JPS59155733A - Force converter - Google Patents

Force converter

Info

Publication number
JPS59155733A
JPS59155733A JP3031183A JP3031183A JPS59155733A JP S59155733 A JPS59155733 A JP S59155733A JP 3031183 A JP3031183 A JP 3031183A JP 3031183 A JP3031183 A JP 3031183A JP S59155733 A JPS59155733 A JP S59155733A
Authority
JP
Japan
Prior art keywords
diaphragm
fluid
cap
projection
force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3031183A
Other languages
Japanese (ja)
Inventor
Hiroshi Tanigawa
紘 谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3031183A priority Critical patent/JPS59155733A/en
Publication of JPS59155733A publication Critical patent/JPS59155733A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/18Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To obtain a miniatruized force converter enhanced in sensitivity and free from the drift or hysteresis of an output signal, by using a semiconduction diaphragm. CONSTITUTION:A diaphragm 20 is provided to the center part of a cap 19 and a projection 21 is further formed to the center part of the diaphragm 20. This projection 21 is arranged so as to receive external force. The space surrounded by the projection 21, the cap 19 and the diaphragm 20 is filled with a fluid 22. The fluid 20 may be gas such as air or nitrogen or a liquid such as silicone rubber but pref. comprises a material low in coefficient of thermal expansion from the standpoint of temp. characteristics. When force is applied to the projection 21, the fluid 20 is compressed to be converted to the fluid pressure to the diaphragm 20. Because the diaphragm 20 is bent by said fluid pressure, the resistance value of the diaphragm 20 is changed and detected as a voltage output signal.

Description

【発明の詳細な説明】 本発明は力変換器に関し、特に半導体ダイアフラム型セ
ンサを用い念力変換器に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to force transducers, and more particularly to a psychokinetic transducer using a semiconductor diaphragm type sensor.

最近の半導体技術の進歩に伴って、空気、水、油等の流
体の圧力検出器や圧力−電気信号変換器などに半導体ダ
イアフラムを使用するものが実用化されつつある。半導
体には安価で歪−抵抗値変化係数(所謂ゲージ率)の大
きいシリコンが多く用いられている。
With recent advances in semiconductor technology, devices using semiconductor diaphragms are being put into practical use in pressure detectors for fluids such as air, water, oil, etc., pressure-to-electrical signal converters, and the like. Silicon, which is inexpensive and has a large strain-resistance change coefficient (so-called gauge factor), is often used for semiconductors.

第1図は従来のシリコンダイアフラム型圧力変換器の一
例の断面図である。
FIG. 1 is a sectional view of an example of a conventional silicon diaphragm pressure transducer.

シリコン・ダイ1の中央部に超音波加工法、放電加工法
、異方性エツチング等の周知の方法でM肉のダイアフラ
ム2を設け、このダイアフラムの一部を含むように複数
の拡散層3を設ける。拡散層3はダイ1とは反対導電型
で、拡散層3とダイ1とでPH1合を形成する。ダイ1
の主面に5i(h等の絶縁膜4を被着し、拡散層3の部
分を窓あけし、金属配線5を設ける。
A diaphragm 2 of M thickness is provided in the center of the silicon die 1 by a well-known method such as ultrasonic machining, electric discharge machining, anisotropic etching, etc., and a plurality of diffusion layers 3 are formed to include a part of this diaphragm. establish. The diffusion layer 3 has a conductivity type opposite to that of the die 1, and the diffusion layer 3 and the die 1 form a PH1 combination. die 1
An insulating film 4 such as 5i (h) is deposited on the main surface of the substrate, a window is opened in the diffusion layer 3, and a metal wiring 5 is provided.

パッケージはベース部7とキャップ9とから成り、それ
ぞれ流体を導入するバイブ8,1oが取付けられている
。ベース部7には外部引出し用端子11がペースと電気
的に絶縁されて引出されている。
The package consists of a base part 7 and a cap 9, each of which is attached with a vibrator 8, 1o for introducing fluid. An external lead-out terminal 11 is drawn out from the base portion 7 while being electrically insulated from the pace.

