JPS59171045A - Member for recording information - Google Patents

Member for recording information

Info

Publication number
JPS59171045A
JPS59171045A JP58044227A JP4422783A JPS59171045A JP S59171045 A JPS59171045 A JP S59171045A JP 58044227 A JP58044227 A JP 58044227A JP 4422783 A JP4422783 A JP 4422783A JP S59171045 A JPS59171045 A JP S59171045A
Authority
JP
Japan
Prior art keywords
layer
recording
substrate
parylene
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58044227A
Other languages
Japanese (ja)
Inventor
Motoyasu Terao
元康 寺尾
Yasushi Miyauchi
靖 宮内
Nobuhiro Tokuyado
徳宿 伸弘
Shinkichi Horigome
堀篭 信吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58044227A priority Critical patent/JPS59171045A/en
Publication of JPS59171045A publication Critical patent/JPS59171045A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24314Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24316Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2533Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/256Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers improving adhesion between layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B7/2572Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials
    • G11B7/2575Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials resins

Abstract

PURPOSE:To obtain a member for recording information which has good recording and reproducing characteristics and can be preserved for a long time by forming the thin film on a substrate into >=2 layers and providing a specific layer as at least one layer thereof. CONSTITUTION:Grooves for tracking are formed on the surface of an acrylic resin substrate 1 and after a layer 2 (about 600nm thickness) of a ''Parylene N'', a layer 3(50nm) composed of Sb2Se3, a layer 4(50nm) composed of Bi40Te45Se15 and a layer 5(600nm) of ''Parylene N'' are successively deposited by evaporation thereon, then a layer 6(2mum) of PMMA is coated thereon. Two sheets of such discs are stuck together by means of a self-adhesive agent 7. Recording of information by light is accomplished by utilizing the change in the atomic arrangement of the layers 3 and 4. Since the layer 2 of the org. material (''Parylene N'') having >=350 deg.C b.p. is provided, the reproducing characteristic is improved and the long-term preservation is made possible.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明はレーザー光等の記録用ビームによって所定の基
板上に設けられた記録用薄膜に、たとえ゛ば映像や音声
などのアナログ信号をFM変調したものや、たとえば電
子計算機のデータや、ファクシミリ信号などのディジタ
ル情報を、リアルタイムで記録することを可能とする記
録用部材に関するものである。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention applies FM modulation of analog signals such as video and audio to a recording thin film provided on a predetermined substrate using a recording beam such as a laser beam. The present invention relates to a recording member that makes it possible to record in real time digital information such as electronic computer data and facsimile signals.

〔発明の背景〕[Background of the invention]

上記の記録用薄膜として、Te0x(0<X<2ン膜や
S b+ S esとBi2Te3などのTek主とし
て含む材料との二量層が知られている。これらの記録膜
では、少なくともTe0X  I!またはSb2Se3
層が結晶化などの原子配列変化を起こすか、二つの層が
相互に拡散する、化合物を形成する、層間あるいはいず
れかの層内、あるいけ基板との間に気泡が形成される、
記録膜が変形する、などのメカニズムのうちのいずれか
一つ、あるいは二つ以上の組合わせで記録が行なえる。
As the above-mentioned recording thin film, a Te0x (0<X<2 film) and a dual layer of a material mainly containing Tek such as S b+ S es and Bi2Te3 are known. In these recording films, at least Te0x I! or Sb2Se3
A layer undergoes an atomic arrangement change such as crystallization, two layers diffuse into each other, a compound is formed, or air bubbles form between or within any layer or with the substrate.
Recording can be performed using one or a combination of two or more mechanisms such as deformation of the recording film.

