JPS59111291A - Method of forming electrode of honeycomb heater - Google Patents

Method of forming electrode of honeycomb heater

Info

Publication number
JPS59111291A
JPS59111291A JP21987482A JP21987482A JPS59111291A JP S59111291 A JPS59111291 A JP S59111291A JP 21987482 A JP21987482 A JP 21987482A JP 21987482 A JP21987482 A JP 21987482A JP S59111291 A JPS59111291 A JP S59111291A
Authority
JP
Japan
Prior art keywords
electrode
power supply
metal
heater
honeycomb heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21987482A
Other languages
Japanese (ja)
Inventor
石津 義昭
塩井 了一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP21987482A priority Critical patent/JPS59111291A/en
Publication of JPS59111291A publication Critical patent/JPS59111291A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 技術分野 本発明は、ハニカムヒータを構成するにあたって、給電
板で挟持するセラミ・ンク半導体の電極部分を補強する
ハニカムヒータの電極形成方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a method for forming electrodes of a honeycomb heater for reinforcing electrode portions of a ceramic semiconductor sandwiched between power supply plates when constructing the honeycomb heater.

背景技術 従来、ハニカムヒータを構成する場合、セラミック半導
体の多数の貫通孔を有する面に電極を形成するには金属
を高温にして溶射する金属溶射法が好適であることが知
られている(特公昭54−30133号)。然し、この
金属溶射では電極表面が極めて粗荒であるため、その電
極面にセラミンク半導体を挟持する給電板を接触させる
と接触抵抗が大きくなり、ハニカムヒータの如き大電流
を常時通電するものでは給電板と接触する部分に局部的
な高温帯熱現象が生じて電極焼きを誘起する原因となっ
ている。
BACKGROUND ART Conventionally, when constructing a honeycomb heater, it has been known that a metal spraying method in which metal is sprayed at a high temperature is suitable for forming electrodes on a surface of a ceramic semiconductor having a large number of through holes. Publication No. 54-30133). However, with this metal spraying, the electrode surface is extremely rough, so when a power supply plate holding a ceramic semiconductor is brought into contact with the electrode surface, the contact resistance becomes large, and in devices such as honeycomb heaters that constantly carry a large current, the power supply is difficult. A localized high-temperature zone phenomenon occurs at the part that contacts the plate, causing electrode burning.

発明の開示 本発明は、斯る欠点を除去するべく電極面を補強するハ
ニカムヒータの電極形成方法を提供すること、を目的と
する。
DISCLOSURE OF THE INVENTION An object of the present invention is to provide a method for forming electrodes of a honeycomb heater that reinforces the electrode surface in order to eliminate such drawbacks.

即ち、本発明に係る電極形成方法においては、給電板と
接触する電極の表面部分を銀、クロム。
That is, in the electrode forming method according to the present invention, the surface portion of the electrode that contacts the power supply plate is made of silver or chromium.

アルミニウム等の導電性の高い金属で被覆処理するよう
にされている。
It is coated with a highly conductive metal such as aluminum.

以下、これを図示実施例に基づいて説明すれば、次の通
りである。
This will be explained below based on the illustrated embodiments.

図示のハニカムヒータは、円盤形に形成したセラミック
半導体lを持ち、その両側面に位置する多数の貫通孔が
設けられた各面に電極2a、、2bが形成されている。
The illustrated honeycomb heater has a ceramic semiconductor l formed in the shape of a disk, and electrodes 2a, 2b are formed on each side of the ceramic semiconductor l, which is provided with a large number of through holes located on both sides thereof.

このセラミック半導体1は、両側より各電極2a、2b
と接触するよう配置したーステンレス製等の金属給電板
3.4で挟圧支持されている。これら給電板3,4は絶
縁空間を持って対向配置され、その側端縁より突出成形
した端子盤3a、4aに電源と接続する電気ワイヤをね
じ止め固定することにより導電可能にされている。また
、これらの給電板3,4にはセラミック半導体lを介し
て通風可能にする開孔が設けられ、その開孔縁がセラミ
ック半導体lの周縁面で電極2a、2bと接触するよう
になっている。
This ceramic semiconductor 1 has electrodes 2a and 2b from both sides.
It is supported under pressure by a metal power supply plate 3.4 made of stainless steel or the like, which is arranged so as to be in contact with the power supply plate 3.4. These power supply plates 3 and 4 are arranged facing each other with an insulating space between them, and are made electrically conductive by fixing an electric wire connected to a power source to terminal boards 3a and 4a protruding from their side edges with screws. Further, these power supply plates 3 and 4 are provided with holes that allow ventilation through the ceramic semiconductor l, and the edges of the holes are in contact with the electrodes 2a and 2b on the peripheral surface of the ceramic semiconductor l. There is.

