JPS59116364A - Control method of electroless copper plating bath - Google Patents

Control method of electroless copper plating bath

Info

Publication number
JPS59116364A
JPS59116364A JP22398482A JP22398482A JPS59116364A JP S59116364 A JPS59116364 A JP S59116364A JP 22398482 A JP22398482 A JP 22398482A JP 22398482 A JP22398482 A JP 22398482A JP S59116364 A JPS59116364 A JP S59116364A
Authority
JP
Japan
Prior art keywords
plating
ion
soln
electroless
concn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22398482A
Other languages
Japanese (ja)
Inventor
Yoshihito Kobayashi
嘉仁 小林
Suekichi Inomata
猪股 末吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP22398482A priority Critical patent/JPS59116364A/en
Publication of JPS59116364A publication Critical patent/JPS59116364A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1617Purification and regeneration of coating baths
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/187Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating means therefor, e.g. baths, apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemically Coating (AREA)

Abstract

PURPOSE:To enable the use of a replenishing soln. having a high concn. of Cu ion and to improve the quality of an electroless Cu plating film by heating the replenishing soln. of Cu ion consumed in an electrolyte during the operation of electroless Cu plating to a specific temp. thereby replenishing said ion. CONSTITUTION:A Cu plate of which the surface is preliminarily catalyzed by Pd, etc. is dipped in an electroless Cu plating soln. contg. copper sulfate as a Cu ion source, formaldehyde as a reducing agent for Cu ion and NaOH as a pH adjusting agent, whereby Cu is deposited on the surface by electroless plating. The concn. of the copper sulfate, formaldehyde and NaOH in the plating soln. decreases with progression of the plating reaction and are therefore replenished respectively. The aq. copper sulfate soln. in this case is heated to 70-90 deg.C and is replenished as the aq. soln. having the higher concn. of copper sulfate, whereby the concn. of the Cu ion in the plating soln. is easily maintained at the correct concn. and the electroless plating film having excellent quality is formed.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 この発明け、無匿屏鋼めっきの管理方法に関し、より詳
しくは消耗した無電解銅めっき浴の鋼イオンの浦充方法
に1ねする。
[Detailed Description of the Invention] [Technical Field to Which the Invention Pertains] The present invention relates to a method for managing non-screening steel plating, and more specifically to a method for recharging steel ions in a spent electroless copper plating bath.

〔従来技01″8とその問題点〕 無picfiW鋼めっきは、浴液中の主1母イオンを還
元剤により触媒活性な表面へ還元析出させる化学的プロ
セスであり、最近、プラスチックの金属化、プリント配
線拝に広く利用されている。このようなめっき浴におい
て、良好な性質を有するめっき皮膜を得るためには、め
っき浴の各成分の濃度、特に、主成分の濃度を當に適正
濃度範囲に維持する必要がある。
[Conventional technology 01''8 and its problems] PicfiW steel plating is a chemical process in which the main mother ion in the bath liquid is reduced and precipitated on the catalytically active surface using a reducing agent. It is widely used for printed wiring.In order to obtain a plating film with good properties in such a plating bath, the concentration of each component in the plating bath, especially the concentration of the main component, must be adjusted to an appropriate concentration range. need to be maintained.

無電解銅めっきにおける銅の析出に1次式(1)の反応
に縛づくものと考えられる。
It is thought that the reaction of linear equation (1) is responsible for the precipitation of copper in electroless copper plating.

Cu”+2HCHO+40H−+ CuO+Ht+2 Hz O+2 HC00−fl)こ
の反応は触媒反応であり、析出した銅自体が更にこの反
応の触媒として作用する。そのため、自動的に、析出銅
の上に更に銅がJej出して厚さが増加し、めっきが進
行する。
Cu"+2HCHO+40H-+ CuO+Ht+2 Hz O+2 HC00-fl) This reaction is a catalytic reaction, and the precipitated copper itself further acts as a catalyst for this reaction. Therefore, more copper is automatically deposited on top of the precipitated copper. The thickness increases and plating progresses.

無電解銅めっき法は、電気銅めっき法のような陽極溶解
による礪イオンの補充がないために、銅の析出により浴
中の銅イオン濃度か次第に減少する。又、(1)式から
明らかなように、ホルムアルテヒド、水酸化ナトリウム
の濃度も同様に減少する。
In the electroless copper plating method, unlike the electrolytic copper plating method, there is no replenishment of copper ions by anodic dissolution, so the copper ion concentration in the bath gradually decreases due to copper precipitation. Furthermore, as is clear from equation (1), the concentrations of formaldehyde and sodium hydroxide also decrease.