これらの場合、通常は記録した部分の反射率は記録前に
比べて高くなる。しかし記録膜が過度に変形したり穴が
形成された場合には反射率の変化は逆方向になるのでこ
れを避けなければならない。ところが従来この種の記録
膜では、自然結晶化を避けるために結晶化温度が高い材
料を用いると記録時に高い温度まで上げることが必要と
なり、過度の変形のために上記のよつな不都合が起こっ
た。また、Teを主として含む材料は湿度の高い空気中
では酸化されやすいので長期間の保存は困難であった。
In these cases, the reflectance of the recorded portion is usually higher than before recording. However, if the recording film is excessively deformed or holes are formed, the reflectance will change in the opposite direction, which must be avoided. However, in conventional recording films of this type, if a material with a high crystallization temperature is used to avoid spontaneous crystallization, it is necessary to raise the temperature to a high temperature during recording, which causes the above-mentioned problems due to excessive deformation. Ta. In addition, materials mainly containing Te are easily oxidized in humid air, making it difficult to store them for long periods of time.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、これらの≠≠−め問題点を解決し、記
録・再生特性が良好で長期保存が可能な情報の記録用部
材を提供することにある。
An object of the present invention is to solve these problems and provide an information recording member that has good recording/reproducing characteristics and can be stored for a long period of time.

〔発明の概要〕[Summary of the invention]

上記の目的を達成するために本発明の記録用部材におい
ては、記録膜の一層として高融(軟化)点、高沸点の有
機物層を設ける、Teを主として含む材料の層にSeお
よびSbのうちの少なくとも一層を添加し、耐酸化性を
向上させる、などの対策を行なう。
In order to achieve the above object, in the recording member of the present invention, an organic material layer with a high melting (softening) point and a high boiling point is provided as one layer of the recording film, and a layer of a material mainly containing Te is composed of Se and Sb. Take measures such as adding at least one layer of to improve oxidation resistance.

高融(軟化)点高沸点の有機物層を設け・る場所は、記
録膜の基板との境界面とした方が好ましい。
It is preferable that the organic material layer having a high melting (softening) point and a high boiling point is provided at the interface between the recording film and the substrate.

この層の形成方法は、真空蒸着、ガス空蒸着、スパッタ
リング、プラズマ重合、スピン塗布などのうちのいずれ
でもよいが、真空蒸着は簡単で基板表面に凹凸があって
もその上に一様な膜厚で膜を形成できるという点で好ま
しい。この層の膜厚は3Qnm以上、2謹以下の範囲が
好ましく、o、iμm以上2μm以下の範囲がより好ま
しい。この層の材質としては、パリレン(ユニオンカー
)(イド社の商品名、化合物名ポリパラキシリレン)。
This layer can be formed by any method such as vacuum evaporation, gas empty evaporation, sputtering, plasma polymerization, spin coating, etc., but vacuum evaporation is simple and allows a uniform film to be formed on the substrate surface even if the surface is uneven. This is preferable in that a thick film can be formed. The thickness of this layer is preferably in the range of 3 Q nm or more and 2 Q nm or less, more preferably in the range of 0.1 μm or more and 2 μm or less. The material for this layer is Parylene (Union Car) (trade name of Ido Co., Ltd., compound name: polyparaxylylene).

り7ニン(Quanine 、 C3HsNsO) +
銅フタロシアニンなどの金属フタロシアニン化合物、p
−クォーターフェニルなどが、沸点が350 C以上と
高く、特に好せしい。この他アリザリン、ペリレン、テ
トラフェニルスズ、インジゴ系染料ナトも1吏用可能で
ある。
Quanine (C3HsNsO) +
Metal phthalocyanine compounds such as copper phthalocyanine, p
- Quarter phenyl has a high boiling point of 350 C or higher and is particularly preferred. In addition, alizarin, perylene, tetraphenyltin, and indigo dyes can also be used.

さらにこの他種々の有機物が使用可能である。Furthermore, various other organic substances can be used.

