970A
Authority
JP
Japan
Prior art keywords
voltage
semiconductor element
diode bridge
power supply
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6724883A
Other languages
Japanese (ja)
Inventor
Hideki Nishikura
秀樹 西倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP6724883A priority Critical patent/JPS59192970A/en
Publication of JPS59192970A publication Critical patent/JPS59192970A/en
Pending legal-status Critical Current

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  • Measurement Of Current Or Voltage (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

PURPOSE:To detect variation in power voltage over a wide range by using a semiconductor element which varies in resistance value freely as an equivalent resistance between output terminals of a diode bridge. CONSTITUTION:The semiconductor element 1 which varies in internal resistance value freely is used as the equivalent resistance between output terminals of the diode bridge DB formed of diodes D1-D4 connected to a power source through a capacitor C1. This element 1 is controlled to increase the internal resistance of the element 1, and then the time constant determined by this resistance and capacity of the capacitor C1 increases; even when a source voltage varies slowly, a corresponding detection voltage is developed across the element 1 and rises above a reference voltage, so that a comparator 2 outputs a detection signal for the source voltage variation. Therefore, the source voltage variation such as a rise and a fall over a wide range is detected.

Description

【発明の詳細な説明】 〔技術分野1 本発明は電圧変動検出回路に関するものである[背景技
術J 第1図をま従来例を示すものであり、4個のタイオード
D1〜D4からなるダイオードづリツ、;DBと、この
タイオードブリッジDBの出力端の一端すなわちタイオ
ードD3とD4との接続点に接続した]ンヂンサC1と
の直列回路を電源に接続しである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field 1] The present invention relates to a voltage fluctuation detection circuit [Background Art J] Figure 1 shows a conventional example, in which a diode array consisting of four diodes D1 to D4 is used. A series circuit consisting of the diode bridge DB and the capacitor C1 connected to one end of the output end of the diode bridge DB, that is, the connection point between the diodes D3 and D4, is connected to the power supply.

尚、電源は直流でも交流でもよいつまたタイオードづリ
ッジDBの出力端間すなわちタイオードΩとD3との接
続点と、タイオードD2とり、との接続点との間に抵抗
Rを接続し、この抵抗Rの両端を電源の電源電圧Viの
変動出力端としている。そしてコンデンサC1と抵抗R
との嶽−分間路において、タイオードブリッジDBによ
り、電源電圧Viの変Qj分を正の′電圧を出力電圧V
oとして検出を行なっている。第2図(a)は電源電圧
Viが丘昇中の場合を示し、電源電圧Viが]ンヂンサ
C1の電圧Vcよりも大きくなりタイオードl)2とD
3が順方向となって、抵抗Rの両端に正の出力電圧Vo
を得ている。また、第2図(b)は電源電圧■1が下降
中の場合を示し、電源電圧V1の方がコンデンサC1の
電圧VOより小さくなり、タイオードDIとD4が順方
向となり、抵抗Rの両端にf切分としての正の出力電圧
を得ている。かかる場合、ゆっくりした電圧変動にも対
応するためには、clRによる時定数をかなり大きなも
のにしなければならないため、大きさ、コスト面の問題
となる。また、どれだけの電圧変動か発生すると前作す
るのか設定が難しいという問題があった。
The power source may be direct current or alternating current.Also, a resistor R is connected between the output terminals of the diode ridge DB, that is, between the connection point of the diodes Ω and D3, and the connection point of the diode D2. Both ends of R are used as fluctuation output ends of the power supply voltage Vi of the power supply. And capacitor C1 and resistor R
In the branch-to-junction path between the two, the diode bridge DB converts the change Qj of the power supply voltage Vi into a positive 'voltage' as the output voltage V.
Detection is performed as o. FIG. 2(a) shows a case where the power supply voltage Vi is rising, and the power supply voltage Vi becomes larger than the voltage Vc of the sensor C1, and the diodes l)2 and D
3 is in the forward direction, and a positive output voltage Vo is applied across the resistor R.
I am getting . In addition, FIG. 2(b) shows the case where the power supply voltage 1 is falling, and the power supply voltage V1 becomes smaller than the voltage VO of the capacitor C1, and the diodes DI and D4 become forward direction, and the voltage across the resistor R increases. A positive output voltage as f cut is obtained. In such a case, in order to cope with slow voltage fluctuations, the time constant due to clR must be made quite large, which poses problems in terms of size and cost. Another problem was that it was difficult to set the amount of voltage fluctuation that would occur before starting the previous operation.

