JPS59171908A - How to create a thin film optical structure - Google Patents
How to create a thin film optical structureInfo
- Publication number
- JPS59171908A JPS59171908A JP58046703A JP4670383A JPS59171908A JP S59171908 A JPS59171908 A JP S59171908A JP 58046703 A JP58046703 A JP 58046703A JP 4670383 A JP4670383 A JP 4670383A JP S59171908 A JPS59171908 A JP S59171908A
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- JP
- Japan
- Prior art keywords
- waveguide
- substrate
- lens
- light
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は光導波路、導波路レンズ静の薄膜光学構体の作
成方法に1コするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention is directed to a method for producing a thin film optical structure such as an optical waveguide or a waveguide lens.
従来、光導波路を形成するには、一般にマスクを用いて
、パクーノイζ作成し、後で拡散炉によりアニールする
方法等がある。一方、上記のようなマスク技Ni:j’
に用いないで、レーザービームによって直接基板上へ光
導波路を形成する検討〔前 肇、生澤芳昭、山田正良、
山本恵−1阿部謙治「CWレーザー走査による光導波路
形成への実験的検討」′82年春期応物予稿集、 2a
−F−9、、P、 195 :]もなされテイル。Conventionally, in order to form an optical waveguide, there is a method in which a mask is generally used to create a Pakunoi ζ, and then annealing is performed in a diffusion furnace. On the other hand, the above mask technique Ni:j'
Study on forming an optical waveguide directly on a substrate using a laser beam without using a laser beam [Hajime Mae, Yoshiaki Ikuzawa, Masayoshi Yamada,
Megumi Yamamoto-1 Kenji Abe "Experimental study on optical waveguide formation by CW laser scanning"'82 Spring Applied Physics Proceedings, 2a
-F-9,,P, 195: ] also made tail.
光導波路部の屈折率および上記光導波路の厚み分布を制
御することは、伝搬モードを所定のものに限定する上も
しくは、光導波路に形成された弾性表面波との相互作用
を向上する上等で重要である。又、光導波路に限らず、
光導波路レンズの如き機能素子を形成する上でも屈折率
及び厚み分布を制御することは重要である。Controlling the refractive index of the optical waveguide portion and the thickness distribution of the optical waveguide is effective in limiting the propagation mode to a predetermined one or improving the interaction with the surface acoustic wave formed in the optical waveguide. is important. In addition, not only optical waveguides,
Controlling the refractive index and thickness distribution is also important when forming functional elements such as optical waveguide lenses.
本発明の目的は、前記光導波路部いは導波路レンズ等の
薄膜光学構体が所定の値通りに正確に作成することが可
能な作成方法を提供することにある。An object of the present invention is to provide a manufacturing method that allows thin film optical structures such as the optical waveguide section or waveguide lens to be manufactured accurately to predetermined values.
本発明に係る作成方法に於いては、光ビームを基板上に
照射し、該照射した部分をイオン交換することによシ屈
折率を変化させる薄膜光学構体の作成方法に着目し、と
の構体を作成する為の光ビームの反射光或いは透過光を
モニターすることによシ、作成中の構体の様子を検知し
、この検知信号に基づいて例えば光ビームを照射する装
置を制御することにより上記目的を達成せんとするもの
である。The method of manufacturing a thin film optical structure according to the present invention focuses on a method of manufacturing a thin film optical structure in which the refractive index is changed by irradiating a light beam onto a substrate and ion-exchanging the irradiated portion. By monitoring the reflected or transmitted light of the light beam used to create the structure, the state of the structure being created can be detected, and based on this detection signal, for example, the device that irradiates the light beam can be controlled. It is an attempt to achieve a goal.