有機物膜中に共蒸着等の方法で金属等の無機物を混入さ
せてもよい。記録膜のうち上記の有機物層を除いた部分
が一層の場合は上記の有機物層は基板との境界面と記録
膜の一番上とのうちのいずれか、あるいは両方に配置す
るが、記録膜のうち上記の有機物層を除いた部分が2層
以上の場合には種々の組合わせが可能である。主記録層
であるSb2Se3層と光の反射・吸収層であるBjz
Tes層との組合わせの場合について例を埜げると、■
基板−有機物−8b2Ses−BizTes−有機物■
基板−有機物−B iz Te5S b2Ses−有機
物■基板−有機物−Bi2Te3−有機物−S賜5e3
−有機物■基板−有機物一5b2SeB−有機物−Bj
2T吻−有機物■基板−8b2S e3−有機物−13
i2’I’e3−有機物■基板−Bi2Te3−有機物
−Sb25e3−有機物の基板−81)28e3  B
jzTe3−有機物■基板−Bi2Te3−8b28e
s−有機物■ ■〜■で一番右に書いた有機物層の無い
もの。
An inorganic substance such as a metal may be mixed into the organic substance film by a method such as codeposition. If the portion of the recording film excluding the above-mentioned organic layer is a single layer, the above-mentioned organic layer is placed on either or both of the interface with the substrate and the top of the recording film. If there are two or more layers excluding the organic layer, various combinations are possible. Three Sb2Se layers as the main recording layer and Bjz as the light reflection/absorption layer
For example, in the case of combination with Tes layer, ■
Substrate-Organic substance-8b2Ses-BizTes-Organic substance■
Substrate-Organic substance-Biz Te5S b2Ses-Organic substance■Substrate-Organic substance-Bi2Te3-Organic substance-S 5e3
-Organic substance■Substrate-Organic substance-5b2SeB-Organic substance-Bj
2T proboscis-Organic ■Substrate-8b2S e3-Organic-13
i2'I'e3-Organic substance ■Substrate-Bi2Te3-Organic substance-Sb25e3-Organic substance substrate-81) 28e3 B
jzTe3-organic ■substrate-Bi2Te3-8b28e
s-Organic matter■ Those without organic matter layer written on the far right in ■~■.

などである。これらの層の間に薄い他の層が介在しても
よい。これらのディスクは、もう一枚の同様な形状のデ
ィスクと、接着剤、粘着剤などによって貼り合わせて使
ってもよい。この場合、貼り合わせ前に貼り合わせ面の
上に有機物の保護層をスピンコーティング、あるいはデ
ィッピングによって形成しておくと特に好ましい。
etc. Other thin layers may be interposed between these layers. These disks may be used by being bonded to another similarly shaped disk using an adhesive, adhesive, or the like. In this case, it is particularly preferable to form a protective layer of an organic substance on the bonding surfaces by spin coating or dipping before bonding.

反射および光吸収層の組成は、Teおよび13iのうち
の少なくとも一元素を原子数パーセントで40パ一セン
ト以上含有するものとするが、記録膜の安定性を向上さ
せるためには、Se、sbのうちの少なくとも一元素を
1パ一セント以上45パーセント以下含有させるのが好
址しく、10パーセント以上30パーセント以下含有さ
せるのが特に好ましい。これらの構成元素以外にPb。
The composition of the reflection and light absorption layer shall contain at least one element of Te and 13i in an atomic percentage of 40% or more, but in order to improve the stability of the recording film, Se, sb It is preferable to contain at least one of the above elements in an amount of 1% or more and 45% or less, particularly preferably 10% or more and 30% or less. In addition to these constituent elements, Pb.

Sn、Qe、S i、I n、Zn、Cd、Au。Sn, Qe, Si, In, Zn, Cd, Au.

Ag、Cuなどを含んでもよい。たとえば、Te−8e
、 Te−8b、 B i −8b、 Te−B i 
−8b、 Te−B1−8e、’l’e−F3e−Qe
の組合わせも可能である。このような組成とすることに
よってこの層の熱伝導率を低く保ち、耐熱性。
It may also contain Ag, Cu, etc. For example, Te-8e
, Te-8b, B i -8b, Te-B i
-8b, Te-B1-8e, 'l'e-F3e-Qe
A combination of these is also possible. This composition keeps the thermal conductivity of this layer low, making it heat resistant.

耐酸化性が確保できる。この層の膜厚は5nm以上30
0 nm以下が好ましい。
Oxidation resistance can be ensured. The thickness of this layer is 5 nm or more 30
It is preferably 0 nm or less.

