JPS59150437A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPS59150437A
JPS59150437A JP58022137A JP2213783A JPS59150437A JP S59150437 A JPS59150437 A JP S59150437A JP 58022137 A JP58022137 A JP 58022137A JP 2213783 A JP2213783 A JP 2213783A JP S59150437 A JPS59150437 A JP S59150437A
Authority
JP
Japan
Prior art keywords
wire
ball
gold
capillary
pot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58022137A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Yoshida
光宏 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58022137A priority Critical patent/JPS59150437A/en
Publication of JPS59150437A publication Critical patent/JPS59150437A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
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    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/781Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/78268Discharge electrode
    • HELECTRICITY
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    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8502Applying permanent coating, e.g. in-situ coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8503Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
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    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]

Abstract

PURPOSE:To improve junction intensity for the members to be joined and enhance reliability of junction by covering a ball formed at the end point with a melted film of gold in use of a wire other than the gold wire. CONSTITUTION:An inactive gas is injected from a first, second injection holes 12..., 13... of an injecting body 9 through a guide tube 10. Simulatneously, a power is supplied to a high frequency coil 16 and thereby the gold within a pot 14 is fused. A wire 5 is supplied for the specified amount and it is clamped by a clamp 4. Thereby, an electric torch or spark electrode is placed near to the end point of wire 5 and a ball 8 is formed. The capillary 2 is then moved up to the area just above the pot 14 and is then moved downward in the direction 17a. After, the ball 8 is momentarily dipped into the fused gold 18 in the pot 14, the capillary 2 is then moved upward again. As a result, the external surface of half-melted ball 8 is covered with the fused film of gold 19. Thereby, the capillary 2 is moved and ball bonding is carried out by pressing the ball 8 covered with the fused film 19 by the capillary 2 while the ultrasonic wave vibration is being applied.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、金ワイヤの代りに例えば銅ワイヤを用いるワ
イヤボンディング方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a wire bonding method using, for example, a copper wire instead of a gold wire.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

一般に、集積回路の組立に用いられるワイヤボンディン
グ方法においては、ガス火炎による加熱又は電気トーチ
による放電によシ金ワイヤ先端を溶融してボールを形成
させ、金ワイヤカニ押通されたキャピラリを第1ボンデ
ィング点であるベレットのパッドに押付けてボールボン
ディングしたのち、キャピラリを上下方向及びXY方向
に移動させてワイヤを繰出し、第2ボンディング点であ
るリードフレームのリード部にウェッジボンディングし
、しかるのちキャピラリを上昇、させてワイヤを切断す
る一連の動作を繰返すことにより、ワイヤの接続を行、
っている。ところで、近時、省資源及びコスト低減を目
的として、金ワイヤの代りに安価な金属から寿るボンデ
ィングワイヤのイ吏用−22試みられている。その一つ
として、アルミニウムワイヤを用いるワイヤボンディン
グがあるメ;、アルミニウムワイヤは、機械的特性が金
に比べて劣り、樹脂モールディングにより断線を生じて
しまい、樹脂モールドパッケージタイプのワイヤボンデ
ィングには適用できない欠点がある。この他に、銅ワイ
ヤを用いるワイヤボンディング力;ある力;、金ワイヤ
を用いた場合に比べ接合性が著しく劣り実用化の障害と
なっている。そこで、銅ワイヤ゛を用いたワイヤボンデ
ィングの接合性の改善が要望されていた。
Generally, in the wire bonding method used for assembling integrated circuits, the tip of the gold wire is melted to form a ball by heating with a gas flame or electric discharge with an electric torch, and the capillary through which the gold wire is pushed through is first bonded. After ball bonding by pressing the capillary against the pad of the bullet, which is the point, move the capillary in the vertical direction and the XY direction to feed out the wire, wedge bonding to the lead part of the lead frame, which is the second bonding point, and then raise the capillary. , connect the wires by repeating the series of actions of cutting the wires.
ing. Incidentally, recently, for the purpose of saving resources and reducing costs, attempts have been made to create bonding wires made of inexpensive metals instead of gold wires. One such method is wire bonding using aluminum wire; aluminum wire has inferior mechanical properties compared to gold, and wire breakage occurs when resin molding occurs, so it cannot be applied to resin mold package type wire bonding. There are drawbacks. In addition, the wire bonding force using a copper wire is significantly inferior to that using a gold wire, which is an obstacle to practical use. Therefore, it has been desired to improve the bonding properties of wire bonding using copper wire.

〔発明の目的〕[Purpose of the invention]

本発明は、上記事情を参酌してなされたもので、金ワイ
ヤ以外の例えば銅ワイヤを用いた場合のワイヤボンディ
ングの接合性を向上させることのできるワイヤボンディ
ング方法を提供することを目的とする。
The present invention has been made in consideration of the above circumstances, and an object of the present invention is to provide a wire bonding method that can improve the bonding performance of wire bonding when using a copper wire other than a gold wire, for example.