電極2a、2bは、銅、亜鉛、アルミニウム等の金属層
で形成されている。この層形成には金属を高温に加熱し
て吹付ける溶射法を適用し、その金属をlO°〜60°
程度の角度で斜めから溶射すれば貫通孔の側面までに付
着させない望ましい電極を形成できる。この電極2a、
2bに対しては、給電板3.4と接触する部分に導電性
の高い金属で被膜5を形成する。図示実施例では、給電
板3.4の開孔縁が接触するセラミック半導体lの周縁
面にリング状に被膜5が設けられている。それを形成す
る導電性の高い金属としては銀、クロム、アルミニウム
等があり、それをスクリーン印刷することにより電極2
a、2bの表面被覆として形成することができる。また
、この被膜5は給電板3.4と接触する部分のみに設け
てもよく、また1mm程度給電板3,4の開孔縁よりは
み出させるように形成してもよい。セラミック半導体l
には金属溶射で電極2a、2bを、またスクリーン印刷
で被膜5を形成した後焼付は処理を施す。その焼付は処
理は電極2a、2b及び被膜5を形成する金属を酸化し
ない程度の温度で行い、具体的には450 ’O〜60
0 ’0の温度下でlO分程度加熱すれば足りる。この
焼イ・1け処理を施すと、被膜5の付着強度を向上する
ことは勿論、溶射付着した電極2a、2bのセラミンク
半導体1に対する刺着強度を向上すると共に固有抵抗を
半減させるようにもできる。
The electrodes 2a and 2b are formed of metal layers such as copper, zinc, and aluminum. To form this layer, a thermal spraying method is applied in which the metal is heated to a high temperature and sprayed, and the metal is heated to a temperature of 10° to 60°.
By performing oblique thermal spraying at a certain angle, it is possible to form a desirable electrode that does not adhere to the side surface of the through hole. This electrode 2a,
2b, a coating 5 made of highly conductive metal is formed on the portion that contacts the power supply plate 3.4. In the illustrated embodiment, a ring-shaped coating 5 is provided on the peripheral surface of the ceramic semiconductor l with which the aperture edge of the power supply plate 3.4 comes into contact. Highly conductive metals that form it include silver, chromium, aluminum, etc., and by screen printing it, the electrode 2
It can be formed as a surface coating of a, 2b. Further, the coating 5 may be provided only on the portion that contacts the power supply plates 3.4, or may be formed so as to protrude from the edges of the openings of the power supply plates 3, 4 by about 1 mm. ceramic semiconductor l
The electrodes 2a and 2b are formed by metal spraying, and the coating 5 is formed by screen printing, followed by baking. The baking process is carried out at a temperature that does not oxidize the metal forming the electrodes 2a, 2b and the coating 5, specifically, 450'O to 600'O.
It is sufficient to heat for about 10 minutes at a temperature of 0'0. By performing this baking/single treatment, it is possible to not only improve the adhesion strength of the coating 5, but also to improve the adhesion strength of the sprayed electrodes 2a and 2b to the ceramic semiconductor 1, and to reduce the specific resistance by half. can.

コノように構成するハニカムヒータでは、給電板3.4
に供給する電圧を金属被11fi5を通して電極2a、
2bに通電することができる。その金属被膜5は導電性
の良好な金属で形成されているため、給電板3.4との
接触抵抗を数10分の1に減少することができ、また給
電板3,4の接触面積を少なくしても良好な導電性を保
つことができるので通風面積が大きく取れるようになる
。なお、給電板3.4はセラミック半導体重を挟持した
状態で絶縁基枠6に装着することができる。この絶縁基
枠6は耐熱性を有する樹脂で形成するようにでき、その
板面に設けたスリ7)8aに給電板3の折曲風3bを挿
置してスリットBa内の突起6bで係止することにより
給電板3,4及びセラミンク半導体1を止着することが
できる。
In the honeycomb heater configured like this, the power supply plate 3.4
The voltage supplied to the electrodes 2a,
2b can be energized. Since the metal coating 5 is made of a metal with good conductivity, the contact resistance with the power supply plates 3.4 can be reduced to several tenths, and the contact area of the power supply plates 3, 4 can be reduced. Even if the amount is reduced, good conductivity can be maintained, so a large ventilation area can be obtained. Note that the power supply plate 3.4 can be attached to the insulating base frame 6 while holding the ceramic semiconductor weight therebetween. This insulating base frame 6 can be made of heat-resistant resin, and the bending wind 3b of the power supply plate 3 is inserted into the slit 7) 8a provided on the plate surface and engaged with the protrusion 6b in the slit Ba. By stopping them, the power supply plates 3, 4 and the ceramic semiconductor 1 can be fixedly attached.