主記録層の組成は、Seを40%以上75%以下含み、
残部の大部分がsbより成るのが特に好ましいが、Sb
に代えてI n r G a + G e 、 Sn 
The composition of the main recording layer contains 40% or more and 75% or less Se,
It is particularly preferred that the remainder consists mostly of sb, but Sb
In place of I n r Ga + G e , Sn
.

Pb、Biのうちの少なくとも一元素を用いてもよい。At least one element of Pb and Bi may be used.

この他Te0x(o<x<2)などを用いてもよい。こ
の層の膜厚は5nrr!以上200nm以下の範囲が好
ましい。これらの層の形成方法は、真空蒸着、ガス空蒸
着、スパッタリングなどで行なうのが好ましい。
In addition, Te0x (o<x<2) or the like may be used. The thickness of this layer is 5nrr! A range of 200 nm or less is preferable. These layers are preferably formed by vacuum deposition, gas vapor deposition, sputtering, or the like.

基板の材質としてはガラス、プラスチック、金属のうち
の一者を用いればよく、これらの複合基板としてもよい
。金属、あるいはガラスの場合には有機物の下塗りを施
すのがよい。
As the material of the substrate, one of glass, plastic, and metal may be used, and a composite substrate of these may be used. In the case of metal or glass, it is best to apply an organic undercoat.

本発明は、結晶化、非晶質化によって記録の書換えを行
なう場合にも有効である。
The present invention is also effective when rewriting records by crystallization or amorphization.

〔発明の実施例〕[Embodiments of the invention]

以下に本発明を実施例によって詳細に説明する。 The present invention will be explained in detail below by way of examples.

実施例1 第1図に示したように、直径30−1厚さ1,2咽のデ
ィスク状アクリル樹脂基板1の表面にトラッキング用の
溝を形成したものを真空蒸着装置中に入れ、回転させな
がら、ディスクの下方に配置しまた蒸着ボートからまず
パリレン−Nf、約600nmの厚さに蒸着し、層2と
した。次に別の蒸着ボートからたいたいSb2Se3 
 の組成の層3を約59nmの膜厚に蒸着した。次にま
た別の複数の蒸着ボートからだいたいB 14oT e
4s S e+sの組成の層4(i:約5Qnmの膜厚
に蒸着した。さらにこの上に再びパリレン−N’(r約
600nmの厚さに蒸着し、層5とした。次にこのディ
スクを真空蒸着装置から取り出し、PMMAを約2μm
の厚さに塗布し、層6とした。このようなディスク全2
枚1製し、粘着剤7で貼り合わせた。
Example 1 As shown in Fig. 1, a disk-shaped acrylic resin substrate 1 with a diameter of 30-1 and a thickness of 1 to 2 mm with grooves for tracking formed on the surface was placed in a vacuum deposition apparatus and rotated. At the same time, Parylene-Nf was first deposited to a thickness of about 600 nm from a deposition boat placed below the disk to form Layer 2. Next, Sb2Se3 is extracted from another vapor deposition boat.
A layer 3 having a composition of about 59 nm was deposited. Next, from another plurality of vapor deposition boats, approximately B 14oT e
A layer 4 (i: about 5 Qnm thick was deposited) having a composition of 4s S e + s.Furthermore, parylene-N' (r) was deposited again to a thickness of about 600 nm to form layer 5.Next, this disk was Take out from the vacuum evaporation equipment and coat PMMA with a thickness of about 2 μm.
Layer 6 was applied to a thickness of . 2 such discs
One sheet was made and bonded together with adhesive 7.

