JPS59148431A - Amplifier circuit - Google Patents

Amplifier circuit

Info

Publication number
JPS59148431A
JPS59148431A JP58022208A JP2220883A JPS59148431A JP S59148431 A JPS59148431 A JP S59148431A JP 58022208 A JP58022208 A JP 58022208A JP 2220883 A JP2220883 A JP 2220883A JP S59148431 A JPS59148431 A JP S59148431A
Authority
JP
Japan
Prior art keywords
amplifier
circuit
signal
potential
reference voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58022208A
Other languages
Japanese (ja)
Inventor
Hirotoshi Sawada
沢田 博俊
Takeshi Takeya
武谷 健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58022208A priority Critical patent/JPS59148431A/en
Publication of JPS59148431A publication Critical patent/JPS59148431A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0021Modifications of threshold

Abstract

PURPOSE:To increase gain and operating margin by using an amplifier where a logical threshold voltage is variable in an amplifier such as CMOS inverter, and controlling automatically a logical threshold value to bring it to the vicinity of a reference voltage. CONSTITUTION:When the logical threshold value of a simulating amplifier A1 and a main amplifier A0 is at a potential higher than a reference voltage VR1 in the initial state, an output signal O1 of the simulating amplifier A1 goes to a level higher than a reference voltage VR2 and an output signal O2 goes to a negative potential. Thus, the potential of a control signal Vc1 is shifted negatively by a control signal generating circuit G1. The logical threshold value of the simulating amplifier A1 and the main amplifier A0 is shifted to a low potential by this control signal Vc1. When the reference voltage VR1 and the logical threshold value are made equal after a series of operations continue, the potential of the output signal O1 and the reference voltage VR2 is made equal and when the potential of the outut signal O2 is reduced to zero V, the control signal Vc1 is held.

Description

【発明の詳細な説明】 (産業上の利用分野) このづ6明tよ、半導体集積回路に用いらlしる尚利付
、低泊5に一力で、大きい動作マージンを待つ増幅回路
に関するものでるる。
[Detailed Description of the Invention] (Industrial Application Field) This article relates to an amplifier circuit used in semiconductor integrated circuits that is advantageous in terms of interest and low cost and has a large operating margin. Out.

(従来技術) 従来増幅回路には数多くの線類がわり、CMOSインバ
ータも増幅器の一柚として用いらtしている。CM O
Sインバータは、第1図に示−y−回路′″′c6す、
Pチャネルトランジスタ(JとNチャ不ルトフンシスタ
Q;のケートr互いに接続し、こIしに入力信号Ir’
に人力し、Pナヤイ・ルトランジスタのソースに第lの
亀m−VDDを供給し、nナヤイ・ルトランジスタのソ
ースに第2の′a源■田紮供和し、pナヤネル、nチャ
坏ルトランジスタのトレインケ互に接続し−(出力信号
α奮取出している。以下の説明はVDD k高市、圧、
VBB’に低電圧とじ1行う。CM OSインバータの
伝達特性は、第2図に示すように、調理しさい埴−圧V
THL伺近で急激に出力信号が変化ツーる%徴rもって
いる。この論理しきいイ直′亀圧はpチャネルトランジ
スタとnチャネルトランジスタのしきい値電圧+′血流
利得比で決する。ここで、人力(8−Qのハイレベルと
ロウレベルの中間電位全参照電圧とし、商埋しきい値電
圧葡参照電圧付近(rc設矩うると人さな利得か得ら1
する。しかし、この大ぎなオリ得の倚らjしる動作饋域
が小であるため、亀OM奄圧やフロセス定数の変動にょ
9餉理しきい値電圧が度化すると、利得の小なる饋域に
励r卜点が移ってしまい、増幅器として動作しなくなる
(Prior Art) Conventional amplifier circuits include a large number of wires, and CMOS inverters are also used as a part of the amplifier. C.M.O.
The S inverter is shown in FIG.
The gates of the P-channel transistors (J and N-channel transistors Q) are connected together, and the input signal Ir'
manually, supply the lth voltage m-VDD to the source of the p-channel transistor, supply the second source of a to the source of the n-channel transistor, and connect the p-channel and n-channel The trains of the transistors are connected to each other and the output signal α is extracted.
Perform low voltage binding 1 to VBB'. The transfer characteristics of the CMOS inverter are as shown in Figure 2.
There is a %r sign that the output signal suddenly changes when approaching the THL. This logical threshold voltage is determined by the threshold voltage+'blood flow gain ratio of the p-channel transistor and the n-channel transistor. Here, the intermediate potential between the high level and low level of 8-Q is set as the total reference voltage, and the commercial threshold voltage is around the reference voltage (rc setting square) and the human gain is 1.
do. However, since the operating range in which this large gain occurs is small, as the threshold voltage increases due to fluctuations in the OM force and the Froese constant, the gain becomes smaller in the operating range. The excitation point shifts to , and the amplifier no longer functions as an amplifier.

このため、この回路は、TTL入カインクフエイス回路
のように、入力信号の振幅の大きい場合に限って用いら
れて寂り、h:cL人カインタフエイス回路のように入
力信号振幅が小になると用いることができなかった。
For this reason, this circuit is used only when the amplitude of the input signal is large, such as the TTL input interface circuit, and when the input signal amplitude is small, such as the h:cL input interface circuit. I couldn't use it.

(発明の目的) 本発明は上記の欠点を改嵜するために提案さfしたもの
で、利得が大きく、かつ動作マージンの大きい増幅回路
を提供することを目的とするものである。
(Object of the Invention) The present invention was proposed in order to improve the above-mentioned drawbacks, and an object of the present invention is to provide an amplifier circuit with a large gain and a large operating margin.

(@明の構成) 上記の1目的全達成するために、本発明は入力信号と論
理しきい値電圧との夫小関係を識別し、該識別の結果に
対応してハイレベルおよびロウレベルで表現さnる2値
の信1号r出カする増幅回路VLh−いて、前dピ人カ
情号が入力δtしる本アンプ、参照電圧が入力さtLる
模擬アン7及び該模擬アン7の出力屯圧勿観測して制御
信号を発生するす辰葡共11if+ L、該制御信号e
(よυ前記本アンプ及び俣擬アン゛ブの論理しきい値電
圧を制作11丁ゐことt%似とする増幅回路ヶ発明の匁
旨と□するものである。
(@Ming's configuration) In order to achieve all of the above objectives, the present invention identifies the relationship between the input signal and the logic threshold voltage, and expresses it as a high level and a low level corresponding to the result of the identification. There is an amplifier circuit VLh which outputs a binary signal 1r, the main amplifier to which the front voltage information is input δt, the simulated amplifier 7 to which the reference voltage is inputted, and the simulated amplifier 7 to which the reference voltage is inputted. 11if+L, which generates a control signal by observing the output pressure, and the control signal e.
(The purpose of the invention is to create an amplifier circuit in which the logic threshold voltages of the present amplifier and the Matata pseudo-amplifier are made similar to t%.

