JPS59113625A - Detecting method of end point of plasma etching for organic-matter coating - Google Patents
Detecting method of end point of plasma etching for organic-matter coatingInfo
- Publication number
- JPS59113625A JPS59113625A JP22436482A JP22436482A JPS59113625A JP S59113625 A JPS59113625 A JP S59113625A JP 22436482 A JP22436482 A JP 22436482A JP 22436482 A JP22436482 A JP 22436482A JP S59113625 A JPS59113625 A JP S59113625A
- Authority
- JP
- Japan
- Prior art keywords
- plasma etching
- organic
- etching
- matter coating
- end point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims description 7
- 239000005416 organic matter Substances 0.000 title abstract description 7
- 239000011248 coating agent Substances 0.000 title abstract 6
- 238000000576 coating method Methods 0.000 title abstract 6
- 238000000295 emission spectrum Methods 0.000 claims abstract description 17
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 13
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 12
- 238000001228 spectrum Methods 0.000 abstract description 8
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 6
- 238000004020 luminiscence type Methods 0.000 abstract 2
- 229960003903 oxygen Drugs 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001675 atomic spectrum Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体等の電子部品製造工程にお（１て、有機
物被膜を除去する際の有機物被膜のプラズマエツチング
終点検出法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for detecting the end point of plasma etching of an organic film when removing the organic film in the manufacturing process of electronic parts such as semiconductors (1).
従来例の構成とその問題点
従来の有機物被膜のプラズマエツチング終点検出法はイ
式に示す反応生成物に関する発光スペクトル（Ｈ原子ス
ペクトル：６５６ ｎｍ 、Ｇｏ分子スペクトル： ６
４０ ｎｍ ）や紫外領域の酸素分子スペクトル（０２
分子スペクトル：２９３ｎｍ。Structure of the conventional example and its problems The conventional method for detecting the end point of plasma etching of an organic film has an emission spectrum for the reaction product shown in equation A (H atom spectrum: 656 nm, Go molecule spectrum: 6
40 nm) and the oxygen molecular spectrum in the ultraviolet region (02
Molecular spectrum: 293 nm.
３０８ｎｍ）の強度変化か安定したｕ、’Ｊ点を１．５
ってエツチング終了としていた。308 nm), the stable u, 'J point is 1.5
The etching was finished.
ＣｘＨｑ 十（ｘ ＋ ）０２−ｘＣＯ２↑＋、Ｈ２
０ｆ・・・・・・・・・ （１）
しかしながら上記のような反応生成物に関する発光スペ
クトル強度変化は真空排気能力に応じて、反応生成物が
排気されるまでの時間だけ発光スペクトル強度変化の安
定が遅れるので、プラズマエツチング終点検出時間が長
くなるという欠点を有していた。又、紫外領域の酸素分
子スペクトル強度変化は分光器では検出できても、干渉
フィルターでは透化率が悪いので検出しにぐいという欠
点＼〜
を有していた。CxHq ten (x + )02-xCO2↑+, H2
0f・・・・・・・・・ (1) However, the change in the intensity of the emission spectrum related to the reaction product as described above depends on the evacuation capacity, and the change in the intensity of the emission spectrum due to the reaction product is limited by the time until the reaction product is evacuated. Since stabilization is delayed, the plasma etching end point detection time becomes long. In addition, even though changes in oxygen molecule spectral intensity in the ultraviolet region can be detected with a spectrometer, they have the disadvantage of being difficult to detect with an interference filter due to their poor transmittance.
発明の目的
本発明は上記欠点に鑑み、干渉フィルター、ホトダイオ
ードを使用しプラズマ状態を乱すことなく有機物被膜の
プラズマエツチング終点検出法を提供するものである。OBJECTS OF THE INVENTION In view of the above drawbacks, the present invention provides a method for detecting the end point of plasma etching of an organic film using an interference filter and a photodiode without disturbing the plasma state.
発明の構成
本発明はプラズマ状態からの発光のうち、７００〜８０
０ｎｍの酸素ガス特有の発光スペクトル強度変化をモニ
タリングすることにより、有機物被膜のプラズマエツチ
ング終点を検出するものである。有機物被膜は前記イ式
に示すように、励起された酸素原子、分子及びイオンが
プラズマエツチング反応に寄与するため、プラズマエツ
チング中は励起された酸素原子２分子及びイオンの発光
スペクトル強度は小さく、プラズマエツチング終了時に
は励起された酸素原子２分子及びイオンの発光スペクト
ル強度は大きくなり、かつ安定化する。Structure of the Invention The present invention deals with 700 to 80 of the light emitted from the plasma state.
