JPS59120034A - Illumination culturing method - Google Patents

Illumination culturing method

Info

Publication number
JPS59120034A
JPS59120034A JP22689982A JP22689982A JPS59120034A JP S59120034 A JPS59120034 A JP S59120034A JP 22689982 A JP22689982 A JP 22689982A JP 22689982 A JP22689982 A JP 22689982A JP S59120034 A JPS59120034 A JP S59120034A
Authority
JP
Japan
Prior art keywords
cultivation
illuminance
cultivation field
light
light sources
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22689982A
Other languages
Japanese (ja)
Inventor
実 小泉
新明 誠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Lighting Ltd
Original Assignee
Hitachi Lighting Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Lighting Ltd filed Critical Hitachi Lighting Ltd
Priority to JP22689982A priority Critical patent/JPS59120034A/en
Publication of JPS59120034A publication Critical patent/JPS59120034A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は高照度下において植物を成育させる電照栽培方
法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electric cultivation method for growing plants under high illuminance.

螢光灯などの比較的照度が低い人工光源の下で植物を栽
培する電照栽培は従来から行われていた71;、最近で
1d20000ルクス程度の高照度の下で電照栽培を行
うことが試みられている。このような高照度下の栽培で
は照射面の照度のむらがはなはだしく植物の成育を不均
一にし、また照明に要する費用が生産コスト中に占める
比率が高いため−できるだけ均一な所要の高照度を少い
灯数で得ることが望まれる。螢光灯による照明は比較的
均斉度−fよい照明効果が得られる妙f、光源1本当り
の光束数が少いため所要の高照度を得ることが難しく、
また所要の照度が得られたとしても非常に多数の光源を
必要とし、保守の費用が増大するなどの欠点≠2ある。
Light cultivation, in which plants are cultivated under relatively low-intensity artificial light sources such as fluorescent lights, has been practiced for some time71; however, recently it has become possible to grow plants under high illuminance of about 1d20,000 lux. is being attempted. In cultivation under such high illuminance, the illuminance on the irradiated surface is extremely uneven, making the growth of plants uneven, and the cost of lighting accounts for a high proportion of the production cost. It is desirable to obtain it by the number of lights. Illumination with fluorescent lamps provides a relatively uniform illumination effect, but because the number of luminous fluxes per light source is small, it is difficult to obtain the required high illuminance.
Further, even if the required illuminance is obtained, a very large number of light sources are required, which increases maintenance costs.

またメタルハライドランデや高圧ナトリウムランプなど
の高効率光源を等間隔に配置した場合には、各光源の配
光が相互に重なり合い相互反射も加わって、中央部の照
度≠;高(周辺部では照度が低下し均一な照度の栽培@
を得ることが難しく植物の成育が不均一になるという欠
点があった。
Furthermore, when high-efficiency light sources such as metal halide lamps and high-pressure sodium lamps are arranged at equal intervals, the light distribution of each light source overlaps with each other, and mutual reflection is added, resulting in illuminance in the center being ≠ high (in the periphery, illuminance is low). Cultivation with reduced and uniform illuminance @
The drawback was that it was difficult to obtain and the growth of the plants was uneven.

本発明はこれらの欠膚を除きできるだけ少い灯数で高照
度を得て該高照度下で栽培する植物の均一な成育を得る
ために一高効率光源を用い、栽培圃の周辺部分に向うに
した≠;つで上記光源を装着する照明器具相互の間隔を
縮めて配置し、かつ上記栽培圃の周囲には反射率が高い
垂れ幕を設けること(il−特徴とする。
The present invention eliminates these defects, obtains high illuminance with as few lights as possible, and achieves uniform growth of plants cultivated under the high illuminance by using a high-efficiency light source and directing it toward the periphery of the cultivation field. When ≠;, the lighting fixtures to which the light sources are installed are arranged with a reduced distance from each other, and a banner with high reflectance is provided around the cultivation field (il-characteristic).

つぎに本発明の実施例を図面とともに説明する。Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明による電照栽培方法における照明器具配
置の一実施例を示す図−第2図は上記電照栽培方法によ
る装置の正面図、第3図は電照栽培方法にふ・ける照明
器具配置の他の実施例を示す図−第4図は上記実施例の
栽培1表面に訃ける等照度曲線図である。第1図に示す
照明器具の配置例は横15..5m、縦IDmの長方形
の栽培1面3において一該栽@圃乙の表面から2mの高
さに照明器具を取付けて、栽培−3の表面の照度を均一
化するために上記栽培圃3の中央部から周辺部分に向う
にしたがって照明器具の取付間隔を縮めている。
Fig. 1 is a diagram showing an example of the arrangement of lighting equipment in the light cultivation method according to the present invention - Fig. 2 is a front view of the apparatus according to the light cultivation method described above, and Fig. 3 is a diagram showing an example of the lighting equipment arrangement in the light cultivation method according to the present invention. FIG. 4, which is a diagram showing another embodiment of the arrangement of lighting equipment, is an isoluminance curve diagram on the surface of the cultivation 1 of the above embodiment. An example of the arrangement of lighting equipment shown in Fig. 1 is horizontal 15. .. In the rectangular cultivation field 3 with a length of 5 m and a vertical ID m, a lighting fixture is installed at a height of 2 m from the surface of the cultivation field 3, and in order to equalize the illuminance on the surface of cultivation field 3. The distance between the lighting fixtures is reduced from the center to the periphery.