使約丁扛は、本発明は増幅回路に2いて、論理しきい1
1Ik電圧が可変となるアンフ全用い、その論理しさい
116乞参照電圧句近に自動的に設定する制御機能葡句
加すること全特徴とするものである。
The general rule is that the present invention has two logic thresholds in the amplifier circuit.
The present invention is characterized by the use of an amplifier in which the 1Ik voltage is variable, and the addition of a control function to automatically set the voltage close to the 116% reference voltage.

次に本発明の実施?ll會象付図而に面いて説明する0
なお実施例は一つの例示でろって、本発明の精神を逸脱
しない範囲で、檎々の変更あるいは改良を行いうろこと
は言うまでもない。
Next, implementation of the present invention? ll Explain the situation with the diagram 0
It should be noted that the embodiments are merely illustrative, and it goes without saying that changes or improvements may be made without departing from the spirit of the present invention.

第3図は本発明の増幅回路の第1の実施例でろって、模
擬アンスA11本アン7− Ao、比較(ロ)路馬、制
御信号発生回路G、で構成され、模擬アシフAIは#熱
電圧vR1制御(g号vc1を入力して出方信号01奮
発生し、比較回路B1は01と参照電圧■。
FIG. 3 shows the first embodiment of the amplifier circuit of the present invention, which is composed of 11 simulated amplifiers A, 7-Ao, a comparison (b) circuit, and a control signal generation circuit G, and the simulated amplifier AI is # Thermal voltage vR1 control (G No. VC1 is input, output signal 01 is generated, comparison circuit B1 is 01 and reference voltage ■.

全人力し1出力信号0+t”発生し、制御信号発生回路
G1はOtk人力して制御信号■cを発生し、本アンプ
A。は人力信号工、と制御信号Vc k人力! して出力信号Osk発生している。模擬アンプA。
Full human power output signal 1 output signal 0+t'' is generated, and the control signal generation circuit G1 is operated manually to generate control signal ■c. Occurs.Mock amplifier A.

と本アンプAOは、そ扛そn人力信号VR,、I、の反
転信号0+ r Os’l:出力し、信号”R4* I
I 7>E 77プA、。
This amplifier AO outputs the inverted signal 0+ r Os'l of the human input signal VR,,I, and outputs the signal "R4*I".
I 7>E 77 puA.

Aoの論理しきいfuim圧より低電位のとき出力1g
号0..0.がハイになり、逆に信号VR,,I、が尚
電位のとき0..0.がロクになる。アン1A、 、 
Aoは制御信号VC8によってそfLぞ扛の論理しきい
値電圧が制御さtし、ここでは信号vc、が茜電位にな
ると論理しきい値電圧が尚電位にl夛、信号vc1が低
電位になると論理しきい値電圧が低電位になるように制
御されるように構成さrしている。また、信号vR1は
入力18号■のハイレベルとロワレベルの中間に設足さ
rLs信号VR2は出力(Qi号O1のハイレベルとロ
ワレベルの中IW4に設定芒れている。
Output 1g when the potential is lower than the logical threshold fuim pressure of Ao
No. 0. .. 0. becomes high, and conversely, when the signal VR,,I, is still at potential, 0. .. 0. becomes rocky. Anne 1A, ,
The logic threshold voltage of Ao is controlled by the control signal VC8, and when the signal VC reaches the red potential, the logic threshold voltage goes to the low potential, and the signal VC1 goes to the low potential. In this case, the logic threshold voltage is controlled to be a low potential. Further, the signal vR1 is set between the high level and the low level of the input No. 18 (2), and the rLs signal VR2 is set at IW4 between the high level and the low level of the output (Qi) O1.

比較回路B、は信号O3とVR2の電位差音検出して出
力信号Oak発生し、信号0.が信号VR1より高電位
のとき信号O!が負電位、信号O1が信号尭。
The comparator circuit B detects the potential difference sound between the signals O3 and VR2, generates an output signal Oak, and outputs a signal 0. When the potential is higher than the signal VR1, the signal O! is a negative potential, and signal O1 is a signal.

よジ低電位のとき信号02が正電位になる。制御信号発
生回路G1は入力信号0.によって制御信号VcIを制
御し、入力信号0!が正のとき制御信号VC’t^電位
の方向へ、人カイH号02が負のとき制御信号vc、i
低電位の方向ヘシフトさせる。
When the potential is extremely low, the signal 02 becomes a positive potential. The control signal generation circuit G1 receives an input signal 0. The control signal VcI is controlled by the input signal 0! When is positive, the control signal VC't^ is in the direction of the potential, and when the human chi H No. 02 is negative, the control signal vc,i
Shift to lower potential.

また模擬アンプA、と本アンプA。の論理しきい値は互
いに等しくなるように制御3 fLる。
Also, simulated amplifier A, and real amplifier A. The logic thresholds of 3 fL are controlled to be equal to each other.

次に本発明の第1の実施例の動作を以下に説明する。Next, the operation of the first embodiment of the present invention will be explained below.

いま、初期状態において、模擬アンプA1と本アンプA
。の論理しさい憧が参照電圧■R1よp高電位でめった
とする、このとき模擬アンプA1の出力信号O5はハイ
レベルになって参照電圧外。
Now, in the initial state, the simulated amplifier A1 and the main amplifier A
. Suppose that the logical result rarely occurs at a higher potential than the reference voltage R1, and at this time, the output signal O5 of the simulating amplifier A1 becomes high level and is outside the reference voltage.

より面電位になり、し7ζがって出力信号O3は負の電
位となる。よって、制御信号発生回路G、にヨシ制御1
d号■c、の電位が負の方向にシフトする。この制御信
号vc、によシ、模擬アンプA、ど本アンプAo(7)
−理しきい値が低電位にシフトする。この一連の動作が
続いて、参照′亀圧鳳、と論理しさい埴が等しくなると
、出力信号01と参照電圧外、の電位が等しくなり、出
力信号O1の電位が苓Vになってその時点での開側1信
号VC5の電位が保持される。アンプA+ + Ao’
J 8R理しきい値が参照電圧■R1より低゛電位V(
なった場合は、上記と逆の動作により参照電圧vRと論
理しきい値が等しくなるまで制御信号vc1が変化する
Therefore, the output signal O3 becomes a negative potential. Therefore, the control signal generation circuit G,
The potential of No. d and ■c shifts in the negative direction. This control signal VC, model amplifier A, real amplifier Ao (7)
-The physical threshold shifts to a lower potential. This series of operations continues, and when the reference voltage becomes equal to the logic value, the potentials of the output signal 01 and the voltage outside the reference voltage become equal, and the potential of the output signal O1 becomes V, and at that point The potential of the open side 1 signal VC5 at is held. Amplifier A+ + Ao'
J 8R threshold voltage is lower than reference voltage ■R1 Potential V (
If so, the control signal vc1 changes until the reference voltage vR and the logic threshold become equal to each other by an operation opposite to the above.

この一連の動作によp1アンプA、とAOの論理し合い
1fiが常に参照電圧vR3に等しくなるように制御さ
tしる。
Through this series of operations, the logic of the p1 amplifiers A and AO is controlled so that 1fi is always equal to the reference voltage vR3.