The end point of plasma etching of an organic film is detected by monitoring the intensity change in the emission spectrum characteristic of oxygen gas at 0 nm. As shown in equation A above, in the organic film, excited oxygen atoms, molecules, and ions contribute to the plasma etching reaction, so during plasma etching, the emission spectrum intensity of two excited oxygen atoms and ions is small, and the plasma At the end of etching, the intensity of the emission spectrum of two excited oxygen atoms and ions increases and stabilizes.
よって本発明は７００〜ｓｏｏ ｎｍの酸素ガス特有の
発光スペクトル強度変化をモニタリングすることにより
有機物被膜の境界点で正確にプラズマエツチングを停止
することができるという特有の効果を有している。Therefore, the present invention has the unique effect of being able to accurately stop plasma etching at the boundary point of the organic film by monitoring the intensity change in the emission spectrum characteristic of oxygen gas in the range of 700 to soon.
実施例の説明
以下本発明の実施例について、図面を参照しながら説明
する。DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings.
プラズマエツチング条件、被エンチング物条件及び分光
分析条件は下記の通りである。The plasma etching conditions, conditions for the object to be etched, and spectroscopic analysis conditions are as follows.
（プラズマエツチング条件）
反応ガス：酸素ガス
酸素圧カニ Ｉ Ｔｏｒｒ
高周波型カニ４００Ｗ
（被エンチング物条件）
有機物被膜 ： ０ＦＰＲ−８ｏｏ（東京応化製）有機
物被膜厚 ＝１μｍ
有機物被膜付ウェハ枚数： １ｏｏ枚（４インチ）（分
光分析条件）
干渉フィルターの主波長ニア７７ｎｍ
ホトダイオード： ５７８０−８ＢＫ（浜松テレビ製）
第１図は本発明の実施例πおける有機物被膜のプラズマ
エツチング終点検出法の概略図を示すも第２図は酸素ガ
スの高周波放電による発光スペク［・ルを示し、第３図
は７７７ｎｍの酸素原子スペクトル強度のプラズマエツ
チング時間に対する経時変化を示す。第４図はＭ３図の
Ａ点でプラズマエツチングを停止した場合のエツチング
状態を示しているがウニ八表面に有機物がエツチングさ
れずに残っていることがわかる。第５図は第３図のＢ点
でプラズマエツチングを停止した場合のエツチング状態
を示しているが、ウェハ表面の有機物膜が完全に除去さ
れている。(Plasma etching conditions) Reactive gas: Oxygen gas, oxygen pressure, I Torr, high frequency type crab, 400W (Conditions for etching object) Organic film: 0FPR-8oo (manufactured by Tokyo Ohka) Organic film thickness = 1 μm Number of wafers with organic film: 1oo ( 4 inches) (spectral analysis conditions) Main wavelength of interference filter near 77 nm Photodiode: 5780-8BK (manufactured by Hamamatsu Television)
Fig. 1 shows a schematic diagram of a method for detecting the end point of plasma etching of an organic film in Example π of the present invention, Fig. 2 shows an emission spectrum due to high frequency discharge of oxygen gas, and Fig. 3 shows a 777 nm oxygen emission spectrum. It shows the temporal change of atomic spectrum intensity with respect to plasma etching time. Figure 4 shows the etching state when plasma etching is stopped at point A in Figure M3, and it can be seen that organic matter remains on the surface of the sea urchin without being etched. FIG. 5 shows the etching state when plasma etching is stopped at point B in FIG. 3, and the organic film on the wafer surface has been completely removed.
以上のように本実施例によれば、有機物被膜のプラズマ
エツチング中において７７７ｎｍの酸素原子スペクトル
強度をモニタリングし、そのスペクトル強度変化が安定
化しはじめた時点を持ってエツチングを終了することに
より、有機物被膜のプラズマエツチングを過不足なく正
確にエツチング終了点を検出することができる。As described above, according to this embodiment, the spectral intensity of oxygen atoms at 777 nm is monitored during plasma etching of the organic film, and the etching is terminated when the change in the spectral intensity begins to stabilize. It is possible to accurately detect the end point of plasma etching without too much or too little.
なお、第１図において干渉フィルター２は分光器でもよ
く、プラズマによる発光から酸素ガス特有の発光スペク
トルを分光できるものなら何んでもよい。又、ホトダイ
オード３は、光電変換素子であれば何んでもよいことは
言うまでもない。In FIG. 1, the interference filter 2 may be a spectrometer, or any device that can separate the emission spectrum peculiar to oxygen gas from the light emitted by plasma. Further, it goes without saying that the photodiode 3 may be any photoelectric conversion element.