第1図は本発明に係る作成方法を使用した薄膜光学構体
の製造装置の一実施例を示す図である。第1図に於いて
、1は基板、2は融液、3はレーザー光源、4および5
はレンズ、6はビームスグリツタ−17および8は検出
器、9は容器、10はヒーター、11は容器9にあけら
れた光に対する窓である。基板1としては、圧電性のす
ぐれた強誘電体結晶であるL lNbO5rLiTaO
s結晶や、BH3等のガラスでも良い。2としてはI(
NOs 、H2SO4、Mg (NOs )t 6 H
2O,Ce’HsCOOH。FIG. 1 is a diagram showing an embodiment of a thin film optical structure manufacturing apparatus using the manufacturing method according to the present invention. In FIG. 1, 1 is a substrate, 2 is a melt, 3 is a laser light source, 4 and 5
1 is a lens, 6 is a beam sinter, 17 and 8 are detectors, 9 is a container, 10 is a heater, and 11 is a window opened in the container 9 for light. The substrate 1 is made of LlNbO5rLiTaO, which is a ferroelectric crystal with excellent piezoelectricity.
S crystal or glass such as BH3 may also be used. 2 is I(
NOs, H2SO4, Mg (NOs)t6H
2O, Ce'HsCOOH.
TzNOs 、 AgNOs 、 KNOs 、 Na
NOs等があげられる。光源としては、基板材料に対し
て吸収率が高い波長のレーザーが望ましく、たとえばA
r 、 He −Ne 。TzNOs, AgNOs, KNOs, Na
Examples include NOs. As a light source, it is desirable to use a laser with a wavelength that has a high absorption rate for the substrate material, such as A
r, He-Ne.
YAG 、 CO2レーザー等があげられる。レーザー
光源3から出射した光束12はビームスプリッタ−6を
通りレンズ4によシ一様強度をもつ光束13に拡大され
る。光束13は、融液2の中に浸だされた基板1の表面
全体に照射され、一部は反射し、一部は透過する。反射
光はレンズ4の方へもどシ、ビームスグリツタ−6で検
出器7へ導かれる。一方、基板を透過した光束はレンズ
5でしぼられ検出器8へ入射する。Examples include YAG and CO2 lasers. A beam 12 emitted from the laser light source 3 passes through a beam splitter 6 and is expanded by a lens 4 into a beam 13 having uniform intensity. The light beam 13 is irradiated onto the entire surface of the substrate 1 immersed in the melt 2, with some of it being reflected and some of it being transmitted. The reflected light is returned to the lens 4 and guided to the detector 7 by the beam sinter 6. On the other hand, the light beam transmitted through the substrate is squeezed by the lens 5 and enters the detector 8.
基板1の表面は、光束13にょシ局所的に加熱され、イ
オン交換が進み、表面近傍の屈折率が増大して導波路が
形成される。有害性ガスの発生率は、融液全体を加熱す
る場合に比べて低くおさえられる。又、熱バイアスとし
て、ヒーター1oによシ融液をあらがじめ適度に熱する
ことを併用しても差しつがえない。前記原理によ9表面
の屈折率が変化すると、光束13の基板表面上での反射
率および透過率が変化するので検出器7もしくは8で反
射光又は透過光の光強度の変動を観測すれば、その時点
での導波路の状態がモニターできる。The surface of the substrate 1 is locally heated by the light beam 13, ion exchange progresses, the refractive index near the surface increases, and a waveguide is formed. The rate of generation of harmful gases is kept lower than when the entire melt is heated. Furthermore, as a thermal bias, it is also possible to use the heater 1o to appropriately heat the melt in advance. According to the above principle, when the refractive index of the surface 9 changes, the reflectance and transmittance of the light beam 13 on the substrate surface change, so if the detector 7 or 8 observes the fluctuation in the light intensity of the reflected light or transmitted light, , the state of the waveguide at that point can be monitored.
