JPS59158533A - Method of measurement of impurity - Google Patents
Method of measurement of impurityInfo
- Publication number
- JPS59158533A JPS59158533A JP3099383A JP3099383A JPS59158533A JP S59158533 A JPS59158533 A JP S59158533A JP 3099383 A JP3099383 A JP 3099383A JP 3099383 A JP3099383 A JP 3099383A JP S59158533 A JPS59158533 A JP S59158533A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- measurement
- semiconductor single
- galium
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
（技術分野）
この発明は、測定用の試料作成工程なしにＭＯＳ構造の
絶縁膜中に含まれる可動イオン量を測定す従来のＭＯＳ
構造での絶縁膜中の可動イオン測定法としての、ＴＶＳ
測定に於ける試料の構造を第１図に示す。ＴＶＳ法とは
、Ｔｒｉａｎｇｉｅ Ｖｏｌｔａｇｅ Ｓｗｅｅｐ法の
略で、三角波を印加して、可動イオンによる電位電流の
パルス状の波形を取ｐ出し、その面積よりイオン量を求
め乙可動イオン測定方法である。Detailed Description of the Invention (Technical Field) The present invention relates to a conventional MOS device that measures the amount of mobile ions contained in an insulating film of a MOS structure without a sample preparation process for measurement.
TVS as a method for measuring mobile ions in insulating films in structures
Figure 1 shows the structure of the sample used in the measurement. The TVS method is an abbreviation for the Triangie Voltage Sweep method, and is a mobile ion measurement method in which a triangular wave is applied, a pulsed waveform of a potential current caused by mobile ions is extracted, and the amount of ions is determined from the area thereof.
すなわち、第１図に示すように、２５０℃以上の高温で
ＭＯＳに印−Ｄ口するバイアスを正から負にランプ走査
を行い、電圧の極性が変化する際、絶縁膜２中の可動イ
オンが５ｉｌ−絶縁膜２の界面より絶縁膜２−電極３の
界面へ移動するときの変位電流として測定することによ
ｐ１可動イオン量を求めるものである。That is, as shown in FIG. 1, the bias applied to the MOS is ramp-scanned from positive to negative at a high temperature of 250° C. or higher, and when the polarity of the voltage changes, the mobile ions in the insulating film 2 The amount of p1 mobile ions is determined by measuring the displacement current when moving from the 5il-insulating film 2 interface to the insulating film 2-electrode 3 interface.
したがって、ＴＶＳの測定には、ＭＯＳ構造が必要であ
り、たとえばＳｉ上に５ｉｎ２形成後電極形成工程が必
要となる。Therefore, a MOS structure is required for TVS measurement, and an electrode formation step is required after forming 5in2 on Si, for example.
電極形成は、一般に真空中で電子ビーム蒸着やスパッタ
蒸着により、ＳｉＯ□上に全面届などの金属を形成し、
その後ホトリソ、エツチング工程により、任意の形状、
面積を有する電極が形成される。Electrode formation generally involves forming a metal layer on the entire surface of SiO□ by electron beam evaporation or sputter deposition in a vacuum.
After that, photolithography and etching processes are used to create any desired shape.
An electrode having an area is formed.
このように、電櫨形成には、いくつかの工程が必要であ
るため、その間、ナトリウム（Ｎａ）などの可動イオン
が８１０２中に混入し、実際に５ｊ０２ 中に含まれて
い／と量に対する誤差要因となっていた。As described above, since several steps are required for the formation of the electric wire, mobile ions such as sodium (Na) are mixed into the 8102 during the process, and there is an error in the amount actually contained in the 5j02. This was a contributing factor.
（発明の目的）
この発明は、これらの欠点を除去するためになされたも
ので、複雑な試料作成工程を経ず、半導体単結晶上の絶
縁膜中に含まれる可動イオン量を４易に測定でき、５ｉ
ＬＳＩでのプロセス評価法として利用できる不純物の測
定方法を提供することを目的とする。(Purpose of the invention) This invention was made to eliminate these drawbacks, and it is possible to easily measure the amount of mobile ions contained in an insulating film on a semiconductor single crystal without going through a complicated sample preparation process. Yes, 5i
The purpose of this invention is to provide a method for measuring impurities that can be used as a process evaluation method for LSI.