実施例においては了７７ ｎｍの酸素原子スペクトル強
度の経時変化を示したが、７６９ｎｍの酸素分子スペク
トル強度の経時変化も同様であり、７００〜８００ｎｍ
の酸素ガス特有の発光スペクトル強度の経時変化から有
機物被膜のプラズマエツチング終点を検出できる。In the example, the time-dependent change in the oxygen atomic spectrum intensity at 77 nm was shown, but the time-dependent change in the 769 nm oxygen molecule spectrum intensity was also similar, and
The end point of plasma etching of an organic film can be detected from the change over time in the intensity of the emission spectrum characteristic of oxygen gas.
発明の効果
以上のように本発明は有機物被膜のプラズマエツチング
中の発光を分光分析し、７００〜８００ｎｍの酸素ガス
特有の発光スペクトル強度変化が安定化しはじめた時点
を持ってエツチングを終了することによって、有機物被
膜の境界点で正確にプラズマエツチングを停止すること
ができ、その実用的効果は大なるものが多る。Effects of the Invention As described above, the present invention spectroscopically analyzes the light emission during plasma etching of an organic film, and terminates the etching at the point when the change in intensity of the light emission spectrum characteristic of oxygen gas in the range of 700 to 800 nm begins to stabilize. , plasma etching can be accurately stopped at the boundary point of the organic film, and its practical effects are many.
第１図は本発明の一実施例における有機物被膜のプラズ
マエツチング終点検出法を説明する工程の概略図、第２
図は酸素ガスの高周波放電による発光スペクトル、第３
図は７７７ｎｍの酸素原子スペクトル強度のプラズマエ
ツチング時間に対する経時変化図、第４図は第３図のＡ
点でプラズマエツチングを停止した場合のエツチング状
態を示す顕微鏡写真、第５図は第３図のＢ点、すなわち
本実施例によってプラズマエツチングを停止した場合の
エツチング状態を示す顕微鏡写真である。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第２
図
慎長（ｒｕη）FIG. 1 is a schematic diagram of a process for explaining a method for detecting the end point of plasma etching of an organic film in one embodiment of the present invention, and FIG.
The figure shows the emission spectrum due to high-frequency discharge of oxygen gas.
The figure shows the time course of the 777 nm oxygen atom spectral intensity versus plasma etching time, and Figure 4 is A of Figure 3.
FIG. 5 is a microphotograph showing the etching state when plasma etching is stopped at point B in FIG. 3, that is, the etching state when plasma etching is stopped according to this embodiment. Name of agent: Patent attorney Toshio Nakao and 1 other person 2nd
Shincho Zu (ruη)
Claims (1)
し、７００〜８００ｎｍの酸素ガス特有の発光スペクト
ル強度変化が安定化しはじめた時点でエツチング終了と
する有機物被膜のプラズマエツチング終点検出法。A method for detecting the end point of plasma etching of an organic film, in which the emission during plasma etching of the organic film is spectroscopically analyzed, and the etching is terminated when the intensity change in the emission spectrum characteristic of oxygen gas in the range of 700 to 800 nm begins to stabilize.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22436482A JPS59113625A (en) | 1982-12-20 | 1982-12-20 | Detecting method of end point of plasma etching for organic-matter coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22436482A JPS59113625A (en) | 1982-12-20 | 1982-12-20 | Detecting method of end point of plasma etching for organic-matter coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59113625A true JPS59113625A (en) | 1984-06-30 |
Family
ID=16812596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22436482A Pending JPS59113625A (en) | 1982-12-20 | 1982-12-20 | Detecting method of end point of plasma etching for organic-matter coating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59113625A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61247031A (en) * | 1985-04-24 | 1986-11-04 | Hitachi Ltd | Plasma processor |
| US5118378A (en) * | 1989-10-10 | 1992-06-02 | Hitachi, Ltd. | Apparatus for detecting an end point of etching |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5424697A (en) * | 1977-07-27 | 1979-02-24 | Eiken Chemical | Test paper for occult blood test |
-
1982
- 1982-12-20 JP JP22436482A patent/JPS59113625A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5424697A (en) * | 1977-07-27 | 1979-02-24 | Eiken Chemical | Test paper for occult blood test |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61247031A (en) * | 1985-04-24 | 1986-11-04 | Hitachi Ltd | Plasma processor |
| US5118378A (en) * | 1989-10-10 | 1992-06-02 | Hitachi, Ltd. | Apparatus for detecting an end point of etching |
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