JPS5895875A - 光導電部材 - Google Patents

光導電部材

Info

Publication number
JPS5895875A
JPS5895875A JP56194292A JP19429281A JPS5895875A JP S5895875 A JPS5895875 A JP S5895875A JP 56194292 A JP56194292 A JP 56194292A JP 19429281 A JP19429281 A JP 19429281A JP S5895875 A JPS5895875 A JP S5895875A
Authority
JP
Japan
Prior art keywords
layer
atoms
layer region
amorphous
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56194292A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6316917B2 (enrdf_load_stackoverflow
Inventor
Kyosuke Ogawa
小川　恭介
Shigeru Shirai
茂 白井
Junichiro Kanbe
純一郎 神辺
Keishi Saito
恵志 斉藤
Yoichi Osato
陽一 大里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56194292A priority Critical patent/JPS5895875A/ja
Priority to US06/443,656 priority patent/US4460669A/en
Priority to GB08233457A priority patent/GB2111708B/en
Priority to DE3243891A priority patent/DE3243891C2/de
Publication of JPS5895875A publication Critical patent/JPS5895875A/ja
Publication of JPS6316917B2 publication Critical patent/JPS6316917B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G03G5/08242—Silicon-based comprising three or four silicon-based layers at least one with varying composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
JP56194292A 1981-11-26 1981-12-01 光導電部材 Granted JPS5895875A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56194292A JPS5895875A (ja) 1981-12-01 1981-12-01 光導電部材
US06/443,656 US4460669A (en) 1981-11-26 1982-11-22 Photoconductive member with α-Si and C, U or D and dopant
GB08233457A GB2111708B (en) 1981-11-26 1982-11-24 Photoconductive member
DE3243891A DE3243891C2 (de) 1981-11-26 1982-11-26 Elektrofotografisches Aufzeichnungsmaterial

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56194292A JPS5895875A (ja) 1981-12-01 1981-12-01 光導電部材

Publications (2)

Publication Number Publication Date
JPS5895875A true JPS5895875A (ja) 1983-06-07
JPS6316917B2 JPS6316917B2 (enrdf_load_stackoverflow) 1988-04-11

Family

ID=16322162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56194292A Granted JPS5895875A (ja) 1981-11-26 1981-12-01 光導電部材

Country Status (1)

Country Link
JP (1) JPS5895875A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59131941A (ja) * 1983-01-19 1984-07-28 Toshiba Corp アモルフアスシリコン感光体
JPS6022382A (ja) * 1983-07-19 1985-02-04 Toshiba Corp 光導電部材
JPS6073628A (ja) * 1983-09-30 1985-04-25 Toshiba Corp 光導電性部材
JPS61138958A (ja) * 1984-12-12 1986-06-26 Toshiba Corp 電子写真感光体
JPH0247256A (ja) * 1988-06-22 1990-02-16 Boc Group Inc:The 反応形スパッタリングによる酸化物膜の形成

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59131941A (ja) * 1983-01-19 1984-07-28 Toshiba Corp アモルフアスシリコン感光体
JPS6022382A (ja) * 1983-07-19 1985-02-04 Toshiba Corp 光導電部材
JPS6073628A (ja) * 1983-09-30 1985-04-25 Toshiba Corp 光導電性部材
JPS61138958A (ja) * 1984-12-12 1986-06-26 Toshiba Corp 電子写真感光体
JPH0247256A (ja) * 1988-06-22 1990-02-16 Boc Group Inc:The 反応形スパッタリングによる酸化物膜の形成

Also Published As

Publication number Publication date
JPS6316917B2 (enrdf_load_stackoverflow) 1988-04-11

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