ベース部7に接着剤6を介してダイ1を固着し、外部引
出し用端子11と金属配線5とを金鵬細線12で接続し
た後、ベース部7の周辺にキャップ9を気密封止する。
After fixing the die 1 to the base part 7 via an adhesive 6 and connecting the external lead terminal 11 and the metal wiring 5 with a metal wire 12, a cap 9 is hermetically sealed around the base part 7.

このように構成された圧力変換器において、パイプ8と
10とにそれぞれ流体を導入すると、これらの流体間に
圧力差があればダイアフラム2が圧力の高い方の流体に
押されて変形する。この変形によりダイアフラム2の抵
抗値が変化する。抵抗値の変化は二つの拡散層3の間に
定電流を流しておけば電圧変化として検出できる。
In the pressure transducer configured in this manner, when fluids are introduced into the pipes 8 and 10, if there is a pressure difference between these fluids, the diaphragm 2 is pushed by the higher pressure fluid and deforms. This deformation causes the resistance value of the diaphragm 2 to change. A change in resistance value can be detected as a voltage change by flowing a constant current between the two diffusion layers 3.

このダイアフラム型圧力変換器は流体圧力、即ち単位面
積当りの力(通常klil / c−の単位で衣わされ
る)を計測するには適するが力(k17 / ctAの
単位に対比させたときはkg)を計測するには適さない
This diaphragm pressure transducer is suitable for measuring fluid pressure, i.e. force per unit area (usually expressed in units of klil/c-), but when compared to units of force (k17/ctA). kg) is not suitable for measuring weight.

一方、各種産業においてロボットが多用されるようにな
ってきているが、このロボットが対象物を把握するとき
の把握力を制御するために、対象物を把握したときの触
覚を検出する変換器がロボットに不可欠な要素となって
いる。この触覚検出用変換器には圧力検出器ではなく力
検出器が必要である。
On the other hand, robots are increasingly being used in various industries, and in order to control the grasping force of these robots when grasping an object, a transducer that detects the tactile sensation when grasping an object is required. It has become an essential element for robots. This tactile sensing transducer requires a force sensor rather than a pressure sensor.

前述の半導体ダイアフラム型圧力変換器は、圧力検出器
であって力検出器ではないので使用できないという欠点
がある。そのため、古くからある所謂ロードセルと称せ
られる荷重測定器が使用されてきた。しかしながら、従
来のロードセルでは、小型化が難しいこと、高感度が得
がたいこと、出力信号がドリフトしたり、ヒステリシス
特性が出現したジするという欠点がある。
The aforementioned semiconductor diaphragm type pressure transducer has the disadvantage that it cannot be used because it is a pressure detector and not a force detector. Therefore, a load measuring device called a so-called load cell has been used for a long time. However, conventional load cells have drawbacks such as difficulty in miniaturization, difficulty in obtaining high sensitivity, drift in output signals, and appearance of hysteresis characteristics.

本発明の目的は上記欠点を除去し、半導体ダイアフラム
を用いることにより小型、高感度、低価格が達成でき、
しかも出力信号のドリフトやヒステリシスのない力変換
器を提供することにある。
The purpose of the present invention is to eliminate the above-mentioned drawbacks, and to achieve small size, high sensitivity, and low cost by using a semiconductor diaphragm.
Moreover, it is an object of the present invention to provide a force transducer without drift or hysteresis in the output signal.

本発明の力変換器は、中央部が周辺部より薄肉であるダ
イアフラムを々゛する半導体グイと、該半導体ダイの一
主面上に前記ダイアフラム領域を一部含むように設けら
れた枚数の拡散層と、外部引出し用端子を有し前記半導
体ダイを固着し前記拡散層と外部引出し用端子とを電気
的に接続したパッケージのベース部と、該ベース部の周
囲に気密封止されたパッケージのキャップと、該キャッ
プの一部に設けられたダイアフラムとを含んで構成され
る。
The force transducer of the present invention includes a semiconductor die having a diaphragm whose central part is thinner than its peripheral part, and a plurality of semiconductor chips provided on one main surface of the semiconductor die so as to partially include the diaphragm region. a base portion of a package having a terminal for external extraction, to which the semiconductor die is fixed and electrically connecting the diffusion layer and the terminal for external extraction, and a base portion of the package hermetically sealed around the base portion. The device includes a cap and a diaphragm provided in a portion of the cap.

