JPS59121194A - Crystal for bubble device - Google Patents
Crystal for bubble deviceInfo
- Publication number
- JPS59121194A JPS59121194A JP23482882A JP23482882A JPS59121194A JP S59121194 A JPS59121194 A JP S59121194A JP 23482882 A JP23482882 A JP 23482882A JP 23482882 A JP23482882 A JP 23482882A JP S59121194 A JPS59121194 A JP S59121194A
- Authority
- JP
- Japan
- Prior art keywords
- bubble
- crystal
- bubble device
- garnet crystal
- garnet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
発明の技術分野
本発明は、径１μｍ前後のバブル用のガーネットバブル
デバイス結晶に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a garnet bubble device crystal for bubbles having a diameter of approximately 1 μm.
従来技術と問題点
磁気バブルは当初の径５〜６μｍ力ら最近では径１μｍ
程度と微小化が図られ、バブルメモリの大−容量化など
が図られている。しかしながら従来の１μバブル用のガ
ーネット結晶ではｑが３．３以下であり、ｑがこれより
小であるとバブルが自然に発生するニュークリエーショ
ンの現象があり、ｑをもっと上げる必要がある。ｑ（ｑ
ｕａｌｔｔ５） ｆａｃｔｏｒ）はＱ −Ｋ ｕ ／
２ ｙｒ Ｍ ｓ ＝ ＨＫ／ ４ ｆｃ Ｍ ｓで表
わされ、飽和磁化４πＭ Ｓ 、異方性磁界ＨＫ、磁気
異方性定数Ｋｕと関連する当該材料固有の値で、３μバ
ブル用結晶では５．０程度あるが、１．９μバブル用結
晶では４．３．１μバブルでは３．０などと下ってしま
うのが実情である。Conventional technology and problems Magnetic bubbles originally had a diameter of 5 to 6 μm, but recently have a diameter of 1 μm.
Efforts are being made to reduce the size and size of bubble memories, and to increase the capacity of bubble memories. However, in the conventional garnet crystal for 1 μ bubbles, q is 3.3 or less, and if q is smaller than this, there is a phenomenon of nucleation in which bubbles are naturally generated, so it is necessary to increase q. q(q
ualtt5) factor) is Q − K u /
It is expressed as 2 yr M s = HK/ 4 fc M s, and is a value specific to the material related to the saturation magnetization 4πM s , anisotropic magnetic field HK, and magnetic anisotropy constant Ku, and is 5. Although it is about 0, the reality is that for a crystal for a 1.9μ bubble, the value drops to 3.0 for a 4.3.1μ bubble.
発明の目的
それ数本発明の目的は、構成元素を選択してｑの大きい
１μバブル用ガーネツト結晶を提供するにある。OBJECTS OF THE INVENTION An object of the present invention is to provide a garnet crystal for a 1 μ bubble with a large q by selecting constituent elements.
発明の構成
本発明は・バブルデバイス用ガーネント結晶において、
その組成がＳｍｙ Ｙｂｚ Ｃａｕ Ｇｅｕ Ｐｅ＋
−ｕ Ｏ。Structure of the Invention The present invention relates to a garnent crystal for a bubble device,
Its composition is Smy Ybz Cau Geu Pe+
-u O.
こ＼で０．５５＜ ｙ ＜０．６５．１．’８０＜ Ｚ
≦１．９０． ０．５≦Ｕ≦０．６．ｙ＋ｚ、−＋−ｕ
＝３で与えられることを特徴とするが、次にこれを詳細
に説明する。Here, 0.55< y <0.65.1. '80＜Z
≦1.90. 0.5≦U≦0.6. y+z, -+-u
=3, which will be explained in detail next.
発明の実施例
微小バブル用結晶にはＹｏ、９１ Ｓ ｍＯ，４９Ｌ
ｕＯ，９８Ｃａｏ、６２Ｇ ｅｏ、ｓ２Ｆ １３４．３
８０１２なる組成のものかあるが、これは前述のように
ｑが３．３以下である。Embodiment of the invention Crystals for microbubbles include Yo, 91S mO, 49L
uO, 98Cao, 62G eo, s2F 134.3
There is also a composition called 8012, which has a q of 3.3 or less as mentioned above.
