JPS588564B2 - Glaze Teikou Taino Seizouhouhou - Google Patents
Glaze Teikou Taino SeizouhouhouInfo
- Publication number
- JPS588564B2 JPS588564B2 JP49071177A JP7117774A JPS588564B2 JP S588564 B2 JPS588564 B2 JP S588564B2 JP 49071177 A JP49071177 A JP 49071177A JP 7117774 A JP7117774 A JP 7117774A JP S588564 B2 JPS588564 B2 JP S588564B2
- Authority
- JP
- Japan
- Prior art keywords
- antimony
- glass frit
- oxide
- resistor
- glaze
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
【発明の詳細な説明】
本発明は、アンチモンを含む酸化錫微粉末とガラスフリ
ットからなるグレーズ抵抗体の製造方法に関するもので
あり、その目的とするところは、酸化アンチモンを、ガ
ラスフリットの成分中に添加するかあるいは上記酸化ア
ンチモンをアンチモンを含む酸化錫微粉末とガラスフリ
ットからなるペーストに添加することによりグレーズ抵
抗体の電圧係数を大幅に改良することにある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a glazed resistor made of fine tin oxide powder containing antimony and glass frit, and the object thereof is to incorporate antimony oxide into the components of the glass frit. The purpose of the present invention is to significantly improve the voltage coefficient of a glazed resistor by adding the above-mentioned antimony oxide to a paste consisting of antimony-containing tin oxide fine powder and glass frit.
一般にアンチモンを含む酸化錫を用いたグレーズ抵抗体
は、まず、酸化錫と酸化アンチモンの混合粉末を約１３
００℃の高温中で熱処理することにより、アンチモンを
含む酸化錫の粉末とし、これにガラスフリットを混ぜペ
ースト状にしたものを基板上に塗布し焼付けるが、ある
いはガラスフリット材科と酸化アンチモンと酸化錫とを
混合し、高温中にてガラスフリット材科を溶融したのち
、粉砕し、これをペースト状にしたものを基板上に塗布
し焼付けてグレーズ抵抗体を製造していた。In general, a glaze resistor using tin oxide containing antimony is made by first applying a mixed powder of tin oxide and antimony oxide to about 13
By heat-treating at a high temperature of 00°C, tin oxide powder containing antimony is made, and glass frit is mixed with this to form a paste, which is then applied onto a substrate and baked. Glass frit materials were mixed with tin oxide, melted at high temperatures, crushed, and made into a paste, which was then applied onto a substrate and baked to produce a glazed resistor.
このようにして得られたグレーズ抵抗体の電圧係数は、
使用するガラスフリットの種類により異なるが、通常０
．２％／Ｖ〜０．６％／Ｖであり、バラジウム−銀（Ｐ
ｄ−Ａｇ）系グレーズ抵抗体の電圧係数よりも悪いとい
う欠点があった。The voltage coefficient of the glazed resistor obtained in this way is
It varies depending on the type of glass frit used, but it is usually 0.
．． 2%/V to 0.6%/V, and palladium-silver (P
There was a drawback that the voltage coefficient was worse than that of the d-Ag) type glazed resistor.
本発明は上記欠点を解消し、電圧係数の小さいすぐれた
グレース抵抗体を製造する方法である。The present invention eliminates the above-mentioned drawbacks and provides a method for manufacturing an excellent grace resistor with a small voltage coefficient.
すなわち、アンチモンを含んだ酸化錫粉末とガラスフリ
ットと適当量の酸化アンチモン粉末とを混合し、有機溶
剤を用いて作成したペースト、あるいは、ガラスフリッ
ト用原科に適当量の酸化アンチモンを混ぜ、高温溶融し
たのち急冷し、微粉砕した後、アンチモンを含む酸化錫
微粉末を混合し、有機溶剤を用いて作成したペーストを
、アルミナまたはフオルステライトなどの基板上に印刷
し、焼付けでグレーズ抵抗体とする方法である。In other words, a paste is prepared by mixing antimony-containing tin oxide powder, a glass frit, and an appropriate amount of antimony oxide powder, and using an organic solvent, or a paste is prepared by mixing an appropriate amount of antimony oxide into the base material for glass frit and heating it at high temperature. After melting, rapidly cooling and pulverizing, a paste made using an organic solvent is mixed with fine tin oxide powder containing antimony and printed on a substrate such as alumina or forstellite, and baked to form a glazed resistor. This is the way to do it.
