JPS59152736U - Electronic annealing device - Google Patents

Electronic annealing device

Info

Publication number
JPS59152736U
JPS59152736U JP4796283U JP4796283U JPS59152736U JP S59152736 U JPS59152736 U JP S59152736U JP 4796283 U JP4796283 U JP 4796283U JP 4796283 U JP4796283 U JP 4796283U JP S59152736 U JPS59152736 U JP S59152736U
Authority
JP
Japan
Prior art keywords
electron beam
annealing device
polycrystalline material
electronic
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4796283U
Other languages
Japanese (ja)
Inventor
進 後藤
Original Assignee
日本電子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電子株式会社 filed Critical 日本電子株式会社
Priority to JP4796283U priority Critical patent/JPS59152736U/en
Publication of JPS59152736U publication Critical patent/JPS59152736U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は電子線アニール装置の概略図、第2図は従来の
電子銃の概略図、第3図は本考案の要旨の一実施例とし
て示した電子銃の概略図、第4図は該電子銃からの電子
線の強度分布を示したものである。 1:衝撃型電子銃、2. 2’  :陰極、3ニゲリツ
ド、4ニアノード、5:フィラメント、6:多結晶シリ
コン、7:集束レンズ、a :偏向器。
FIG. 1 is a schematic diagram of an electron beam annealing device, FIG. 2 is a schematic diagram of a conventional electron gun, FIG. 3 is a schematic diagram of an electron gun shown as an embodiment of the gist of the present invention, and FIG. This shows the intensity distribution of the electron beam from the electron gun. 1: Impact type electron gun, 2. 2': cathode, 3 nigeride, 4 near node, 5: filament, 6: polycrystalline silicon, 7: focusing lens, a: deflector.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電子銃の陰極電子線放出面から放出された電子線を多結
晶物質上で走査し、該多結晶物質の結晶粒子径を増大化
或いは該多結晶物質を単結晶化する様になした装置にお
いて、前記陰極電子線放出面の中央部分を胸囲の部分に
対し窪ませたことを特徴とする電子線アニール装置。
In an apparatus in which an electron beam emitted from a cathode electron beam emission surface of an electron gun is scanned over a polycrystalline material to increase the crystal grain size of the polycrystalline material or to make the polycrystalline material into a single crystal. . An electron beam annealing device, characterized in that the central portion of the cathode electron beam emitting surface is depressed relative to the chest circumference.
JP4796283U 1983-03-31 1983-03-31 Electronic annealing device Pending JPS59152736U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4796283U JPS59152736U (en) 1983-03-31 1983-03-31 Electronic annealing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4796283U JPS59152736U (en) 1983-03-31 1983-03-31 Electronic annealing device

Publications (1)

Publication Number Publication Date
JPS59152736U true JPS59152736U (en) 1984-10-13

Family

ID=30178502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4796283U Pending JPS59152736U (en) 1983-03-31 1983-03-31 Electronic annealing device

Country Status (1)

Country Link
JP (1) JPS59152736U (en)

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