JPS59191840U - Gate turn-off thyristor protection circuit - Google Patents
Gate turn-off thyristor protection circuitInfo
- Publication number
- JPS59191840U JPS59191840U JP8588983U JP8588983U JPS59191840U JP S59191840 U JPS59191840 U JP S59191840U JP 8588983 U JP8588983 U JP 8588983U JP 8588983 U JP8588983 U JP 8588983U JP S59191840 U JPS59191840 U JP S59191840U
- Authority
- JP
- Japan
- Prior art keywords
- gate turn
- protection circuit
- thyristor
- diode
- thyristor protection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Protection Of Static Devices (AREA)
- Power Conversion In General (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図、第３図は、従来例を示すスナバ回路図、第２図
は第１図の動作を示す図、第４図は本考案の一実施例を
示す回路図、第５図は第４図の一実装構造例を示す図で
ある。
１・ｒ−ＧＴ（＞、 ２・・・ダイオード、３・・・抵
抗、４・・・コンデンサ、５．６・・・フィン。1 and 3 are snubber circuit diagrams showing a conventional example, FIG. 2 is a diagram showing the operation of FIG. 1, FIG. 4 is a circuit diagram showing an embodiment of the present invention, and FIG. FIG. 4 is a diagram showing an example of a mounting structure of FIG. 4; 1.r-GT (>, 2...diode, 3...resistor, 4...capacitor, 5.6...fin.
Claims (1)
トターンオフサイリスクの周囲に最適な間隔に配置し、
前記ダイオードをゲートターンオフサイリスタの少なく
とも一方の極の冷却フィン上にゲートターンオフサイリ
スタを囲むように取付はダイオードとコンデンサとの接
続点を互いに全て結び、ダイオードと並列に少なくとも
１組の抵抗を接続したことを特徴とするゲートターンオ
フサイリスタの保護回路。Multiple series-connected circuits of diodes and capacitors are arranged at optimal intervals around the gate turn-off risk.
The diode is mounted on the cooling fin of at least one pole of the gate turn-off thyristor so as to surround the gate turn-off thyristor, and all connection points of the diode and the capacitor are connected to each other, and at least one set of resistors is connected in parallel with the diode. A gate turn-off thyristor protection circuit featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8588983U JPS59191840U (en) | 1983-06-07 | 1983-06-07 | Gate turn-off thyristor protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8588983U JPS59191840U (en) | 1983-06-07 | 1983-06-07 | Gate turn-off thyristor protection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59191840U true JPS59191840U (en) | 1984-12-19 |
Family
ID=30215848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8588983U Pending JPS59191840U (en) | 1983-06-07 | 1983-06-07 | Gate turn-off thyristor protection circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59191840U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018170830A (en) * | 2017-03-29 | 2018-11-01 | 東芝三菱電機産業システム株式会社 | Power conversion device |
-
1983
- 1983-06-07 JP JP8588983U patent/JPS59191840U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018170830A (en) * | 2017-03-29 | 2018-11-01 | 東芝三菱電機産業システム株式会社 | Power conversion device |
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