JPS59113625A - Detecting method of end point of plasma etching for organic-matter coating - Google Patents

Detecting method of end point of plasma etching for organic-matter coating

Info

Publication number
JPS59113625A
JPS59113625A JP22436482A JP22436482A JPS59113625A JP S59113625 A JPS59113625 A JP S59113625A JP 22436482 A JP22436482 A JP 22436482A JP 22436482 A JP22436482 A JP 22436482A JP S59113625 A JPS59113625 A JP S59113625A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
etching
plasma
coating
organic
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22436482A
Inventor
Toshimichi Ishida
Masuo Tanno
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

PURPOSE:To stop plasma etching accurately at a boundary point of the organic- matter coating by spectroscopically analyzing luminescence during plasma etching for the organic-matter coating and completing etching at a point of time when an emission-spectrum intensity change peculiar to oxygen gas begins to be stabilized. CONSTITUTION:Oxygen-atom spectrum intensity of 777nm is monitored during plasma etching for the organic-matter coating, and etching is completed at a point of time when the spectrum intensity change begins to be stabilized, thus accurately detecting the end point of etching at proper time in plasma etching for the organic-matter coating. Oxygen-molecule spectrum intensity of 759nm secularly changes similarly, and the end point of plasma etching for the organic- matter coating can be detected from a secular change of emission spectrum intensity peculiar to oxygen gas of 700-800nm. A spectroscope may be used as an interference filter 2, and any apparatus which can spectrally diffract an emission spectrum peculiar to oxygen gas from luminescence by plasma may be used.
JP22436482A 1982-12-20 1982-12-20 Detecting method of end point of plasma etching for organic-matter coating Pending JPS59113625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22436482A JPS59113625A (en) 1982-12-20 1982-12-20 Detecting method of end point of plasma etching for organic-matter coating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22436482A JPS59113625A (en) 1982-12-20 1982-12-20 Detecting method of end point of plasma etching for organic-matter coating

Publications (1)

Publication Number Publication Date
JPS59113625A true true JPS59113625A (en) 1984-06-30

Family

ID=16812596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22436482A Pending JPS59113625A (en) 1982-12-20 1982-12-20 Detecting method of end point of plasma etching for organic-matter coating

Country Status (1)

Country Link
JP (1) JPS59113625A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61247031A (en) * 1985-04-24 1986-11-04 Hitachi Ltd Plasma processor
US5118378A (en) * 1989-10-10 1992-06-02 Hitachi, Ltd. Apparatus for detecting an end point of etching

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5424697A (en) * 1977-07-27 1979-02-24 Eiken Chemical Test paper for occult blood test

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5424697A (en) * 1977-07-27 1979-02-24 Eiken Chemical Test paper for occult blood test

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61247031A (en) * 1985-04-24 1986-11-04 Hitachi Ltd Plasma processor
US5118378A (en) * 1989-10-10 1992-06-02 Hitachi, Ltd. Apparatus for detecting an end point of etching

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