前記導波路が所定の状態に形成された時の、光ビームの
反射光或いは透過光のモニター光の強度を予め計算又は
実験で知っておけば、前記モニターからの(1号を観察
することにより正確な値の導波路を作成することが可能
である。When the waveguide is formed in a predetermined state, if the intensity of the reflected light of the light beam or the transmitted light of the monitor light is known in advance by calculation or experiment, the intensity of the monitor light from the monitor (No. 1) can be determined by observing It is possible to create waveguides with precise values.
上述した実施レリでは、融液中に浸した基板に光ビーム
を照射して導波路を作成する場合について示したが、イ
オン穏を形成する固体の材料を基板上に設け、該イオン
種を光ビームで照射して基板表面のイオン交換を行Δう
一鴨合に於いても、本願の発明は有効である。In the above implementation example, a waveguide was created by irradiating a light beam onto a substrate immersed in a melt, but a solid material that forms ion molecules is provided on the substrate, and the ion species are exposed to light. The invention of the present application is also effective in the case of ion exchange on the substrate surface by beam irradiation.
第2図は、本発明に係る作成方法を使用して薄膜光学構
体の一例である導波路レンズを製造する装置の一実施例
を示す図で、第1圀と同じ番号を付した部材は同一の部
拐を表わす。第2図に於いて、14は光走査装置であシ
、ガルバノミラ−、ポリゴンミラー等の機械的偏向器と
該偏向器からの走を光束15を基板上に結像させる走査
用レンズより成る。尚、機械的偏向器に代えて音響光学
偏向素子、′飄気光学偏向素子等の物理光学的偏向器を
使用しても良い。光走査装置14から基板1に入射する
走査光束15は、基板1に垂直に入射することが望まし
く、この様な場合には光偏向器の編向作用点、即ち光源
3からの光束12を偏向する点を走査用レンズの瞳位置
と合致させる、いわゆるテレセントリック構成を取る。FIG. 2 is a diagram showing an embodiment of an apparatus for manufacturing a waveguide lens, which is an example of a thin film optical structure, using the manufacturing method according to the present invention, in which members given the same numbers as in the first section are the same. represents the kidnapping of In FIG. 2, reference numeral 14 denotes an optical scanning device, which is composed of a mechanical deflector such as a galvano mirror or a polygon mirror, and a scanning lens that focuses the beam 15 from the deflector onto the substrate. Incidentally, instead of the mechanical deflector, a physical optical deflector such as an acousto-optic deflector or an air-optical deflector may be used. It is desirable that the scanning light beam 15 entering the substrate 1 from the optical scanning device 14 is perpendicularly incident on the substrate 1. In such a case, the light beam 12 from the light source 3 is deflected at the point of action of the optical deflector, that is, the light beam 12 from the light source 3 is deflected. A so-called telecentric configuration is adopted in which the point at which the image is displayed coincides with the pupil position of the scanning lens.
尚、対査光東15I′i、基板1に斜入射しても何ら差
しつかえない。It should be noted that there is no problem even if the beam is obliquely incident on the counter light east 15I'i and the substrate 1.
第2図に示す如く、レーザー光海3がら出射した光線1
2けビームスプリッタ−6を通過して、光走査装置14
にょシ基板1の表面を走査する。走査光束15の反射光
は、再びビームスプリッタ−6を通シ、検出器7にはい
る。一方、前記走査光束15の透過光は窓11を通シ、
検。As shown in Fig. 2, the light beam 1 emitted from the laser light sea 3
After passing through the 2-digit beam splitter 6, the optical scanning device 14
The surface of the substrate 1 is scanned. The reflected light of the scanning light beam 15 passes through the beam splitter 6 again and enters the detector 7. On the other hand, the transmitted light of the scanning light beam 15 passes through the window 11,
Inspection.
