JPS5897917U - ガス絶縁開閉装置 - Google Patents
ガス絶縁開閉装置Info
- Publication number
- JPS5897917U JPS5897917U JP19444981U JP19444981U JPS5897917U JP S5897917 U JPS5897917 U JP S5897917U JP 19444981 U JP19444981 U JP 19444981U JP 19444981 U JP19444981 U JP 19444981U JP S5897917 U JPS5897917 U JP S5897917U
- Authority
- JP
- Japan
- Prior art keywords
- outer shell
- shell container
- insulated switchgear
- gas insulated
- partition plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Gas-Insulated Switchgears (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19444981U JPS5897917U (ja) | 1981-12-23 | 1981-12-23 | ガス絶縁開閉装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19444981U JPS5897917U (ja) | 1981-12-23 | 1981-12-23 | ガス絶縁開閉装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5897917U true JPS5897917U (ja) | 1983-07-04 |
JPS6345773Y2 JPS6345773Y2 (enrdf_load_stackoverflow) | 1988-11-29 |
Family
ID=30107766
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19444981U Granted JPS5897917U (ja) | 1981-12-23 | 1981-12-23 | ガス絶縁開閉装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5897917U (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US7094685B2 (en) | 2002-01-26 | 2006-08-22 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US7175713B2 (en) | 2002-01-25 | 2007-02-13 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US7588980B2 (en) | 2006-07-31 | 2009-09-15 | Applied Materials, Inc. | Methods of controlling morphology during epitaxial layer formation |
-
1981
- 1981-12-23 JP JP19444981U patent/JPS5897917U/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7175713B2 (en) | 2002-01-25 | 2007-02-13 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US7094685B2 (en) | 2002-01-26 | 2006-08-22 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US7473638B2 (en) | 2002-01-26 | 2009-01-06 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
US7588980B2 (en) | 2006-07-31 | 2009-09-15 | Applied Materials, Inc. | Methods of controlling morphology during epitaxial layer formation |
Also Published As
Publication number | Publication date |
---|---|
JPS6345773Y2 (enrdf_load_stackoverflow) | 1988-11-29 |
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