このようにしで製造したグレーズ抵抗体の電圧係数は、
従来の製造方法のものより優れ、またＰｄ−Ａｇグレー
ズ抵抗体の電圧係数よりも小さい値となる。The voltage coefficient of the glazed resistor manufactured in this way is
It is superior to that produced by conventional manufacturing methods, and has a voltage coefficient smaller than that of a Pd-Ag glazed resistor.
以下に本発明の実施例について詳細に説明する。Examples of the present invention will be described in detail below.
先ず第１の実施例としでは１００ｇの塩化第２錫と４．
５ｇの三塩化アンチモンの混合溶液を、水酸化カリウム
で中和しで得られた水酸化錫と水酸化アンチモンとの共
沈物を加熱し、この加熱により得られたアンチモンを含
む酸化第２錫微粉末の導電材料と、酸化バリウム（Ｂａ
Ｏ）、酸化ケイ素（ ＳｉＯ２）、無水ホウ酸（Ｂ２０
３）、酸化アルミニウム（Ａｌ２Ｏ３）を３０：５０：
１０：１０なる割合で含むガラスフリットと、酸化アン
チモン粉末とを、第１表に示した割合で混合し基板上に
印刷し、焼付けでグレーズ抵抗体とした。First, in the first example, 100 g of stannic chloride and 4.
A coprecipitate of tin hydroxide and antimony hydroxide obtained by neutralizing 5 g of a mixed solution of antimony trichloride with potassium hydroxide is heated, and the stannic oxide containing antimony obtained by heating is heated. Fine powder conductive material and barium oxide (Ba
O), silicon oxide (SiO2), boric anhydride (B20
3) Aluminum oxide (Al2O3) 30:50:
Glass frit and antimony oxide powder in a ratio of 10:10 were mixed in the ratio shown in Table 1, printed on a substrate, and baked to form a glazed resistor.
尚、上記グレーズ抵抗体の焼付けは８５０℃でおこない
、電極は、グレーズ抵抗を印刷する前にバラジウム−銀
（Ｐｄ−Ａｇ）を印刷し８５０℃で焼付けで設けた。The glaze resistor was baked at 850°C, and electrodes were formed by printing palladium-silver (Pd-Ag) and baking at 850°C before printing the glaze resistor.
このようにして得たサンプルの電圧係数を測定した結果
は第２表の通りであった。The results of measuring the voltage coefficient of the sample thus obtained are shown in Table 2.
上記第２表から明らかなように酸化アンチモン粉末を加
えることにより、その電圧係数は改善され、酸化アンチ
モンを１．４重量％加えたものでは０．００７％／Ｖと
なった。As is clear from Table 2 above, the voltage coefficient was improved by adding antimony oxide powder, and when 1.4% by weight of antimony oxide was added, it was 0.007%/V.
尚上記実施例では酸化アンチモン（Ｓｂ２Ｏ３）粉末を
ペースト作成時に混合したが、ガラスフリットを作成す
るとき混合しでも同様な効果が得られる。In the above embodiment, antimony oxide (Sb2O3) powder was mixed when making the paste, but the same effect can be obtained by mixing it when making the glass frit.
それを以下に示す第２の実施例で説明する。This will be explained in the second embodiment shown below.
すなわち第２の実施例としでは酸化バリウム（Ｂａｄ）
、酸化ケイ素（ＳｉＯ２）、無水ホウ酸（Ｂ２Ｏ３）、
酸化アルミニウム（Ａｌ２Ｏ３）を３０：５０：１０：
１０（重量％）なる割合で混合した混合物１００に対し
、酸化アンチモン（Ｓｂ２０３）をそれぞれ２０重量％
、４０重量％を混ぜ、１３５０℃で溶融し、急冷したの
ち、微粉砕してガラスフリフトとした。That is, in the second embodiment, barium oxide (Bad)
, silicon oxide (SiO2), boric anhydride (B2O3),
Aluminum oxide (Al2O3) 30:50:10:
Antimony oxide (Sb203) was added in an amount of 20% by weight to 100% of the mixture at a ratio of 10% by weight.