斜上のように、参照電圧VR,、VR,i本アンプA(
1の利得の大きい動作頭載に設定することにより、動作
マージンが大きく、かつ利得の大きい増幅回路奮実現す
ることができる。
As shown diagonally above, the reference voltage VR, , VR, i amplifier A (
By setting the operation head with a large gain of 1, it is possible to realize an amplifier circuit with a large operating margin and a large gain.

第4図は本発明の第2の実施例ケ示すものであり、模擬
アンプん、A4.本アンプ入、比較回路B意+Bj+制
御信号発生回路G、で構成さrLs僕擬アンプAjは参
照電圧VR3と制#信号VC,k人力して出力信号O6
會発生し1.模擬アンプA4は参照電圧外、と制御HM
号■。、會入力して出力信号Oat”発生し、比較回路
Bt#′i出力信号04と参照電圧vR,Th入力して
出力信号06全発生し、比較回路Bjは出力信号O8と
参照電圧vR4t−人力しで出力信号0り全発生し、制
御信号発生回路G、は出力信号06. O?會大入力て
制御信号Vc、’に発生し、本アングムは制御信号vc
!と入力信号1tk入力して出力信号Os奮発生してい
る。ここで本アンプへ〇の論理しきい1@電圧t VT
HLとし、模擬アンプんの論理しきい値電圧がVT)L
L+△V、模擬アンプA、の論理しきい値電圧がVTH
L−ハ■になるように設定する。模擬アンプAS t 
Aa r本アンプA0.比較回路Bt、Bsの機能は本
発明の第1の実施例と同じでめシ、制御信号発生回路G
、は出力信号06がハイのとき制OII信号VC,全高
電位側にシフトさせ、出力信号07がハイのとき制御信
号vo、 k低電位側にシフトδぜ、出力信号Us、O
vが共にロクのとき、その時点の制N信号Vc、の電位
を保持する機能に%っている。
FIG. 4 shows a second embodiment of the present invention, in which a simulated amplifier, A4. It is composed of a main amplifier input, a comparison circuit B + Bj + a control signal generation circuit G, and the pseudo amplifier Aj has a reference voltage VR3 and a control # signal VC, and outputs a signal O6 manually.
A meeting occurred 1. The simulation amplifier A4 is outside the reference voltage, and the control HM
No. ■. , the output signal Oat'' is generated by inputting the comparator circuit Bt#'i output signal 04 and the reference voltage vR, Th, and the output signal 06 is generated by inputting the output signal O8 and the reference voltage vR4t - human power. The control signal generation circuit G generates the output signal 06.
! The output signal Os is generated by inputting the input signal 1tk. Here, to this amplifier 〇 logic threshold 1 @ voltage t VT
HL, and the logic threshold voltage of the simulated amplifier is VT)L.
L+△V, the logic threshold voltage of simulated amplifier A is VTH
Set it so that it becomes L-C■. Simulated amplifier AS t
Aa r main amplifier A0. The functions of the comparison circuits Bt and Bs are the same as those in the first embodiment of the present invention, and the control signal generation circuit G
, when the output signal 06 is high, the OII signal VC is shifted to the full high potential side, and when the output signal 07 is high, the control signal vo, k is shifted to the low potential side δ, and the output signal Us, O
When both v and V are low, the function is to hold the potential of the control N signal Vc at that time.

次に本発明の第2の実施例の動作説明全行う。Next, a complete explanation of the operation of the second embodiment of the present invention will be given.

まず、箇理しきい1@電圧VTHLが■R1−ΔVから
VR11士△Vの間に設足さrして2シ2・ΔVか人力
信号工2の信号振幅より小さい場合を考えると、模擬ア
ンプA、の論理しきい値電圧VTHL十ムVが参照電圧
vRsより高′電位でめゐの−(′出力信号0゜が高電
位になり、模擬アンプんの肉塊しきい値電圧VTHL−
ムVが参照電圧vR3より低電位でろるので出力18号
O5か低電位になる。そして、出力信号04が参照電圧
VR,より尚電位であるので出力毎号06が低電位にな
り、参照電圧VR4が出力信号03より高電位でろるの
で出力信号0)が低電位になる。したがって、制御信号
発生回路G2の入力信号06,0?が共に低電位になる
ので、その時の制御毎号Vc、の電位が保持される。こ
の時入力信号■2のハイレベルはVTHLよシ高電位で
るり、入力信号I2のロウレベルはVTHLより低電位
でろるりで、本アンプの出力信号08には、入力信号I
、の反転信号が出力さ扛る。次に、論理しきい値電圧V
THLが変動してvR1+ハVよシ高電位になった場合
を考えると、模擬アンプAsの論理しきい値電圧′vT
HL+ム■は参照電圧VRsよシ高電位であるので出カ
イ3号04はSJ亀電位1まであり、模擬アンプA4の
論理しきい値電圧VTHL−ム■は参照を圧vR1より
高電位になるので出力信号08が低電位から尚電位に変
化する。したがつ又比較回路B、の出力信号O?が尚′
電位になり、制御信号発生回路G2により制御(g号V
。2が低電位側にシフトちれる。この結果模擬アンズA
j。
First, consider the case where the voltage VTHL is set between ■R1-ΔV and VR11ΔV, and is smaller than the signal amplitude of the human signal generator 2, which is 2×2・ΔV. When the logic threshold voltage VTHL of the amplifier A is at a higher potential than the reference voltage vRs, the output signal 0° becomes a high potential, and the lump threshold voltage VTHL of the simulated amplifier becomes
Since the voltage V is at a lower potential than the reference voltage vR3, the output No. 18 O5 becomes a low potential. Since the output signal 04 has a lower potential than the reference voltage VR, each output 06 has a low potential, and since the reference voltage VR4 has a higher potential than the output signal 03, the output signal 0) has a low potential. Therefore, the input signal 06,0? of the control signal generation circuit G2? Since both have a low potential, the potential of each control number Vc at that time is held. At this time, the high level of input signal 2 is at a higher potential than VTHL, and the low level of input signal I2 is at a lower potential than VTHL.
, the inverted signal is output. Next, the logic threshold voltage V
Considering the case where THL fluctuates and becomes a higher potential than vR1+V, the logical threshold voltage of the simulated amplifier As'vT
Since HL+mu is at a higher potential than the reference voltage VRs, the output No. 3 04 is up to the SJ turtle potential 1, and the logic threshold voltage VTHL-mu of the simulated amplifier A4 is at a higher potential than the reference voltage vR1. Therefore, the output signal 08 changes from low potential to low potential. However, the output signal O of comparison circuit B? However,
potential, and is controlled by the control signal generation circuit G2 (g V
. 2 is shifted to the lower potential side. The result is simulated apricot A
j.