従って、化学鋼めっき液の主成分である。銅イオン、ホ
ルムアルデヒド、水酸化ナトリウムの濃度を常に通正濃
度化囲に維持するためにはこれらの3成分をめっき液中
に補光していく必要がある。
Therefore, it is the main component of chemical steel plating solutions. In order to always maintain the concentrations of copper ions, formaldehyde, and sodium hydroxide within the normal concentration range, it is necessary to supplement the light of these three components in the plating solution.

補充の方法としてはめっき液中の1回イオン、ホルムア
ルデヒド、水成化ナトリウム、の夫々のm1度を分析し
て、不足分を補充する訳であるが、補光液には夫々の成
分の濃厚浴液を用いるのが一般的である。濃厚浴液を使
用する理由は補充に伴って生じるめっき液量の増加を抑
制する必要があるからである。補充方法はめっき条件の
一つである。
The replenishment method is to analyze the m1 degree of each of the single ions, formaldehyde, and aqueous sodium in the plating solution and replenish the deficiencies. It is common to use a bath solution. The reason why a concentrated bath solution is used is that it is necessary to suppress an increase in the amount of plating solution that occurs due to replenishment. The replenishment method is one of the plating conditions.

めっき温度にも依存して変って来る。室温刊近でめっき
する場合にはめっき漕からの水分の蒸発が殆んど埠いた
め、抽充液喰とほぼ四賛のめっき液を汲みだした後に1
(ti光を行っている。このため高価なめっき液を廃棄
しなけれはならないという問題点がある。一方、高温(
一般には80°C以下)でめっきするliAには水分の
蒸発量が増加するため汲みだしh#は減少傾向となる。
It changes depending on the plating temperature. When plating at room temperature, most of the water evaporates from the plating tank, so after pumping out the plating solution,
(Ti light is used.Therefore, there is a problem that the expensive plating solution must be disposed of.On the other hand, high temperature (
In LiA, which is plated at a temperature (generally below 80°C), the amount of water evaporated increases, so the pumping h# tends to decrease.

しかし、めっき速度を早めるとやはり補充液量が蒸発量
を上廻り、めっき液の廃棄の必要が生じる。ところで、
銅塩として確用されている値酸銅に特に、指温でVま水
への溶解度か小さいため多量の水?めっき液中に持ち込
む。この様に補光により液量が増加する問題を解決する
ために例えば、特公昭53−6934号公報には銅塩を
にじめとする主成分を粉末又はスラリー状態で添加する
方法が提業されている。
However, when the plating speed is increased, the amount of replenisher still exceeds the amount of evaporation, making it necessary to discard the plating solution. by the way,
In particular, the value of acid copper, which is confirmed as a copper salt, is V at finger temperature.Is the solubility in water small? Bring it into the plating solution. In order to solve this problem of increasing the amount of liquid due to supplementary light, for example, Japanese Patent Publication No. 53-6934 proposes a method of adding copper salt as the main component in the form of powder or slurry. has been done.

しかしこの方法は粉末を扱うために補充操作が円滑に進
まず、且つ粉末で補光する除に局部的に高濃度の領域が
発生してしはしはめっき液が不安定となり分解する欠点
があった。
However, this method has the drawback that the replenishment operation does not proceed smoothly because powder is used, and even though the powder is used to supplement the light, locally high concentration areas occur, which can cause the plating solution to become unstable and decompose. there were.

〔発明の目的〕[Purpose of the invention]

本発明は上記した問題点を解決し、高速無電解銅めっき
浴への鋼イオン補光時に、液量の増加を抑制する銅イオ
ン補充方法の提供を目的とする。
An object of the present invention is to solve the above-mentioned problems and provide a copper ion replenishment method that suppresses an increase in the amount of liquid when supplementing steel ions to a high-speed electroless copper plating bath.

〔発明の概要〕[Summary of the invention]

本発明C1鋼イオン源、還元剤、錯化剤、及びPH調制
剤からなる無亀屏鋼めっき浴に痢イオンを補充する方法
において該補充液を70℃以上に加熱することにより、
補充液中の銅イオン嬢度を市くすることを特徴とするも
のである。
In the method of replenishing a tome-free steel plating bath comprising a C1 steel ion source, a reducing agent, a complexing agent, and a PH control agent with ion, by heating the replenishing solution to 70°C or higher,
It is characterized by reducing the concentration of copper ions in the replenisher.