, 40% by weight were mixed, melted at 1350°C, rapidly cooled, and then finely pulverized to obtain a glass flift.
このおのおのガラスフリット３０重量％に対し、第１の
実施例で示したアンチモンを含む酸化錫微粉末７０重量
％を混ぜペースト作成した。A paste was prepared by mixing 30% by weight of each glass frit with 70% by weight of the fine tin oxide powder containing antimony shown in the first example.
これをフオルステライトやアルミナなどから成る基板上
に印刷し、８５０℃で焼付し、パラジウム−銀（Ｐｂ−
Ａｇ）電極を設けて、それぞれの電圧係数を測定した結
果、酸化アンチモンを２０重量％混ぜた場合は０．００
６％／Ｖ，４０重量％混ぜた場合は０．０１０％／Ｖで
あった。This was printed on a substrate made of forsterite or alumina, baked at 850°C, and palladium-silver (Pb-
Ag) As a result of installing electrodes and measuring the voltage coefficient of each, it was 0.00 when 20% by weight of antimony oxide was mixed.
When mixed at 6%/V and 40% by weight, it was 0.010%/V.
以上二実施例についで示したように本発明のグレーズ抵
抗体の製造方法はアンチモンを含む酸化錫とガラスフリ
ットとからなるグレーズ抵抗体において、上記アンチモ
ンを含む酸化錫とガラスフリットとのペースト、あるい
はガラスフリツトを作成する時に、適当量の酸化アンチ
モン（Ｓｂ２０３）を混ぜることを特徴とするものであ
り、本製造方法により得られたグレース抵抗体の電圧係
数は改善され非常に優れた特性となるきわめて効果の大
なるものである。As shown in the above two embodiments, the method for manufacturing a glazed resistor of the present invention is to produce a glazed resistor made of tin oxide containing antimony and glass frit, using a paste of tin oxide containing antimony and glass frit, or This manufacturing method is characterized by mixing an appropriate amount of antimony oxide (Sb203) when creating the glass frit, and the voltage coefficient of the Grace resistor obtained by this manufacturing method is improved, resulting in extremely excellent characteristics. It is a great thing.
Claims (1)
ペーストを基体上に印刷した後、これを焼付けでグレー
ズ抵抗体を製造するに際し、上記ペースト中に、あるい
は上記ガラスフリットの成分中に酸化アンチモンを添加
することを特徴とするグレーズ抵抗体の製造方法。1. After printing a paste consisting of tin oxide and glass frit containing antimony on a substrate and baking it to produce a glazed resistor, antimony oxide is added to the paste or to the components of the glass frit. A method for manufacturing a glazed resistor, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49071177A JPS588564B2 (en) | 1974-06-20 | 1974-06-20 | Glaze Teikou Taino Seizouhouhou |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49071177A JPS588564B2 (en) | 1974-06-20 | 1974-06-20 | Glaze Teikou Taino Seizouhouhou |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51696A JPS51696A (en) | 1976-01-06 |
| JPS588564B2 true JPS588564B2 (en) | 1983-02-16 |
Family
ID=13453108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49071177A Expired JPS588564B2 (en) | 1974-06-20 | 1974-06-20 | Glaze Teikou Taino Seizouhouhou |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS588564B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0628201B2 (en) * | 1988-02-18 | 1994-04-13 | 住友金属鉱山株式会社 | Resistive film forming composition |
| JPH07109808B2 (en) * | 1988-03-30 | 1995-11-22 | 昭栄化学工業株式会社 | Method for producing conductive composite powder and resistance composition using the powder |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4976096A (en) * | 1972-10-27 | 1974-07-23 |
-
1974
- 1974-06-20 JP JP49071177A patent/JPS588564B2/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4976096A (en) * | 1972-10-27 | 1974-07-23 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51696A (en) | 1976-01-06 |
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