んと本アンプA0の論理しきい値が低電位側にシフトし
、この動作は銅塩しきい値′電圧VTHLがVR8十△
■よυ低′電位になる1で続く。この動作が完了すると
模擬アンプA4の出力信号O1lが再ひ低電位になり、
比較回路B、の出力信号6が低電位になって、この時の
制御信号■c、の電位が保持さjLる。最後に論理しさ
い値電圧VTHI、がVR,−ムVよシ低電位に変動し
た場@r′に考えると、模擬アンプA3の論理しきい1
直嵐圧VTHL+ハVが参照電圧vR5より低電位にな
り、比較回路B2の出力4H号06が低電位になって制
御信号Vc、が高電位側にシフトする。この動作は論理
しきい値電圧VTHLがVR3−△Vニジ尚電位になる
まで続く。
The logic threshold of this amplifier A0 shifts to the lower potential side, and this operation causes the copper salt threshold voltage VTHL to be VR80△
■Continues at 1, which becomes a low potential. When this operation is completed, the output signal O1l of the simulation amplifier A4 becomes low potential again.
The output signal 6 of the comparator circuit B becomes a low potential, and the potential of the control signal c at this time is held. Finally, if we consider that the logical threshold voltage VTHI changes to a lower potential than VR, - V, then the logical threshold 1 of the simulated amplifier A3
The direct storm pressure VTHL+V becomes a lower potential than the reference voltage vR5, the output No. 4H 06 of the comparator circuit B2 becomes a low potential, and the control signal Vc shifts to the high potential side. This operation continues until the logic threshold voltage VTHL reaches a potential of VR3-ΔV.

以上の一連の動作により、論理しきい値電圧vTゆが変
動して猫、±△Vの電圧頭載紫外れると、制御信号Vc
、の電位かシフトしてVTHL力S■R。
As a result of the above series of operations, when the logic threshold voltage vT fluctuates and goes outside the voltage range of ±△V, the control signal Vc
, and shift the potential of VTHL force S■R.

±ΔVの電圧領域内になるように制御さtしる。The voltage is controlled to be within the voltage range of ±ΔV.

第5図は本発明の第3の実施例會示すも(/、1″″C
:るり、模擬アンプA4 r本アンプAOI比較回路B
、。
FIG. 5 shows a third embodiment of the present invention (/, 1″″C
: Ruri, simulated amplifier A4 r real amplifier AOI comparison circuit B
,.

B111制御毎号発生回路G、で構成さ扛、各回路〕゛
ロツク機能は本発明の第2の実施例と1司じで委9、模
擬アンプA6の論理しきい値電圧を本アンプと同じVT
HLVcなるように設定チtしている点が異なる。また
、比較回路B4に入力する参照電圧VR,はVR5−△
vRに設定さrL、比蛤回路B6に入力する参照電圧V
R,はvRIs+ムVRに設定さγしている。本発明の
動作の散点を次に説明すると、アンプA6 r A?の
銅塩しきい値電圧”THI+が参照電圧VR,付近にめ
す、模擬アン7°A6の出力0・の電位が参照電圧vR
6ともの間にるる場合は、比較回路Ba 、 Bsの出
力毎号0.。、011は共に低電位でめり、このときの
制御1百号、VC、の電位が保持さjLる。VTHLが
高′電位側に変動して出力信号0゜の電位か骸照電圧v
R7より高電位になった場合は、比較回路B、の出力信
号O1Iが爾電位になり、その粕来制御匍勿■cが低電
位側にシフトする。
Each circuit consists of a B111 control number generation circuit G, and the lock function is the same as that of the second embodiment of the present invention.
The difference is that it is set to HLVc. Also, the reference voltage VR input to the comparator circuit B4 is VR5-△
rL is set to vR, and the reference voltage V input to the comparison circuit B6
R, is set to vRIs+muVR. The operation of the present invention will now be explained as follows: Amplifier A6 r A? The copper salt threshold voltage "THI+" is the reference voltage VR, and the potential of the output 0 of the simulated antenna 7°A6 is the reference voltage VR.
6, the outputs of the comparator circuits Ba and Bs each have a value of 0.6. . , 011 are both turned off at a low potential, and the potential of control No. 100, VC, at this time is held. VTHL fluctuates to the high potential side and the output signal 0° potential or skeleton voltage V
When the potential becomes higher than R7, the output signal O1I of the comparator circuit B becomes the next potential, and the output control signal O1I shifts to the lower potential side.

17こ、VTHLが低電位側に変動し1出力色号O,の
′電位か会照奄圧VR6よV低電位になった場合は、比
d19回路B4の出力信号01oが尚電位になり、その
紬釆ft+lJ餌侶号VO1が尚電位側にシフトする。
17. When VTHL changes to the low potential side and the potential of the 1st output color number O, becomes a V lower potential than the reference pressure VR6, the output signal 01o of the ratio d19 circuit B4 still becomes the potential, The Tsumugi ft+lJ bait number VO1 shifts to the potential side.

以上の動作りこより、本アンプAO及び模擬アンプA6
の論理しきい値電圧VTHLが変動し1模擬アングA6
の出力信号0.かVR5±△VRの電圧領域金外tしる
と、制御信号Vc、の電位がシフトしてVTHIJが制
御さtし、出力信号0.が常にvR,±ΔVRの電圧領
域に入るように制御される。
From the above operation, the main amplifier AO and the simulated amplifier A6
The logic threshold voltage VTHL of 1 simulated A6 changes.
The output signal of 0. When the voltage is outside the voltage range of VR5±△VR, the potential of the control signal Vc is shifted and VTHIJ is controlled, and the output signal 0. is controlled so that it always falls within the voltage range of vR, ±ΔVR.

第6図は本発明の第4の実施例を示すものでるり、模擬
アンプAs、 A@と比較回路B6.B?と制御信号発
生(9)路G4 HG5 、 G6と本アンプAOで構
成さrし、@擬アンフA8.A、、比較回路B61 B
q +制御1l141惧号発生回路G41 Gll 、
本アンプAOは本発明の第1の実施例と同じ機能會有し
、制御信号発生回路G6は抵抗g、、Rtと谷蓋C+ 
、 Ctで構成さIts抵抗R1と容量C8の第1の端
子に制御信号vC,h人力し、抵抗R8と谷蓋C1の第
1の端子に制御信号v。、 k人力し、抵抗R,,R,
と容量: C+ 、Ctの第2の端子?互いに接続して
制御信号VC,’に出力する。各ブロック間の接続関係
を明らかにすると、模擬アンプAgは参照電圧vRsと
制御信号Vc。
FIG. 6 shows a fourth embodiment of the present invention, which includes simulated amplifiers As, A@ and comparison circuit B6. B? and control signal generation (9) path G4, HG5, G6, and the main amplifier AO, @pseudo amplifier A8. A. Comparison circuit B61 B
q + control 1l 141 alarm signal generation circuit G41 Gll,
The present amplifier AO has the same functions as the first embodiment of the present invention, and the control signal generating circuit G6 includes resistors g, , Rt and a cap C+.
, Ct, whose control signal vC,h is applied to the first terminal of the resistor R1 and the capacitor C8, and the control signal v is applied to the first terminal of the resistor R8 and the capacitor C1. , k manpower, resistance R,,R,
and capacitance: C+, second terminal of Ct? They are connected to each other and output as control signals VC,'. Clarifying the connection relationship between each block, the simulation amplifier Ag has a reference voltage vRs and a control signal Vc.