本発明の銅イオン補充液においては、姉0塩としては従
来から使用して来たものを使用することができる。
In the copper ion replenisher of the present invention, conventionally used salts can be used as the 0-salt.

本発明にがかる補充液温度としては70℃以上90℃以
下の範囲、好ましくは、75℃以上、85℃以下の範囲
である。
The temperature of the replenisher according to the present invention is in the range of 70°C or more and 90°C or less, preferably 75°C or more and 85°C or less.

その別由1d70℃以下では銅塩の@屏度が低く、補充
によるめっき浴の液量増加を抑制する効果が少ないため
であり5また90°C以上でにめっき浴に補充した際、
局部的に加熱され、めっき浴が分解する々どの不都合が
生じるためである。
Another reason for this is that below 70°C, the concentration of the copper salt is low and there is little effect in suppressing the increase in liquid volume in the plating bath due to replenishment.
This is because local heating causes problems such as the plating bath decomposing.

本発明の桐イオン補充液を使用することにより、鋼イオ
ン補充液)4を著しく減少させ、高速無阻解銅めっき浴
の液1弁噌大を抑制することにより、コストを低下させ
、≠1つ廃液問題の解決に寄与するものである。
By using the paulownia ion replenisher of the present invention, the amount of steel ion replenisher (4) can be significantly reduced, and the amount of solution required for high-speed non-blocking copper plating bath can be reduced, thereby reducing costs. This contributes to solving the waste liquid problem.

〔発明の実施例〕[Embodiments of the invention]

実施例1 J’?E d l turnの・銅板を10%水]俊化
ナトリウム溶液に常温にて30秒間浸漬し、水洗後、引
き続き10%硝へ・夕に?+:温にて5秒間浸漬し水洗
して胴板表面を清浄にした。次に上記銅箔を、 塩化錫(JI)    50  g/i塩酸  1(J
m(171 水    残部 なる組成の浴液゛に2分間浸漬し、流水中で1分間水洗
した。次いで、 塩化パラジウム  0.25   Fl/1塩酸  1
0 rnl/1 水    残部 なる組成の液に1分間浸漬し、流水中で1分間水洗した
。しかるのちに、 硫酸@(5水相物)        0.03モルN、
N、N’、N −テトラキス−0,045モル(ユーヒ
ドロキシプロピル)エチレンジアミンバラホルムアルデ
ヒド      0.1  モル水酸化ナトリウム  
PIを12.3にする骨2.2′−ジピリジル    
 20  mfl/12−メルカプトベンゾチアゾール
     l  rng/l水       残部 なる組成のめっき浴201!を媛浴し、この浴に11当
りのめっきj用積が2.5dm2になるように、前記の
ようにして触媒化した1mm厚のT同板を浸漬し。
Example 1 J'? E d l turn - Immerse the copper plate in 10% water] sodium ablation solution for 30 seconds at room temperature, wash with water, then continue to 10% nitric acid - In the evening? +: The surface of the body plate was cleaned by immersing it in warm water for 5 seconds and washing with water. Next, the copper foil was treated with tin chloride (JI) 50 g/i hydrochloric acid 1 (J
It was immersed for 2 minutes in a bath solution with the following composition: m (171 water, balance:
The sample was immersed in a solution having a composition of 0 rnl/1 water and the remainder for 1 minute, and then washed in running water for 1 minute. After that, sulfuric acid @ (5 aqueous phase) 0.03 mol N,
N,N',N-tetrakis-0,045 mol(euhydroxypropyl)ethylenediaminevalaformaldehyde 0.1 molSodium hydroxide
Bone 2.2'-dipyridyl with PI of 12.3
Plating bath 201 with a composition of 20 mfl/12-mercaptobenzothiazole l rng/l water and the remainder! A 1 mm thick T plate catalyzed as described above was immersed in this bath so that the plating area per layer was 2.5 dm2.

4時間めっきを行なった。これを1ザイクルとし、計5
サイクルにわたって繰り返した。めっき条件としては、
めっき温度ニア5℃、めっき浴P fi :12.3を
用いた。この時析出速度は10μm/hであった。
Plating was performed for 4 hours. This is 1 cycle, total 5
Repeated over cycles. The plating conditions are as follows:
A plating temperature of 5° C. and a plating bath P fi of 12.3 were used. At this time, the deposition rate was 10 μm/h.