発明の効果 このように、本発明に係る電極の形成方法に依れば、溶
射電極の給電板と接触する部分に導電性の高い金属被膜
を介装するため、電極との接触抵抗を低減して良好な導
電性を保て得るようになり、セラミンク半導体の焼損等
の発生を防止することができる。
Effects of the Invention As described above, according to the method of forming an electrode according to the present invention, since a highly conductive metal coating is interposed in the part of the sprayed electrode that contacts the power supply plate, the contact resistance with the electrode is reduced. This makes it possible to maintain good conductivity and prevent burnout of the ceramic semiconductor.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係る電極の形成方法を適用するハニカ
ムヒータの斜視図、第2図は同方法を適用したハニカム
ヒータの半導体部分を示す断面図、第3図は同半導体部
分の一部拡大断面図である。 l二手導体、2a、2b:電極、3,4:給電板、5:
導電性の良好な金属被膜。
Fig. 1 is a perspective view of a honeycomb heater to which the electrode forming method according to the present invention is applied, Fig. 2 is a sectional view showing a semiconductor portion of the honeycomb heater to which the same method is applied, and Fig. 3 is a part of the semiconductor portion. It is an enlarged sectional view. l Two-handed conductor, 2a, 2b: electrode, 3, 4: power supply plate, 5:
Metal coating with good conductivity.

Claims (2)

【特許請求の範囲】[Claims] (1)半導体磁器の多数の貫通孔を有する面に金属溶射
て電極を形成し、その半導体磁器の電極面を相対向する
給電板の開孔縁で挟持することにより/\ニカムヒータ
を構成するにあたって、上記電極の少なくとも給電板と
接触する表面部分を銀、クロム、アルミニウム等の導電
性の高い金属で被覆処理したことを特徴とする/\ニカ
ムヒータの電極形成方法。
(1) By forming electrodes by spraying metal on a surface of semiconductor porcelain that has many through holes, and sandwiching the electrode surface of the semiconductor porcelain between the perforated edges of opposing power supply plates, \\In constructing the Nicum heater. A method for forming an electrode for a nicham heater, characterized in that at least the surface portion of the electrode that contacts the power supply plate is coated with a highly conductive metal such as silver, chromium, or aluminum.
(2)上記導電性の高い金属をスクリーン印刷で刺着し
て後、金属を酸化しない程度の温度で電極に焼伺は処理
を施すようにしたところの特許請求の範囲第1項記載の
/・ニカムヒータの電極形成方法。
(2) The method according to claim 1, wherein after the highly conductive metal is attached by screen printing, the electrode is burnt at a temperature that does not oxidize the metal.・Method for forming electrodes of Nikum heater.
JP21987482A 1982-12-15 1982-12-15 Method of forming electrode of honeycomb heater Pending JPS59111291A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21987482A JPS59111291A (en) 1982-12-15 1982-12-15 Method of forming electrode of honeycomb heater

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21987482A JPS59111291A (en) 1982-12-15 1982-12-15 Method of forming electrode of honeycomb heater

Publications (1)

Publication Number Publication Date
JPS59111291A true JPS59111291A (en) 1984-06-27

Family

ID=16742407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21987482A Pending JPS59111291A (en) 1982-12-15 1982-12-15 Method of forming electrode of honeycomb heater

Country Status (1)

Country Link
JP (1) JPS59111291A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192441A (en) * 1975-02-12 1976-08-13
JPS54112037A (en) * 1978-02-22 1979-09-01 Tdk Electronics Co Ltd Honeycomb heating element and its preparation
JPS54112036A (en) * 1978-02-22 1979-09-01 Tdk Electronics Co Ltd Honeycomb heating element and its preparation
JPS56165293A (en) * 1980-05-21 1981-12-18 Nippon Soken Resistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192441A (en) * 1975-02-12 1976-08-13
JPS54112037A (en) * 1978-02-22 1979-09-01 Tdk Electronics Co Ltd Honeycomb heating element and its preparation
JPS54112036A (en) * 1978-02-22 1979-09-01 Tdk Electronics Co Ltd Honeycomb heating element and its preparation
JPS56165293A (en) * 1980-05-21 1981-12-18 Nippon Soken Resistor

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