音入力して出力信号0□會出力し、比較回路B6は出力
信号0□と参照電圧vR1゜音入力して出力信号0+t
sk出力し、制御信号発生回路G+kま出力信号O1,
?人力して制御信号VC4を発生し、模擬アンプA、は
参照電圧vR,と制御信号V。、を入力して出力信号0
1.ケ出力し、比較回路Bフは出力18号014と参照
電圧VR,ok人力して出力信号016會出力し、制御
信号発生回路G、は出力信号0+sを人力して制御信号
■C,ン発生し、制御信号発生回路G6は制御信号、V
(34とVC,k人力して制御信号Vc、 ?!−発生
し、本アンプA。は人力信号I4と制御信号v(、、i
入力し1出力色gO+t ’c出力している。ここで、
径照寛圧■、葡入力侶号ムのハイレベルの電位に設定し
、参・照電圧vR9七人・力値−1+I4の口′ワレベ
ルの電位に設定する。
The comparison circuit B6 receives the output signal 0□ and the reference voltage vR1° and outputs the output signal 0+t.
sk output and control signal generation circuit G+k output signal O1,
? The control signal VC4 is generated manually, and the simulated amplifier A has a reference voltage vR and a control signal V. , and output signal 0
1. The comparator circuit B outputs an output signal 016 by manually inputting the output No. 18 014 and the reference voltage VR, OK, and the control signal generating circuit G generates a control signal ■ C, by manually inputting the output signal 0+s. However, the control signal generation circuit G6 generates the control signal, V
(34 and VC, k are manually generated and the control signal Vc, ?!- is generated, and this amplifier A. is the human input signal I4 and the control signal v (,, i
It inputs and outputs one output color gO+t'c. here,
Set the reference voltage vR9 to the high level potential of the power value -1+I4.

次に本実施例の動作の説明7行うと、アンプ^、比軟回
路B6.制御18′@発生回路G4で構成さ扛る回路部
分及びA@ 、 B? 、 G6″″C構成さtLる回
路部分は本発明第1の実施例で説明した動作と同じ動作
全行い、したがっで制御信号V。、の電位はアンプんの
論理しきい値電圧を番照電圧VB。
Next, a seventh explanation of the operation of this embodiment will be given.The amplifier ^, the soft circuit B6. Control 18'@ A circuit section consisting of the generating circuit G4 and A@, B? , G6''''C tL performs all the same operations as described in the first embodiment of the present invention, and therefore the control signal V. , the potential of the amplifier is the logic threshold voltage of the amplifier VB.

に設定する電位になり、制御信号■o、の11L位はア
ンプA9の論理しきい値電圧iVB、に設定する電位に
なる。そして、制御(1=i発生回路G6にょジ、制御
信号■c4と■cl+の中間の電圧Vc6が発生さ才1
.る。よって、本アンプA0の論理しさい値’!圧が、
入力(g+5Itのハイレベルとロウレベルの中間に設
定される。
The control signal 11L of the control signal ① becomes the potential set to the logical threshold voltage iVB of the amplifier A9. Then, the control (1=i generation circuit G6) generates a voltage Vc6 intermediate between the control signals c4 and ccl+.
.. Ru. Therefore, the logical value of this amplifier A0'! The pressure is
It is set between the high level and low level of the input (g+5It).

上記VC説明を付つ7こ、第lの実施例から第4の実施
例V(より′、本アンプ゛の論理しきい値電圧7” V
R、y VRs r vRclr (■R8+■Ro 
)/ 2K t@ t”等しくなるように制御さ1しる
7 with the above VC explanation, from the first embodiment to the fourth embodiment
R, y VRs r vRclr (■R8+■Ro
)/2K t@t” is controlled so that it is equal to 1.

参照電圧■、 、 VR,、顔、 、 (%8+VR9
)72葡本アンズの利得の大きい’f1m Ff ti
lt域に設定することにエリ、動作マージンが大さくて
かつ利得の大きいアンプが実現できる。またオリ化が人
さくできるので従米核数段必蒙7こったアンフ栴成り段
数ケ減らフことかでき、高速化、低泊賀竜力化がh」口
しとなる。
Reference voltage ■, , VR,, face, , (%8+VR9
) 72 Udemoto Anzu's large gain 'f1m Ff ti
By setting it in the lt region, it is possible to realize an amplifier with a large operating margin and a large gain. In addition, since it can be made more easily, it is possible to reduce the number of stages required for the U.S. nuclear system, which is required to be 7, and increase the speed and reduce the power of the enemy.

なお、上記第1乃主第4の実施例で用いた本アンプは、
フーベて1個の揚台?示したが、被数個の本アンフ勿並
列に設けることもできる。
The amplifier used in the first and fourth embodiments above is as follows:
Is it just one frying stand? Although shown, several main amplifiers can of course be provided in parallel.

第7図は本発明の本アンプ及び&擬アンプに用いる、論
理しさい1lkt−制御できるアンプの第1のm成例紮
示すものであり、ソースホロワ回路FとコンデンサC1
とpチャネルトランジスタQsとnチャネルトランジス
タQ4で桐成さfし、ソースホロワ回路Fはnナヤネル
トランジスタQ。
FIG. 7 shows a first example of a logical 1lkt-controllable amplifier used in the present amplifier and pseudo-amplifier of the present invention, and includes a source follower circuit F and a capacitor C1.
The source follower circuit F is composed of a p-channel transistor Qs and an n-channel transistor Q4, and the source follower circuit F is an n-channel transistor Q.

と司変抵抗素子として用いるnチャネルトランジスタQ
2で構成さtしている。
and an n-channel transistor Q used as a variable resistance element.
It is composed of 2.

接続関係紮以−トに明らかにすると、トランジスタQ、
のドレインとトランジスタQ3のソースに電源VDD 
會供和し、トランジスタQ1のケートと’6 Jt C
3の第1の端子に入力信号I葡人力し、トランジスタQ
!のケートに制御信号V(1−人力し、トランジスタQ
、のソースとトランジスタqのソースvL電utr、 
V8El h快粘し、トランジスタQ1リソースとトラ
ンジスタQ、のドレインとトランジスタQaとQ4のり
“−トと容置Csの第2の端子全接続してその接点の電
圧【信号vNとし、トランジスタQaとQ4のドレイン
を接続し1七の接点から出力信号Ok取出す。
If we clarify the connection relationship in detail, the transistor Q,
Power supply VDD is connected to the drain of transistor Q3 and the source of transistor Q3.
We have a meeting and the gate of transistor Q1 and '6 Jt C
3, the input signal I is applied to the first terminal of the transistor Q.
! The control signal V (1-manual power) is applied to the gate of the transistor Q.
, the source of transistor q and the source vL current utr,
V8El h, connect all the transistor Q1 resource, the drain of transistor Q, the transistor Qa and Q4 gate, and the second terminal of the container Cs, and the voltage at the contact point [signal vN, transistor Qa and Q4 Connect the drain of and take out the output signal OK from contact 17.