〔発明の概要〕[Summary of the invention]

金ワイヤの代シに例えば銅ワイヤを用い、ワイヤ先端に
形成したボールを溶融した余栄に浸漬して、ボールを金
の溶融被膜によシ被覆したのちボールボンディングを行
うものである。
For example, a copper wire is used as a substitute for the gold wire, and a ball formed at the tip of the wire is immersed in the molten residue to coat the ball with a molten gold film, followed by ball bonding.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を図面を参照して詳述する。 Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.

第1図は、本実施例のワイヤボンディング方法に用いら
れるワイヤボンディング装置を示している。本体(1)
の前面からは、先端にキャピラリ(2)が設けられた超
音波ホーン(3)及びこの超音波ホーン(3)の上方か
らクランパ(4)が突出している。さらに、クランパ(
4)の上方からは銅製のワイヤ(5)が導出され、この
ワイヤ(5)はクランパ(4)を介して上記キャピラリ
(2)に挿通されている。上記超音波ホーン(3)は、
本体(1)に内蔵された図示せぬ駆動源により上下方向
及びとの上下方向に直角力XY方向に揺動駆動されるよ
うになっている。また、クランプ<(4)は、詳細は図
示しないが、開閉駆動される一対の挾持片を有し、上記
超音波ホーン(3)の揺動に同期して開閉しワイヤ(5
)を一定の状態に保つようになっている。また、キャピ
ラリ(2)の下端には、図示せぬヒータを内蔵したヒー
タ台(6)が対向して配置され、とのヒータ台(6)上
には被接合部材としてのペレット(7)が固定されたリ
ードフレーム(7a)が供給されるようになっている。
FIG. 1 shows a wire bonding apparatus used in the wire bonding method of this embodiment. Main body (1)
An ultrasonic horn (3) having a capillary (2) at its tip and a clamper (4) protrude from above the ultrasonic horn (3). In addition, the clamper (
A copper wire (5) is led out from above 4), and this wire (5) is inserted into the capillary (2) via a clamper (4). The ultrasonic horn (3) is
A driving source (not shown) built into the main body (1) causes the main body (1) to swing in the vertical direction and in the vertical direction with a right angle force in the XY direction. Although the details are not shown, the clamp (4) has a pair of clamping pieces that are driven to open and close, and opens and closes in synchronization with the swinging of the ultrasonic horn (3).
) is kept constant. Furthermore, a heater stand (6) containing a built-in heater (not shown) is arranged opposite to the lower end of the capillary (2), and a pellet (7) as a member to be joined is placed on the heater stand (6). A fixed lead frame (7a) is supplied.

そして、本体(1)に隣接して図示せぬ電気トーチ又は
スノく−り電極がキャピラリ(2)に対して進退自在に
設けられ、ワイヤ(5)の先端にボール(8)を形成す
るようになっている。
Then, an electric torch or snowboard electrode (not shown) is provided adjacent to the main body (1) so as to be able to move forward and backward with respect to the capillary (2), so as to form a ball (8) at the tip of the wire (5). It has become.

このボール(8)が超音波ホーン(3)の揺動により上
記ヒータ台(6)上で加熱されたペレット(7)のアル
ミニウム製の金属膜に圧着されるようになっている。
This ball (8) is pressed against the aluminum metal film of the pellet (7) heated on the heater stand (6) by the swinging of the ultrasonic horn (3).

また、円環状の吹出体(9)が、との吹出体(9)に接
続され不活性ガスを吹出体(9)に供給する導管(11
)を介して超音波ホーン(3)に取着された連結具圓に
よシ、キャピラリ(2)と同軸かつキャピラリ(2)と
一体的に動くように配設されている。上記吹出体(9)
は、第2図に示すように、パイプ材によシ形成されてい
て、パイプ材の内側である内周面には第1の噴出孔(1
21・・・が、ベレット(7)に対向する下面には第2
の噴出孔(I3)・・・が、それぞれ周方向に沿って等
間隔で多数個穿設されている。一方、キャピラリ(2)
の側方部には、金が収納されたセラミック製のポット(
ロ)が耐熱金属製の支持板(151によシ支持されてい
る。
Further, an annular blowing body (9) is connected to the blowing body (9) and a conduit (11) is connected to the blowing body (9) and supplies inert gas to the blowing body (9).
) is arranged coaxially with the capillary (2) and so as to move integrally with the capillary (2). The above blowing body (9)
As shown in FIG.
21..., but a second
A large number of nozzle holes (I3) are formed at equal intervals along the circumferential direction. On the other hand, capillary (2)
On the side of the is a ceramic pot containing gold (
(b) is supported by a support plate (151) made of heat-resistant metal.