〔発明の目的〕[Purpose of the invention]

不発1−!A/−1上述の点に鑑みて提供したものであ
って、負荷開放等にょシ入カ電源電圧が上昇したり、ま
た負荷短絡及び停電等により大刀電源電圧かド降したり
することを検出し、負荷の破損を防止することを目的と
した電圧変動検出回路を提供するものである。
Misfire 1-! A/-1 This was provided in view of the above points, and detects when the input power supply voltage increases due to load opening, etc., or when the main power supply voltage drops due to load short circuits, power outages, etc. The present invention provides a voltage fluctuation detection circuit for the purpose of preventing load damage.

[発明の開示〕 以ド、本発明の一実施例を図面により詳述する。第5図
はその具体回路図を示し、従来例の抵抗Rの代わしに半
導体素子(1)を接続したもので、他1    は従来
と同様である。(2) Ii半導体素子(1)の両端に
接続された比較器で、予め設定した基準電圧vAを旬し
、この基準電圧VAより半導体素子(1)の両端に生じ
た変動電圧の方か高い場合に検出信号を出力し、この検
出信号にてたとえばリレーなどを駆動してその接点によ
り回路を遮断するようにしである。また、半導体素子(
1)は以下のような特性を有するものを用いる。まず、
等側内部抵抗を大きくしたり、小さくしたりする制御が
可能な例えばトランジスタのような素子を用いたり、捷
た、等側内部抵抗が大きい状心から小さい状態に制御0
J′能な例えばサイリスタなどの素子、更には、素子に
かかる電圧がある値を境にして素子の内部抵抗が変化す
る例えばSUS 、SBSなどの素子を半導体素子(1
)として用いるっ しかして、電源電圧Viが上昇及び下降した場合には、
端子a −b間の正の電圧■、が発生する。その電圧V
+の値、を検出しておき、電源電圧Viが変動し負荷に
悪影響を与える変化量/\Vi以Fの基l$電圧vAと
を比較し、V1≧vAとなると電源切り離し等の対策を
施す。また、電源投入時には半導体素子(1)に制御信
号を与え、等側内部抵抗を小さくし、コンデンサC1の
充電電圧Vcを市諒電圧Vi、!:等しくなったとき、
半導体素子(1)の等側内部抵抗を非常に大きな状態と
する。また、検出を行なっている時、半導体素子(1)
の等側内部抵抗を非常に大きくすることにより、電源電
圧Viの変化がゆっくりしたものであっても、]ンヂン
サC1の充放電電圧は非常に小さなもので、コンデンサ
CIの電圧Vcの変化がなく、電源電圧V1の変化を正
a余につかむことができる。
[Disclosure of the Invention] Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings. FIG. 5 shows a specific circuit diagram thereof, in which a semiconductor element (1) is connected in place of the resistor R of the conventional example, and the other elements 1 are the same as the conventional example. (2) A comparator connected to both ends of the semiconductor element (1) sets a preset reference voltage vA, and determines whether the fluctuating voltage generated across the semiconductor element (1) is higher than this reference voltage VA. In this case, a detection signal is output, and this detection signal drives, for example, a relay, and the circuit is cut off by its contact. In addition, semiconductor elements (
For 1), a material having the following characteristics is used. first,
For example, by using an element such as a transistor that can control the equal-side internal resistance to increase or decrease, or by controlling the state where the equal-side internal resistance is large to small.
Semiconductor elements (1
) However, when the power supply voltage Vi rises and falls,
A positive voltage (2) is generated between terminals a and b. That voltage V
Detect the value of +, and compare the amount of change in the power supply voltage Vi that adversely affects the load/\Vi with the base l$ voltage vA of F. If V1≧vA, take measures such as disconnecting the power supply. give Furthermore, when the power is turned on, a control signal is given to the semiconductor element (1) to reduce the internal resistance on the equal side and change the charging voltage Vc of the capacitor C1 to the commercial voltage Vi, ! : When they are equal,
The isolateral internal resistance of the semiconductor element (1) is brought into a very large state. Also, when performing detection, the semiconductor element (1)
By making the equal-side internal resistance of the capacitor CI very large, even if the power supply voltage Vi changes slowly, the charging/discharging voltage of the capacitor C1 is very small, and there is no change in the voltage Vc of the capacitor CI. , it is possible to grasp changes in the power supply voltage V1 to a greater degree.