次にこの回路の動作の説明葡行う。ソースホロワ回路F
は、A:す得がほはlとなるアンプと考えらtL1人力
奄圧1t1 トランジスタQ1のしきいlll11a圧
より大きいめる電圧値たkj低亀電位にシフトさせた電
圧か信号局に現ゎtしる。このシフトtLは、”Ji抵
抗素子として用いらrt、るトランジスタQ2の抵抗値
によって決まる。すなわち、制#信号vcL:/)を圧
埴によつ1制御できる。制御gi号光が筒電位になると
トランジスタQ、の抵抗値か小さくなうで、シフト量が
増大し、制御信号■cが低電位になるとトランジスタ犠
の抵抗値が大きくなってシフト量が減少する。容置Cj
は、人力信号lの電圧変化r谷短カツフリングによって
信号VN vc伝える働@會して計り、トランジスタQ
+に弁1−ことによる伝播遅延を小6くし1いる。導′
wL性の異なるトランジスタQs、QaはいわゆるCM
USインバータ會構成している。人力信号Ik低電位側
にシフトした信号VN全入力しているので、入力情号工
から与ると、論理しきい値電圧が高電位側にシフトした
ことになる。
Next, we will explain the operation of this circuit. Source follower circuit F
A: Considering the amplifier where the result is 1, the voltage value that is greater than the threshold voltage of transistor Q1 is kj, and the voltage shifted to a low potential is present at the signal station. I'll do it. This shift tL is determined by the resistance value of the transistor Q2 used as a resistance element.In other words, the control signal vcL:/) can be controlled by pressure.The control signal gi is applied to the cylinder potential. Then, the resistance value of the transistor Q becomes smaller, so the shift amount increases, and when the control signal c becomes a low potential, the resistance value of the transistor becomes larger and the shift amount decreases.Capacitor Cj
The voltage change of the human input signal l is measured by the short cutoff r of the signal VN vc, and the transistor Q
The propagation delay due to the valve 1- is 6 times 1. Guidance
Transistors Qs and Qa with different wL properties are so-called CM
It is composed of the US Inverter Association. Since the signal VN, which is shifted to the low potential side of the human input signal Ik, is fully input, the logic threshold voltage is shifted to the high potential side when applied from the input information engineer.

このシフト量は、前述したように制5!4)信号Voで
制御でき、この制御信号Vcケ尚電圧にした時に、島電
位側への一理しきい値電圧のシフト量が増大する。
This shift amount can be controlled by the control signal Vo as described above, and when this control signal Vc is set to a lower voltage, the shift amount of the primary threshold voltage toward the island potential side increases.

第8図は、論理しきい11!全制御できるアンプの第2
の構成例葡示すものである。第1のS成例では、導電性
の異なるトランジスタQj、Q+のゲートに信号vNた
Ijk与えたが、第2の構成例では、信号VNhpチャ
イ・ルトランジスタQ7のゲートに人力し、人力(m号
I′?f:nチャネルトランジスタQ6のケートに入力
している。この樗収例では、16J1″7殉全入力佃号
エエυ低亀位側にシフトさせることVC工り、見力・け
上トランジスタQ。
Figure 8 shows the logical threshold 11! The second fully controllable amplifier
An example of the configuration is shown below. In the first S configuration example, the signal vN and Ijk were applied to the gates of the transistors Qj and Q+, which have different conductivities, but in the second configuration example, the signal VNhp was applied manually to the gate of the cell transistor Q7, and the signal (m No. I'?f: Inputs to the gate of n-channel transistor Q6. In this example, 16J1"7 full input is shifted to the lower position side. Upper transistor Q.

のしさい値電圧ケ市電位側にシフト延せたことになる。This means that the lower value voltage has been shifted to the lower potential side.

このトランジスタQ7のしきい値電圧ケ制−情号VQ 
VC工υ制御することにより、トランジスタQ+、Qs
で構成さrる本アンプの@埋しきい値電圧を変化させて
いる。
Threshold voltage control of this transistor Q7 - information VQ
By controlling VC power, transistors Q+, Qs
The threshold voltage of this amplifier is changed.

第9図は、餉埋しきい値音制御できるアンプ゛の第3の
構成例でろυ、トランジスタ(=h 、 Qsで構成し
たソースホロワ回路とy童CIIVこより発生させたイ
ロ号vBvnナヤネルトランジスタQ+tのケートに入
力し、トランジスタQo*Q+oで構成したソースホロ
ワ回路と各賞C6により発生させた信号掩増pチャネル
トランジスタQ++のゲートに入力する構成になってい
る。この構成は、トランジスタQ+tとQoのしきい値
電圧のシフトm全それ七fL制御信号v、 、 vc′
により、個別に制御子6Cとができる。
Fig. 9 shows a third configuration example of an amplifier capable of controlling buried threshold sound. The input signal is input to the gate of the transistor Qo*Q+o, and the signal generated by the source follower circuit composed of the transistors Qo*Q+o and the gate of the p-channel transistor Q++ is inputted to the gate of the p-channel transistor Q++. The shift of the threshold voltage m is the total seven fL control signals v, , vc'
As a result, the controller 6C can be made individually.

第10図は論理しさい値を制御できるアンプのwJ4の
構成例でめジ、第3の構成例で用いた2つのソースホロ
ワ回路の一方紮pチャネルトランジスタQI6 r Q
+aで構成し厘ものでるる。第4の構成例と同様に、制
婢侶号■C2vC′により、nナヤネルトランジスタQ
+aとpチャ不ルトランジ、スタQl?のしきい1@に
個別に制御th41:fることができる。
Figure 10 shows an example of the configuration of an amplifier wJ4 that can control logical values, and one of the two source follower circuits used in the third configuration example is a p-channel transistor QI6 r Q.
It is composed of +a and comes out. Similarly to the fourth configuration example, the n Nayanel transistor Q is
+a and pcha not transition, star Ql? The threshold 1@ can be individually controlled th41:f.

なお、上記第1〜第4の構成?llは、pチャネルとn
ナヤネルトランジスタケ互いに入n賛え、VSSt制電
圧VDDを低電圧にし王も用いるこ、とができる。
In addition, the above-mentioned first to fourth configurations? ll is p channel and n
Nayanel transistors can be used together to reduce the VSSt control voltage VDD to a low voltage.

また、容量Cs* C:41 C111Ce+ Cr 
r Cs’に取り除いても、第1〜第4の構成汐りを動
作させることができる。
Also, capacity Cs* C:41 C111Ce+ Cr
Even if it is removed to r Cs', the first to fourth configuration waves can be operated.

第11図は本発明の実施例で用いる制御信号発生回路の
一構成例であり、pナヤ不ルトランジスタQ1.のソー
スと容置C8の第lの端子にtmvDD i供給し、n
チャ不ルト2ンジスタQtoのソースと容置C1(+の
第2の端子にX源VSS金供姶し、トランジスタQ1゜
のドレインとQtoのト。
FIG. 11 shows an example of the configuration of a control signal generation circuit used in an embodiment of the present invention, in which p-naya transistor Q1. tmvDDi is supplied to the source and the lth terminal of the container C8, and n
The source of the transistor Qto and the second terminal of the capacitor C1 (+) are supplied with the X source VSS, and the drain of the transistor Q1 and the capacitor C1 are connected to the drain of the transistor Qto.

