JPS5894140U - Semiconductor laser light intensity drop display device - Google Patents

Semiconductor laser light intensity drop display device

Info

Publication number
JPS5894140U
JPS5894140U JP18825681U JP18825681U JPS5894140U JP S5894140 U JPS5894140 U JP S5894140U JP 18825681 U JP18825681 U JP 18825681U JP 18825681 U JP18825681 U JP 18825681U JP S5894140 U JPS5894140 U JP S5894140U
Authority
JP
Japan
Prior art keywords
semiconductor laser
display device
laser light
light intensity
light amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18825681U
Other languages
Japanese (ja)
Inventor
賢 手塚
秀夫 河内
Original Assignee
ソニー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソニー株式会社 filed Critical ソニー株式会社
Priority to JP18825681U priority Critical patent/JPS5894140U/en
Publication of JPS5894140U publication Critical patent/JPS5894140U/en
Pending legal-status Critical Current

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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Optical Head (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は半導体レーザの電流−光出力の関係を示す特性
図、第２図は本考案に係る半導体レーザ光量低下表示装
置の一例を示す回路図、第３図は本考案に係る半導体レ
ーザ光量低下表示装置の他の例を示す回路図である。 図中、１は半導体レーザ、２はモニタｍ−ダイオード、
３はＩ／Ｖ変換回路（電流／電圧変換回路）、４は誤差
検出回路、５は電流制御回路、６゜１８は比較回路、７
は表示回路、１０は受光素子、１５は加算回路、１７は
積分回路である。Fig. 1 is a characteristic diagram showing the relationship between current and optical output of a semiconductor laser, Fig. 2 is a circuit diagram showing an example of a semiconductor laser light intensity reduction display device according to the present invention, and Fig. 3 is a semiconductor laser light intensity according to the present invention. FIG. 7 is a circuit diagram showing another example of a drop display device. In the figure, 1 is a semiconductor laser, 2 is a monitor m-diode,
3 is an I/V conversion circuit (current/voltage conversion circuit), 4 is an error detection circuit, 5 is a current control circuit, 6°18 is a comparison circuit, 7
1 is a display circuit, 10 is a light receiving element, 15 is an addition circuit, and 17 is an integration circuit.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体レーザが発する光の光量に応じた出力を発生する
光量検出部と、該光量検出部の出力と所定の基準値とを
比較する比較部と、該比較部からの比較出力にもとずき
、上記光量が所定値以下に低下したことを表示する表示
部とからなる半導体レーザ光量低下表示装置。A light amount detection section that generates an output corresponding to the amount of light emitted by the semiconductor laser, a comparison section that compares the output of the light amount detection section with a predetermined reference value, and a comparison output based on the comparison output from the comparison section. , a semiconductor laser light amount reduction display device comprising: a display section that displays that the light amount has decreased to a predetermined value or less;
JP18825681U 1981-12-17 1981-12-17 Semiconductor laser light intensity drop display device Pending JPS5894140U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18825681U JPS5894140U (en) 1981-12-17 1981-12-17 Semiconductor laser light intensity drop display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18825681U JPS5894140U (en) 1981-12-17 1981-12-17 Semiconductor laser light intensity drop display device

Publications (1)

Publication Number Publication Date
JPS5894140U true JPS5894140U (en) 1983-06-25

Family

ID=30102905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18825681U Pending JPS5894140U (en) 1981-12-17 1981-12-17 Semiconductor laser light intensity drop display device

Country Status (1)

Country Link
JP (1) JPS5894140U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022747A (en) * 1983-07-19 1985-02-05 Fujitsu Ten Ltd Protecting circuit of laser pickup
JPS6246581A (en) * 1985-08-24 1987-02-28 Fuji Electric Co Ltd Laser irradiation device
JPS6248118A (en) * 1985-08-27 1987-03-02 Omron Tateisi Electronics Co Bias circuit of laser diode
JPH05250715A (en) * 1992-03-04 1993-09-28 Fujitsu Ltd Deciding method for life of laser light source

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5611631A (en) * 1979-07-04 1981-02-05 Hitachi Ltd Optical recording and reproducing unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5611631A (en) * 1979-07-04 1981-02-05 Hitachi Ltd Optical recording and reproducing unit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022747A (en) * 1983-07-19 1985-02-05 Fujitsu Ten Ltd Protecting circuit of laser pickup
JPS6246581A (en) * 1985-08-24 1987-02-28 Fuji Electric Co Ltd Laser irradiation device
JPS6248118A (en) * 1985-08-27 1987-03-02 Omron Tateisi Electronics Co Bias circuit of laser diode
JPH05250715A (en) * 1992-03-04 1993-09-28 Fujitsu Ltd Deciding method for life of laser light source

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