また上記栽培[聞3の周囲には第2図に示すように光源
の高さから栽培圃表面に届く高反射率の垂れ幕4を下げ
ている。照明器具として940Wの高圧す) IJウム
ランプ2を装着した特広照形の反射かさ1を用い一反射
率70%の垂れ幕4を設けた上記実施例の照明器具間隔
は、A=o、8m、B=2.2m−C=2.5m−D−
1,8m、E=2.4m−F=2.6m−()=3.2
mで、上記栽培圃全域にわたりほぼ一様な照度分布を得
た。上記のように照明器具を配置するときは一周辺部以
外ではそれぞれの照明器具から照射される光が相互に重
なり合って十分高い平均化された照度が得られ、栽培1
d3の周辺部に近づくにしたがい照明器具の#!y隔が
狭くなるため照射光の重なりが太き(なって照度を高め
るとともに、垂れ幕40反射によってさらに不足する照
度を補い一部い灯数でほぼ平均化されfc+甑照度が得
られる。したがって高照度下であっても栽培圃3に卦け
る植物の成育茫均−化させることができる。第3図は上
記実施例と同一規模の−a培1i1ffi 3において
%940Wの高圧ナトリウムランプ2金特広照形反射か
さ1に装着し一2mの高さに取付けた他の配置例であっ
て、照明器具の取付間隔H,H= 0.75 m、ニー
2.8m−J=5.2m、K=0.8m、L=18m=
 M=2.11mとし一栽培4’sの周囲に反射率が約
70%の垂れ44をめぐらせ−     ゛第4図に示
すような等照度曲線を栽培1刑30表面に得でいる。す
なわち上記栽培■3の辺縁のごく一部を除いてi 5o
ooルクスから20000ルタスの(1Mの極めて平均
化された電照(9)の照度分布が得ら?L、したがって
植物の成育≠2均一化される。
Further, around the cultivation field 3, as shown in FIG. 2, a highly reflective banner 4 is hung that reaches from the height of the light source to the cultivation field surface. The lighting equipment interval of the above example in which a special wide illumination type reflective umbrella 1 equipped with an IJum lamp 2 (with a high voltage of 940 W as a lighting equipment) and a banner 4 with a reflectance of 70% is installed is as follows: A = o, 8 m; B=2.2m-C=2.5m-D-
1.8m, E=2.4m-F=2.6m-()=3.2
m, a substantially uniform illuminance distribution was obtained over the entire area of the cultivation field. When arranging the lighting equipment as described above, the light emitted from each lighting equipment overlaps with each other except for one peripheral area, and a sufficiently high averaged illuminance is obtained.
# of lighting equipment as you get closer to the periphery of d3! Since the y interval becomes narrower, the overlap of the irradiated light becomes thicker (this increases the illumination intensity, and the insufficient illuminance is further compensated for by the reflection of the banner 40, which is almost averaged by the number of lights, resulting in fc + koshiki illuminance. Therefore, high illuminance is obtained. Even under illuminance, it is possible to uniformize the growth of plants in cultivation field 3. Figure 3 shows a high-pressure sodium lamp of % 940W in a -a culture 1i1ffi 3 of the same scale as in the above example. Another arrangement example in which the lighting equipment is attached to the wide-illuminated reflective umbrella 1 and installed at a height of 12 m, the installation interval of the lighting equipment H, H = 0.75 m, knee 2.8 m - J = 5.2 m, K=0.8m, L=18m=
M = 2.11 m, and a drop 44 with a reflectance of about 70% is placed around each cultivated plant 4'. An isoluminous curve as shown in Fig. 4 is obtained on the surface of each cultivated plant 4'. In other words, except for a small part of the periphery of cultivation ① above, i 5o
A highly averaged illuminance distribution (9) of 1 M is obtained from 00 lux to 20,000 lux, thus the plant growth≠2 is homogenized.

な〉上記栽培F用によ?いて垂れ幕4を設けない場合は
、場所により10000ルクスから20000ルクスC
て至る間の照度むら2生じた。
Is it for the cultivation F mentioned above? If the banner 4 is not installed, the temperature will vary from 10,000 lux to 20,000 lux C depending on the location.
There was some unevenness in illuminance during the time.