レインとC,の第2の端子とC1jlの第1の端子を燵
絖してその接点から出力16号を取り出し、人力信号S
+?rインバータに人力してその出力’にトランジスタ
Q+oのゲートに人力し、人力信号82をトランジスタ
Qzoのケートに入カラーる構成になっている。この回
路の動作の説明會以下に行うと、人力1g号S1と人力
信号S2が共に低電位の場合、トランジスタQ、。y 
Qtoが共にカットオフでるり、ヤのときの出力信号0
0′−位が保持される1、人力信号S、が尚電位に7.
(′)た場合は、トランジスタQ+oがオンになって出
力信号の寛仁が面電位u(11にシフトし、人力信号S
2か尚電位になった場合はトランジスタQxoがオンに
なって出力信号Oの電位が低電位側にシフトする。本発
明の実施例では入力信′@S、と人力信号S2が共に高
電位YCなることがないので、その場合については考え
る心安がない。この回路は、本発明の実施例のG2.G
3の制御侶号兄生(ロ)路に適用できる。
Connect the second terminal of Rain and C, and the first terminal of C1jl, take out output No. 16 from the contact point, and output the human power signal S.
+? The configuration is such that a human input signal 82 is input to the gate of the transistor Qzo by inputting an input signal to the r inverter and inputting the output ' to the gate of the transistor Q+o. The operation of this circuit will be explained below.When both the human power signal 1g S1 and the human power signal S2 are at low potential, the transistor Q. y
Output signal 0 when Qto is both cutoff
1. The 0'-position is held; 1. The human input signal S is still at potential; 7.
('), the transistor Q+o turns on, the output signal Hirohito shifts to the surface potential u(11), and the human input signal S
If the potential is still lower than 2, the transistor Qxo is turned on and the potential of the output signal O is shifted to the lower potential side. In the embodiment of the present invention, both the input signal '@S and the human input signal S2 do not have a high potential YC, so there is no need to worry about such a case. This circuit is G2. of the embodiment of the present invention. G
It can be applied to the control section 3.

第12図は、銅塊しきい値を制御する回路の−猶成例で
め9、′a匁制御回路M1.電源制御回路NbトCM 
OSインバー20Mで構成さrし、゛電源制御回路M、
は、制御信号d、により1JL源VDD k Vn。
FIG. 12 shows an example of a circuit for controlling the copper lump threshold value. Power supply control circuit Nb CM
Consists of OS inverter 20M, ``power supply control circuit M,
is the 1JL source VDD k Vn by the control signal d.

に変換してCMOSインバーj1cMK供給し、電源制
御回路M2は、制御16号d2に=ジ寛= VSStv
s几に変換してCIVl OSインバー20Mに供給し
ている。この構成例の動作を簡単に説明すると、制御侶
gd+ 、4¥i” 高電位側にシフトさせて、VDI
)とVS’S k を寛仁側にシフトさせると、七nに
伴なってCMUSインバーjICMの@埋しきい値電圧
が低電位側にシフトし、逆に制御(i号d+ 、dtk
低亀位電位シフトさせると、CMOSインバータCMの
論理しきい値電圧が高電位側にシフトする。この一連の
動作により、嗣理しきい値電圧上制御することができる
The power supply control circuit M2 converts it into CMOS inverter j1cMK and supplies it to control No. 16 d2 = Jikan = VSStv
It is converted to S and supplied to CIVl OS Inver 20M. To briefly explain the operation of this configuration example, the controller gd+, 4\i'' is shifted to the high potential side, and the VDI
) and VS'S k to the Hirohito side, the CMUS invert jICM's @ buried threshold voltage shifts to the lower potential side with 7n, and conversely, the control (i No. d+, dtk
When the potential is shifted to a lower potential, the logic threshold voltage of the CMOS inverter CM is shifted to the higher potential side. Through this series of operations, it is possible to control the current threshold voltage.

な2、上記構成例の電源制御回路Ml2M!のうちどち
らか一方紫省略することもできる。
2. The power supply control circuit Ml2M of the above configuration example! You can also omit one of them (purple).

(発明の効果) 以上説明してきたように、本発明によ才りは、アンプの
論理しきい値電圧が常に入力信号のノ・イレベルとロワ
レベルの中間に設足した参照電圧付近VCなるように自
動的に制御することができる。したかつて、常に利得の
大きな動作点でアンプを動作させることができ、オII
得が大きくてかつDIJJ作マーシマージンいアンプが
実現できる。本発明の回路をたとえばECL人カイカイ
ンタフェイス)路に適用すると、従来は、MO8レベル
まで増幅するのに最低2段の増幅回路が必要でめったの
’(11−1段に減らすことができ、低消費電力で尚速
7il(CLインタフェイス回路が実現できる。
(Effects of the Invention) As explained above, the advantage of the present invention is that the logic threshold voltage of the amplifier is always near the reference voltage VC set between the input signal's noise level and lower level. Can be controlled automatically. In the past, it was possible to always operate the amplifier at a large gain operating point, and
It is possible to realize an amplifier with a large gain and a good margin made by DIJJ. When the circuit of the present invention is applied to, for example, an ECL interface, amplification circuits of at least two stages are required to amplify up to the MO8 level, which can rarely be reduced to 11-1 stages. A fast 7il (CL interface circuit) can be realized with low power consumption.