第4図は他の実施例を示し、抵抗Rと半導体素子(1)
との直列回路をタイオードブリッジDBの出力端間に接
続したものであり、抵抗Rの両端から″電圧変動を検出
している。ここで半導体素子(1)の性質としては、第
5図の特性図に示すように、素子にかかる電圧がある値
を境にして素子の等側内部抵抗が変化するものを用いて
いる。しかして、電源電圧Viが上昇した場合、及び下
降した場合、その変化した電圧△Viが半導体素子(1
)Kかかるその△Viが1△V11≧vBとなると、半
導体素子(1)の等側内部抵抗が非常に小さくなり、そ
の結果端子C−dollに正の電圧v、=l△■1:が
かかる。この電圧を検出して比較器(2)によりその検
出信号で電源切り離し等の負荷保護対策を施す。
FIG. 4 shows another embodiment, in which the resistor R and the semiconductor element (1)
A series circuit is connected between the output terminals of the diode bridge DB, and voltage fluctuations are detected from both ends of the resistor R.The properties of the semiconductor element (1) are as shown in Fig. 5. As shown in the characteristic diagram, an element is used in which the equal-side internal resistance of the element changes when the voltage applied to the element reaches a certain value.Therefore, when the power supply voltage Vi increases or decreases, its The changed voltage △Vi is applied to the semiconductor element (1
)K multiplied by △Vi becomes 1△V11≧vB, the equal-side internal resistance of the semiconductor element (1) becomes extremely small, and as a result, a positive voltage v, =l△■1: is applied to the terminal C-doll. It takes. This voltage is detected and a comparator (2) uses the detection signal to take load protection measures such as disconnecting the power supply.