上記のようにして形成したディスクへの記録は次のよう
にして行なった。ディスクを5QQrpmで回転させ、
半導体レーザ(波長820nm)の光を記録が行なわれ
ないレベルに保って記録ヘッド中のレンズで集光して基
板を通してディスクに照射し、反射光を検出することに
よって、トラッキング用の溝の中心と光スポットの中心
が常に一致するようにヘッドを駆動した。このようにト
ラッキングを行ないながら、さらに記録膜上に焦点が来
るように自動焦点合わせを行ない、レーザパワーt−情
報信号に従って強めたり元のレベルに戻シたりすること
によって記録を行なった。寸だ、必要に応じて別の溝に
ジャンプして記@全行なった。
Recording on the disk formed as described above was carried out as follows. Rotate the disk at 5QQrpm,
The light from a semiconductor laser (wavelength: 820 nm) is kept at a level that does not allow recording, is focused by a lens in the recording head, and is irradiated onto the disk through the substrate. By detecting the reflected light, the center of the tracking groove and The head was driven so that the center of the light spot was always aligned. While tracking in this manner, automatic focusing was performed so that the focus was on the recording film, and recording was performed by increasing or returning the laser power to the original level in accordance with the t-information signal. I did all the work, jumping to other grooves as needed.

記録は、S bz S 83層およびB i4o T 
′eu S exs層の原子配列“が変化することによ
って行なわれた。
Recording is S bz S 83 layer and B i4o T
This was done by changing the ``atomic arrangement'' of the ``eu S exs layer''.

胱出しは次のようにして行なった。ディスクを600r
pmで回転させ、記録時と同じようにトラッキングと自
動焦点合わせを行ないながら、記録されないようなレー
ザパワーで反射光の強弱を検出し、情報を再生した。本
実施例では約I X 10−5のエラーレイトが得られ
、60層湿度95%1カ月の寿命試験でも変化は僅かで
あった。
Bladder removal was performed as follows. 600r disc
pm, and while performing tracking and automatic focusing in the same way as during recording, the strength of the reflected light was detected using a laser power that would not be recorded, and the information was reproduced. In this example, an error rate of about I x 10-5 was obtained, and even in a one-month life test of 60 layers with a humidity of 95%, there was little change.

本実施例において先に蒸着したパリレン層を省略した場
合には記録時の記録膜の変形が大きくなり、エラーレイ
トは約lXl0−’であった。記録膜の上に蒸着したパ
リレン層を省略した場合にはエラーレイトは3X10−
’となった。J3i−Te−8e膜の代わりにBizT
ea層を用いた場合には60層湿度95%1カ月の寿命
試験でエラーレイトは5X10−’となった。
In this example, when the previously deposited parylene layer was omitted, the deformation of the recording film during recording became large, and the error rate was about 1X10-'. If the parylene layer deposited on the recording film is omitted, the error rate is 3X10-
' became. BizT instead of J3i-Te-8e film
When the EA layer was used, the error rate was 5 x 10-' in a life test of 60 layers at 95% humidity for one month.

Bi−’J”e−Se層の860代わりKSbを添加し
ても類似の効果が得られたが600湿度95%の寿命試
験ではいくらか変化が見られた。
A similar effect was obtained by adding KSb instead of 860 in the Bi-'J''e-Se layer, but some changes were observed in the 600 humidity 95% life test.

B i4o T e4s S exs層の代わ9に)3
 i 55 S b4s +T eso S e201
 T e90 S elOおよびT e7o S b3
oの組成の層の使用も可能であった。Se、Sbのうち
の一元素の好ましい含有量は1パ一セント以上45%以
下、より好ましい含有量1dlOパ一セント以上30パ
ーセント以下であった。
B i4o T e4s S exs layer instead of 9) 3
i 55 S b4s + T eso S e201
T e90 S elO and T e7o S b3
It was also possible to use a layer of composition o. The preferred content of one element among Se and Sb was 1% to 45%, and the more preferred content was 1 dlO% to 30%.

本実施例において、5bzSes層とB14oTe4s
SelS層との形成順序を逆にすることも可能であった
が、その場合にはPMMAの代わりにシリコン樹脂を約
150μmの厚さに塗布し、他のディスクとの貼シ合わ
せを行なわずにシリコン樹脂側から光を入射させて記録
・再生を行なった。
In this example, the 5bzSes layer and B14oTe4s
It was also possible to reverse the formation order with the SelS layer, but in that case, silicone resin was applied to a thickness of about 150 μm instead of PMMA, without bonding with other disks. Recording and reproduction were performed by entering light from the silicone resin side.