（発明の構成）
この発明の不純物の測定方法は、半導体単結晶上の絶縁
膜形成後、ガリウム（Ｇａ）をこの絶縁膜上で熔解させ
、その後ガリウムを加熱してガリウムと半導体単結晶間
の電圧、電流特性を測定することにより絶縁膜中の可動
イオン量を測定するようにしたものである。(Structure of the Invention) The method for measuring impurities of the present invention is to melt gallium (Ga) on the insulating film after forming an insulating film on a semiconductor single crystal, and then heat the gallium to create a bond between the gallium and the semiconductor single crystal. The amount of mobile ions in the insulating film is measured by measuring voltage and current characteristics.
（実施例）
以下、この発明の不純物の測定方法の実施例について図
面に基づき説明する。第２図（ａ）〜第２図（ｃ）はそ
の一実施例を説明するための図であり、まず、第２図（
ａ）に示すように８１などの半導体単結晶１１上に絶縁
膜１２を形成する。(Example) Hereinafter, an example of the method for measuring impurities of the present invention will be described based on the drawings. FIGS. 2(a) to 2(c) are diagrams for explaining one embodiment of the present invention.
As shown in a), an insulating film 12 is formed on a semiconductor single crystal 11 such as 81.
次に、第２図（ｂ）のように、絶縁膜１２上に室温にて
ガリウムぐ以下Ｇａと云う）１３を約１０キのせる。Next, as shown in FIG. 2(b), approximately 10 kg of gallium (hereinafter referred to as Ga) 13 is placed on the insulating film 12 at room temperature.
次に、第２図（ｃ）に示すように、試料としてのＧａ】
３の温度をウェハープロパー上で約２５０℃に上昇させ
、Ｇａ１．３を熔解させ、Ｇａ１３をＭＯ８構造での電
極として、電圧〜電流測定用の探針１４をＧａ１３に接
触させることによシ、ＴＶＳ測定を行う。Next, as shown in FIG. 2(c), Ga]
By raising the temperature of 3 to about 250°C on the wafer proper to melt Ga1.3, using Ga13 as an electrode in the MO8 structure, and bringing the probe 14 for voltage to current measurement into contact with Ga13, Perform TVS measurement.
第３図は、この発明でのＴＶＳ測定の例を示す。FIG. 3 shows an example of TVS measurement according to the present invention.
可動イオンを求めるための電極面積は、電流のバックグ
ラウンド成分ＩＢから容易に求めることができる０
以上のように、この発明では、面倒な従来の電極形成工
程が省略でき、かつその間での汚染の影響がなくなるた
め、精度良く絶縁膜１２中の可動イオン量を測定するこ
とができる。The electrode area for determining the mobile ions can be easily determined from the background component IB of the current. Since the influence is eliminated, the amount of mobile ions in the insulating film 12 can be measured with high accuracy.
（発明の効果）
以上のように、この発明の不純物の測定方法によれば、
半導体単結晶上の絶縁膜形成後Ｇａをこの絶縁膜上で熔
解させ、その後ガリウムを加熱してガリウムと半導体単
結晶間の電圧・電流特性を測定することにより、絶縁膜
中の可動イオン量を測定するようにしたので、複雑な試
料作成工程を経ず、５ｉｏｔなどの絶縁膜中の可動イオ
ン量が測定できる。これにより５ｉＬＳＩでのプロセス
評価法として利用することができる。(Effect of the invention) As described above, according to the method for measuring impurities of the present invention,
After forming an insulating film on a semiconductor single crystal, we melted Ga on the insulating film, then heated the gallium, and measured the voltage and current characteristics between the gallium and the semiconductor single crystal to determine the amount of mobile ions in the insulating film. Since the measurement is carried out, the amount of mobile ions in an insulating film such as 5iot can be measured without going through a complicated sample preparation process. This allows it to be used as a process evaluation method for 5iLSI.