[発明の効果] 本発明はL述のように、タイオードブリッジとこのタイ
オードブリッジの入力側の一端と接続したコンデンサと
の直列回路を電源に接続し、タイオードブリッジの出力
端間に等側内部抵抗を印加電圧や制御信号により可変自
在とした半導体素子を接続し、と配電源の電圧変動によ
り前記半導体素子を介してタイオードブリッジの出力端
間に生じる電圧を予め設定した基準電圧とを比較して電
圧変動検出信号を出力する比較器を設けたから、′屯#
電圧が上昇したり、下降したりした場合、いずれの変動
もタイオードブリッジの順方向側のタイオードにより正
の電圧にて、かつ同じ場所にて検出することができ、そ
のため検出部を先光することができ、比較器からの検出
信号にて電源切り離しなどの負荷保護対策ができる効果
を奏する7、また、半醇体素子の等側内゛部抵抗を制唾
することにより、検出を行なっているときに半導体素子
の等側内部抵抗を非常に大きくすることで、電源電圧の
変化がゆっくりしたものであっても、コンデンサの充放
電電流は非常に小さなもので、コンデンサの電圧の変化
がなく、電源電圧の変化を正確につかむことができ、し
かもコンデンサの容量も小さくできる効果を奏する。更
に、電源投入時、電圧変動の検出を行なっている場合、
半導体素子の等側内部抵抗を非常に小さくすることによ
り、コンデンサの充電電圧を電源電圧と即応的に等しく
することができ、検出能力の向Eを計れる効果を奏する
[Effects of the Invention] As described in L, the present invention connects a series circuit of a diode bridge and a capacitor connected to one end of the input side of the diode bridge to a power supply, and connects an equal circuit between the output ends of the diode bridge. A semiconductor element whose side internal resistance can be varied by an applied voltage or a control signal is connected, and the voltage generated between the output terminals of the diode bridge via the semiconductor element due to voltage fluctuations in the distribution power source is set to a preset reference voltage. Since we installed a comparator that compares and outputs a voltage fluctuation detection signal,
If the voltage increases or decreases, both fluctuations can be detected at the positive voltage and at the same location by the diode on the forward side of the diode bridge, thus pre-lighting the detector. The detection signal from the comparator can be used to take load protection measures such as disconnecting the power supply. By making the equal-side internal resistance of the semiconductor element very large when the power supply voltage is in , it is possible to accurately detect changes in the power supply voltage, and the capacitance of the capacitor can also be reduced. Furthermore, if voltage fluctuations are detected when the power is turned on,
By making the isolateral internal resistance of the semiconductor element very small, the charging voltage of the capacitor can be immediately made equal to the power supply voltage, which has the effect of improving the detection ability.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来例の回路図、第2図(α)〔b)せ秦シ診
tよ同一ヒの説明図、第5図は本発明の一実施例の回路
図、第4図は同上の他の実施例の回路図、第5凶tま同
Eの半導体素子の特性図である。 (1)は半導体素子、(2) td比較器、DBはタイ
オードラリッジ、C1はコンデンサである。
Fig. 1 is a circuit diagram of a conventional example, Fig. 2 (α) [b) is an explanatory diagram of the same example as in the previous example, Fig. 5 is a circuit diagram of an embodiment of the present invention, and Fig. 4 is the same as above. FIG. 5 is a circuit diagram of another embodiment of the present invention, and a characteristic diagram of the semiconductor element of the fifth embodiment. (1) is a semiconductor element, (2) is a td comparator, DB is a tie ridge, and C1 is a capacitor.

Claims (1)

【特許請求の範囲】[Claims] (1)タイオードブリッジとこのタイオードブリッジの
入力側の一端と接続したコンデンサとの直列回路を電源
に接続し、タイオードブリッジの出力端間に等側内部抵
抗を印加電圧や制御信号によりn丁度自在とした半導体
素子を接続し、上記電源の電圧変動により前記半導体素
子を介してタイオードブリッジの出力端間に生じる電圧
を予め設定した基準電圧とを比較して電圧変動検出信号
を出力する比較器を設けて成る電圧f妨検出回路。
(1) Connect a series circuit of a diode bridge and a capacitor connected to one end of the input side of this diode bridge to a power supply, and set an equal internal resistance between the output terminals of the diode bridge by applying a voltage or a control signal. Connect a semiconductor element that has been made freely adjustable, and compare the voltage generated between the output terminals of the diode bridge via the semiconductor element due to the voltage fluctuation of the power supply with a preset reference voltage to output a voltage fluctuation detection signal. A voltage f disturbance detection circuit comprising a comparator.
JP6724883A 1983-04-15 1983-04-15 Detecting circuit for voltage variation Pending JPS59192970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6724883A JPS59192970A (en) 1983-04-15 1983-04-15 Detecting circuit for voltage variation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6724883A JPS59192970A (en) 1983-04-15 1983-04-15 Detecting circuit for voltage variation

Publications (1)

Publication Number Publication Date
JPS59192970A true JPS59192970A (en) 1984-11-01

Family

ID=13339427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6724883A Pending JPS59192970A (en) 1983-04-15 1983-04-15 Detecting circuit for voltage variation

Country Status (1)

Country Link
JP (1) JPS59192970A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953765A (en) * 1996-02-21 1999-09-21 Aisin Seiki Kabushiki Kaisha Sanitary device having commonly driven washing and drying devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953765A (en) * 1996-02-21 1999-09-21 Aisin Seiki Kabushiki Kaisha Sanitary device having commonly driven washing and drying devices

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