JPS59148065U - Ion implantation device - Google Patents
Ion implantation deviceInfo
- Publication number
- JPS59148065U JPS59148065U JP4210783U JP4210783U JPS59148065U JP S59148065 U JPS59148065 U JP S59148065U JP 4210783 U JP4210783 U JP 4210783U JP 4210783 U JP4210783 U JP 4210783U JP S59148065 U JPS59148065 U JP S59148065U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- disk
- wafer size
- scanning distance
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の実施例説明図、第２図は本考案の実施例
説明図である。
１・・・打込円板、２・・・ウェハー、３・・・イオン
ビーム、４・・・回転用モータ、５・・・走査用モータ
、６−・・・走査距離制御部、７・・・ウェハサイズ設
定機、８゜２３．２４・・・発光素子、９． １６．
１７・・・受光素子、１０・・・電気信号変換器、１１
． ２１． ２２・・・ＡＮＤゲート、１３．１４．１
５・・・孔、１８゜１９．２０・・・ウェハー設定様出
力。FIG. 1 is an explanatory diagram of a conventional embodiment, and FIG. 2 is an explanatory diagram of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Implanting disk, 2... Wafer, 3... Ion beam, 4... Rotation motor, 5... Scanning motor, 6-... Scanning distance control unit, 7. ...Wafer size setting machine, 8°23.24...Light emitting element, 9. 16.
17... Light receiving element, 10... Electric signal converter, 11
．． 21. 22...AND gate, 13.14.1
5... Hole, 18°19.20... Wafer setting output.
Claims (1)
タ、走査距離制御部、ウェハサイズ設定機を備えウェハ
サイズに応じてウェハサイズを設定することにより所定
の走査距離を往復して均一打込をするイオン打込装置に
おいて、ウェハサイズにより異なる打込円板に異なる位
置に孔をあけ円板の孔を通して発光素子、受光素子を配
置し、この孔を通して発光、受光が行なわれることによ
り所定のサイズのウェハ円板が装着されていることの信
号とウェハサイズ設定機の信号との一致条件により走査
距離制御部にウェハサイズに応じた走査距離設定信号を
与えることを特徴としたイオン打込装置。It is equipped with a driving disk for mounting the wafer, a motor for rotating and scanning the driving disk, a scanning distance control unit, and a wafer size setting machine, and by setting the wafer size according to the wafer size, uniform driving is performed by reciprocating a predetermined scanning distance. In the ion implantation equipment used for implantation, holes are made at different positions in the implantation disk depending on the wafer size, and a light emitting element and a light receiving element are placed through the hole in the disk. An ion implantation device characterized in that a scanning distance setting signal according to the wafer size is given to a scanning distance control section based on a condition that a signal indicating that a wafer disk of size is mounted matches a signal from a wafer size setting machine. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4210783U JPS59148065U (en) | 1983-03-25 | 1983-03-25 | Ion implantation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4210783U JPS59148065U (en) | 1983-03-25 | 1983-03-25 | Ion implantation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59148065U true JPS59148065U (en) | 1984-10-03 |
Family
ID=30172667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4210783U Pending JPS59148065U (en) | 1983-03-25 | 1983-03-25 | Ion implantation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59148065U (en) |
-
1983
- 1983-03-25 JP JP4210783U patent/JPS59148065U/en active Pending
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