JPS5891577A - Magnetic bubble memory system - Google Patents

Abstract

PURPOSE:To make a system have interchangeability, and also to operate it stably, by providing a means for writing and reading out a fundamental constant and an optimum driving parameter of a magnetic bubble memory device, on a magnetic bubble memory system. CONSTITUTION:A magnetic bubble memory system consists of a central processor 10, a direct peripheral circuit 20 containing a magnetic bubble memory device MBM21 having a magnetic bubble memory element, and an indirect peripheral circuit 30. In order to make a system have interchangeability by installing a magnetic bubble memory set so as to be freely attachable and detachable, RAMs 35, 36 which are capable of freely reading and writing a fundamental constant and optimum driving parameter information of the MBM21 are connected to a controlling circuit 32 for controlling write and read-out operations, and a function timing generating circuit 31. In this way, the magnetic bubble memory system having interchangeability is operated stably.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a magnetic bubble memory system, in particular a magnetic bubble memory device which stores optimum driving parameters and basic constants suitable for magnetic bubble memory cassettes and magnetic bubble memory devices that require compatibility. It concerns memory systems.

t7I! , 1 is a main block circuit diagram showing an example of a generally used magnetic bubble memory system. In the figure, the magnetic bubble memory system includes a central processing sII&s circuit (hereinafter referred to as opu) 10 that sends out a required code, and a magnetic bubble memory element.

Rotating magnetic field generation: a direct peripheral circuit 20 that directly drives and operates the magnetic bubble mechanism 4 & ν device consisting of an assembly of permanent magnets for generating a rotating magnetic field and a bias magnetic field; An indirect peripheral circuit 30 is connected to indirectly drive and operate the magnetic bubble memory device. And the queen direct peripheral circuit 2
(1. Magnetic bubble memory device (hereinafter referred to as MBM) 21, which has a magnetic bubble memory element and is configured by integrating a rotating magnetic field generating coil for driving this element, a permanent magnet for generating a vertical magnetic field, a magnetization plate, etc. And this MBMHK1
Rotating magnetic field drive path (hereinafter ODI
) 22, a pulse current drive circuit (hereinafter referred to as OPG) 23, which supplies the MIM 21 with a pulse current for generating generated pulses required for operation,
It is composed of a sense amplifier circuit (hereinafter referred to as 8M) 24 that reads the output from the BM 21. In other words, it is composed of a circuit section that directly drives and operates this direct peripheral circuit 20FiMaM2t. On the other hand, the indirect peripheral circuit 5eFi% MBM21 has a 7-anchor tie-building generating circuit (hereinafter referred to as FTO) 31 that controls the tie-setting current of the ODR 22 and opo 28 required for reading and writing operations, and the writing and reading operations of the MIM 21. A magnetic bubble memory device control circuit (hereinafter referred to as BMO) 32 that controls the MBM 21, and a read-only memory circuit (hereinafter referred to as ROM) that stores basic constants, drive parameters, etc. in advance based on the usage specifications of MBM21. It is composed of 33 and 34.

In a magnetic bubble memory system configured in this manner, the direct peripheral circuit 20 is usually connected to the FiMBM2 in order to provide information versatility to the magnetic bubble memory system.
1t';t, not shown - for example, mounted on a separate printed circuit board and configured to be removably attached to a magnetic bubble memory system, referred to as a magnetic puzzle memory cassette.

However, in the magnetic puzzle memory system with the above configuration, the drive circuit of the MBM 21 installed in this system, for example, the OD wing 22, 0PG23, is adjusted to the optimum drive condition of the MBM 21. Therefore, even if the MBM 21 is replaced, the ROM 33. Since the information stored in 34 is different, the above magnetic bubble memory is manufactured using different magnetic puzzle processes, for example, a magnetic puzzle process with a magnetic bubble diameter of 3Jm and a magnetic bubble process with a magnetic bubble diameter of 2Jm. Even if it is attached to a system and driven, it may become inoperable or stable operation cannot be guaranteed.

Traditional magnetic bubble memory system and MB
The M.21 was completely inconvenient in terms of compatibility.

In recent years, the scope of use of magnetic bubble memory has been expanding, and on the other hand, manufacturing technology has been improving rapidly, and the use of fixed, fixed, and limited use of magnetic bubble memory will become even more important in the future. This was detrimental to range expansion.

Therefore, the present invention has been made in view of the above-mentioned conventional drawbacks, and its purpose is to create a magnetic bubble memory system that improves compatibility by storing its own characteristics. It is about providing.

Embodiments of the present invention will be described in detail below with reference to the drawings.