次に本発明の実施例について図面を用いて説明する。Next, embodiments of the present invention will be described with reference to the drawings.

第2図は本発明の一実施例の断面図である。FIG. 2 is a sectional view of one embodiment of the present invention.

半導体ダイ1及びパッケージのベース部7は第1図で説
明したものと同一である。キャップは従来と異っている
。キャップ19の中央部にはダイアフラム20が設けら
れている。更に、ダイアフラム20の中央部には突起2
1を形成する。この突起21は外部から力がこの突起に
印加されるように配置する。ベース部7.キャップ19
.ダイアフラム20とで囲まれた空間には流体22を充
填する。流体は空気、窒素等のガスでも、あるいはシリ
コーンゴムのような液体でも良いが、湯度特性の面から
は熱膨張係数が低い材質であることが好ましい。
The semiconductor die 1 and the base portion 7 of the package are the same as described in FIG. The cap is different from the traditional one. A diaphragm 20 is provided in the center of the cap 19. Furthermore, a protrusion 2 is provided at the center of the diaphragm 20.
Form 1. This projection 21 is arranged so that a force can be applied to this projection from the outside. Base part 7. cap 19
.. A space surrounded by the diaphragm 20 is filled with a fluid 22. The fluid may be a gas such as air or nitrogen, or a liquid such as silicone rubber, but from the viewpoint of hot water properties, it is preferable to use a material with a low coefficient of thermal expansion.

ダイアプラム20は剛性が高い材質であること5− が好ましく、突起21が図で上下方向にのみ移動できる
ことが好ましい。かかる要求を満たすためにはステンレ
ス鋼薄板に同心円状のひだを複数設けると良い。
It is preferable that the diaphragm 20 is made of a material with high rigidity, and it is preferable that the protrusion 21 can only move in the vertical direction in the figure. In order to meet this requirement, it is preferable to provide a plurality of concentric corrugations in the thin stainless steel plate.

このように構成した力変換器において、突起21に力が
印加されると流体22は圧縮され、ダイアフラム2への
流体圧に変換される。この流体圧はダイアフラム2を撓
ませ、そのためダイアフラム2の抵抗値が変化する。こ
の抵抗値は、第1図で説明したのと同様にして電圧出力
信号として検出される。
In the force transducer configured in this way, when a force is applied to the protrusion 21, the fluid 22 is compressed and converted into fluid pressure to the diaphragm 2. This fluid pressure causes the diaphragm 2 to deflect, so that the resistance value of the diaphragm 2 changes. This resistance value is detected as a voltage output signal in the same manner as explained in FIG.

上記実施例では流体導入パイプ8は開放になっているが
、パイプ8は閉ざされた構造、あるいはベース部7に貫
通孔がなくパイプ8もない構造であっても良い。このよ
うな非開放構造においてはダイアフラム2の下方の空間
は真空にするか、もしくは空気、窒素ガス、シリコーン
ゴム等を充填する。また、上記実施例では半導体ダイ1
、ダイアフラム2をシリコンで作ったが、シリコン以外
の半導体、例えばQaAs等の■−v族化合物、ゲ6一 ルマニウム等を用いて作っても良いことはもちろんであ
る。
In the above embodiment, the fluid introduction pipe 8 is open, but the pipe 8 may have a closed structure or a structure in which the base portion 7 does not have a through hole and the pipe 8 does not exist. In such a non-open structure, the space below the diaphragm 2 is evacuated or filled with air, nitrogen gas, silicone rubber, or the like. Further, in the above embodiment, the semiconductor die 1
Although the diaphragm 2 is made of silicon, it goes without saying that it may be made of a semiconductor other than silicon, such as a -v group compound such as QaAs, Ge6-almanium, or the like.