用益8に導ひかれる。走査光束15が照射され念基板1
0表面は局所的に加熱され、イオン交換が進み、表面近
傍の屈折率が増大する。前記走査光束15を基板に照射
する時間を増加させると、それにつれてイオン交換が生
じる深さも深くなる。このように光照射箇所の屈折率と
イオン拡散厚が変化すると、走査光束15の基板表面上
での反射率および透過率が変化するので、検出器7もし
くは8を用いて光強度の変動を観測すればその時点での
前記光照射箇所の状態がモニターできる。Guided by Usufruct 8. The scanning light beam 15 is irradiated onto the optical substrate 1.
The 0 surface is locally heated, ion exchange progresses, and the refractive index near the surface increases. As the time for irradiating the substrate with the scanning light beam 15 increases, the depth at which ion exchange occurs also increases. If the refractive index and ion diffusion thickness of the light irradiation area change in this way, the reflectance and transmittance of the scanning light beam 15 on the substrate surface will change, so use the detector 7 or 8 to observe fluctuations in the light intensity. Then, the state of the light irradiated area at that point can be monitored.
上記現象を利用して、ルネブルグレンズを作製するだめ
には、以下に示す光走査を行なえばよい。第3図に示す
如く、同心円状に光走査を行ない、レンズ中心部から周
辺部に進むにつれ、同一走査軌道16上での走査回数を
減少させる。In order to fabricate a Luneburg lens by utilizing the above phenomenon, the following optical scanning may be performed. As shown in FIG. 3, optical scanning is performed concentrically, and the number of scans on the same scanning trajectory 16 decreases as the lens progresses from the center to the periphery.
又、レンズ以外の部分は、走査回数を一定にして、プラ
ナ−型光導波路が形成される。走査光線の走査ピッチ幅
鵞は、走査光束の強度分布が矩形の場合、第4図に示す
如く、光束幅となる。Further, in the portion other than the lens, a planar optical waveguide is formed by keeping the number of scans constant. When the intensity distribution of the scanning light beam is rectangular, the scanning pitch width of the scanning light beam becomes the light beam width as shown in FIG.
又、上記強度分布がガウス型の場合は、第5図に示す如
く、走査光束を重ね合せた時に強度分布が一様になるよ
うに走査ピッチ幅dが決められる。上記走査方法によシ
、第6図に示す如く、基板表面に対して垂直方向のイオ
ン拡散層17の分布は、レンズ中心部で深く、周辺部に
向うにつれて薄くなり、レンズ以外の部分では一定にな
る。所定の焦点距離のレンズに必要とされる上記イオン
拡散層の厚み分布は、Southweffの文献〔J
、Opt 、 Soc 、Am、 67 、1010(
1977))に記載されている数式によシ計算される。When the intensity distribution is Gaussian, the scanning pitch width d is determined so that the intensity distribution becomes uniform when the scanning light beams are superimposed, as shown in FIG. According to the above scanning method, as shown in FIG. 6, the distribution of the ion diffusion layer 17 in the direction perpendicular to the substrate surface is deep at the center of the lens, becomes thinner toward the periphery, and is constant in areas other than the lens. become. The thickness distribution of the above-mentioned ion diffusion layer required for a lens of a predetermined focal length can be found in the document by Southweff [J
, Opt, Soc, Am, 67, 1010 (
1977)).
又、走査方法は、同心円状に走査するものに限定される
ものではなく、第7図に示す如く、直線状に走査しても
良い。18は走査光束の軌跡で、レンズ以外の部分に対
しては等速で走査を行ない、レンズ内部に対しては、必
要とされるイオン拡散層の厚さに応じて、走査速度を変
化させる。その結果、第6図に示す如き、イオン拡散層
の厚み分布が形成されればよい。Furthermore, the scanning method is not limited to concentric scanning, but may also be linear scanning as shown in FIG. Reference numeral 18 denotes a trajectory of a scanning light beam, which scans parts other than the lens at a constant speed, and changes the scanning speed to the inside of the lens depending on the required thickness of the ion diffusion layer. As a result, the thickness distribution of the ion diffusion layer as shown in FIG. 6 may be formed.