#! Figure 2 is a circuit diagram of the main part of the plotter, which is similar to Figure 1, for explaining an example of the magnetic bubble memory system according to the present invention.The same symbols as in Figure 1 are the same elements, so the explanation thereof will be omitted. . In FIG. 2, 1M032. F? G
Random access memories (hereinafter referred to as RM M) 35 and 36 that can freely read basic constants and optimal drive parameter information 41 of the MBM 21 are connected to 31, respectively. Additionally, in this case, an 8VIN-ODD type magnetic bubble memory element 21a as shown in an enlarged plan view in FIG. 3 of the MBM 211d is arranged, and a replicate gate 41. Conductors with various functions are formed in the swap gate 42 and the generators 43m and 43, and by supplying driving pulse current from the OPG 23, these conductors perform generation, erasure, division, etc. of transfer path switching 1 of magnetic bubbles. Each predetermined function is performed.

It is also a magnetic bubble detector that detects the presence or absence of 44&, 44bFi magnetic bubbles, and this magnetic bubble detector 44m
, 44b are connected to the 8mm M24. 45m.

45b is a data store loop that stores magnetic bubbles as required information, and 45e is the basis of MIIM21.

To
The basic constants and optimum drive parameter information are automatically written into the test equipment when each MBM 21 undergoes a characteristic test after completion.

In the magnetic bubble memory system configured as described above, first, basic constants and optimum drive parameter information are read from the MBM 21 and written into the MBM 35 and 36, and then the RAM 35.

By reading the information written in 36, 8MO
0PG23, 0DA22 and 8mmM2 with the basic constants and optimum driving conditions required for 9MBM21, which is installed in the magnetic particle printing system to control 32, FTG31.
4 operates, and stable operation of the MIM 21 is guaranteed. Even though MBMs are manufactured using different manufacturing processes,
Since it can be easily driven under the optimal driving conditions according to each, stable operation is guaranteed, handling is extremely simple, and the reliability and cost of the magnetic bubble locking system can be greatly improved.

As described above, according to the present invention, it is possible to easily configure a magnetic bubble memory system that is compatible with magnetic bubble memories manufactured by different manufacturing processes without any adjustment. Further, in manufacturing magnetic bubble memory devices, it is possible to largely tolerate process deviations (punski) and fluctuations due to contact, so the yield of magnetic bubble memory devices can be greatly improved. Sara Kt
In the i-magnetic bubble memory system, each installed magnetic bubble memory device can be driven under the optimal driving conditions, resulting in various excellent effects such as greatly improving the operational reliability of the system. It will be done.

[Brief explanation of drawings]

Figure 1 is a pull-tock circuit diagram showing an example of a conventional magnetic bubble memory system, Figure 2 is a pull-tuck circuit diagram showing an example of a magnetic bubble memory changing system according to the present invention, and Figure #I3 is a magnetic bubble memory device shown in Figure 2. FIG. 3 is an enlarged plan view of the magnetic bubbleme%V element used in FIG. 10...Central processing 31 circuits (OPU), 20...
... Direct peripheral circuit, 21... Magnetic bubble memory device (MBM), 21aφ --- Magnetic no (pull memory element, 22... Rotating magnetic field drive circuit (onB), 2
3...Pulse current drive circuit (OPG), 24...
・Sensean: Qi! Circuit (11M), 30 @...
°Indirect peripheral circuit, 31...Function tie generation circuit (FTG), 32...Magnetic pull memory device control circuit (IMO), 3L34...Read only memory circuit (ROM) ), 35--Random access memory (RAM), 41--Replicate gate, 42--Swap gate, 43a, 4
3b... Generator, 44m. 44b @-...Magnetic bubble detector, 45m, 45b
...Data store loop, 45C...Drive parameter store loop. Figure 1

Claims (1)

[Claims] 1. A plurality of magnetic bubble memo ν devices equipped with at least a magnetic puzzle memory element, a permanent magnet that applies a perpendicular magnetic field to the element, and a drive coil that applies a horizontal rotating magnetic field to the element. A magnetic bubble memo ν system comprising a direct peripheral circuit including a drive circuit and an indirect peripheral circuit including a control circuit for controlling the magnetic bubble memo device. 1. The magnetic bubble memory system according to claim 1, wherein the writing/reading means is provided at a predetermined position in the data storage area of the magnetic bubble memory element. 3. The magnetic papulume sled system according to claim 1 or tia2XJ, characterized in that a Tsunmemuakuryu Sumemo V circuit is used in the indirect peripheral circuit as the writing and reading means.