本発明は上記のように高効率光源を多数用いた高照度の
電照栽培方法において、高効率光源を装着した照明器具
の取付間隔を・栽培圃の周辺に向うGでしたがって縮め
て配置し周辺部の照度低下を補うとともに、高反射率の
垂れ−4を上記栽培圃の周[1iIvcめぐらし該栽培
圃の外f向けて照射される光全反射活用しさらに周辺部
の照度を畳めたため。
As described above, the present invention is a high-intensity electric cultivation method that uses a large number of high-efficiency light sources, in which the installation interval of the lighting fixtures equipped with high-efficiency light sources is shortened according to the direction of G toward the periphery of the cultivation field. In addition to compensating for the decrease in illuminance in the surrounding area, the high reflectance sag-4 was used around the cultivation field to utilize total internal reflection of the light irradiated towards the outside of the cultivation field, further reducing the illuminance in the peripheral area.

少いl!σ明器兵で上記栽培圃に均一化された高照度の
照明を行うことができる。したがって本発明によiよる
電照栽培方法では高照度下の栽培を行うにもかかわらす
一植物を均一に成育させること≠;できる。
Little l! The cultivation field can be uniformly illuminated with high illuminance using the σ light beam. Therefore, in the electric light cultivation method according to i according to the present invention, it is possible to uniformly grow one plant even though cultivation is performed under high illumination.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による電照栽培方法における照明器具配
置の一実施例を示す図、第2図は第1図に示す実施例の
正面図、第3図は本発明による照明器具配(麿の他の実
施例を示す因、第4図は上記実施例の栽培圃表面に卦け
る等照度曲線図である。 1・・・反射かさ。 2・・・高効率光源(高圧ナトリウムランフ°)。 3・・・栽培圃− 4・・・垂ノt7斧ト。 +11+−F → 第1図 弄  2 図 第 3  図 不 4 図
FIG. 1 is a diagram showing an embodiment of the lighting fixture arrangement in the electric cultivation method according to the present invention, FIG. 2 is a front view of the embodiment shown in FIG. 1, and FIG. Fig. 4 is an isoluminance curve diagram on the surface of the cultivation field of the above embodiment, showing another example. 1...Reflection umbrella. 2...High efficiency light source (high pressure sodium lamp). 3...Cultivation field-4...Top t7 axe.+11+-F → Figure 1 2 Figure 3 Not shown 4

Claims (1)

【特許請求の範囲】[Claims] 高効率光源を多数配置しれ高照度下の栽培圃で植物栽培
を行う電照栽培方法において、上記栽培圃の周辺部分に
向うにした廼fって高効率光源乞装着した照明器具相互
の間隔を縮めて配置し、かつ上記栽培1aの周囲には光
源の高さから栽培圃の表面に達する長さの反射率が高い
垂れ幕を設けて栽培圃の照度分布を均一化することを特
徴とする電照栽培方法。
In the electric cultivation method in which plants are cultivated in a cultivation field under high illuminance with a large number of high-efficiency light sources arranged, the distance between the lighting fixtures equipped with high-efficiency light sources is adjusted by increasing the distance toward the periphery of the cultivation field. The electric lamp is arranged in a shortened manner, and a banner with a high reflectance is provided around the cultivation field 1a with a length extending from the height of the light source to the surface of the cultivation field, thereby making the illuminance distribution of the cultivation field uniform. Light cultivation method.
JP22689982A 1982-12-27 1982-12-27 Illumination culturing method Pending JPS59120034A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22689982A JPS59120034A (en) 1982-12-27 1982-12-27 Illumination culturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22689982A JPS59120034A (en) 1982-12-27 1982-12-27 Illumination culturing method

Publications (1)

Publication Number Publication Date
JPS59120034A true JPS59120034A (en) 1984-07-11

Family

ID=16852330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22689982A Pending JPS59120034A (en) 1982-12-27 1982-12-27 Illumination culturing method

Country Status (1)

Country Link
JP (1) JPS59120034A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014027922A (en) * 2012-06-26 2014-02-13 Showa Denko Kk Plant cultivation apparatus
WO2017168667A1 (en) * 2016-03-31 2017-10-05 富士通株式会社 Illumination device for plant cultivation, plant cultivation device, plant cultivation method
JP2019115365A (en) * 2015-02-13 2019-07-18 伊東電機株式会社 Plant cultivation device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014027922A (en) * 2012-06-26 2014-02-13 Showa Denko Kk Plant cultivation apparatus
JP2019115365A (en) * 2015-02-13 2019-07-18 伊東電機株式会社 Plant cultivation device
WO2017168667A1 (en) * 2016-03-31 2017-10-05 富士通株式会社 Illumination device for plant cultivation, plant cultivation device, plant cultivation method

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