第6図に示す如きイオン拡散層の分布をもつ光導波路レ
ンズは、凸レンズとなる。しかし、本発明の方法によれ
ば、凹レンズ作用をする光導波路レンズも容易に作成で
きる。第8図は、凹レンズ作用をするモードインデック
ス型光導波路レンズのイオン拡散層の厚み分布19を示
したもので、イオン拡散層の厚みはレンズの中心でもつ
とも薄く、レンズ周辺部に向うにつれ厚くなシ、レンズ
以外の部分では、一定となる。An optical waveguide lens having a distribution of ion diffusion layers as shown in FIG. 6 becomes a convex lens. However, according to the method of the present invention, an optical waveguide lens that acts as a concave lens can also be easily created. Figure 8 shows the thickness distribution 19 of the ion diffusion layer of a mode index type optical waveguide lens that acts as a concave lens.The thickness of the ion diffusion layer is thin at the center of the lens, and becomes thicker toward the periphery of the lens. It remains constant for parts other than the lens.
前回の凸レンズの場合と同様に上記凹レンズ作用をする
光導波路レンズを作成するだめの光走査方法は、同心円
状でも直線状の走査でも良く、走査回数と走査速度を適
尚に調節することによシ、第8図のイオン拡散層の厚み
分布が得られる。As in the case of the convex lens described above, the optical scanning method for creating the optical waveguide lens that acts as a concave lens can be either concentric circular or linear scanning, and can be achieved by appropriately adjusting the number of scans and the scanning speed. The thickness distribution of the ion diffusion layer shown in FIG. 8 is obtained.
上記実施例では、基板を照射する光束を上方から照射す
る場合を示した。然しなから、融液によっては、光束に
よシネ所望のガスを発生させる場合があり、斯様な場合
には容器9に前記ガスを閉鎖する為のふたを必要とする
場合が生じる。この様な場合は、このふたに透明な窓を
設けて光束を入射させることが出来るが、前記不所望の
ガスによシこのふたが曇ることが生じる場合には、光束
を容器9の側面或いは底面に設けた透明窓から入射する
ことが望ましい。In the above embodiment, the case where the light beam that irradiates the substrate is irradiated from above is shown. However, depending on the melt, a desired gas may be generated by the light beam, and in such a case, the container 9 may require a lid to close off the gas. In such a case, a transparent window can be provided on the lid to allow the light beam to enter. However, if the lid is fogged due to the undesired gas, the light beam can be directed to the side of the container 9 or It is desirable that the light enters through a transparent window provided on the bottom.
以上述べた様に本発明に係る作成方法に於いては、作成
中の薄膜光学構体の状態をリアル・タイムでモニター出
来る為に、例えば光導波路の作成に際しては、励起する
モードの数を制御することや、弾性表面波との相互作用
を強くする導波路厚に制御することが可能である。As described above, in the fabrication method according to the present invention, the state of the thin film optical structure being fabricated can be monitored in real time, so for example, when fabricating an optical waveguide, the number of modes to be excited can be controlled. In addition, it is possible to control the waveguide thickness to strengthen the interaction with surface acoustic waves.
更に、本発明に係る作成方法に於いては、光走査法によ
多形成する光導波路レンズの様な場合には、導波路レン
ズ作成用光ビーム以外の光束を使用してモニターするの
では、光ビームで走査した位置を正確にモニターするこ
とは困難であり、またリアルタイムでモニターすること
も困難である。従って本発明の如く、走査用光束の反射
光或いは透過光をモニター光として利用することは有効
である。Furthermore, in the manufacturing method according to the present invention, in the case of optical waveguide lenses formed by multiple optical scanning methods, it is difficult to monitor using a light beam other than the light beam for creating the waveguide lenses. It is difficult to accurately monitor the position scanned by the light beam, and it is also difficult to monitor in real time. Therefore, it is effective to use the reflected light or transmitted light of the scanning light beam as monitor light as in the present invention.