以上詳細に説明したように、本発明によれば、従来のロ
ードセルのような出力信号のドリフトやヒヌテリンスの
出現がなく、小型、高感度、低価格が達成できる力変換
器が得られるのでその効果は大きい。
As explained in detail above, according to the present invention, a force transducer that does not have output signal drift or hysteresis unlike conventional load cells, and can achieve small size, high sensitivity, and low cost can be obtained. is big.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のシリコンダイアフラム型圧力変換器の一
例の断面図、第2図は本発明の一実施例の断面図である
。 1・・・・・・シリコン・ダイ% 2・・・・・・ダイ
アフラム、3・・・・・・拡散層、4・・・・・・絶縁
膜、訃・・・・・金桐配線、6・・・・・・接着剤、7
・・・・・・パッケージのベース部、8・・・・・・パ
イプ、9・・・・・・キャップ、10・・・・・・パイ
プ、11・・・・・・外部引出し用端子、12・・・・
・・金属細線、19・・・・・・キャップ、20・・・
・・・ダイアフラム、217− 篤1図 第 ? 図
FIG. 1 is a sectional view of an example of a conventional silicon diaphragm pressure transducer, and FIG. 2 is a sectional view of an embodiment of the present invention. 1...Silicon die% 2...Diaphragm, 3...Diffusion layer, 4...Insulating film, Death...Kanato wiring, 6...Adhesive, 7
...Base part of the package, 8 ... Pipe, 9 ... Cap, 10 ... Pipe, 11 ... External drawer terminal, 12...
...Thin metal wire, 19...Cap, 20...
...Diaphragm, 217- Atsushi Figure 1 No. ? figure

Claims (1)

【特許請求の範囲】[Claims] 中央部が周辺部より薄肉であるダイアフラムを有する半
導体ダイと、該半導体ダイの一主面上に前記ダイアフラ
ム領域を一部含むように設けられた複数の拡散層と、外
部引出し用端子を有し前記半導体ダイを固着し前記拡散
層と外部引出し用端子とを電気的に接続したパッケージ
のベース部と、該ベース部の周囲に気密封止されたパッ
ケージのキャップと、該キャップの一部に設けられたダ
イアフラムとを含むことを特許とする力変換器。
A semiconductor die having a diaphragm whose center portion is thinner than a peripheral portion, a plurality of diffusion layers provided on one main surface of the semiconductor die so as to partially include the diaphragm region, and an external lead terminal. A base portion of a package to which the semiconductor die is fixed and the diffusion layer and an external lead-out terminal are electrically connected, a cap of the package hermetically sealed around the base portion, and a part of the cap. A patented force transducer comprising: a diaphragm;
JP3031183A 1983-02-25 1983-02-25 Force converter Pending JPS59155733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3031183A JPS59155733A (en) 1983-02-25 1983-02-25 Force converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3031183A JPS59155733A (en) 1983-02-25 1983-02-25 Force converter

Publications (1)

Publication Number Publication Date
JPS59155733A true JPS59155733A (en) 1984-09-04

Family

ID=12300232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3031183A Pending JPS59155733A (en) 1983-02-25 1983-02-25 Force converter

Country Status (1)

Country Link
JP (1) JPS59155733A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08505939A (en) * 1993-03-11 1996-06-25 シュレイダー・オートモーティヴ・インコーポレイテッド Remote tire pressure monitoring system that employs coded tire identification and radio frequency transmission and enables recalibration when replacing or replacing tires
JPWO2003065892A1 (en) * 2002-02-05 2005-05-26 株式会社エム・アイ・ラボ Biological information detection device using air pressure fluctuation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5731629B2 (en) * 1975-09-01 1982-07-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5731629B2 (en) * 1975-09-01 1982-07-06

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08505939A (en) * 1993-03-11 1996-06-25 シュレイダー・オートモーティヴ・インコーポレイテッド Remote tire pressure monitoring system that employs coded tire identification and radio frequency transmission and enables recalibration when replacing or replacing tires
JPWO2003065892A1 (en) * 2002-02-05 2005-05-26 株式会社エム・アイ・ラボ Biological information detection device using air pressure fluctuation

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