第１図は従来の可動イオン測定用試料の構造を示す断面
図、第２図（ａ）〜第２図（、）は、それぞれこの発明
の不純物の測定法の一実施例を説明するための図、第３
図は、この発明の不純物の測定法によるＴＶＳの測定結
果を示す図である。
１１・・・半導体単結晶、１２・・・絶縁膜、１３・・
・Ｇａ。
１４・・・測定用探針。
手続補正書
昭和５８年１０月１．９日
特許庁長官若 杉 和 夫殿
■、小事件表示
昭和５８年 特 許 願第３０９９３ 号２、発明
の名称
不純物の測定方法
３、補正をする者
事件との関係 特 許 出願人（０２９）沖電
気工業株式会社
４、代理人
５、 ｒ＋ｌｉ正命令の日付 昭和 年 月
日（自発）６、補正の対象
明細壱の発明の詳細な説明の欄
７、補正の内容
１） Ｆ３Ａ細橘１頁末惰「パルス状の」を削除する
。FIG. 1 is a cross-sectional view showing the structure of a conventional sample for measuring mobile ions, and FIGS. Figure, 3rd
The figure is a diagram showing the results of TVS measurement using the impurity measurement method of the present invention. 11... Semiconductor single crystal, 12... Insulating film, 13...
・Ga. 14...Measurement probe. Written amendment dated October 1, 1980, Mr. Kazuo Wakasugi, Commissioner of the Japan Patent Office■, Minor case indication, Patent Application No. 30993 of 1982 2, Title of invention Method for measuring impurities 3, Person making amendment case Relationship with Patent Applicant (029) Oki Electric Industry Co., Ltd. 4, Agent 5, Date of r+li positive order Month, Showa
Day (spontaneous) 6, Detailed explanation of the invention column 7 of Specification subject to amendment 1, Contents of amendment 1) Delete "pulse-like" at the end of page 1 of F3A Hoso Tachibana.
Claims (1)
上で熔解させ、その後このガリウムを加熱してガリウム
と半導体単結晶間の電圧電流特性を測定することにより
」記絶縁膜中に含まれる可動イオン量を測定することを
特徴とする不純物の測定方法。After forming an insulating film on a semiconductor single crystal, gallium is melted on this insulating film, and then the gallium is heated and the voltage-current characteristics between the gallium and the semiconductor single crystal are measured. A method for measuring impurities characterized by measuring the amount of mobile ions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3099383A JPS59158533A (en) | 1983-02-28 | 1983-02-28 | Method of measurement of impurity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3099383A JPS59158533A (en) | 1983-02-28 | 1983-02-28 | Method of measurement of impurity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59158533A true JPS59158533A (en) | 1984-09-08 |
Family
ID=12319123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3099383A Pending JPS59158533A (en) | 1983-02-28 | 1983-02-28 | Method of measurement of impurity |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59158533A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02224355A (en) * | 1988-12-21 | 1990-09-06 | American Teleph & Telegr Co <Att> | Measurement of concentration of movable ions in semiconductor device |
| JP7177971B1 (en) * | 2022-05-02 | 2022-11-24 | 株式会社東陽テクニカ | Physical property measuring method, physical property measuring system, and physical property measuring element |
-
1983
- 1983-02-28 JP JP3099383A patent/JPS59158533A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02224355A (en) * | 1988-12-21 | 1990-09-06 | American Teleph & Telegr Co <Att> | Measurement of concentration of movable ions in semiconductor device |
| JP7177971B1 (en) * | 2022-05-02 | 2022-11-24 | 株式会社東陽テクニカ | Physical property measuring method, physical property measuring system, and physical property measuring element |
| WO2023214455A1 (en) * | 2022-05-02 | 2023-11-09 | 株式会社東陽テクニカ | Physical property measurement method, physical property measurement system, and element for physical property measurement |
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