そして、ポットα荀には高周波加熱コイル(16)が巻
回され、この高周波加熱コイル←Qに給電することによ
りボッ) (14)に収納された金を溶融するようにな
っている。
A high-frequency heating coil (16) is wound around the pot α, and by supplying power to the high-frequency heating coil Q, the gold stored in the pot α is melted.

つぎに、上記構成のワイヤボンディング装置を用いた本
実施例のワイヤボンディング方法について述べる。まず
、窒素ガス、アルゴンガス等の不活性ガス供給源から、
不活性ガスを導管住〔を介して吹出体(9)の第1及び
第2の噴出孔(12+・・・、 (131・・・から噴
出させる。すると、吹出体(9)よシ下方向に噴出する
不活性ガスによシ吹出体(9)の下側の空間が酸化に対
してシールドされるとともに、吹出体(9)よυ半径方
向に噴出する不活性ガスによシ吹出体(9)の上面側か
ら下面側に空気が巻き込まれるのが防止される。辷れと
同時に、高周波コイル(1eに給電してポットI中の金
を溶融する。ついで、ワイヤ(5)を所定量繰出したの
ち、クランプ(4)にてクランプする。かくて、電気ト
ーチ又はスパーク電極をワイヤ(5)の先端近傍に接近
させ、ボール(8)を形成する。それから、キャピラリ
(2)をポット<141の直上位置まで移動させるとと
もに、第3図矢印(17a)方向に下降させ、ボール(
8)をポットI中の溶融している金(L印に瞬間的に浸
漬したのち、矢印(17b)方向に上昇させる。その結
果、半溶融体状のボール(8)外表面は第4図に示すよ
うに金の溶融被膜α9によシ覆われる。しかして、キャ
ピラリ(2)をヒータ台(6)上に位置決め・予熱され
たベレット(7)上方に移動させ、超音波振動を付加し
つつ溶融被膜(Lωによシ覆われたボール(8)をキャ
ピラリ(2)で加圧してボールボンディングを行う。こ
のようにして行われたポールボンディングの接合強度は
、金ワイヤを用いた場合とほぼ同程度の接合強度を得る
ことができる。ちなみに、線径50μmの銅ワイヤを用
いて本実施例のワイヤボンディング方法を適用した場合
、接合強度が150〜230pfのものを得ることがで
きた。これは、現在、接合強度が100#f以上であれ
ば実用化されていることからみて、十分な接合性及び信
頼性を有している。このように、本実施例のワイヤボン
ディング方法の接合強度が優れているのは、ボール(8
)を構成している銅の酸化が金の溶融被膜!1.9)に
よシ防止されることと、圧着時にペレット(力に対して
銅よシも親和性の高い金が介在していることにより接合
性が向上することによると考えられる。
Next, a wire bonding method according to this embodiment using the wire bonding apparatus having the above configuration will be described. First, from an inert gas source such as nitrogen gas or argon gas,
Inert gas is ejected from the first and second ejection holes (12+..., (131...) of the ejection body (9) through the conduit.Then, the inert gas is ejected from the ejection body (9) in the downward direction. The space under the blower (9) is shielded from oxidation by the inert gas ejected from the blower (9). 9) Air is prevented from being drawn in from the top side to the bottom side.At the same time as the twisting, power is supplied to the high frequency coil (1e) to melt the gold in the pot I.Then, the wire (5) is heated by a predetermined amount. After it is fed out, it is clamped with a clamp (4).An electric torch or spark electrode is brought close to the tip of the wire (5) to form a ball (8).Then, the capillary (2) is placed in a pot. The ball (
8) is momentarily immersed in the molten gold (marked L) in pot I, and then raised in the direction of the arrow (17b). As a result, the outer surface of the semi-molten ball (8) is as shown in Figure 4. The capillary (2) is then positioned on the heater stand (6) and moved above the preheated pellet (7), and ultrasonic vibrations are applied. Ball bonding is performed by pressurizing the ball (8) covered with a molten coating (Lω) with a capillary (2).The bonding strength of pole bonding performed in this way is comparable to that when gold wire is used. Almost the same bonding strength can be obtained.Incidentally, when the wire bonding method of this example was applied using a copper wire with a wire diameter of 50 μm, a bonding strength of 150 to 230 pf could be obtained. This has sufficient bonding performance and reliability considering that it is currently in practical use if the bonding strength is 100 #f or more. The ball (8
) The oxidation of the copper that makes up the molten coating of gold! 1.9), and the bondability is improved by the presence of pellets (gold, which has a higher affinity for force than copper) during crimping.