S’1)2861層の代わυにTe0x(0<x<2)
、In28e3 、 In283 tあるいはこれらに
近い組成、あるいはこれらに他の元素を添加したもので
も同様な記録が可能である。
S'1) Te0x (0<x<2) for υ instead of 2861 layer
, In28e3, In283t, compositions similar to these, or those with other elements added to them can also perform similar recording.

パリレンの代わシにグアニン等を蒸頒しても同様な結果
が得られた。
Similar results were obtained when guanine or the like was vaporized instead of parylene.

〔発明の効果〕〔Effect of the invention〕

パリレン等の高沸点有機物層の膜厚は1100n以上で
ほぼ上記の実施例に近いエラーレイトが得られたが、3
0層mから1100nの範囲でも効果はあった。これら
の層をあまシ厚くすると膜の平坦度が悪くなるので、2
μm以下とするのが特に好ましかった。
When the film thickness of the high boiling point organic material layer such as parylene was 1100 nm or more, an error rate almost close to that of the above example was obtained;
The effect was also found in the range of 0 layer m to 1100 n. If these layers are made too thick, the flatness of the film will deteriorate, so
It was particularly preferable that the thickness be less than μm.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の1実施例における記録用部材の構造を
示す断面図である。 1.1′・・・基板、2,2′・・・有機物層、3,3
′・・・無機物層、4,4′・・・無機物層、5・・・
有機物層、第  1  図
FIG. 1 is a sectional view showing the structure of a recording member in one embodiment of the present invention. 1.1'...Substrate, 2,2'...Organic layer, 3,3
'...Inorganic layer, 4,4'... Inorganic layer, 5...
Organic layer, Figure 1

Claims (1)

【特許請求の範囲】[Claims] 1、所定の基板上に薄膜を形成し、この薄膜上にレーザ
ビームなどの二坏ルギービームを照射して薄膜の蒸発を
伴なわない方法で情報を記録する用途に用いる情報の記
録用部材において、上記薄膜を2層以上とし、そのうち
の少なくとも一層として沸・点が350C以上の有機物
を主成分とする層を設けたことを特徴とする情報の記録
用部材。
1. In an information recording member used for forming a thin film on a predetermined substrate and irradiating the thin film with a double energy beam such as a laser beam to record information by a method that does not involve evaporation of the thin film. . An information recording member comprising two or more layers of the thin film, at least one of which is a layer containing an organic substance having a boiling point of 350C or higher as a main component.
JP58044227A 1983-03-18 1983-03-18 Member for recording information Pending JPS59171045A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58044227A JPS59171045A (en) 1983-03-18 1983-03-18 Member for recording information

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58044227A JPS59171045A (en) 1983-03-18 1983-03-18 Member for recording information

Publications (1)

Publication Number Publication Date
JPS59171045A true JPS59171045A (en) 1984-09-27

Family

ID=12685650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58044227A Pending JPS59171045A (en) 1983-03-18 1983-03-18 Member for recording information

Country Status (1)

Country Link
JP (1) JPS59171045A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222443A (en) * 1986-03-22 1987-09-30 Nippon Telegr & Teleph Corp <Ntt> Rewriting type optical recording medium
WO1999030908A1 (en) * 1997-12-17 1999-06-24 Asahi Kasei Kogyo Kabushiki Kaisha Write once optical information recording medium
CN102610755A (en) * 2012-03-26 2012-07-25 北京大学 Ultra-low-power organic resistance changing memory device and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222443A (en) * 1986-03-22 1987-09-30 Nippon Telegr & Teleph Corp <Ntt> Rewriting type optical recording medium
WO1999030908A1 (en) * 1997-12-17 1999-06-24 Asahi Kasei Kogyo Kabushiki Kaisha Write once optical information recording medium
CN102610755A (en) * 2012-03-26 2012-07-25 北京大学 Ultra-low-power organic resistance changing memory device and manufacturing method thereof

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