本発明の回路は、h:cL、TTLインタ7エイス回路
に適用できる他に、スタティックメモリ等のメモリセル
の読出し信号ヶ増幅するセンスアンプにも適用すること
ができる。
The circuit of the present invention can be applied not only to h:cL and TTL inter 7/8 circuits, but also to sense amplifiers that amplify read signals of memory cells such as static memories.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の増幅回路の一例、第2図は従来の増幅回
路の伝達特性、第3図は本発明の第1の実施例、第4図
乃至第6図は本@明の他の実施例、第7図は論理しきい
値全制御できるアンプの第1+7)構成例、第8図乃至
第10図は他の構成例、第11図は制御信号発生回路の
一構成例、第12図は論理しきい1に全制御する構成例
を示す。 VDD 、 vss・・・・・・・・・・・・・・・・
・・・・・電源Q1〜蟻、・・・・・・・・・・・・・
・・・・・・・・・・・MOSトランジスタI 、 I
、〜I4・・・・・・・・・・・・・・・・・・・・・
入力信号0.01〜06.・・・・・・・・・・・・・
・・・・・・・・出力信号vR,、VR,。・・・・・
・・・・・・・・・・・・・・・・参照電圧A0   
 ・・・・・・・・・・・・・・・・・・・・・・・・
本アンプAH、A3 、 A4 HA6 HA8HAg
・・・模擬アンプB、〜B7  ・・・・・・・・・・
・・・・・・・・・・・・・・比較回路61〜G6  
・・・・・・・・・・・・・・・・・・・・・・・・制
御信号発生回路R+ 、&  ・・・・・・・・・・・
・・・・・・・・・・・・・抵抗C3〜CIG・・・・
・・・・・・・・・・・・・・・・・・・・容量VC+
 VC+ VC+〜Va、・・・・・・・・・制御信号
F   ・・・・・・・・・・・・・・・・・・・・・
・・・ソースホロワ回路vN・・・・・・・・・・・・
・・・・・・・・・・・・16号b++82  ・・・
・・・・・・・・・・・・、・・・・・・・・・入力信
号M+ 、 Mt  ・・・・・・・・・・・・・・・
・・・・・・・・・電源制御回路d、、d、  ・・・
・・・・・・・・・・・・・・・・・・・・・制御信号
CM   ・・・・・・・・・・・・・・・・・・・・
・・・・CMOSインバータ第7E!!J 第9図 第10図 為− 〕20 ! ss 第12図 DD r         1 dl−+−IQ211 ■ L         J 「     1 一圧層 022r へプフイ菖!          I 231 1 Vss’ 1 :C9 :C10 Mt CM Aさjフイb! 、−M2
Fig. 1 is an example of a conventional amplifier circuit, Fig. 2 is a transfer characteristic of a conventional amplifier circuit, Fig. 3 is a first embodiment of the present invention, and Figs. Example, FIG. 7 shows an example of the 1+7 configuration of an amplifier that can fully control the logic threshold, FIGS. 8 to 10 show other configuration examples, FIG. 11 shows an example of the configuration of a control signal generation circuit, The figure shows an example of a configuration in which all control is performed at logical threshold 1. VDD, vss・・・・・・・・・・・・・・・
...Power supply Q1 ~ Ant, ......
・・・・・・・・・MOS transistor I, I
,~I4・・・・・・・・・・・・・・・・・・
Input signal 0.01~06.・・・・・・・・・・・・・・・
......Output signal vR,,VR,.・・・・・・
・・・・・・・・・・・・・・・Reference voltage A0
・・・・・・・・・・・・・・・・・・・・・・・・
This amplifier AH, A3, A4 HA6 HA8HAg
・・・Simulated amplifier B, ~B7 ・・・・・・・・・・・・
・・・・・・・・・・・Comparison circuit 61~G6
・・・・・・・・・・・・・・・・・・・・・Control signal generation circuit R+, & ・・・・・・・・・・・・・・・
・・・・・・・・・・・・Resistance C3~CIG・・・・
・・・・・・・・・・・・・・・・・・・・・Capacity VC+
VC+ VC+ ~ Va, ...... Control signal F ......
・・・Source follower circuit vN・・・・・・・・・・・・
・・・・・・・・・・・・16 b++82 ・・・
・・・・・・・・・・・・・・・・Input signal M+, Mt ・・・・・・・・・・・・・・・
......Power control circuit d,,d,...
・・・・・・・・・・・・・・・・・・・・・Control signal CM ・・・・・・・・・・・・・・・・・・・・・
...CMOS inverter No. 7E! ! J Figure 9 Figure 10 -] 20! ss Fig. 12 DD r 1 dl-+-IQ211 ■ L J `` 1 One-pressure layer 022r Hephui irises! I 231 1 Vss' 1 :C9 :C10 Mt CM A sajfib!, -M2

Claims (1)

【特許請求の範囲】 (1,1人力信号と論理しきい値電圧との大小関係荀識
別し、該識別の結果に対応してハイレベルおよびロウレ
ベルで表現される2値の信号勿出力する増幅回路に2い
て、前記人力信号が人力さjLる本アンプ、参照電圧が
入力さfLる模擬アンプ”及び該模擬アンプの出力電圧
ケ数側して制御価号會発生″j;b手段全具備し、該制
狗l信号によシ前記本アンフ及び模擬アンプの論理しき
い値電圧音制御することt%徴とする増幅回路。 (2)本アンプ及び模擬アンプとして、制御1g号によ
って制御芒ILる電源(ロ)路とCMOSインバータt
−x備し、CMOSインバータの%L@端子端子上記電
源回路の出力音供給する構成とした回路を用いること紮
特徴とする特Iff’開氷の範囲第1項自己載の増幅回
路。 (3)直列接続さIした互いIc異なる導電性葡持つl
こ2つの寛゛界効果トランジスタケ具物し、前記電界効
果トランジスタのケートに人力1百号ヶ与え、前記直列
接続の中点から出力信号を取り出す増幅回路に2いて、
制飾匍号により抵抗値かtlil(ホ)できる貝向抵抗
累すt用いてm成したソースホロワ回路、及び該ソース
ホロワ回路の入力端子と出力端子の間に接続したコンデ
ンサで構成した回路を少くとも1個以上+J加し、Mu
記ソースホロワ回路の入力端すに増幅回路への人力信号
を与え、前Beソースホロワ回路の出力端子から得られ
るイぎ号を、前記直列接続された少なくとも一力の電界
効果トランジスタのケートに惧胞するようにしたことを
特色とする特肝賄氷の範囲第1項記載のJvi幅回路。
[Claims] (1.1 Amplification that identifies the magnitude relationship between the human input signal and the logical threshold voltage, and outputs a binary signal expressed as a high level and a low level in accordance with the result of the discrimination. In the circuit, there is a main amplifier to which the human input signal is input by human input, a simulated amplifier to which the reference voltage is input, and a control value generator for generating the output voltage of the simulated amplifier. The amplifier circuit is configured to control the logical threshold voltage sound of the main amplifier and the simulated amplifier according to the control signal. IL power supply (b) path and CMOS inverter
Item 1. A self-mounted amplifier circuit characterized by using a circuit configured to supply the output sound of the power supply circuit to the %L@terminal of a CMOS inverter. (3) Having different conductive layers connected in series
Equipping these two field effect transistors, applying 100 degrees of human power to the gate of the field effect transistors, and applying two to an amplifier circuit that extracts an output signal from the midpoint of the series connection,
At least a circuit consisting of a source follower circuit formed using a resistor whose resistance value can be changed depending on the design number, and a capacitor connected between the input terminal and output terminal of the source follower circuit. 1 or more + J plus Mu
A human input signal to the amplifier circuit is applied to the input terminal of the source follower circuit, and the signal obtained from the output terminal of the source follower circuit is transmitted to the gate of the at least one field effect transistor connected in series. The JVI width circuit according to item 1, which is characterized by having the following features:
JP58022208A 1983-02-15 1983-02-15 Amplifier circuit Pending JPS59148431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58022208A JPS59148431A (en) 1983-02-15 1983-02-15 Amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58022208A JPS59148431A (en) 1983-02-15 1983-02-15 Amplifier circuit

Publications (1)

Publication Number Publication Date
JPS59148431A true JPS59148431A (en) 1984-08-25

Family

ID=12076372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58022208A Pending JPS59148431A (en) 1983-02-15 1983-02-15 Amplifier circuit

Country Status (1)

Country Link
JP (1) JPS59148431A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8212257B2 (en) 2001-08-10 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8212257B2 (en) 2001-08-10 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8586991B2 (en) 2001-08-10 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8841680B2 (en) 2001-08-10 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9343485B2 (en) 2001-08-10 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9601525B2 (en) 2001-08-10 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9893094B2 (en) 2001-08-10 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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