なお、上記実施例においては、ボッ) C14)を固定
しているが、ポットI側を適時にキヤ、ピラリ(2)に
対して進退させ、ボール(8)を浸漬するようにしても
よい。また、不活性ガスの噴出は円環状吹出体(9)に
よることなく、キャピラリ(2)周囲に配置された複数
のノズルから噴出させるようにしてもよい。
In the above embodiment, the pot (C14) is fixed, but the pot I side may be moved forward and backward with respect to the gear and pillar (2) at appropriate times to immerse the ball (8). Further, the inert gas may be ejected from a plurality of nozzles arranged around the capillary (2) without using the annular blower (9).

さらに、本発明のワイヤボンディング方法ハ、ベレット
(7)をヒータ台(6)等によシ加熱しない場合にも良
好な接合性を得ることができる。さらにまた、本発明の
ワイヤボンディング方法は、今岐の温度を1090℃以
上にしておけば、銅ボール(8)を電気トーチで造る必
要なく、銅ワイヤ(5)を溶融金a81に浸漬すること
によ)ボール(8)を形成し、なおかつ溶融被膜α・を
形成することができる。
Furthermore, in the wire bonding method of the present invention, good bonding performance can be obtained even when the pellet (7) is not heated by a heater stand (6) or the like. Furthermore, the wire bonding method of the present invention allows the copper wire (5) to be immersed in molten metal A81 without the need to create the copper ball (8) with an electric torch, as long as the temperature of the wire is set to 1090° C. or higher. ) It is possible to form a ball (8) and also form a molten coating α.

〔発明の効果〕〔Effect of the invention〕

本発明は、金ワイヤ以外のワイヤを用いる場合において
、先端に形成したボールを金の溶融被膜によシ被榎する
ようにしたので、被接合部材に対する接合強度が向上す
るとともに、接合の信頼性を高めることができる。
In the present invention, when a wire other than gold wire is used, the ball formed at the tip is covered with a molten gold coating, which improves the bonding strength to the members to be bonded and improves the reliability of the bond. can be increased.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例のワイヤポンティング方法に
用いられるワイヤボンディング装置の側面図、第2図は
第1図のワイヤボンディング装置の吹出体の断面図、第
3図はワイヤ先端に形成されたボールの溶融した金への
浸漬を示す斜視図、第4図は金の溶融被膜を被着したボ
ールの断面図である。 (2):キャピラリ、      (5) :ワ イ 
ヤ。 (8)二ボール、     θ9:溶融被膜。 代理人 弁理士  則 近 憲 佑 (ほか1名) 策 1 図
FIG. 1 is a side view of a wire bonding device used in a wire bonding method according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of the blowing body of the wire bonding device of FIG. 1, and FIG. FIG. 4 is a perspective view showing the immersion of the formed ball in molten gold; FIG. 4 is a cross-sectional view of the ball coated with a molten gold coating; (2): Capillary, (5): Wire
Ya. (8) Two balls, θ9: Melted coating. Agent Patent attorney Noriyuki Chika (and 1 other person) Strategy 1 Diagram

Claims (2)

【特許請求の範囲】[Claims] (1)キャピラリに通された全以外の金属からなるワイ
ヤの先端部にボールを形成し、このボールを被接合部材
に圧着させるワイヤボンディング方法において、上記ボ
ールを溶融した金に浸漬し上記ボールを金の溶融被膜に
よシ被覆することを特徴とするワイヤボンディング方法
(1) In a wire bonding method in which a ball is formed at the tip of a wire made of a metal other than the metal passed through a capillary, and the ball is crimped onto a member to be bonded, the ball is immersed in molten gold. A wire bonding method characterized by coating with a molten gold film.
(2)ワイヤは銅からなることを特徴とする特許請求の
範囲嬉1項記載のワイヤボンディング方法。
(2) The wire bonding method according to claim 1, wherein the wire is made of copper.
JP58022137A 1983-02-15 1983-02-15 Wire bonding method Pending JPS59150437A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58022137A JPS59150437A (en) 1983-02-15 1983-02-15 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58022137A JPS59150437A (en) 1983-02-15 1983-02-15 Wire bonding method

Publications (1)

Publication Number Publication Date
JPS59150437A true JPS59150437A (en) 1984-08-28

Family

ID=12074494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58022137A Pending JPS59150437A (en) 1983-02-15 1983-02-15 Wire bonding method

Country Status (1)

Country Link
JP (1) JPS59150437A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101195265B1 (en) 2010-09-09 2012-11-14 에스케이하이닉스 주식회사 Method for wire bonding
US8313015B2 (en) 2008-06-10 2012-11-20 Kulicke And Soffa Industries, Inc. Gas delivery system for reducing oxidation in wire bonding operations

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8313015B2 (en) 2008-06-10 2012-11-20 Kulicke And Soffa Industries, Inc. Gas delivery system for reducing oxidation in wire bonding operations
KR101195265B1 (en) 2010-09-09 2012-11-14 에스케이하이닉스 주식회사 Method for wire bonding

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