めっき浴の各成分ill技を一定に維持・d理するため
めっき浴コン)o−ラーを使用し、巣1表に示す銅イオ
ン補充液、水酸化ナトリウム面光液、ホルムアルデヒド
補光液を用いて補光した。
In order to maintain and control each component of the plating bath at a constant level, use a plating bath conditioner) and use the copper ion replenisher, sodium hydroxide surface brightening solution, and formaldehyde brightening solution shown in Table 1. It was supplemented with light.

この時補光した哨イオン+iti元液の4汁とサイクル
数との関係を第1図に示した。
Figure 1 shows the relationship between the four liquids of sentinel ion + iti original solution supplemented with light at this time and the number of cycles.

比較例1 補充液組成を第1表比較例に示したものを用いる以外は
、実bIIiI+01と同様にしてめっき液補光を行な
りた。
Comparative Example 1 Plating solution replenishment was carried out in the same manner as in Example bIIiI+01 except that the replenisher composition shown in Table 1 Comparative Example was used.

この時4iti光した銅イオン補光液の付とサイクル数
との関係を第1図に併せ示した。
At this time, the relationship between the application of the copper ion brightening solution that was illuminated for 4 iti and the number of cycles is also shown in FIG.

第1図に示すように比較例では5サイクルのめっ@によ
り銅イオン補充散瞳が206と建浴時のめっき浴量とほ
ぼ同一となるのに対し1本発明の実施例では約101と
50チ程度に減少する。
As shown in Fig. 1, in the comparative example, copper ion replenishment mydriasis was 206 after 5 cycles of plating, which is almost the same as the amount of plating bath at the time of bath preparation, whereas in the example of the present invention, the amount of plating bath was approximately 101 and 50. decrease to a certain degree.

〔発明の効果〕〔Effect of the invention〕

以上のi兄明及び実施例で明らかなように、本発明の銅
イオン補充液によれば、面速無嘔解鋼めっき浴への桐イ
オン補光時にめっき浴量の増加を抑制することができ、
かつめっき処理工程の連続作動操作が容易となりまた廃
液処理に要するコストを低減できるなど、多くの利点を
有するものである。
As is clear from the above description and examples, the copper ion replenisher of the present invention can suppress an increase in the amount of plating bath when supplementing paulownia ions to a surface speed non-coating steel plating bath. I can do it,
It also has many advantages, such as facilitating the continuous operation of the plating process and reducing the cost required for waste liquid treatment.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の詳細な説明するための線図である。 代理人弁理士 則 近 憲 佑(はd=1名)第 1 
図 寸イクル枚、
FIG. 1 is a diagram for explaining the invention in detail. Representative patent attorney Kensuke Chika (d = 1 person) No. 1
One size picture,

Claims (1)

【特許請求の範囲】[Claims] 銅イオン源、還元剤、錯化剤、PH調祭剤、からなる無
電解銅めっき浴に、鋼イオンを補光するVCあたり、該
袖光液を加熱して無電解銅めっき浴に添加することを%
徴とする無電解銅めっき浴管理方法。
The light solution is heated and added to an electroless copper plating bath consisting of a copper ion source, a reducing agent, a complexing agent, and a PH adjusting agent, using a VC that supplements steel ions. %
Characteristic electroless copper plating bath management method.
JP22398482A 1982-12-22 1982-12-22 Control method of electroless copper plating bath Pending JPS59116364A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22398482A JPS59116364A (en) 1982-12-22 1982-12-22 Control method of electroless copper plating bath

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22398482A JPS59116364A (en) 1982-12-22 1982-12-22 Control method of electroless copper plating bath

Publications (1)

Publication Number Publication Date
JPS59116364A true JPS59116364A (en) 1984-07-05

Family

ID=16806751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22398482A Pending JPS59116364A (en) 1982-12-22 1982-12-22 Control method of electroless copper plating bath

Country Status (1)

Country Link
JP (1) JPS59116364A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110387574A (en) * 2018-04-19 2019-10-29 台湾积体电路制造股份有限公司 The control method and semiconductor equipment of chemical concentrations in electrolyte

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110387574A (en) * 2018-04-19 2019-10-29 台湾积体电路制造股份有限公司 The control method and semiconductor equipment of chemical concentrations in electrolyte
US11280021B2 (en) 2018-04-19 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method of controlling chemical concentration in electrolyte and semiconductor apparatus
US11668019B2 (en) 2018-04-19 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of controlling chemical concentration in electrolyte

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