更に、本発明に係る作成方法に於いては、イオン拡散層
の深さを自由に制御することが可能でめるので、導波路
レンズの開口数を広範囲な値の中より選ぶことが出来る
ものである。Furthermore, in the manufacturing method according to the present invention, the depth of the ion diffusion layer can be freely controlled, so the numerical aperture of the waveguide lens can be selected from a wide range of values. It is.
第1図及び第2図は各々、本発明に係る作成方法を使用
した薄膜光学構体の製造装置の一実施例を示す図、第3
図は第2図で示す装置で導波路レンズを形成する場合の
光走査の一実施例を示す図、第4図及び第5図は各々、
第2図に示す装置に於いて、走査線のピッチ幅を説明す
る為の図、第6図は正の屈折率を有する導波路レンズの
断面形状を示す図、第7図は第2図で示す装置で導波路
レンズを形成する場合の光走査の他の実施例を示す図、
第8図は負の屈折率を有する導波路レンズの断面の形状
を示す図。
1・・・基板、2・融液、3・・・レーザー光源、4.
5・・レンズ、6・・ビームスフリツタ−17,8・・
・光検知器、9・・・容器、10・・・ヒーター、11
・・・窓、12.13・・・光束、14・・・光走査装
置、15・・走査光束。
出願人 キャノン株式会社
?−3ブ L二4
83固
イ
6
第4に
箔50FIG. 1 and FIG. 2 are a diagram showing an embodiment of a manufacturing apparatus for a thin film optical structure using the manufacturing method according to the present invention, and FIG.
The figure shows an example of optical scanning when forming a waveguide lens using the apparatus shown in FIG. 2, and FIGS. 4 and 5 respectively.
In the apparatus shown in Fig. 2, a diagram for explaining the pitch width of the scanning line, Fig. 6 is a diagram showing the cross-sectional shape of a waveguide lens having a positive refractive index, and Fig. 7 is a diagram for explaining the pitch width of the scanning line. A diagram showing another example of optical scanning when forming a waveguide lens with the apparatus shown in FIG.
FIG. 8 is a diagram showing the cross-sectional shape of a waveguide lens having a negative refractive index. 1... Substrate, 2. Melt, 3... Laser light source, 4.
5...Lens, 6...Beams fritter-17, 8...
・Photodetector, 9... Container, 10... Heater, 11
...Window, 12.13...Light flux, 14...Light scanning device, 15...Scanning light flux. Applicant: Canon Corporation? -3 B L2 4 83 Hard A 6 Fourth, Foil 50
Claims (1)
照射した基板部分をイオン交換することにより屈折率を
変化させ光導波路、導波路レンズ等の薄膜光学構体を作
成する方法に於いて、前記基板上に照射される光ビーム
の反射又は透過光束をモニターし、該モニターした情報
に基づいて基板上に作成される薄膜光学構体の構成を制
御する事を特徴とする薄膜光学構体の作成方法。(1) In the method of creating a thin film optical structure such as an optical waveguide or a waveguide lens by irradiating an original beam onto a substrate and changing the refractive index by ion-exchanging the substrate portion irradiated with the beam, A method for producing a thin film optical structure, comprising monitoring the reflected or transmitted light flux of a light beam irradiated onto a substrate, and controlling the configuration of the thin film optical structure produced on the substrate based on the monitored information.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58046703A JPS59171908A (en) | 1983-03-19 | 1983-03-19 | How to create a thin film optical structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58046703A JPS59171908A (en) | 1983-03-19 | 1983-03-19 | How to create a thin film optical structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59171908A true JPS59171908A (en) | 1984-09-28 |
Family
ID=12754724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58046703A Pending JPS59171908A (en) | 1983-03-19 | 1983-03-19 | How to create a thin film optical structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59171908A (en) |
-
1983
- 1983-03-19 JP JP58046703A patent/JPS59171908A/en active Pending
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