前式から明らかなようにｑを大にするにはＫｕを大にす
るのが有効で、これはイツトリウム（Ｙ）の減少、サマ
リウム（Ｓｍ）の増加などにより達成できる。そこで本
発明ではイツトリウム（Ｙ）を除き、サマリウム（Ｓｍ
）を増加した。しかしサマリウムは格子定数が大きいの
で、ＧＧＧ基板との格子定数合せができなくなる。イ、
７テルビウム（Ｙｂ）を加えたのはこの格子ミスマツチ
を調整するためである。上記従来例の結晶におけるルテ
チウム（Ｌｕ）も格子ミスマツチ調整用であるが、これ
を加えるとＫｕが減少し、磁歪定数〔λ１□１〕が小に
なる。イツトリウムを加えるとＫｕ減少はあるが、〔λ
１１１）が大になる。なおサマリウムを増やすと）（ｕ
増加と共に〔λ１１１〕 も大になる。次に実施例を挙
げる。表１は育成した結晶のメルト組成を、表２にその
特性を示す。表１の５ＹＣＩ〜５ＹＣ４は試料１〜４を
示し、表２のＴｇは育成温度、Ｖｇは育成速度、ｈは膜
厚、ＳＷは磁区幅、Ｈｏはバブル消減磁界、ｌは特性長
、σＷは磁壁エネルギ、Ａは変換定数、Δａは格子ミス
マツチ量を示す。実測とあるのは表１の眸料を作成して
実測した結果を示し、計算とは実測結果から実測試料周
辺の組成の仮想試料Ｃ３Ｙ１〜４の特性を計算式により
求めたものである。As is clear from the above equation, it is effective to increase Ku in order to increase q, and this can be achieved by decreasing yttrium (Y) and increasing samarium (Sm). Therefore, in the present invention, yttrium (Y) is excluded, samarium (Sm
) was increased. However, since samarium has a large lattice constant, it becomes impossible to match the lattice constant with the GGG substrate. stomach,
7 Terbium (Yb) was added to adjust this lattice mismatch. Lutetium (Lu) in the conventional crystal described above is also used to adjust lattice mismatch, but when added, Ku decreases and the magnetostriction constant [λ1□1] becomes small. Although Ku decreases when yttrium is added, [λ
111) becomes large. In addition, if you increase samarium) (u
As it increases, [λ111] also increases. Next, examples will be given. Table 1 shows the melt composition of the grown crystal, and Table 2 shows its properties. 5YCI to 5YC4 in Table 1 indicate Samples 1 to 4, Tg in Table 2 is the growth temperature, Vg is the growth rate, h is the film thickness, SW is the magnetic domain width, Ho is the bubble extinction magnetic field, l is the characteristic length, and σW is Domain wall energy, A is a conversion constant, and Δa is the amount of lattice mismatch. "Actually measured" indicates the results of actual measurements made by preparing the materials in Table 1, and "calculated" indicates the properties of the virtual samples C3Y1 to C3Y4 having compositions around the actually measured samples, which were obtained from the actually measured results using calculation formulas.
特性長ｌとバブル径ｄとの間にはｄ＃（７〜１０）ρの
関係があり、１μバブル用結晶なら特性長はそれより１
指手さい０．１μ程度でなければならない。表１の５Ｙ
ＣＩ〜５ＹＣ３は４πＭｓが小さい（４πＭｓは７００
以上が望まれる）のでβが大きく、１μｍバブルの制限
値０．１３μｍを越えてしまうので失格であった。ｌが
小さいのが５ＹＣ４であり、この結晶のｌは０．１１４
なので０．８〜１．０μｍバブルを保持できる。しかも
ｑは４．７でバブル自然発生を阻止できる。この試料５
ＹＣ４のｙ、ｚ、ｕは０．６１．１．８６．０．５３で
あり、ｙを０．５５〜０．６５． ｚを１．９５〜１
．８０． ｕを０．５０〜０．６の範囲で変えてもｑは
４．０． ４．９．４．９． ４．８となり、制限値３
．３を越えることが確められた。There is a relationship of d#(7~10)ρ between the characteristic length l and the bubble diameter d, and for a crystal for a 1μ bubble, the characteristic length is 1
The finger size must be about 0.1μ. 5Y in Table 1
CI~5YC3 has a small 4πMs (4πMs is 700
Therefore, β was large and exceeded the limit value of 0.13 μm for a 1 μm bubble, so it was disqualified. 5YC4 has a small l value, and the l value of this crystal is 0.114.
Therefore, bubbles of 0.8 to 1.0 μm can be held. Moreover, q is 4.7, which can prevent the spontaneous generation of bubbles. This sample 5
Y, z, and u of YC4 are 0.61.1.86.0.53, and y is 0.55 to 0.65. z from 1.95 to 1
．． 80. Even if u is changed in the range of 0.50 to 0.6, q is 4.0. 4.9.4.9. 4.8, the limit value is 3
．． It was confirmed that the number exceeds 3.
発明の効果
以上説明したように本発明によれば、ｑを増加し、デバ
イス動作時のバブル自然発生に基ずく誤動作を減少でき
る１μｍバブル用ガーネット結晶を提供できる。Effects of the Invention As explained above, according to the present invention, it is possible to provide a 1 μm bubble garnet crystal which can increase q and reduce malfunctions due to spontaneous bubble generation during device operation.
出願人 富士通株式会社 代理人弁理士 青 柳 稔Applicant: Fujitsu Limited Representative Patent Attorney Minoru Ao Yanagi
Claims (1)
Ｓｍｙ Ｙｂｚ Ｃａｕ Ｇｅｕ Ｆｅｅ −ｕ Ｏ，
□、こ＼で０： ５５ ＜ ｙ≦０．６５．１．８０≦
Ｚ≦１．９０． ０．５≦Ｕ≦０゜５、ｙ＋ｚ＋ｕ＝３
で与えら−れることを特徴とするバブルデバイス用結晶
。In the garnent crystal for bubble devices, its composition is Smy Ybz Cau Geu Fee -u O,
□, this\0: 55 < y≦0.65.1.80≦
Z≦1.90. 0.5≦U≦0゜5, y+z+u=3
A crystal for a bubble device, characterized in that it is given by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23482882A JPS59121194A (en) | 1982-12-27 | 1982-12-27 | Crystal for bubble device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23482882A JPS59121194A (en) | 1982-12-27 | 1982-12-27 | Crystal for bubble device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59121194A true JPS59121194A (en) | 1984-07-13 |
Family
ID=16977014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23482882A Pending JPS59121194A (en) | 1982-12-27 | 1982-12-27 | Crystal for bubble device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59121194A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03104104A (en) * | 1989-09-18 | 1991-05-01 | Shin Etsu Chem Co Ltd | Magnetic garnet material |
-
1982
- 1982-12-27 JP JP23482882A patent/JPS59121194A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03104104A (en) * | 1989-09-18 | 1991-05-01 | Shin Etsu Chem Co Ltd | Magnetic garnet material |
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